JP5933724B2 - 支持ウェハを被覆する装置及び方法 - Google Patents
支持ウェハを被覆する装置及び方法 Download PDFInfo
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- JP5933724B2 JP5933724B2 JP2014531110A JP2014531110A JP5933724B2 JP 5933724 B2 JP5933724 B2 JP 5933724B2 JP 2014531110 A JP2014531110 A JP 2014531110A JP 2014531110 A JP2014531110 A JP 2014531110A JP 5933724 B2 JP5933724 B2 JP 5933724B2
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- Prior art keywords
- coating
- coating material
- support wafer
- inner circular
- coated
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- 239000011248 coating agent Substances 0.000 title claims description 152
- 238000000576 coating method Methods 0.000 title claims description 150
- 238000000034 method Methods 0.000 title claims description 21
- 239000000463 material Substances 0.000 claims description 95
- 239000003112 inhibitor Substances 0.000 claims description 24
- 239000002904 solvent Substances 0.000 claims description 23
- 239000006185 dispersion Substances 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 64
- 239000000853 adhesive Substances 0.000 description 16
- 230000001070 adhesive effect Effects 0.000 description 16
- 239000010410 layer Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000003860 storage Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Coating Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
3 支持ウェハ
3b 被覆面
3u 下面
4 第2の塗布手段
4l 管路
4d ノズル
4e 出口端部
5 第1の塗布手段
5l 管路
5d ノズル
5e 出口端部
6 回転軸
7a 外側円環面
7i 内側円形面
7e 周縁部
7r 内側に位置する縁部
7u 周区分
8 接着剤
9 被覆材料
R 回転軸線
X 半径
B リング幅
Claims (11)
- 支持ウェハ(3)の被覆面(3b)の内側円形面(7i)を、抗付着材料として形成された被覆材料(9)で被覆する装置であって、
前記内側円形面(7i)に、該内側円形面(7i)を被覆すべき被覆材料(9)を塗布する第1の塗布手段(5)と、
回転軸線(R)を中心として前記支持ウェハ(3)を支持し、回転させ、前記被覆面(3b)上に前記被覆材料を分散させる回転手段(2,6)とを有する装置において、
第2の塗布手段(4)が、前記内側円形面(7i)を取り囲む外側円環面(7a)に、前記被覆材料(9)の分散中における前記外側円環面(7a)の被覆を少なくとも抑制する被覆抑制剤を供給する制御手段を有しており、
前記被覆抑制剤と前記被覆材料(9)とが混合することは殆どないことを特徴とする、支持ウェハ(3)の被覆面(3b)の内側円形面(7i)を、抗付着材料として形成された被覆材料(9)で被覆する装置。 - 前記被覆抑制剤は、前記被覆材料(9)を溶解可能な溶剤である、請求項1記載の装置。
- 前記第1の塗布手段(5)は、前記被覆材料(9)の塗布が回転の回転軸線(R)の領域で、前記支持ウェハ(3)に対して同心的に行われるように、配置されている、請求項1又は2記載の装置。
- 前記第2の塗布手段は、前記被覆抑制剤の塗布が前記外側円環面(7a)の少なくとも周区分(7u)で、前記外側円環面(7a)の半径方向内側に位置する縁部(7r)の領域で行われるように配置されている、請求項1から3までのいずれか1項記載の装置。
- 前記第1の塗布手段(5)又は第2の塗布手段(4)の塗布量又は塗布圧又は塗布速度又は塗布角度又は塗布時点を制御する制御手段が設けられている、請求項1から4までのいずれか1項記載の装置。
- 前記被覆材料(9)を硬化させる硬化手段が設けられている、請求項1から5までのいずれか1項記載の装置。
- 前記第2の塗布手段(4)は、出口端部(4e)を前記外側円環面(7a)に向けて配置可能な少なくとも1つの管路(4l)を有している、請求項1から6までのいずれか1項記載の装置。
- 前記第2の塗布手段(4)は、各出口端部(4e)に制御可能なノズル(4d)を有している、請求項1から7までのいずれか1項記載の装置。
- 支持ウェハ(3)の被覆面(3b)の内側円形面(7i)を、抗付着材料として形成された被覆材料(9)で被覆する方法であって、
第1の塗布手段(5)によって前記内側円形面(7i)に前記被覆材料(9)を塗布し、回転手段(2,6)による回転軸線(R)を中心とした支持ウェハ(3)の回転により前記被覆材料(9)を分散させる、ステップを有している方法において、
前記被覆材料(9)の分散中に、第2の塗布手段(4)によって、前記内側円形面(7i)を取り囲む外側円環面(7a)に、該外側円環面(7a)の被覆を少なくとも抑制する被覆抑制剤を供給することを含み、
前記被覆抑制剤と前記被覆材料(9)とが混合することは殆どないことを特徴とする、支持ウェハ(3)の被覆面(3b)の内側円形面(7i)を、抗付着材料として形成された被覆材料(9)で被覆する方法。 - 前記被覆材料(9)の塗布を、回転軸線(R)の領域で、前記支持ウェハ(3)に対して同心的に行う、請求項9記載の方法。
- 前記被覆抑制剤の塗布を、外側円環面(7a)の少なくとも周区分(7u)で、外側円環面(7a)の半径方向内側に位置する縁部(7r)の領域において、前記被覆材料(9)の塗布と時間をずらして行う、請求項9又は10記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2011/066345 WO2013041129A1 (de) | 2011-09-20 | 2011-09-20 | Vorrichtung und verfahren zur beschichtung eines trägerwafers |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014529193A JP2014529193A (ja) | 2014-10-30 |
JP5933724B2 true JP5933724B2 (ja) | 2016-06-15 |
Family
ID=44674792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014531110A Active JP5933724B2 (ja) | 2011-09-20 | 2011-09-20 | 支持ウェハを被覆する装置及び方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10497601B2 (ja) |
EP (1) | EP2745314B1 (ja) |
JP (1) | JP5933724B2 (ja) |
SG (1) | SG2014009955A (ja) |
TW (1) | TWI544970B (ja) |
WO (1) | WO2013041129A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113171936B (zh) * | 2021-04-16 | 2023-07-04 | 华虹半导体(无锡)有限公司 | 光刻工艺中的涂胶方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6240458A (ja) * | 1985-08-19 | 1987-02-21 | Fujitsu Ltd | 薄膜パタ−ンの露光方法 |
US5705223A (en) * | 1994-07-26 | 1998-01-06 | International Business Machine Corp. | Method and apparatus for coating a semiconductor wafer |
US5952050A (en) * | 1996-02-27 | 1999-09-14 | Micron Technology, Inc. | Chemical dispensing system for semiconductor wafer processing |
US6033589A (en) | 1997-09-30 | 2000-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for depositing a coating layer on a wafer without edge bead formation |
KR100604024B1 (ko) * | 1999-04-19 | 2006-07-24 | 동경 엘렉트론 주식회사 | 도포막 형성방법 및 도포장치 |
JP4757126B2 (ja) * | 2005-10-11 | 2011-08-24 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP2008288488A (ja) * | 2007-05-21 | 2008-11-27 | Sokudo:Kk | 基板処理装置および基板処理方法 |
JP2009088384A (ja) | 2007-10-02 | 2009-04-23 | Sokudo:Kk | 基板処理装置 |
US9111981B2 (en) * | 2008-01-24 | 2015-08-18 | Brewer Science Inc. | Method for reversibly mounting a device wafer to a carrier substrate |
EP2199854B1 (en) * | 2008-12-19 | 2015-12-16 | Obducat AB | Hybrid polymer mold for nano-imprinting and method for making the same |
-
2011
- 2011-09-20 EP EP11760472.8A patent/EP2745314B1/de active Active
- 2011-09-20 SG SG2014009955A patent/SG2014009955A/en unknown
- 2011-09-20 WO PCT/EP2011/066345 patent/WO2013041129A1/de active Application Filing
- 2011-09-20 JP JP2014531110A patent/JP5933724B2/ja active Active
- 2011-09-20 US US14/345,733 patent/US10497601B2/en active Active
-
2012
- 2012-09-20 TW TW101134553A patent/TWI544970B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2013041129A1 (de) | 2013-03-28 |
US20140227440A1 (en) | 2014-08-14 |
EP2745314B1 (de) | 2017-03-15 |
TWI544970B (zh) | 2016-08-11 |
SG2014009955A (en) | 2014-08-28 |
TW201318714A (zh) | 2013-05-16 |
EP2745314A1 (de) | 2014-06-25 |
US10497601B2 (en) | 2019-12-03 |
JP2014529193A (ja) | 2014-10-30 |
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