KR101764053B1 - 반사 전극용 또는 배선 전극용 Ag 합금막, 반사 전극 또는 배선 전극, 및 Ag 합금 스퍼터링 타겟 - Google Patents
반사 전극용 또는 배선 전극용 Ag 합금막, 반사 전극 또는 배선 전극, 및 Ag 합금 스퍼터링 타겟 Download PDFInfo
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- KR101764053B1 KR101764053B1 KR1020157036037A KR20157036037A KR101764053B1 KR 101764053 B1 KR101764053 B1 KR 101764053B1 KR 1020157036037 A KR1020157036037 A KR 1020157036037A KR 20157036037 A KR20157036037 A KR 20157036037A KR 101764053 B1 KR101764053 B1 KR 101764053B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
- F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
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- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
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- H01—ELECTRIC ELEMENTS
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- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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- H01—ELECTRIC ELEMENTS
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
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- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013134344 | 2013-06-26 | ||
| JPJP-P-2013-134344 | 2013-06-26 | ||
| PCT/JP2014/065518 WO2014208341A1 (ja) | 2013-06-26 | 2014-06-11 | 反射電極用または配線電極用Ag合金膜、反射電極または配線電極、およびAg合金スパッタリングターゲット |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20160013102A KR20160013102A (ko) | 2016-02-03 |
| KR101764053B1 true KR101764053B1 (ko) | 2017-08-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157036037A Expired - Fee Related KR101764053B1 (ko) | 2013-06-26 | 2014-06-11 | 반사 전극용 또는 배선 전극용 Ag 합금막, 반사 전극 또는 배선 전극, 및 Ag 합금 스퍼터링 타겟 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9947429B2 (enExample) |
| JP (1) | JP6208629B2 (enExample) |
| KR (1) | KR101764053B1 (enExample) |
| CN (1) | CN105324510B (enExample) |
| TW (1) | TWI527912B (enExample) |
| WO (1) | WO2014208341A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3457259B1 (en) * | 2016-05-12 | 2021-07-21 | Alps Alpine Co., Ltd. | Input device |
| JP6783984B2 (ja) * | 2016-07-19 | 2020-11-11 | 豊田合成株式会社 | 発光素子 |
| US10355210B2 (en) * | 2017-10-30 | 2019-07-16 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Manufacturing method of OLED substrate and manufacturing method of OLED display device |
| JP6908164B2 (ja) * | 2019-12-02 | 2021-07-21 | 三菱マテリアル株式会社 | Ag合金膜 |
| WO2021111974A1 (ja) * | 2019-12-02 | 2021-06-10 | 三菱マテリアル株式会社 | Ag合金膜、Ag合金スパッタリングターゲット |
| KR20220097789A (ko) | 2020-12-31 | 2022-07-08 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
| KR20240025131A (ko) * | 2022-08-17 | 2024-02-27 | 삼성디스플레이 주식회사 | 표시 패널 및 이를 구비하는 표시 장치 |
| TWI897345B (zh) * | 2024-02-19 | 2025-09-11 | 瀚宇彩晶股份有限公司 | 畫素陣列基板 |
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| JP2004126497A (ja) | 2002-08-08 | 2004-04-22 | Kobe Steel Ltd | 光反射膜およびこれを用いた液晶表示素子、ならびに光反射膜用スパッタリングターゲット |
| JP2005100604A (ja) * | 2003-08-20 | 2005-04-14 | Mitsubishi Materials Corp | 光記録媒体の反射膜および反射膜形成用銀合金スパッタリングターゲット |
| JP2010225586A (ja) | 2008-11-10 | 2010-10-07 | Kobe Steel Ltd | 有機elディスプレイ用の反射アノード電極および配線膜 |
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| JPH08203335A (ja) | 1995-01-30 | 1996-08-09 | Toppan Printing Co Ltd | 透明導電膜及びその形成方法 |
| JP3655907B2 (ja) | 2002-08-20 | 2005-06-02 | 株式会社神戸製鋼所 | 光情報記録媒体用反射膜と半透過反射膜、および光情報記録媒体 |
| JP3997177B2 (ja) | 2002-08-09 | 2007-10-24 | 株式会社神戸製鋼所 | 電磁波シールド用Ag合金膜、電磁波シールド用Ag合金膜形成体および電磁波シールド用Ag合金膜の形成用のAg合金スパッタリングターゲット |
| US7514037B2 (en) | 2002-08-08 | 2009-04-07 | Kobe Steel, Ltd. | AG base alloy thin film and sputtering target for forming AG base alloy thin film |
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| DE10327336A1 (de) * | 2003-06-16 | 2005-01-27 | W. C. Heraeus Gmbh & Co. Kg | Legierung und deren Verwendung |
| JP2005048231A (ja) | 2003-07-28 | 2005-02-24 | Ishifuku Metal Ind Co Ltd | スパッタリングターゲット材 |
| JP4320000B2 (ja) | 2004-04-21 | 2009-08-26 | 株式会社神戸製鋼所 | 光情報記録媒体用半透過反射膜と反射膜、および光情報記録媒体ならびにスパッタリングターゲット |
| TWI325134B (en) | 2004-04-21 | 2010-05-21 | Kobe Steel Ltd | Semi-reflective film and reflective film for optical information recording medium, optical information recording medium, and sputtering target |
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| JP4418777B2 (ja) | 2005-06-10 | 2010-02-24 | 石福金属興業株式会社 | Ag基合金からなるスパッタリングターゲット材および薄膜 |
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| JP4527624B2 (ja) * | 2005-07-22 | 2010-08-18 | 株式会社神戸製鋼所 | Ag合金反射膜を有する光情報媒体 |
| JP2007035104A (ja) | 2005-07-22 | 2007-02-08 | Kobe Steel Ltd | 光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
| JP4377861B2 (ja) * | 2005-07-22 | 2009-12-02 | 株式会社神戸製鋼所 | 光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
| KR100667081B1 (ko) * | 2005-11-02 | 2007-01-11 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
| JP5059512B2 (ja) | 2007-02-28 | 2012-10-24 | 株式会社神戸製鋼所 | 高強度、高延性Al合金およびその製造方法 |
| US8399100B2 (en) | 2007-09-25 | 2013-03-19 | Kobe Steel, Ltd. | Reflection film, reflection film laminate, LED, organic EL display, and organic EL illuminating instrument |
| JP2010225572A (ja) | 2008-11-10 | 2010-10-07 | Kobe Steel Ltd | 有機elディスプレイ用の反射アノード電極および配線膜 |
| JP5830908B2 (ja) * | 2011-04-06 | 2015-12-09 | 三菱マテリアル株式会社 | 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法 |
| JP5806653B2 (ja) * | 2011-12-27 | 2015-11-10 | 株式会社神戸製鋼所 | 反射電極用Ag合金膜、反射電極、およびAg合金スパッタリングターゲット |
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2014
- 2014-06-11 WO PCT/JP2014/065518 patent/WO2014208341A1/ja not_active Ceased
- 2014-06-11 KR KR1020157036037A patent/KR101764053B1/ko not_active Expired - Fee Related
- 2014-06-11 US US14/889,334 patent/US9947429B2/en not_active Expired - Fee Related
- 2014-06-11 CN CN201480035394.2A patent/CN105324510B/zh not_active Expired - Fee Related
- 2014-06-24 TW TW103121716A patent/TWI527912B/zh not_active IP Right Cessation
- 2014-06-26 JP JP2014131913A patent/JP6208629B2/ja not_active Expired - Fee Related
-
2017
- 2017-06-15 US US15/623,975 patent/US20170330643A1/en not_active Abandoned
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004126497A (ja) | 2002-08-08 | 2004-04-22 | Kobe Steel Ltd | 光反射膜およびこれを用いた液晶表示素子、ならびに光反射膜用スパッタリングターゲット |
| JP2005100604A (ja) * | 2003-08-20 | 2005-04-14 | Mitsubishi Materials Corp | 光記録媒体の反射膜および反射膜形成用銀合金スパッタリングターゲット |
| JP2010225586A (ja) | 2008-11-10 | 2010-10-07 | Kobe Steel Ltd | 有機elディスプレイ用の反射アノード電極および配線膜 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160013102A (ko) | 2016-02-03 |
| JP6208629B2 (ja) | 2017-10-04 |
| TW201514325A (zh) | 2015-04-16 |
| WO2014208341A1 (ja) | 2014-12-31 |
| US9947429B2 (en) | 2018-04-17 |
| CN105324510B (zh) | 2018-12-14 |
| TWI527912B (zh) | 2016-04-01 |
| US20160104549A1 (en) | 2016-04-14 |
| US20170330643A1 (en) | 2017-11-16 |
| CN105324510A (zh) | 2016-02-10 |
| JP2015028211A (ja) | 2015-02-12 |
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