WO2014208341A1 - 反射電極用または配線電極用Ａｇ合金膜、反射電極または配線電極、およびＡｇ合金スパッタリングターゲット - Google Patents

反射電極用または配線電極用Ａｇ合金膜、反射電極または配線電極、およびＡｇ合金スパッタリングターゲット Download PDF

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Publication number
WO2014208341A1
WO2014208341A1 PCT/JP2014/065518 JP2014065518W WO2014208341A1 WO 2014208341 A1 WO2014208341 A1 WO 2014208341A1 JP 2014065518 W JP2014065518 W JP 2014065518W WO 2014208341 A1 WO2014208341 A1 WO 2014208341A1
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WIPO (PCT)
Prior art keywords
film
alloy film
alloy
atomic
electrode
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Ceased
Application number
PCT/JP2014/065518
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English (en)
French (fr)
Japanese (ja)
Inventor
陽子 志田
後藤　裕史
元隆 越智
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Kobe Steel Ltd
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Kobe Steel Ltd
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Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to KR1020157036037A priority Critical patent/KR101764053B1/ko
Priority to US14/889,334 priority patent/US9947429B2/en
Priority to CN201480035394.2A priority patent/CN105324510B/zh
Publication of WO2014208341A1 publication Critical patent/WO2014208341A1/ja
Anticipated expiration legal-status Critical
Priority to US15/623,975 priority patent/US20170330643A1/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53247—Noble-metal alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12896—Ag-base component

Definitions

  • the Ag alloy film does not form a passive film, and thus is susceptible to external influences. Specifically, it reacts with sulfur to form silver sulfide, or reacts with halogen to form silver halide. There are also disadvantages such as easy aggregation by heating.
  • Patent Document 1 discloses that an Ag alloy film containing one or two elements selected from the group consisting of Bi and Sb in a total amount of 0.01 to 4 atomic% is used as an Ag original film. It has been shown that, while maintaining high reflectance, Ag aggregation and crystal grain growth are suppressed, and a decrease in reflectance over time is suppressed.
  • this silver oxide is formed is that, as described above, Ag does not form a passive film, and therefore is easily oxidized by the active oxygen generated by the UV irradiation or O 2 plasma.
  • the Ag alloy film of the present invention that has solved the above-mentioned problems is an Ag alloy film used for a reflective electrode or a wiring electrode, and includes In more than 2.0 atomic% and 2.7 atomic% or less; Zn is 2 It contains at least one of more than 0.0 atomic% and 3.5 atomic% or less.
  • the reflective electrode or the wiring electrode of the present invention is such that a transparent conductive film having a film thickness of 5 nm or more and less than 25 nm is formed only directly above the Ag alloy film or directly above and immediately below the Ag alloy film.
  • Japanese Patent Application No. 2012-229083 prior to the filing of the present application.
  • the upper limit of each content of In and Zn is set to 2.0 from the viewpoint of securing a low electrical resistivity and a high reflectance, which are almost the same level as that of a pure Ag film. Strictly set as atomic%.
  • these acceptance criteria are slightly lower than those of the prior application from the viewpoint of ensuring the minimum level applicable to the reflective electrode or the wiring electrode.
  • the thickness of the Ag alloy film of the present invention is preferably in the range of 30 to 200 nm.
  • the film thickness is preferably in the range of 30 to 200 nm.
  • the film thickness is preferably in the range of 30 to 200 nm.
  • the Ag alloy film is desirably formed by a sputtering method using a sputtering target.
  • the method for forming a thin film include an ink jet coating method, a vacuum deposition method, and a sputtering method.
  • the sputtering method is excellent in ease of alloying, productivity, and film thickness uniformity. This is because a homogeneous film can be obtained by uniformly dispersing in the Ag matrix, and the above-described stable characteristics can be obtained.
  • a sputtering target containing at least one selected from the above is used. Further, it is preferable to use a sputtering target containing 0.01 to 2.0 atomic% of Bi as the sputtering target.
  • the amount of Bi in the formed Ag alloy film decreases with respect to the amount of Bi in the sputtering target. In the present invention, after considering the practical amount of Bi that can be included in the sputtering target, the amount of Bi that is approximately twice the amount of Bi in the Ag alloy film is included in the sputtering target.
  • the method for producing the reflective electrode or the wiring electrode of the present invention is not particularly limited, but heat treatment (post-annealing) may be performed after the formation of the transparent conductive film.
  • the post-annealing temperature is preferably 200 ° C. or higher, more preferably 250 ° C. or higher, preferably 350 ° C. or lower, more preferably 300 ° C. or lower.
  • the post-annealing time is preferably about 10 minutes or more, more preferably about 15 minutes or more, preferably about 120 minutes or less, more preferably about 60 minutes or less.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
PCT/JP2014/065518 2013-06-26 2014-06-11 反射電極用または配線電極用Ａｇ合金膜、反射電極または配線電極、およびＡｇ合金スパッタリングターゲット Ceased WO2014208341A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020157036037A KR101764053B1 (ko) 2013-06-26 2014-06-11 반사 전극용 또는 배선 전극용 Ag 합금막, 반사 전극 또는 배선 전극, 및 Ag 합금 스퍼터링 타겟
US14/889,334 US9947429B2 (en) 2013-06-26 2014-06-11 Ag alloy film for reflecting electrode or wiring electrode, reflecting electrode or wiring electrode, and Ag alloy sputtering target
CN201480035394.2A CN105324510B (zh) 2013-06-26 2014-06-11 反射电极用或布线电极用Ag合金膜、反射电极或布线电极、和Ag合金溅射靶
US15/623,975 US20170330643A1 (en) 2013-06-26 2017-06-15 Ag alloy film for reflecting electrode or wiring electrode, reflecting electrode or wiring electrode, and ag alloy sputtering target

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-134344 2013-06-26
JP2013134344 2013-06-26

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US14/889,334 A-371-Of-International US9947429B2 (en) 2013-06-26 2014-06-11 Ag alloy film for reflecting electrode or wiring electrode, reflecting electrode or wiring electrode, and Ag alloy sputtering target
US15/623,975 Division US20170330643A1 (en) 2013-06-26 2017-06-15 Ag alloy film for reflecting electrode or wiring electrode, reflecting electrode or wiring electrode, and ag alloy sputtering target

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WO2014208341A1 true WO2014208341A1 (ja) 2014-12-31

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PCT/JP2014/065518 Ceased WO2014208341A1 (ja) 2013-06-26 2014-06-11 反射電極用または配線電極用Ａｇ合金膜、反射電極または配線電極、およびＡｇ合金スパッタリングターゲット

Country Status (6)

Country Link
US (2) US9947429B2 (enExample)
JP (1) JP6208629B2 (enExample)
KR (1) KR101764053B1 (enExample)
CN (1) CN105324510B (enExample)
TW (1) TWI527912B (enExample)
WO (1) WO2014208341A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018014346A (ja) * 2016-07-19 2018-01-25 豊田合成株式会社 発光素子

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Publication number Priority date Publication date Assignee Title
JP6630433B2 (ja) * 2016-05-12 2020-01-15 アルプスアルパイン株式会社 入力装置
US10355210B2 (en) * 2017-10-30 2019-07-16 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Manufacturing method of OLED substrate and manufacturing method of OLED display device
CN114761608A (zh) * 2019-12-02 2022-07-15 三菱综合材料株式会社 Ag合金膜及Ag合金溅射靶
JP6908164B2 (ja) * 2019-12-02 2021-07-21 三菱マテリアル株式会社 Ａｇ合金膜
KR20220097789A (ko) 2020-12-31 2022-07-08 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
KR20240025131A (ko) * 2022-08-17 2024-02-27 삼성디스플레이 주식회사 표시 패널 및 이를 구비하는 표시 장치
TWI897345B (zh) * 2024-02-19 2025-09-11 瀚宇彩晶股份有限公司 畫素陣列基板

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US20170330643A1 (en) 2017-11-16
JP2015028211A (ja) 2015-02-12
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