WO2017056376A1 - 貼り合わせsoiウェーハの製造方法 - Google Patents
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Abstract
Description
前記ベースウェーハとして、抵抗率が100Ω・cm以上、初期格子間酸素濃度が10ppma以下であるシリコン単結晶ウェーハを準備する工程と、
前記ベースウェーハに、酸化性雰囲気下、700℃以上1000℃以下の温度で5時間以上の熱処理を施すことにより、前記ベースウェーハ表面にシリコン酸化膜を形成する工程と、
前記シリコン酸化膜を介して前記ベースウェーハと前記ボンドウェーハを貼り合わせる工程と、
貼り合わせた前記ボンドウェーハを薄膜化してSOI層を形成する工程とを有することを特徴とする貼り合わせSOIウェーハの製造方法を提供する。
前記ベースウェーハ表面に形成する前記シリコン酸化膜の厚さを1μm以上とすることが好ましい。
上述したように、高抵抗低酸素基板を使用した場合、スリップ転位が発生しやすくなり、また、抵抗率の変動を抑制するためには、ドナーを消滅させる長時間の熱処理を必要とし、製造効率が悪いという問題があった。
ベースウェーハとして、酸素濃度6.8ppma(ASTM’79)、抵抗率が2000Ω・cm、直径300mm、p型、結晶方位<100>のCZシリコン単結晶ウェーハ(窒素ドープなし)を準備した。
ベースウェーハとして、酸素濃度6.8ppma(ASTM’79)、抵抗率が2000Ω・cm、窒素濃度8.9×1013atoms/cm3である直径300mm、p型、結晶方位<100>のCZシリコン単結晶ウェーハを準備した。
ベースウェーハとして、酸素濃度6.8ppma(ASTM’79)、抵抗率が2000Ω・cm、窒素濃度1.4×1014atoms/cm3である直径300mm、p型、結晶方位<100>のCZシリコン単結晶ウェーハを準備した。
ベースウェーハとして、実施例1と同様のCZシリコン単結晶ウェーハを準備した。
ベースウェーハとして、実施例2と同様のCZシリコン単結晶ウェーハを準備した。そして、このベースウェーハに対し、酸化温度1100℃、酸化時間3時間のパイロジェニック酸化で1μmの酸化膜を成長させた。
ベースウェーハとして、実施例2と同様のCZシリコン単結晶ウェーハを準備した。そして、このベースウェーハに対し、酸化温度950℃、酸化時間2時間のパイロジェニック酸化で0.4μmの酸化膜を成長させた。
Claims (3)
- いずれもシリコン単結晶からなるボンドウェーハとベースウェーハとをシリコン酸化膜を介して貼り合わせて貼り合わせSOIウェーハを製造する方法であって、
前記ベースウェーハとして、抵抗率が100Ω・cm以上、初期格子間酸素濃度が10ppma以下であるシリコン単結晶ウェーハを準備する工程と、
前記ベースウェーハに、酸化性雰囲気下、700℃以上1000℃以下の温度で5時間以上の熱処理を施すことにより、前記ベースウェーハ表面にシリコン酸化膜を形成する工程と、
前記シリコン酸化膜を介して前記ベースウェーハと前記ボンドウェーハを貼り合わせる工程と、
貼り合わせた前記ボンドウェーハを薄膜化してSOI層を形成する工程とを有することを特徴とする貼り合わせSOIウェーハの製造方法。 - 前記ベースウェーハとして、窒素濃度が1×1013~1×1015atoms/cm3である前記シリコン単結晶ウェーハを用いることを特徴とする請求項1に記載の貼り合わせSOIウェーハの製造方法。
- 前記シリコン酸化膜を形成する工程において、
前記ベースウェーハ表面に形成する前記シリコン酸化膜の厚さを1μm以上とすることを特徴とする請求項1または請求項2に記載の貼り合わせSOIウェーハの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16850559.2A EP3358600B1 (en) | 2015-09-28 | 2016-08-22 | Method for producing bonded soi wafer |
KR1020187006698A KR102509310B1 (ko) | 2015-09-28 | 2016-08-22 | 접합 soi 웨이퍼의 제조방법 |
CN201680049105.3A CN108028170B (zh) | 2015-09-28 | 2016-08-22 | 贴合式soi晶圆的制造方法 |
US15/754,003 US11056381B2 (en) | 2015-09-28 | 2016-08-22 | Method for producing bonded SOI wafer |
SG11201801408YA SG11201801408YA (en) | 2015-09-28 | 2016-08-22 | Method for producing bonded soi wafer |
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JP2015-189399 | 2015-09-28 | ||
JP2015189399A JP6447439B2 (ja) | 2015-09-28 | 2015-09-28 | 貼り合わせsoiウェーハの製造方法 |
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CN (1) | CN108028170B (ja) |
SG (1) | SG11201801408YA (ja) |
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DE102016112139B3 (de) * | 2016-07-01 | 2018-01-04 | Infineon Technologies Ag | Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper |
TWI668739B (zh) * | 2018-04-03 | 2019-08-11 | 環球晶圓股份有限公司 | 磊晶基板及其製造方法 |
US10943813B2 (en) * | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
JP7242220B2 (ja) * | 2018-09-03 | 2023-03-20 | キヤノン株式会社 | 接合ウェハ及びその製造方法、並びにスルーホール形成方法 |
KR102200437B1 (ko) | 2018-09-12 | 2021-01-08 | 주식회사 이피지 | 관통형 전극 제조 방법 |
JP7345245B2 (ja) | 2018-11-13 | 2023-09-15 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
FR3091010B1 (fr) * | 2018-12-24 | 2020-12-04 | Soitec Silicon On Insulator | Structure de type semi-conducteur pour applications digitales et radiofréquences, et procédé de fabrication d’une telle structure |
US11932964B2 (en) | 2019-04-05 | 2024-03-19 | Tokuyama Coporation | Polycrystalline silicon material |
JPWO2020204141A1 (ja) | 2019-04-05 | 2020-10-08 | ||
FR3110283B1 (fr) * | 2020-05-18 | 2022-04-15 | Soitec Silicon On Insulator | Procédé de fabrication d’un substrat semi-conducteur sur isolant pour applications radiofréquences |
FR3110282B1 (fr) * | 2020-05-18 | 2022-04-15 | Soitec Silicon On Insulator | Procédé de fabrication d’un substrat semi-conducteur sur isolant pour applications radiofréquences |
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KR20180058713A (ko) | 2018-06-01 |
EP3358600B1 (en) | 2022-08-03 |
CN108028170B (zh) | 2022-03-15 |
JP2017069240A (ja) | 2017-04-06 |
EP3358600A4 (en) | 2019-05-29 |
JP6447439B2 (ja) | 2019-01-09 |
US11056381B2 (en) | 2021-07-06 |
EP3358600A1 (en) | 2018-08-08 |
KR102509310B1 (ko) | 2023-03-13 |
SG11201801408YA (en) | 2018-03-28 |
CN108028170A (zh) | 2018-05-11 |
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TWI698907B (zh) | 2020-07-11 |
US20180247860A1 (en) | 2018-08-30 |
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