WO2018233297A1 - 一种有机发光二极管显示面板及其制作方法、显示装置 - Google Patents

一种有机发光二极管显示面板及其制作方法、显示装置 Download PDF

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WO2018233297A1
WO2018233297A1 PCT/CN2018/074828 CN2018074828W WO2018233297A1 WO 2018233297 A1 WO2018233297 A1 WO 2018233297A1 CN 2018074828 W CN2018074828 W CN 2018074828W WO 2018233297 A1 WO2018233297 A1 WO 2018233297A1
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layer
cathode
auxiliary electrode
anode
pattern
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PCT/CN2018/074828
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English (en)
French (fr)
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王辉锋
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京东方科技集团股份有限公司
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Priority to US16/328,834 priority Critical patent/US10971551B2/en
Publication of WO2018233297A1 publication Critical patent/WO2018233297A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80523—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to an organic light emitting diode display panel, a method of fabricating the same, and a display device.
  • the organic light emitting diode (OLED) display panel has been widely recognized due to its advantages of self-luminescence, fast response, wide viewing angle, high brightness, colorful color, and thinness.
  • the cathode in order to increase the light transmittance, the cathode needs to adopt a thin transparent conductive material, but the thin transparent cathode has a large square resistance, and a current flows through the cathode to generate a larger a large voltage drop, therefore, the smaller the cathode voltage obtained on the pixel farther from the power supply point, the lower the display brightness of the pixel is compared to the display brightness of the pixel closer to the power supply point, thereby making the OLED display device The brightness uniformity is deteriorated.
  • the present disclosure provides an organic light emitting diode display panel, a manufacturing method thereof, and a display device, which avoids the problem that the brightness uniformity of the OLED display panel is poor due to a large cathode resistance.
  • an organic light emitting diode display panel including: a substrate substrate; an anode and an auxiliary electrode disposed over the substrate substrate, the anode and the auxiliary electrode Insulating each other; a pixel defining layer disposed over the anode and the auxiliary electrode, the pixel defining layer having a pixel opening region exposing the anode and a via having exposing the auxiliary electrode, the pixel opening region An edge between the edge of the pixel defining layer and the anode, the via having an acute angle between an edge of the pixel defining layer and the auxiliary electrode; and a light emitting layer sequentially disposed above the pixel defining layer And a cathode; the cathode is electrically connected to the auxiliary electrode disposed in the via.
  • the cathode includes a cathode metal layer in contact with the light emitting layer and a cathode transparent layer disposed on the cathode metal layer.
  • the cathode metal layer disposed in the via hole is discontinuous with the cathode metal layer disposed on both sides of the via hole, and the cathode transparent conductive layer disposed in the via hole And the cathode transparent conductive layer disposed on both sides of the via hole is continuous, and the cathode transparent conductive layer is filled to an acute angle of the via hole, so that the cathode transparent conductive layer and the auxiliary in the via hole Electrode contact.
  • the thickness of the cathode transparent conductive layer is greater than the thickness of the cathode metal layer.
  • the cathode metal layer has a thickness of 1-30 nm.
  • the cathode transparent conductive layer has a thickness of 10 to 1000 nm.
  • the auxiliary electrode and the anode are made of the same material and disposed in the same layer.
  • an organic light emitting diode display device comprising the organic light emitting diode display panel as described above provided by an embodiment of the present disclosure.
  • a method of fabricating an organic light emitting diode display panel comprising: forming a pattern of an anode and an auxiliary electrode on a base substrate, the anode and the auxiliary electrode being insulated from each other; a process of forming a pattern of a pixel defining layer over the anode and the auxiliary electrode, wherein the pixel defining layer has a pixel opening region exposing the anode and a via having an exposed auxiliary electrode, the pixel opening region An edge of the pixel defining layer is at an obtuse angle with the anode, the via hole is an acute angle between an edge of the pixel defining layer and the auxiliary electrode; and a light emitting layer is sequentially formed on the pixel defining layer And a pattern of the cathode, and the cathode is electrically connected to the auxiliary electrode in the via.
  • forming a pattern of a pixel defining layer on the anode and the auxiliary electrode by one patterning process includes: Forming a pixel defining layer over the pattern of the anode and the auxiliary electrode; respectively exposing the pixel defining layer by light having a first tilt angle and light having a second tilt angle to expose the pixel defining layer a pixel opening area of the anode and a pattern of a via hole exposing the auxiliary electrode, and the pixel opening area makes an obtuse angle between an edge of the pixel defining layer and the anode, the via hole making the pixel
  • the edge of the defined layer is at an acute angle to the auxiliary electrode.
  • sequentially forming a pattern of the light emitting layer and the cathode over the pixel defining layer including: Forming a pattern of the light emitting layer over the pixel defining layer; forming a pattern of the cathode metal layer over the pattern of the light emitting layer, and the cathode metal layer in the via and the cathode on both sides of the via a metal layer discontinuous; forming a pattern of a cathode transparent conductive layer over the cathode metal layer, wherein the cathode includes the cathode metal layer and the cathode transparent conductive layer, and the cathode in the via is transparent a conductive layer continuous with the cathode transparent conductive layer on both sides of the via hole, the cathode transparent conductive layer being filled to an acute angle of the via hole, such that the cathode transparent conductive layer
  • a pattern of a cathode metal layer is formed on a pattern of the light emitting layer, including: by evaporation
  • a pattern of a cathode metal layer is formed over the pattern of the light-emitting layer.
  • a pattern of a cathode transparent conductive layer is formed on the cathode metal layer, including: by sputtering
  • a pattern of a cathode transparent conductive layer is formed over the cathode metal layer.
  • FIG. 1 is a schematic structural diagram of an organic light emitting diode display panel according to an embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram of an organic light emitting diode display device according to an embodiment of the present disclosure
  • FIG. 3 is a schematic flow chart of a method for fabricating an organic light emitting diode display panel according to an embodiment of the present disclosure
  • FIG. 4 is a schematic structural diagram of a method for fabricating a pixel defining layer after performing each step according to an embodiment of the present disclosure
  • FIG. 5 is a schematic structural diagram of another method for fabricating a pixel defining layer after performing each step according to an embodiment of the present disclosure
  • FIG. 6 is a schematic structural diagram of a method for fabricating an organic light emitting diode display panel after performing each step according to an embodiment of the present disclosure.
  • the present disclosure provides an organic light emitting diode display panel, a manufacturing method thereof, and a display device to avoid the problem that the brightness uniformity of the OLED display panel is poor due to a large cathode resistance.
  • an organic light emitting diode display panel provided by an embodiment of the present disclosure includes: a substrate substrate 01; an anode 02 and an auxiliary electrode 03 disposed on the substrate substrate 01, and a film disposed on the anode 02 and the auxiliary electrode 03.
  • a pixel above the layer defines a layer 04, and a luminescent layer 05 and a cathode 06 which are sequentially disposed over the pixel defining layer 04.
  • the anode 02 and the auxiliary electrode 03 are insulated from each other, and the pixel defining layer 04 has a pixel opening region 041 exposing the anode and a via hole 042 having the exposed auxiliary electrode 03.
  • the pixel opening region 041 makes an obtuse angle (90°-180°) between the edge of the pixel defining layer and the anode, as shown by an angle a1 in FIG. 1, the via hole 042 makes an acute angle between the edge of the pixel defining layer and the auxiliary electrode. (0°-90°), as shown by the angle a2 in Fig. 1.
  • the cathode 06 is electrically connected to the auxiliary electrode 03 disposed in the via hole.
  • the light-emitting layer in the via hole and the auxiliary light-emitting layer are discontinuous due to the via hole being at an acute angle between the edge of the pixel defining layer and the auxiliary electrode. , that is, disconnection. Since the light-emitting layer is not present at the acute angle of the via hole, when the cathode is formed over the light-emitting layer, the cathode is filled at an acute angle in the via hole so that the cathode is in direct contact with the auxiliary electrode, thereby electrically connecting the auxiliary electrode.
  • the via hole in the embodiment of the present disclosure due to the existence of an acute angle, that is, a shape having a narrow width and a narrow shape is present; and an acute angle is not present in the pixel opening region, and the shape is wide and narrow.
  • an acute angle that is, a shape having a narrow width and a narrow shape is present; and an acute angle is not present in the pixel opening region, and the shape is wide and narrow.
  • the vias and pixel openings of the present disclosure may take a variety of shapes and are not limited to the shapes illustrated in the figures and in the examples as examples.
  • the pixel opening area makes the edge of the pixel defining layer and the anode obtuse, the light emitting layer and the cathode are both continuous at the pixel opening area, and the light emitting layer between the anode and the cathode is a pixel area;
  • the edge of the pixel defining layer has an acute angle with the auxiliary electrode, so that a fault occurs when the light emitting layer is formed at the via hole, that is, the light emitting layer in the via hole and the light emitting layer on both sides of the via hole are broken, and the existence of an acute angle in the via hole causes
  • the luminescent layer cannot be filled into the acute angle, so when the cathode is formed on the luminescent layer, the cathode is directly in contact with the auxiliary electrode, and the auxiliary electrode is electrically connected, thereby avoiding the existence of the auxiliary electrode and the auxiliary electrode and the cathode.
  • the problem of illuminating the luminescent layer is possible to be a fault occurs when the
  • the via hole makes the edge of the pixel defining layer and the auxiliary electrode There is an acute angle between them, so that a fault occurs when the light-emitting layer above the pixel defining layer is formed, that is, the light-emitting layer in the via hole and the light-emitting layer on both sides of the via hole are broken, and the existence of an acute angle in the via hole makes the light-emitting layer cannot be filled.
  • the auxiliary electrode and the cathode are electrically connected through the via hole when forming the cathode over the light-emitting layer. Therefore, in the embodiment of the present disclosure, the auxiliary electrode is added, and the auxiliary electrode is electrically connected to the cathode, thereby reducing the resistance of the cathode. The problem of poor brightness uniformity of the OLED display panel is avoided.
  • the cathode 06 may include a cathode metal layer 061 in contact with the light emitting layer 05 and a cathode transparent conductive layer 062 disposed on the cathode metal layer 061;
  • the cathode metal layer 061 disposed in the via hole 042 is discontinuous from the cathode metal layer 061 disposed on both sides of the via hole 042, and the cathode transparent conductive layer 062 disposed in the via hole 042 and the cathode disposed on both sides of the via hole 042 are transparent.
  • the conductive layer 062 is continuous, and the cathode transparent conductive layer 062 is filled at an acute angle of the via 042 such that the cathode transparent conductive layer 062 is electrically connected to the auxiliary electrode 03 in the via.
  • the light emitting layer may be formed of a low molecular weight organic material or a high molecular weight organic material, the light emitting layer includes an organic emission layer, and may further include a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron. At least one of the injection layers (EIL). However, in addition to the organic emission layer, the light-emitting layer may include other various functional layers.
  • HIL hole injection layer
  • HTL hole transport layer
  • ETL electron transport layer
  • ETL electron transport layer
  • EIL electron transport layer
  • the light-emitting layer may include other various functional layers.
  • the cathode includes a cathode metal layer and a cathode transparent conductive layer, wherein the cathode metal layer may be formed of aluminum (Al), magnesium (Mg), silver (Ag), or the like and a compound thereof, and the cathode transparent conductive layer may be composed of, for example, ITO, IZO, ZnO. Or a transparent electrode material such as In2O3 is formed.
  • the pixel defining layer may be formed of an organic material such as polyimide (PI), polyamide, benzocyclobutene (BCB), acryl resin, or phenol resin.
  • the cathode metal layer can be made thinner, so that the light is well transmitted or reflected, and thus a phenomenon occurs when the cathode metal layer is formed at a position where the via has an acute angle. That is, the cathode metal layer in the via is discontinuous from the cathode metal layer on both sides of the via.
  • the thickness of the cathode transparent conductive layer can be made larger than the thickness of the cathode metal layer, and therefore, when the cathode transparent conductive layer is formed, it can be formed at an acute angle in the via hole, so that the cathode transparent conductive layer is in direct contact with the auxiliary electrode, thereby The cathode transparent conductive layer in the via is continuous with the cathode transparent conductive layer on both sides of the via.
  • the thickness of the cathode transparent conductive layer may be greater than the thickness of the cathode metal layer.
  • the thickness of the cathode metal layer may be any value between 1 and 30 nm; the thickness of the cathode transparent conductive layer may be any value between 10 and 1000 nm. There is no limit here.
  • the materials of the auxiliary electrode and the anode may be the same, and may be disposed in the same layer.
  • the auxiliary electrode is the same as the anode material and is provided only in one layer structure.
  • the auxiliary electrode may also be formed of the same material as the anode material and including two reflective layers and a transparent electrode.
  • the auxiliary electrode is disposed in the same layer as the anode.
  • the OLED display panel provided by the embodiment of the present disclosure, by adding an auxiliary electrode in the display panel, and by forming a via defining layer, a via hole exposing the auxiliary electrode is formed, the via hole making the pixel defining layer
  • the auxiliary electrodes are at an acute angle to electrically connect the auxiliary electrode and the cathode through the via holes when forming the light emitting layer and the cathode over the pixel defining layer. Therefore, in the embodiment of the present disclosure, by adding the auxiliary electrode and electrically connecting the auxiliary electrode and the cathode, the resistance of the cathode is reduced, and the problem that the brightness uniformity of the OLED display panel is poor is avoided.
  • an embodiment of the present disclosure further provides an organic light emitting diode display device, including the organic light emitting diode display panel of any of the above embodiments provided by the embodiments of the present disclosure.
  • a display device further includes: a thin film transistor electrically connected to the anode.
  • the thin film transistor sequentially includes a gate electrode 10 disposed over the base substrate 01, a gate insulating layer 11, and a semiconductor active layer 12 disposed over the gate insulating layer 11, wherein the semiconductor active layer includes doping through the N a source region and a drain region formed by a type of impurity ions or P-type impurity ions, and a channel region not doped with impurities between the source region and the drain region; forming a source on the semiconductor active layer 12 In the pattern of the pole 13 and the drain 14, the source 13 and the drain 14 are electrically connected to the source region and the drain region in the semiconductor active layer, respectively.
  • the source 13 and the drain 14 further include a planarization layer 15 between the film layer and the anode 02.
  • the anode 02 of the OLED light-emitting device is electrically connected to the source 13 or the drain 14 .
  • FIG. 2 only the anode 02 and the drain 14 are electrically connected as an example.
  • the OLED display device includes an OLED light emitting device arranged in an array, and a thin film transistor electrically connected to each OLED light emitting device, wherein the auxiliary electrode in the embodiment of the present disclosure may be combined with the OLED light emitting device.
  • a plurality of OLED light-emitting devices may be connected to one auxiliary electrode, that is, a plurality of OLED light-emitting devices are connected to one auxiliary electrode, which is not limited herein.
  • the thin film transistor in the display device of the embodiment of the present disclosure is described by way of example only of a bottom-gate type thin film transistor.
  • the thin film transistor is not limited to a bottom gate type, and may be a top gate type, which is not limited herein.
  • an embodiment of the present disclosure further provides a method for fabricating an organic light emitting diode display panel. Referring to FIG. 3, the method includes the following steps.
  • a pattern of an anode and an auxiliary electrode are formed on the base substrate, and the anode and the auxiliary electrode are insulated from each other.
  • a pattern of pixel defining layers is formed over the anode and the auxiliary electrode by a patterning process.
  • the pixel defining layer has a pixel opening region exposing the anode and a via having an exposed auxiliary electrode, the pixel opening region making an obtuse angle between the edge of the pixel defining layer and the anode, the via hole between the edge of the pixel defining layer and the auxiliary electrode It is an acute angle.
  • patterns of the luminescent layer and the cathode are sequentially formed over the pixel defining layer, and the cathode is electrically connected to the auxiliary electrode in the via.
  • the patterning process in the embodiment of the present disclosure may include only a photolithography process, or may include a photolithography process and an etching step, and may also include other processes of printing, inkjet, and the like to form a predetermined pattern; A process of forming a pattern by using a photoresist, a mask, an exposure machine, or the like in a process of film formation, exposure, development, and the like.
  • the corresponding patterning process can be selected in accordance with the structures formed in the present disclosure.
  • a mask when forming a pattern of a pixel defining layer, a mask may be formed by using an exposure method of different tilt angles at one time, or an exposure method of two different tilt angles may be used for forming a mask. , not limited here.
  • the pattern of the pixel defining layer is formed on the anode and the auxiliary electrode by one patterning process, including: forming a pixel definition above the pattern of the anode and the auxiliary electrode a layer exposing the pixel defining layer by the light having the first oblique angle and the light having the second oblique angle, respectively, so that the pixel defining layer forms a pattern of the pixel opening region exposing the anode and the via hole exposing the auxiliary electrode, And the pixel opening area makes the edge of the pixel defining layer and the anode have an obtuse angle, and the via hole makes the edge of the pixel defining layer and the auxiliary electrode have an acute angle.
  • step 1 a pattern of the anode 02 and the auxiliary electrode 03 is formed on the base substrate 01 as shown in FIG. 4a; and in step 2, a whole layer of pixels is formed over the film layer where the anode 02 and the auxiliary electrode 03 are located.
  • the layer 04 is defined, as shown in FIG. 4b, wherein the material of the pixel defining layer is a negative adhesive material; and in the third step, when the pixel defining layer 04 is exposed for the first time, the light is set to be irradiated from the upper left to the lower right.
  • the direction of the arrow of the light as shown in FIG. 4c, wherein the tilt angle of the light can be set according to the actual application to form the pixel definition layer 04 shown in FIG.
  • the pixel definition layer 04 is shown to the pixel shown in FIG. 4c.
  • the pixel defining layer 04 that is, a pattern forming the pixel opening region 041 and the via hole 042.
  • steps 3 and 4 are respectively irradiated by two exposures, but it should be understood that the light may be irradiated with light having different inclination angles by one exposure. And for the pixel definition layer of the negative material, the light illuminates the area of the pixel definition layer that needs to be preserved.
  • the method of forming the pattern of the pixel defining layer may further include: step one, forming a pattern of the anode 02 and the auxiliary electrode 03 on the base substrate 01, as shown in FIG. 5a; and step two, at the anode 02 and A pixel defining layer 04 is formed over the film layer where the auxiliary electrode 03 is located, as shown in FIG. 5b, wherein the material of the pixel defining layer is a positive material; and in step 3, when the pixel defining layer 04 is exposed for the first time, The light is set to be illuminated from the upper left to the lower right direction, as shown by the arrow direction of the light as shown in FIG.
  • the tilt angle of the light can be set according to an actual application to form the pixel definition layer 04 shown in FIG. 5c; 4.
  • the pixel defining layer 04 shown in FIG. 5c is subjected to a second exposure, and the light is set to be irradiated from the upper right to the lower left direction, as shown by the arrow direction of the light as shown in FIG. 5d, wherein the tilt angle of the light is
  • the pixel defining layer 04 shown in FIG. 5d that is, the pattern of the pixel opening region 041 and the via hole 042, may be formed according to an actual application.
  • Steps 3 and 4 are respectively irradiated by two exposures, or may be irradiated by light having one exposure and light having different inclination angles. And for the pixel definition layer of the positive material, the area where the light defining the pixel definition layer needs to be etched away.
  • the pattern of the light-emitting layer and the cathode is sequentially formed on the pixel defining layer, including: forming a pattern of the light-emitting layer over the pixel defining layer; Forming a pattern of a cathode metal layer over the pattern of the layer, and the cathode metal layer in the via is discontinuous with the cathode metal layer on both sides of the via; a pattern of the cathode transparent conductive layer is formed over the cathode metal layer, wherein the cathode includes a cathode metal layer and a cathode transparent conductive layer, and the cathode transparent conductive layer in the via is continuous with the cathode transparent conductive layer on both sides of the via, and the cathode transparent conductive layer is filled at an acute angle of the via hole, so that the cathode transparent conductive layer and the via hole
  • the cathode in the embodiment of the present disclosure includes a cathode metal layer and a cathode transparent conductive layer, and in order to increase the transmission effect of the cathode, the cathode metal layer is made thinner, so that when the cathode metal layer is formed at the via hole, the same is generated as the light-emitting layer.
  • the pattern, that is, the cathode metal layer creates a fault in the via.
  • the cathode transparent conductive layer is filled into the acute angle when the cathode transparent conductive layer is formed, so that the cathode transparent conductive layer is in direct contact with the auxiliary electrode, thereby electrically connecting the auxiliary electrode and the cathode.
  • a transparent conductive layer and a cathode metal layer are used. Therefore, in the manufacturing method of the display panel provided in the embodiment of the present disclosure, only the process of fabricating the auxiliary electrode is added once, and the problem of small cathode resistance can be solved without adding other processes.
  • forming a pattern of a cathode metal layer over the pattern of the light emitting layer includes: forming a cathode metal over the pattern of the light emitting layer by evaporation The pattern of the layers.
  • a cathode metal layer may be deposited on the light-emitting layer by evaporation, and the molecules or atoms move in a linear manner during vapor deposition, so that only a linear type can be formed.
  • the film layer causes the cathode metal layer to break at the via hole, and the auxiliary electrode is not connected to the cathode metal layer.
  • the pattern of the cathode transparent conductive layer is formed on the cathode metal layer, including: forming a cathode transparent conductive on the cathode metal layer by sputtering The pattern of the layers.
  • a cathode transparent conductive layer may be deposited on the cathode metal layer by sputtering, so that the molecules or atoms move in a scattering manner, thereby being within an acute angle of the via.
  • the cathode transparent conductive layer is filled, and the cathode transparent conductive layer is in direct contact with the auxiliary electrode in the via hole to electrically connect the auxiliary electrode.
  • the film layer of the cathode transparent conductive layer is continuous.
  • a method of fabricating an organic light emitting diode display panel provided by an embodiment of the present disclosure is described in detail below by way of exemplary embodiments.
  • the method for fabricating the OLED display panel provided by the embodiment of the present disclosure is described below by taking a pixel defining layer of a positive material as an example.
  • the manufacturing method may include the following steps.
  • a pattern of the anode 02 and the auxiliary electrode 03 is formed on the base substrate 01, and a pattern of the pixel defining layer 04 is formed over the anode 02 and the auxiliary electrode 03 by double exposure or one exposure of one mask.
  • the pixel defining layer 04 includes a pixel opening region 041 having an exposed anode 02, and the pixel opening region is such that the edge of the pixel defining layer is obtusely angled with the anode, and further includes a via hole 042 having the exposed auxiliary electrode 03, and the via hole
  • the acute defined angle between the edge of the pixel defining layer and the auxiliary electrode is as shown in Figure 6a.
  • step two a pattern of the light-emitting layer 05 is formed over the pixel defining layer 04, and as shown in FIG. 6b, the light-emitting layer 05 forms a fault at the via hole 042.
  • a cathode metal layer 061 is formed on the light-emitting layer 05 by evaporation, as shown in FIG. 6c, the cathode metal layer 061 forms a fault at the via hole 042, and there is no acute angle in the via hole 042.
  • the cathode metal layer is filled.
  • a cathode transparent conductive layer 062 is formed on the cathode metal layer 061 by sputtering.
  • the molecules or atoms move in a scattering manner during sputtering, so that the cathode transparent conductive layer 062 is filled to the acute angle of the via 042.
  • the organic light emitting diode provided by the embodiment of the present disclosure adds an auxiliary electrode in the display panel, and forms a via hole exposing the auxiliary electrode when forming the pixel defining layer, and the via hole makes the edge of the pixel defining layer An acute angle with the auxiliary electrode, so that a fault occurs when the light-emitting layer above the pixel defining layer is formed, that is, the light-emitting layer in the via hole and the light-emitting layer on both sides of the via hole are broken, and the existence of an acute angle at the via hole causes the light-emitting layer It cannot be filled into the acute angle, so when the cathode above the light-emitting layer is formed, the auxiliary electrode and the cathode are electrically connected through the via. Therefore, in the embodiment of the present disclosure, by adding the auxiliary electrode and electrically connecting the auxiliary electrode and the cathode, the resistance of the cathode is reduced, and the problem that the brightness uniformity of the OLED display panel is poor is avoided

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Abstract

一种有机发光二极管显示面板及其制作方法、显示装置，用以避免由于阴极电阻较大，导致有机发光二极管显示面板的亮度均匀性较差的问题。该有机发光二极管显示面板包括：衬底基板（01）；设置在衬底基板（01）之上的阳极（02）和辅助电极（03），阳极（02）和辅助电极（03）相互绝缘；设置在阳极（02）和辅助电极（03）之上的像素定义层（04），像素定义层（04）具有露出阳极（02）的像素开口区域（041）和具有露出辅助电极（03）的过孔（042），像素开口区域（041）使像素定义层（04）的边缘与阳极（02）之间呈钝角，过孔（042）使像素定义层（04）的边缘与辅助电极（03）之间呈锐角；依次设置在像素定义层（04）之上的发光层（05）和阴极（06）；阴极（06）与设置在过孔（042）内的辅助电极（03）电性连接。

Description

一种有机发光二极管显示面板及其制作方法、显示装置 技术领域
本公开涉及显示技术领域，尤其涉及一种有机发光二极管显示面板及其制作方法、显示装置。
背景技术
在平板显示面板中，有机发光二极管(Organic Light Emitting Display，OLED)显示面板因具有自发光、反应快、视角广、亮度高、色彩艳、轻薄等优点而得到人们的广泛重视。
一般地，针对顶发射型的OLED发光器件，为了增大光的透过率，阴极需要采用较薄的透明导电材料，但较薄的透明阴极方阻很大，电流流过阴极时会产生较大的压降，因此，距离电源供给点越远的像素上获得的阴极电压越小，导致该像素的显示亮度相比于距离电源供给点较近的像素的显示亮度低，从而使得OLED显示装置的亮度均匀性变差。
发明内容
本公开提供了一种有机发光二极管显示面板及其制作方法、显示装置，避免了由于阴极电阻较大导致OLED显示面板的亮度均匀性较差的问题。
根据本公开的一方面，提供了一种有机发光二极管显示面板，所述显示面板包括：衬底基板；设置在所述衬底基板之上的阳极和辅助电极，所述阳极和所述辅助电极相互绝缘；设置在所述阳极和辅助电极之上的像素定义层，所述像素定义层具有露出所述阳极的像素开口区域和具有露出所述辅助电极的过孔，所述像素开口区域使所述像素定义层的边缘与所述阳极之间呈钝角，所述过孔使所述像素定义层的边缘与所述辅助电极之间呈锐角；依次设置在所述像素定义层之上的发光层和阴极；所述阴极与设置在所述过孔内的辅助电极电性连接。
在一种可能的实施方式中，本公开实施例提供的上述有机发光二极管显示面板中，所述阴极包括与所述发光层接触的阴极金属层和设置在所述阴极金属层之上的阴极透明导电层；其中，设置在所述过孔内的所述阴极金属层与设置在所述过孔两侧的所述阴极金属层不连续，设置在所述过孔内的所述阴极透明导电层与设置在所述过孔两侧的所述阴极透明导电层连续，且所述阴极透明导电层填充至所述过孔的锐角处，使得所述阴极透明导电层与所述过孔内的辅助电极接触。
在一种可能的实施方式中，本公开实施例提供的上述有机发光二极管显示面板中，所述阴极透明导电层的厚度大于所述阴极金属层的厚度。
在一种可能的实施方式中，本公开实施例提供的上述有机发光二极管显示面板中，所述阴极金属层的厚度为1-30nm。
在一种可能的实施方式中，本公开实施例提供的上述有机发光二极管显示面板中，所述阴极透明导电层的厚度为10-1000nm。
在一种可能的实施方式中，本公开实施例提供的上述有机发光二极管显示面板中，所述辅助电极与所述阳极的材料相同且同层设置。
根据本公开的第二方面，提供了一种有机发光二极管显示装置，包括本公开实施例提供的如上所述的有机发光二极管显示面板。
根据本公开的第三方面，提供了一种有机发光二极管显示面板的制作方法，该方法包括：在衬底基板上形成阳极和辅助电极的图案，所述阳极和辅助电极相互绝缘；通过一次构图工艺在所述阳极和辅助电极之上形成像素定义层的图案，其中，所述像素定义层具有露出所述阳极的像素开口区域和具有露出所述辅助电极的过孔，所述像素开口区域使所述像素定义层的边缘与所述阳极之间呈钝角，所述过孔使所述像素定义层的边缘与所述辅助电极之间呈锐角；依次在所述像素定义层之上形成发光层和阴极的图案，且所述阴极与所述过孔内的辅助电极电性连接。
在一种可能的实施方式中，本公开实施例提供的上述有机电致发光二极管显示面板的制作方法中，通过一次构图工艺在所述阳极和辅助电极之上形成像素定义层的图案，包括：在所述阳极和辅助电极的图案上方形成像素定义层；通过具有第一倾斜角度的光线以及具有第二倾斜角度的光线分别对所述像素定义层进行曝光工艺，使所述像素定义层形成露出所述阳极的像素开口区域以及露出所述辅助电极的过孔的图形，且所述像素开口区域使所述像素定义层的边缘与所述阳极之间呈钝角，所述过孔使所述像素定义层的边缘与所述辅助电极之间呈锐角。
在一种可能的实施方式中，本公开实施例提供的上述有机电致发光二极管显示面板的制作方法中，依次在所述像素定义层之上形成发光层和阴极的图案，包括：在所述像素定义层之上形成发光层的图案；在所述发光层的图案之上形成阴极金属层的图案，且所述过孔内的所述阴极金属层与所述过孔两侧的所述阴极金属层不连续；在所述阴极金属层之上形成阴极透明导电层的图案，其中，所述阴极包括所述阴极金属层和所述阴极透明导电层，所述过孔内的所述阴极透明导电层与所述过孔两侧的所述阴极透明导电层连续，所述阴极透明导电层填充至所述过孔的锐角处，使得所述阴极透明导电层与所述过孔内的辅助电极接触。
在一种可能的实施方式中，本公开实施例提供的上述有机电致发光二极管显示面板的制作方法中，在所述发光层的图案之上形成阴极金属层的图案，包括：通过蒸镀的方式在所述发光层的图案之上形成阴极金属层的图案。
在一种可能的实施方式中，本公开实施例提供的上述有机电致发光二极管显示面板的制作方法中，在所述阴极金属层之上形成阴极透明导电层的图案，包括：通过溅射的方式在所述阴极金属层之上形成阴极透明导电层的图案。
附图说明
图1为本公开实施例提供的一种有机发光二极管显示面板的结构示意图；
图2为本公开实施例提供的一种有机发光二极管显示装置的结构示意图；
图3为本公开实施例提供的一种有机发光二极管显示面板的制作方法的流程示意图；
图4a-图4d分别为本公开实施例提供的一种像素定义层的制作方法在执行每个步骤后的结构示意图；
图5a-图5d分别为本公开实施例提供的另一种像素定义层的制作方法在执行每个步骤后的结构示意图；
图6a-图6d分别为本公开实施例提供的一种有机发光二极管显示面板的制作方法在执行每个步骤后的结构示意图。
具体实施方式
为使本公开的上述目的、特征和优点能够更为明显易懂，下面将结合附图和实施例对本公开做进一步说明。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的实施方式；相反，提供这些实施方式使得本公开更全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。在图中相同的附图标记表示相同或类似的结构，因而将省略对它们的重复描述。本公开中所描述的表达位置与方向的词，均是以附图为例进行的说明，但根据需要也可以做出改变，所做改变均包含在本公开保护范围内。本公开的附图仅用于示意相对位置关系，某些部位的层厚采用了夸示的绘图方式以便于理解，附图中的层厚并不代表实际层厚的比例关系。
需要说明的是，在以下描述中阐述了具体细节以便于充分理解本公开。但是本公开能够以多种不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本公开原理的情况下做类似修改和变形。因此本公开不受下面公开的具体实施方式的限制。如在说明书及权利要求当中使用了某些词汇来指称特定组件，本领域技术人员应可理解，硬件制造商可能会用不同名词来称呼同一个组件。本说明书及权利要求并不以名称的差异来作为区分组件的方式，而是以组件在功能上的差异来作为区分的准则。如在通篇说明书及权利要求当中所提及的“包含/包括”为一开放式用语，故应解释成“包含但不限定于”。说明书后续描述为实施本申请的较佳实施方式，然所述描述乃以说明本申请的一般原则为目的，并非用以限定本申请的范围。本申请的保护范围当视所附权利要求所界定者为准。应理解，当元件诸如层、膜、区域或者衬底被称为位于另一个元件“上”时，其可以直接位于另一个元件上，或者可以插设有一个或多个中间元件。
本公开提供了一种有机发光二极管显示面板及其制作方法、显示装置，用以避免由于阴极电阻较大，导致OLED显示面板的亮度均匀性较差的问题。
下面结合附图，对本公开实施例提供的有机发光二极管显示面板及其制作方法、显示装置的示例性实施方式进行详细地说明。
附图中各膜层的厚度和形状不反映真实比例，目的只是示意说明本公开内容。
参见图1，本公开实施例提供的一种有机发光二极管显示面板包括：衬底基板01；设置在衬底基板01之上的阳极02和辅助电极03、设置在阳极02和辅助电极03所在膜层之上的像素定义层04，以及依次设置在像素定义层04之上的发光层05和阴极06。其中，阳极02和辅助电极03相互绝缘，像素定义层04具有露出阳极的像素开口区域041和具有露出辅助 电极03的过孔042。像素开口区域041使得像素定义层的边缘与阳极之间呈钝角(90°-180°)，如图1中的角a1所示，过孔042使得像素定义层的边缘与辅助电极之间呈锐角(0°-90°)，如图1中的角a2所示。阴极06与设置在过孔内的辅助电极03电性连接。
需要说明的是，在像素定义层之上形成发光层时，由于过孔使得像素定义层的边缘与辅助电极之间呈锐角，使得过孔中的发光层与过孔两侧的发光层不连续，即出现断开现象。由于在过孔的锐角处不存在发光层，因此，在形成发光层之上的阴极时，将阴极填充在过孔中的锐角处，使得阴极与辅助电极直接接触，从而电性连接辅助电极。其中，本公开实施例中的过孔中由于锐角的存在，即呈现下宽上窄的形状；而像素开口区域中不存在锐角，且呈现上宽下窄的形状。应理解，本公开的过孔和像素开口可以采用多种形状，不限于图中和实施例中作为例子示出的形状。
由于像素开口区域使得像素定义层的边缘与阳极之间呈钝角，因此在像素开口区域处形成发光层和阴极时均连续，且位于阳极与阴极之间的发光层为像素区域；由于过孔使得像素定义层的边缘与辅助电极之间呈锐角，因此在过孔处形成发光层时出现断层，即过孔内的发光层与过孔两侧的发光层产生断裂，过孔中锐角的存在使得发光层不能填充到锐角内，因此在形成发光层之上的阴极时，将阴极与辅助电极直接接触，电性连接辅助电极，从而避免了由于辅助电极的存在，使得辅助电极和阴极之间的发光层发光的问题。
本公开实施例提供的有机发光二极管显示面板中，通过在显示面板中增加辅助电极，且通过在形成像素定义层时，形成露出辅助电极的过孔，过孔使得像素定义层的边缘与辅助电极之间呈锐角，从而在形成像素定义层之上的发光层时出现断层，即过孔内的发光层与过孔两侧的发光层产生断裂，过孔中锐角的存在使得发光层不能填充到锐角内，因此在形成发光层之上的阴极时，通过过孔将辅助电极和阴极电性连接。因此，本公开实施例中通过增加辅助电极，且将辅助电极与阴极电性连接，从而减小了阴极的电阻。避免了OLED显示面板的亮度均匀性较差的问题。
本公开实施例提供的上述有机发光二极管显示面板中，参见图1，阴极06可包括与发光层05接触的阴极金属层061和设置在阴极金属层061之上的阴极透明导电层062；其中，设置在过孔042内的阴极金属层061与设置在过孔042两侧的阴极金属层061不连续，设置在过孔042内的阴极透明导电层062与设置在过孔042两侧的阴极透明导电层062连续，且阴极透明导电层062填充至过孔042的锐角处，使得阴极透明导电层062与过孔内的辅助电极03接触而电性连接。
OLED发光器件可包括阳极、发光层和阴极。其中，阳极可以为透明电极，可以由，例如，氧化铟锡(ITO)、氧化铟锌(IZO)、氧化锌(ZnO)或氧化铟(In2O3)等材料形成。阴极还可以为反射电极和设置在反射电极之上的透明电极，反射电极可以由Ag、镁(Mg)、Al、Pt、Pd、Au、Ni、Nd、铱(Ir)、Cr或者它们的混合物形成，透明电极可以由ITO、IZO、ZnO或In2O3等材料形成。发光层可以由低分子量有机材料或高分子量有机材料形成，发光层包括有机发射层，并且还可以包括空穴注入层(HIL)、空穴传输层(HTL)、电子传输层(ETL)和电子注入层(EIL)中的至少一个。然而除了有机发射层以外，发光层可以包括其它各种功能层。 阴极包括阴极金属层和阴极透明导电层，其中，阴极金属层可由铝(Al)、镁(Mg)、银(Ag)等及其化合物形成，阴极透明导电层可以由包括诸如ITO、IZO、ZnO或In2O3等的透明电极材料形成。像素定义层可以由诸如聚酰亚胺(PI)、聚酰胺、苯并环丁烯(BCB)、压克力树脂或酚醛树脂等的有机材料形成。
其中，针对顶发射型的OLED器件，可以使阴极金属层制作得较薄，从而使光线很好地透射或反射过去，因此在过孔具有锐角的地方形成阴极金属层时会产生断层的现象，即过孔内的阴极金属层与过孔两侧的阴极金属层不连续。另外，可以使得阴极透明导电层的厚度比阴极金属层的厚度大，因此，在形成阴极透明导电层时可以形成在过孔内的锐角处，使得阴极透明导电层与辅助电极直接接触，从而使得过孔内的阴极透明导电层和过孔两侧的阴极透明导电层连续。
本公开实施例提供的上述有机发光二极管显示面板中，阴极透明导电层的厚度可以大于阴极金属层的厚度。举例来说，阴极金属层的厚度可以为1-30nm之间任一数值；阴极透明导电层的厚度可以为10-1000nm之间的任一数值。在此不做限定。
本公开实施例提供的上述有机发光二极管显示面板中，辅助电极与阳极的材料可以相同，且可以同层设置。例如，当阳极为反射电极时，且仅为一层结构时，辅助电极与阳极材料相同，且仅为一层结构设置。若阳极为反射电极和透明电极两个膜层形成时，辅助电极也可以采用与阳极材料相同，且包括反射电极和透明电极两个膜层形成。且辅助电极与阳极同层设置。
本公开实施例提供的有机发光二极管显示面板中，通过在显示面板中增加辅助电极，且通过在形成像素定义层时，形成露出辅助电极的过孔，所述过孔使所述像素定义层与所述辅助电极之间呈锐角，从而在形成像素定义层之上的发光层和阴极时，通过过孔将辅助电极和阴极电性连接。因此，本公开实施例中通过增加辅助电极，且将辅助电极与阴极电性连接，从而减小了阴极的电阻，避免了OLED显示面板的亮度均匀性较差的问题。
基于同一发明思想，参见图2，本公开实施例还提供了一种有机发光二极管显示装置，包括本公开实施例提供的上述任一种的有机发光二极管显示面板。
参见图2，本公开实施例提供的显示装置，还包括：与阳极电连接的薄膜晶体管。薄膜晶体管依次包括设置在衬底基板01之上的栅极10、栅极绝缘层11，设置在栅极绝缘层11之上的半导体有源层12，其中半导体有源层中包括通过掺杂N型杂质离子或P型杂质离子而形成的源极区域和漏极区域，以及位于源极区域和漏极区域之间的区域不掺杂杂质的沟道区域；在半导体有源层12上形成源极13和漏极14的图形，源极13和漏极14分别电连接半导体有源层中的源极区域和漏极区域。其中，源极13和漏极14所述在膜层与阳极02之间还包括平坦化层15。其中，OLED发光器件的阳极02与源极13或漏极14电性连接，图2中仅以阳极02与漏极14电性连接为例进行示意。
需要说明的是，OLED显示装置中包括呈阵列排布的OLED发光器件，以及与每一OLED发光器件电性连接的薄膜晶体管，其中，本公开实施例中的辅助电极可以与OLED发光器件个数，也可以根据显示装置的尺寸多个OLED发光器件对应一个辅助电极，即多个OLED 发光器件与一个辅助电极连接，在此不做限定。
本公开实施例中的显示装置中的薄膜晶体管仅以底栅型的薄膜晶体管为例进行描述，但不限于薄膜晶体管仅为底栅型，还可以为顶栅型，在此不做限定。
基于同一发明思想，本公开实施例还提供了一种有机发光二极管显示面板的制作方法，参见图3，该方法包括以下步骤。
在S301，在衬底基板上形成阳极和辅助电极的图案，阳极和辅助电极相互绝缘。
在S302，通过一次构图工艺在阳极和辅助电极之上形成像素定义层的图案。其中，像素定义层具有露出阳极的像素开口区域和具有露出辅助电极的过孔，像素开口区域使得像素定义层的边缘与阳极之间呈钝角，过孔使得像素定义层的边缘与辅助电极之间呈锐角。
在S303，依次在像素定义层之上形成发光层和阴极的图案，且阴极与过孔内的辅助电极电性连接。
本公开实施例中的构图工艺可只包括光刻工艺，或，可以包括光刻工艺以及刻蚀步骤，同时还可以包括打印、喷墨等其他设置为形成预定图形的工艺；光刻工艺是指包括成膜、曝光、显影等工艺过程的利用光刻胶、掩模板、曝光机等形成图形的工艺。在实施时，可根据本公开中所形成的结构选择相应的构图工艺。
需要说明的是，本公开实施例中在形成像素定义层的图案时，可以采用一个掩膜版一次不同倾斜角度的曝光方式形成，或者可以采用一个掩膜版两次不同倾斜角度的曝光方式形成，在此不做限定。
本公开实施例提供的上述有机电致发光二极管显示面板的制作方法中，通过一次构图工艺在阳极和辅助电极之上形成像素定义层的图案，包括：在阳极和辅助电极的图案上方形成像素定义层；通过具有第一倾斜角度的光线以及具有第二倾斜角度的光线分别对像素定义层进行曝光工艺，使像素定义层形成露出所述阳极的像素开口区域以及露出辅助电极的过孔的图形，且像素开口区域使得像素定义层的边缘与阳极之间呈钝角，过孔使得像素定义层的边缘与辅助电极之间呈锐角。
在一个例子中，步骤一，在衬底基板01上形成阳极02和辅助电极03的图案，如图4a所示；步骤二，在阳极02和辅助电极03所在的膜层上方形成整层的像素定义层04，如图4b所示，其中，像素定义层的材料为负胶材料；步骤三，对像素定义层04进行第一次曝光时，将光线设置为从左上向右下的方向进行照射，如图4c所示的光线的箭头方向，其中，光线的倾斜角度可以根据实际应用进行设置，形成图4c所示的像素定义层04；步骤四，将对图4c所示的像素定义层04进行第二次曝光，且将光线设置为从右上向左下的方向进行照射，如图4d所示的光线的箭头方向，其中，光线的倾斜角度可以根据实际应用进行设置，形成图4d所示的像素定义层04，即形成像素开口区域041和过孔042的图案。
其中，在图4a-4d所示的例子中，步骤三和步骤四分别采用两次曝光的方式进行照射，但应理解，也可以通过一次曝光，且光线具有不同倾斜角度的光线进行照射。且对于负性材料的像素定义层，光线照射需要保留的像素定义层的区域。
在另一个例子中，形成像素定义层的图案的方法还可以包括：步骤一，在衬底基板01 上形成阳极02和辅助电极03的图案，如图5a所示；步骤二，在阳极02和辅助电极03所在的膜层上方形成整层的像素定义层04，如图5b所示，其中，像素定义层的材料为正性材料；步骤三，对像素定义层04进行第一次曝光时，将光线设置为从左上向右下的方向进行照射，如图5c所示的光线的箭头方向，其中，光线的倾斜角度可以根据实际应用进行设置，形成图5c所示的像素定义层04；步骤四，将对图5c所示的像素定义层04进行第二次曝光，且将光线设置为从右上向左下的方向进行照射，如图5d所示的光线的箭头方向，其中，光线的倾斜角度可以根据实际应用进行设置，形成图5d所示的像素定义层04，即形成像素开口区域041和过孔042的图案。
其中，步骤三和步骤四分别采用两次曝光的方式进行照射，也可以通过一次曝光，且光线具有不同倾斜角度的光线进行照射。且对于正性材料的像素定义层，光线照射在的像素定义层需要刻蚀掉的区域。
本公开实施例提供的上述有机电致发光二极管显示面板的制作方法中，依次在像素定义层之上形成发光层和阴极的图案，包括：在像素定义层之上形成发光层的图案；在发光层的图案之上形成阴极金属层的图案，且过孔内的阴极金属层与过孔两侧的阴极金属层不连续；在阴极金属层之上形成阴极透明导电层的图案，其中，阴极包括阴极金属层和阴极透明导电层，且过孔内的阴极透明导电层与过孔两侧的阴极透明导电层连续，阴极透明导电层填充至过孔的锐角处，使得阴极透明导电层与过孔内的辅助电极接触而电性连接。
由于过孔中锐角的存在，使得在像素定义层上形成发光层时，过孔内的发光层产生断层现象，即过孔内的发光层与过孔两侧的发光层不连续。本公开实施例中的阴极包括阴极金属层和阴极透明导电层，且为了增加阴极的透射作用，阴极金属层制作的较薄，使得在过孔处形成阴极金属层时，同样产生与发光层一样的图形，即阴极金属层在过孔内产生断层现象。为了将过孔内的辅助电极与阴极电性连接，在形成阴极透明导电层时使得阴极透明导电层填充到锐角内，使得阴极透明导电层与辅助电极直接接触，从而电性连接辅助电极和阴极透明导电层以及阴极金属层。因此，本公开实施例中提供的显示面板的制作方法中，仅增加了一次制作辅助电极的工艺，无需增加其他工艺即能解决阴极电阻较小的问题。
本公开实施例提供的上述有机电致发光二极管显示面板的制作方法中，在发光层的图案之上形成阴极金属层的图案，包括：通过蒸镀的方式在发光层的图案之上形成阴极金属层的图案。在形成厚度较薄的阴极金属层时，可采用蒸镀的方式在发光层上沉积一层阴极金属层，且在蒸镀时分子或原子以直线型的方式进行运动，从而只能形成直线型的膜层，使得阴极金属层在过孔处出现断裂的现象，辅助电极与阴极金属层不连接。
本公开实施例提供的上述有机电致发光二极管显示面板的制作方法中，在阴极金属层之上形成阴极透明导电层的图案，包括：通过溅射的方式在阴极金属层之上形成阴极透明导电层的图案。在形成厚度较厚的阴极透明导电层时，可采用溅射的方式在阴极金属层上沉积一层阴极透明导电层，使得分子或原子以散射的方式进行运动，从而在过孔的锐角内可以填充阴极透明导电层，且阴极透明导电层在过孔内与辅助电极直接接触，从而电连接辅助电极。且阴极透明导电层的膜层连续。
下面通过示例性的实施例详细描述本公开实施例提供的有机发光二极管显示面板的制作方法。
下面以正性材料的像素定义层为例，介绍本公开实施例提供的有机发光二极管显示面板的制作方法，该制作方法可包括以下步骤。
在步骤一中，在衬底基板01上形成阳极02和辅助电极03的图案，采用一个掩膜版两次曝光或者一次曝光的方式在阳极02和辅助电极03之上形成像素定义层04的图案，其中，像素定义层04包括具有露出阳极02的像素开口区域041，且像素开口区域使得像素定义层的边缘与阳极之间呈钝角，还包括具有露出辅助电极03的过孔042，且过孔使得像素定义层的边缘与辅助电极之间呈锐角，如图6a所示。
在步骤二中，在像素定义层04之上形成发光层05的图案，如图6b所示，发光层05在过孔042处形成断层。
在步骤三中，采用蒸镀的方式在发光层05之上形成阴极金属层061，如图6c所示，阴极金属层061在过孔042处形成断层，且在过孔042中的锐角处没有阴极金属层填充。
在步骤四中，采用溅射的方式在阴极金属层061之上形成阴极透明导电层062，由于溅射时分子或原子以散射方式进行运动，使得阴极透明导电层062填充到过孔042的锐角处，且直接与辅助电极03进行接触，从而电性连接辅助电极03，如图6d所示。
综上所述，本公开实施例提供的有机发光二极管，通过在显示面板中增加辅助电极，且通过在形成像素定义层时，形成露出辅助电极的过孔，且过孔使得像素定义层的边缘与辅助电极之间呈锐角，从而在形成像素定义层之上的发光层时出现断层，即过孔内的发光层与过孔两侧的发光层产生断裂，过孔处锐角的存在使得发光层不能填充到锐角内，因此在形成发光层之上的阴极时，通过过孔将辅助电极和阴极电性连接。因此，本公开实施例中通过增加辅助电极，且将辅助电极与阴极电性连接，从而减小了阴极的电阻，避免了OLED显示面板的亮度均匀性较差的问题。
显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (12)

  1. 一种有机发光二极管显示面板，其中，所述显示面板包括：
    衬底基板；
    设置在所述衬底基板之上的阳极和辅助电极，所述阳极和所述辅助电极相互绝缘；
    设置在所述阳极和辅助电极之上的像素定义层，所述像素定义层具有露出所述阳极的像素开口区域和具有露出所述辅助电极的过孔，所述像素开口区域使所述像素定义层的边缘与所述阳极之间呈钝角，所述过孔使所述像素定义层的边缘与所述辅助电极之间呈锐角；
    依次设置在所述像素定义层之上的发光层和阴极；所述阴极与设置在所述过孔内的辅助电极电性连接。
  2. 根据权利要求1所述的显示面板，其中，所述阴极包括与所述发光层接触的阴极金属层和设置在所述阴极金属层之上的阴极透明导电层；其中，
    设置在所述过孔内的所述阴极金属层与设置在所述过孔两侧的所述阴极金属层不连续，设置在所述过孔内的所述阴极透明导电层与设置在所述过孔两侧的所述阴极透明导电层连续，且所述阴极透明导电层填充至所述过孔的锐角处，使得所述阴极透明导电层与所述过孔内的辅助电极接触。
  3. 根据权利要求2所述的显示面板，其中，所述阴极透明导电层的厚度大于所述阴极金属层的厚度。
  4. 根据权利要求2所述的显示面板，其中，所述阴极金属层的厚度为1-30nm。
  5. 根据权利要求2所述的显示面板，其中，所述阴极透明导电层的厚度为10-1000nm。
  6. 根据权利要求1-5中任一项所述的显示面板，其中，所述辅助电极与所述阳极的材料相同且同层设置。
  7. 一种有机发光二极管显示装置，其中，包括权利要求1-6任一权项所述的有机发光二极管显示面板。
  8. 一种有机发光二极管显示面板的制作方法，其中，该方法包括：
    在衬底基板上形成阳极和辅助电极的图案，所述阳极和辅助电极相互绝缘；
    在所述阳极和辅助电极之上形成像素定义层的图案，其中，所述像素定义层具有露出所述阳极的像素开口区域和具有露出所述辅助电极的过孔，所述像素开口区域使所述像素定义层的边缘与所述阳极之间呈钝角，所述过孔使所述像素定义层的边缘与所述辅助电极之间呈锐角；
    依次在所述像素定义层之上形成发光层和阴极的图案，且所述阴极与所述过孔内的辅助电极电性连接。
  9. 根据权利要求8所述的方法，其中，在所述阳极和辅助电极之上形成像素定义层的图案是通过一次构图工艺形成的，并且包括：
    在所述阳极和辅助电极的图案上方形成像素定义层；
    通过具有第一倾斜角度的光线以及具有第二倾斜角度的光线分别对所述像素定义层 进行曝光工艺，使所述像素定义层形成露出所述阳极的像素开口区域以及露出所述辅助电极的过孔的图形，且所述像素开口区域使所述像素定义层的边缘与所述阳极之间呈钝角，所述过孔使所述像素定义层的边缘与所述辅助电极之间呈锐角。
  10. 根据权利要求8所述的方法，其中，依次在所述像素定义层之上形成发光层和阴极的图案，包括：
    在所述像素定义层之上形成发光层的图案；
    在所述发光层的图案之上形成阴极金属层的图案，且所述过孔内的所述阴极金属层与所述过孔两侧的所述阴极金属层不连续；
    在所述阴极金属层之上形成阴极透明导电层的图案，其中，所述阴极包括所述阴极金属层和所述阴极透明导电层，所述过孔内的所述阴极透明导电层与所述过孔两侧的所述阴极透明导电层连续，所述阴极透明导电层填充至所述过孔的锐角处，使得所述阴极透明导电层与所述过孔内的辅助电极接触。
  11. 根据权利要求10所述的方法，其中，在所述发光层的图案之上形成阴极金属层的图案，包括：
    通过蒸镀的方式在所述发光层的图案之上形成阴极金属层的图案。
  12. 根据权利要求10所述的方法，其中，在所述阴极金属层之上形成阴极透明导电层的图案，包括：
    通过溅射的方式在所述阴极金属层之上形成阴极透明导电层的图案。
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