WO2017150284A1 - キャリア付銅箔、並びに配線層付コアレス支持体及びプリント配線板の製造方法 - Google Patents
キャリア付銅箔、並びに配線層付コアレス支持体及びプリント配線板の製造方法 Download PDFInfo
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- WO2017150284A1 WO2017150284A1 PCT/JP2017/006423 JP2017006423W WO2017150284A1 WO 2017150284 A1 WO2017150284 A1 WO 2017150284A1 JP 2017006423 W JP2017006423 W JP 2017006423W WO 2017150284 A1 WO2017150284 A1 WO 2017150284A1
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- layer
- carrier
- copper
- copper foil
- peeling
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4652—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/20—Separation of the formed objects from the electrodes with no destruction of said electrodes
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
- H05K3/025—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates by transfer of thin metal foil formed on a temporary carrier, e.g. peel-apart copper
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
- H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4688—Composite multilayer circuits, i.e. comprising insulating layers having different properties
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
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- H05K2201/0355—Metal foils
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- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
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- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0147—Carriers and holders
- H05K2203/016—Temporary inorganic, non-metallic carrier, e.g. for processing or transferring
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- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1305—Moulding and encapsulation
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- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
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- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
Definitions
- the present invention relates to a copper foil with a carrier, a coreless support with a wiring layer, and a method for producing a printed wiring board.
- multilayered printed wiring boards have been widely used.
- Such a multilayer printed wiring board is used for the purpose of weight reduction and size reduction in many portable electronic devices.
- the multilayer printed wiring board is required to further reduce the thickness of the interlayer insulating layer and further reduce the weight of the wiring board.
- a multilayer printed wiring board manufacturing method using a coreless build-up method has been adopted as a technology that satisfies such requirements.
- the coreless buildup method is a method in which insulating layers and wiring layers are alternately stacked (buildup) to form a multilayer without using a so-called core substrate.
- the coreless buildup method it has been proposed to use a copper foil with a carrier so that the support and the multilayer printed wiring board can be easily peeled off.
- Patent Document 1 Japanese Patent Application Laid-Open No.
- an insulating resin layer is attached to the carrier surface of a carrier-attached copper foil as a support, and a photoresist is processed on the ultrathin copper layer side of the carrier-attached copper foil.
- a process such as pattern electrolytic copper plating, resist removal, forming a build-up wiring layer, peeling a support substrate with a carrier, and removing an ultrathin copper layer.
- Patent Document 2 Japanese Patent No. 4726855 discloses a copper foil with a carrier sheet having a copper foil layer on the surface of a carrier sheet via a bonding interface layer, and the bonding interface layer is formed by physical vapor deposition.
- the metal foil (carrier sheet side) / carbon layer (ultra-thin copper layer side) formed by the method is used.
- the copper foil layer has a thickness of 10 nm to 300 nm by physical vapor deposition on the bonding interface layer. It is disclosed that it is obtained by forming one copper layer and further forming a second copper layer by an electrolytic method. Further, Patent Document 2 discloses that the metal layer constituting the bonding interface layer can be a layer composed of any one of tantalum, niobium, zirconium, nickel, chromium, titanium, iron, silicon, molybdenum, vanadium, and tungsten. Is described.
- Patent Document 3 Japanese Patent No. 4072431 discloses a release layer that is a chromium layer, a diffusion prevention layer that is a layer that easily absorbs light having a wavelength oscillated by a CO 2 gas laser, and an electric layer on the surface of the carrier foil.
- a copper foil with a carrier formed by laminating copper plating layers in this order is disclosed, and a diffusion barrier layer is a single metal made of an element selected from the group consisting of nickel, cobalt, iron, molybdenum, tungsten, aluminum, and phosphorus Or an alloy layer of two or more metals or one or more metal oxide layers made of an element selected from the group consisting of nickel, cobalt, iron, chromium, molybdenum, tungsten, copper, aluminum and phosphorus. Is disclosed.
- an RDL-First is formed by forming a wiring layer and, if necessary, a build-up wiring layer on the surface of the coreless support, and further peeling the support if necessary, and then mounting the chip.
- a construction method called (Redistribution Layer-First) method see, for example, Patent Document 4 (Japanese Patent Laid-Open No. 2015-35551)).
- the RDL-First method is economically advantageous as compared to the Chip-First method, which is a method of sequentially laminating wiring layers on the surface of the chip, in that waste of the chip can be avoided.
- the Chip-First method is a method of sequentially laminating wiring layers on the surface of the chip, in that waste of the chip can be avoided.
- the carrier-attached copper foil is also desired to exhibit peeling resistance in a photoresist development process (for example, a process using an aqueous sodium carbonate solution as a developer) for forming a wiring layer on the surface of the coreless support.
- the inventors of the present invention have excellent peeling resistance against a developer in a photoresist developing process by interposing an intermediate layer made of a predetermined metal between a carrier and a peeling layer of a copper foil with a carrier.
- the present inventors have obtained knowledge that a copper foil with a carrier can be provided that exhibits high stability and can provide excellent stability of the mechanical peel strength of the carrier.
- an object of the present invention is to provide a copper foil with a carrier that exhibits excellent peeling resistance to a developer in a photoresist developing process and can provide excellent stability of the mechanical peeling strength of the carrier. It is to provide.
- a carrier comprising: The carrier-side surface is provided with 1.0 at% or more of at least one metal selected from the group consisting of Ti, Cr, Mo, Mn, W and Ni, and the carrier A surface opposite to the intermediate layer containing Cu at 30 at% or more, A release layer provided on the intermediate layer; An ultrathin copper layer provided on the release layer; A copper foil with a carrier is provided.
- a step of preparing the carrier-attached copper foil according to the above aspect as a support Forming a photoresist layer in a predetermined pattern on the surface of the ultra-thin copper layer; Forming an electrolytic copper plating layer on the exposed surface of the ultrathin copper layer; Peeling the photoresist layer; Removing unnecessary portions of the ultra-thin copper layer by copper flash etching to obtain a coreless support having a wiring layer formed thereon; The manufacturing method of the coreless support body with a wiring layer containing is provided.
- the step of manufacturing the coreless support with a wiring layer by the method according to the above aspect; Forming a buildup layer on the surface of the coreless support with the wiring layer on which the wiring layer is formed to produce a laminate with a buildup layer; Separating the laminate with a buildup layer with the release layer to obtain a multilayer wiring board including the buildup layer; Processing the multilayer wiring board to obtain a printed wiring board; A method for manufacturing a printed wiring board is provided.
- FIG. 4 is a process flowchart for explaining a method of manufacturing a coreless support with a wiring layer or a printed wiring board according to the present invention, and is a diagram showing processes (processes (d) to (f)) subsequent to FIG. 3.
- FIG. 5 is a process flowchart for explaining a method for manufacturing a printed wiring board according to the present invention, and is a diagram showing processes (processes (g) to (i)) subsequent to FIG. 4.
- Copper foil with carrier of the copper foil present invention with a carrier is shown schematically in Figure 1.
- the copper foil 10 with a carrier of this invention is equipped with the carrier 12, the intermediate
- the intermediate layer 14 is provided on the carrier 12, and the surface on the carrier 12 side contains 1.0 at% or more of at least one metal selected from the group consisting of Ti, Cr, Mo, Mn, W and Ni.
- the surface opposite to the carrier 12 is a layer containing 30 at% or more of Cu.
- the release layer 16 is a layer provided on the intermediate layer 14.
- the ultrathin copper layer 18 is a layer made of copper provided on the release layer 16.
- the carrier-attached copper foil 10 of the present invention may further include an antireflection layer 17 between the release layer 16 and the ultrathin copper layer 18. Moreover, it is good also as a structure which equips the both surfaces of the carrier 12 with the above-mentioned various layers in order so that it may become vertically symmetrical.
- the carrier-attached copper foil 10 is not particularly limited as long as it adopts a known layer configuration except that it includes the above-described intermediate layer 14 and, if desired, the antireflection layer 17.
- the intermediate layer 14 made of a predetermined metal between the carrier 12 and the release layer 16 of the copper foil 10 with a carrier, excellent resistance to developer in the photoresist development process.
- the mechanism by which the intermediate layer 14 brings about the above effect is not necessarily clear, but can be considered as follows.
- the copper constituting the surface of the intermediate layer 14 opposite to the carrier 12 provides stable adhesion with a material (for example, carbon) constituting the release layer 16 and is stable.
- a material for example, carbon
- the intermediate layer 14 is made to contain 1.0 at% or more of at least one metal selected from the group consisting of Ti, Cr, Mo, Mn, W and Ni on the surface of the intermediate layer 14 on the carrier 12 side. It is considered that excellent peeling stability between the toner and the carrier 12 and peeling resistance against the developer are advantageously provided.
- the material of the carrier 12 may be any of glass, ceramics, resin, and metal.
- the form of the carrier 12 may be any of a sheet, a film, a plate, and a foil.
- the carrier 12 may be a laminate of these sheets, films, plates, foils and the like.
- the carrier 12 may function as a rigid support such as a glass plate, a ceramic plate, or a metal plate, or may have a non-rigid form such as a metal foil or a resin film.
- Preferred examples of the metal of the carrier 12 include copper, titanium, nickel, stainless steel, and aluminum.
- Preferable examples of the ceramic include alumina, zirconia, silicon nitride, aluminum nitride, and other various fine ceramics.
- the resin include PET resin, PEN resin, aramid resin, polyimide resin, nylon resin, liquid crystal polymer, PEEK resin, polyimide resin, polyamideimide resin, polyethersulfone resin, polyphenylene sulfide resin, PTFE resin, ETFE resin.
- Etc. More preferably, a material having a coefficient of thermal expansion (CTE) of less than 25 ppm / K (typically 1.0 to 23 ppm / K) from the viewpoint of preventing warpage of the coreless support accompanying heating when mounting an electronic device.
- CTE coefficient of thermal expansion
- examples of such materials include various resins as described above (particularly low thermal expansion resins such as polyimide resins and liquid crystal polymers), glass and ceramics.
- the carrier 12 preferably has a Vickers hardness of 100 HV or more, more preferably 150 to 2500 HV.
- the carrier 12 is preferably made of a resin film, glass, or ceramic, more preferably glass or ceramic, and particularly preferably glass.
- a glass sheet When glass is used as the carrier 12, there are advantages such as being able to extremely smooth the surface of the ultrathin copper layer 18 because it is lightweight, has a low coefficient of thermal expansion, is highly insulating, is rigid, and has a flat surface.
- the carrier when the carrier is glass, after forming the wiring layer on the surface of the coreless support, it has excellent visibility contrast with copper plating when performing image inspection, and surface flatness (coplanarity) that is advantageous when mounting electronic devices Advantages of having chemical resistance in the separation of laminates with buildup layers, which will be described later, having chemical resistance in desmear and various plating processes in the printed wiring board manufacturing process There is.
- the glass constituting the carrier 12 include quartz glass, borosilicate glass, alkali-free glass, soda lime glass, aminosilicate glass, and combinations thereof, and alkali-free glass is particularly preferable.
- the alkali-free glass is a glass mainly containing silicon dioxide, aluminum oxide, boron oxide, and alkaline earth metal oxides such as calcium oxide and barium oxide, and further containing boric acid and substantially no alkali metal. That is.
- This alkali-free glass has a low and stable thermal expansion coefficient in the range of 3 to 5 ppm / K in a wide temperature range from 0 ° C to 350 ° C, so that the glass warpage is minimized when a semiconductor chip is mounted as an electronic element. There is an advantage that it can be limited.
- the thickness of the carrier is preferably 100 to 2000 ⁇ m, more preferably 300 to 1800 ⁇ m, still more preferably 400 to 1100 ⁇ m. When the thickness is within such a range, it is possible to reduce the thickness of the printed wiring board and reduce the warpage that occurs when mounting electronic components while ensuring an appropriate strength that does not hinder handling.
- the surface on the intermediate layer 14 side of the carrier 12 preferably has an arithmetic average roughness Ra of 0.1 to 70 nm, more preferably 0.5 to 60 nm, measured according to JIS B 0601-2001. More preferably, it is 1.0 to 50 nm, particularly preferably 1.5 to 40 nm, and most preferably 2.0 to 30 nm.
- the smaller the arithmetic average roughness the more desirable the arithmetic average roughness Ra can be obtained on the surface of the ultrathin copper layer 18 opposite to the release layer 16 (the outer surface of the ultrathin copper layer 18).
- the line / space (L / S) is highly refined to a level of 13 ⁇ m or less / 13 ⁇ m or less (for example, 12 ⁇ m / 12 ⁇ m to 2 ⁇ m / 2 ⁇ m). It is suitable for forming the formed wiring pattern.
- the intermediate layer 14 has at least one kind selected from the group consisting of Ti, Cr, Mo, Mn, W, and Ni on the surface on the carrier 12 side in order to ensure adhesion between the carrier 12 and the intermediate layer 14. It is a metal containing metal (hereinafter referred to as metal M).
- metal M a metal containing metal
- the content of the metal M on the surface on the carrier 12 side of the intermediate layer 14 is preferably 1.0 atomic% or more, more preferably 3.0 atomic% or more, and further preferably 4.0 atomic% or more.
- This metal may be a pure metal or an alloy. Therefore, the upper limit of the content of the metal M is not particularly limited, and may be 100 atomic%.
- the surface of the intermediate layer 14 opposite to the carrier 12 is a metal containing Cu.
- the Cu content on the surface of the intermediate layer 14 opposite to the carrier 12 is preferably 30 atomic% or more, more preferably 40%. Atomic% or more, more preferably 50 atomic% or more.
- the upper limit of the Cu content is not particularly limited, but may be 100 atomic%.
- the thickness of the intermediate layer 14 is preferably 5 to 1000 nm, more preferably 10 to 800 nm, still more preferably 12 to 500 nm, and particularly preferably 15 to 400 nm. This thickness is a value measured by analyzing the cross section of the layer with an energy dispersive X-ray spectrometer (TEM-EDX) of a transmission electron microscope.
- TEM-EDX energy dispersive X-ray spectrometer
- the intermediate layer 14 may have a single-layer configuration as shown in FIG. 1, or may have a configuration of two or more layers as shown in FIG.
- the intermediate layer 14 includes an adhesion metal layer 14a and a peeling assisting layer 14b as shown in FIG.
- the adhesion metal layer 14a is a layer that is provided on the carrier 12 and is composed of at least one metal selected from the group consisting of Ti, Cr, Mo, Mn, W, and Ni.
- the peeling auxiliary layer 14b is a layer provided on the adhesion metal layer 14a and made of copper.
- the mechanism by which the combination of the adhesion metal layer 14a and the peeling assisting layer 14b brings about the above effect is not necessarily clear, but can be considered as follows. That is, the copper constituting the peeling assist layer 14b provides lower adhesion to the material constituting the peeling layer 16 (for example, carbon) and contributes to stable peeling, whereas the carrier (for example, glass or ceramics). Adhesiveness and peelability may become unstable.
- the adhesion metal layer 14a is composed of at least one metal selected from the group consisting of Ti, Cr, Mo, Mn, W, and Ni in order to ensure adhesion between the carrier 12 and the peeling assist layer 14b. It is preferably a layer, and may be a pure metal or an alloy. Among these, when the adhesion between the carrier 12 and the adhesion metal layer 14a and the peeling auxiliary layer 14b is ensured, the ultrathin copper layer is peeled off in the process of forming the coreless support wiring layer described later, and the coreless support is peeled off.
- the adhesion metal layer 14a is most preferably composed of Ti from the viewpoint of significantly preventing peeling of the adhesion metal layer 14a and the peeling auxiliary layer 14b, which are the metal on the carrier side.
- the metal constituting the adhesion metal layer 14a may contain inevitable impurities caused by raw material components, film formation processes, and the like. Further, although not particularly limited, when exposed to the atmosphere after the formation of the adhesion metal layer 14a, the presence of oxygen mixed therein is allowed.
- the adhesion metal layer 14a is preferably a layer formed by a vapor phase method such as sputtering.
- the adhesion metal layer 14a is particularly preferably a layer formed by a magnetron sputtering method using a metal target in terms of improving the uniformity of the film thickness distribution.
- the thickness of the adhesion metal layer 14a is preferably 5 to 500 nm, more preferably 10 to 300 nm, still more preferably 18 to 200 nm, and particularly preferably 20 to 100 nm. This thickness is a value measured by analyzing the cross section of the layer with an energy dispersive X-ray spectrometer (TEM-EDX) of a transmission electron microscope.
- TEM-EDX energy dispersive X-ray spectrometer
- the peeling auxiliary layer 14b is a layer made of copper. Copper constituting the peeling assisting layer 14b may contain inevitable impurities due to raw material components, film forming steps, and the like.
- the peeling auxiliary layer 14b is at least one selected from the group consisting of Si, Al, Ni, Mn, Mg, Nd, Nb, Ag, Zn, Sn, Bi, and Fe as long as the carrier peeling property is not impaired.
- the metal may be contained.
- the peeling auxiliary layer can also be referred to as a layer mainly containing copper.
- the content of Cu element in the peeling assisting layer 14b is preferably 50 to 100 atomic%, more preferably 60 to 100 atomic%, still more preferably 70 to 100 atomic%, and particularly preferably 80 to 100 atomic%. 100 atomic%, most preferably 90 to 100 atomic%.
- the peeling assist layer 14b is preferably a layer formed by a vapor phase method such as sputtering.
- the peeling auxiliary layer 14b is particularly preferably a layer formed by a magnetron sputtering method using a copper target from the viewpoint that the uniformity of the film thickness distribution can be improved.
- the thickness of the peeling assist layer 14b is preferably 5 to 500 nm, more preferably 10 to 400 nm, still more preferably 15 to 300 nm, and particularly preferably 20 to 200 nm. This thickness is a value measured by analyzing the cross section of the layer with an energy dispersive X-ray spectrometer (TEM-EDX) of a transmission electron microscope.
- TEM-EDX energy dispersive X-ray spectrometer
- another intervening layer may exist between the adhesion metal layer 14a and the peeling auxiliary layer 14b.
- the constituent material of the intervening layer include an alloy of at least one metal selected from the group consisting of Ti, Cr, Mo, Mn, W and Ni and Cu.
- the intermediate layer 14 may be an intermediate alloy layer. That is, the intermediate layer 14 can have a single layer configuration.
- the intermediate layer 14 as the intermediate alloy layer has a content of at least one metal selected from the group consisting of Ti, Cr, Mo, Mn, W and Ni (hereinafter referred to as metal M) of 1.0 at% or more.
- metal M metal selected from the group consisting of Ti, Cr, Mo, Mn, W and Ni
- the metal M a content of at least one metal selected from the group consisting of Ti, Cr, Mo, Mn, W and Ni
- the metal constituting the intermediate alloy layer is a copper alloy of the metal M and Cu from the viewpoint of ensuring the adhesion between the
- an alloy of a metal containing at least one metal selected from the group consisting of Ti, Mo, and Mn and Cu is more preferable.
- the content of metal M in the intermediate alloy layer is preferably 1.0 atomic% or more, more preferably 3.0 atomic% or more, and further preferably 5.0 atomic% or more.
- the metal M content rate is preferably 30 atomic percent or less, more preferably 20 atomic percent or less.
- the Cu content in the intermediate alloy layer is preferably 30 atomic% or more, more preferably 40 atomic% or more, and further preferably 50 atomic% or more.
- the upper limit of the Cu content in the intermediate alloy layer is not particularly limited, but the Cu content is preferably 99.5 atomic% or less, more preferably 97.0 atomic% or less, and even more preferably 96.0 atomic% or less. It is.
- the intermediate alloy layer is preferably a layer formed by a vapor phase method such as sputtering.
- the intermediate alloy layer is particularly preferably a layer formed by a magnetron sputtering method using a copper alloy target because the uniformity of the film thickness distribution can be improved.
- the thickness of the intermediate alloy layer is preferably 5 to 500 nm, more preferably 10 to 400 nm, still more preferably 15 to 300 nm, and particularly preferably 20 to 200 nm.
- This thickness is a value measured by analyzing the cross section of the layer with an energy dispersive X-ray spectrometer (TEM-EDX) of a transmission electron microscope.
- another intervening layer may exist inside the intermediate alloy layer.
- the constituent material of the intervening layer include an alloy of at least one metal selected from the group consisting of Ti, Cr, Mo, Mn, W and Ni and Cu.
- the release layer 16 is a layer that enables the carrier 12 (which includes the intermediate layer 14) to be peeled off.
- the release layer 16 may be either an organic release layer or an inorganic release layer.
- organic components used in the organic release layer include nitrogen-containing organic compounds, sulfur-containing organic compounds, carboxylic acids and the like.
- nitrogen-containing organic compounds include triazole compounds and imidazole compounds.
- inorganic components used in the inorganic release layer include at least one metal oxide of Ni, Mo, Co, Cr, Fe, Ti, W, P, and Zn, a carbon layer, and the like.
- the release layer 16 is preferably a layer mainly containing carbon from the viewpoint of ease of peeling, film formation, and the like, more preferably a layer mainly made of carbon or hydrocarbon, more preferably. It consists of amorphous carbon, which is a hard carbon film.
- the release layer 16 (that is, the carbon layer) preferably has a carbon concentration measured by XPS of 60 atomic% or more, more preferably 70 atomic% or more, still more preferably 80 atomic% or more, and particularly preferably 85. It is at least atomic percent.
- the upper limit value of the carbon concentration is not particularly limited, and may be 100 atomic%, but 98 atomic% or less is realistic.
- the release layer 16 (particularly the carbon layer) can contain inevitable impurities (for example, oxygen, carbon, hydrogen, etc. derived from the surrounding environment such as the atmosphere).
- metal atoms may be mixed into the release layer 16 (particularly the carbon layer) due to the method of forming the antireflection layer 17 or the ultrathin copper layer 18.
- Carbon has low interdiffusion and reactivity with carriers, and prevents metal bonds from forming due to high-temperature heating between the copper foil layer and the bonding interface even when subjected to press processing at temperatures exceeding 300 ° C. Thus, it is possible to maintain a state where the carrier can be easily peeled and removed.
- the release layer 16 is also a layer formed by a vapor phase method such as sputtering, from the viewpoint of suppressing excessive impurities in the amorphous carbon and the continuous productivity with the formation of the intermediate layer 14 described above.
- the thickness of the release layer 16 is preferably 1 to 20 nm, more preferably 1 to 10 nm. This thickness is a value measured by analyzing the cross section of the layer with an energy dispersive X-ray spectrometer (TEM-EDX) of a transmission electron microscope.
- TEM-EDX energy dispersive X-ray spectrometer
- the antireflection layer 17 provided if desired is a layer having a function of preventing light reflection.
- the antireflection layer 17 is made of at least one metal selected from the group consisting of Cr, W, Ta, Ti, Ni and Mo, and at least the surface on the ultrathin copper layer 18 side is an aggregate of metal particles. It is.
- the antireflection layer 17 may have a layer structure composed entirely of an aggregate of metal particles, or a plurality of layers including a layer composed of an aggregate of metal particles and a non-particulate layer below the layer. It may be a layered structure.
- the aggregate of metal particles constituting the surface of the antireflection layer 17 on the ultrathin copper layer 18 side exhibits a desirable dark color due to its metallic material and granular form, and the dark color is a wiring layer composed of copper.
- the antireflection layer 17 is also excellent in moderate adhesion and peelability with the release layer 16, adhesiveness with the ultrathin copper layer 18, and excellent in resistance to peeling with respect to the developer during the formation of the photoresist layer.
- the glossiness Gs (60 °) of the surface of the antireflection layer 17 on the ultrathin copper layer 18 side is preferably 500 or less, more preferably 450 or less, and still more preferably. Is 400 or less, particularly preferably 350 or less, and most preferably 300 or less. Since the lower limit of the glossiness Gs (60 °) is better if it is low, it is not particularly limited. However, the glossiness Gs (60 °) of the surface of the antireflection layer 17 on the ultrathin copper layer 18 side is realistic. 100 or more, and more realistically 150 or more.
- the specular gloss Gs (60 °) by image analysis of the roughened particles can be measured using a commercially available gloss meter in accordance with JIS Z 8741-1997 (mirror gloss-measurement method).
- an antireflection layer 17 that is made of a predetermined metal between the release layer 16 and the ultrathin copper layer 18 and at least the surface on the ultrathin copper layer 18 side is an aggregate of metal particles.
- the antireflection layer exhibits excellent chemical resistance against the copper flash etchant during the formation of the wiring layer on the surface of the coreless support, and 2) during image inspection after copper flash etching (for example, automatic image inspection (AOI)) It is possible to provide a copper foil with a carrier that provides excellent visibility of the wiring layer due to the contrast with the antireflection layer.
- At least one metal selected from Cr, W, Ta, Ti, Ni and Mo constituting the antireflection layer 17 has a property that it does not dissolve in the copper flash etching solution. As a result, it is possible to exhibit excellent chemical resistance against the copper flash etching solution.
- the aggregate of metal particles constituting the surface of at least the ultrathin copper layer 18 side of the antireflection layer 17 exhibits a desirable dark color due to its metallic material and granular form. Provides the desired visual contrast with the wiring layer composed of copper, which results in improved visibility in image inspection (eg, automatic image inspection (AOI)).
- AOI automatic image inspection
- etching solution having high selectivity can be used as an etching solution for flash-etching at least one metal selected from Cr, W, Ta, Ti, Ni and Mo constituting the antireflection layer 17.
- the surface of the antireflection layer 17 on the ultrathin copper layer 18 side has a projected area equivalent circle diameter determined by SEM image analysis of 10 to 10 mm. It is preferably composed of an aggregate of metal particles having a thickness of 100 nm, more preferably 25 to 100 nm, and even more preferably 65 to 95 nm.
- a projected area equivalent circle diameter can be measured by photographing the surface of the antireflection layer 17 with a scanning electron microscope at a predetermined magnification (for example, 50000 times) and analyzing the obtained SEM image.
- the antireflection layer 17 is composed of at least one metal selected from Cr, W, Ta, Ti, Ni and Mo, preferably at least one metal selected from Ta, Ti, Ni and Mo, More preferably, it is made of at least one metal selected from Ti, Ni and Mo, and most preferably Ti. These metals may be pure metals or alloys. In any case, it is preferred that these metals are essentially unoxidized (essentially not metal oxides) because they exhibit a desirable dark color that improves visual contrast with Cu, specifically reflective
- the oxygen content of the prevention layer 17 is preferably 0 to 15 atomic%, more preferably 0 to 13 atomic%, still more preferably 1 to 10 atomic%.
- the metal has a property that it does not dissolve in the copper flash etching solution, and as a result, can exhibit excellent chemical resistance with respect to the copper flash etching solution.
- the thickness of the antireflection layer 17 is preferably 1 to 500 nm, more preferably 10 to 300 nm, still more preferably 20 to 200 nm, and particularly preferably 30 to 150 nm.
- the ultrathin copper layer 18 may be manufactured by any method, for example, wet film formation methods such as electroless copper plating and electrolytic copper plating, physical vapor deposition methods such as sputtering and vacuum deposition, It may be a copper foil formed by vapor deposition or a combination thereof.
- a particularly preferable ultrathin copper layer is a copper layer formed by a sputtering method or a vapor phase method such as vacuum deposition from the viewpoint of easily adapting to a fine pitch by ultrathinning, and most preferably manufactured by a sputtering method. Copper layer.
- the ultra-thin copper layer is preferably a non-roughened copper layer, but pre-roughening, soft etching treatment, cleaning treatment, oxidation treatment, as long as it does not hinder the formation of wiring patterns during printed wiring board production.
- the secondary roughening may be caused by the reduction treatment.
- the thickness of the ultrathin copper layer 18 is not particularly limited, but is preferably 50 to 3000 nm, more preferably 70 to 2500 nm, still more preferably 80 to 2000 nm, particularly preferably in order to cope with the fine pitch as described above. Is from 90 to 1500 nm, particularly preferably from 120 to 1000 nm, most preferably from 150 to 500 nm.
- An ultrathin copper layer having a thickness in such a range is preferably manufactured by sputtering from the viewpoint of in-plane uniformity of film thickness and productivity in the form of a sheet or a roll.
- the line / space (L / S) is 13 ⁇ m or less / 13 ⁇ m or less (for example, 12 ⁇ m / 12 ⁇ m to 2 ⁇ m / 2 ⁇ m) as the arithmetic average roughness is smaller. It is suitable for forming a highly miniaturized wiring pattern to such a degree.
- the layer 18, for example, the ultrathin copper layer 18 and the antireflection layer 17) extend to the end face of the carrier 12 to cover the end face. That is, it is preferable that not only the surface of the carrier 12 but also the end surface is covered with at least the ultrathin copper layer 18. By covering the end face, it is possible to prevent the chemical solution from entering the carrier 12 in the printed wiring board process, and chipping by peeling at the side end when handling the coreless support (for example, when being conveyed by a roller).
- the film thickness of the adhesion metal layer 14a on the end face of the carrier 12 is preferably 2 to 350 nm, more preferably 3 to 220 nm, and still more preferably 5 It is ⁇ 150 nm, particularly preferably 6 to 70 nm.
- the end face thickness of the peeling assist layer 14b is preferably 2 to 350 nm, more preferably 3 to 220 nm, still more preferably 5 to 150 nm, and particularly preferably 6 to 70 nm.
- the end face thickness of the intermediate layer 14 as the intermediate alloy layer is preferably 2 to 350 nm, more preferably 3 to 220 nm, still more preferably 5 to 150 nm, and particularly preferably 6 to 70 nm.
- the end face thickness of the release layer 16 is preferably 0 to 15 nm, more preferably 0 to 3 nm, still more preferably 0 to 1 nm, particularly preferably 0 to 0.5 nm, and most preferably 0 nm. That is, it is most preferable that the release layer 16 is not formed on the carrier end face.
- the end face thickness of the antireflection layer 17 is preferably 2 to 350 nm, more preferably 3 to 220 nm, still more preferably 5 to 150 nm, and particularly preferably 6 to 70 nm.
- the end face thickness of the ultrathin copper layer 18 is preferably 15 to 2800 nm, more preferably 20 to 1800 nm, still more preferably 25 to 1400 nm, particularly preferably 27 to 1350 nm, particularly more preferably 35 to 700 nm, and most preferably 45 to 350 nm.
- the covering region on the end surface of the carrier 12 is preferably a region of 0.1 mm or more in the thickness direction (that is, a direction perpendicular to the carrier surface) from the surface of the carrier 12, more preferably a region of 0.2 mm or more, More preferably, the entire end face of the carrier 12 is covered.
- the copper foil with carrier 10 is prepared by preparing the carrier 12 described above, and on the carrier 12, an intermediate layer 14 (for example, two layers of an adhesion metal layer 14a and a peeling auxiliary layer 14b, or an intermediate layer). 1 layer of an alloy layer), a release layer 16, an antireflection layer 17, and an ultrathin copper layer 18 if desired.
- the formation of each of the intermediate layer 14, the release layer 16, the antireflection layer 17 (if present) and the ultrathin copper layer 18 is performed by a vapor phase method from the viewpoint of easily supporting fine pitch by ultrathinning. Is preferred.
- the vapor phase method include a sputtering method, a vacuum deposition method, and an ion plating method.
- the film thickness can be controlled in a wide range of 0.05 nm to 5000 nm, and the film thickness uniformity over a wide width or area.
- the sputtering method is most preferable because it can be secured.
- the production efficiency is remarkably increased by forming all of the intermediate layer 14, the release layer 16, the antireflection layer 17 (when present), and the ultrathin copper layer 18 by sputtering.
- the film formation by the vapor phase method is not particularly limited as long as it is performed according to known conditions using a known vapor deposition apparatus.
- the sputtering method may be any of various known methods such as magnetron sputtering, dipole sputtering, and counter target sputtering. It is preferable at a high point. Sputtering may be performed by any power source of DC (direct current) and RF (high frequency). Further, a plate-type target whose target shape is widely known can be used, but it is desirable to use a cylindrical target from the viewpoint of target use efficiency.
- each layer of the intermediate layer 14 for example, two layers of the adhesion metal layer 14a and the peeling auxiliary layer 14b, or one layer of the intermediate alloy layer
- the peeling layer 16 the antireflection layer 17 (if present)
- the ultrathin copper layer 18 The film formation by the vapor phase method (preferably sputtering method) will be described.
- the deposition of the adhesion metal layer 14a by the vapor phase method is performed by magnetron sputtering in a non-oxidizing atmosphere using a target composed of at least one metal selected from the group consisting of Ti, Cr, and Ni. Is preferable in that the uniformity of film thickness distribution can be improved.
- the purity of the target is preferably 99.9% or higher.
- an inert gas such as argon gas is preferably used.
- the flow rate of the argon gas is not particularly limited as long as it is appropriately determined according to the sputtering chamber size and film forming conditions.
- the pressure during film formation is in the range of 0.1 to 20 Pa from the viewpoint of continuous film formation without malfunction such as abnormal discharge or defective plasma irradiation.
- This pressure range may be set by adjusting the deposition power and the flow rate of argon gas according to the device structure, capacity, vacuum pump exhaust capacity, rated capacity of the deposition power source, and the like.
- the sputtering power may be set as appropriate within a range of 0.05 to 10.0 W / cm 2 per unit area of the target in consideration of film thickness uniformity, productivity, and the like.
- the film formation by the vapor phase method of the peeling assist layer 14b is preferably performed by magnetron sputtering in a non-oxidizing atmosphere using a copper target in terms of improving the film thickness distribution uniformity.
- the purity of the copper target is preferably 99.9% or more.
- an inert gas such as argon gas is preferably used.
- the flow rate of the argon gas is not particularly limited as long as it is appropriately determined according to the sputtering chamber size and film forming conditions.
- the pressure during film formation is in the range of 0.1 to 20 Pa from the viewpoint of continuous film formation without malfunction such as abnormal discharge or defective plasma irradiation.
- This pressure range may be set by adjusting the deposition power and the flow rate of argon gas according to the device structure, capacity, vacuum pump exhaust capacity, rated capacity of the deposition power source, and the like.
- the sputtering power may be set as appropriate within a range of 0.05 to 10.0 W / cm 2 per unit area of the target in consideration of film thickness uniformity, productivity, and the like.
- the intermediate layer 14 uses an alloy target of at least one metal M selected from the group consisting of Ti, Cr, Mo, Mn, W, and Ni and Cu, Performing by magnetron sputtering in a non-oxidizing atmosphere is preferable in terms of improving the film thickness distribution uniformity.
- the purity of the copper target is preferably 99.9% or more.
- an inert gas such as argon gas is preferably used.
- the flow rate of the argon gas is not particularly limited as long as it is appropriately determined according to the sputtering chamber size and film forming conditions.
- the pressure during film formation is in the range of 0.1 to 20 Pa from the viewpoint of continuous film formation without malfunction such as abnormal discharge or defective plasma irradiation.
- This pressure range may be set by adjusting the deposition power and the flow rate of argon gas according to the device structure, capacity, vacuum pump exhaust capacity, rated capacity of the deposition power source, and the like.
- the sputtering power may be set as appropriate within a range of 0.05 to 10.0 W / cm 2 per unit area of the target in consideration of film thickness uniformity, productivity, and the like.
- Film formation of the release layer 16 by a vapor phase method is preferably performed in an inert atmosphere such as argon using a carbon target.
- the carbon target is preferably composed of graphite, but may contain inevitable impurities (for example, oxygen and carbon derived from the surrounding environment such as the atmosphere).
- the purity of the carbon target is preferably 99.99% or more, more preferably 99.999% or more.
- the pressure during film formation is within a range of 0.1 to 2.0 Pa from the viewpoint of continuous film formation without abnormal operation such as abnormal discharge or defective plasma irradiation.
- This pressure range may be set by adjusting the deposition power and the flow rate of argon gas according to the device structure, capacity, vacuum pump exhaust capacity, rated capacity of the deposition power source, and the like.
- the sputtering power may be set as appropriate within a range of 0.05 to 10.0 W / cm 2 per unit area of the target in consideration of film thickness uniformity, productivity, and the like.
- the antireflection layer 17 is preferably formed by magnetron sputtering using a target composed of at least one metal selected from the group consisting of Cr, W, Ta, Ti, Ni and Mo. .
- the purity of the target is preferably 99.9% or higher.
- the film formation of the antireflection layer 17 by magnetron sputtering is preferably performed under an inert gas atmosphere such as argon and at a pressure of 1 to 20 Pa.
- the sputtering pressure is more preferably 2 to 18 Pa, still more preferably 3 to 15 Pa.
- Such a sputtering pressure is significantly higher than the sputtering pressure normally employed, thereby allowing the aggregate of the desired form of metal particles to be in-plane without essentially oxidizing the surface of the antireflection layer 17. It can be formed uniformly. According to the sputtering conditions, a desirable projected area equivalent circle diameter and a desirable glossiness Gs (60 °) can be provided. In addition, there is an advantage that the film can be continuously formed without malfunction such as abnormal discharge and plasma irradiation defect.
- the pressure range may be controlled by adjusting the deposition power and the flow rate of argon gas according to the device structure, capacity, vacuum pump exhaust capacity, rated power supply capacity, and the like.
- the flow rate of the argon gas is not particularly limited as long as it is appropriately determined according to the sputtering chamber size and film forming conditions.
- the sputtering power may be appropriately set within the range of 1.0 to 15.0 W / cm 2 per unit area of the target in consideration of film thickness uniformity, productivity, and the like.
- the carrier temperature during film formation is preferably adjusted in the range of 25 to 300 ° C, more preferably in the range of 40 to 200 ° C, and still more preferably in the range of 50 to 150 ° C.
- Film formation of the ultrathin copper layer 18 by a vapor phase method is preferably performed in an inert atmosphere such as argon using a copper target.
- the copper target is preferably composed of metallic copper, but may contain unavoidable impurities.
- the purity of the copper target is preferably 99.9% or more, more preferably 99.99%, and still more preferably 99.999% or more.
- a stage cooling mechanism may be provided during sputtering.
- the pressure during film formation is in the range of 0.1 to 2.0 Pa from the viewpoint of stable film formation without malfunction such as abnormal discharge or defective plasma irradiation.
- This pressure range may be set by adjusting the deposition power and the flow rate of argon gas according to the device structure, capacity, vacuum pump exhaust capacity, rated capacity of the deposition power source, and the like.
- the sputtering power may be set as appropriate within a range of 0.05 to 10.0 W / cm 2 per unit area of the target in consideration of film thickness uniformity, productivity, and the like.
- the formation of the intermediate layer 14, the release layer 16, the antireflection layer 17 and / or the ultrathin copper layer 18 on the end surface of the carrier 12 is performed in a state where the end surface of the carrier 12 is exposed on the stage in the sputtering method described above. It can be easily carried out by forming a film. At this time, the film is typically formed on the end face of the carrier 12 with a thickness (end face thickness) of 20% to 70% of the thickness of the layer formed on the surface of the carrier 12. On the other hand, when forming an extremely thin thickness on the end face, such as when the release layer 16 is formed, it is preferable that the side end of the carrier 12 be shielded and sputtered. Examples of this shielding method include shielding with a masking tape and shielding with a masking plate.
- the copper foil with carrier of the present invention may be provided in the form of a laminated plate for coreless support. That is, according to the preferable aspect of this invention, the laminated board for coreless support bodies provided with the said copper foil with a carrier is provided. The following two forms are mentioned as the form of the coreless support laminate. (I) The first form of the coreless support laminate is the form of the carrier-attached copper foil itself.
- the carrier-added copper foil 10 in which the intermediate layer 14 / the peeling layer 16 / the antireflection layer 17 / the ultrathin copper layer 18 are laminated in this order on at least one surface of the carrier 12, It includes a form in which the intermediate layer 14 / the release layer 16 / the antireflection layer 17 / the ultrathin copper layer 18 are laminated in this order on both sides.
- this form is established when the carrier alone is rigid and can function as a support, such as when the carrier 12 is a glass plate or a metal plate.
- a second form of the coreless support laminate is a form in which an adhesive layer is provided on the side opposite to the release layer 16 of the carrier 12 (that is, the outer surface of the carrier 12).
- the carrier 12 is made of a material having no rigidity such as a metal foil or a resin film.
- the adhesive layer include a resin layer, a fiber-reinforced prepreg (such as glass), and the like.
- the layer configuration of the antireflection layer 17 / ultra thin copper layer 18 can be adopted.
- the intermediate layer 14 may have two layers of the adhesion metal layer 14a / the peeling auxiliary layer 14b in order from the carrier 12 side, or may be a single intermediate alloy layer as described above. It is.
- a coreless support with wiring layer can be manufactured using the copper foil with a carrier of the present invention.
- the preferable manufacturing method of the coreless support body with a wiring layer is demonstrated.
- the manufacturing method of this coreless support with wiring layer includes (1) a preparation process of a copper foil with a carrier, (2) a formation process of a photoresist layer, (3) a formation process of an electrolytic copper plating layer, and (4) A photoresist layer peeling step, and (5) a flash etching step.
- a method for producing a coreless support with a wiring layer including these steps is schematically shown in FIGS.
- the copper foil with carrier 10 is prepared as a support (see FIG. 3A).
- the copper foil 10 with a carrier can be prepared with the form of the laminated board for coreless support bodies. That is, as described above, it may be provided in the form of the carrier-attached copper foil itself, or a form having an adhesive layer on the side opposite to the release layer 16 of the carrier 12 (that is, the outer surface of the carrier 12 (for example, Ultra-thin copper layer 18 / Antireflection layer 17 / Release layer 16 / Intermediate layer 14 / Carrier 12 / Adhesive layer (not shown) / Carrier 12 / Intermediate layer 14 / Release layer 16 / As required
- the antireflection layer 17 / the ultrathin copper layer 18 may be prepared.
- the intermediate layer 14 may have two layers of the adhesion metal layer 14a / the peeling assisting layer 14b in this order from the carrier 12 side as shown in FIGS. 3 and 4, or as shown in FIG.
- One intermediate layer 14 may have two layers of the adh
- a photoresist layer 20 is formed in a predetermined pattern on the surface of the ultrathin copper layer 18 (see FIG. 3B).
- the photoresist is preferably a photosensitive film, such as a photosensitive dry film.
- the photoresist layer 20 may be provided with a predetermined wiring pattern by exposure and development.
- the carrier-provided copper foil 10 of the present invention includes the intermediate layer 14, thereby exhibiting excellent peel resistance with respect to a developer (for example, an aqueous sodium carbonate solution).
- An electrolytic copper plating layer 22 is formed on the exposed surface of the ultrathin copper layer 18 (that is, the portion not masked by the photoresist layer 20) (see FIG. 3C).
- the electrolytic copper plating may be performed by a known method and is not particularly limited.
- the photoresist layer 20 is stripped.
- the electrolytic copper plating layer 22 remains in the form of a wiring pattern, and the ultrathin copper layer 18 where the wiring pattern is not formed is exposed.
- Copper flash etching step Unnecessary portions of the ultrathin copper layer 18 are removed by copper flash etching to obtain a coreless support on which the wiring layer 24 is formed (hereinafter referred to as a coreless support 26 with a wiring layer). At this time, when the copper foil 10 with a carrier has the antireflection layer 17, unnecessary portions of the ultrathin copper layer 18 are removed by copper flash etching to expose the antireflection layer 17 and remain (that is, the antireflection layer). 17 stops the copper flash etching).
- This flash etching solution uses a sulfuric acid / hydrogen peroxide mixture solution or a solution containing at least one of sodium persulfate and potassium persulfate while avoiding excessive etching of the electrolytic copper plating layer 22.
- the electroplated copper layer 22 / ultra-thin copper layer 18 remains in the wiring pattern, and the antireflection layer 17 in the portion not forming the wiring pattern is not dissolved by the flash etching solution. It remains and is exposed on the surface.
- the antireflection layer 17 since at least one metal selected from Cr, W, Ta, Ti, Ni and Mo constituting the antireflection layer 17 has a property of not dissolving in the copper flash etching solution, the copper flash etching is performed. Excellent chemical resistance to the liquid. That is, the antireflection layer 17 is not removed by the copper flash etching, but is left exposed for the next image inspection process.
- Image inspection, etc. After the copper flash etching, it is preferable to perform an image inspection process on the coreless support 26 with a wiring layer (specifically, the wiring layer 24).
- a wiring layer specifically, the wiring layer 24.
- an optical automatic appearance inspection (AOI) apparatus is used to irradiate predetermined light from a light source to obtain a binarized image of a wiring pattern, and the binarized image and design data. This is done by trying pattern matching with an image and evaluating match / mismatch between them. If present, this image inspection is preferably performed with the antireflection layer 17 exposed.
- AOI optical automatic appearance inspection
- the aggregate of metal particles constituting the surface of the antireflection layer 17 exhibits a desirable dark color due to its metallic material and granular form, and the dark color is desirable between the wiring layer 24 composed of copper.
- the contrast in the image inspection for example, automatic image inspection (AOI) is improved.
- the process of mounting the chip after forming the wiring layer 24 in this way is a technique called RDL-First method. According to this method, it is possible to perform image inspection of the wiring layer on the surface of the coreless support and each build-up wiring layer laminated after that before mounting the chip, so avoid the defective part of each wiring layer. Chips can be mounted only on non-defective parts.
- the RDL-First method is economically advantageous as compared to the Chip-First method, which is a method of sequentially laminating wiring layers on the surface of the chip, in that waste of the chip can be avoided.
- the copper foil 10 with a carrier of the present invention has the antireflection layer 17
- the contrast between the surface of the electrolytic copper plating layer 22 and the surface of the antireflection layer 17 in the image inspection can be sufficiently obtained, and the image inspection is performed.
- the binarized image of the wiring pattern acquired by an optical automatic appearance inspection (AOI) apparatus becomes more accurate and clear.
- AOI optical automatic appearance inspection
- the printed wiring board manufacturing process (particularly the RDL-First method), it is possible to perform image inspection on the wiring layer before chip mounting with high accuracy, thereby improving the product yield.
- the electronic element 28 mounted on the wiring layer of the coreless support 26 that is assumed as an optional step, a semiconductor element, a chip capacitor, a resistor, and the like can be given.
- the electronic element mounting method include a flip chip mounting method and a die bonding method.
- the flip chip mounting method is a method of bonding the mounting pad of the electronic element 28 and the wiring layer 24 on the coreless support 26.
- NCF Non-Conductive Film
- the joining is preferably performed using a low melting point metal such as solder, but an anisotropic conductive film or the like may be used.
- the die bonding bonding method is a method in which the surface opposite to the mounting pad surface of the electronic element 28 is bonded to the wiring layer 24 on the surface of the coreless support 26. For this adhesion, it is preferable to use a paste or film which is a resin composition containing a thermosetting resin and a thermally conductive inorganic filler.
- This printed wiring board manufacturing method includes (1) a manufacturing process of a coreless support with a wiring layer, (2) a manufacturing process of a laminate with a buildup layer, and (3) a separation process of the laminate with a buildup layer. (4) Processing steps of the multilayer wiring board. A method of manufacturing a printed wiring board including these steps is schematically shown in FIGS. 3 to 5 (particularly FIG. 5).
- the coreless support body 26 with a wiring layer is manufactured by the method of the present invention described above. That is, the method for manufacturing a printed wiring board according to the present invention includes a series of steps of the above-described method for manufacturing a coreless support with a wiring layer, and repeated description thereof is omitted here.
- the laminate 32 with buildup layer is separated by the release layer 16 to obtain a multilayer wiring board 34 including the buildup layer 30. That is, the carrier 12, the intermediate layer 14, and the peeling layer 16 are peeled and removed. In this separation step, physical separation, chemical separation, or the like can be employed, but physical peeling is preferable.
- the physical separation method is a method in which the multilayer wiring board 34 is obtained by separating the carrier 12 and the like by peeling them off the buildup layer 30 by hand, jigs, tools, or the like (see FIG. 5H).
- the carrier-attached copper foil 10 of the present invention has the intermediate layer 14, and thus can provide stability with excellent mechanical peel strength of the carrier 12. As a result, the carrier 12 can be peeled together with the intermediate layer 14 and the peeling layer 16 without difficulty.
- the multilayer wiring board 34 is processed to obtain a printed wiring board 36 (FIG. 5 (i)).
- the antireflection layer 17 is present on the multilayer wiring board 34, it is preferable to remove the antireflection layer 17 by flash etching.
- This flash etching is preferably performed by selecting an appropriate etching solution according to the metal constituting the antireflection layer 17 as exemplified in Table 1 below.
- Table 1 exemplifies typical etching solutions, but is not limited thereto, and the type, concentration, temperature, and the like of the acid and ammonium salt can be appropriately changed from the conditions described in Table 1.
- the antireflection layer 17 can be selectively flash etched by using such an etchant, the wiring layer 24 (which is made of copper) exposed under the antireflection layer 17 is eroded. It can be significantly suppressed. That is, an etching solution having high selectivity can be used as an etching solution for flash-etching at least one metal selected from Cr, W, Ta, Ti, Ni and Mo constituting the antireflection layer 17. As a result, dissolution of the copper constituting the wiring layer 24 by the etching solution can be suppressed or avoided.
- the printed wiring board 36 as shown in FIG. 5 can process the outer layer by various methods.
- an insulating layer and a wiring layer as build-up wiring layers may be further laminated on the wiring layer 24 of the printed wiring board 36 as an arbitrary number, or a solder resist layer is formed on the surface of the wiring layer 24, and Ni -Surface treatment as an outer layer pad such as Au plating or OSP treatment (water-soluble preflux treatment, Organic Solderability Preservative) may be performed.
- a columnar pillar or the like may be provided on the outer layer pad.
- a publicly known method generally employed in a printed wiring board can be additionally performed as appropriate, and is not particularly limited.
- Example 1 Production of copper foil with carrier As shown in FIG. 1, an adhesion metal layer 14 a, a peeling auxiliary layer 14 b, a peeling layer 16, and an ultrathin copper layer 18 are formed in this order on a glass sheet as a carrier 12. Thus, a copper foil 10 with a carrier was produced.
- the specific procedure is as follows.
- the arithmetic average roughness Ra mentioned in the following examples is a value measured with a non-contact surface shape measuring instrument (New View 5032 manufactured by Zygo Corporation) in accordance with JIS B 0601-2001.
- the end face of the carrier 12 was masked with a stainless steel plate, and various layers were formed by sputtering as described below.
- peeling auxiliary layer A copper layer having a thickness of 100 nm was formed as a peeling auxiliary layer 14b on the adhesion metal layer 14a by sputtering under the following apparatus and conditions.
- -Equipment Single wafer DC sputtering equipment (Canon Tokki Co., Ltd., MLS464)
- -Target 8 inch (203.2 mm) diameter copper target (purity 99.98%)
- -Ultimate vacuum Pu less than 1 x 10-4
- Pa-Gas Argon gas (flow rate: 100 sccm)
- -Sputtering pressure 0.35Pa -Sputtering power: 2000 W (6.2 W / cm 2 )
- Deposition temperature 40 ° C
- composition analysis of adhesion metal layer, peeling auxiliary layer and antireflection layer A monitoring sample for surface analysis was prepared for the adhesion metal layer 14a, the peeling assist layer 14b, and the antireflection layer 17, and elemental analysis was performed by TOF-SIMS (time-of-flight secondary ion mass spectrometry). This measurement was performed under the condition of 800 V-3 mA in the constant current mode.
- TOF-SIMS time-of-flight secondary ion mass spectrometry
- Adhesive metal layer 14a Ti: 92.5 atomic%, O: 7.5 atomic% Peeling auxiliary layer 14b: Cu: 99 atomic%, O: 1 atomic% Antireflection layer 17: Ti: 99.6 atomic%, O: 0.4 atomic%
- Example 2 Production and evaluation of a copper foil with a carrier in the same manner as in Example 1 except that the sputtering target was a nickel target (purity 99.999%) in order to form a nickel layer instead of the titanium layer as the adhesion metal layer 14a. Went.
- the results were as shown in Table 2.
- arithmetic mean roughness Ra of the surface on the opposite side to the peeling layer 16 of the ultra-thin copper layer 18 was 3.7 nm.
- the composition of each layer other than the adhesive metal layer 14a was substantially the same as in Example 1.
- the composition of the adhesion metal layer 14a was Ni: 99.5 atomic% and O: 0.5 atomic%.
- Example 3 Production and evaluation of carrier-attached copper foil in the same manner as in Example 1 except that the sputtering target was a chromium target (purity 99.999%) in order to form a chromium layer instead of the titanium layer as the adhesion metal layer 14a. Went.
- the results were as shown in Table 2.
- arithmetic mean roughness Ra of the surface on the opposite side to the peeling layer 16 of the ultra-thin copper layer 18 was 3.5 nm.
- the composition of each layer other than the adhesive metal layer 14a was substantially the same as in Example 1.
- the composition of the adhesion metal layer 14a was Cr: 98.0 atomic% and O: 2.0 atomic%.
- Example 4 As the carrier 12, an alumina plate (product name: A-476, manufactured by Kyocera Corporation) having an arithmetic average roughness Ra of 0.2 ⁇ m and a thickness of 1000 ⁇ m is prepared, and the surface thereof is CMP (Chemical Mechanical Polish). ) A copper foil with a carrier was prepared and evaluated in the same manner as in Example 1 except that the roughness of the surface was changed to Ra 1.0 nm by treatment by the method. The results were as shown in Table 2. In addition, arithmetic mean roughness Ra of the surface on the opposite side to the peeling layer 16 of the ultra-thin copper layer 18 was 2.1 nm. The composition of each layer was substantially the same as in Example 1.
- Example 5 Except that a yttria-stabilized zirconia plate (yttrium oxide 10% by weight) (manufactured by Shinko Co., Ltd.) having a thickness of 500 ⁇ m and having a surface having an arithmetic average roughness Ra: 1.0 nm was prepared as the carrier 12 by surface polishing.
- a yttria-stabilized zirconia plate yttrium oxide 10% by weight
- Ra arithmetic average roughness Ra
- Example 6 (Comparison) A copper foil with a carrier was prepared and evaluated in the same manner as in Example 1 except that the adhesion metal layer 14a and the peeling assist layer 14b were not formed. The results were as shown in Table 2. In addition, arithmetic mean roughness Ra of the surface on the opposite side to the peeling layer 16 of the ultra-thin copper layer 18 was 1.0 nm. The composition of each layer was substantially the same as in Example 1.
- Example 7 In order to form an aluminum layer instead of the titanium layer which is the adhesion metal layer 14a, the production of the copper foil with a carrier was carried out in the same manner as in Example 1 except that the sputtering target was an aluminum target (purity 99.999%). Evaluation was performed. The results were as shown in Table 2. In addition, arithmetic mean roughness Ra of the surface on the opposite side to the peeling layer 16 of the ultra-thin copper layer 18 was 4.0 nm. The composition of each layer other than the adhesive metal layer 14a was substantially the same as in Example 1. The composition of the adhesion metal layer 14a was Al: 98 atomic% and O: 2 atomic%.
- Example 8 (Comparison) A copper foil with a carrier was prepared and evaluated in the same manner as in Example 1 except that the peeling assist layer 14b was not formed. The results were as shown in Table 2. In addition, arithmetic mean roughness Ra of the surface on the opposite side to the peeling layer 16 of the ultra-thin copper layer 18 was 2.2 nm. The composition of each layer was substantially the same as in Example 1.
- Example 9 (Comparison) A copper foil with a carrier was prepared and evaluated in the same manner as in Example 1 except that the adhesion metal layer 14a was not formed. The results were as shown in Table 2. In addition, arithmetic mean roughness Ra of the surface on the opposite side to the peeling layer 16 of the ultra-thin copper layer 18 was 3.1 nm. The composition of each layer was substantially the same as in Example 1.
- Example 10 Comparison of Preparation of copper foil with carrier and in the same manner as in Example 1 except that the sputtering target was a nickel target (purity 99.999%) in order to form a nickel layer instead of the copper layer as the peeling assist layer 14b. Evaluation was performed. The results were as shown in Table 2. In addition, arithmetic mean roughness Ra of the surface on the opposite side to the peeling layer 16 of the ultra-thin copper layer 18 was 2.5 nm. The composition of each layer other than the peeling assist layer 14b was substantially the same as in Example 1. The composition of the peeling assist layer 14b was Ni: 99.0 atomic% and O: 1.0 atomic%.
- Examples 11-13 In the same manner as in Example 1, except that a molybdenum layer (Example 11), a tungsten layer (Example 12), or a manganese layer (Example 13) was formed by sputtering instead of the titanium layer as the adhesion metal layer 14a, the carrier Copper foil was prepared and evaluated. The results were as shown in Table 2.
- Example 14 to 24 (Examples 18 and 19 are comparative examples only)
- the carrier in place of the two layers of the adhesion metal layer 14a and the peeling auxiliary layer 14b, the carrier is formed in the same manner as in Example 1 except that an intermediate alloy layer having the composition shown in Table 3 is formed as a single intermediate layer 14. Preparation and evaluation of the attached copper foil were performed. The results were as shown in Table 3.
- a copper foil with a carrier was prepared in the same manner as in Example 1 except that masking was performed using a plate made and the thickness (end face thickness) of the release layer 16 at the end face was changed. As a result, the thickness (end face thickness) of each layer on the end face of the carrier 12 was as follows.
- -Adhesive metal layer 14a Titanium layer (end face thickness: 35nm)
- -Peeling auxiliary layer 14b Copper layer (end face thickness: 35 nm)
- -Release layer 16 Carbon layer (various end face thicknesses shown in Table 4)
- -Antireflection layer 17 Titanium layer (end face thickness: 38nm)
- -Ultra-thin copper layer 18 Copper layer (end face thickness: 100nm)
- a copper foil with a carrier was produced in the same manner as in Example 1 except that masking using a plate was performed and the thickness (end face thickness) of the release layer 16 at the end face was as follows.
- Evaluation AA No peeling of the ultrathin copper layer was observed.
- Evaluation A The ultrathin copper layer peeled off with a diameter of 3 ⁇ m or less.
- Evaluation B The ultrathin copper layer peeled off with a diameter of 50 ⁇ m or less.
- Evaluation C The ultrathin copper layer peeled off with a size larger than 50 ⁇ m in diameter.
- the peel strength (gf / cm) when the electrolytic copper plating layer integrated with the ultrathin copper layer 18 was peeled from the obtained copper clad laminate was measured. . At this time, the measurement width was 50 mm and the measurement length was 20 mm.
- the peel strength (average value) thus obtained was rated according to the following criteria. Evaluation A: Peel strength is 2 to 10 gf / cm Evaluation B: Peel strength of 1 to 30 gf / cm (excluding 2 to 10 gf / cm) Evaluation C: Peel strength is less than 1 gf / cm or more than 30 gf / cm
- ⁇ Evaluation 3 Evaluation of film chipping at end of coreless support>
- the coreless support used in Evaluation 1 was subjected to electrolytic copper plating, and then the ultrathin copper layer was flash etched with a sulfuric acid-hydrogen peroxide solution to form a coreless support with a wiring pattern.
- the maximum width (mm) of the chip of the peeling layer (that is, the ultrathin copper layer and the antireflection layer) at the end of the coreless support was measured, and the following Rated according to criteria. The results were as shown in Tables 2-4.
- -Evaluation AA less than 0.1 mm (best) -Evaluation A: 0.1 mm or more and less than 1 mm (good) -Evaluation B: 1 mm or more and less than 2 mm (acceptable) -Evaluation C: 2mm or more (impossible)
- the number of defective pieces of the embedded wiring was counted as a defect rate when one piece was defined as 8 mm ⁇ 8 mm square and the number of observed pieces in each example was 336 pieces.
- the failure mode was a short circuit due to peeling of the adhesion metal layer or the peeling auxiliary layer, which is a metal on the carrier side when the ultrathin copper layer is peeled off and the coreless support is peeled off.
- -Evaluation AA Defect rate is less than 5% by number (best) -Evaluation A: defective rate of 5% to less than 10% (good) -Evaluation B: The defect rate is 10% or more and less than 20% (possible) -Evaluation C: The defect rate is 20% or more and less than 50% (impossible)
- ⁇ Evaluation 5 Evaluation of chemical penetration width> A coreless support with a wiring pattern obtained in Evaluation 3 is laminated with a 100 mm ⁇ 100 mm size prepreg (FR-4 manufactured by Panasonic, thickness 200 ⁇ m), and the prepreg is cured to produce a printed wiring board. did. The obtained printed wiring board was subjected to desmear treatment using a sodium permanganate solution, and a drug penetration width (mm) was measured as an index indicating the amount of chemical penetration.
- This desmear treatment was performed by sequentially performing the following treatments using the treatment liquid shown below from Rohm & Haas Electronic Materials Co., Ltd.
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Abstract
Description
前記キャリア上に設けられ、前記キャリア側の表面が、Ti、Cr、Mo、Mn、W及びNiからなる群から選択される少なくとも1種の金属を1.0at%以上含有し、かつ、前記キャリアと反対側の表面が、Cuを30at%以上含有する中間層と、
前記中間層上に設けられる剥離層と、
前記剥離層上に設けられる極薄銅層と、
を備えた、キャリア付銅箔が提供される。
前記極薄銅層の表面にフォトレジスト層を所定のパターンで形成する工程と、
前記極薄銅層の露出表面に電気銅めっき層を形成する工程と、
前記フォトレジスト層を剥離する工程と、
前記極薄銅層の不要部分を銅フラッシュエッチングにより除去して、配線層が形成されたコアレス支持体を得る工程と、
を含む、配線層付コアレス支持体の製造方法が提供される。
前記配線層付コアレス支持体の前記配線層が形成された面にビルドアップ層を形成してビルドアップ層付積層体を作製する工程と、
前記ビルドアップ層付積層体を前記剥離層で分離して前記ビルドアップ層を含む多層配線板を得る工程と、
前記多層配線板を加工してプリント配線板を得る工程と、
を含む、プリント配線板の製造方法が提供される。
本発明のキャリア付銅箔が図1に模式的に示される。図1に示されるように、本発明のキャリア付銅箔10は、キャリア12と、中間層14と、剥離層16と、極薄銅層18とをこの順に備えたものである。中間層14は、キャリア12上に設けられ、キャリア12側の表面が、Ti、Cr、Mo、Mn、W及びNiからなる群から選択される少なくとも1種の金属を1.0at%以上含有し、かつ、キャリア12と反対側の表面が、Cuを30at%以上含有する層である。剥離層16は、中間層14上に設けられる層である。極薄銅層18は、剥離層16上に設けられる、銅からなる層である。所望により、本発明のキャリア付銅箔10は、剥離層16と極薄銅層18の間に反射防止層17をさらに有していてもよい。また、キャリア12の両面に上下対称となるように上述の各種層を順に備えてなる構成としてもよい。キャリア付銅箔10は、上述した中間層14及び所望により反射防止層17を備えること以外は、公知の層構成を採用すればよく特に限定されない。
本発明によるキャリア付銅箔10は、上述したキャリア12を用意し、キャリア12上に、中間層14(例えば密着金属層14a及び剥離補助層14bの2層、或いは中間合金層の1層)、剥離層16、所望により反射防止層17、及び極薄銅層18を形成することにより製造することができる。中間層14、剥離層16、反射防止層17(存在する場合)及び極薄銅層18の各層の形成は、極薄化によるファインピッチ化に対応しやすい観点から、気相法により行われるのが好ましい。気相法の例としては、スパッタリング法、真空蒸着法、及びイオンプレーティング法が挙げられるが、0.05nm~5000nmといった幅広い範囲で膜厚制御できる点、広い幅ないし面積にわたって膜厚均一性を確保できる点等から、最も好ましくはスパッタリング法である。特に、中間層14、剥離層16、反射防止層17(存在する場合)及び極薄銅層18の全ての層をスパッタリング法により形成することで、製造効率が格段に高くなる。気相法による成膜は公知の気相成膜装置を用いて公知の条件に従って行えばよく特に限定されない。例えば、スパッタリング法を採用する場合、スパッタリング方式は、マグネトロンスパッタリング、2極スパッタリング法、対向ターゲットスパッタリング法等、公知の種々の方法であってよいが、マグネトロンスパッタリングが、成膜速度が速く生産性が高い点で好ましい。スパッタリングはDC(直流)及びRF(高周波)のいずれの電源で行ってもよい。また、ターゲット形状も広く知られているプレート型ターゲットを使用することができるが、ターゲット使用効率の観点から円筒形ターゲットを用いることが望ましい。以下、中間層14(例えば密着金属層14a及び剥離補助層14bの2層、或いは中間合金層の1層)、剥離層16、反射防止層17(存在する場合)及び極薄銅層18の各層の気相法(好ましくはスパッタリング法)による成膜について説明する。
本発明のキャリア付銅箔はコアレス支持体用積層板の形態で提供されてもよい。すなわち、本発明の好ましい態様によれば、上記キャリア付銅箔を備えた、コアレス支持体用積層板が提供される。コアレス支持体用積層板の形態としては以下の2つの形態が挙げられる。(i)コアレス支持体用積層板の第一の形態は、キャリア付銅箔そのものの形態である。すなわち、キャリア12の少なくとも片面に、中間層14/剥離層16/必要に応じて反射防止層17/極薄銅層18がこの順に積層されたキャリア付銅箔10そのものの形態であり、キャリアの両面に中間層14/剥離層16/必要に応じて反射防止層17/極薄銅層18がこの順に積層された形態を含まれる。いずれにしても、キャリア12がガラス板や金属板の場合など、キャリア単体に剛性があり支持体として機能し得る場合、この形態が成立する。例えば、ガラスをキャリア12として用いた場合、軽量で、熱膨脹係数が低く、剛直で表面が平坦なため、極薄銅層18の表面を極度に平滑にできる等の利点がある。(ii)コアレス支持体用積層板の第二の形態は、キャリア12の剥離層16と反対側(すなわちキャリア12の外側表面)に接着剤層を備えた形態である。キャリア12が金属箔、樹脂フィルム等の、剛性が無い材料で構成される場合にこの形態が考えられる。この場合、接着剤層の例としては、樹脂層、(ガラス等の)繊維強化性プリプレグ等が挙げられる。例えば、極薄銅層18/必要に応じて反射防止層17/剥離層16/中間層14/キャリア12/接着剤層(図示せず)/キャリア12/中間層14/剥離層16/必要に応じて反射防止層17/極薄銅層18の層構成を採用することも可能である。なお、中間層14は、キャリア12側から密着金属層14a/剥離補助層14bの2層を順に有するものであってもよいし、1層の中間合金層であってもよいのは前述したとおりである。
本発明のキャリア付銅箔を用いて配線層付コアレス支持体を製造することができる。以下、配線層付コアレス支持体の好ましい製造方法について説明する。この配線層付コアレス支持体の製造方法は、(1)キャリア付銅箔の準備工程と、(2)フォトレジスト層の形成工程と、(3)電気銅めっき層の形成工程と、(4)フォトレジスト層の剥離工程と、(5)フラッシュエッチング工程とを含む。これらの工程を含む配線層付コアレス支持体の製造方法が模式的に図3及び4に示される。
キャリア付銅箔10を支持体として用意する(図3(a)参照)。上述のとおり、キャリア付銅箔10はコアレス支持体用積層板の形態で用意されうる。すなわち、上述したように、キャリア付銅箔そのものの形態で提供されてもよいし、キャリア12の剥離層16と反対側(すなわちキャリア12の外側表面)に接着剤層を備えた形態(例えば、極薄銅層18/必要に応じて反射防止層17/剥離層16/中間層14/キャリア12/接着剤層(図示せず)/キャリア12/中間層14/剥離層16/必要に応じて反射防止層17/極薄銅層18の層構成)で用意されてもよい。なお、中間層14は、図3及び4に示されるようにキャリア12側から密着金属層14a/剥離補助層14bの2層を順に有するものであってもよいし、図1に示されるように1層の中間合金層であってもよいのは前述したとおりである。
極薄銅層18の表面にフォトレジスト層20を所定のパターンで形成する(図3(b)参照)。フォトレジストは感光性フィルムであるのが好ましく、例えば感光性ドライフィルムである。フォトレジスト層20は、露光及び現像により所定の配線パターンを付与すればよい。このとき、本発明のキャリア付銅箔10は中間層14を有することで、現像液(例えば炭酸ナトリウム水溶液)に対して優れた耐剥離性を呈することができる。
極薄銅層18の露出表面(すなわちフォトレジスト層20でマスキングされていない部分)に電気銅めっき層22を形成する(図3(c)参照)。電気銅めっきは公知の手法により行えばよく、特に限定されない。
次いで、フォトレジスト層20を剥離する。その結果、図4(d)に示されるように、電気銅めっき層22が配線パターン状に残り、配線パターンを形成しない部分の極薄銅層18が露出する。
極薄銅層18の不要部分を銅フラッシュエッチングにより除去して、配線層24が形成されたコアレス支持体(以下、配線層付コアレス支持体26という)を得る。このとき、キャリア付銅箔10が反射防止層17を有する場合には、極薄銅層18の不要部分を銅フラッシュエッチングにより除去して反射防止層17を露出させて残存させる(すなわち反射防止層17で銅フラッシュエッチングを止める)ようにする。このフラッシュエッチング液は、硫酸/過酸化水素混合液や、過硫酸ナトリウム及び過硫酸カリウムの少なくともいずれか1種を含む液を用いるのが、電気銅めっき層22の過度なエッチングを回避しながら、露出した極薄銅層18を確実にエッチングできる点で好ましい。こうして、図4(e)に示されるように、電気銅めっき層22/極薄銅層18が配線パターン状に残り、配線パターンを形成しない部分の反射防止層17がフラッシュエッチング液により溶解されず残留し、表面に露出することとなる。このとき、反射防止層17を構成するCr、W、Ta、Ti、Ni及びMoから選択される少なくとも1種の金属は、銅フラッシュエッチング液に対して溶解しないという性質を有するので、銅フラッシュエッチング液に対して優れた耐薬品性を呈することができる。すなわち、反射防止層17は銅フラッシュエッチングで除去されることなく、次なる画像検査工程のために露出状態で残される。
上記銅フラッシュエッチング後、配線層付コアレス支持体26(具体的には配線層24)を画像検査する工程を行うのが好ましい。画像検査は、典型的には、光学式自動外観検査(AOI)装置を用いて光源から所定の光を照射して、配線パターンの二値化画像を取得し、この二値化画像と設計データ画像とのパターンマッチングを試み、両者間における一致/不一致を評価することにより行われる。この画像検査は、存在する場合には反射防止層17を露出させたままの状態で行うのが好ましい。反射防止層17の表面を構成する金属粒子の集合体は、その金属質の材質及び粒状形態に起因して望ましい暗色を呈し、その暗色が銅で構成される配線層24との間で望ましい視覚的コントラストをもたらすので、画像検査(例えば自動画像検査(AOI))における視認性を向上させる。
本発明の配線層付コアレス支持体を用いてプリント配線板を製造することができる。以下、プリント配線板の好ましい製造方法について説明する。このプリント配線板の製造方法は、(1)配線層付コアレス支持体の製造工程と、(2)ビルドアップ層付積層体の作製工程と、(3)ビルドアップ層付積層体の分離工程と、(4)多層配線板の加工工程とを含む。これらの工程を含むプリント配線板の製造方法が模式的に図3~5(特に図5)に示される。
上述した本発明の方法により配線層付コアレス支持体26を製造する。すなわち、本発明のプリント配線板の製造方法は、上述した配線層付コアレス支持体の製造方法の一連の工程を含むものであり、ここでの繰り返しの説明は省略する。
配線層付コアレス支持体26の配線層24が形成された面にビルドアップ層30を形成してビルドアップ層付積層体32を作製する(図5(g)参照)。なお、図5においてビルドアップ層30の詳細は示されていないが、一般的にプリント配線板において採用される公知のビルドアップ配線層の構成を採用すればよく特に限定されない。
ビルドアップ層付積層体32を剥離層16で分離してビルドアップ層30を含む多層配線板34を得る。すなわち、キャリア12、中間層14、並びに剥離層16が剥離除去される。この分離工程においては、物理的な分離、化学的な分離等が採用可能であるが、物理的な剥離が好ましい。物理的分離法は、手や治工具、機械等でキャリア12等をビルドアップ層30から引き剥がすことにより分離して多層配線板34を得る手法である(図5(h)参照)。このとき、本発明のキャリア付銅箔10は中間層14を有することで、キャリア12の機械的剥離強度の優れた安定性をもたらすことができる。その結果、キャリア12を中間層14及び剥離層16とともに無理なく剥離することができる。
多層配線板34を加工してプリント配線板36を得る(図5(i))。このとき、多層配線板34に反射防止層17が存在している場合は、反射防止層17をフラッシュエッチングにより除去するのが好ましい。このフラッシュエッチングは、例えば以下の表1に例示されるように、反射防止層17を構成する金属に応じて適切なエッチング液を選択して行うのが好ましい。表1に代表的なエッチング液を例示するが、これらに限定されるものではなく、酸やアンモニウム塩の種類、濃度、温度等は表1に記載の条件から適宜変更されうるものである。
(1)キャリア付銅箔の作製
図1に示されるように、キャリア12としてのガラスシート上に密着金属層14a、剥離補助層14b、剥離層16、及び極薄銅層18をこの順に成膜してキャリア付銅箔10を作製した。具体的な手順は以下のとおりである。なお、以下の例において言及される算術平均粗さRaはJIS B 0601-2001に準拠して非接触表面形状測定機(Zygo株式会社製NewView5032)で測定された値である。
算術平均粗さRa0.5nmの表面を有する厚さ700μmのガラスシート(材質:無アルカリガラス、製品名:OA10、日本電気硝子社製)を用意した。
キャリア12の表面に、密着金属層14aとして厚さ100nmのチタン層を以下の装置及び条件でスパッタリングにより形成した。
‐ 装置:枚葉式マグネロトンスパッタリング装置(トッキ株式会社製)
‐ ターゲット:直径8インチ(203.2mm)のTiターゲット(純度99.999%)
‐ 到達真空度Pu:1×10-4Pa未満
‐ キャリアガス:Ar(流量:100sccm)
‐ スパッタリング圧:0.35Pa
‐ スパッタリング電力:2000W(6.2W/cm2)
‐ 成膜時温度:40℃
密着金属層14aの上に、剥離補助層14bとして厚さ100nmの銅層を以下の装置及び条件でスパッタリングにより形成した。
‐ 装置:枚葉式DCスパッタリング装置(キャノントッキ株式会社製、MLS464)
‐ ターゲット:直径8インチ(203.2mm)の銅ターゲット(純度99.98%)
‐ 到達真空度Pu:1×10-4Pa未満
‐ ガス:アルゴンガス(流量:100sccm)
‐ スパッタリング圧:0.35Pa
‐ スパッタリング電力:2000W(6.2W/cm2)
‐ 成膜時温度:40℃
剥離補助層14bの上に、剥離層16として厚さ3nmのアモルファスカーボン層を以下の装置及び条件でスパッタリングにより形成した。
‐ 装置:枚葉式DCスパッタリング装置(キャノントッキ株式会社製、MLS464)
‐ ターゲット:直径8インチ(203.2mm)の炭素ターゲット(純度99.999%)
‐ 到達真空度Pu:1×10-4Pa未満
‐ キャリアガス:Ar(流量:100sccm)
‐ スパッタリング圧:0.35Pa
‐ スパッタリング電力:100W(0.3W/cm2)
‐ 成膜時温度:40℃
剥離層16の表面に、反射防止層17として厚さ100nmのチタン層を以下の装置及び条件でスパッタリングにより形成した。
‐ 装置:枚葉式DCスパッタリング装置(キャノントッキ株式会社製、MLS464)
‐ ターゲット:直径8インチ(203.2mm)のチタンターゲット(純度99.999%)
‐ キャリアガス:Ar(流量:100sccm)
‐ 到達真空度Pu:1×10-4Pa未満
‐ スパッタリング圧:12Pa
‐ スパッタリング電力:2000W(6.2W/cm2)
反射防止層17の上に、膜厚300nmの極薄銅層18を以下の装置及び条件でスパッタリングにより形成した。得られた極薄銅層18の剥離層16と反対側の表面(すなわち外側表面)の算術平均粗さ(Ra)は3nmであった。
‐ 装置:枚葉式DCスパッタリング装置(キャノントッキ株式会社製、MLS464)
‐ ターゲット:直径8インチ(203.2mm)の銅ターゲット(純度99.98%)
‐ 到達真空度Pu:1×10-4Pa未満
‐ キャリアガス:Ar(流量:100sccm)
‐ スパッタリング圧:0.35Pa
‐ スパッタリング電力:2000W(6.2W/cm2)
‐ 成膜時温度:40℃
組成分析等のためのサンプルとして、上記で得られたキャリア付銅箔の密着金属層14a、剥離補助層14b、剥離層16及び反射防止層17の製造条件と同様の製造条件により、ガラスシート上に密着金属層14aのみを形成したサンプルと、ガラスシート上に剥離補助層14bのみを形成したサンプルと、ガラスシート上に剥離層16のみを形成したサンプルと、ガラスシート上に反射防止層17のみを形成したサンプルとを別個に作製した。各々のサンプルに対して組成分析を以下のとおり行うことで各層の組成を把握した。
密着金属層14a、剥離補助層14b、及び反射防止層17に対し、表面分析用のモニタリングサンプルを作成し、TOF-SIMS(飛行時間型二次イオン質量分析法)により元素分析を行った。この測定は定電流モードにより800V-3mAの条件で行った。その結果、密着金属層14a、剥離補助層14b及び反射防止層17の組成はそれぞれ以下のとおりであった。密着金属層14a:Ti:92.5原子%、O:7.5原子%
剥離補助層14b:Cu:99原子%、O:1原子%
反射防止層17:Ti:99.6原子%、O:0.4原子%
剥離層16(すなわち炭素層)に対して、XPSにより元素分析を行い、炭素濃度を測定した。その結果、剥離層16の炭素濃度は93原子%(C+O=100%)であった。
反射防止層17を形成した直後のサンプルを抜き取り、反射防止層17の表面を走査型電子顕微鏡により50000倍で撮影してSEM画像を得た。得られたSEM像を二値化画像した画像解析によって測定した。この画像解析には、画像解析式粒度分布ソフトウェア(Mountech Co.,Ltd.社製、Mac-VIEW)を用いた。測定は任意の50個以上の粒子を対象とし、個々の粒子について投影面積円相当径を測定し、その相加平均値を算出した。その結果、反射防止層17の表面の投影面積円相当径は60nmであった。
密着金属層14aとしてチタン層の代わりにニッケル層を形成すべく、スパッタリングターゲットをニッケルターゲット(純度99.999%)としたこと以外は、例1と同様にして、キャリア付銅箔の作製及び評価を行った。結果は表2に示されるとおりであった。なお、極薄銅層18の剥離層16と反対側の表面の算術平均粗さRaは3.7nmであった。密着金属層14a以外の各層の組成は例1と概ね同様であった。密着金属層14aの組成はNi:99.5原子%、O:0.5原子%であった。
密着金属層14aとしてチタン層の代わりにクロム層を形成すべく、スパッタリングターゲットをクロムターゲット(純度99.999%)としたこと以外は、例1と同様にして、キャリア付銅箔の作製及び評価を行った。結果は表2に示されるとおりであった。なお、極薄銅層18の剥離層16と反対側の表面の算術平均粗さRaは3.5nmであった。密着金属層14a以外の各層の組成は例1と概ね同様であった。密着金属層14aの組成はCr:98.0原子%、O:2.0原子%であった。
キャリア12として、算術平均粗さRa:0.2μmの表面を有する厚さ1000μmのアルミナ板(製品名:A-476、京セラ株式会社製)を用意し、その表面をCMP(ケミカル・メカニカル・ポリッシュ)法により処理することで表面の粗さをRa1.0nmとしたこと以外は、例1と同様にして、キャリア付銅箔の作製及び評価を行った。結果は表2に示されるとおりであった。なお、極薄銅層18の剥離層16と反対側の表面の算術平均粗さRaは2.1nmであった。各層の組成は例1と概ね同様であった。
キャリア12として、表面研磨処理により算術平均粗さRa:1.0nmの表面を有する厚さ500μmのイットリア安定化ジルコニア板(酸化イットリウム10重量%)(信光社製)を用意したこと以外は、例1と同様にして、キャリア付銅箔の作製及び評価を行った。結果は表2に示されるとおりであった。なお、極薄銅層18の剥離層16と反対側の表面の算術平均粗さRaは2.2nmであった。各層の組成は例1と概ね同様であった。
密着金属層14a及び剥離補助層14bを形成しなかったこと以外は、例1と同様にして、キャリア付銅箔の作製及び評価を行った。結果は表2に示されるとおりであった。なお、極薄銅層18の剥離層16と反対側の表面の算術平均粗さRaは1.0nmであった。各層の組成は例1と概ね同様であった。
密着金属層14aであるチタン層の代わりにアルミニウム層を形成すべく、スパッタリングターゲットをアルミニウムターゲット(純度99.999%)としたこと以外は、例1と同様にして、キャリア付銅箔の作製及び評価を行った。結果は表2に示されるとおりであった。なお、極薄銅層18の剥離層16と反対側の表面の算術平均粗さRaは4.0nmであった。密着金属層14a以外の各層の組成は例1と概ね同様であった。密着金属層14aの組成はAl:98原子%、O:2原子%であった。
剥離補助層14bを形成しなかったこと以外は、例1と同様にして、キャリア付銅箔の作製及び評価を行った。結果は表2に示されるとおりであった。なお、極薄銅層18の剥離層16と反対側の表面の算術平均粗さRaは2.2nmであった。各層の組成は例1と概ね同様であった。
密着金属層14aを形成しなかったこと以外は、例1と同様にして、キャリア付銅箔の作製及び評価を行った。結果は表2に示されるとおりであった。なお、極薄銅層18の剥離層16と反対側の表面の算術平均粗さRaは3.1nmであった。各層の組成は例1と概ね同様であった。
剥離補助層14bである銅層の代わりにニッケル層を形成すべく、スパッタリングターゲットをニッケルターゲット(純度99.999%)としたこと以外は、例1と同様にして、キャリア付銅箔の作製及び評価を行った。結果は表2に示されるとおりであった。なお、極薄銅層18の剥離層16と反対側の表面の算術平均粗さRaは2.5nmであった。剥離補助層14b以外の各層の組成は例1と概ね同様であった。剥離補助層14bの組成はNi:99.0原子%、O:1.0原子%であった。
密着金属層14aであるチタン層の代わりに、モリブデン層(例11)、タングステン層(例12)又はマンガン層(例13)をスパッタリングで形成したこと以外は、例1と同様にして、キャリア付銅箔の作製及び評価を行った。結果は表2に示されるとおりであった。
例1において、密着金属層14a及び剥離補助層14bの2層代わりに、単層の中間層14として表3に示される組成の中間合金層を形成したこと以外は例1と同様にして、キャリア付銅箔の作製及び評価を行った。結果は表3に示されるとおりであった。
i)密着金属層14a、剥離補助層14b、反射防止層17及び極薄銅層18の形成をキャリア12の端面にマスキングを施さずに行ったこと、及びii)剥離層16の形成をステンレス鋼製プレートを用いたマスキングを施して行い、端面における剥離層16の厚さ(端面厚)を変化させたこと以外は、例1と同様にしてキャリア付銅箔の作製を行った。その結果、キャリア12の端面における各層の厚さ(端面厚)は下記のとおりとなった。
‐ 密着金属層14a:チタン層(端面厚:35nm)
‐ 剥離補助層14b:銅層(端面厚:35nm)
‐ 剥離層16:炭素層(表4に示される各種端面厚)
‐ 反射防止層17:チタン層(端面厚:38nm)
‐ 極薄銅層18:銅層(端面厚:100nm)
i)中間合金層としての中間層14、反射防止層17及び極薄銅層18の形成をキャリア12の端面にマスキングを施さずに行ったこと、及びii)剥離層16の形成をステンレス鋼製プレートを用いたマスキングを施して行い、端面における剥離層16の厚さ(端面厚)を以下のとおりとしたこと以外は、例1と同様にしてキャリア付銅箔の作製を行った。
‐ 中間層13(中間合金層):Cu-Mn合金層(元素比Cu:Mn=95:5、端面厚:35nm)
‐ 剥離層16:炭素層(端面厚:0nm)
‐ 反射防止層17:チタン層(端面厚:38nm)
‐ 極薄銅層18:銅層(端面厚:100nm)
例1~30のキャリア付銅箔について、以下に示されるとおり、各種評価を行った。評価結果は表2~4に示されるとおりであった。
各キャリア付銅箔の極薄銅層の表面を0.05mol/Lの希硫酸で処理して表面の酸化膜の除去を行い、その後、水洗及び乾燥を行った。その後、極薄銅層の表面に感光性ドライフィルムを貼り付け、ライン/スペース(L/S)=5μm/5μmのパターンを与えるように露光及び現像を行った。現像は、現像液として1.0重量%炭酸ナトリウム水溶液を用いて、25℃で2分間、シャワー方式により行った。現像後における極薄銅層とキャリアとの間の層間界面(特に剥離層と密着金属層の間)への現像液の浸入による極薄銅層の剥離の有無ないし程度を評価した。得られた評価結果を以下の基準で格付けした。
評価AA:極薄銅層の剥離が観察されなかった。
評価A:極薄銅層が直径3μm以下のサイズで剥離した。
評価B:極薄銅層が直径50μm以下のサイズで剥離した。
評価C:極薄銅層が直径50μmよりも大きなサイズで剥離した。
キャリア付銅箔における熱履歴としての半田リフロー及び真空熱プレスを行った後の剥離強度の測定を以下のように行った。キャリア付銅箔10の極薄銅層18側に、厚さ18μmのパネル電解銅めっきを施した後、熱履歴1として、電子部品実装を想定した半田リフロー(260℃以上で2分間保持)の熱処理を行って室温まで自然冷却させた。その後、熱履歴2として220℃で90分間30kgf/cm2の圧力でプレスした。得られた銅張積層板に対して、JIS C 6481-1996に準拠して、極薄銅層18と一体となった電気銅めっき層を剥離した時の剥離強度(gf/cm)を測定した。このとき、測定幅は50mmとし、測定長さは20mmとした。こうして得られた剥離強度(平均値)を以下の基準で格付けした。
評価A:剥離強度が2~10gf/cm
評価B:剥離強度が1~30gf/cm(ただし、2~10gf/cmを除く)
評価C:剥離強度が1gf/cm未満又は30gf/cm超
評価1に用いたコアレス支持体に対して、電気銅めっきを施した後、硫酸-過酸化水素水溶液で極薄銅層のフラッシュエッチングを行うことにより、配線パターン付のコアレス支持体を形成した。得られた配線パターン付のコアレス支持体に対して、コアレス支持体端部における剥離層上の皮膜(すなわち極薄銅層及び反射防止層)の欠けの最大幅(mm)を測定し、以下の基準に従って格付けした。結果は表2~4に示されるとおりであった。
‐評価AA:0.1mm未満(最良)
‐評価A:0.1mm以上1mm未満(良)
‐評価B:1mm以上2mm未満(許容可能)
‐評価C:2mm以上(不可)
評価3で得られた配線パターン付のコアレス支持体に対して、プリプレグと銅箔とをこの順に積層して硬化させることで、ビルドアップ層付積層体とした。その後、ビルドアップ層付積層体を剥離層で機械的に分離して、ビルドアップ層を含む多層配線板を得た。その後、反射防止層を前述した表1に示される条件に基づいてフラッシュエッチングを行い、ビルドアップ層に埋め込まれた配線層の性状を観察し、以下の基準に従って格付けした。結果は表2及び3に示されるとおりであった。埋め込み配線の不良ピースのカウントは、1ピースを8mm×8mm平方と規定し、各例における観察ピース数を336ピースとした場合の不良率をカウントした。なお、不良モードは、極薄銅層の剥がれ、コアレス支持体を剥離した際に生じるキャリア側の金属である、密着金属層や剥離補助層の剥離によるショートなどであった。
‐評価AA:不良率が5個数%未満(最良)
‐評価A:不良率が5個数%以上10個数%未満(良)
‐評価B:不良率が10個数%以上20個数%未満(可)
‐評価C:不良率が20個数%以上50個数%未満(不可)
評価3で得られた配線パターン付のコアレス支持体に対して、100mm×100mmのサイズのプリプレグ(パナソニック社製FR-4、厚さ200μm)を積層してプリプレグを硬化させ、プリント配線板を作製した。得られたプリント配線板に対して過マンガン酸ナトリウム溶液を用いたデスミア処理を行い、薬液侵入量を示す指標として薬剤侵入幅(mm)を測定した。
[膨潤処理]
‐ 処理液:サーキュポジットMLBコンディショナー211‐120mL/L及び
サーキュポジットZ‐100mL/L
‐ 処理条件::75℃で5分間浸漬
[過マンガン酸処理]
‐ 処理液:サーキュポジットMLBプロモーター213A‐110mL/L、及び
サーキュポジットMLBプロモーター213B‐150mL/L
‐ 処理条件:80℃で5分間浸漬
[中和処理]
‐ 処理液:サーキュポジットMLBニュートラライザー216-2‐200mL/L
‐ 処理条件:45℃で5分間浸漬
‐評価AA:0.1mm未満(最良)
‐評価A:0.1mm以上0.5mm未満(良)
‐評価B:0.5mm以上2mm未満(許容可能)
‐評価C:2mm以上(不可)
Claims (16)
- キャリアと、
前記キャリア上に設けられ、前記キャリア側の表面が、Ti、Cr、Mo、Mn、W及びNiからなる群から選択される少なくとも1種の金属を1.0at%以上含有し、かつ、前記キャリアと反対側の表面が、Cuを30at%以上含有する中間層と、
前記中間層上に設けられる剥離層と、
前記剥離層上に設けられる極薄銅層と、
を備えた、キャリア付銅箔。 - 前記中間層が5~1000nmの厚さを有する、請求項1に記載のキャリア付銅箔。
- 前記中間層が、
前記キャリア上に設けられ、Ti、Cr、Mo、Mn、W及びNiからなる群から選択される少なくとも1種の金属で構成される密着金属層と、
前記密着金属層上に設けられ、銅で構成される剥離補助層と、
を含む、請求項1又は2に記載のキャリア付銅箔。 - 前記密着金属層が5~500nmの厚さを有する、請求項3に記載のキャリア付銅箔。
- 前記剥離補助層が5~500nmの厚さを有する、請求項3又は4に記載のキャリア付銅箔。
- 前記中間層が、Ti、Cr、Mo、Mn、W及びNiからなる群から選択される少なくとも1種の金属の含有量が1.0at%以上であり、かつ、Cu含有量が30at%以上である銅合金で構成される中間合金層である、請求項1又は2に記載のキャリア付銅箔。
- 前記中間合金層が5~500nmの厚さを有する、請求項6に記載のキャリア付銅箔。
- 前記剥離層が主として炭素を含んでなる、請求項1~7のいずれか一項に記載のキャリア付銅箔。
- 前記剥離層が1~20nmの厚さを有する、請求項1~8のいずれか一項に記載のキャリア付銅箔。
- 前記極薄銅層の前記剥離層と反対側の表面が、JIS B 0601-2001に準拠して測定される、1.0~100nmの算術平均粗さRaを有する、請求項1~9のいずれか一項に記載のキャリア付銅箔。
- 前記キャリアの前記中間層側の表面が、JIS B 0601-2001に準拠して測定される、0.1~70nmの算術平均粗さRaを有する、請求項1~10のいずれか一項に記載のキャリア付銅箔。
- 前記キャリアがガラス又はセラミックスで構成される、請求項1~11のいずれか一項に記載のキャリア付銅箔。
- 前記キャリアがガラスで構成される、請求項1~12のいずれか一項に記載のキャリア付銅箔。
- 少なくとも前記極薄銅層が、前記キャリアの端面にまで延出して前記端面が被覆される、請求項1~13のいずれか一項に記載のキャリア付銅箔。
- 請求項1~14のいずれか一項に記載のキャリア付銅箔を支持体として用意する工程と、
前記極薄銅層の表面にフォトレジスト層を所定のパターンで形成する工程と、
前記極薄銅層の露出表面に電気銅めっき層を形成する工程と、
前記フォトレジスト層を剥離する工程と、
前記極薄銅層の不要部分を銅フラッシュエッチングにより除去して、配線層が形成されたコアレス支持体を得る工程と、
を含む、配線層付コアレス支持体の製造方法。 - 請求項15に記載の方法により前記配線層付コアレス支持体を製造する工程と、
前記配線層付コアレス支持体の前記配線層が形成された面にビルドアップ層を形成してビルドアップ層付積層体を作製する工程と、
前記ビルドアップ層付積層体を前記剥離層で分離して前記ビルドアップ層を含む多層配線板を得る工程と、
前記多層配線板を加工してプリント配線板を得る工程と、
を含む、プリント配線板の製造方法。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6134385B2 (ja) * | 1980-07-14 | 1986-08-07 | Nippon Denkai Kk | |
JP2005502496A (ja) * | 2001-09-06 | 2005-01-27 | オリン コーポレイション | 低いプロフィールの結合向上を有する銅箔 |
JP2007307767A (ja) * | 2006-05-17 | 2007-11-29 | Mitsui Mining & Smelting Co Ltd | キャリア箔付銅箔、キャリア箔付銅箔の製造方法、キャリア箔付表面処理銅箔及びそのキャリア箔付表面処理銅箔を用いた銅張積層板 |
JP2012094682A (ja) * | 2010-10-27 | 2012-05-17 | Ngk Spark Plug Co Ltd | 多層配線基板の製造方法 |
WO2012133638A1 (ja) * | 2011-03-30 | 2012-10-04 | 三井金属鉱業株式会社 | 多層プリント配線板の製造方法及びその製造方法で得られる多層プリント配線板 |
JP2015050314A (ja) * | 2013-08-31 | 2015-03-16 | イビデン株式会社 | 結合型プリント配線板及びその製造方法 |
JP5859155B1 (ja) * | 2015-03-11 | 2016-02-10 | 福田金属箔粉工業株式会社 | 複合金属箔及びその製造方法並びにプリント配線板 |
JP2016026914A (ja) * | 2014-04-02 | 2016-02-18 | Jx日鉱日石金属株式会社 | キャリア付金属箔を有する積層体 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4726855Y1 (ja) | 1968-07-06 | 1972-08-17 | ||
JPS5859155A (ja) | 1981-10-01 | 1983-04-08 | Hashimoto Denki Co Ltd | 薄板の上面搬送による仕分方法 |
JPS6134385A (ja) | 1984-07-26 | 1986-02-18 | Matsushita Electric Ind Co Ltd | 密閉型回転圧縮機 |
US6596391B2 (en) * | 1997-05-14 | 2003-07-22 | Honeywell International Inc. | Very ultra thin conductor layers for printed wiring boards |
US6346335B1 (en) * | 2000-03-10 | 2002-02-12 | Olin Corporation | Copper foil composite including a release layer |
JP3261119B2 (ja) * | 2000-05-16 | 2002-02-25 | 三井金属鉱業株式会社 | プリント配線板の製造方法 |
US7026059B2 (en) | 2000-09-22 | 2006-04-11 | Circuit Foil Japan Co., Ltd. | Copper foil for high-density ultrafine printed wiring boad |
JP2005054240A (ja) * | 2003-08-05 | 2005-03-03 | Fuji Photo Film Co Ltd | 導電性フィルムおよびその作製方法 |
JP4273895B2 (ja) | 2003-09-24 | 2009-06-03 | 日立化成工業株式会社 | 半導体素子搭載用パッケージ基板の製造方法 |
KR100704919B1 (ko) * | 2005-10-14 | 2007-04-09 | 삼성전기주식회사 | 코어층이 없는 기판 및 그 제조 방법 |
TW200804626A (en) | 2006-05-19 | 2008-01-16 | Mitsui Mining & Smelting Co | Copper foil provided with carrier sheet, method for fabricating copper foil provided with carrier sheet, surface-treated copper foil provided with carrier sheet, and copper-clad laminate using the surface-treated copper foil provided with carrier she |
JP5959149B2 (ja) * | 2008-09-05 | 2016-08-02 | 古河電気工業株式会社 | キャリア付き極薄銅箔、並びに銅貼積層板またはプリント配線基板 |
KR101055462B1 (ko) * | 2010-01-07 | 2011-08-08 | 삼성전기주식회사 | 인쇄회로기판 제조용 캐리어와 그 제조방법 및 이를 이용한 인쇄회로기판의 제조방법 |
WO2012133637A1 (ja) * | 2011-03-30 | 2012-10-04 | 三井金属鉱業株式会社 | 多層プリント配線板の製造方法及びその製造方法で得られる多層プリント配線板 |
CN108277513A (zh) * | 2013-06-13 | 2018-07-13 | Jx日矿日石金属株式会社 | 附载体的铜箔、覆铜积层板、印刷电路板、电子机器、及印刷电路板的制造方法 |
JP2015035551A (ja) | 2013-08-09 | 2015-02-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2015207580A (ja) * | 2014-04-17 | 2015-11-19 | 凸版印刷株式会社 | 配線基板およびその製造方法 |
KR101580287B1 (ko) * | 2014-05-02 | 2015-12-24 | 삼성전기주식회사 | 인쇄회로기판, 인쇄회로기판 스트립 및 그 제조방법 |
CN106715118B (zh) * | 2014-10-30 | 2021-04-16 | 三井金属矿业株式会社 | 带载体的铜箔以及使用该带载体的铜箔的印刷线路板的制造方法 |
WO2016104639A1 (ja) * | 2014-12-26 | 2016-06-30 | 日立化成株式会社 | 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 |
JP6058182B1 (ja) * | 2015-07-27 | 2017-01-11 | Jx金属株式会社 | キャリア付銅箔、積層体、プリント配線板の製造方法及び電子機器の製造方法 |
-
2016
- 2016-09-05 WO PCT/JP2016/076047 patent/WO2017149811A1/ja active Application Filing
-
2017
- 2017-02-21 CN CN201780014211.2A patent/CN108699673B/zh active Active
- 2017-02-21 WO PCT/JP2017/006423 patent/WO2017150284A1/ja active Application Filing
- 2017-02-21 US US16/080,442 patent/US10356915B2/en active Active
- 2017-02-21 JP JP2017565853A patent/JP6415760B2/ja active Active
- 2017-02-21 KR KR1020187026556A patent/KR20180113580A/ko not_active Application Discontinuation
- 2017-02-21 KR KR1020207035925A patent/KR102550963B1/ko active IP Right Grant
- 2017-02-21 CN CN202010699030.1A patent/CN111787714A/zh active Pending
- 2017-02-24 TW TW109131381A patent/TWI760846B/zh active
- 2017-02-24 TW TW106106511A patent/TWI709215B/zh active
-
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- 2018-10-01 JP JP2018186892A patent/JP6883010B2/ja active Active
-
2019
- 2019-04-29 US US16/397,449 patent/US10492308B2/en active Active
- 2019-10-18 US US16/657,084 patent/US10888003B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6134385B2 (ja) * | 1980-07-14 | 1986-08-07 | Nippon Denkai Kk | |
JP2005502496A (ja) * | 2001-09-06 | 2005-01-27 | オリン コーポレイション | 低いプロフィールの結合向上を有する銅箔 |
JP2007307767A (ja) * | 2006-05-17 | 2007-11-29 | Mitsui Mining & Smelting Co Ltd | キャリア箔付銅箔、キャリア箔付銅箔の製造方法、キャリア箔付表面処理銅箔及びそのキャリア箔付表面処理銅箔を用いた銅張積層板 |
JP2012094682A (ja) * | 2010-10-27 | 2012-05-17 | Ngk Spark Plug Co Ltd | 多層配線基板の製造方法 |
WO2012133638A1 (ja) * | 2011-03-30 | 2012-10-04 | 三井金属鉱業株式会社 | 多層プリント配線板の製造方法及びその製造方法で得られる多層プリント配線板 |
JP2015050314A (ja) * | 2013-08-31 | 2015-03-16 | イビデン株式会社 | 結合型プリント配線板及びその製造方法 |
JP2016026914A (ja) * | 2014-04-02 | 2016-02-18 | Jx日鉱日石金属株式会社 | キャリア付金属箔を有する積層体 |
JP5859155B1 (ja) * | 2015-03-11 | 2016-02-10 | 福田金属箔粉工業株式会社 | 複合金属箔及びその製造方法並びにプリント配線板 |
Cited By (51)
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---|---|---|---|---|
WO2019082795A1 (ja) * | 2017-10-26 | 2019-05-02 | 三井金属鉱業株式会社 | 極薄銅箔及びキャリア付極薄銅箔、並びにプリント配線板の製造方法 |
KR20220164615A (ko) | 2017-10-26 | 2022-12-13 | 미쓰이금속광업주식회사 | 극박 구리박 및 캐리어 구비 극박 구리박, 그리고 프린트 배선판의 제조 방법 |
KR102661275B1 (ko) * | 2017-10-26 | 2024-04-29 | 미쓰이금속광업주식회사 | 극박 구리박 및 캐리어 구비 극박 구리박, 그리고 프린트 배선판의 제조 방법 |
KR20200021998A (ko) | 2017-10-26 | 2020-03-02 | 미쓰이금속광업주식회사 | 극박 구리박 및 캐리어 구비 극박 구리박, 그리고 프린트 배선판의 제조 방법 |
JPWO2019082795A1 (ja) * | 2017-10-26 | 2020-04-09 | 三井金属鉱業株式会社 | 極薄銅箔及びキャリア付極薄銅箔、並びにプリント配線板の製造方法 |
CN110997313A (zh) * | 2017-10-26 | 2020-04-10 | 三井金属矿业株式会社 | 极薄铜箔和带载体的极薄铜箔、以及印刷电路板的制造方法 |
US11576267B2 (en) | 2017-10-26 | 2023-02-07 | Mitsui Mining & Smelting Co., Ltd. | Ultra-thin copper foil, ultra-thin copper foil with carrier, and method for manufacturing printed wiring board |
US20190141867A1 (en) * | 2017-11-03 | 2019-05-09 | Apaq Technology Co., Ltd. | Shielding film and method of manufacturing the same |
US11765840B2 (en) | 2017-12-27 | 2023-09-19 | Mitsui Mining & Smelting Co., Ltd. | Copper foil with carrier |
CN111278644A (zh) * | 2017-12-27 | 2020-06-12 | 三井金属矿业株式会社 | 带载体的铜箔 |
KR20200102987A (ko) | 2017-12-27 | 2020-09-01 | 미쓰이금속광업주식회사 | 캐리어를 구비한 구리박 |
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KR20230172617A (ko) | 2017-12-27 | 2023-12-22 | 미쓰이금속광업주식회사 | 캐리어를 구비한 구리박 |
KR20200079515A (ko) | 2018-02-20 | 2020-07-03 | 미쓰이금속광업주식회사 | 유리 캐리어를 구비하는 구리박 및 그 제조 방법 |
US11756845B2 (en) | 2018-02-20 | 2023-09-12 | Mitsui Mining & Smelting Co., Ltd. | Copper foil with glass carrier and production method therefor |
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US12058819B2 (en) * | 2018-11-20 | 2024-08-06 | Mitsui Mining & Smelting Co., Ltd. | Multilayer body |
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WO2020105638A1 (ja) * | 2018-11-20 | 2020-05-28 | 三井金属鉱業株式会社 | キャリア付金属箔、及びそれを用いたミリ波アンテナ基板の製造方法 |
US20220022326A1 (en) * | 2018-11-20 | 2022-01-20 | Mitsui Mining & Smelting Co., Ltd. | Multilayer body |
KR20210093849A (ko) | 2018-11-20 | 2021-07-28 | 미쓰이금속광업주식회사 | 캐리어를 구비한 금속박 및 그것을 사용한 밀리미터파 안테나 기판의 제조 방법 |
JPWO2020105535A1 (ja) * | 2018-11-20 | 2021-09-02 | 三井金属鉱業株式会社 | 積層体 |
JP7201405B2 (ja) | 2018-11-20 | 2023-01-10 | 三井金属鉱業株式会社 | 多層配線板の製造方法 |
US11637358B2 (en) | 2018-11-20 | 2023-04-25 | Mitsui Mining & Smelting Co., Ltd. | Carrier-containing metal foil and method for manufacturing millimeter-wave antenna substrate using same |
US11582869B2 (en) * | 2018-12-10 | 2023-02-14 | Guangzhou Fangbang Electronic Co., Ltd. | Composite metal foil and preparation method thereof |
US11961771B2 (en) | 2018-12-18 | 2024-04-16 | Mitsui Mining & Smelting Co., Ltd. | Laminate sheet and method of use thereof |
KR20210104652A (ko) | 2018-12-18 | 2021-08-25 | 미쓰이금속광업주식회사 | 적층 시트 및 그 사용 방법 |
WO2020235537A1 (ja) | 2019-05-20 | 2020-11-26 | 三井金属鉱業株式会社 | キャリア付金属箔並びにその使用方法及び製造方法 |
KR20210137176A (ko) | 2019-05-20 | 2021-11-17 | 미쓰이금속광업주식회사 | 캐리어를 구비하는 금속박 그리고 그 사용 방법 및 제조 방법 |
JP2023504808A (ja) * | 2019-11-27 | 2023-02-07 | ワイエムティー カンパニー リミテッド | キャリア箔付き金属箔、その製造方法、およびそれを含む積層体 |
JP7527677B2 (ja) | 2019-11-27 | 2024-08-05 | ワイエムティー カンパニー リミテッド | キャリア箔付き金属箔、その製造方法、およびそれを含む積層体 |
WO2022102182A1 (ja) | 2020-11-11 | 2022-05-19 | 三井金属鉱業株式会社 | 配線基板の製造方法 |
KR20230104908A (ko) | 2020-11-11 | 2023-07-11 | 미쓰이금속광업주식회사 | 배선 기판의 제조 방법 |
WO2022124116A1 (ja) | 2020-12-08 | 2022-06-16 | 三井金属鉱業株式会社 | キャリア付金属箔及びその製造方法 |
KR20230117139A (ko) | 2020-12-08 | 2023-08-07 | 미쓰이금속광업주식회사 | 캐리어를 구비하는 금속박 및 그 제조 방법 |
KR20230124640A (ko) | 2020-12-23 | 2023-08-25 | 미쓰이금속광업주식회사 | 배선 기판 및 그 트리밍 방법, 그리고 다층 배선판 |
WO2022138238A1 (ja) | 2020-12-23 | 2022-06-30 | 三井金属鉱業株式会社 | 配線基板及びそのトリミング方法、並びに多層配線板 |
WO2022209978A1 (ja) | 2021-03-30 | 2022-10-06 | 三井金属鉱業株式会社 | 多層基板の製造方法及び配線基板 |
KR20230164023A (ko) | 2021-03-30 | 2023-12-01 | 미쓰이금속광업주식회사 | 다층 기판의 제조 방법 및 배선 기판 |
KR20240027704A (ko) | 2021-06-24 | 2024-03-04 | 미쓰이금속광업주식회사 | 배선 기판의 제조 방법 |
WO2022270370A1 (ja) | 2021-06-24 | 2022-12-29 | 三井金属鉱業株式会社 | 配線基板の製造方法 |
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TW201742225A (zh) | 2017-12-01 |
CN111787714A (zh) | 2020-10-16 |
JP6415760B2 (ja) | 2018-10-31 |
CN108699673B (zh) | 2020-09-11 |
TW202111906A (zh) | 2021-03-16 |
JP6883010B2 (ja) | 2021-06-02 |
KR102550963B1 (ko) | 2023-07-05 |
US20200053885A1 (en) | 2020-02-13 |
US20190029125A1 (en) | 2019-01-24 |
JPWO2017150284A1 (ja) | 2018-04-19 |
TWI760846B (zh) | 2022-04-11 |
US10356915B2 (en) | 2019-07-16 |
TWI709215B (zh) | 2020-11-01 |
CN108699673A (zh) | 2018-10-23 |
US20190261518A1 (en) | 2019-08-22 |
WO2017149811A1 (ja) | 2017-09-08 |
US10492308B2 (en) | 2019-11-26 |
US10888003B2 (en) | 2021-01-05 |
JP2019031739A (ja) | 2019-02-28 |
KR20180113580A (ko) | 2018-10-16 |
KR20200142121A (ko) | 2020-12-21 |
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