AT12755U1 - Verfahren für eine vorübergehende montage eines bausteinwafers auf einem trägersubstrat - Google Patents

Verfahren für eine vorübergehende montage eines bausteinwafers auf einem trägersubstrat Download PDF

Info

Publication number
AT12755U1
AT12755U1 ATGM514/2010U AT5142010U AT12755U1 AT 12755 U1 AT12755 U1 AT 12755U1 AT 5142010 U AT5142010 U AT 5142010U AT 12755 U1 AT12755 U1 AT 12755U1
Authority
AT
Austria
Prior art keywords
wafer
substrate
group
silicon
layer
Prior art date
Application number
ATGM514/2010U
Other languages
German (de)
English (en)
Original Assignee
Brewer Science Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brewer Science Inc filed Critical Brewer Science Inc
Publication of AT12755U1 publication Critical patent/AT12755U1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Micromachines (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Junction Field-Effect Transistors (AREA)
ATGM514/2010U 2008-01-24 2009-01-23 Verfahren für eine vorübergehende montage eines bausteinwafers auf einem trägersubstrat AT12755U1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2337908P 2008-01-24 2008-01-24
ATA9035/2009A AT508318B1 (de) 2008-01-24 2009-01-23 Verfahren für eine vorübergehende montage eines bausteinwafers auf einem trägersubstrat

Publications (1)

Publication Number Publication Date
AT12755U1 true AT12755U1 (de) 2012-11-15

Family

ID=40901639

Family Applications (2)

Application Number Title Priority Date Filing Date
ATGM514/2010U AT12755U1 (de) 2008-01-24 2009-01-23 Verfahren für eine vorübergehende montage eines bausteinwafers auf einem trägersubstrat
ATA9035/2009A AT508318B1 (de) 2008-01-24 2009-01-23 Verfahren für eine vorübergehende montage eines bausteinwafers auf einem trägersubstrat

Family Applications After (1)

Application Number Title Priority Date Filing Date
ATA9035/2009A AT508318B1 (de) 2008-01-24 2009-01-23 Verfahren für eine vorübergehende montage eines bausteinwafers auf einem trägersubstrat

Country Status (13)

Country Link
US (2) US9111981B2 (fr)
EP (1) EP2238618B1 (fr)
JP (2) JP5111620B2 (fr)
KR (1) KR101096142B1 (fr)
CN (1) CN101925996B (fr)
AT (2) AT12755U1 (fr)
CA (1) CA2711266A1 (fr)
DE (2) DE112009000140B4 (fr)
IL (1) IL206872A (fr)
PT (1) PT2238618E (fr)
RU (1) RU2010129076A (fr)
TW (1) TWI439526B (fr)
WO (1) WO2009094558A2 (fr)

Families Citing this family (170)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4746003B2 (ja) * 2007-05-07 2011-08-10 リンテック株式会社 移載装置及び移載方法
US9111981B2 (en) * 2008-01-24 2015-08-18 Brewer Science Inc. Method for reversibly mounting a device wafer to a carrier substrate
US8092628B2 (en) * 2008-10-31 2012-01-10 Brewer Science Inc. Cyclic olefin compositions for temporary wafer bonding
US9721825B2 (en) 2008-12-02 2017-08-01 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
US9991311B2 (en) 2008-12-02 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
US9601530B2 (en) 2008-12-02 2017-03-21 Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
US8476165B2 (en) * 2009-04-01 2013-07-02 Tokyo Electron Limited Method for thinning a bonding wafer
US8950459B2 (en) * 2009-04-16 2015-02-10 Suss Microtec Lithography Gmbh Debonding temporarily bonded semiconductor wafers
KR20120027237A (ko) 2009-04-16 2012-03-21 수스 마이크로텍 리소그라피 게엠바하 웨이퍼 가접합 및 분리를 위한 개선된 장치
US8366873B2 (en) 2010-04-15 2013-02-05 Suss Microtec Lithography, Gmbh Debonding equipment and methods for debonding temporary bonded wafers
US8871609B2 (en) * 2009-06-30 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. Thin wafer handling structure and method
US9305769B2 (en) 2009-06-30 2016-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. Thin wafer handling method
EP2706562A3 (fr) * 2009-09-01 2014-09-03 EV Group GmbH Dispositif et procédé de séparation d'un substrat de produit et d'un substrat de support par penchement d'un cadre avec un film
DE102009050568A1 (de) * 2009-10-23 2011-04-28 Schott Ag Einrichtung mit verminderten Reibeigenschaften
KR101105918B1 (ko) * 2009-11-30 2012-01-17 주식회사 엘지실트론 질화물 반도체 소자의 제조방법
TWI412096B (zh) * 2009-12-15 2013-10-11 Hiwin Tech Corp 晶圓防護裝置及其操作流程
JP5535670B2 (ja) * 2010-01-28 2014-07-02 富士フイルム株式会社 放射線画像検出器の製造方法
US9159595B2 (en) * 2010-02-09 2015-10-13 Suss Microtec Lithography Gmbh Thin wafer carrier
JP2013520009A (ja) 2010-02-12 2013-05-30 ダウ コーニング コーポレーション 半導体加工のための一時的ウェハー接着方法
US8541886B2 (en) * 2010-03-09 2013-09-24 Stats Chippac Ltd. Integrated circuit packaging system with via and method of manufacture thereof
KR20160075845A (ko) * 2010-03-31 2016-06-29 에베 그룹 에. 탈너 게엠베하 양면에 칩이 장착되는 웨이퍼를 제작하기 위한 방법
JP5728163B2 (ja) * 2010-04-02 2015-06-03 東京応化工業株式会社 剥離方法、および剥離液
US9837295B2 (en) 2010-04-15 2017-12-05 Suss Microtec Lithography Gmbh Apparatus and method for semiconductor wafer leveling, force balancing and contact sensing
US9064686B2 (en) 2010-04-15 2015-06-23 Suss Microtec Lithography, Gmbh Method and apparatus for temporary bonding of ultra thin wafers
US9859141B2 (en) 2010-04-15 2018-01-02 Suss Microtec Lithography Gmbh Apparatus and method for aligning and centering wafers
JP6116476B2 (ja) * 2010-05-20 2017-04-19 エーファウ・グループ・エー・タルナー・ゲーエムベーハー チップスタックを製造するための方法及びその方法を実施するためのキャリア
US8742009B2 (en) * 2010-06-04 2014-06-03 Shin-Etsu Chemical Co., Ltd. Temporary adhesive composition, and method of producing thin wafer
JP5671265B2 (ja) * 2010-06-10 2015-02-18 東京応化工業株式会社 基板の加工方法
US8852391B2 (en) 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
CN102315311A (zh) * 2010-07-06 2012-01-11 杜邦太阳能有限公司 太阳能模块装置及其封边涂布方法
US9263314B2 (en) 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
KR101735571B1 (ko) 2010-08-20 2017-05-16 삼성전자주식회사 방열 재료, 상기 방열 재료로 만들어진 접합부를 포함하는 발광 다이오드 패키지
JP5714859B2 (ja) * 2010-09-30 2015-05-07 芝浦メカトロニクス株式会社 基板積層体、貼り合わせ装置、剥離装置、および基板の製造方法
KR20160021301A (ko) 2010-11-12 2016-02-24 에베 그룹 에. 탈너 게엠베하 웨이퍼 스택에 있는 결함 및 층 두께를 측정하기 위한 측정 장치 및 측정 방법
US8415183B2 (en) * 2010-11-22 2013-04-09 Tsmc Solid State Lighting Ltd. Wafer level conformal coating for LED devices
US8753460B2 (en) * 2011-01-28 2014-06-17 International Business Machines Corporation Reduction of edge chipping during wafer handling
CN102637575B (zh) * 2011-02-09 2015-07-01 群康科技(深圳)有限公司 元件基板的制造方法
WO2012112937A2 (fr) 2011-02-18 2012-08-23 Applied Materials, Inc. Procédé et appareil permettant une séparation au niveau tranche
CN103460369B (zh) 2011-04-11 2016-12-28 Ev 集团 E·索尔纳有限责任公司 柔性的承载支架、用于使承载基底脱离的装置以及方法
SG194935A1 (en) 2011-06-06 2013-12-30 Ev Group E Thallner Gmbh Method and device for determining the pressure distribution for bonding
WO2013006865A2 (fr) 2011-07-07 2013-01-10 Brewer Science Inc. Procédés de transfert de tranches ou couches de dispositif entre des substrats de support et d'autres surfaces
RU2469433C1 (ru) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
DE102011079687A1 (de) 2011-07-22 2013-01-24 Wacker Chemie Ag Temporäre Verklebung von chemisch ähnlichen Substraten
JP2013026546A (ja) * 2011-07-25 2013-02-04 Dainippon Printing Co Ltd 薄膜デバイス用基板、及び薄膜デバイスの製造方法
US8940104B2 (en) 2011-08-02 2015-01-27 Brewer Science Inc. Cleaning composition for temporary wafer bonding materials
WO2013036638A2 (fr) * 2011-09-06 2013-03-14 Brewer Science Inc. Utilisation d'une énergie mégasonique pour faciliter le décollement des bords dans un procédé de collage temporaire zonal
JP5933724B2 (ja) * 2011-09-20 2016-06-15 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 支持ウェハを被覆する装置及び方法
JP5962395B2 (ja) * 2011-09-28 2016-08-03 Jsr株式会社 基材の仮固定方法、半導体装置および仮固定用組成物
JP5913053B2 (ja) * 2011-12-08 2016-04-27 東京エレクトロン株式会社 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
EP2795669B1 (fr) 2011-12-22 2020-06-17 EV Group E. Thallner GmbH Support de substrat flexible, dispositif et procédé permettant de détacher un premier substrat
US8696864B2 (en) 2012-01-26 2014-04-15 Promerus, Llc Room temperature debonding composition, method and stack
WO2013119976A1 (fr) * 2012-02-08 2013-08-15 Brewer Science Inc. Compositions de revêtement à base de silane fluoré servant à coller et à manipuler une tranche fine
US10543662B2 (en) 2012-02-08 2020-01-28 Corning Incorporated Device modified substrate article and methods for making
US8975157B2 (en) 2012-02-08 2015-03-10 Advanced Semiconductor Engineering, Inc. Carrier bonding and detaching processes for a semiconductor wafer
JP6055597B2 (ja) * 2012-02-09 2016-12-27 東京応化工業株式会社 貼付方法及び貼付装置
US8697542B2 (en) 2012-04-12 2014-04-15 The Research Foundation Of State University Of New York Method for thin die-to-wafer bonding
JP5348341B1 (ja) * 2012-04-27 2013-11-20 Ｊｓｒ株式会社 基材の処理方法、仮固定用組成物および半導体装置
US9127126B2 (en) 2012-04-30 2015-09-08 Brewer Science Inc. Development of high-viscosity bonding layer through in-situ polymer chain extension
JP5360260B2 (ja) * 2012-05-08 2013-12-04 Ｊｓｒ株式会社 基材の処理方法、積層体および半導体装置
JP5901422B2 (ja) 2012-05-15 2016-04-13 古河電気工業株式会社 半導体ウェハのダイシング方法およびこれに用いる半導体加工用ダイシングテープ
JP6063641B2 (ja) * 2012-05-16 2017-01-18 株式会社ディスコ ウエーハ保護部材
JP5752639B2 (ja) * 2012-05-28 2015-07-22 東京エレクトロン株式会社 接合システム、接合方法、プログラム及びコンピュータ記憶媒体
CN103035580B (zh) * 2012-07-24 2015-06-03 上海华虹宏力半导体制造有限公司 应用于薄硅片的临时键合和解离工艺方法
SG2014014716A (en) 2012-07-30 2014-08-28 Erich Thallner Substrate composite, method and device for bonding of substrates
KR101970291B1 (ko) 2012-08-03 2019-04-18 삼성전자주식회사 반도체 패키지의 제조 방법
US8963336B2 (en) 2012-08-03 2015-02-24 Samsung Electronics Co., Ltd. Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same
KR101276487B1 (ko) * 2012-10-05 2013-06-18 주식회사 이녹스 웨이퍼 적층체 및 디바이스 웨이퍼 및 캐리어 웨이퍼의 본딩 및 디본딩 처리 방법
US20140103499A1 (en) * 2012-10-11 2014-04-17 International Business Machines Corporation Advanced handler wafer bonding and debonding
US9269623B2 (en) 2012-10-25 2016-02-23 Rohm And Haas Electronic Materials Llc Ephemeral bonding
US20140117509A1 (en) * 2012-10-26 2014-05-01 Infineon Technologies Ag Metal Deposition with Reduced Stress
DE102012220954A1 (de) 2012-11-16 2014-05-22 Wacker Chemie Ag Schleifbare Siliconelastomerzusammensetzung und deren Verwendung
KR20150095822A (ko) * 2012-12-13 2015-08-21 코닝 인코포레이티드 유리 및 유리 물품의 제조 방법
US9340443B2 (en) 2012-12-13 2016-05-17 Corning Incorporated Bulk annealing of glass sheets
US10014177B2 (en) 2012-12-13 2018-07-03 Corning Incorporated Methods for processing electronic devices
US10086584B2 (en) 2012-12-13 2018-10-02 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
TWI617437B (zh) * 2012-12-13 2018-03-11 康寧公司 促進控制薄片與載體間接合之處理
EP2747130B1 (fr) 2012-12-21 2017-10-11 ams AG Procédé de production d'une connexion de plaquette amovible et assemblage d'une plaquette et d'un support
JP6170672B2 (ja) * 2012-12-27 2017-07-26 富士フイルム株式会社 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法
EP2752871B1 (fr) * 2013-01-08 2015-09-16 ams AG Procédé d'application d'un support sur une tranche de dispositif
JP6162976B2 (ja) * 2013-02-26 2017-07-12 東京応化工業株式会社 基板の処理方法
EP2772939B1 (fr) 2013-03-01 2016-10-19 Ams Ag Dispositif à semi-conducteur pour la détection de radiation et procédé de production d'un tel dispositif
US10000675B2 (en) * 2013-03-03 2018-06-19 John Cleaon Moore Temporary adhesive with tunable adhesion force sufficient for processing thin solid materials
US9028628B2 (en) 2013-03-14 2015-05-12 International Business Machines Corporation Wafer-to-wafer oxide fusion bonding
JP5610328B1 (ja) * 2013-03-14 2014-10-22 富士電機株式会社 半導体デバイスの製造方法
US9093489B2 (en) * 2013-03-15 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Selective curing method of adhesive on substrate
CN105658594B (zh) * 2013-03-15 2019-01-04 康宁股份有限公司 玻璃片的整体退火
JP5921473B2 (ja) * 2013-03-21 2016-05-24 株式会社東芝 半導体装置の製造方法
JP6114596B2 (ja) 2013-03-26 2017-04-12 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
JP5975918B2 (ja) 2013-03-27 2016-08-23 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
JP6050170B2 (ja) 2013-03-27 2016-12-21 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
CN104103731A (zh) * 2013-04-03 2014-10-15 新世纪光电股份有限公司 发光二极管结构及其制作方法
CN103259069B (zh) * 2013-04-12 2015-06-24 上海安费诺永亿通讯电子有限公司 一种改进损耗的传输线
CN103259070B (zh) * 2013-04-12 2016-08-03 上海安费诺永亿通讯电子有限公司 一种降低损耗的传输线
CN103280423A (zh) * 2013-05-29 2013-09-04 华进半导体封装先导技术研发中心有限公司 一种机械式拆键合工艺及系统
US9058974B2 (en) 2013-06-03 2015-06-16 International Business Machines Corporation Distorting donor wafer to corresponding distortion of host wafer
KR101617316B1 (ko) 2013-08-14 2016-05-02 코스텍시스템(주) 디바이스 웨이퍼와 캐리어 웨이퍼의 본딩/디본딩 방법 및 본딩/디본딩 장치
CN103441083B (zh) * 2013-06-27 2016-03-30 清华大学 一种用于三维集成的临时键合方法
US9508659B2 (en) 2013-07-01 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus to protect a wafer edge
KR20150011072A (ko) 2013-07-22 2015-01-30 삼성전자주식회사 임시 접착제 조성물 및 이를 이용한 반도체 소자의 제조 방법
CN103367221A (zh) * 2013-07-23 2013-10-23 华进半导体封装先导技术研发中心有限公司 一种晶圆拆键合工艺及系统
US8962449B1 (en) 2013-07-30 2015-02-24 Micron Technology, Inc. Methods for processing semiconductor devices
US10103048B2 (en) 2013-08-28 2018-10-16 Brewer Science, Inc. Dual-layer bonding material process for temporary bonding of microelectronic substrates to carrier substrates
JP6182491B2 (ja) 2013-08-30 2017-08-16 富士フイルム株式会社 積層体およびその応用
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
CN103633004B (zh) * 2013-11-20 2016-05-25 中国电子科技集团公司第四十一研究所 30μm-50μm超薄石英基片上光刻刻蚀薄膜电路图形的方法
JP5607847B1 (ja) 2013-11-29 2014-10-15 古河電気工業株式会社 半導体加工用粘着テープ
US9224696B2 (en) 2013-12-03 2015-12-29 United Microelectronics Corporation Integrated semiconductor device and method for fabricating the same
FR3015110B1 (fr) * 2013-12-17 2017-03-24 Commissariat Energie Atomique Procede de fabrication d’un substrat-poignee destine au collage temporaire d’un substrat
US9761474B2 (en) 2013-12-19 2017-09-12 Micron Technology, Inc. Methods for processing semiconductor devices
JP6687523B2 (ja) * 2014-01-07 2020-04-22 ブルーワー サイエンス アイ エヌ シー． ウェーハの一時接着処理に使用する環状オレフィンポリマー組成物およびポリシロキサン離型層
US9865490B2 (en) 2014-01-07 2018-01-09 Brewer Science Inc. Cyclic olefin polymer compositions and polysiloxane release layers for use in temporary wafer bonding processes
WO2015175353A1 (fr) * 2014-05-13 2015-11-19 Arizona Board Of Regents, For And On Behalf Of Arizona State University Procédé permettant d'obtenir un dispositif électronique et dispositif électronique correspondant
US10381224B2 (en) 2014-01-23 2019-08-13 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
WO2015156891A2 (fr) 2014-01-23 2015-10-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Procédé de fabrication d'un dispositif à semi-conducteur souple et dispositif à semi-conducteur souple associé
WO2017034645A2 (fr) 2015-06-09 2017-03-02 ARIZONA BOARD OF REGENTS, a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY Procédé permettant d'obtenir un dispositif électronique et dispositif électronique correspondant
TW201530610A (zh) * 2014-01-27 2015-08-01 Dow Corning 暫時性接合晶圓系統及其製造方法
CN106132688B (zh) * 2014-01-27 2020-07-14 康宁股份有限公司 用于薄片与载体的受控粘结的制品和方法
EP2899760B1 (fr) 2014-01-27 2018-08-29 ams AG Dispositif à semi-conducteur pour applications optiques et procédé de production d'un tel dispositif semi-conducteur
CN103839862A (zh) * 2014-02-28 2014-06-04 华进半导体封装先导技术研发中心有限公司 一种机械式拆键合工艺方法
CN105684131B (zh) 2014-03-03 2018-09-25 古河电气工业株式会社 半导体加工用粘合带
JP6151204B2 (ja) * 2014-03-04 2017-06-21 東京エレクトロン株式会社 接合方法および接合システム
EP3129221A1 (fr) 2014-04-09 2017-02-15 Corning Incorporated Article de substrat modifié de dispositif et procédés de fabrication
CN103956327A (zh) * 2014-04-28 2014-07-30 华进半导体封装先导技术研发中心有限公司 一种激光拆键合工艺方法及系统
JP6385133B2 (ja) * 2014-05-16 2018-09-05 株式会社ディスコ ウェーハの加工方法及び中間部材
JP6344971B2 (ja) * 2014-05-16 2018-06-20 株式会社ディスコ サポートプレート、サポートプレートの形成方法及びウェーハの加工方法
SG11201700478YA (en) 2014-07-22 2017-02-27 Brewer Science Inc Polyimides as laser release materials for 3-d ic applications
CN105336682A (zh) * 2014-08-06 2016-02-17 上海和辉光电有限公司 一种柔性基板的制作方法、固定方法以及固定结构
US10978334B2 (en) * 2014-09-02 2021-04-13 Applied Materials, Inc. Sealing structure for workpiece to substrate bonding in a processing chamber
US10141216B2 (en) 2014-10-22 2018-11-27 Promerus, Llc Room temperature debondable and thermally curable compositions
US10446582B2 (en) 2014-12-22 2019-10-15 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an imaging system and imaging system thereof
US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
JP6225894B2 (ja) * 2014-12-24 2017-11-08 信越化学工業株式会社 ウエハの仮接着方法及び薄型ウエハの製造方法
SG11201704977WA (en) * 2015-01-14 2017-07-28 Ev Group E Thallner Gmbh Method and device for detaching a substrate from a substrate stack
DE102015100863B4 (de) 2015-01-21 2022-03-03 Infineon Technologies Ag Verfahren zur Handhabung eines Produktsubstrats und ein verklebtes Substratsystem
EP3253617A1 (fr) * 2015-02-06 2017-12-13 Adient Luxembourg Holding S.à r.l. Procédé de liaison de composants d'un siège de véhicule et siège de véhicule
JP2016146429A (ja) * 2015-02-09 2016-08-12 トヨタ自動車株式会社 半導体装置の製造方法
US9644118B2 (en) 2015-03-03 2017-05-09 Dow Global Technologies Llc Method of releasably attaching a semiconductor substrate to a carrier
US10522383B2 (en) 2015-03-25 2019-12-31 International Business Machines Corporation Thermoplastic temporary adhesive for silicon handler with infra-red laser wafer de-bonding
CN107635769B (zh) 2015-05-19 2020-09-15 康宁股份有限公司 使片材与载体粘结的制品和方法
DE102015210384A1 (de) 2015-06-05 2016-12-08 Soitec Verfahren zur mechanischen Trennung für eine Doppelschichtübertragung
CN104916550A (zh) * 2015-06-09 2015-09-16 深圳市华星光电技术有限公司 用于制造柔性基板的方法以及基板结构
US9799625B2 (en) * 2015-06-12 2017-10-24 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
CN117534339A (zh) 2015-06-26 2024-02-09 康宁股份有限公司 包含板材和载体的方法和制品
CN105280541A (zh) * 2015-09-16 2016-01-27 中国电子科技集团公司第五十五研究所 一种用于超薄半导体圆片的临时键合方法及去键合方法
RU2612879C1 (ru) * 2015-10-15 2017-03-13 Акционерное общество "Концерн радиостроения "Вега" Способ временного закрепления подложек на технологическом основании
DE102015118742A1 (de) 2015-11-02 2017-05-04 Ev Group E. Thallner Gmbh Verfahren zum Bonden und Lösen von Substraten
US10050012B2 (en) * 2015-11-25 2018-08-14 International Business Machines Corporation Method for semiconductor die removal rework
DE102016106351A1 (de) * 2016-04-07 2017-10-12 Ev Group E. Thallner Gmbh Verfahren und Vorrichtung zum Bonden zweier Substrate
TW202216444A (zh) 2016-08-30 2022-05-01 美商康寧公司 用於片材接合的矽氧烷電漿聚合物
TWI810161B (zh) 2016-08-31 2023-08-01 美商康寧公司 具以可控制式黏結的薄片之製品及製作其之方法
US20180068843A1 (en) * 2016-09-07 2018-03-08 Raytheon Company Wafer stacking to form a multi-wafer-bonded structure
CN106847718A (zh) * 2017-03-28 2017-06-13 深圳市化讯半导体材料有限公司 一种器件晶圆的临时键合与拆键合工艺
US10403598B2 (en) 2017-08-11 2019-09-03 Micron Technology, Inc. Methods and system for processing semiconductor device structures
JP7260523B2 (ja) 2017-08-18 2023-04-18 コーニング インコーポレイテッド ポリカチオン性高分子を使用した一時的結合
US10326044B2 (en) * 2017-08-18 2019-06-18 Micron Technology, Inc. Method and apparatus for processing semiconductor device structures
US10300649B2 (en) 2017-08-29 2019-05-28 Raytheon Company Enhancing die flatness
US11534868B2 (en) 2017-09-12 2022-12-27 Ev Group E. Thallner Gmbh Device and method for separating a temporarily bonded substrate stack
CN111615567B (zh) 2017-12-15 2023-04-14 康宁股份有限公司 用于处理基板的方法和用于制备包括粘合片材的制品的方法
SG11202005465SA (en) 2017-12-22 2020-07-29 Brewer Science Inc Laser-releasable bonding materials for 3-d ic applications
US10446431B2 (en) * 2017-12-27 2019-10-15 Micron Technology, Inc. Temporary carrier debond initiation, and associated systems and methods
EP3806157A4 (fr) * 2018-05-31 2022-07-06 Institute of Flexible Electronics Technology of Thu, Zhejiang Dispositif de transition pour dispositif flexible et son procédé de préparation, et procédé de fabrication pour dispositif flexible
CN112913000A (zh) * 2018-10-18 2021-06-04 朗姆研究公司 用于斜面蚀刻器的下等离子体排除区域环
US11024501B2 (en) * 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
JP7453238B2 (ja) 2019-01-22 2024-03-19 ブルーワー サイエンス アイ エヌ シー． ３－ｄ ｉｃ用途用レーザー離型性接着材料
US10847569B2 (en) 2019-02-26 2020-11-24 Raytheon Company Wafer level shim processing
FR3103313B1 (fr) * 2019-11-14 2021-11-12 Commissariat Energie Atomique Procédé de démontage d’un empilement d’au moins trois substrats
DE102022000425A1 (de) 2022-02-03 2023-08-03 Azur Space Solar Power Gmbh III-N-Silizium Halbleiterscheibe
WO2023179868A1 (fr) 2022-03-25 2023-09-28 Ev Group E. Thallner Gmbh Procédé et système à substrat pour séparer des substrats de support
JP2024085189A (ja) * 2022-12-14 2024-06-26 タツモ株式会社 半導体デバイスの製造方法
CN117219502B (zh) * 2023-11-07 2024-01-12 天通控股股份有限公司 一种键合晶片的单面减薄方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020061642A1 (en) * 1999-09-02 2002-05-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
EP1496547A2 (fr) * 2003-07-11 2005-01-12 Nitto Denko Corporation Feuille stratifiée pour meulage de la face arrière d'une plaquette de semi-conducteur
US20050221598A1 (en) * 2004-03-31 2005-10-06 Daoqiang Lu Wafer support and release in wafer processing
WO2005101459A2 (fr) * 2004-04-15 2005-10-27 Infineon Technologies Ag Procede d'usinage d'une piece sur un porte-piece
US20070145602A1 (en) * 2005-12-22 2007-06-28 Princo Corp. Structure Combining an IC Integrated Substrate and a Carrier, and Method of Manufacturing such Structure
AT503053A2 (de) * 2006-01-03 2007-07-15 Erich Thallner Kombination aus einem träger und einem wafer

Family Cites Families (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970494A (en) * 1975-04-18 1976-07-20 Western Electric Co., Inc. Method for adhering one surface to another
US4474942A (en) * 1982-06-28 1984-10-02 Takeda Chemical Industries, Ltd. Cross-linked polyesteramide from bis(2-oxazoline)
GB8320270D0 (en) 1983-07-27 1983-09-01 Raychem Ltd Polymer composition
JPS61144839A (ja) * 1984-12-18 1986-07-02 Toshiba Corp 半導体ウエハの接着方法
US4558114A (en) * 1985-01-23 1985-12-10 Ashland Oil, Inc. Polymers derived from polyisocyanates, bicyclic amide acetals and oxazolines
US4710542A (en) * 1986-05-16 1987-12-01 American Cyanamid Company Alkylcarbamylmethylated amino-triazine crosslinking agents and curable compositions containing the same
US4855170A (en) * 1986-08-21 1989-08-08 Minnesota Mining And Manufacturing Company Pressure-sensitive tape construction incorporating resilient polymeric microspheres
JPH0266933A (ja) * 1988-09-01 1990-03-07 Fujitsu Ltd 半導体装置の製造方法
NL8902683A (nl) 1989-10-31 1991-05-16 Stamicarbon Meerkomponentensysteem op basis van een oxazoline en een fosfor bevattende verbinding.
US5043250A (en) * 1990-07-17 1991-08-27 Eastman Kodak Company Radiation-sensitive composition containing a poly (N-acyl-alkyleneimine) and use thereof in lithographic printing plates
US5195729A (en) * 1991-05-17 1993-03-23 National Semiconductor Corporation Wafer carrier
JPH0645436A (ja) 1992-07-22 1994-02-18 Nec Corp 半導体基板の貼付方法
JP3656254B2 (ja) 1994-02-28 2005-06-08 三菱住友シリコン株式会社 接着ウエーハの剥離方法及び剥離装置
US5654226A (en) * 1994-09-07 1997-08-05 Harris Corporation Wafer bonding for power devices
JP2004119975A (ja) * 1995-12-04 2004-04-15 Renesas Technology Corp Ｉｃカードの製造方法
US6342434B1 (en) * 1995-12-04 2002-01-29 Hitachi, Ltd. Methods of processing semiconductor wafer, and producing IC card, and carrier
JPH09263500A (ja) * 1996-01-22 1997-10-07 Komatsu Electron Metals Co Ltd 貼り合わせｓｏｉウェーハの剥がし治具
DE19628393A1 (de) 1996-07-13 1998-01-15 Bosch Gmbh Robert Vorrichtung zum Schutz des Rands eines Wafers vor einer ätzenden Flüssigkeit und Verfahren zur Montage der Vorrichtung
US6054363A (en) * 1996-11-15 2000-04-25 Canon Kabushiki Kaisha Method of manufacturing semiconductor article
CA2225131C (fr) 1996-12-18 2002-01-01 Canon Kabushiki Kaisha Procede de production d'articles semi-conducteurs
WO1998033861A1 (fr) * 1997-01-30 1998-08-06 Mitsui Chemicals, Inc. Compositions adhesives thermofusibles
JP2001514449A (ja) * 1997-08-22 2001-09-11 キュービック・メモリー・インコーポレーテッド 熱伝導性エポキシプリフォームによるシリコンセグメントの垂直相互接続方法
US6110999A (en) * 1998-03-06 2000-08-29 Denovus Llc Reusable adhesive composition and method of making the same
KR100304197B1 (ko) * 1998-03-30 2001-11-30 윤종용 소이제조방법
US6068727A (en) * 1998-05-13 2000-05-30 Lsi Logic Corporation Apparatus and method for separating a stiffener member from a flip chip integrated circuit package substrate
KR100509059B1 (ko) * 1998-09-12 2005-11-22 엘지전자 주식회사 플렉시블인쇄회로기판의제조방법및그방법으로생산한플렉시블인쇄회로기판
FR2783970B1 (fr) 1998-09-25 2000-11-03 Commissariat Energie Atomique Dispositif autorisant le traitement d'un substrat dans une machine prevue pour traiter de plus grands substrats et systeme de montage d'un substrat dans ce dispositif
FR2785217B1 (fr) * 1998-10-30 2001-01-19 Soitec Silicon On Insulator Procede et dispositif pour separer en deux tranches une plaque de materiau notamment semi-conducteur
JP2000138193A (ja) * 1998-11-02 2000-05-16 Enya System:Kk マウント板への堆積物の付着防止方法
IL143467A (en) * 1998-12-02 2005-05-17 Newport Corp Specimen holding robotic arm and effector
JP2000208252A (ja) 1999-01-14 2000-07-28 Tdk Corp 有機ｅｌ素子
FR2796491B1 (fr) * 1999-07-12 2001-08-31 Commissariat Energie Atomique Procede de decollement de deux elements et dispositif pour sa mise en oeuvre
WO2001079304A1 (fr) * 2000-04-13 2001-10-25 Idemitsu Petrochemical Co., Ltd. Procede de production de copolymere de vinyle $g(a)-olefinique/aromatique
US20030168158A1 (en) * 2000-08-22 2003-09-11 Takeyoshi Kato Method of film laminating
JP2002237516A (ja) 2001-02-07 2002-08-23 Seiko Epson Corp ウェハ保護ケース
US20020115263A1 (en) * 2001-02-16 2002-08-22 Worth Thomas Michael Method and related apparatus of processing a substrate
US6660330B2 (en) * 2001-04-10 2003-12-09 International Business Machines Corporation Method for depositing metal films onto substrate surfaces utilizing a chamfered ring support
FR2823596B1 (fr) 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
DE10121115A1 (de) * 2001-04-28 2002-10-31 Leica Microsystems Haltevorrichtung für Wafer
US6811916B2 (en) * 2001-05-15 2004-11-02 Neah Power Systems, Inc. Fuel cell electrode pair assemblies and related methods
US6543808B1 (en) * 2001-07-05 2003-04-08 Translucent Technologies, Llc Direct thermal printable pull tabs
DE10137375A1 (de) * 2001-07-31 2003-02-27 Infineon Technologies Ag Verwendung von Polybenzoxazolen (PBO) zum Kleben
EP1295926A1 (fr) * 2001-09-19 2003-03-26 ExxonMobil Chemical Patents Inc. Composants pour des compositions adhésives et procédé pour leur préparation
JP3957506B2 (ja) * 2001-12-26 2007-08-15 Ｎｅｃエレクトロニクス株式会社 基板表面保護シート貼り付け装置および貼り付け方法
WO2003095579A1 (fr) * 2002-05-13 2003-11-20 Jsr Corporation Composition et procede pour la fixation termporaire de solides
KR100577627B1 (ko) * 2002-05-20 2006-05-10 주식회사 사무코 접합기판과 그 제조방법 및 그것에 사용되는 웨이퍼 외주가압용 지그류
JP4565804B2 (ja) 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
JP4074794B2 (ja) 2002-08-30 2008-04-09 ソタジャパン有限会社 ゲルマニウム合金−シリカ複合体を用いた装身具
US7608336B2 (en) * 2002-11-28 2009-10-27 Nippon Kayaku Kabushiki Kaisha Flame-retardant epoxy resin composition and cured product obtained therefrom
JP4593068B2 (ja) 2002-11-29 2010-12-08 古河電気工業株式会社 半導体ウエハー固定用粘着テープ
US7187162B2 (en) * 2002-12-16 2007-03-06 S.O.I.Tec Silicon On Insulator Technologies S.A. Tools and methods for disuniting semiconductor wafers
US6869894B2 (en) * 2002-12-20 2005-03-22 General Chemical Corporation Spin-on adhesive for temporary wafer coating and mounting to support wafer thinning and backside processing
JP4514409B2 (ja) * 2003-02-20 2010-07-28 日東電工株式会社 半導体ウエハの仮固定方法及び電子部品、回路基板
JP4171898B2 (ja) * 2003-04-25 2008-10-29 信越化学工業株式会社 ダイシング・ダイボンド用接着テープ
DE10320375B3 (de) * 2003-05-07 2004-12-16 Süss Micro Tec Laboratory Equipment GmbH Verfahren zum temporären Fixieren zweier flächiger Werksücke
CN100352031C (zh) * 2003-05-13 2007-11-28 三益半导体工业株式会社 晶片分离方法、晶片分离装置及晶片分离转移机
US6911375B2 (en) * 2003-06-02 2005-06-28 International Business Machines Corporation Method of fabricating silicon devices on sapphire with wafer bonding at low temperature
DE10334576B4 (de) * 2003-07-28 2007-04-05 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleiterbauelements mit einem Kunststoffgehäuse
JP4462997B2 (ja) * 2003-09-26 2010-05-12 株式会社ディスコ ウェーハの加工方法
JP4447280B2 (ja) * 2003-10-16 2010-04-07 リンテック株式会社 表面保護用シートおよび半導体ウエハの研削方法
US7084201B2 (en) * 2003-11-14 2006-08-01 Wall-Guard Corporation Of Ohio Non-flammable waterproofing composition
CN1886480A (zh) 2003-11-27 2006-12-27 捷时雅株式会社 热熔型粘合剂组合物
JP2006135272A (ja) * 2003-12-01 2006-05-25 Tokyo Ohka Kogyo Co Ltd 基板のサポートプレート及びサポートプレートの剥離方法
US20050150597A1 (en) * 2004-01-09 2005-07-14 Silicon Genesis Corporation Apparatus and method for controlled cleaving
US7279063B2 (en) * 2004-01-16 2007-10-09 Eastman Kodak Company Method of making an OLED display device with enhanced optical and mechanical properties
RU2273075C2 (ru) 2004-01-28 2006-03-27 Открытое акционерное общество "Научно-исследовательский институт полупроводникового машиностроения" (ОАО "НИИПМ") Устройство для обработки полупроводниковых пластин
KR100696287B1 (ko) * 2004-01-28 2007-03-19 미쓰이 가가쿠 가부시키가이샤 반도체 웨이퍼의 보호방법
DE102004007060B3 (de) * 2004-02-13 2005-07-07 Thallner, Erich, Dipl.-Ing. Vorrichtung und Verfahren zum Verbinden von Wafern
FR2866983B1 (fr) * 2004-03-01 2006-05-26 Soitec Silicon On Insulator Realisation d'une entite en materiau semiconducteur sur substrat
JP2005268690A (ja) * 2004-03-22 2005-09-29 Sumitomo Bakelite Co Ltd 多層回路基板の製造方法
US20060046433A1 (en) 2004-08-25 2006-03-02 Sterrett Terry L Thinning semiconductor wafers
JP4539368B2 (ja) * 2005-02-24 2010-09-08 ソニー株式会社 表示装置の製造方法
KR101278460B1 (ko) 2005-03-01 2013-07-02 다우 코닝 코포레이션 반도체 가공을 위한 임시 웨이퍼 접착방법
JP4721828B2 (ja) * 2005-08-31 2011-07-13 東京応化工業株式会社 サポートプレートの剥離方法
US8268449B2 (en) * 2006-02-06 2012-09-18 Brewer Science Inc. Thermal- and chemical-resistant acid protection coating material and spin-on thermoplastic adhesive
JP4682883B2 (ja) 2006-03-10 2011-05-11 株式会社豊田自動織機 貼り合わせ基板の分断方法
US20070267972A1 (en) * 2006-05-22 2007-11-22 Menegus Harry E Method for forming a temporary hermetic seal for an OLED display device
US20070274871A1 (en) * 2006-05-23 2007-11-29 Genetix Limited Well plate
CN101356047B (zh) 2006-07-06 2011-11-09 Rena有限责任公司 用于分开和输送基片的装置和方法
JP2008021929A (ja) 2006-07-14 2008-01-31 Tokyo Ohka Kogyo Co Ltd サポートプレート、搬送装置、剥離装置及び剥離方法
US7713835B2 (en) * 2006-10-06 2010-05-11 Brewer Science Inc. Thermally decomposable spin-on bonding compositions for temporary wafer bonding
US20080200011A1 (en) * 2006-10-06 2008-08-21 Pillalamarri Sunil K High-temperature, spin-on, bonding compositions for temporary wafer bonding using sliding approach
JP2008171934A (ja) 2007-01-10 2008-07-24 Lintec Corp 脆質部材の保護構造および脆質部材の処理方法
CN101379606B (zh) 2007-01-31 2012-04-18 信越工程株式会社 粘接卡盘装置
JP4729003B2 (ja) * 2007-06-08 2011-07-20 リンテック株式会社 脆質部材の処理方法
EP2298843A1 (fr) * 2007-10-19 2011-03-23 Nitto Europe N.V Bande adhésive
JP2009154407A (ja) * 2007-12-27 2009-07-16 Tdk Corp 剥離装置、剥離方法および情報記録媒体製造方法
US9111981B2 (en) 2008-01-24 2015-08-18 Brewer Science Inc. Method for reversibly mounting a device wafer to a carrier substrate
JP2010010207A (ja) * 2008-06-24 2010-01-14 Tokyo Ohka Kogyo Co Ltd 剥離装置および剥離方法
US8852391B2 (en) * 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020061642A1 (en) * 1999-09-02 2002-05-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
EP1496547A2 (fr) * 2003-07-11 2005-01-12 Nitto Denko Corporation Feuille stratifiée pour meulage de la face arrière d'une plaquette de semi-conducteur
US20050221598A1 (en) * 2004-03-31 2005-10-06 Daoqiang Lu Wafer support and release in wafer processing
WO2005101459A2 (fr) * 2004-04-15 2005-10-27 Infineon Technologies Ag Procede d'usinage d'une piece sur un porte-piece
US20070145602A1 (en) * 2005-12-22 2007-06-28 Princo Corp. Structure Combining an IC Integrated Substrate and a Carrier, and Method of Manufacturing such Structure
AT503053A2 (de) * 2006-01-03 2007-07-15 Erich Thallner Kombination aus einem träger und einem wafer

Also Published As

Publication number Publication date
EP2238618A4 (fr) 2011-03-09
CA2711266A1 (fr) 2009-07-30
WO2009094558A3 (fr) 2009-09-24
DE112009000140B4 (de) 2022-06-15
JP5558531B2 (ja) 2014-07-23
US9099512B2 (en) 2015-08-04
EP2238618B1 (fr) 2015-07-29
WO2009094558A2 (fr) 2009-07-30
JP2012253367A (ja) 2012-12-20
DE202009018064U1 (de) 2010-12-02
US9111981B2 (en) 2015-08-18
KR101096142B1 (ko) 2011-12-19
PT2238618E (pt) 2015-09-03
US20110069467A1 (en) 2011-03-24
AT508318A2 (de) 2010-12-15
JP5111620B2 (ja) 2013-01-09
TW200946628A (en) 2009-11-16
AT508318A3 (de) 2015-12-15
IL206872A (en) 2015-07-30
US20090218560A1 (en) 2009-09-03
DE112009000140T5 (de) 2010-11-18
RU2010129076A (ru) 2012-01-20
IL206872A0 (en) 2010-12-30
CN101925996A (zh) 2010-12-22
EP2238618A2 (fr) 2010-10-13
CN101925996B (zh) 2013-03-20
KR20100095021A (ko) 2010-08-27
JP2011510518A (ja) 2011-03-31
TWI439526B (zh) 2014-06-01
AT508318B1 (de) 2022-07-15

Similar Documents

Publication Publication Date Title
AT508318B1 (de) Verfahren für eine vorübergehende montage eines bausteinwafers auf einem trägersubstrat
AT510068B1 (de) Verfahren und vorrichtung zur entfernung eines reversibel montierten bausteinwafers von einem trägersubstrat
EP2733734B1 (fr) Multiples couches de liaison de manipulation de plaquette fine
DE102009042920B4 (de) Verfahren zur Herstellung eines Halbleiter-Bauelements und Verfahren zur Herstellung mehrerer Halbleiter-Bauelemente
WO2018157937A1 (fr) Procédé et dispositif d'assemblage de puces
WO2013120648A1 (fr) Procédé permettant une liaison temporaire d'un substrat de produit avec un substrat de support
EP2572380B1 (fr) Procédé de fabrication d'empilements de puces ainsi que support pour la mise en ouvre du procédé
DE10340409B4 (de) Trägerwafer und Verfahren zum Bearbeiten eines Halbleiterwafers unter Verwendung eines Trägerwafers
DE10339998B3 (de) Verfahren zum Verbinden einer Oberfläche eines Halbleitersubstrats mit einer Oberfläche eines Trägers
DE10139056B4 (de) Verfahren zum Dünnen eines scheibenförmigen Gegenstands sowie zur Herstellung eines beidseitig strukturierten Halbleiterbauelements
DE102021209979A1 (de) Verfahren zur bearbeitung eines substrats

Legal Events

Date Code Title Description
MK07 Expiry

Effective date: 20190131