WO2024021006A1 - 有机发光二极管显示面板及其制备方法、显示装置 - Google Patents

有机发光二极管显示面板及其制备方法、显示装置 Download PDF

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WO2024021006A1
WO2024021006A1 PCT/CN2022/108895 CN2022108895W WO2024021006A1 WO 2024021006 A1 WO2024021006 A1 WO 2024021006A1 CN 2022108895 W CN2022108895 W CN 2022108895W WO 2024021006 A1 WO2024021006 A1 WO 2024021006A1
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opening
layer
base substrate
electrode
included angle
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PCT/CN2022/108895
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English (en)
French (fr)
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盖人荣
陈善韬
宋尊庆
陈登云
杨静
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京东方科技集团股份有限公司
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Priority to PCT/CN2022/108895 priority Critical patent/WO2024021006A1/zh
Priority to CN202280002490.1A priority patent/CN117813939A/zh
Publication of WO2024021006A1 publication Critical patent/WO2024021006A1/zh

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  • Embodiments of the present disclosure relate to an organic light-emitting diode display panel, a preparation method thereof, and a display device.
  • OLED display devices have the advantages of self-illumination, wide viewing angle, high contrast, low power consumption, fast response speed, ultra-light weight, good screen rollability, and simple manufacturing process. It has become a research hotspot in the field of optoelectronic display technology.
  • an organic light-emitting diode includes a stacked lower electrode, a light-emitting layer, an organic functional layer and an upper electrode.
  • the light-emitting layer may be formed in an opening included in the pixel defining layer, and the organic functional layer may be formed on a lower electrode (eg, an anode) and an upper surface of the pixel defining layer.
  • the organic functional layer may include a hole injection layer, a hole transport layer, a hole blocking layer, an electron transport layer, an electron injection layer, etc. stacked in sequence, and the light emitting layer may be disposed between the hole transport layer and the hole blocking layer.
  • Other layer structures may be formed on the organic functional layer, such as an upper electrode (eg, cathode) and the like.
  • At least one embodiment of the present disclosure provides an organic light-emitting diode display panel, a preparation method thereof, and a display device.
  • the organic light-emitting diode display panel is configured by making the first side of the pixel definition structure adjacent to the first opening be parallel to the base substrate.
  • the first included angle between the planes of the main surfaces is less than the second included angle between the second side of the pixel definition structure adjacent to the second opening and the plane parallel to the main surface of the base substrate, so that at the same time Solve the problem of resolution reduction caused by setting auxiliary electrodes and the problem of color shift during light mixing.
  • the organic light-emitting diode display panel includes: a base substrate; a pixel defining layer provided on the base substrate; wherein the pixel defining layer includes a first an opening, a second opening and a pixel defining structure between the first opening and the second opening, the first opening having a stacked light-emitting layer and a first electrode, and the second opening not having
  • the light-emitting layer has a first included angle between a first side of the pixel definition structure adjacent to the first opening and a plane parallel to the main surface of the base substrate, and the pixel definition structure has a first included angle. There is a second included angle between the second side adjacent to the second opening and a plane parallel to the main surface of the base substrate, and the first included angle is smaller than the second included angle.
  • an auxiliary electrode electrically connected to the first electrode is provided in the second opening, and the first electrode extends from the first opening. to the second opening, and the first electrode is spaced apart from the auxiliary electrode in the second opening.
  • a metal oxide conductive layer is provided at least on a side of the first electrode located in the second opening away from the base substrate. , and the metal oxide conductive layer covers at least the side surface of the auxiliary electrode, so that the first electrode and the auxiliary electrode are electrically connected through the metal oxide conductive layer.
  • the first electrode is on a side of the light-emitting layer away from the base substrate, between the first opening and the second electrode.
  • the metal oxide conductive layer is provided on a side of the first electrode in the opening away from the base substrate, and the metal oxide conductive layer extends from the first opening to the second opening, And cover the side surface of the auxiliary electrode and the surface of the auxiliary electrode away from the base substrate.
  • a first sub-electrode is provided between the auxiliary electrode and the metal oxide conductive layer, and the first sub-electrode and the third An electrode is formed in the same process step.
  • a first organic functional layer is provided on a side of the first electrode close to the base substrate, The first organic functional layer extends from the first opening to the second opening, the first organic functional layer and the auxiliary electrode are spaced apart in the second opening, and between the auxiliary electrode and A second organic functional layer is provided on a side away from the base substrate, and the first organic functional layer and the second organic functional layer are formed in the same process step.
  • a second electrode is provided on a side of the light-emitting layer close to the substrate, and a second electrode is provided on a side of the second electrode close to the substrate.
  • a thin film transistor is provided on one side of the base substrate, a planarization layer is provided between the second electrode and the thin film transistor, and the second electrode passes through a first via structure provided in the planarization layer and The first source and drain electrodes of the thin film transistor are electrically connected.
  • the planarization layer is disposed in the second opening, and the auxiliary electrode is disposed on a side of the planarization layer away from the base substrate.
  • the thickness of the planarization layer in a direction perpendicular to the base substrate is greater than the thickness of the pixel definition layer in a direction perpendicular to the base substrate.
  • the thickness in the direction of the planarization layer has a third included angle between the side adjacent to the second opening and a plane parallel to the main surface of the base substrate, and the third included angle
  • the size is greater than the size of the second included angle.
  • the organic light-emitting diode display panel provided by at least one embodiment of the present disclosure, there is a gap between a side of the planarization layer adjacent to the second opening and a plane parallel to the main surface of the base substrate.
  • a third included angle, the size of the third included angle is equal to the size of the second included angle.
  • the orthographic projection of the side of the planarization layer adjacent to the second opening on the base substrate is farthest from the third opening.
  • the distance between a portion of the opening and the portion of the orthographic projection of the second side of the pixel defining structure on the base substrate that is farthest from the first opening is greater than 0.
  • the first side includes a first sub-side and a second sub-side that are sequentially arranged in a direction away from the base substrate, so There is a fourth included angle between the first sub-side and a plane parallel to the main surface of the base substrate, and there is a fourth included angle between the second sub-side and a plane parallel to the main surface of the base substrate.
  • a fifth included angle, and the fourth included angle is greater than the fifth included angle, and the fourth included angle is equal to the first included angle.
  • the auxiliary electrode includes a stacked titanium metal layer, an aluminum metal layer, and a titanium metal layer.
  • the orthographic projection of the aluminum metal layer on the base substrate is between the orthographic projection of the titanium metal layer on the base substrate. Inside.
  • the organic light-emitting diode display panel provided by at least one embodiment of the present disclosure, there are multiple first openings, and the light emitted by the light-emitting layer in adjacent first openings has different colors.
  • the first included angle ranges from 20° to 40°
  • the second included angle ranges from 65° to 90°. °.
  • the second opening is a transparent display area, and the pixel defining layer is not disposed in the second opening.
  • a fingerprint recognition sensor is disposed in the second opening.
  • At least one embodiment of the present disclosure further provides a display device, which includes the organic light-emitting diode display panel described in any one of the above.
  • At least one embodiment of the present disclosure also provides a method for preparing an organic light-emitting diode display panel.
  • the preparation method includes: providing a base substrate; forming a pixel defining layer on the base substrate, wherein the pixel defining layer includes a third An opening, a second opening and a pixel defining structure between the first opening and the second opening; a light-emitting layer and a first electrode are formed in the first opening in sequence; and no The light-emitting layer is formed; a first side of the pixel definition structure adjacent to the first opening has a first included angle with a plane parallel to the main surface of the base substrate, the pixel definition structure There is a second included angle between the second side adjacent to the second opening and a plane parallel to the main surface of the base substrate, and the first included angle is smaller than the second included angle.
  • the preparation method provided by at least one embodiment of the present disclosure further includes forming an auxiliary electrode electrically connected to the first electrode in the second opening.
  • forming the pixel defining layer includes using a mask to expose the pixel defining film to form the first opening, the second opening and the pixel defining layer.
  • the pixel-defining structural film layer between the first opening and the second opening, and the exposure energy of the portion of the pixel-defining structural film layer adjacent to the first opening is smaller than that of the pixel-defining structural film layer.
  • the exposure energy of the portion adjacent to the second opening is used to form a stepped pixel-defining structure precursor.
  • the preparation method provided by at least one embodiment of the present disclosure further includes performing a heat treatment on the step-shaped pixel-defining structure precursor, wherein the heat treatment includes treating the step-shaped pixel-defining structure precursor having a first temperature.
  • the body is placed in a heating device in which the temperature of the stepped pixel-defining structure precursor is raised to a second temperature.
  • forming the pixel defining layer includes using a first patterning process to form the first opening, the second opening and the first opening and the second opening.
  • the pixel defining structure film layer is between the two openings, and a second patterning process is performed on the portion of the pixel defining structure film layer adjacent to the second opening to form the pixel defining structure.
  • FIG. 1A is a schematic cross-sectional structural diagram of an organic light-emitting diode display panel provided by at least one embodiment of the present disclosure
  • FIG. 1B is a schematic cross-sectional structural diagram of yet another organic light-emitting diode display panel provided by at least one embodiment of the present disclosure
  • FIG. 1C is a schematic cross-sectional structural diagram of yet another organic light-emitting diode display panel provided by at least one embodiment of the present disclosure
  • 1D is a schematic cross-sectional structural diagram of yet another organic light-emitting diode display panel provided by at least one embodiment of the present disclosure
  • 1E is a schematic plan view of an organic light-emitting diode display panel provided by at least one embodiment of the present disclosure
  • Figure 2 is a schematic cross-sectional structural diagram of a first organic functional layer and a light-emitting layer provided by at least one embodiment of the present disclosure
  • Figure 3 is a schematic cross-sectional structural diagram of a transparent display device provided by at least one embodiment of the present disclosure
  • Figure 4 is a schematic plan view of the pixel definition structure, light-emitting elements and conductors of a transparent display device provided by at least one embodiment of the present disclosure
  • Figure 5 is a schematic cross-sectional structural diagram of an organic photoelectric sensor device with a display function provided by at least one embodiment of the present disclosure
  • Figure 6 is a schematic plan view of the organic photoelectric sensor device with display function shown in Figure 5;
  • Figure 7 is a flow chart of a method for preparing an organic light-emitting diode display panel according to at least one embodiment of the present disclosure
  • FIGS. 8A-8B are schematic diagrams of a formation process of a pixel defining layer provided by at least one embodiment of the present disclosure.
  • FIGS. 9A-9C are schematic diagrams of yet another formation process of a pixel defining layer provided by at least one embodiment of the present disclosure.
  • Figure 9D is a schematic cross-sectional structural diagram of a pixel definition layer provided by at least one embodiment of the present disclosure.
  • 10A-10B are schematic diagrams of yet another formation process of a pixel defining layer provided by at least one embodiment of the present disclosure.
  • the cathode of the top-emitting OLED display panel needs to be transparent.
  • the light transmittance and conductivity of the cathode affect the display quality of the OLED display panel. crucial factor.
  • the cathode when the cathode is made of a highly transparent single-layer indium tin oxide, indium zinc oxide or thin layer of metal, the resistance of the cathode is large, and it is easy to cause a gap in the driving voltage between the center area and the edge area of the OLED display panel. If the OLED display panel increases in size, the cathode voltage drop will increase significantly, resulting in uneven display brightness of the display panel.
  • the sheet resistance of the cathode can be reduced by adding an auxiliary electrode electrically connected to the cathode, thereby reducing the voltage drop (IR Drop) of the entire OLED display panel to reduce OLED display
  • the power consumption of the panel can thereby improve the uniformity of the display brightness of the OLED display panel.
  • the sheet resistance is also called sheet resistance, which is defined as the resistance of a square conductive thin layer in the direction of current flow, that is, sheet resistance (Sheet Resistance) is the resistance value of a conductive material per unit thickness per unit area, and its unit is ohms. per party.
  • the auxiliary electrode needs to occupy the position that originally belongs to the display area, which will reduce the resolution of the OLED display panel.
  • the inventor of the present disclosure noticed that the resolution of the OLED display panel can be improved by adjusting the slope angle of the pixel defining layer so that the slope angle of the side of the pixel defining layer away from the light-emitting layer is increased.
  • the slope angle of the pixel defining layer As the angle increases, color shift will occur during the light mixing process, that is, there is a risk of uneven light mixing, which will reduce the display quality of the OLED display panel.
  • the slope angle is too large, the coverage of the cathode will be poor, and as the temperature of the OLED display panel increases during use, the cathode will thermally expand, which will cause the resistance of the cathode at the position of the pixel definition layer with a large slope angle.
  • the slope angle of the side of the pixel defining layer close to the light-emitting layer smaller than the slope angle of the side of the pixel defining layer away from the light-emitting layer, so as to solve the problem of resolution reduction and confusion caused by the provision of the auxiliary electrode.
  • the problem of color cast is easy to occur during the lighting process.
  • At least one embodiment of the present disclosure provides an organic light-emitting diode display panel.
  • the organic light-emitting diode display panel includes: a base substrate, and a pixel defining layer provided on the base substrate.
  • the pixel defining layer includes a first opening and a second opening.
  • the organic light emitting diode display panel is configured such that the first side of the pixel defining structure adjacent to the first opening is parallel to the base substrate.
  • the first included angle between the planes of the main surfaces is less than the second included angle between the second side of the pixel definition structure adjacent to the second opening and the plane parallel to the main surface of the base substrate to solve the problem of setting The problem of reduced resolution caused by the auxiliary electrode and the problem of color shift that easily occurs during the light mixing process.
  • FIG. 1A is a schematic cross-sectional structural view of an organic light-emitting diode display panel according to at least one embodiment of the present disclosure.
  • the organic light-emitting diode display panel 100 includes: a base substrate 101 disposed on the base substrate.
  • the pixel defining layer 102 on 101, the pixel defining layer 102 includes a first opening 1021, a second opening 1022, and a pixel defining structure 1023 between the first opening 1021 and the second opening 1022, the first opening 1021 having a stacked
  • the luminescent layer 103 and the first electrode 104 are provided, the auxiliary electrode 105 electrically connected to the first electrode 104 is provided in the second opening 1022, and there is no luminescent layer in the second opening 1022.
  • the pixel definition structure 1023 is connected to the first electrode 104.
  • first included angle ⁇ between the first side 1023a adjacent to the opening 1021 and a plane parallel to the main surface of the base substrate 101, and the second side 1023b of the pixel definition structure 1023 adjacent to the second opening 1022 is parallel to
  • second included angle ⁇ between the planes of the main surface of the base substrate 101 , and the first included angle ⁇ is smaller than the second included angle ⁇ .
  • the organic light emitting diode display panel 100 makes the pixel defining structure 1023 and the first included angle ⁇
  • the first included angle ⁇ between the first side 1023a adjacent to the opening 1021 and a plane parallel to the main surface of the base substrate 101 is smaller than the second side 1023b adjacent to the second opening 1022 of the pixel defining structure 1023 and parallel to
  • the second included angle ⁇ between the plane of the main surface of the base substrate 101 is to solve the problem of reduced resolution caused by the provision of the auxiliary electrode 105 and the problem of color shift that easily occurs during the light mixing process.
  • the pixel definition structure 1023 has a bottom edge close to the base substrate 101, a top edge far away from the base substrate 101, and a side edge located between the top edge and the bottom edge, that is, the side edge is sandwiched between the bottom edge and the bottom edge. between the side and the top side, and the side includes the above-mentioned first side 1023a and the second side 1023b that are oppositely arranged.
  • the angle between two opposite sides of the pixel definition structure and a plane parallel to the main surface of the base substrate is equal to the first included angle. are approximately equal in size, that is, the angles between the two opposite sides of the pixel definition structure and the plane parallel to the main surface of the base substrate are both small angles.
  • this arrangement will reduce the performance of the organic light-emitting diode display panel. resolution.
  • the first included angle ⁇ between the first side 1023 a of the pixel definition structure 1023 adjacent to the first opening 1021 and a plane parallel to the main surface of the base substrate 101 is kept small.
  • the state can reduce the risk of color shift by increasing the second included angle ⁇ between the second side 1023b of the pixel definition structure 1023 adjacent to the second opening 1022 and a plane parallel to the main surface of the substrate substrate 101
  • the side of the pixel defining structure 1023 close to the second opening 1022 can be steepened, thereby reducing the space occupied by the pixel defining structure 1023 to improve the resolution of the organic light emitting diode display panel.
  • the first electrode 104 is a cathode
  • the first electrode 104 extends from the first opening 1021 to the second opening 1022
  • the first electrode 104 is spaced apart from the auxiliary electrode 105 in the second opening 1022, that is, In the second opening the first electrode 104 is disconnected.
  • the film of the first electrode 104 may be formed as a whole layer.
  • the material of the first electrode 104 is a conductive metal material. The thickness of the conductive metal material is very thin, which may easily lead to the final formation of the first electrode. 104 breaks.
  • the first electrode 104 is broken at a position close to the auxiliary electrode 105, so that the first electrode 104 and the auxiliary electrode 105 are spaced apart in the second opening 1022. .
  • a part of the first electrode 104 is located in the first opening 1021 and another part is located in the second opening 1022 . At least the first electrode 104 located in the second opening 1022 is away from the substrate 101
  • a metal oxide conductive layer 118 is provided on one side of the first electrode 104 and covers at least the side surface of the auxiliary electrode 105 so that the first electrode 104 and the auxiliary electrode 105 pass through the metal oxide.
  • the conductive layer 118 is electrically connected, and the auxiliary electrode 105 is electrically connected to the first electrode 104, thereby reducing the resistance of the first electrode 104.
  • the first electrode 104 is on a side of the light-emitting layer 103 away from the base substrate 101 , and on a side of the first electrode 104 in the first opening 1021 and the second opening 1022 away from the base substrate 101 .
  • a metal oxide conductive layer 118 is provided on the side, and the metal oxide conductive layer 118 extends from the first opening 1021 to the second opening 1022 and covers the side surface of the auxiliary electrode 105 .
  • the metal oxide conductive layer 118 and the surface of the auxiliary electrode 105 away from the base substrate 101 are not in direct contact, the metal oxide conductive layer 118 covers the surface of the auxiliary electrode 105 away from the base substrate 101 .
  • the side of the first electrode 104 located in the first opening 1021 away from the base substrate 101 is also provided with a metal oxide conductive layer 118.
  • the metal oxide conductive layer 118 and the first electrode 104 are connected in parallel to further reduce the impact.
  • the resistance of the first electrode 104 is reduced, thereby reducing the voltage drop of the entire organic light emitting diode display panel.
  • the metal oxide conductive layer 118 has good ductility. Even at the position of the auxiliary electrode 105 with a high height, the metal oxide conductive layer 118 is not easily broken.
  • the metal oxide conductive layer 118 is conductive.
  • the layer 118 is provided as a whole layer, extending from the first opening 1021 to the second opening 1022 .
  • the metal oxide conductive layer 118 also covers the side surface and the upper surface of the auxiliary electrode 105 .
  • the material of the metal oxide conductive layer 118 includes at least one of indium zinc oxide and indium tin oxide.
  • the embodiments of the present disclosure are not limited thereto, as long as it has good conductivity, high transparency and good ductility. .
  • a second electrode 112 is provided on the side of the light-emitting layer 103 close to the base substrate 101 , and a thin film transistor 120 is provided on a side of the second electrode 112 close to the base substrate 101 .
  • a planarization layer 113 is provided between the two electrodes 112 and the thin film transistor 120 .
  • the second electrode 112 is electrically connected to the first source and drain electrode 109 of the thin film transistor 120 through the first via structure 114 provided in the planarization layer 113 .
  • the thin film transistor in FIG. 1A is a top-gate thin film transistor as an example.
  • the thin film transistor 120 includes an active layer 106 , a gate insulating layer 107 , a gate electrode 108 , an interlayer insulating layer 111 ,
  • the first source-drain electrode 109 and the second source-drain electrode 110, the planarization layer 113 is disposed on the side of the first source-drain electrode 109 and the second source-drain electrode 110 away from the base substrate 101
  • the second electrode 112 is disposed on On the side of the planarization layer 113 away from the base substrate 101 , the second electrode 112 is electrically connected to the first source and drain electrode 109 through the first via structure 114 penetrating the planarization layer 113 .
  • the material of the gate 108 may be a combination of copper and other metals, such as copper/molybdenum (Cu/Mo), copper/titanium (Cu/Ti), copper/molybdenum-titanium alloy (Cu/MoTi), copper/ Molybdenum-tungsten alloy (Cu/MoW), copper/molybdenum-niobium alloy (Cu/MoNb), etc.;
  • the material of the gate metal layer can also be a chromium-based metal or a combination of chromium and other metals, for example, chromium/molybdenum (Cr/Mo ), chromium/titanium (Cr/Ti), chromium/molybdenum titanium alloy (Cr/MoTi), etc.
  • the gate insulating layer 107 and the interlayer insulating layer 111 can play a role in protection and insulation.
  • the materials of the gate insulating layer 107 and the interlayer insulating layer 111 include silicon nitride (SiNx), silicon oxide (SiOx), aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), acrylic resin or other suitable materials. s material.
  • the active layer 106 is made of indium gallium zinc oxide (IGZO), indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), gallium zinc oxide (GZO), carbon nanotubes, etc.
  • the material of the transparent conductive film can also be zinc oxide (ZnO), indium oxide (In 2 O 3 ), aluminum zinc oxide (AZO), etc.
  • the oxide semiconductor layer can be deposited by magnetron sputtering, and its thickness can be 30-50 nm.
  • the first source-drain electrode 109 and the second source-drain electrode 110 are made of copper-based metal.
  • Copper metal has the characteristics of low resistivity and good conductivity, so it can increase the signal transmission rate of the first source-drain electrode and the second source-drain electrode and improve the display quality.
  • the copper-based metal is a copper-based metal alloy with stable performance such as copper (Cu), copper-zinc alloy (CuZn), copper-nickel alloy (CuNi) or copper-zinc-nickel alloy (CuZnNi).
  • the second electrode 112 may be an anode
  • the corresponding first electrode 104 may be a cathode
  • the value range of the first included angle ⁇ can be 20° to 40°, and the value of the second included angle ⁇ can be The range is 65° ⁇ 90°.
  • the value of the first included angle may be 20°, 25°, 30°, 35°, or 40°.
  • the value of the second included angle ⁇ may be 65°, 70°, 75°, 85° or 90°, which is not limited in the embodiments of the present disclosure.
  • the third included angle ⁇ between the side of the planarization layer 113 adjacent to the second opening 1022 and a plane parallel to the main surface of the base substrate 101 .
  • the third included angle ⁇ The value range of This can prevent the resolution of the display panel from being reduced due to the obstruction of the planarization layer 113 .
  • the pixel defining structure 1023 is retracted relative to the planarization layer 113 to the side close to the first opening 1021, thereby forming a step at the interface between the pixel defining structure 1023 and the planarization layer 113, so that the The first electrode 104 is not easily broken at the interface between the pixel definition structure 1023 and the planarization layer 113, thereby reducing the risk of circuit breakage.
  • the embodiment of the present disclosure is not limited to this, and the third included angle ⁇ may also be larger than the second included angle ⁇ .
  • the part of the orthographic projection of the side of the planarization layer 113 adjacent to the second opening 1022 on the substrate 101 that is farthest from the first opening 1021 is different from the second part of the pixel definition structure 1023 .
  • the distance between the parts of the orthographic projection of the side edges 1023b on the base substrate 101 that are farthest from the first opening 1021 is greater than 0, that is, the pixel definition structure 1023 moves toward the side closer to the first opening 1021 relative to the planarization layer 113
  • the pixel definition structure 1023 is retracted so that a step is formed at the interface between the pixel definition structure 1023 and the planarization layer 113 .
  • the main surface of the base substrate 101 refers to the portion of the base substrate 101 provided with the light-emitting layer 103, the gate electrode 108, the second source-drain electrode 110, the first source-drain electrode 109, the first electrode 104 and the second The surface of the electrode 112 and other structures.
  • the thickness of the planarization layer 113 in the direction perpendicular to the base substrate 101 is greater than the thickness of the pixel definition layer 102 in the direction perpendicular to the base substrate 101 , and the thickness of the planarization layer 113 is the same as the thickness of the planarization layer 113 in the direction perpendicular to the base substrate 101 .
  • the size of the third included angle ⁇ can be greater than the size of the second included angle ⁇ .
  • the organic light-emitting diode display panel 100 further includes a first organic functional layer 115 extending from the first opening 1021 to the second opening 1022 , and in the second opening 1022
  • the first organic functional layer 115 may have a single-layer structure or a multi-layer stacked structure. What is shown in FIG. 1A is that the first organic functional layer 115 is disposed on the side of the light-emitting layer 103 close to the base substrate 101 .
  • the first organic functional layer 115 may be one of a hole injection layer and a hole transport layer. , it may also be a stacked structure of a hole injection layer and a hole transport layer, and the hole injection layer is on the side of the hole transport layer close to the base substrate 101 .
  • FIG. 1A only shows that the first organic functional layer 115 is disposed on the side of the light-emitting layer 103 close to the base substrate 101
  • the first organic functional layer 115 may include the light-emitting layer 103
  • the first part 130 and the second part 131 are spaced apart and stacked with the light emitting layer 103 .
  • FIG. 2 is a schematic cross-sectional structural diagram of a first organic functional layer and a luminescent layer according to at least one embodiment of the present disclosure. As shown in FIG.
  • the first part 130 of the first organic functional layer 115 is disposed in the luminescent layer 103
  • the second portion 131 of the first organic functional layer 115 is disposed on a side of the light-emitting layer 103 that is close to the base substrate 101 and is located on a side of the light-emitting layer 103 that is away from the base substrate 101 .
  • the first part 130 is a stacked structure of a hole injection layer 1301 and a hole transport layer 1302. Of course, the embodiments of the present disclosure are not limited thereto.
  • the first part 130 may also be a hole injection layer 1301 and a hole transport layer 1302. one of the.
  • the second part 131 is a stacked structure of a hole blocking layer 1311, an electron transport layer 1312 and an electron injection layer 1313, and the hole blocking layer 1311 is in direct contact with the light emitting layer 103.
  • the electron injection layer 1313 is on the electron transport layer 1312. The side away from the base substrate 101 .
  • FIG. 1A only shows the first organic functional layer 115 on the side of the light-emitting layer 103 close to the base substrate 101
  • the first organic functional layer 115 has the stacked structure shown in FIG. 2
  • the The positional relationship between the first organic functional layer 115 and the light-emitting layer 103 can be the structure shown in FIG. 2.
  • the first organic functional layer 115 includes an electron injection layer 1313, an electron transport layer 1312, and a light-emitting layer 103.
  • the hole transport layer 1302 and the hole injection layer 1301 are formed by full-surface evaporation.
  • the above-mentioned electron injection layer 1313, the electron transport layer 1312, the light-emitting layer 103, the hole transport layer 1302 and the hole injection layer 1301 are all formed from the first
  • An opening 1021 extends to a second opening 1022 and is broken in the second opening 1022 to be spaced apart from the auxiliary electrode 105 on a plane parallel to the main surface of the base substrate 101 .
  • a first sub-electrode 116 is provided between the auxiliary electrode 105 and the metal oxide conductive layer 118 .
  • the first sub-electrode 116 and the first electrode 104 are formed in the same layer in the same process step.
  • a whole layer of first electrode film is formed by magnetron sputtering.
  • the part of the first electrode film extending from the first opening 1021 to the second opening 1022 serves as the first electrode 104.
  • the first electrode film breaks in the second opening 1022.
  • the portion remaining on the auxiliary electrode 105 serves as the first sub-electrode 116 .
  • the first sub-electrode 116 and the first electrode 104 are electrically connected to the metal oxide conductive layer 118 respectively, the auxiliary electrode 105 is electrically connected to the metal oxide conductive layer 118, and the auxiliary electrode 105 and the first sub-electrode 116 form a stacked structure and assist The electrode 105 is in direct contact with the first sub-electrode 116. This design further reduces the resistance of the first sub-electrode 116 and the first electrode 104.
  • a second organic functional layer 117 is provided on the side of the auxiliary electrode 105 away from the base substrate 101 .
  • the first organic functional layer 115 and the second organic functional layer 117 are formed simultaneously in the same process step. layer formation.
  • the corresponding electron injection layer, electron transport layer, light emitting layer, hole transport layer and hole remain between the auxiliary electrode 105 and the metal oxide conductive layer 118.
  • Injection layer this part of the electron injection layer, electron transport layer, light emitting layer, hole transport layer and hole injection layer constitutes the above-mentioned second organic functional layer 117.
  • the first sub-electrode 116 and the first electrode 104 are formed in the same layer in the same process step, and the first organic functional layer 115 and the second organic functional layer 117 are formed in the same process.
  • the "same layer formation in the same process step" in “same layer formation in steps” refers to using the same film formation process to form a film layer with a specific pattern, and then using the same mask to form the corresponding layer structure through a patterning process.
  • the sequential patterning process may include multiple exposure, development and etching processes, and the specific graphics formed on the same layer may be continuous or discontinuous. These specific graphics may also be at different heights or Available in different thicknesses.
  • methods of forming the above-mentioned electron injection layer 1313, electron transport layer 1312, light emitting layer 103, hole transport layer 1302 and hole injection layer 1301 include deposition, lithographic, inkjet printing, and thermal transfer. method and evaporation method.
  • the deposition method includes using a shadow mask to shield and vacuum deposit organic materials to form the first organic functional layer and the second organic functional layer.
  • the lithography method includes depositing an organic material, and then patterning the organic material using a photoresist to form the first organic functional layer and the second organic functional layer. This lithography method is suitable for forming high-resolution patterns.
  • the inkjet printing method can directly form a pattern on the organic film layer.
  • the operation of inkjet printing method is relatively simple.
  • the thermal transfer method can use, for example, laser-induced thermal transfer to form the first organic functional layer and the second organic functional layer. This method can form high-resolution patterns and thin films with uniform thickness, and can also be mass-produced.
  • the auxiliary electrode 105 includes a titanium metal layer, an aluminum metal layer and a titanium metal layer arranged in a stack, that is, the aluminum metal layer is sandwiched between two titanium metal layers to form an "I" shape. structure, thereby improving the stability of the auxiliary electrode 105.
  • the orthographic projection of the aluminum metal layer on the base substrate 101 is within the orthographic projection of the titanium metal layer on the base substrate 101 .
  • first openings 1021 there are multiple first openings 1021 , and the colors of light emitted by the light-emitting layer 103 in adjacent first openings 1021 are different.
  • the color of the light emitted by the light-emitting layer 103 in one first opening 1021 is red
  • the colors of the light emitted by the light-emitting layer 103 in two first openings 1021 adjacent to the first opening 1021 are green and green respectively. Blue, so that the light emitted by the light-emitting layers 103 in the three adjacent first openings 1021 can be mixed to form white light.
  • the overall structure shown in FIG. 1A can be used as a repeating unit.
  • FIG. 1B is a schematic cross-sectional structural diagram of yet another organic light-emitting diode display panel according to at least one embodiment of the present disclosure.
  • the pixel definition layer 102 and the planarization layer 113 may be made of the same material, for example, they may be both. It is an inorganic insulating material, such as silicon nitride, silicon oxide, etc.
  • the pixel defining layer 102 and the planarizing layer 113 may be formed in the same process step. Therefore, the pixel defining layer 102 and the planarizing layer 113 may share one side.
  • the second side 1023b of the pixel defining structure 1023 and the side of the planarization layer 113 close to the second opening 1022 are on the same plane. This type of design can reduce process steps, thereby reducing production costs.
  • the second side 1023b of the pixel definition structure 1023 adjacent to the second opening 1022 has a second included angle ⁇ with a plane parallel to the main surface of the base substrate 101 .
  • the planarization layer There is a third included angle ⁇ between the side of 113 adjacent to the second opening 1022 and a plane parallel to the main surface of the base substrate 101.
  • the size of the third included angle ⁇ is equal to the size of the second included angle ⁇ .
  • the size of the third included angle ⁇ is equal to the size of the second included angle ⁇ .
  • the value range of the second included angle ⁇ and the third included angle ⁇ may be 65° to 90°.
  • FIG. 1C is a schematic cross-sectional structural diagram of yet another organic light-emitting diode display panel provided by at least one embodiment of the present disclosure.
  • a planarization layer 113 is provided in the second opening 1022, and the auxiliary electrode 105 is provided On the side of the planarization layer 113 away from the base substrate 101, for example, the material of the auxiliary electrode 105 may include a metal oxide conductive layer, a silver conductive layer and a metal oxide conductive layer stacked in sequence, for example, ITO/Ag/ ITO laminated structure.
  • the second side 1023b of the pixel definition structure 1023 adjacent to the second opening 1022 has a second included angle ⁇ with a plane parallel to the main surface of the base substrate 101 .
  • the planarization layer There is a third included angle ⁇ between the side of 113 adjacent to the second opening 1022 and a plane parallel to the main surface of the base substrate 101, and the size of the third included angle ⁇ is equal to the size of the second included angle ⁇ , or the The size of the third included angle ⁇ is greater than the size of the second included angle ⁇ .
  • FIG. 1D is a schematic cross-sectional structural diagram of another organic light-emitting diode display panel provided by at least one embodiment of the present disclosure.
  • the planarization layer 113 is formed as a whole layer, and the thickness of the planarization layer 113 is uniform. There is no need to perform a patterning process on the planarization layer 113 to reduce one process step.
  • FIG. 1E is a schematic plan view of an organic light-emitting diode display panel provided by at least one embodiment of the present disclosure.
  • FIG. 1E shows the arrangement order of red sub-pixels R, green sub-pixels G and blue sub-pixels B. , showing the first opening 1021 and the second opening 1022 around each sub-pixel, the first side 1023a of the pixel defining structure 1023 adjacent to the first opening 1022, and the first side 1023a of the pixel defining structure 1023 adjacent to the second opening 1022.
  • the adjacent second side 1023b other structures of the organic light-emitting diode display panel can be referred to the relevant descriptions above. I won’t go into details here.
  • FIG. 1E shows two green sub-pixels G, one red sub-pixel R and one blue sub-pixel B.
  • the two green sub-pixels G are connected with respect to the center of the red sub-pixel R and the center of the blue sub-pixel B.
  • the straight line is axially symmetrical.
  • the second opening 1022 is a transparent display area, and no pixel defining layer is provided in the second opening 1022.
  • the second opening 1022 is a transparent display area, and no pixel defining layer is provided in the second opening 1022.
  • the second opening 1022 may also be provided with a fingerprint recognition sensor.
  • a fingerprint recognition sensor please refer to the relevant description of FIG. 5 below.
  • At least one embodiment of the present disclosure also provides a display device that includes the organic light-emitting diode display panel in any of the above embodiments.
  • the display device includes, for example, a tablet computer, a smart phone, a head-mounted display, a car navigation unit, Cameras, central information displays (CID) provided in vehicles, watch-type electronic devices or other wearable devices, personal digital assistants (PDA), portable multimedia players (PMP) and game consoles, and small and medium-sized electronic devices such as televisions, External billboards, monitors, home appliances including display screens, medium and large electronic devices for personal computers and laptops, transparent display devices, and organic photoelectric sensor devices with display functions.
  • the electronic device as described above may represent a mere example for applying the display device, and therefore those of ordinary skill in the art may recognize that the display panel may also be applied to any other device without departing from the spirit and scope of the present disclosure.
  • Display function electronic device may represent a mere example for applying the display device, and therefore those of ordinary skill in the art may recognize that the
  • FIG. 3 is a schematic cross-sectional structural diagram of a transparent display device provided by at least one embodiment of the present disclosure.
  • the first source drain electrode 307 and the second source drain electrode 311 are disposed on the side of the interlayer insulating layer 310 away from the base substrate 301 , and the first source drain electrode 307 and the second source drain electrode 311 are disposed opposite to each other.
  • the side of the second source and drain electrode 311 away from the base substrate 301 is provided with a planarization layer 316 and a pixel defining structure 312 in sequence.
  • One opening 317 and second openings 319 are provided alternately, and the stacked second electrode 313, organic functional layer 314, light-emitting layer 315 and first electrode 318 are provided in the first opening 317.
  • the transparent display device 300 includes a display area and a light-transmitting area.
  • the first opening 317 corresponds to the display area
  • the second opening 319 corresponds to the light-transmitting area, that is, the transparent display area.
  • No pixel defining layer is provided in the second opening 319 .
  • the transparent display device 300 defines a structure by the pixels
  • the first included angle ⁇ between the first side of 312 adjacent to the first opening 317 and a plane parallel to the main surface of the base substrate 301 is smaller than the second side of the pixel defining structure 312 adjacent to the second opening 319
  • the second included angle ⁇ between the side and the plane parallel to the main surface of the base substrate 301 is to increase the area of the light-transmitting area without reducing the area of the display area.
  • the value range of the first included angle ⁇ can be 20° to 40°, and the value of the second included angle ⁇ can be The range is 65° ⁇ 90°.
  • the value of the first included angle ⁇ may be 20°, 25°, 30°, 35°, or 40°.
  • the value of the second included angle ⁇ may be 65°, 70°, 75°, 85° or 90°, which is not limited in the embodiments of the present disclosure.
  • the third included angle ⁇ can range from 65° to 90°, and the third included angle ⁇ is equal to the second included angle ⁇ , so that the planarization layer 316 does not reduce the duty ratio of the light-transmitting area.
  • the pixel definition structure 312 is retracted relative to the planarization layer 316 toward the side close to the first opening 317, thereby forming a step at the interface between the pixel definition structure 312 and the planarization layer 316, so that the The first electrode 318 is not easily broken at the interface between the pixel definition structure 312 and the planarization layer 316, thereby reducing the risk of circuit breakage.
  • a transparent display device requires that the duty ratio of the display area be as small as possible and that of the non-display area be as large as possible.
  • the transmittance of the planarization layer 316 and the pixel definition structure 312 is about 80%, which can be significantly improved by arranging the planarization layer 316 and the pixel definition structure 312 in the non-display area (light-transmitting area) to have a large angle.
  • the space ratio of the light-transmitting area can improve the transmittance of light. Through comparison, it was found that when the area of the non-display area (light-transmitting area) increases from 32.57% to 41.47%, the light transmittance can be increased by 27%.
  • the pixel defining structure 312 will also block the light to a certain extent, thereby reducing the area of the light transmitting area.
  • the second included angle ⁇ between the second side adjacent to the two openings 319 and the plane parallel to the main surface of the base substrate 301 becomes larger, thereby increasing the area of the light-transmitting area to increase the occupancy of the light-transmitting area.
  • the included angle ⁇ small can reduce the risk of color shift in the display area, thereby improving the quality of the transparent display device.
  • FIG. 4 is a schematic plan view of the pixel defining structure, light-emitting elements and conductors of a transparent display device provided by at least one embodiment of the present disclosure.
  • the area surrounded by four pixel defining structures 312 and conductors 313 is The light-transmitting area 320, where the luminescent layer is located, is the display area.
  • each pixel defining structure 312 corresponds to three light-emitting units 231, and the three light-emitting units 231 include a first color light-emitting unit 231a, a second color light-emitting unit 231b, and a third color light-emitting unit 231c.
  • the first color light emitting unit 231a, the second color light emitting unit 231b and the third color light emitting unit 231c may be a red light emitting unit, a green light emitting unit and a blue light emitting unit respectively.
  • the elliptical dotted box in FIG. 4 marks the position corresponding to the second included angle ⁇ . At this position, the position of the lower right corner of the pixel defining structure 312 at the upper left corner is in a direction away from the center of the light-transmitting area. It is retracted, thereby increasing the area of the light-transmitting area.
  • the pixel defining structures 312 at the upper right corner, lower left corner, and lower right corner are all designed to shrink in a direction away from the center of the corresponding light-transmitting area, so that the areas of the corresponding light-transmitting areas are increased. Therefore, the space ratio of the light-transmitting area of the transparent display device is improved as a whole.
  • Figure 5 is a schematic cross-sectional structural diagram of an organic photoelectric sensor device with a display function provided by at least one embodiment of the present disclosure.
  • a buffer layer 402 is provided on the base substrate 401, and the buffer layer 402
  • a first gate electrode 403, a first gate insulating layer 404, a first active layer 405, and a first source-drain electrode 408 and a second source-drain electrode 409 arranged in the same layer are sequentially provided thereon.
  • a second gate electrode 424 arranged in the same layer as the first gate electrode 403 is also provided on the buffer layer 402.
  • a second active gate electrode 424 arranged in the same layer as the first active layer 405 is also provided on the first gate insulating layer 404.
  • a second insulating layer 407 is provided on the side of the second active layer 406 away from the base substrate 401, between the first active layer 405 and the first source-drain electrode 408/second source-drain electrode 409 The second insulating layer 407 is also provided.
  • a third source drain electrode is provided on the same layer as the first source drain electrode 408/second source drain electrode 409.
  • the electrode 410 and the fourth source-drain electrode 423 are also provided on the side of the first source-drain electrode 408/second source-drain electrode 409 and the third source-drain electrode 410/fourth source-drain electrode 423 away from the base substrate 401.
  • the passivation layer 411 is also provided with a planarization layer 412 on the side of the passivation layer 411 away from the base substrate 401.
  • a first electrode arranged on the same layer is provided on the side of the planarization layer 412 away from the base substrate 401. 413 and the third electrode 414.
  • the first electrode 413 is electrically connected to the second source and drain electrode 409 through a second via hole structure penetrating the passivation layer 411 and the planarization layer 412
  • the third electrode 414 is electrically connected to the second source and drain electrode 409 through a third via penetrating the passivation layer 411 and the planarization layer 412 .
  • the hole structure is electrically connected to the third source and drain electrode 410 .
  • a pixel defining layer 415 is provided on the side of the first electrode 413 and the third electrode 414 away from the base substrate 401.
  • the pixel defining layer 415 includes a first opening 415a, a second opening 415b and a gap between the first opening 415a and the second opening.
  • the pixels between openings 415b define structure 415c.
  • the first opening 415a has a stacked organic functional layer 422, a light-emitting layer 418 and a first electrode 421.
  • the second opening 415b has an organic functional layer 422, a photosensitive layer 417 and a first electrode 421.
  • the light sensing layer 417 and the first electrode 421 constitute a fingerprint recognition sensor.
  • the organic functional layer 422 and the first electrode 421 can be formed as a whole layer.
  • An insulating layer 416 is provided on a side of the first electrode 421 away from the base substrate 401 .
  • a light passage hole 419 is provided on a side of the insulating layer 416 away from the base substrate 401 .
  • a light passage hole 419 is provided on a side of the light passage hole 419 away from the base substrate.
  • a cover 420 is provided on one side of 401, and touch electrodes are provided in the cover 420.
  • the pixel defining structure 415c has a first included angle ⁇ between the first side adjacent to the first opening 415a and a plane parallel to the main surface of the base substrate 401 .
  • the pixel defining structure There is a second included angle ⁇ between the second side of 415c adjacent to the second opening 415b and a plane parallel to the main surface of the base substrate 401, and the first included angle ⁇ is smaller than the second included angle ⁇ .
  • the organic photosensor device 400 with a display function is configured by making the first included angle ⁇ between the first side of the pixel definition structure 415c adjacent to the first opening 415a and a plane parallel to the main surface of the base substrate 401 smaller than the pixel definition.
  • the first side of the pixel defining structure 415c adjacent to the first opening 415a and the plane parallel to the main surface of the substrate substrate 401 can also be increased. Keeping the included angle ⁇ small can reduce the risk of color cast during the light mixing process.
  • the angle between two opposite sides of the pixel-defining structure and a plane parallel to the main surface of the base substrate is equal to the size of the angle.
  • the angles are approximately equal in size, that is, the angles between the two opposite sides of the pixel-defining structure and the plane parallel to the main surface of the base substrate are both small angles. This arrangement will increase the area of the sensing device. to increase the amount of light signal.
  • Figure 6 is a schematic plan view of the organic photoelectric sensor device with display function shown in Figure 5.
  • a pixel unit includes a red sub-pixel (R), a blue sub-pixel (B) and Two green sub-pixels (G) are taken as an example for illustration, that is, the GGRB pixel arrangement is taken as an example.
  • Each pixel unit is equipped with a light-sensing element S including a light-sensing layer.
  • the embodiments of the present disclosure are not limited to this, and may also be set to other sub-pixel arrangements.
  • a light sensing element S with a size of 180 ⁇ m*2 is set, which has a display function.
  • the value of the aperture ratio of the organic photosensitive device can be reduced from 33.9% to 22.97%. It should be noted that setting the light sensing element S will cause the aperture ratio of the entire organic photosensitive device with display function to be reduced.
  • the pixel defining structure 415c The second included angle ⁇ between the second side adjacent to the second opening 415b and the plane parallel to the main surface of the base substrate 401 increases, and the opening area occupied by the photosensitive element S can be reduced, so that the opening area occupied by the photosensitive element S can be reduced. Compensate the opening ratio to a certain extent.
  • FIG. 7 is a flow chart of a method of preparing an organic light-emitting diode display panel provided by at least one embodiment of the present disclosure. As shown in FIG. 7 As shown, the preparation method includes the following steps.
  • Step S11 Provide a base substrate.
  • Step S12 Form a pixel defining layer on the base substrate, wherein the pixel defining layer includes a first opening, a second opening, and a pixel defining structure between the first opening and the second opening.
  • Step S13 sequentially forming a light-emitting layer and a first electrode in the first opening, forming an auxiliary electrode electrically connected to the first electrode in the second opening, and the first side of the pixel defining structure adjacent to the first opening is parallel to There is a first included angle between the planes of the main surface of the base substrate, and a second included angle between the second side of the pixel definition structure adjacent to the second opening and a plane parallel to the main surface of the base substrate, and The first included angle is smaller than the second included angle.
  • a photolithography process can be used to apply different exposure amounts to different positions of the pixel defining layer to form the first opening and the second opening in the pixel defining layer, and to make the pixel defining structure have different sizes. Angle.
  • FIGS. 8A-8B are schematic diagrams of a forming process of a pixel defining layer according to at least one embodiment of the present disclosure.
  • forming the pixel defining layer 102 includes: using a mask 121 to block the pixel defining film 122 Perform exposure processing.
  • FIG. 8B after the exposure process shown in FIG. 8A is completed, the first opening 1021 , the second opening 1022 and the pixel defining structure film layer 123 between the first opening 1021 and the second opening 1022 are formed.
  • FIG. 8A shows that the first opening 1021 , the second opening 1022 and the pixel defining structure film layer 123 between the first opening 1021 and the second opening 1022 are formed.
  • the exposure energy for the portion of the pixel definition structure film layer 123 adjacent to the first opening 1021 is smaller than the exposure energy for the portion of the pixel definition structure film layer 123 adjacent to the second opening 1022 to form a stepped pixel definition structure.
  • Body 124 the exposure energy for the portion of the pixel-defining structure film layer 123 adjacent to the first opening 1021 is half of the exposure energy for the portion of the pixel-defining structure film layer 123 adjacent to the second opening 1022 .
  • the exposure amount of the portion of the pixel-defining structure film layer 123 adjacent to the first opening 1021 is 50%
  • the exposure amount of the portion of the pixel-defining structure film layer 123 adjacent to the second opening 1022 is 100%.
  • Exposure For example.
  • the exposure energy can be changed by setting different slit diffraction.
  • the method of patterning using a photolithography process is a process of using a mask to block the photolithography.
  • the one-time patterning process includes the following steps: coating a photoresist on a pixel-defining film; exposing and developing the photoresist to form a photoresist fully retained area, a photoresist semi-retained area, and a photoresist removed area.
  • the fully reserved area of the photoresist corresponds to the platform with a larger thickness in the step-shaped precursor of the pixel defining structure
  • the semi-reserved area of the photoresist corresponds to the platform with a smaller thickness in the step-shaped precursor of the pixel defining structure.
  • the photoresist The removed area is an area outside the photoresist fully retained area and the photoresist semi-retained area, corresponding to the first opening and the second opening.
  • the pixel defining structure precursor 124 can be directly used as the pixel defining structure 1023.
  • the pixel defining structure 1023 has a step-like structure.
  • the pixel defining structure 1023 with the step-like structure has a directly connected first platform. and a second platform.
  • the height of the first platform is lower than the height of the second platform.
  • the maximum thickness of the first platform where the first included angle ⁇ of the pixel defining structure 1023 is smaller than the second included angle ⁇ of the pixel defining structure 1023 is located on the second platform.
  • the maximum thickness of the second platform The average thickness of the pixel defining structure 1023 at the sharp corner position corresponding to the first included angle ⁇ is smaller than the average thickness of the pixel defining structure 1023 at the sharp corner position corresponding to the second included angle ⁇ .
  • the height of the first platform of the pixel defining structure 1023 refers to the position of the first platform farthest away from the main surface of the base substrate 101 and the base substrate 101 in a direction perpendicular to the main surface of the base substrate 101
  • the distance between the main surfaces of the pixel definition structure 1023; the height of the second platform of the pixel definition structure 1023 refers to the position of the second platform farthest away from the main surface of the base substrate 101 and the substrate in the direction perpendicular to the main surface of the base substrate 101. The distance between the main surfaces of the base substrate 101.
  • the maximum thickness of the first platform where the first included angle ⁇ of the pixel defining structure 1023 is located is the maximum distance between the surface of the first platform away from the base substrate 101 and the surface of the first platform close to the base substrate 101; the pixel The maximum thickness of the second platform where the second angle ⁇ defining the structure 1023 is the maximum distance between the surface of the second platform away from the base substrate 101 and the surface of the second platform close to the base substrate 101 .
  • the average thickness of the pixel defining structure 1023 corresponding to the sharp corner position of the first included angle ⁇ is the average of the distance between the hypotenuse of the first included angle ⁇ and the surface of the first platform close to the base substrate 101;
  • the average thickness of the pixel defining structure 1023 corresponding to the sharp corner position of the second included angle ⁇ is the average value of the distance between the hypotenuse of the second included angle ⁇ and the surface of the second platform close to the base substrate 101 .
  • FIGS. 9A-9C are schematic diagrams of yet another formation process of a pixel definition layer provided by at least one embodiment of the present disclosure.
  • the preparation method includes: using a mask plate 121 to shield the pixel definition film 122 . Exposure processing.
  • FIG. 9B after the exposure process shown in FIG.
  • the first opening 1021 , the second opening 1022 and the pixel defining structure film layer 123 between the first opening 1021 and the second opening 1022 are formed, and the The exposure energy of the portion of the pixel definition structure film layer 123 adjacent to the first opening 1021 is less than the exposure energy of the portion of the pixel definition structure film layer 123 adjacent to the second opening 1022 to form the stepped pixel definition structure precursor 124 .
  • the exposure energy for the portion of the pixel-defining structure film layer 123 adjacent to the first opening 1021 is half of the exposure energy for the portion of the pixel-defining structure film layer 123 adjacent to the second opening 1022 .
  • the exposure amount of the portion of the pixel-defining structure film layer 123 adjacent to the first opening 1021 is 50%, and the exposure amount of the portion of the pixel-defining structure film layer 123 adjacent to the second opening 1022 is 100%. Exposure.
  • the step-shaped pixel defining structure precursor 124 is subjected to heat treatment.
  • the heat treatment includes placing the step-shaped pixel defining structure precursor 124 having a first temperature in a heating device, and placing the step-shaped pixel defining structure precursor 124 in the heating device.
  • the temperature of the pixel defining structure precursor 124 is increased to a second temperature.
  • the pixel defining structure precursor 124 is in a flowing state and undergoes self-leveling to form a non-stepped pixel defining structure.
  • the first side 1023a includes a first sub-side 1023a-1 and a second sub-side 1023a-2 that are sequentially arranged in a direction away from the base substrate 101.
  • the first sub-side There is a fourth included angle ⁇ 1 between 1023a-1 and the plane parallel to the main surface of the base substrate 101, and there is a fifth included angle ⁇ 1 between the second sub-side 1023a-2 and the plane parallel to the main surface of the base substrate 101.
  • Angle ⁇ 2, and the fourth included angle ⁇ 1 is smaller than the fifth included angle ⁇ 2, and the fourth included angle ⁇ 1 is equal to the first included angle ⁇ .
  • This design is conducive to light emitting from the side of the first side 1023a, thereby avoiding large Depends on the role.
  • FIG. 9D is a schematic cross-sectional structural diagram of a pixel definition layer provided by at least one embodiment of the present disclosure.
  • the first side 1023a includes first sub-sections sequentially arranged in a direction away from the base substrate 101.
  • the side 1023a-1 and the second sub-side 1023a-2 have a fourth included angle ⁇ 1 between the first sub-side 1023a-1 and a plane parallel to the main surface of the base substrate 101, and the second sub-side There is a fifth included angle ⁇ 2 between 1023a-2 and a plane parallel to the main surface of the base substrate 101, and the fourth included angle ⁇ 1 is smaller than the fifth included angle ⁇ 2, and the fifth included angle ⁇ 2 is equal to the first included angle ⁇ , this design is also conducive to light emitting from the side of the first side 1023a, thereby avoiding large viewing angle deviation.
  • the heating equipment may be a device with a programmed temperature rise such as an oven, or a device with a heating function such as a muffle furnace, which is not limited in the embodiments of the present disclosure.
  • FIGS. 10A-10B are schematic diagrams of another formation process of a pixel definition layer provided by at least one embodiment of the present disclosure.
  • forming the pixel definition layer 102 includes using a first patterning process to form a first opening 1021, The second opening 1022 and the pixel defining structure film layer 123 formed between the first opening 1021 and the second opening 1022 .
  • a second patterning process is performed on the portion of the pixel defining structure film layer 123 adjacent to the second opening 1022 to form the pixel defining structure 1023 . That is, in this example, two patterning processes are required to form the pixel defining structure. Finish.
  • both the first patterning process and the second patterning process include a photolithography process using a mask.
  • the one-time patterning process includes the following steps: coating the pixel defining film with photoresist; exposing and developing the photoresist to form a photoresist retention area and a photoresist removal area; and using an etching process to remove the photoresist.
  • the pixel defining film in the resist removal area is peeled off, and the photoresist in the photoresist remaining area is peeled off to form the first opening, the second opening and the pixel defining structure film layer between the first opening and the second opening.
  • the photoresist film can be coated by spin coating, blade coating or roller coating.
  • inorganic layers can be formed on the planarization layer and the pixel definition layer as a hard template to pattern areas with small angles.
  • a hard template is better than photolithography.
  • Glue and hard template have a higher selectivity for organic material side etching, which is more conducive to achieving large angles. It has been verified that when using a hard template, the large angle can reach 90°, or even greater than 90°.
  • laser irradiation can also be used to remove the planarization layer and pixel definition layer in the large-angle area, with the main surface of the substrate facing downward and the laser source located below the substrate. , using a template with openings to remove the planarization layer and pixel definition layer in large-angle areas that require laser irradiation.
  • the laser irradiation removes the planarization layer and the pixel definition layer to achieve a large angle.
  • the large angle can range from 69° to 90°.
  • the organic light-emitting diode display panel, its preparation method and the display device provided by at least one embodiment of the present disclosure have at least one of the following beneficial technical effects:
  • the organic light-emitting diode display panel provided by at least one embodiment of the present disclosure has a first side between the first side of the pixel definition structure adjacent to the first opening and a plane parallel to the main surface of the base substrate.
  • the included angle is smaller than the second included angle between the second side of the pixel definition structure adjacent to the second opening and a plane parallel to the main surface of the base substrate, so as to simultaneously solve the problem of resolution reduction caused by disposing the auxiliary electrode. Problems and color casts during light mixing.
  • the transparent display device provided by at least one embodiment of the present disclosure has a second included angle between the second side of the pixel definition structure adjacent to the second opening and a plane parallel to the main surface of the base substrate. becomes larger, thereby increasing the area of the light-transmitting region to increase the space ratio of the light-transmitting region, so that the transmittance of the entire transparent display device increases, and the first side of the pixel-defining structure adjacent to the first opening and Keeping the first angle between planes parallel to the main surface of the base substrate small can reduce the risk of color shift in the display area, thereby improving the quality of the transparent display device.
  • the organic photoelectric sensor device with a display function provided by at least one embodiment of the present disclosure is configured such that there is a gap between the first side of the pixel definition structure adjacent to the first opening and a plane parallel to the main surface of the base substrate.
  • the first included angle is smaller than the second included angle between the second side of the pixel definition structure adjacent to the second opening and a plane parallel to the main surface of the base substrate, so as to avoid reducing the area of the display area.
  • the area of the sensing device can be increased to increase the amount of light signal, and a third gap can also be provided between the first side of the pixel definition structure adjacent to the first opening and a plane parallel to the main surface of the base substrate. Keeping the angle small can reduce the risk of color cast during light mixing.

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Abstract

本公开至少一实施例提供一种有机发光二极管显示面板及其制备方法和显示装置，该有机发光二极管显示面板(100)包括：衬底基板(101)；设置在衬底基板(101)上的像素界定层(102)；像素界定层(102)包括第一开口(1021)、第二开口(1022)和在第一开口(1021)和第二开口(1022)之间的像素界定结构(1023)，第一开口(1021)中具有层叠设置的发光层(103)和第一电极(104)，第二开口(1022)中不具有发光层；像素界定结构(1023)的与第一开口(1022)邻接的第一侧边(1023a)与平行于衬底基板(101)的主表面的平面之间具有第一夹角(α)，像素界定结构(1023)的与第二开口(1022)邻接的第二侧边(1023b)与平行于衬底基板(101)的主表面的平面之间具有第二夹角(β)，且第一夹角(α)小于第二夹角(β)，该有机发光二极管显示面板(100)通过使得像素界定结构(1023)的与第一开口(1021)邻接的第一侧边(1023a)与平行于衬底基板(101)的主表面的平面之间具有的第一夹角(α)小于像素界定结构(1023)的与第二开口(1022)邻接的第二侧边(1023b)与平行于衬底基板(101)的主表面的平面之间具有的第二夹角(β)，以同时解决设置辅助电极带来的分辨率降低的问题和混光过程中容易出现的色偏的问题。

Description

有机发光二极管显示面板及其制备方法、显示装置 技术领域
本公开的实施例涉及一种有机发光二极管显示面板及其制备方法和显示装置。
背景技术
有机发光二极管(Organic Light Emitting Diode，OLED)显示器件因其具有自发光、广视角、对比度高、耗电低、反应速度快、重量超轻薄、屏幕可卷曲性好、制作工艺简单等优点，已经成为了光电显示技术领域的研究热点。
通常，有机发光二极管包括层叠设置的下电极、发光层、有机功能层和上电极。例如，该发光层可以形成在像素界定层包括的开口中，该有机功能层可以形成在下电极(例如，阳极)和像素限定层的上表面。该有机功能层可以包括依次层叠的空穴注入层、空穴传输层、空穴阻挡层、电子传输层和电子注入层等，发光层可以设置在空穴传输层和空穴阻挡层之间。在有机功能层上可以形成其它的层结构，例如上电极(例如，阴极)等。
发明内容
本公开至少一实施例提供一种有机发光二极管显示面板及其制备方法和显示装置,该有机发光二极管显示面板通过使得像素界定结构的与第一开口邻接的第一侧边与平行于衬底基板的主表面的平面之间具有的第一夹角小于像素界定结构的与第二开口邻接的第二侧边与平行于衬底基板的主表面的平面之间具有的第二夹角，以同时解决设置辅助电极带来的分辨率降低的问题和混光过程中的色偏的问题。
本公开至少一实施例提供一种有机发光二极管显示面板,该有机发光二极管显示面板包括：衬底基板；设置在所述衬底基板上的像素界定层；其中，所述像素界定层包括第一开口、第二开口和在所述第一开口和所述第二开口之间的像素界定结构，所述第一开口中具有层叠设置的发光层和第一电极，所述第二开口中不具有所述发光层，所述像素界定结构的与所述第一开口邻接的第一侧边与平行于所述衬底基板的主表面的平面之间具有第一夹角，所述像素界定结构的与所述第二开口邻接的第二侧边与平行于所述衬底基板 的主表面的平面之间具有第二夹角，且所述第一夹角小于所述第二夹角。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，所述第二开口中设置有与所述第一电极电连接的辅助电极，所述第一电极从所述第一开口延伸至所述第二开口，且所述第一电极在所述第二开口中和所述辅助电极间隔设置。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，至少在位于所述第二开口中的所述第一电极的远离所述衬底基板的一侧设置有金属氧化物导电层，且所述金属氧化物导电层至少覆盖所述辅助电极的侧表面，以使所述第一电极和所述辅助电极通过所述金属氧化物导电层电连接。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，所述第一电极在所述发光层的远离所述衬底基板的一侧，在所述第一开口和所述第二开口中的所述第一电极的远离所述衬底基板的一侧设置有所述金属氧化物导电层，且所述金属氧化物导电层从所述第一开口延伸至所述第二开口，并覆盖所述辅助电极的侧表面和所述辅助电极的远离所述衬底基板的表面。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，在所述辅助电极和所述金属氧化物导电层之间设置有第一子电极，所述第一子电极和所述第一电极在同一工艺步骤中形成。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，在所述第一开口中，在所述第一电极的靠近所述衬底基板的一侧设置有第一有机功能层，所述第一有机功能层从所述第一开口延伸至所述第二开口，所述第一有机功能层和所述辅助电极在所述第二开口中间隔设置，且在所述辅助电极的远离所述衬底基板的一侧设置有第二有机功能层，所述第一有机功能层和所述第二有机功能层在同一工艺步骤中形成。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，在所述发光层的靠近所述衬底基板的一侧设置有第二电极，在所述第二电极的靠近所述衬底基板的一侧设置有薄膜晶体管，在所述第二电极和所述薄膜晶体管之间设置有平坦化层，所述第二电极通过设置在所述平坦化层中的第一过孔结构和所述薄膜晶体管的第一源漏电极电连接。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，所述第二开口中设置有所述平坦化层，所述辅助电极设置在平坦化层的远离衬底 基板的一侧。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，所述平坦化层在垂直于所述衬底基板的方向上的厚度大于所述像素界定层在垂直于所述衬底基板的方向上的厚度，所述平坦化层的与所述第二开口邻接的侧边与平行于所述衬底基板的主表面的平面之间具有第三夹角，所述第三夹角的大小大于所述第二夹角的大小。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，所述平坦化层的与所述第二开口邻接的侧边与平行于所述衬底基板的主表面的平面之间具有第三夹角，所述第三夹角的大小等于所述第二夹角的大小。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，所述平坦化层的与所述第二开口邻接的侧边在所述衬底基板上的正投影的最远离所述第一开口的部分，与所述像素界定结构的所述第二侧边在所述衬底基板上的正投影的最远离所述第一开口的部分之间的距离大于0。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，所述第一侧边包括沿远离所述衬底基板的方向依次设置的第一子侧边和第二子侧边，所述第一子侧边与平行于所述衬底基板的主表面的平面之间具有第四夹角，所述第二子侧边与平行于所述衬底基板的主表面的平面之间具有第五夹角，且所述第四夹角大于所述第五夹角，所述第四夹角等于所述第一夹角。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，所述辅助电极包括层叠设置的钛金属层、铝金属层和钛金属层。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，所述铝金属层在所述衬底基板上的正投影在所述钛金属层在所述衬底基板上的正投影之内。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，所述第一开口为多个，在相邻的所述第一开口中所述发光层发射的光线的颜色不同。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，所述第一夹角的取值范围为20°～40°，所述第二夹角的取值范围为65°～90°。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，所述第二开口为透明显示区域，所述第二开口中未设置所述像素界定层。
例如，在本公开至少一实施例提供的有机发光二极管显示面板中，所述 第二开口中设置有指纹识别传感器。
本公开至少一实施例还提供一种显示装置，该显示装置包括上述任一项所述的有机发光二极管显示面板。
本公开至少一实施例还提供一种有机发光二极管显示面板的制备方法,该制备方法包括：提供衬底基板；在所述衬底基板上形成像素界定层，其中，所述像素界定层包括第一开口、第二开口和在所述第一开口和所述第二开口之间的像素界定结构；在所述第一开口中依次形成发光层和第一电极；在所述第二开口中不形成所述发光层；所述像素界定结构的与所述第一开口邻接的第一侧边与平行于所述衬底基板的主表面的平面之间具有第一夹角，所述像素界定结构的与所述第二开口邻接的第二侧边与平行于所述衬底基板的主表面的平面之间具有第二夹角，且所述第一夹角小于所述第二夹角。
例如，本公开至少一实施例提供的制备方法，还包括在所述第二开口中形成与所述第一电极电连接的辅助电极。
例如，在本公开至少一实施例提供的制备方法中，所述形成像素界定层包括采用掩膜板遮挡对像素界定薄膜进行曝光处理以形成所述第一开口、所述第二开口和在所述第一开口和所述第二开口之间的像素界定结构膜层，且对所述像素界定结构膜层的与所述第一开口邻接的部分的曝光能量小于对所述像素界定结构膜层的与所述第二开口邻接的部分的曝光能量以形成台阶状的像素界定结构前体。
例如，本公开至少一实施例提供的制备方法，还包括对所述台阶状的像素界定结构前体进行热处理，其中，所述热处理包括将具有第一温度的所述台阶状的像素界定结构前体放置在加热设备中，在所述加热设备中将所述台阶状的像素界定结构前体的温度升高至第二温度。
例如，在本公开至少一实施例提供的制备方法中，所述形成像素界定层包括采用第一构图工艺形成所述第一开口、所述第二开口和在所述第一开口和所述第二开口之间的像素界定结构膜层，对所述像素界定结构膜层的与所述第二开口邻接的部分进行第二构图工艺以形成所述像素界定结构。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例， 而非对本公开的限制。
图1A为本公开至少一实施例提供的一种有机发光二极管显示面板的截面结构示意图；
图1B为本公开至少一实施例提供的再一种有机发光二极管显示面板的截面结构示意图；
图1C为本公开至少一实施例提供的又一种有机发光二极管显示面板的截面结构示意图；
图1D为本公开至少一实施例提供的又一种有机发光二极管显示面板的截面结构示意图；
图1E为本公开至少一实施例提供的一种有机发光二极管显示面板的平面结构示意图；
图2为本公开至少一实施例提供的一种第一有机功能层和发光层的截面结构示意图；
图3为本公开至少一实施例提供的一种透明显示器件的截面结构示意图；
图4为本公开至少一实施例提供的透明显示器件的像素界定结构、发光元件和导线的平面结构示意图；
图5为本公开至少一实施例提供的一种具有显示功能的有机光电传感器件的截面结构示意图；
图6为图5所示具有显示功能的有机光电传感器件的平面结构示意图；
图7为本公开至少一实施例提供的一种有机发光二极管显示面板的制备方法的流程图；
图8A-8B为本公开至少一实施例提供的一种像素界定层的形成过程的示意图；
图9A-9C为本公开至少一实施例提供的再一种像素界定层的形成过程的示意图；
图9D为本公开至少一实施例提供的一种像素界定层的截面结构示意图；以及
图10A-10B为本公开至少一实施例提供的又一种像素界定层的形成过程的示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
在有机发光二极管(Organic Light Emitting Diode，OLED)显示面板的相关技术中，作为顶发射的OLED显示面板的阴极需要是透明的，阴极的透光率和导电率是影响OLED显示面板的显示品质的至关重要的因素。
例如，采用透明度较高的单层的氧化铟锡、氧化铟锌或者薄层金属等材料制作阴极时，阴极的电阻较大，还容易造成OLED显示面板的中心区域与边缘区域的驱动电压的差距较大，即会产生较大的电压降，而且随着OLED显示面板尺寸的增加，阴极的电压降显著，从而会出现显示面板的显示亮度不均匀的问题。因此，为了改善OLED显示面板的显示亮度不均匀的问题，通过增加与阴极电连接的辅助电极可以降低阴极的方块电阻，从而可以降低整个OLED显示面板的压降(IR Drop)，以减少OLED显示面板的功耗，进而可以提高OLED显示面板的显示亮度的均匀性。该方块电阻又称为薄层电阻，其定义为正方形的导电薄层在电流方向上所具有的电阻，即方块电阻(Sheet Resistance)为单位厚度单位面积的导电材料的电阻值，其单位为欧姆每方。但是，辅助电极需要占据原本属于显示区域的位置，这样会使得OLED显示面板的分辨率降低。
本公开的发明人注意到可以通过调整像素界定层的坡度角，使得像素界 定层的远离发光层的一侧的坡度角增大，以提高OLED显示面板的分辨率，但是，像素界定层的坡度角增大，在混光的过程中会出现色偏的现象，即具有混光不均匀的风险，从而会降低OLED显示面板的显示质量。此外，坡度角过大还会出现阴极的覆盖性差，且随着OLED显示面板在使用过程中温度升高阴极会发生热膨胀，这样会导致像素界定层的具有较大坡度角的位置处阴极的电阻会变大，像素发光电压会升高，最终导致显示亮度发生衰减。因此，基于上述原因，可以考虑使得像素界定层的靠近发光层一侧的坡度角小于像素界定层的远离发光层一侧的坡度角，以解决设置辅助电极带来的分辨率降低的问题和混光过程中容易出现的色偏的问题。
本公开至少一实施例提供一种有机发光二极管显示面板,该有机发光二极管显示面板包括：衬底基板，设置在衬底基板上的像素界定层，该像素界定层包括第一开口、第二开口和在第一开口和第二开口之间的像素界定结构，该第一开口中具有层叠设置的发光层和第一电极，第二开口中不具有发光层，该像素界定结构的与第一开口邻接的第一侧边与平行于衬底基板的主表面的平面之间具有第一夹角，该像素界定结构的与第二开口邻接的第二侧边与平行于衬底基板的主表面的平面之间具有第二夹角，且该第一夹角小于第二夹角，该有机发光二极管显示面板通过使得像素界定结构的与第一开口邻接的第一侧边与平行于衬底基板的主表面的平面之间具有的第一夹角小于像素界定结构的与第二开口邻接的第二侧边与平行于衬底基板的主表面的平面之间具有的第二夹角，以解决设置辅助电极带来的分辨率降低的问题和混光过程中容易出现的色偏的问题。
例如，图1A为本公开至少一实施例提供的一种有机发光二极管显示面板的截面结构示意图，如图1A所示，该有机发光二极管显示面板100包括：衬底基板101，设置在衬底基板101上的像素界定层102，该像素界定层102包括第一开口1021、第二开口1022和在第一开口1021和第二开口1022之间的像素界定结构1023，该第一开口1021中具有层叠设置的发光层103和第一电极104，第二开口1022中设置有与第一电极104电连接的辅助电极105，且第二开口1022中不具有发光层，该像素界定结构1023的与第一开口1021邻接的第一侧边1023a与平行于衬底基板101的主表面的平面之间具有第一夹角α，该像素界定结构1023的与第二开口1022邻接的第二侧边1023b与平行于衬底基板101的主表面的平面之间具有第二夹角β，且该第 一夹角α小于第二夹角β，该有机发光二极管显示面板100通过使得像素界定结构1023的与第一开口1021邻接的第一侧边1023a与平行于衬底基板101的主表面的平面之间具有的第一夹角α小于像素界定结构1023的与第二开口1022邻接的第二侧边1023b与平行于衬底基板101的主表面的平面之间具有的第二夹角β，以解决设置辅助电极105带来的分辨率降低的问题和混光过程中容易出现的色偏的问题。
需要说明的是，该像素界定结构1023具有靠近衬底基板101的底边，远离衬底基板101的顶边，以及位于顶边和底边之间的侧边，即该侧边夹设在底边和顶边之间，且该侧边包括上述相对设置的第一侧边1023a和第二侧边1023b。
例如，在通常的有机发光二极管显示面板的结构中，像素界定结构的相对的两个侧面与平行于衬底基板的主表面的平面之间具有的角度相等，该角度的大小与第一夹角的大小大致相等，即像素界定结构的相对的两个侧面与平行于衬底基板的主表面的平面之间的角度均为较小的角度，但是，该种设置会降低有机发光二极管显示面板的分辨率。
例如，如图1A所示，将像素界定结构1023的与第一开口1021邻接的第一侧边1023a与平行于衬底基板101的主表面的平面之间具有的第一夹角α保持较小的状态可以降低色偏的风险，将像素界定结构1023的与第二开口1022邻接的第二侧边1023b与平行于衬底基板101的主表面的平面之间具有的第二夹角β变大可以使得像素界定结构1023的靠近第二开口1022的侧边变陡，从而可以减少像素界定结构1023所占的空间，以提高有机发光二极管显示面板的分辨率。
例如，在一个示例中，该第一电极104为阴极，第一电极104从第一开口1021延伸至第二开口1022，且第一电极104在第二开口1022中和辅助电极105间隔设置，即在第二开口中第一电极104是断开的。形成第一电极104时，该第一电极104的薄膜可以是整层形成的，该第一电极104的材料为导电金属材料，该导电金属材料的厚度很薄，容易导致最终形成的第一电极104断裂。例如，在第二开口1022中，由于辅助电极105的高度较高，第一电极104在靠近辅助电极105的位置处发生了断裂使得第一电极104和辅助电极105在第二开口1022中间隔开。
例如，如图1A所示，该第一电极104的一部分位于第一开口1021中， 另一部分位于第二开口1022中，至少在位于第二开口1022中的第一电极104的远离衬底基板101的一侧设置有金属氧化物导电层118，该金属氧化物导电层118从第一电极104延伸至至少覆盖辅助电极105的侧表面，以使第一电极104和辅助电极105通过该金属氧化物导电层118电连接，该辅助电极105与第一电极104实现电连接，从而减小了第一电极104的电阻。
例如，如图1A所示，第一电极104在发光层103的远离衬底基板101的一侧，在第一开口1021和第二开口1022中的第一电极104的远离衬底基板101的一侧设置有金属氧化物导电层118，且该金属氧化物导电层118从第一开口1021延伸至第二开口1022，并覆盖辅助电极105的侧表面。尽管金属氧化物导电层118和辅助电极105的远离衬底基板101的表面不是直接接触的，该金属氧化物导电层118覆盖辅助电极105的远离衬底基板101的表面。即该位于第一开口1021中的第一电极104的远离衬底基板101的一侧也设置有金属氧化物导电层118，该金属氧化物导电层118和第一电极104并联连接从而进一步地减小了第一电极104的电阻，以减小了整个有机发光二极管显示面板的电压降。
例如，如图1A所示，该金属氧化物导电层118的延展性好，即使在高度较高的辅助电极105的位置处，该金属氧化物导电层118也不容易断裂，该金属氧化物导电层118整层设置，从第一开口1021延伸至第二开口1022，该金属氧化物导电层118还覆盖辅助电极105的侧表面和上表面。
例如，该金属氧化物导电层118的材料包括氧化铟锌和氧化铟锡中的至少之一，当然，本公开的实施例不限于此，只要满足导电性好、透明度高和延展性好即可。
例如，如图1A所示，在发光层103的靠近衬底基板101的一侧设置有第二电极112，在第二电极112的靠近衬底基板101的一侧设置有薄膜晶体管120，在第二电极112和薄膜晶体管120之间设置有平坦化层113，第二电极112通过设置在平坦化层113中的第一过孔结构114和薄膜晶体管120的第一源漏电极109电连接。
例如，如图1A所示，图1A中以薄膜晶体管为顶栅型薄膜晶体管为例进行说明，该薄膜晶体管120包括有源层106、栅绝缘层107、栅极108、层间绝缘层111、第一源漏电极109和第二源漏电极110，平坦化层113设置在第一源漏电极109和第二源漏电极110的远离衬底基板101的一侧，该第二 电极112设置在平坦化层113的远离衬底基板101的一侧，该第二电极112通过贯穿平坦化层113的第一过孔结构114与第一源漏电极109进行电连接。
例如，该栅极108的材料可以为铜与其他金属的组合，例如，铜/钼(Cu/Mo)、铜/钛(Cu/Ti)、铜/钼钛合金(Cu/MoTi)、铜/钼钨合金(Cu/MoW)、铜/钼铌合金(Cu/MoNb)等；该栅金属层的材料也可以为铬基金属或铬与其他金属的组合，例如，铬/钼(Cr/Mo)、铬/钛(Cr/Ti)、铬/钼钛合金(Cr/MoTi)等。
例如，该栅绝缘层107和该层间绝缘层111可以起到保护和绝缘的作用。该栅绝缘层107和该层间绝缘层111的材料包括氮化硅(SiNx)、氧化硅(SiOx)、氧化铝(Al 2O 3)、氮化铝(AlN)、丙烯酸类树脂或者其他适合的材料。
例如，该有源层106的材料为氧化铟镓锌(IGZO)、氧化铟锡(ITO)、氧化铟锌(IZO)、氧化铟镓(IGO)、氧化镓锌(GZO)和碳纳米管等，该透明导电薄膜的材料还可以为氧化锌(ZnO)、氧化铟(In 2O 3)和氧化铝锌(AZO)等。该氧化物半导体层可以利用磁控溅射的方式沉积而成，其厚度可以为30-50nm。
例如，该第一源漏电极109和第二源漏电极110的材料为铜基金属。铜金属具有电阻率低、导电性好的特点，因而可以提高第一源漏电极和第二源漏电极的信号传输速率，提高显示质量。
例如，该铜基金属为铜(Cu)、铜锌合金(CuZn)、铜镍合金(CuNi)或铜锌镍合金(CuZnNi)等性能稳定的铜基金属合金。
例如，在一个示例中，该第二电极112可以是阳极，对应的第一电极104为阴极。
例如，在一个示例中，在保证第一夹角α小于第二夹角β的基础上，可以使得第一夹角α的取值范围为20°～40°，第二夹角β的取值范围为65°～90°。例如，第一夹角的取值可以为20°、25°、30°、35°、或者40°。该第二夹角β的取值可以为65°、70°、75°、85°或者90°，本公开的实施例对此不作限定。
例如，如图1A所示，该平坦化层113的与第二开口1022邻接的侧边与平行于衬底基板101的主表面的平面之间具有第三夹角γ，该第三夹角γ的取值范围可以为65°～90°，该第三夹角γ的大小等于第二夹角β的大小，该平坦化层113不是完全透明的，至少会阻碍部分光线透过，从而上述设计可以 使得不会因为平坦化层113的阻挡降低显示面板的分辨率。此外，该像素界定结构1023相对于平坦化层113向靠近第一开口1021的一侧进行了内缩，从而使得在像素界定结构1023和平坦化层113交界的位置处形成了台阶，从而使得该第一电极104在像素界定结构1023和平坦化层113交界的位置处不容易断裂，从而减小了断路的风险。
需要说明的是，本公开的实施例不限于此，还可以是该第三夹角γ的大小大于第二夹角β的大小。
例如，如图1A所示，该平坦化层113的与第二开口1022邻接的侧边在衬底基板101上的正投影的最远离第一开口1021的部分，与像素界定结构1023的第二侧边1023b在衬底基板101上的正投影的最远离第一开口1021的部分之间的距离大于0，即该像素界定结构1023相对于平坦化层113向靠近第一开口1021的一侧进行了内缩，从而使得在像素界定结构1023和平坦化层113交界的位置处形成了台阶。
需要说明的是，衬底基板101的主表面是指衬底基板101的设置有发光层103、栅极108、第二源漏电极110、第一源漏电极109、第一电极104和第二电极112等结构的表面。
例如，在另一个示例中，该平坦化层113在垂直于衬底基板101的方向上的厚度大于像素界定层102在垂直于衬底基板101的方向上的厚度，平坦化层113的与第二开口1022邻接的侧边与平行于衬底基板101的主表面的平面之间具有第三夹角γ，该第三夹角γ的大小可以大于第二夹角β的大小，该设计可以使得该第一电极104在像素界定结构1023和平坦化层113交界的位置处不容易断裂，从而减小了断路的风险。
例如，如图1A所示，该有机发光二极管显示面板100还包括第一有机功能层115，该第一有机功能层115从第一开口1021延伸至第二开口1022，且在第二开口1022中出现断裂的现象，该第一有机功能层115可以是单层结构也可以是多层层叠的结构。在图1A中示出的是第一有机功能层115设置在发光层103的靠近衬底基板101的一侧，该第一有机功能层115可以是空穴注入层和空穴传输层中的一个，也可以是空穴注入层和空穴传输层的叠层结构，且空穴注入层在空穴传输层的靠近衬底基板101的一侧。
例如，尽管图1A中只示出了第一有机功能层115设置在发光层103的靠近衬底基板101的一侧，在其他的示例中，该第一有机功能层115可以包 括被发光层103间隔开且与发光层103层叠设置的第一部分130和第二部分131。例如，图2为本公开至少一实施例提供的一种第一有机功能层和发光层的截面结构示意图，如图2所示，该第一有机功能层115的第一部分130设置在发光层103的靠近衬底基板101的一侧，该第一有机功能层115的第二部分131设置在发光层103的远离衬底基板101的一侧。该第一部分130为空穴注入层1301和空穴传输层1302的叠层结构，当然，本公开的实施例不限于此，该第一部分130还可以是空穴注入层1301和空穴传输层1302中的一个。该第二部分131为空穴阻挡层1311、电子传输层1312和电子注入层1313的层叠结构，且该空穴阻挡层1311和发光层103直接接触，该电子注入层1313在电子传输层1312的远离衬底基板101的一侧。
例如，尽管图1A只示出了第一有机功能层115在发光层103的靠近衬底基板101的一侧，但是当该第一有机功能层115为图2所示的叠层结构时，该第一有机功能层115和发光层103的位置关系可以为图2所示的结构，结合图1A和图2该第一有机功能层115包括的电子注入层1313、电子传输层1312、发光层103、空穴传输层1302和空穴注入层1301通过整面蒸镀的方式形成，上述电子注入层1313、电子传输层1312、发光层103、空穴传输层1302和空穴注入层1301均从第一开口1021延伸至第二开口1022，且在第二开口1022中断裂以与辅助电极105在平行于衬底基板101的主表面的平面上相互间隔。
例如，如图1A所示，在辅助电极105和金属氧化物导电层118之间设置有第一子电极116，该第一子电极116和第一电极104在同一工艺步骤中同层形成，通过磁控溅射的方式形成整层的第一电极薄膜，该第一电极薄膜从第一开口1021延伸至第二开口1022的部分作为第一电极104，第一电极薄膜在第二开口1022中断裂，残留在辅助电极105上的部分作为第一子电极116。该第一子电极116和第一电极104分别与金属氧化物导电层118电连接，辅助电极105与金属氧化物导电层118电连接，而且辅助电极105与第一子电极116形成层叠结构且辅助电极105和第一子电极116直接接触，这种设计进一步减小了第一子电极116和第一电极104的电阻。
例如，如图1A所示，在辅助电极105的远离衬底基板101的一侧设置有第二有机功能层117，该第一有机功能层115和第二有机功能层117在同一工艺步骤中同层形成。在垂直于衬底基板101的主表面的方向上，在辅助 电极105和金属氧化物导电层118之间还残留着对应的电子注入层、电子传输层、发光层、空穴传输层和空穴注入层，该部分电子注入层、电子传输层、发光层、空穴传输层和空穴注入层组成上述第二有机功能层117。
需要说明的是，在本公开的实施例中，该第一子电极116和第一电极104在同一工艺步骤中同层形成，该第一有机功能层115和第二有机功能层117在同一工艺步骤中同层形成中的“在同一工艺步骤中同层形成”指的是采用同一成膜工艺形成特定图形的膜层，然后采用同一掩膜板通过一次构图工艺形成的对应的层结构。根据特定图形的不同，依次构图工艺可以包括多次曝光、显影和刻蚀工艺，而形成的同层设置的特定图形是连续的也可以是不连续的，这些特定图形还可能处于不同的高度或者具有不同的厚度。
例如，形成上述电子注入层1313、电子传输层1312、发光层103、空穴传输层1302和空穴注入层1301的方法包括沉积法、平版印刷法(lithographic)、喷墨打印法、热转印法和蒸镀法。沉积法包括采用阴罩(shadow mask)遮挡真空沉积有机材料来形成该第一有机功能层和第二有机功能层。平版印刷法包括沉积有机材料，在沉积有机材料之后利用光致刻蚀剂使该有机材料形成图案来形成该第一有机功能层和第二有机功能层。该平版印刷法可适用于形成高分辨率图案。喷墨打印法可以直接使得有机膜层形成图案，在喷墨打印方法中，从喷墨打印机的打印头(head)喷射包含有机材料的溶液以形成该第一有机功能层和第二有机功能层，喷墨打印法的操作相对简单。热转印法可利用例如激光诱导热转印来形成该第一有机功能层和第二有机功能层，采用该方法可以形成高分辨率的图案，厚度均匀的薄膜，而且还可以大规模生产。
例如，在一个示例中，该辅助电极105包括层叠设置的钛金属层、铝金属层和钛金属层，即该铝金属层夹设在两层钛金属层之间，以形成“工”字型结构，从而可以提高辅助电极105的稳定性。
例如，该铝金属层在衬底基板101上的正投影在钛金属层在衬底基板101上的正投影之内。
例如，在一个示例中，该第一开口1021为多个，在相邻的第一开口1021中发光层103发射的光线的颜色不同。例如，在一个第一开口1021中该发光层103发射的光线的颜色为红色，与该第一开口1021相邻的两个第一开口1021中的发光层103发射的光线的颜色分别为绿色和蓝色，这样三个相 邻的第一开口1021中的发光层103发射的光线混光后可以形成白光。例如，在不考虑不同的第一开口1021中的发光层103发射光线的颜色不同这一差异的前提下，图1A中所示的整体结构可以作为一个重复单元。
例如，图1B为本公开至少一实施例提供的再一种有机发光二极管显示面板的截面结构示意图，如图1B所示，像素界定层102和平坦化层113的材料可以相同，例如，可以均为无机绝缘材料，例如氮化硅、氧化硅等。像素界定层102和平坦化层113可以在同一工艺步骤中形成，因此，像素界定层102和平坦化层113可以共用一个侧边。如图1B所示，该像素界定结构1023的第二侧边1023b与平坦化层113的靠近第二开口1022的侧边在同一个平面上。该种类设计可以减少工艺步骤，从而可以降低制作成本。
例如，如图1B所示，该像素界定结构1023与第二开口1022邻接的第二侧边1023b与平行于衬底基板101的主表面的平面之间具有第二夹角β，该平坦化层113与第二开口1022邻接的侧边与平行于衬底基板101的主表面的平面之间具有第三夹角γ，该第三夹角γ的大小等于第二夹角β的大小，该第二夹角β和第三夹角γ的取值范围可以为65°～90°。
例如，图1C为本公开至少一实施例提供的又一种有机发光二极管显示面板的截面结构示意图，如图1C所示，在第二开口1022中设置有平坦化层113，该辅助电极105设置在平坦化层113的远离衬底基板101的一侧，例如，该辅助电极105的材料可以包括依次层叠的金属氧化物导电层、银导电层和金属氧化物导电层，例如，ITO/Ag/ITO的叠层结构。
例如，如图1C所示，该像素界定结构1023与第二开口1022邻接的第二侧边1023b与平行于衬底基板101的主表面的平面之间具有第二夹角β，该平坦化层113与第二开口1022邻接的侧边与平行于衬底基板101的主表面的平面之间具有第三夹角γ，该第三夹角γ的大小等于第二夹角β的大小，或者该第三夹角γ的大小大于第二夹角β的大小。
例如，图1D为本公开至少一实施例提供的又一种有机发光二极管显示面板的截面结构示意图，如图1D所示，该平坦化层113整层形成，且平坦化层113的厚度均一，不需要对该平坦化层113进行构图工艺，以减少一次工艺步骤。
例如，图1E为本公开至少一实施例提供的一种有机发光二极管显示面板的平面结构示意图，如图1E所示为红色子像素R、绿色子像素G和蓝色 子像素B的排布顺序，在每个子像素的周边示出了第一开口1021和第二开口1022，像素界定结构1023包括的与第一开口1022邻接的第一侧边1023a，以及像素界定结构1023的与第二开口1022邻接的第二侧边1023b，该有机发光二极管显示面板的其他结构可以参见上述中的相关描述。在此不再赘述。
例如，图1E示出了两个绿色子像素G、一个红色子像素R和一个蓝色子像素B，两个绿色子像素G关于红色子像素R的中心和蓝色子像素B的中心连接的直线成轴对称。
例如，在一个示例中，该第二开口1022为透明显示区域，该第二开口1022中未设置像素界定层，具体可以参见下述图3的相关描述。
例如，在另一个示例中，该第二开口1022中还可以设置有指纹识别传感器，具体可以参见下述图5的相关描述。
本公开至少一实施例还提供一种显示装置，该显示装置包括上述任一实施例中的有机发光二极管显示面板，该显示装置诸如包括平板计算机、智能电话、头戴式显示器、汽车导航单元、照相机、在车辆中提供的中心信息显示器(CID)、手表型电子装置或其他穿戴设备、个人数字助理(PDA)、便携式多媒体播放器(PMP)和游戏机的中小型电子装置，以及诸如电视、外部广告牌、监控器、包含显示屏幕的家用电器、个人计算机和膝上型计算机的中大型电子装置、透明显示器件以及具有显示功能的有机光电传感器件。如上所述的电子装置可以代表用于应用显示装置的单纯示例，并且因此本领域普通技术人员可以认识到，在不脱离本公开的精神和范围的情况下，显示面板也可以应用于其他任何具有显示功能电子装置。
例如，图3为本公开至少一实施例提供的一种透明显示器件的截面结构示意图，如图3所示，该透明显示器件300包括衬底基板301，依次设置在衬底基板301上的遮光层302、缓冲层303、有源层304、第一栅绝缘层305、第一栅极306、第二栅绝缘层309、第二栅极308和层间绝缘层310，第一源漏电极307和第二源漏电极311设置在层间绝缘层310的远离衬底基板301的一侧，且该第一源漏电极307和第二源漏电极311相对设置，在第一源漏电极307和第二源漏电极311的远离衬底基板301的一侧依次设置有平坦化层316和像素界定结构312，相邻的像素界定结构312之间具有第一开口317和第二开口319，该第一开口317和第二开口319交替设置，在该第一开口 317中设置有层叠的第二电极313、有机功能层314、发光层315和第一电极318。该透明显示器件300包括显示区域和透光区域，该第一开口317对应于显示区域，第二开口319对应于透光区域，即为透明显示区域，该第二开口319中未设置像素界定层。该像素界定结构312的与第一开口317邻接的第一侧边与平行于衬底基板301的主表面的平面之间具有第一夹角α，该像素界定结构312的与第二开口319邻接的第二侧边与平行于衬底基板301的主表面的平面之间具有第二夹角β，且该第一夹角α小于第二夹角β，该透明显示器件300通过使得像素界定结构312的与第一开口317邻接的第一侧边与平行于衬底基板301的主表面的平面之间具有的第一夹角α小于像素界定结构312的与第二开口319邻接的第二侧边与平行于衬底基板301的主表面的平面之间具有的第二夹角β，以在不减小显示区域的面积的基础上增加透光区域的面积。
例如，在一个示例中，在保证第一夹角α小于第二夹角β的基础上，可以使得第一夹角α的取值范围为20°～40°，第二夹角β的取值范围为65°～90°。例如，第一夹角α的取值可以为20°、25°、30°、35°、或者40°。该第二夹角β的取值可以为65°、70°、75°、85°或者90°，本公开的实施例对此不作限定。
例如，如图3所示，该平坦化层316的与第二开口319邻接的侧边与平行于衬底基板301的主表面的平面之间具有第三夹角γ，该第三夹角γ的取值范围可以为65°～90°，该第三夹角γ大小等于第二夹角β的大小，从而使得不会因为平坦化层316减小了透光区域的空占比。此外，该像素界定结构312相对于平坦化层316向靠近第一开口317的一侧进行了内缩，从而使得在像素界定结构312和平坦化层316交界的位置处形成了台阶，从而使得该第一电极318在像素界定结构312和平坦化层316交界的位置处不容易断裂，从而减小了断路的风险。
需要说明的是，透明显示器件要求显示区域的空占比尽可能的小，非显示区域的空占比尽可能的大。该平坦化层316和像素界定结构312的透过率约为80％，通过将非显示区域(透光区域)中的平坦化层316和像素界定结构312设置成具有大角度，可以明显地提高透光区域的空占比，从而可以提高光线的透过率。通过对比发现，当非显示区域(透光区域)的面积从32.57％增加到41.47％，光线的透过率可以提升27％。尽管遮光层302的遮挡是决定光线是否透过的关键因素，但是像素界定结构312也会对光线进行一定程度 的遮挡，从而使得透光区域的面积减小，通过使得像素界定结构312的与第二开口319邻接的第二侧边与平行于衬底基板301的主表面的平面之间具有的第二夹角β变大，进而可以增加透光区域的面积，以提高透光区域的空占比，使得透明显示器件300整体的透过率增大，且像素界定结构312的与第一开口317邻接的第一侧边与平行于衬底基板301的主表面的平面之间具有的第一夹角α保持较小的状态可以降低显示区域出现色偏的风险，从而可以提高透明显示器件的品质。
例如，图4为本公开至少一实施例提供的透明显示器件的像素界定结构、发光元件和导线的平面结构示意图，如图4所示，四个像素界定结构312和导线313围设的区域为透光区域320，发光层所在的区域为显示区域。例如，每个像素界定结构312对应三个发光单元231，该三个发光单元231包括第一颜色发光单元231a、第二颜色发光单元231b和第三颜色发光单元231c。例如，该第一颜色发光单元231a、第二颜色发光单元231b和第三颜色发光单元231c可以分别为红色发光单元、绿色发光单元和蓝色发光单元。例如，在图4中椭圆形的虚线框标注的为第二夹角β对应的位置，在该位置处左上角处的像素界定结构312的右下角的位置处向远离透光区域的中心的方向进行了内缩，从而使得透光区域的面积增大。同样地，对于右上角、左下角和右下角位置的像素界定结构312均具有向远离对应的透光区域的中心的方向内缩的设计，从而使得对应的透光区域的面积均增加了。从而，在整体上提高了透明显示器件的透光区域的空占比。
例如，图5为本公开至少一实施例提供的一种具有显示功能的有机光电传感器件的截面结构示意图，如图5所示，在衬底基板401上设置有缓冲层402，在缓冲层402上依次设置有第一栅极403、第一栅绝缘层404、第一有源层405、和同层设置的第一源漏电极408和第二源漏电极409。在缓冲层402上还设置有与第一栅极403同层设置的第二栅极424，在第一栅绝缘层404上还设置有与第一有源层405同层设置的第二有源层406，在第二有源层406的远离衬底基板401的一侧设置有第二绝缘层407，在第一有源层405和第一源漏电极408/第二源漏电极409之间也设置有该第二绝缘层407，在第二绝缘层407的远离衬底基板401的一侧还设置有与第一源漏电极408/第二源漏电极409同层设置的第三源漏电极410和第四源漏电极423，在第一源漏电极408/第二源漏电极409和第三源漏电极410/第四源漏电极423的远 离衬底基板401的一侧还设置有钝化层411，在钝化层411的远离衬底基板401的一侧还设置有平坦化层412，在平坦化层412的远离衬底基板401的一侧设置有同层设置的第一电极413和第三电极414。第一电极413通过贯穿钝化层411和平坦化层412的第二过孔结构和第二源漏电极409电连接，第三电极414通过贯穿钝化层411和平坦化层412的第三过孔结构和第三源漏电极410电连接。在第一电极413和第三电极414的远离衬底基板401的一侧设置有像素界定层415，该像素界定层415包括第一开口415a、第二开口415b和在第一开口415a与第二开口415b之间的像素界定结构415c。该第一开口415a中具有层叠设置的有机功能层422、发光层418和第一电极421，第二开口415b中设置有有机功能层422、光感应层417和第一电极421，上述有机功能层422、光感应层417和第一电极421构成指纹识别传感器。该有机功能层422和第一电极421可以整层形成。在第一电极421的远离衬底基板401的一侧设置有绝缘层416，在绝缘层416的远离衬底基板401的一侧设置有光通过孔419，在光通过孔419的远离衬底基板401的一侧设置有盖板420，该盖板420中设置有触控电极。
例如，如图5所示，该像素界定结构415c的与第一开口415a邻接的第一侧边与平行于衬底基板401的主表面的平面之间具有第一夹角α，该像素界定结构415c的与第二开口415b邻接的第二侧边与平行于衬底基板401的主表面的平面之间具有第二夹角β，且该第一夹角α小于第二夹角β，该具有显示功能的有机光电传感器件400通过使得像素界定结构415c的与第一开口415a邻接的第一侧边与平行于衬底基板401的主表面的平面之间具有的第一夹角α小于像素界定结构415c的与第二开口415b邻接的第二侧边与平行于衬底基板401的主表面的平面之间具有的第二夹角β，以在不减小显示区域的面积的基础上，可以增大传感器件的面积以增加光信号量，还可以通过使得像素界定结构415c的与第一开口415a邻接的第一侧边与平行于衬底基板401的主表面的平面之间具有的第一夹角α保持较小的状态，可以降低混光过程中出现色偏的风险。
例如，在通常的具有显示功能的有机光电传感器件的结构中，像素界定结构的相对的两个侧面与平行于衬底基板的主表面的平面之间具有的角度相等，该角度的大小与第一夹角的大小大致相等，即像素界定结构的相对的两个侧面与平行于衬底基板的主表面的平面之间的角度均为较小的角度，该 种设置会增大传感器件的面积以增加光信号量。
例如，图6为图5所示具有显示功能的有机光电传感器件的平面结构示意图，如图6所示，以一个像素单元包括一个红色子像素(R)、一个蓝色子像素(B)和两个绿色子像素(G)为例进行说明，即以GGRB像素排列为例，每个像素单元配合设置一个包括光感应层的光感应元件S。当然，本公开的实施例不限于此，还可以设置成其他子像素的排布方式。
例如，在一个示例中，相比于常规的不设置光感应元件S的显示器件，在同样的显示分辨率为440PPI的前提下，设置尺寸为180μm*2的光感应元件S，该具有显示功能的有机光电传感器件的开口率的数值可以从33.9％降低至22.97％，需要说明的是，设置光感应元件S会导致整个具有显示功能的有机光电传感器件的开口率降低，该像素界定结构415c的与第二开口415b邻接的第二侧边与平行于衬底基板401的主表面的平面之间具有的第二夹角β增大，可以缩小感光元件S所占的开口面积，从而可以在一定程度上补偿开口率。
本公开至少一实施例还提供一种有机发光二极管显示面板的制备方法,例如，图7为本公开至少一实施例提供的一种有机发光二极管显示面板的制备方法的流程图，如图7所示，该制备方法包括如下步骤。
步骤S11：提供衬底基板。
步骤S12：在衬底基板上形成像素界定层，其中，该像素界定层包括第一开口、第二开口和在第一开口和第二开口之间的像素界定结构。
步骤S13：在第一开口中依次形成发光层和第一电极，在第二开口中形成与第一电极电连接的辅助电极，像素界定结构的与第一开口邻接的第一侧边与平行于衬底基板的主表面的平面之间具有第一夹角，像素界定结构的与第二开口邻接的第二侧边与平行于衬底基板的主表面的平面之间具有第二夹角，且第一夹角小于第二夹角。
例如，该第二开口中不具有发光层。
例如，在一个示例中，可以采用光刻工艺的方法对像素界定层的不同位置采用不同的曝光量以实现像素界定层中第一开口和第二开口的形成，以及使得像素界定结构具有不同大小的角度。
例如，图8A-8B为本公开至少一实施例提供的一种像素界定层的形成过程的示意图，如图8A所示，形成像素界定层102包括：采用掩膜板121遮 挡对像素界定薄膜122进行曝光处理。如图8B所示，图8A所示的曝光处理过程完成后形成了第一开口1021、第二开口1022和在第一开口1021和第二开口1022之间的像素界定结构膜层123，在图8A中对像素界定结构膜层123的与第一开口1021邻接的部分的曝光能量小于对像素界定结构膜层123的与第二开口1022邻接的部分的曝光能量以形成台阶状的像素界定结构前体124。例如，在一个示例中，对像素界定结构膜层123的与第一开口1021邻接的部分的曝光能量为对像素界定结构膜层123的与第二开口1022邻接的部分的曝光能量的一半。例如，对像素界定结构膜层123的与第一开口1021邻接的部分的曝光为50％的曝光量，对像素界定结构膜层123的与第二开口1022邻接的部分的曝光量为100％的曝光量。例如。可以通过设置不同的狭缝衍射以使得曝光能量发生变化。
例如，该采用光刻工艺的方法进行构图为使用掩模板遮挡进行光刻的工艺。例如，该一次构图工艺包括以下步骤：在像素界定薄膜上涂覆光刻胶；对光刻胶进行曝光、显影，形成光刻胶全保留区域、光刻胶半保留区域和光刻胶去除区域；采用第一次刻蚀工艺去除光刻胶去除区域的像素界定薄膜以形成第一开口和第二开口；采用灰化工艺去除光刻胶半保留区域的光刻胶；采用第二次刻蚀工艺去除光刻胶半保留区域的部分像素界定薄膜；剥离光刻胶全保留区域的光刻胶，形成该像素界定结构。该光刻胶全保留区域对应台阶状的像素界定结构前体中厚度较大的平台，该光刻胶半保留区域对应台阶状的像素界定结构前体中厚度较小的平台，该光刻胶去除区域为光刻胶全保留区域和光刻胶半保留区域之外的区域，对应于第一开口和第二开口。
例如，在一个示例中，该像素界定结构前体124可以直接作为像素界定结构1023，该像素界定结构1023为具有台阶状结构，该具有台阶状结构的像素界定结构1023具有直接连接的第一平台和第二平台，第一平台的高度低于第二平台的高度，该像素界定结构1023的第一夹角α所在第一平台的最大厚度小于该像素界定结构1023的第二夹角β所在第二平台的最大厚度。该像素界定结构1023的对应于第一夹角α的尖角位置的平均厚度小于该像素界定结构1023的对应于第二夹角β的尖角位置的平均厚度。
需要说明的是，该像素界定结构1023的第一平台的高度指在垂直于衬底基板101的主表面的方向上第一平台的最远离衬底基板101的主表面的位置与衬底基板101的主表面之间的距离；该像素界定结构1023的第二平台 的高度指在垂直于衬底基板101的主表面的方向上第二平台的最远离衬底基板101的主表面的位置与衬底基板101的主表面之间的距离。该像素界定结构1023的第一夹角α所在第一平台的最大厚度为第一平台的远离衬底基板101的表面与第一平台的靠近衬底基板101的表面之间的最大距离；该像素界定结构1023的第二夹角β所在第二平台的最大厚度为第二平台的远离衬底基板101的表面与第二平台的靠近衬底基板101的表面之间的最大距离。该像素界定结构1023的对应于第一夹角α的尖角位置的平均厚度为第一夹角α的斜边与第一平台的靠近衬底基板101的表面之间的距离的平均值；该像素界定结构1023的对应于第二夹角β的尖角位置的平均厚度为第二夹角β的斜边与第二平台的靠近衬底基板101的表面之间的距离的平均值。
例如，在另一个示例中，上述台阶状的像素界定结构前体需要经过热处理以形成非台阶状的像素界定结构。例如，图9A-9C为本公开至少一实施例提供的再一种像素界定层的形成过程的示意图，如图9A所示，该制备方法包括：采用掩膜板121遮挡对像素界定薄膜122进行曝光处理。如图9B所示，图9A所示的曝光处理过程完成后形成了第一开口1021、第二开口1022和在第一开口1021和第二开口1022之间的像素界定结构膜层123，且对像素界定结构膜层123的与第一开口1021邻接的部分的曝光能量小于对像素界定结构膜层123的与第二开口1022邻接的部分的曝光能量以形成该台阶状的像素界定结构前体124。例如，在一个示例中，对像素界定结构膜层123的与第一开口1021邻接的部分的曝光能量为对像素界定结构膜层123的与第二开口1022邻接的部分的曝光能量的一半。例如，对像素界定结构膜层123的与第一开口1021邻接的部分的曝光为50％的曝光量，对像素界定结构膜层123的与第二开口1022邻接的部分的曝光量为100％的曝光量。
如图9C所示，对台阶状的像素界定结构前体124进行热处理，该热处理包括将具有第一温度的台阶状的像素界定结构前体124放置在加热设备中，在加热设备中将台阶状的像素界定结构前体124的温度升高至第二温度。在该第二温度下像素界定结构前体124处于流动的状态，经过自流平以形成非台阶状的像素界定结构。
例如，如图9C所示，该第一侧边1023a包括沿远离衬底基板101的方向依次设置的第一子侧边1023a-1和第二子侧边1023a-2，该第一子侧边1023a-1与平行于衬底基板101的主表面的平面之间具有第四夹角α1，第二 子侧边1023a-2与平行于衬底基板101的主表面的平面之间具有第五夹角α2，且该第四夹角α1小于第五夹角α2，第四夹角α1等于该第一夹角α，该种设计有利于从第一侧边1023a的侧向出光，从而可以避免大视角色偏。
例如，图9D为本公开至少一实施例提供的一种像素界定层的截面结构示意图，如图9D所示，该第一侧边1023a包括沿远离衬底基板101的方向依次设置的第一子侧边1023a-1和第二子侧边1023a-2，该第一子侧边1023a-1与平行于衬底基板101的主表面的平面之间具有第四夹角α1，第二子侧边1023a-2与平行于衬底基板101的主表面的平面之间具有第五夹角α2，且该第四夹角α1小大于第五夹角α2，第五夹角α2等于该第一夹角α，该种设计也有利于从第一侧边1023a的侧向出光，从而可以避免大视角色偏。
例如，该加热设备可以是烘箱等程序升温的装置，还可以是马弗炉等具有加热功能的装置，本公开的实施例对此不作限定。
例如，图10A-10B为本公开至少一实施例提供的又一种像素界定层的形成过程的示意图，如图10A所示，形成像素界定层102包括采用第一构图工艺形成第一开口1021、第二开口1022和形成在第一开口1021和第二开口1022之间的像素界定结构膜层123。如图10B所示，对该像素界定结构膜层123的与第二开口1022邻接的部分进行第二构图工艺以形成像素界定结构1023，即在该示例中形成像素界定结构需要分两次构图工艺完成。
例如，该第一构图工艺和第二构图工艺均包括使用掩模板的光刻工艺。例如，该一次构图工艺包括以下步骤：在像素界定薄膜上涂覆光刻胶；对该光刻胶进行曝光、显影，形成光刻胶保留区域和光刻胶去除区域；采用刻蚀工艺去除光刻胶去除区域的像素界定薄膜，剥离光刻胶保留区域的光刻胶，形成该第一开口、第二开口和在第一开口和第二开口之间的像素界定结构膜层。在该像素界定结构膜层上涂覆光刻胶；对该光刻胶进行曝光、显影，形成光刻胶保留区域和光刻胶去除区域；采用刻蚀工艺去除光刻胶去除区域的像素界定膜层的薄膜，剥离光刻胶保留区域的光刻胶，即对该像素界定结构膜层的与第二开口邻接的部分进行第二构图工艺以形成像素界定结构，即在该示例中形成像素界定结构需要分两次构图工艺完成。
例如，光刻胶膜的涂覆可以采用旋涂、刮涂或者辊涂的方式。
例如，在其他的示例中，还可以在平坦化层和像素界定层上形成其他的无机层以作为硬模板，以对具有小角度的区域进行构图，通过实验发现，采 用硬模板相对于光刻胶，硬模板对有机材料侧刻蚀选择比更高，从而更利于实现大角度，经过验证发现采用硬模板时大角度可以做到90°，甚至可以做到大于90°。
例如，在其他的示例中，还可以采用激光照射法对大角度区域的平坦化层和像素界定层进行去除，其中采用衬底基板的主表面朝下的方式，激光源位于衬底基板的下方，采用具有开口的模板对需要采用激光照射的大角度区域的平坦化层和像素界定层进行去除。激光照射去除平坦化层和像素界定层的方式可以实现大角度，例如，该大角度的范围可以为69°-90°。
本公开至少一实施例提供的有机发光二极管显示面板及其制备方法和显示装置，具有以下至少一项有益技术效果：
(1)本公开至少一实施例提供的有机发光二极管显示面板，通过使得像素界定结构的与第一开口邻接的第一侧边与平行于衬底基板的主表面的平面之间具有的第一夹角小于像素界定结构的与第二开口邻接的第二侧边与平行于衬底基板的主表面的平面之间具有的第二夹角，以同时解决设置辅助电极带来的分辨率降低的问题和混光过程中的色偏的问题。
(2)本公开至少一实施例提供的透明显示器件，通过使得像素界定结构的与第二开口邻接的第二侧边与平行于衬底基板的主表面的平面之间具有的第二夹角变大，进而可以增加透光区域的面积，以提高透光区域的空占比，使得透明显示器件整体的透过率增大，且像素界定结构的与第一开口邻接的第一侧边与平行于衬底基板的主表面的平面之间具有的第一夹角保持较小的状态可以降低显示区域出现色偏的风险，从而可以提高透明显示器件的品质。
(3)本公开至少一实施例提供的具有显示功能的有机光电传感器件，通过使得像素界定结构的与第一开口邻接的第一侧边与平行于衬底基板的主表面的平面之间具有的第一夹角小于像素界定结构的与第二开口邻接的第二侧边与平行于衬底基板的主表面的平面之间具有的第二夹角，以在不减小显示区域的面积的基础上，可以增大传感器件的面积以增加光信号量，还可以通过使得像素界定结构的与第一开口邻接的第一侧边与平行于衬底基板的主表面的平面之间具有的第一夹角保持较小的状态，可以降低混光过程中出现色偏的风险。
有以下几点需要说明：
(1)本公开实施例附图只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)为了清晰起见，在用于描述本公开的实施例的附图中，层或区域的厚度被放大或缩小，即这些附图并非按照实际的比例绘制。
(3)在不冲突的情况下，本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (24)

  1. 一种有机发光二极管显示面板,包括：
    衬底基板；
    设置在所述衬底基板上的像素界定层；其中，
    所述像素界定层包括第一开口、第二开口和在所述第一开口和所述第二开口之间的像素界定结构，
    所述第一开口中具有层叠设置的发光层和第一电极，所述第二开口中不具有所述发光层,
    所述像素界定结构的与所述第一开口邻接的第一侧边与平行于所述衬底基板的主表面的平面之间具有第一夹角，所述像素界定结构的与所述第二开口邻接的第二侧边与平行于所述衬底基板的主表面的平面之间具有第二夹角，且所述第一夹角小于所述第二夹角。
  2. 根据权利要求1所述的有机发光二极管显示面板，其中，所述第二开口中设置有与所述第一电极电连接的辅助电极，所述第一电极从所述第一开口延伸至所述第二开口，且所述第一电极在所述第二开口中和所述辅助电极间隔设置。
  3. 根据权利要求2所述的有机发光二极管显示面板，其中，至少在位于所述第二开口中的所述第一电极的远离所述衬底基板的一侧设置有金属氧化物导电层，且所述金属氧化物导电层至少覆盖所述辅助电极的侧表面，以使所述第一电极和所述辅助电极通过所述金属氧化物导电层电连接。
  4. 根据权利要求3所述的有机发光二极管显示面板，其中，所述第一电极在所述发光层的远离所述衬底基板的一侧，在所述第一开口和所述第二开口中的所述第一电极的远离所述衬底基板的一侧设置有所述金属氧化物导电层，且所述金属氧化物导电层从所述第一开口延伸至所述第二开口，并覆盖所述辅助电极的侧表面和所述辅助电极的远离所述衬底基板的表面。
  5. 根据权利要求3或4所述的有机发光二极管显示面板，其中，在所述辅助电极和所述金属氧化物导电层之间设置有第一子电极，所述第一子电极和所述第一电极在同一工艺步骤中形成。
  6. 根据权利要求5所述的有机发光二极管显示面板，其中，在所述第一开口中，在所述第一电极的靠近所述衬底基板的一侧设置有第一有机功能 层，所述第一有机功能层从所述第一开口延伸至所述第二开口，所述第一有机功能层和所述辅助电极在所述第二开口中间隔设置，且在所述辅助电极的远离所述衬底基板的一侧设置有第二有机功能层，所述第一有机功能层和所述第二有机功能层在同一工艺步骤中形成。
  7. 根据权利要求4～6中任一项所述的有机发光二极管显示面板，其中，在所述发光层的靠近所述衬底基板的一侧设置有第二电极，在所述第二电极的靠近所述衬底基板的一侧设置有薄膜晶体管，在所述第二电极和所述薄膜晶体管之间设置有平坦化层，所述第二电极通过设置在所述平坦化层中的第一过孔结构和所述薄膜晶体管的第一源漏电极电连接。
  8. 根据权利要求7所述的有机发光二极管显示面板，其中，所述第二开口中设置有所述平坦化层，所述辅助电极设置在平坦化层的远离衬底基板的一侧。
  9. 根据权利要求7或8所述的有机发光二极管显示面板，其中，所述平坦化层在垂直于所述衬底基板的方向上的厚度大于所述像素界定层在垂直于所述衬底基板的方向上的厚度，所述平坦化层的与所述第二开口邻接的侧边与平行于所述衬底基板的主表面的平面之间具有第三夹角，所述第三夹角的大小大于所述第二夹角的大小。
  10. 根据权利要求7或8所述的有机发光二极管显示面板，其中，所述平坦化层的与所述第二开口邻接的侧边与平行于所述衬底基板的主表面的平面之间具有第三夹角，所述第三夹角的大小等于所述第二夹角的大小。
  11. 根据权利要求7～10中任一项所述的有机发光二极管显示面板，其中，所述平坦化层的与所述第二开口邻接的侧边在所述衬底基板上的正投影的最远离所述第一开口的部分，与所述像素界定结构的所述第二侧边在所述衬底基板上的正投影的最远离所述第一开口的部分之间的距离大于0。
  12. 根据权利要求1所述的有机发光二极管显示面板，其中，所述第一侧边包括沿远离所述衬底基板的方向依次设置的第一子侧边和第二子侧边，所述第一子侧边与平行于所述衬底基板的主表面的平面之间具有第四夹角，所述第二子侧边与平行于所述衬底基板的主表面的平面之间具有第五夹角，且所述第四夹角大于所述第五夹角，所述第四夹角等于所述第一夹角。
  13. 根据权利要求2～12中任一项所述的有机发光二极管显示面板，其中，所述辅助电极包括层叠设置的钛金属层、铝金属层和钛金属层。
  14. 根据权利要求13所述的有机发光二极管显示面板，其中，所述铝金属层在所述衬底基板上的正投影在所述钛金属层在所述衬底基板上的正投影之内。
  15. 根据权利要求4～14中任一项所述的有机发光二极管显示面板，其中，所述第一开口为多个，在相邻的所述第一开口中所述发光层发射的光线的颜色不同。
  16. 根据权利要求1～15中任一项所述的有机发光二极管显示面板，其中，所述第一夹角的取值范围为20°～40°，所述第二夹角的取值范围为65°～90°。
  17. 根据权利要求1所述的有机发光二极管显示面板，其中，所述第二开口为透明显示区域，所述第二开口中未设置所述像素界定层。
  18. 根据权利要求1所述的有机发光二极管显示面板，其中，所述第二开口中设置有指纹识别传感器。
  19. 一种显示装置，包括权利要求1～18中任一项所述的有机发光二极管显示面板。
  20. 一种有机发光二极管显示面板的制备方法,包括：
    提供衬底基板；
    在所述衬底基板上形成像素界定层，其中，所述像素界定层包括第一开口、第二开口和在所述第一开口和所述第二开口之间的像素界定结构；
    在所述第一开口中依次形成发光层和第一电极；
    在所述第二开口中不形成所述发光层；
    所述像素界定结构的与所述第一开口邻接的第一侧边与平行于所述衬底基板的主表面的平面之间具有第一夹角，所述像素界定结构的与所述第二开口邻接的第二侧边与平行于所述衬底基板的主表面的平面之间具有第二夹角，且所述第一夹角小于所述第二夹角。
  21. 根据权利要求20所述的制备方法，还包括：在所述第二开口中形成与所述第一电极电连接的辅助电极。
  22. 根据权利要求20或21所述的制备方法，其中，所述形成像素界定层包括采用掩膜板遮挡对像素界定薄膜进行曝光处理以形成所述第一开口、所述第二开口和在所述第一开口和所述第二开口之间的像素界定结构膜层，且对所述像素界定结构膜层的与所述第一开口邻接的部分的曝光能量小于 对所述像素界定结构膜层的与所述第二开口邻接的部分的曝光能量以形成台阶状的像素界定结构前体。
  23. 根据权利要求22所述的制备方法，还包括：对所述台阶状的像素界定结构前体进行热处理，其中，所述热处理包括将具有第一温度的所述台阶状的像素界定结构前体放置在加热设备中，在所述加热设备中将所述台阶状的像素界定结构前体的温度升高至第二温度。
  24. 根据权利要求20或21所述的制备方法，其中，所述形成像素界定层包括采用第一构图工艺形成所述第一开口、所述第二开口和在所述第一开口和所述第二开口之间的像素界定结构膜层，对所述像素界定结构膜层的与所述第二开口邻接的部分进行第二构图工艺以形成所述像素界定结构。
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CN207052608U (zh) * 2017-08-24 2018-02-27 京东方科技集团股份有限公司 一种显示基板及显示装置
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CN111613643A (zh) * 2019-02-22 2020-09-01 三星显示有限公司 透明显示装置
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