WO2014077089A1 - 金属アルコキシド化合物、薄膜形成用原料、薄膜の製造方法及びアルコール化合物 - Google Patents
金属アルコキシド化合物、薄膜形成用原料、薄膜の製造方法及びアルコール化合物 Download PDFInfo
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- WO2014077089A1 WO2014077089A1 PCT/JP2013/078493 JP2013078493W WO2014077089A1 WO 2014077089 A1 WO2014077089 A1 WO 2014077089A1 JP 2013078493 W JP2013078493 W JP 2013078493W WO 2014077089 A1 WO2014077089 A1 WO 2014077089A1
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- WIPO (PCT)
- Prior art keywords
- compound
- thin film
- metal
- metal alkoxide
- raw material
- Prior art date
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- -1 alkoxide compound Chemical class 0.000 title claims abstract description 149
- 239000010409 thin film Substances 0.000 title claims abstract description 138
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 125
- 239000002184 metal Substances 0.000 title claims abstract description 123
- 238000004519 manufacturing process Methods 0.000 title claims description 62
- 239000007858 starting material Substances 0.000 title abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052802 copper Inorganic materials 0.000 claims abstract description 43
- 239000010949 copper Substances 0.000 claims abstract description 43
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 42
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 30
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 30
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 125000004429 atom Chemical group 0.000 claims abstract description 16
- 239000002994 raw material Substances 0.000 claims description 81
- 239000010408 film Substances 0.000 claims description 32
- 230000008016 vaporization Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 229910017052 cobalt Chemical group 0.000 claims description 10
- 239000010941 cobalt Chemical group 0.000 claims description 10
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 31
- 230000000704 physical effect Effects 0.000 abstract description 10
- 150000001875 compounds Chemical class 0.000 description 206
- 238000000034 method Methods 0.000 description 55
- 239000002243 precursor Substances 0.000 description 47
- 238000006243 chemical reaction Methods 0.000 description 45
- 239000013078 crystal Substances 0.000 description 40
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 36
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 35
- 239000007789 gas Substances 0.000 description 34
- 239000000243 solution Substances 0.000 description 33
- 238000012916 structural analysis Methods 0.000 description 32
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 30
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 30
- 229910052719 titanium Inorganic materials 0.000 description 30
- 239000010936 titanium Substances 0.000 description 30
- 239000000203 mixture Substances 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 26
- 239000007787 solid Substances 0.000 description 23
- 230000009467 reduction Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 20
- 238000004458 analytical method Methods 0.000 description 19
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 16
- 238000000151 deposition Methods 0.000 description 16
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 16
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 15
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 15
- 230000008021 deposition Effects 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 239000002245 particle Substances 0.000 description 14
- 239000002904 solvent Substances 0.000 description 14
- 238000005755 formation reaction Methods 0.000 description 13
- 238000005979 thermal decomposition reaction Methods 0.000 description 13
- 238000000921 elemental analysis Methods 0.000 description 12
- 238000002844 melting Methods 0.000 description 12
- 230000008018 melting Effects 0.000 description 12
- 229910044991 metal oxide Inorganic materials 0.000 description 12
- 150000004706 metal oxides Chemical class 0.000 description 12
- 238000009834 vaporization Methods 0.000 description 12
- 239000005749 Copper compound Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000001816 cooling Methods 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 11
- 239000003921 oil Substances 0.000 description 11
- 229910052708 sodium Inorganic materials 0.000 description 11
- 239000011734 sodium Substances 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 150000001880 copper compounds Chemical class 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 239000003960 organic solvent Substances 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000002269 spontaneous effect Effects 0.000 description 9
- 238000005160 1H NMR spectroscopy Methods 0.000 description 8
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 8
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 8
- 229940125904 compound 1 Drugs 0.000 description 8
- 239000000706 filtrate Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 8
- 235000019341 magnesium sulphate Nutrition 0.000 description 8
- 239000012434 nucleophilic reagent Substances 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 7
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical class C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000002808 molecular sieve Substances 0.000 description 7
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- QFYBRRIPNPVECS-UHFFFAOYSA-N copper;methanol Chemical compound [Cu].OC.OC QFYBRRIPNPVECS-UHFFFAOYSA-N 0.000 description 6
- 229910052735 hafnium Inorganic materials 0.000 description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 6
- 239000003446 ligand Substances 0.000 description 6
- 150000002736 metal compounds Chemical class 0.000 description 6
- 239000011259 mixed solution Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000012044 organic layer Substances 0.000 description 6
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052726 zirconium Inorganic materials 0.000 description 6
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 5
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 5
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 5
- 239000013110 organic ligand Substances 0.000 description 5
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 238000003852 thin film production method Methods 0.000 description 5
- BNDRWEVUODOUDW-UHFFFAOYSA-N 3-Hydroxy-3-methylbutan-2-one Chemical compound CC(=O)C(C)(C)O BNDRWEVUODOUDW-UHFFFAOYSA-N 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- TXGJTWACJNYNOJ-UHFFFAOYSA-N hexane-2,4-diol Chemical compound CCC(O)CC(C)O TXGJTWACJNYNOJ-UHFFFAOYSA-N 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- FPKWGRVMLLIFSY-UHFFFAOYSA-N 3-methoxy-2,2-dimethyloxirane Chemical compound COC1OC1(C)C FPKWGRVMLLIFSY-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 229910052689 Holmium Inorganic materials 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910052765 Lutetium Inorganic materials 0.000 description 3
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 229910052777 Praseodymium Inorganic materials 0.000 description 3
- 229910052773 Promethium Inorganic materials 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 229910052772 Samarium Inorganic materials 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- 229910052775 Thulium Inorganic materials 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 238000000560 X-ray reflectometry Methods 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 3
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 3
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 3
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 3
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 3
- 229910052752 metalloid Inorganic materials 0.000 description 3
- 150000002738 metalloids Chemical class 0.000 description 3
- JDQLUYWHCUWSJE-UHFFFAOYSA-N methanolate;titanium(3+) Chemical compound [Ti+3].[O-]C.[O-]C.[O-]C JDQLUYWHCUWSJE-UHFFFAOYSA-N 0.000 description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 238000000197 pyrolysis Methods 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 3
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 2
- BBFMAVRMQHVOPM-UHFFFAOYSA-N 1,1-dimethoxy-2-methylbutan-2-ol Chemical compound CCC(C)(O)C(OC)OC BBFMAVRMQHVOPM-UHFFFAOYSA-N 0.000 description 2
- QEGNUYASOUJEHD-UHFFFAOYSA-N 1,1-dimethylcyclohexane Chemical compound CC1(C)CCCCC1 QEGNUYASOUJEHD-UHFFFAOYSA-N 0.000 description 2
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- FTFYDDRPCCMKBT-UHFFFAOYSA-N 1-butylcyclopenta-1,3-diene Chemical compound CCCCC1=CC=CC1 FTFYDDRPCCMKBT-UHFFFAOYSA-N 0.000 description 2
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 description 2
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 description 2
- AKPLTHZVVWBOPT-UHFFFAOYSA-N 2,2-diethylbutane-1,3-diol Chemical compound CCC(CC)(CO)C(C)O AKPLTHZVVWBOPT-UHFFFAOYSA-N 0.000 description 2
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- DSKYSDCYIODJPC-UHFFFAOYSA-N 2-butyl-2-ethylpropane-1,3-diol Chemical compound CCCCC(CC)(CO)CO DSKYSDCYIODJPC-UHFFFAOYSA-N 0.000 description 2
- 125000003229 2-methylhexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 description 2
- QWGRWMMWNDWRQN-UHFFFAOYSA-N 2-methylpropane-1,3-diol Chemical compound OCC(C)CO QWGRWMMWNDWRQN-UHFFFAOYSA-N 0.000 description 2
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910021580 Cobalt(II) chloride Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000003747 Grignard reaction Methods 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- ZXZMQWZQMZHFOR-UHFFFAOYSA-L azane;dichloronickel Chemical compound N.N.N.N.N.N.Cl[Ni]Cl ZXZMQWZQMZHFOR-UHFFFAOYSA-L 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000004700 cobalt complex Chemical class 0.000 description 2
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 2
- 229940125782 compound 2 Drugs 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- ILPNRWUGFSPGAA-UHFFFAOYSA-N heptane-2,4-dione Chemical compound CCCC(=O)CC(C)=O ILPNRWUGFSPGAA-UHFFFAOYSA-N 0.000 description 2
- NDOGLIPWGGRQCO-UHFFFAOYSA-N hexane-2,4-dione Chemical compound CCC(=O)CC(C)=O NDOGLIPWGGRQCO-UHFFFAOYSA-N 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910017053 inorganic salt Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- FRIJBUGBVQZNTB-UHFFFAOYSA-M magnesium;ethane;bromide Chemical compound [Mg+2].[Br-].[CH2-]C FRIJBUGBVQZNTB-UHFFFAOYSA-M 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- AICOOMRHRUFYCM-ZRRPKQBOSA-N oxazine, 1 Chemical compound C([C@@H]1[C@H](C(C[C@]2(C)[C@@H]([C@H](C)N(C)C)[C@H](O)C[C@]21C)=O)CC1=CC2)C[C@H]1[C@@]1(C)[C@H]2N=C(C(C)C)OC1 AICOOMRHRUFYCM-ZRRPKQBOSA-N 0.000 description 2
- 238000006864 oxidative decomposition reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 2
- GTCCGKPBSJZVRZ-UHFFFAOYSA-N pentane-2,4-diol Chemical compound CC(O)CC(C)O GTCCGKPBSJZVRZ-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 2
- XRVCFZPJAHWYTB-UHFFFAOYSA-N prenderol Chemical compound CCC(CC)(CO)CO XRVCFZPJAHWYTB-UHFFFAOYSA-N 0.000 description 2
- 229950006800 prenderol Drugs 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 229960004063 propylene glycol Drugs 0.000 description 2
- 235000013772 propylene glycol Nutrition 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical group 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 235000015067 sauces Nutrition 0.000 description 2
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 150000003613 toluenes Chemical class 0.000 description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- SYTBZMRGLBWNTM-SNVBAGLBSA-N (R)-flurbiprofen Chemical compound FC1=CC([C@H](C(O)=O)C)=CC=C1C1=CC=CC=C1 SYTBZMRGLBWNTM-SNVBAGLBSA-N 0.000 description 1
- SHXHPUAKLCCLDV-UHFFFAOYSA-N 1,1,1-trifluoropentane-2,4-dione Chemical compound CC(=O)CC(=O)C(F)(F)F SHXHPUAKLCCLDV-UHFFFAOYSA-N 0.000 description 1
- BGYBONWLWSMGNV-UHFFFAOYSA-N 1,4,7,10,13,16,19,22-octaoxacyclotetracosane Chemical compound C1COCCOCCOCCOCCOCCOCCOCCO1 BGYBONWLWSMGNV-UHFFFAOYSA-N 0.000 description 1
- QBPPRVHXOZRESW-UHFFFAOYSA-N 1,4,7,10-tetraazacyclododecane Chemical compound C1CNCCNCCNCCN1 QBPPRVHXOZRESW-UHFFFAOYSA-N 0.000 description 1
- MDAXKAUIABOHTD-UHFFFAOYSA-N 1,4,8,11-tetraazacyclotetradecane Chemical compound C1CNCCNCCCNCCNC1 MDAXKAUIABOHTD-UHFFFAOYSA-N 0.000 description 1
- GHJATKVLNMETBA-UHFFFAOYSA-N 1-(2-methylpropyl)cyclopenta-1,3-diene Chemical group CC(C)CC1=CC=CC1 GHJATKVLNMETBA-UHFFFAOYSA-N 0.000 description 1
- PDGHGLMSHZDIEW-UHFFFAOYSA-N 1-(dimethylamino)-2-methylpentan-2-ol Chemical compound CN(C)CC(CCC)(O)C PDGHGLMSHZDIEW-UHFFFAOYSA-N 0.000 description 1
- MZLDACGYLPYWMZ-UHFFFAOYSA-N 1-(dimethylamino)pentan-2-ol Chemical compound CCCC(O)CN(C)C MZLDACGYLPYWMZ-UHFFFAOYSA-N 0.000 description 1
- JCALRHVFTLBTOZ-UHFFFAOYSA-N 1-butoxy-2-methylpropan-2-ol Chemical compound CCCCOCC(C)(C)O JCALRHVFTLBTOZ-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- BCYNAHGOLUTMDM-UHFFFAOYSA-N 1-ethoxy-2-methylpropan-2-ol Chemical compound CCOCC(C)(C)O BCYNAHGOLUTMDM-UHFFFAOYSA-N 0.000 description 1
- IQSUNBLELDRPEY-UHFFFAOYSA-N 1-ethylcyclopenta-1,3-diene Chemical compound CCC1=CC=CC1 IQSUNBLELDRPEY-UHFFFAOYSA-N 0.000 description 1
- 125000006219 1-ethylpentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- QNLXXWOBNIYLGO-UHFFFAOYSA-N 1-methoxy-2,2,6,6-tetramethylheptane-3,5-dione Chemical compound COCC(C)(C)C(=O)CC(=O)C(C)(C)C QNLXXWOBNIYLGO-UHFFFAOYSA-N 0.000 description 1
- LUZHUVZKSNIJCM-UHFFFAOYSA-N 1-methoxy-2-(methoxymethyl)pentan-3-ol Chemical compound COCC(C(CC)O)COC LUZHUVZKSNIJCM-UHFFFAOYSA-N 0.000 description 1
- MXUXZWFVAPTPAG-UHFFFAOYSA-N 1-methoxy-2-methylpropan-2-ol Chemical compound COCC(C)(C)O MXUXZWFVAPTPAG-UHFFFAOYSA-N 0.000 description 1
- NSIPDYNOORNMRL-UHFFFAOYSA-N 1-methoxy-2-methylpropan-2-olate titanium(4+) Chemical compound COCC(C)(C)O[Ti](OC(C)(C)COC)(OC(C)(C)COC)OC(C)(C)COC NSIPDYNOORNMRL-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- AVFZOVWCLRSYKC-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound CN1CCCC1 AVFZOVWCLRSYKC-UHFFFAOYSA-N 0.000 description 1
- MWQKURVBJZAOSC-UHFFFAOYSA-N 1-propan-2-ylcyclopenta-1,3-diene Chemical compound CC(C)C1=CC=CC1 MWQKURVBJZAOSC-UHFFFAOYSA-N 0.000 description 1
- RZPAXISDLOEXPI-UHFFFAOYSA-N 1-propylcyclopenta-1,3-diene Chemical compound CCCC1=CC=CC1 RZPAXISDLOEXPI-UHFFFAOYSA-N 0.000 description 1
- NWFVDKHZNWEXAD-UHFFFAOYSA-N 1-tert-butylcyclopenta-1,3-diene Chemical group CC(C)(C)C1=CC=CC1 NWFVDKHZNWEXAD-UHFFFAOYSA-N 0.000 description 1
- XEZNGIUYQVAUSS-UHFFFAOYSA-N 18-crown-6 Chemical compound C1COCCOCCOCCOCCOCCO1 XEZNGIUYQVAUSS-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- KLKRGCUPZROPPO-UHFFFAOYSA-N 2,2,6-trimethylheptane-3,5-dione Chemical compound CC(C)C(=O)CC(=O)C(C)(C)C KLKRGCUPZROPPO-UHFFFAOYSA-N 0.000 description 1
- XGGCYHBYGFNQIP-UHFFFAOYSA-N 2,2,6-trimethyloctane-3,5-dione Chemical compound CCC(C)C(=O)CC(=O)C(C)(C)C XGGCYHBYGFNQIP-UHFFFAOYSA-N 0.000 description 1
- DWJDEJZHYRTMRR-UHFFFAOYSA-N 2,2-dimethoxypropanal Chemical compound COC(C)(OC)C=O DWJDEJZHYRTMRR-UHFFFAOYSA-N 0.000 description 1
- LHQYNVWJWUCTSS-UHFFFAOYSA-N 2,2-dimethylheptane-3,5-dione Chemical compound CCC(=O)CC(=O)C(C)(C)C LHQYNVWJWUCTSS-UHFFFAOYSA-N 0.000 description 1
- DBTGFWMBFZBBEF-UHFFFAOYSA-N 2,4-dimethylpentane-2,4-diol Chemical compound CC(C)(O)CC(C)(C)O DBTGFWMBFZBBEF-UHFFFAOYSA-N 0.000 description 1
- CEGGECULKVTYMM-UHFFFAOYSA-N 2,6-dimethylheptane-3,5-dione Chemical compound CC(C)C(=O)CC(=O)C(C)C CEGGECULKVTYMM-UHFFFAOYSA-N 0.000 description 1
- BTLYCAUWPLYLRQ-UHFFFAOYSA-N 2,6-dimethyloctane-3,5-dione Chemical compound CCC(C)C(=O)CC(=O)C(C)C BTLYCAUWPLYLRQ-UHFFFAOYSA-N 0.000 description 1
- NUWMVVUACCUFGK-UHFFFAOYSA-N 2-(methylamino)butan-2-ol Chemical compound CCC(C)(O)NC NUWMVVUACCUFGK-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 229940093475 2-ethoxyethanol Drugs 0.000 description 1
- XFJXTZOILWNVKL-UHFFFAOYSA-N 2-ethylimino-3-methylpentan-3-ol Chemical compound C(C)N=C(C)C(CC)(O)C XFJXTZOILWNVKL-UHFFFAOYSA-N 0.000 description 1
- PXJCDOSDACXFTB-UHFFFAOYSA-N 2-methoxy-2,6,6-trimethylheptane-3,5-dione Chemical compound COC(C)(C)C(=O)CC(=O)C(C)(C)C PXJCDOSDACXFTB-UHFFFAOYSA-N 0.000 description 1
- PLHCSZRZWOWUBW-UHFFFAOYSA-N 2-methoxyethyl 3-oxobutanoate Chemical compound COCCOC(=O)CC(C)=O PLHCSZRZWOWUBW-UHFFFAOYSA-N 0.000 description 1
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 1
- 125000004200 2-methoxyethyl group Chemical group [H]C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 1
- IHGXRBJFCJZJSC-UHFFFAOYSA-N 2-methyl-1-propan-2-yloxypropan-2-ol Chemical compound CC(C)OCC(C)(C)O IHGXRBJFCJZJSC-UHFFFAOYSA-N 0.000 description 1
- JPYKRAVOZNWRKH-UHFFFAOYSA-N 2-methyldecane-4,6-dione Chemical compound CCCCC(=O)CC(=O)CC(C)C JPYKRAVOZNWRKH-UHFFFAOYSA-N 0.000 description 1
- VVALZQWOQKHDIM-UHFFFAOYSA-N 2-methylheptane-3,5-dione Chemical compound CCC(=O)CC(=O)C(C)C VVALZQWOQKHDIM-UHFFFAOYSA-N 0.000 description 1
- QUVMSYUGOKEMPX-UHFFFAOYSA-N 2-methylpropan-1-olate;titanium(4+) Chemical compound [Ti+4].CC(C)C[O-].CC(C)C[O-].CC(C)C[O-].CC(C)C[O-] QUVMSYUGOKEMPX-UHFFFAOYSA-N 0.000 description 1
- UFQBSPGKRRSATO-UHFFFAOYSA-N 3,3-dimethoxybutan-2-one Chemical compound COC(C)(OC)C(C)=O UFQBSPGKRRSATO-UHFFFAOYSA-N 0.000 description 1
- BYEAPGRMZGQWND-UHFFFAOYSA-N 3-(butan-2-yloxymethyl)pentan-3-ol Chemical compound CCC(C)OCC(O)(CC)CC BYEAPGRMZGQWND-UHFFFAOYSA-N 0.000 description 1
- YMGLTXUVOIJOGG-UHFFFAOYSA-N 3-(methylamino)heptan-4-ol Chemical compound CCCC(O)C(CC)NC YMGLTXUVOIJOGG-UHFFFAOYSA-N 0.000 description 1
- FNFKMJVRDHWAOR-UHFFFAOYSA-N 3-(propoxymethyl)pentan-3-ol Chemical compound CCCOCC(O)(CC)CC FNFKMJVRDHWAOR-UHFFFAOYSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- LHUPIZXVJQEKCY-UHFFFAOYSA-N 4-methoxy-2-methylbutan-2-ol Chemical compound COCCC(C)(C)O LHUPIZXVJQEKCY-UHFFFAOYSA-N 0.000 description 1
- SGGGJHMSAUIWJZ-UHFFFAOYSA-N 4-methyl-3-(methylamino)heptan-4-ol Chemical compound C(C)C(C(CCC)(O)C)NC SGGGJHMSAUIWJZ-UHFFFAOYSA-N 0.000 description 1
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 description 1
- QWJWPDHACGGABF-UHFFFAOYSA-N 5,5-dimethylcyclopenta-1,3-diene Chemical group CC1(C)C=CC=C1 QWJWPDHACGGABF-UHFFFAOYSA-N 0.000 description 1
- VMPZHUZUESBODJ-UHFFFAOYSA-N 5-methylheptane-2,4-dione Chemical compound CCC(C)C(=O)CC(C)=O VMPZHUZUESBODJ-UHFFFAOYSA-N 0.000 description 1
- KHZGUWAFFHXZLC-UHFFFAOYSA-N 5-methylhexane-2,4-dione Chemical compound CC(C)C(=O)CC(C)=O KHZGUWAFFHXZLC-UHFFFAOYSA-N 0.000 description 1
- IGMOYJSFRIASIE-UHFFFAOYSA-N 6-Methylheptan-2,4-dione Chemical compound CC(C)CC(=O)CC(C)=O IGMOYJSFRIASIE-UHFFFAOYSA-N 0.000 description 1
- GALSRMFPHSGNRR-UHFFFAOYSA-N 6-ethyl-2-methyldecane-3,5-dione Chemical compound CCCCC(CC)C(=O)CC(=O)C(C)C GALSRMFPHSGNRR-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- XPQCITLHEHJFAV-UHFFFAOYSA-N C(C(C)C)C1(C=CC=C1)[Ti](OC)(OC)OC Chemical compound C(C(C)C)C1(C=CC=C1)[Ti](OC)(OC)OC XPQCITLHEHJFAV-UHFFFAOYSA-N 0.000 description 1
- IPTGOPJXEXTNCE-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Ti](N(C)C)(N(C)C)N(C)C Chemical compound C(C)C1(C=CC=C1)[Ti](N(C)C)(N(C)C)N(C)C IPTGOPJXEXTNCE-UHFFFAOYSA-N 0.000 description 1
- ANWKVNXHQDRSQF-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Ti](N(CC)C)(N(CC)C)N(C)CC Chemical compound C(C)C1(C=CC=C1)[Ti](N(CC)C)(N(CC)C)N(C)CC ANWKVNXHQDRSQF-UHFFFAOYSA-N 0.000 description 1
- DTOHEKDIBNUSIP-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Ti](OC)(OC)OC Chemical compound C(C)C1(C=CC=C1)[Ti](OC)(OC)OC DTOHEKDIBNUSIP-UHFFFAOYSA-N 0.000 description 1
- HDGRKNWTTXGATK-UHFFFAOYSA-N C(CC)C1(C=CC=C1)[Ti](OC)(OC)OC Chemical compound C(CC)C1(C=CC=C1)[Ti](OC)(OC)OC HDGRKNWTTXGATK-UHFFFAOYSA-N 0.000 description 1
- XJSOMZOHHHAEHM-UHFFFAOYSA-N C(CCC)C1(C=CC=C1)[Ti](OC)(OC)OC Chemical compound C(CCC)C1(C=CC=C1)[Ti](OC)(OC)OC XJSOMZOHHHAEHM-UHFFFAOYSA-N 0.000 description 1
- ZYMRFAAFCPNQEF-UHFFFAOYSA-N C1(C=CC=C1)[Ti](N(CC)C)(N(CC)C)N(C)CC Chemical compound C1(C=CC=C1)[Ti](N(CC)C)(N(CC)C)N(C)CC ZYMRFAAFCPNQEF-UHFFFAOYSA-N 0.000 description 1
- RWXRWFPGHUQFHW-UHFFFAOYSA-N C1(C=CC=C1)[Ti](N(CC)CC)(N(CC)CC)N(CC)CC Chemical compound C1(C=CC=C1)[Ti](N(CC)CC)(N(CC)CC)N(CC)CC RWXRWFPGHUQFHW-UHFFFAOYSA-N 0.000 description 1
- 0 CC(C)(CN(C)C)O* Chemical compound CC(C)(CN(C)C)O* 0.000 description 1
- HXAAXAPDZBYKPT-UHFFFAOYSA-N CC1(C=CC=C1)[Ti](N(CC)CC)(N(CC)CC)N(CC)CC Chemical compound CC1(C=CC=C1)[Ti](N(CC)CC)(N(CC)CC)N(CC)CC HXAAXAPDZBYKPT-UHFFFAOYSA-N 0.000 description 1
- YQZCFUHFPMUPFE-UHFFFAOYSA-N CC1(C=CC=C1)[Ti](OC)(OC)OC Chemical compound CC1(C=CC=C1)[Ti](OC)(OC)OC YQZCFUHFPMUPFE-UHFFFAOYSA-N 0.000 description 1
- YMMQIRAORSQFSY-UHFFFAOYSA-N CCC(C)(C)[Ti](C(C)(C)CC)(C(C)(C)CC)C(C)(C)CC Chemical compound CCC(C)(C)[Ti](C(C)(C)CC)(C(C)(C)CC)C(C)(C)CC YMMQIRAORSQFSY-UHFFFAOYSA-N 0.000 description 1
- TXPAAJFKASNIGR-UHFFFAOYSA-N CN(C)[Ti](C1C=CC=C1)(N(C)C)N(C)C Chemical compound CN(C)[Ti](C1C=CC=C1)(N(C)C)N(C)C TXPAAJFKASNIGR-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 1
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- RFFFKMOABOFIDF-UHFFFAOYSA-N Pentanenitrile Chemical compound CCCCC#N RFFFKMOABOFIDF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- BTGRAWJCKBQKAO-UHFFFAOYSA-N adiponitrile Chemical compound N#CCCCCC#N BTGRAWJCKBQKAO-UHFFFAOYSA-N 0.000 description 1
- 239000003905 agrochemical Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 125000005233 alkylalcohol group Chemical group 0.000 description 1
- 125000005263 alkylenediamine group Chemical group 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- YLBGXUJFSMDKDD-UHFFFAOYSA-N benzene-1,4-dicarbonitrile;pyridine Chemical compound C1=CC=NC=C1.N#CC1=CC=C(C#N)C=C1 YLBGXUJFSMDKDD-UHFFFAOYSA-N 0.000 description 1
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 1
- LEQVBGOJANWCKL-UHFFFAOYSA-N bis(trimethylsilyl)azanide;cobalt(2+) Chemical compound [Co+2].C[Si](C)(C)[N-][Si](C)(C)C.C[Si](C)(C)[N-][Si](C)(C)C LEQVBGOJANWCKL-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 1
- KVNRLNFWIYMESJ-UHFFFAOYSA-N butyronitrile Chemical compound CCCC#N KVNRLNFWIYMESJ-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001869 cobalt compounds Chemical class 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 150000003983 crown ethers Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- MGWYSXZGBRHJNE-UHFFFAOYSA-N cyclohexane-1,4-dicarbonitrile Chemical compound N#CC1CCC(C#N)CC1 MGWYSXZGBRHJNE-UHFFFAOYSA-N 0.000 description 1
- VBWIZSYFQSOUFQ-UHFFFAOYSA-N cyclohexanecarbonitrile Chemical compound N#CC1CCCCC1 VBWIZSYFQSOUFQ-UHFFFAOYSA-N 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- 125000005265 dialkylamine group Chemical group 0.000 description 1
- UNTITLLXXOKDTB-UHFFFAOYSA-N dibenzo-24-crown-8 Chemical compound O1CCOCCOCCOC2=CC=CC=C2OCCOCCOCCOC2=CC=CC=C21 UNTITLLXXOKDTB-UHFFFAOYSA-N 0.000 description 1
- BBGKDYHZQOSNMU-UHFFFAOYSA-N dicyclohexano-18-crown-6 Chemical compound O1CCOCCOC2CCCCC2OCCOCCOC2CCCCC21 BBGKDYHZQOSNMU-UHFFFAOYSA-N 0.000 description 1
- QMLGNDFKJAFKGZ-UHFFFAOYSA-N dicyclohexano-24-crown-8 Chemical compound O1CCOCCOCCOC2CCCCC2OCCOCCOCCOC2CCCCC21 QMLGNDFKJAFKGZ-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- NNUZNYLOAGGAIU-UHFFFAOYSA-N diethylazanide titanium(3+) Chemical compound CCN(CC)[Ti](N(CC)CC)N(CC)CC NNUZNYLOAGGAIU-UHFFFAOYSA-N 0.000 description 1
- 229940043279 diisopropylamine Drugs 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- CRGGFGFWZPSXPP-UHFFFAOYSA-N dimethylazanide;titanium(3+) Chemical compound [Ti+3].C[N-]C.C[N-]C.C[N-]C CRGGFGFWZPSXPP-UHFFFAOYSA-N 0.000 description 1
- HPYNZHMRTTWQTB-UHFFFAOYSA-N dimethylpyridine Natural products CC1=CC=CN=C1C HPYNZHMRTTWQTB-UHFFFAOYSA-N 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- ZTOMUSMDRMJOTH-UHFFFAOYSA-N glutaronitrile Chemical compound N#CCCCC#N ZTOMUSMDRMJOTH-UHFFFAOYSA-N 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 1
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 1
- DGCTVLNZTFDPDJ-UHFFFAOYSA-N heptane-3,5-dione Chemical compound CCC(=O)CC(=O)CC DGCTVLNZTFDPDJ-UHFFFAOYSA-N 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical compound FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229940035429 isobutyl alcohol Drugs 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 150000002737 metalloid compounds Chemical class 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- NFWSQSCIDYBUOU-UHFFFAOYSA-N methylcyclopentadiene Chemical compound CC1=CC=CC1 NFWSQSCIDYBUOU-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- DWFKOMDBEKIATP-UHFFFAOYSA-N n'-[2-[2-(dimethylamino)ethyl-methylamino]ethyl]-n,n,n'-trimethylethane-1,2-diamine Chemical compound CN(C)CCN(C)CCN(C)CCN(C)C DWFKOMDBEKIATP-UHFFFAOYSA-N 0.000 description 1
- LSHROXHEILXKHM-UHFFFAOYSA-N n'-[2-[2-[2-(2-aminoethylamino)ethylamino]ethylamino]ethyl]ethane-1,2-diamine Chemical compound NCCNCCNCCNCCNCCN LSHROXHEILXKHM-UHFFFAOYSA-N 0.000 description 1
- GVWISOJSERXQBM-UHFFFAOYSA-N n-methylpropan-1-amine Chemical compound CCCNC GVWISOJSERXQBM-UHFFFAOYSA-N 0.000 description 1
- XHFGWHUWQXTGAT-UHFFFAOYSA-N n-methylpropan-2-amine Chemical compound CNC(C)C XHFGWHUWQXTGAT-UHFFFAOYSA-N 0.000 description 1
- 150000002816 nickel compounds Chemical class 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical compound CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- GJYXGIIWJFZCLN-UHFFFAOYSA-N octane-2,4-dione Chemical compound CCCCC(=O)CC(C)=O GJYXGIIWJFZCLN-UHFFFAOYSA-N 0.000 description 1
- BTNXBLUGMAMSSH-UHFFFAOYSA-N octanedinitrile Chemical compound N#CCCCCCCC#N BTNXBLUGMAMSSH-UHFFFAOYSA-N 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- OOFGXDQWDNJDIS-UHFFFAOYSA-N oxathiolane Chemical compound C1COSC1 OOFGXDQWDNJDIS-UHFFFAOYSA-N 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 description 1
- AQIXEPGDORPWBJ-UHFFFAOYSA-N pentan-3-ol Chemical compound CCC(O)CC AQIXEPGDORPWBJ-UHFFFAOYSA-N 0.000 description 1
- 125000005005 perfluorohexyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- BHRZNVHARXXAHW-UHFFFAOYSA-N sec-butylamine Chemical compound CCC(C)N BHRZNVHARXXAHW-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
- C07F15/065—Cobalt compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
- C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
- C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
- C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
- C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
- C07C251/06—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton
- C07C251/08—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton being acyclic
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/04—Nickel compounds
- C07F15/045—Nickel compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/406—Oxides of iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/408—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/28—Titanium compounds
Definitions
- the present invention relates to a novel metal alkoxide compound having a specific imino alcohol as a ligand, a raw material for forming a thin film containing the compound, a method for producing a metal-containing thin film using the raw material for forming a thin film, and a novel alcohol Relates to compounds.
- Thin film materials containing metal elements are applied to various applications because they exhibit electrical characteristics and optical characteristics.
- copper and copper-containing thin films are applied as LSI wiring materials because of their high conductivity, high electromigration resistance, and high melting point.
- Nickel and nickel-containing thin films are mainly used for members of electronic parts such as resistance films and barrier films, members for recording media such as magnetic films, and members for thin film solar cells such as electrodes.
- Cobalt and cobalt-containing thin films are used for electrode films, resistance films, adhesive films, magnetic tapes, carbide tool members, and the like.
- Examples of the method for producing the thin film include a sputtering method, an ion plating method, a MOD method such as a coating pyrolysis method and a sol-gel method, a chemical vapor deposition method, etc., but has excellent composition controllability and step coverage. Since it has many advantages such as being suitable for mass production and capable of hybrid integration, a chemical vapor deposition (hereinafter sometimes simply referred to as CVD) method including an ALD (Atomic Layer Deposition) method. Is the optimal manufacturing process.
- CVD chemical vapor deposition
- ALD Atomic Layer Deposition
- Patent Document 1 discloses a third grade of nickel that can be used as a raw material for forming a nickel-containing thin film by MOCVD.
- Amino alkoxide compounds are disclosed.
- Patent Document 2 discloses a tertiary aminoalkoxide compound of cobalt that can be used as a raw material for forming a cobalt-containing thin film by MOCVD.
- Patent Document 3 discloses a tertiary amino alkoxide compound of copper that can be used as a raw material for forming a copper-containing thin film by chemical vapor deposition.
- an object of the present invention is to provide a metal alkoxide compound having physical properties suitable as a raw material for forming a thin film by CVD, and in particular, to provide a metal alkoxide compound having physical properties suitable as a raw material for forming a metal copper thin film. There is to do.
- the present invention provides a metal alkoxide compound represented by the following general formula (I), a raw material for forming a thin film containing the compound, and a method for producing a thin film using the raw material to form a thin film containing a metal. Is.
- R 1 represents a methyl group or an ethyl group
- R 2 represents a hydrogen atom or a methyl group
- R 3 represents a linear or branched alkyl group having 1 to 3 carbon atoms
- M represents a metal atom.
- n represents a valence of a metal atom or a silicon atom.
- the present invention also provides an alcohol compound represented by the following general formula (II), which is suitable as a ligand for the metal alkoxide compound.
- R 4 represents a methyl group or an ethyl group
- R 5 represents a hydrogen atom or a methyl group
- R 6 represents a linear or branched alkyl group having 1 to 3 carbon atoms
- R 5 represents a methyl group
- R 4 represents When it is a methyl group
- R 6 represents a linear or branched alkyl group having 3 carbon atoms
- R 5 is a methyl group and R 4 is an ethyl group
- R 6 has 1 to 3 represents a linear or branched alkyl group.
- the present invention it is possible to provide a novel metal alkoxide compound that is not pyrophoric, exhibits sufficient volatility, and has high thermal stability.
- the metal alkoxide compound is suitable as a raw material for forming a thin film by a CVD method.
- a copper compound that is not pyrophoric can be thermally decomposed at less than 200 ° C., and exhibits sufficient volatility.
- the copper compound is suitable as a raw material for forming a thin film for forming a metallic copper thin film by a CVD method.
- the novel alcohol compound suitable as a raw material of the said metal alkoxide compound of this invention can be provided.
- FIG. 1 is a schematic view showing an example of an apparatus for chemical vapor deposition used in the method for producing a thin film containing a metal according to the present invention.
- FIG. 2 is a schematic diagram showing another example of an apparatus for chemical vapor deposition used in the method for producing a metal-containing thin film according to the present invention.
- FIG. 3 is a schematic view showing another example of an apparatus for chemical vapor deposition used in the method for producing a metal-containing thin film according to the present invention.
- FIG. 4 is a schematic view showing another example of a chemical vapor deposition apparatus used in the method for producing a metal-containing thin film according to the present invention.
- FIG. 5 shows the compound No. obtained by single crystal X-ray structural analysis.
- Fig. 25 is a molecular structure diagram of 25.
- FIG. 6 shows the compound No. obtained by single crystal X-ray structural analysis.
- 41 is a molecular structure diagram of 41.
- FIG. FIG. 7 shows the compound No. obtained by single crystal X-ray structural analysis.
- 47 is a molecular structure diagram of 47.
- FIG. 8 shows the compound No. obtained by single crystal X-ray structural analysis.
- 57 is a molecular structure diagram of 57.
- FIG. 9 shows the compound No. obtained by single crystal X-ray structural analysis.
- 63 is a molecular structure diagram of 63.
- FIG. FIG. 10 shows the compound No. obtained by single crystal X-ray structural analysis.
- FIG. 17 is a molecular structure diagram of 17.
- 11 shows the compound No. obtained by single crystal X-ray structural analysis.
- FIG. 18 is a molecular structure diagram of 18;
- FIG. 12 shows the compound No. obtained by single crystal X-ray structural analysis. It is a 19 molecular structure diagram.
- FIG. 13 shows the compound No. obtained by single crystal X-ray structural analysis. It is a molecular structure diagram of 20.
- 14 shows the compound No. obtained by single crystal X-ray structural analysis.
- FIG. 15 shows compound Nos. Obtained by single crystal X-ray structural analysis. It is a molecular structure diagram of 60.
- the metal alkoxide compound of the present invention is represented by the above general formula (I), is suitable as a precursor for a thin film production method having a vaporization step such as a CVD method, and has high thermal stability. In particular, it is suitable as a precursor used in the ALD method.
- R 1 represents a methyl group or an ethyl group
- R 2 represents a hydrogen atom or a methyl group
- R 3 represents a linear or branched alkyl group having 1 to 3 carbon atoms
- M represents a metal atom or a silicon atom
- n represents a valence of the metal atom or the silicon atom.
- Examples of the linear or branched alkyl group having 1 to 3 carbon atoms represented by R 3 include a methyl group, an ethyl group, a propyl group, and an isopropyl group.
- the metal alkoxide compound represented by the general formula (I) may have optical activity
- the metal alkoxide compound of the present invention is not particularly distinguished by the R-form and the S-form, either of which may be used.
- a mixture of the body and the S body in an arbitrary ratio may be used.
- the racemate is inexpensive to manufacture.
- R 1 , R 2 , and R 3 have a high vapor pressure and a high thermal decomposition temperature when used in a method for producing a thin film other than metallic copper having a step of vaporizing a compound. Is preferred. Specifically, when M is a metal atom or silicon atom other than copper, R 1 is preferably a methyl group or an ethyl group, R 2 is preferably a hydrogen atom or a methyl group, and R 3 is a methyl group, an ethyl group or An isopropyl group is preferred.
- R 1 is preferably a methyl group or an ethyl group
- R 2 is preferably a methyl group
- R 3 is preferably a methyl group, an ethyl group, or an isopropyl group.
- R 1 , R 2 , and R 3 can be arbitrarily selected depending on the solubility in the solvent used, the thin film formation reaction, and the like.
- R 1 , R 2 , and R 3 have a high vapor pressure and a thermal decomposition temperature of 200 ° C. when used in a method for producing a metallic copper thin film having a step of vaporizing a compound. Those less than are preferred.
- M is copper
- R 1 is preferably a methyl group or an ethyl group
- R 2 is preferably a hydrogen atom
- R 3 is preferably a methyl group, an ethyl group or an isopropyl group.
- a compound in which R 1 is an ethyl group is particularly preferable because of its low thermal decomposition temperature.
- R 1 , R 2 , and R 3 can be arbitrarily selected depending on the solubility in the solvent used, the thin film formation reaction, and the like.
- M represents a metal atom or a silicon atom.
- the metal atom is not particularly limited.
- the metal alkoxide compound of the present invention is represented by the above general formula (I).
- the terminal donor group in the ligand is coordinated to a metal atom to form a ring structure, It is not distinguished from the case represented by the formula (IA), and is a concept including both.
- R 1 represents a methyl group or an ethyl group
- R 2 represents a hydrogen atom or a methyl group
- R 3 represents a linear or branched alkyl group having 1 to 3 carbon atoms
- M represents a metal atom.
- n represents the valence of the metal atom.
- metal alkoxide compound represented by the general formula (I) examples include compound No. 1 to Compound No. 16 is mentioned.
- Compound No. 1 to Compound No. In M M represents a metal atom or a silicon atom
- n represents a valence of the metal atom or the silicon atom.
- the metal alkoxide compound of the present invention is not particularly limited by the production method, and is produced by applying a known reaction. As a manufacturing method, it can obtain by making the alcohol compound of a corresponding structure react, for example with a metal alkoxide compound, a chloride, an amine compound, etc.
- the thin film forming raw material of the present invention is a thin film precursor made of the metal alkoxide compound of the present invention described above, and the form thereof varies depending on the manufacturing process to which the thin film forming raw material is applied.
- the raw material for forming a thin film of the present invention does not contain a metal compound and a semi-metal compound other than the metal alkoxide compound.
- the raw material for forming a thin film of the present invention contains a compound and / or metalloid containing a desired metal in addition to the metal alkoxide compound.
- the thin film forming raw material of the present invention may further contain an organic solvent and / or a nucleophilic reagent.
- the raw material for forming a thin film of the present invention is suitable for chemical vapor deposition (hereinafter, referred to as CVD raw material) because the physical properties of the precursor metal alkoxide compound are suitable for the CVD method and ALD method. ) Is useful.
- the raw material for forming a thin film of the present invention is a raw material for chemical vapor deposition
- the form is appropriately selected depending on the method such as the transport and supply method of the CVD method used.
- the raw material for CVD is vaporized by heating and / or decompressing in a container in which the raw material is stored (hereinafter sometimes simply referred to as a raw material container), and is necessary.
- Gas transport method, CVD which introduces the vapor into a film forming chamber (hereinafter sometimes referred to as a deposition reaction part) where a substrate is installed, together with a carrier gas such as argon, nitrogen, helium, etc.
- a carrier gas such as argon, nitrogen, helium, etc.
- the metal alkoxide compound itself represented by the above general formula (I) can be used as a CVD raw material.
- the metal alkoxide compound represented by the above general formula (I) itself or a solution obtained by dissolving the compound in an organic solvent can be used as a raw material for CVD.
- These CVD raw materials may further contain other precursors, nucleophilic reagents and the like.
- the CVD raw material is vaporized and supplied independently for each component (hereinafter sometimes referred to as a single source method), and the multi-component raw material is mixed in advance with a desired composition.
- a method of vaporizing and supplying a mixed raw material hereinafter, sometimes referred to as a cocktail sauce method.
- a cocktail sauce method a mixture of the metal alkoxide compound of the present invention and another precursor or a mixed solution obtained by dissolving the mixture in an organic solvent can be used as a raw material for CVD.
- This mixture or mixed solution may further contain a nucleophilic reagent and the like.
- the CVD raw material including the R body and the CVD raw material including the S body may be vaporized separately.
- a CVD raw material containing a mixture of R body and S body may be vaporized.
- the organic solvent is not particularly limited and a well-known general organic solvent can be used.
- the organic solvent include acetates such as ethyl acetate, butyl acetate and methoxyethyl acetate; ethers such as tetrahydrofuran, tetrahydropyran, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, dibutyl ether and dioxane; Ketones such as butyl ketone, methyl isobutyl ketone, ethyl butyl ketone, dipropyl ketone, diisobutyl ketone, methyl amyl ketone, cyclohexanone, methylcyclohexanone; hexane, cyclohexane, methylcyclohexane, dimethylcyclohexane, ethylcyclohexane, heptane, oc
- the total amount of the precursor in the CVD raw material which is a solution obtained by dissolving the precursor in the organic solvent, is 0.01 to 2.0 mol / liter, particularly 0.05 to 1.0 mol / liter. It is preferable to make it liter.
- the amount of the entire precursor is the amount of the metal alkoxide compound of the present invention when the thin film forming raw material of the present invention does not contain a metal compound and a metalloid compound other than the metal alkoxide compound of the present invention.
- the raw material for forming a thin film contains a compound containing another metal and / or a compound containing a metalloid in addition to the metal alkoxide compound, the total amount of the metal alkoxide compound and the other precursor of the present invention.
- the other precursor used together with the metal alkoxide compound of the present invention is not particularly limited, and a well-known general precursor used as a raw material for CVD can be used. .
- Examples of the other precursor include one or more selected from the group consisting of compounds used as organic ligands such as alcohol compounds, glycol compounds, ⁇ -diketone compounds, cyclopentadiene compounds, and organic amine compounds.
- a compound with silicon or a metal is mentioned.
- the precursor metal species include lithium, sodium, potassium, magnesium, calcium, strontium, barium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, iron, ruthenium, cobalt, rhodium.
- Examples of the alcohol compound used as the organic ligand of the other precursor include methanol, ethanol, propanol, isopropyl alcohol, butanol, secondary butyl alcohol, isobutyl alcohol, tertiary butyl alcohol, pentyl alcohol, isopentyl alcohol, Alkyl alcohols such as 3-pentyl alcohol; 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, 2- (2-methoxyethoxy) ethanol, 2-methoxy-1-methylethanol, 2-methoxy-1,1 -Dimethylethanol, 2-ethoxy-1,1-dimethylethanol, 2-isopropoxy-1,1-dimethylethanol, 2-butoxy-1,1-dimethylethanol, 2- (2-methoxyethoxy) -1,1 Ether alcohols such as dimethylethanol, 2-propoxy-1,1-diethylethanol, 2-s-butoxy-1,1-diethylethanol, 3-methoxy-1,1-dimethylpropanol; dimethyla
- glycol compound used as the organic ligand of the other precursor examples include 1,2-ethanediol, 1,2-propanediol, 1,3-propanediol, 2,4-hexanediol, 2,2- Dimethyl-1,3-propanediol, 2,2-diethyl-1,3-propanediol, 1,3-butanediol, 2,4-butanediol, 2,2-diethyl-1,3-butanediol, 2 -Ethyl-2-butyl-1,3-propanediol, 2,4-pentanediol, 2-methyl-1,3-propanediol, 2-methyl-2,4-pentanediol, 2,4-hexanediol, Examples include 2,4-dimethyl-2,4-pentanediol.
- ⁇ -diketone compounds include acetylacetone, hexane-2,4-dione, 5-methylhexane-2,4-dione, heptane-2,4-dione, 2-methylheptane-3,5-dione, 5 -Methylheptane-2,4-dione, 6-methylheptane-2,4-dione, 2,2-dimethylheptane-3,5-dione, 2,6-dimethylheptane-3,5-dione, 2,2 , 6-trimethylheptane-3,5-dione, 2,2,6,6-tetramethylheptane-3,5-dione, octane-2,4-dione, 2,2,6-trimethyloctane-3,5 -Dione, 2,6-dimethyloctane-3,5-dione, 2,9-dimethylnonane-4,6-dione, 2-methyl-6-e
- Cyclopentadiene compounds include cyclopentadiene, methylcyclopentadiene, ethylcyclopentadiene, propylcyclopentadiene, isopropylcyclopentadiene, butylcyclopentadiene, secondary butylcyclopentadiene, isobutylcyclopentadiene, tertiary butylcyclopentadiene, dimethylcyclopentadiene.
- organic amine compounds used as the above-mentioned organic ligands include methylamine, ethylamine, propylamine, isopropylamine, butylamine, secondary butylamine, tertiary butylamine, isobutylamine, and dimethyl. Amine, diethylamine, dipropylamine, diisopropylamine, ethylmethylamine, propylmethylamine, Isopropyl methyl amine and the like.
- precursors described above are known in the art, and their manufacturing methods are also known.
- the inorganic salt of metal or its hydrate described above is reacted with the alkali metal alkoxide of the alcohol compound.
- a precursor can be manufactured.
- the metal inorganic salt or hydrate include metal halides and nitrates
- examples of the alkali metal alkoxide include sodium alkoxide, lithium alkoxide, and potassium alkoxide.
- the other precursor described above is preferably a compound that is similar in thermal and / or oxidative decomposition behavior to the metal alkoxide compound of the present invention, and in the case of the cocktail source method, heat and / or In addition to the similar behavior of oxidative decomposition, those that do not cause alteration due to chemical reaction or the like during mixing are preferred.
- examples of the precursor containing titanium, zirconium or hafnium include compounds represented by the following general formulas (II-1) to (II-5).
- M 1 represents titanium, zirconium or hafnium, and R a and R b each independently may be substituted with a halogen atom, and may have an oxygen atom in the chain.
- R c represents an alkyl group having 1 to 8 carbon atoms
- R d represents an alkylene group having 2 to 18 carbon atoms which may be branched
- R e and R f each independently represents a hydrogen atom.
- each of R g , R h , R k and R j independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and p represents an integer of 0 to 4 Q represents 0 or 2, r represents an integer of 0 to 3, s represents an integer of 0 to 4, and t represents an integer of 1 to 4.
- an alkyl having 1 to 20 carbon atoms which may be substituted with a halogen atom and may contain an oxygen atom in the chain represented by R a and R b
- the groups are methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, sec-butyl, isobutyl, amyl, isoamyl, sec-amyl, tertiary amyl, hexyl, cyclohexyl, 1-methylcyclohexyl, heptyl, 3-heptyl , Isoheptyl, tertiary heptyl, n-octyl, isooctyl, tertiary octyl, 2-ethylhexyl, trifluoromethyl, perfluorohexyl, 2-methoxyethyl, 2-ethoxyethy
- alkyl group having 1 to 8 carbon atoms represented by R c examples include methyl, ethyl, propyl, isopropyl, butyl, secondary butyl, tertiary butyl, isobutyl, amyl, isoamyl, secondary amyl, tertiary amyl. Hexyl, 1-ethylpentyl, cyclohexyl, 1-methylcyclohexyl, heptyl, isoheptyl, tertiary heptyl, n-octyl, isooctyl, tertiary octyl, 2-ethylhexyl and the like.
- the alkylene group having 2 to 18 carbon atoms which may be branched and represented by R d is a group given by glycol, and examples of the glycol include 1,2-ethanediol, 1,2- Propanediol, 1,3-propanediol, 1,3-butanediol, 2,4-hexanediol, 2,2-dimethyl-1,3-propanediol, 2,2-diethyl-1,3-propanediol, 2,2-diethyl-1,3-butanediol, 2-ethyl-2-butyl-1,3-propanediol, 2,4-pentanediol, 2-methyl-1,3-propanediol, 1-methyl- 2,4-pentanediol and the like can be mentioned.
- Examples of the alkyl group having 1 to 3 carbon atoms represented by R e and R f include methyl, ethyl, propyl, 2-propyl and the like, represented by R g , R h , R j and R k.
- Examples of the alkyl group having 1 to 4 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, secondary butyl, tertiary butyl, and isobutyl.
- Examples of the precursor containing rare earth elements include compounds represented by the following formulas (III-1) to (III-3).
- R a and R b each independently represents an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom and may contain an oxygen atom in the chain
- R c represents an alkyl group having 1 to 8 carbon atoms
- R e and R f each independently represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms
- R g and R j each independently represent (It represents an alkyl group having 1 to 4 carbon atoms, p ′ represents an integer of 0 to 3, and r ′ represents an integer of 0 to 2.
- the rare earth atom represented by M 2 includes scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, Examples thereof include ytterbium and lutetium, and examples of the group represented by R a , R b , R c , R e , R f , R g, and R j include the groups exemplified for the aforementioned titanium precursor.
- the raw material for forming a thin film of the present invention may contain a nucleophilic reagent as needed to impart the stability of the metal alkoxide compound of the present invention and other precursors.
- a nucleophilic reagent include ethylene glycol ethers such as glyme, diglyme, triglyme and tetraglyme, 18-crown-6, dicyclohexyl-18-crown-6, 24-crown-8, dicyclohexyl-24-crown-8.
- Crown ethers such as dibenzo-24-crown-8, ethylenediamine, N, N′-tetramethylethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, 1,1,4,7,7- Polyamines such as pentamethyldiethylenetriamine, 1,1,4,7,10,10-hexamethyltriethylenetetramine and triethoxytriethyleneamine, cyclic polyamines such as cyclam and cyclen, pyridine, pyrrolidine and piperi Heterocyclic compounds such as gin, morpholine, N-methylpyrrolidine, N-methylpiperidine, N-methylmorpholine, tetrahydrofuran, tetrahydropyran, 1,4-dioxane, oxazole, thiazole, oxathiolane, methyl acetoacetate, ethyl acetoacetate, ⁇ -ketoesters such
- the raw material for forming a thin film according to the present invention should contain as little impurities metal elements as possible, impurities halogen such as impurity chlorine, and impurities organic components as much as possible.
- the impurity metal element content is preferably 100 ppb or less for each element, more preferably 10 ppb or less, and the total amount is preferably 1 ppm or less, more preferably 100 ppb or less.
- the content of alkali metal elements, alkaline earth metal elements, and related elements that affect the electrical characteristics of the resulting thin film should be reduced. is required.
- the impurity halogen content is preferably 100 ppm or less, more preferably 10 ppm or less, and still more preferably 1 ppm or less.
- the total amount of impurity organic components is preferably 500 ppm or less, more preferably 50 ppm or less, and still more preferably 10 ppm or less.
- each metal compound, organic solvent, and nucleophilic reagent is reduced in moisture. Therefore, it is better to remove moisture as much as possible before use.
- the water content of each of the metal compound, organic solvent and nucleophilic reagent is preferably 10 ppm or less, and more preferably 1 ppm or less.
- the raw material for forming a thin film of the present invention contains as few particles as possible in order to reduce or prevent particle contamination of the formed thin film.
- the number of particles larger than 0.3 ⁇ m is preferably 100 or less in 1 ml of the liquid phase, and larger than 0.2 ⁇ m.
- the number of particles is more preferably 1000 or less in 1 ml of the liquid phase, and the number of particles larger than 0.2 ⁇ m is further preferably 100 or less in 1 ml of the liquid phase.
- the thin film production method of the present invention for producing a thin film using the raw material for forming a thin film of the present invention includes a substrate containing vapor obtained by vaporizing the raw material for thin film formation of the present invention, and a reactive gas used as necessary. It is introduced by a CVD method in which a thin film containing a metal is grown and deposited on the surface of the substrate by introducing the film into an installed film formation chamber and then decomposing and / or chemically reacting the precursor on the substrate.
- CVD method in which a thin film containing a metal is grown and deposited on the surface of the substrate by introducing the film into an installed film formation chamber and then decomposing and / or chemically reacting the precursor on the substrate.
- Examples of the reactive gas used as necessary include oxygen, ozone, nitrogen dioxide, nitric oxide, water vapor, hydrogen peroxide, formic acid, acetic acid, acetic anhydride, etc.
- Examples of reducing substances include hydrogen, and examples of nitrides that can be used include organic amine compounds such as monoalkylamines, dialkylamines, trialkylamines, and alkylenediamines, hydrazine, and ammonia. Can be used alone or in combination of two or more.
- examples of the transport and supply method include the gas transport method, the liquid transport method, the single source method, and the cocktail sauce method described above.
- the above deposition methods include thermal CVD in which a raw material gas or a raw material gas and a reactive gas are reacted only by heat to deposit a thin film, plasma CVD using heat and plasma, photo CVD using heat and light, heat In addition, optical plasma CVD using light and plasma, and ALD in which the deposition reaction of CVD is divided into elementary processes and deposition is performed stepwise at the molecular level.
- Examples of the material of the substrate include silicon; ceramics such as silicon nitride, titanium nitride, tantalum nitride, titanium oxide, titanium nitride, ruthenium oxide, zirconium oxide, hafnium oxide, and lanthanum oxide; glass; metals such as metal ruthenium.
- Examples of the shape of the substrate include a plate shape, a spherical shape, a fiber shape, and a scale shape, and the surface of the substrate may be a flat surface or a three-dimensional structure such as a trench structure.
- reaction temperature base
- reaction pressure a deposition rate, etc.
- the reaction temperature is preferably 100 ° C. or more, more preferably 150 ° C. to 400 ° C., which is the temperature at which the metal alkoxide compound of the present invention sufficiently reacts.
- the reaction pressure is preferably from atmospheric pressure to 10 Pa in the case of thermal CVD and photo CVD, and is preferably 2000 Pa to 10 Pa in the case of using plasma.
- the deposition rate can be controlled by the raw material supply conditions (vaporization temperature, vaporization pressure), reaction temperature, and reaction pressure. When the deposition rate is large, the properties of the obtained thin film may be deteriorated. When the deposition rate is small, productivity may be problematic. Therefore, 0.01 to 100 nm / min is preferable, and 1 to 50 nm / min is more preferable. In the case of the ALD method, the number of cycles is controlled so as to obtain a desired film thickness.
- the above production conditions include temperature and pressure at which the thin film forming raw material is vaporized into steam.
- the step of vaporizing the raw material for forming a thin film to form a vapor may be performed in a raw material container or in a vaporization chamber.
- the thin film forming raw material of the present invention is preferably evaporated at 0 to 150 ° C.
- the pressure in the raw material container and the pressure in the vaporizing chamber are both preferably 1 to 10,000 Pa.
- the thin film manufacturing method of the present invention adopts the ALD method, vaporizes the raw material for forming the thin film into the vapor by the above-described transport and supply method, and introduces the vapor into the film forming chamber.
- a precursor thin film forming step for forming a precursor thin film on the surface of the substrate by the metal alkoxide compound in the vapor, an exhausting step for exhausting an unreacted metal alkoxide compound gas, and the precursor thin film is reactive. You may have the metal containing thin film formation process of making it react chemically with gas and forming the thin film containing the said metal on the surface of this base
- the metal oxide thin film is formed by the ALD method
- the raw material introduction step described above is performed.
- Preferred temperatures and pressures when the thin film forming raw material is steam are the same as those described above.
- a precursor thin film is formed on the substrate surface by the metal alkoxide compound introduced into the deposition reaction part (precursor thin film forming step). At this time, heat may be applied by heating the substrate or heating the deposition reaction part.
- the precursor thin film formed in this step is a metal oxide thin film or a thin film formed by decomposition and / or reaction of a part of the metal alkoxide compound, and has a composition different from that of the target metal oxide thin film.
- the substrate temperature when this step is performed is preferably from room temperature to 500 ° C, more preferably from 150 to 350 ° C.
- the pressure of the system (in the film forming chamber) when this step is performed is preferably 1 to 10,000 Pa, and more preferably 10 to 1000 Pa.
- unreacted metal alkoxide compound gas and by-product gas are exhausted from the deposition reaction part (exhaust process).
- the unreacted metal alkoxide compound gas or by-produced gas is completely exhausted from the deposition reaction part, but it is not necessarily exhausted completely.
- the exhaust method include a method of purging the system with an inert gas such as nitrogen, helium, and argon, a method of exhausting the system by depressurizing the system, a method combining these, and the like.
- the degree of pressure reduction is preferably 0.01 to 300 Pa, more preferably 0.01 to 100 Pa.
- an oxidizing gas is introduced into the deposition reaction portion, and a metal oxide thin film is formed from the precursor thin film obtained in the precursor thin film forming step by the action of the oxidizing gas or the oxidizing gas and heat.
- the temperature when heat is applied in this step is preferably room temperature to 500 ° C., more preferably 150 to 350 ° C.
- the pressure of the system (in the film forming chamber) when this step is performed is preferably 1 to 10,000 Pa, and more preferably 10 to 1000 Pa.
- the metal alkoxide compound of the present invention has good reactivity with an oxidizing gas, and a metal oxide thin film can be obtained.
- the method for producing a thin film of the present invention when the ALD method is employed as described above, a series of operations including the above-described raw material introduction step, precursor thin film formation step, exhaust step, and metal oxide-containing thin film formation step
- the thin film deposition according to 1 may be set as one cycle, and this cycle may be repeated a plurality of times until a thin film having a required film thickness is obtained.
- the next cycle is preferably performed after one cycle.
- the metal oxide thin film by the ALD method energy such as plasma, light or voltage may be applied, or a catalyst may be used.
- the timing for applying the energy and the timing for using the catalyst are not particularly limited.
- the metal alkoxide compound gas is introduced in the raw material introduction step, the precursor thin film formation step or the metal oxide-containing thin film formation step is heated.
- the exhaust process the system may be exhausted, the oxidizing gas may be introduced in the metal oxide-containing thin film forming process, or between the above processes.
- annealing may be performed in an inert atmosphere, an oxidizing atmosphere, or a reducing atmosphere in order to obtain better electrical characteristics.
- a reflow process may be provided.
- the temperature in this case is 200 to 1000 ° C., preferably 250 to 500 ° C.
- a known chemical vapor deposition apparatus can be used as the apparatus for producing a thin film using the thin film forming raw material of the present invention.
- the apparatus include an apparatus capable of supplying a precursor as shown in FIG. 1 and an apparatus having a vaporization chamber as shown in FIG.
- an apparatus capable of performing plasma treatment on a reactive gas can be used.
- the present invention is not limited to the single wafer type apparatus as shown in FIGS. 1, 2, 3, and 4, and an apparatus capable of simultaneously processing a large number of sheets using a batch furnace can also be used.
- a thin film manufactured using the raw material for forming a thin film of the present invention can be selected from other precursors, reactive gases, and manufacturing conditions as appropriate, so that a desired type of metal, oxide ceramics, nitride ceramics, glass, etc. It can be a thin film.
- the thin film is known to exhibit electrical characteristics, optical characteristics, and the like, and is applied to various applications.
- copper and copper-containing thin films are applied as LSI wiring materials because of their high conductivity, high electromigration resistance, and high melting point.
- Nickel and nickel-containing thin films are mainly used for members of electronic parts such as resistance films and barrier films, members for recording media such as magnetic films, and members for thin film solar cells such as electrodes.
- Cobalt and cobalt-containing thin films are used for electrode films, resistance films, adhesive films, magnetic tapes, carbide tool members, and the like.
- the alcohol compound of the present invention is represented by the above general formula (II) and is a particularly suitable compound as a ligand of a compound suitable as a precursor for a thin film production method having a vaporization step such as a CVD method.
- R 4 represents a methyl group or an ethyl group
- R 5 represents a hydrogen atom or a methyl group
- R 6 represents a linear or branched alkyl group having 1 to 3 carbon atoms.
- Examples of the linear or branched alkyl group having 1 to 3 carbon atoms represented by R 6 include a methyl group, an ethyl group, a propyl group, and an isopropyl group.
- R 5 is a hydrogen atom
- R 4 represents a methyl group or an ethyl group
- R 6 represents a linear or branched alkyl group having 1 to 3 carbon atoms.
- R 6 represents a linear or branched alkyl group having 3 carbon atoms.
- R 6 represents a linear or branched alkyl group having 1 to 3 carbon atoms.
- the alcohol compound of the present invention may have an optical isomer, but is not distinguished by the optical isomerism.
- alcohol compound of the present invention include the following compound No. 65-78.
- the alcohol compound of the present invention is not particularly limited by its production method.
- an alkylene oxide compound, water and an alkylamine compound are reacted under appropriate conditions, extracted with an appropriate solvent, and dehydrated. Can be obtained at
- the alcohol compound of the present invention can be used as a ligand of a metal compound used as a raw material for forming a thin film.
- a metal compound used as a raw material for forming a thin film used as a raw material for forming a metal copper thin film.
- R 5 in the general formula (II) is hydrogen is used as a raw material for forming a metal copper thin film.
- the alcohol compound of the present invention can also be used for applications such as solvents, fragrances, agricultural chemicals, pharmaceuticals, synthetic raw materials such as various polymers.
- Examples 1 to 7 are production examples of the alcohol compound of the present invention used as a raw material of the metal alkoxide compound of the present invention
- Production Example 1 is a production example of the alcohol compound used as a raw material of the metal alkoxide compound of the present invention
- Examples 8 to 18 are production examples of the metal alkoxide compound of the present invention
- Examples 19 and 20 are production examples of a metal copper or copper oxide thin film using the metal alkoxide compound (copper compound) of the present invention
- Comparative Example 1 is a metal using a comparative metal alkoxide compound (copper compound). It is a manufacture example of a copper thin film.
- Evaluation Example 1 the physical properties (thermal stability) of the metal alkoxide compounds of the present invention produced in Examples 8 to 12 and comparative compounds having similar structures were evaluated.
- Evaluation Example 2 the physical properties (thermal stability) of the metal alkoxide compounds (copper compounds) of the present invention produced in Examples 13 to 15 and 17 and comparative compounds similar in structure were evaluated.
- Evaluation Example 3 the physical properties of the copper metal thin film produced in Example 20 and Comparative Example 1 were evaluated.
- Example 1 Production of alcohol compound of the present invention (Compound No. 65) 100 mL of diethyl ether and 45.5 g of 1-methoxy-2-methylpropylene oxide were added to a reaction flask, and the mixture was stirred in an ice-cooled bath until it reached around 0 ° C. Cooled down. Further, 50.0 g of water was slowly added dropwise over 30 minutes and stirred for 15 minutes. Thereafter, 45.0 g of 40% methylamine aqueous solution was slowly added dropwise over 30 minutes under ice cooling, stirred for 30 minutes, returned to room temperature, and allowed to react for about 20 hours.
- Example 2 Production of alcohol compound of the present invention (Compound No. 66) To a reaction flask was added 20.0 g of 1,1-dimethoxy-2-methylbutan-2-ol, and 20 g of water and 36% hydrochloric acid were added to the reaction flask. The solution mixed with 0.8 mL was slowly added dropwise over 30 minutes at room temperature and stirred for about 60 hours. Thereafter, 31.4 g of 40% methylamine aqueous solution was slowly added dropwise over 30 minutes under ice-cooling, and the mixture was returned to room temperature and reacted for 3 hours.
- Example 3 Production of alcohol compound of the present invention (Compound No. 67) 30 g of diethyl ether and 2.5 g of water were added to a reaction flask, stirred in an ice-cooled bath, and cooled to around 0 ° C. To the reaction flask, 2.5 g of 1-methoxy-2-methylpropylene oxide was slowly added dropwise over 5 minutes and stirred for 15 minutes. Subsequently, 4.4 g of 33% ethylamine aqueous solution was slowly added dropwise over 10 minutes under ice-cooling, stirred for 30 minutes, returned to room temperature, and allowed to react for about 20 hours.
- the filtrate was thoroughly dehydrated by adding sufficiently dried molecular sieves 4A.
- the molecular weight of the obtained compound was measured by GC-MS.
- elemental analysis of the obtained compound was performed. These analytical values are shown in the following (1) and (2). From these results, the obtained compound was identified as Compound No. 71 was confirmed. The compound yield was 51%.
- Example 5 Production of alcohol compound of the present invention (Compound No. 74) To a reaction flask, 27.1 g of 3-hydroxy-3-methyl-2-butanone, 33.1 g of methanol, and molecular sieves 4A were added, and the reaction mixture was stirred at room temperature. Stir. To the reaction flask, 23.2 g of isopropylamine was slowly added dropwise at room temperature. After completion of dropping, the mixture was stirred at room temperature for 6 hours. Subsequently, stirring was stopped, 7.93 g of molecular sieves 4A was added, and the mixture was allowed to stand at room temperature for 15 hours. Then, filtration was performed and the filtrate was fractionated. Methanol was distilled off from the separated filtrate.
- the liquid residue was distilled under reduced pressure at a pressure of 3.8 kPa and a fraction temperature of 62 ° C.
- the yield of the obtained compound was 10.4 g, and the yield was 27%.
- the molecular weight of the obtained compound was measured by GC-MS. Further, 1 H-NMR of the obtained compound was measured and elemental analysis was performed. These analytical values are shown in the following (1), (2) and (3). From these results, the obtained compound was identified as Compound No. 74 was confirmed.
- reaction solution was ice-cooled and quenched by dropwise addition of 300 g of a 17% aqueous ammonium chloride solution, and the solution was transferred to a separatory funnel to separate the organic matter and dehydrated with an appropriate amount of magnesium sulfate.
- the solvent was removed in the vicinity of 80 ° C. in an oil bath under reduced pressure. Distillation was carried out under reduced pressure in the vicinity of 85 ° C. in an oil bath to obtain 20 g of colorless and transparent 1,1-dimethoxy-2-methylbutan-2-ol at a tower top temperature of 49 ° C.
- the yield of the obtained compound was 7.9 g, and the yield was 45%.
- the molecular weight of the obtained compound was measured by GC-MS.
- 1 H-NMR of the obtained compound was measured.
- reaction solution was ice-cooled, and 75 g of 20% aqueous ammonium chloride solution was added dropwise, and then 3 mL of 36% hydrochloric acid solution was added dropwise and stirred overnight. After separating and collecting only the organic layer, 18.5 g of 33% ethylamine aqueous solution was added dropwise thereto under ice-cooling and allowed to react for 20 hours. The pH of the reaction solution at this time was 10 to 11. Magnesium sulfate was added to the reaction solution for dehydration and filtration, and the solvent was removed at 60 ° C. under reduced pressure in an oil bath. Distillation was performed in an oil bath at 80 ° C. and a pressure of 300 Pa.
- the obtained compound was a colorless transparent liquid, the yield was 2.3 g, and the yield was 34%.
- the molecular weight of the obtained compound was measured by GC-MS.
- 1 H-NMR of the obtained compound was measured.
- Example 8 Production of metal alkoxide compound of the present invention (Compound No. 25) Obtained in Production Example 1 by adding 1.2 g of copper (II) methoxide and 20 g of dehydrated toluene to a reaction flask to make a suspension. 15% wt. 18 g of a tetrahydrofuran solution was added dropwise under a room temperature argon gas atmosphere. After stirring for 1 hour, the solution gradually turned purple and was stirred for 10 hours at room temperature. Tetrahydrofuran was distilled off at an oil bath temperature of 85 ° C, and then a solvent such as toluene was distilled off at an oil bath temperature of 120 ° C and slightly reduced pressure.
- the obtained purple solid was sublimated at 110 ° C. and 40 Pa to obtain the desired product.
- the obtained compound was a solid having a melting point of 195 ° C.
- the compound yield was 50%.
- the obtained compound was a compound having no spontaneous ignition.
- the obtained compound was subjected to single crystal X-ray structural analysis.
- FIG. 5 shows a molecular structure diagram obtained by single crystal X-ray structural analysis. From this result, the obtained compound was identified as Compound No. 25 was confirmed.
- the obtained compound was measured for TG-DTA under normal pressure or reduced pressure.
- Example 9 Production of metal alkoxide compound of the present invention (Compound No. 41) To a reaction flask, 6.01 g of hexaammine nickel (II) chloride and 39.00 g of tetrahydrofuran were added and stirred at room temperature. A solution in which 7.30 g of sodium alkoxide obtained by reacting sodium with the alcohol compound 1 obtained in Production Example 1 was suspended in 24 g of tetrahydrofuran was added dropwise at room temperature. After completion of the dropwise addition, the mixture was stirred at room temperature for 2 hours and then refluxed for 7 hours. Then, it stood to cool at room temperature, stirred for 15 hours, and filtered.
- II hexaammine nickel
- Tetrahydrofuran was removed from the obtained filtrate to obtain a green solid as a residue.
- the solid was sublimated under conditions of 100 Pa and 120 ° C.
- the yield of the obtained compound was 0.98 g, and the yield was 13%.
- the obtained compound was a green solid having a melting point of 212 ° C.
- the obtained compound was a compound having no spontaneous ignition.
- the obtained compound was subjected to single crystal X-ray structural analysis.
- FIG. 6 shows a molecular structure diagram obtained by single crystal X-ray structural analysis. From this result, the obtained compound was identified as Compound No. 41 was confirmed.
- the obtained compound was subjected to 1 H-NMR and TG-DTA measurements under normal pressure or reduced pressure. These analytical values are shown in the following (1), (2) and (3).
- Example 10 Production of metal alkoxide compound of the present invention (Compound No. 47) A reaction flask was charged with 5.08 g of hexaammine nickel (II) chloride and 15 g of tetrahydrofuran and stirred at room temperature. Among them, sodium and the compound No. obtained in Example 5 were used. A solution in which 7.10 g of sodium alkoxide obtained by reacting with 74 was suspended in 17 g of tetrahydrofuran was added dropwise at room temperature. After completion of the dropwise addition, the mixture was stirred at room temperature for 20 minutes and then refluxed for 5 hours. Then, it stood to cool at room temperature, stirred for 15 hours, and filtered.
- II hexaammine nickel
- Tetrahydrofuran was removed from the obtained filtrate to obtain a green solid as a residue.
- the solid was sublimated under conditions of 100 Pa and 100 ° C.
- the yield of the obtained compound was 4.87 g, and the yield was 65%.
- the obtained compound was a black-brown solid and had a melting point of 155 ° C.
- the obtained compound was a compound having no spontaneous ignition.
- the obtained compound was subjected to single crystal X-ray structural analysis.
- FIG. 7 shows a molecular structure diagram obtained by single crystal X-ray structural analysis. From this result, the obtained compound was identified as Compound No. 47 was confirmed.
- the obtained compound was subjected to 1 H-NMR and TG-DTA measurements under normal pressure or reduced pressure. These analytical values are shown in the following (1), (2) and (3).
- Example 11 Production of metal alkoxide compound of the present invention (Compound No. 57) A reaction flask was charged with 3.50 g of cobalt (II) chloride and 20 g of tetrahydrofuran and stirred at room temperature. A solution in which 7.11 g of sodium alkoxide obtained by reacting sodium with the alcohol compound 1 obtained in Production Example 1 was suspended in 10 g of tetrahydrofuran was added dropwise at room temperature. After completion of dropping, the mixture was stirred at room temperature for 23 hours and filtered. Tetrahydrofuran was removed from the obtained filtrate, and a dark brown solid was obtained as a residue. The solid was sublimated under conditions of 80 Pa and 145 ° C.
- the yield of the obtained compound was 0.91 g, and the yield was 13%.
- the obtained compound was an orange solid and had a melting point of 220 ° C.
- the obtained compound was a compound having no spontaneous ignition.
- the obtained compound was subjected to single crystal X-ray structural analysis.
- FIG. 8 shows a molecular structure diagram obtained by single crystal X-ray structural analysis. From this result, the obtained compound was identified as Compound No. 57 was confirmed. The obtained compound was measured for TG-DTA under normal pressure or reduced pressure. These analytical values are shown in the following (1) and (2).
- Example 12 Production of metal alkoxide compound of the present invention (Compound No. 63) A 200 ml four-necked flask was charged with 2.79 g of cobalt (II) chloride and 22 g of tetrahydrofuran and stirred at room temperature. Among them, sodium and the compound No. obtained in Example 5 were used. A solution obtained by suspending 6.46 g of sodium alkoxide obtained by reacting with 74 in 10 g of tetrahydrofuran was added dropwise at room temperature. After completion of dropping, the mixture was stirred at room temperature for 22 hours and filtered. Tetrahydrofuran was removed from the obtained filtrate to obtain a green solid as a residue.
- the solid was sublimated under conditions of 80 Pa and 100 ° C.
- the yield of the obtained compound was 2.24 g, and the yield was 34%.
- the obtained compound was a green solid and had a melting point of 145 ° C.
- the obtained compound was a compound having no spontaneous ignition.
- the obtained compound was subjected to single crystal X-ray structural analysis.
- FIG. 9 shows a molecular structure diagram obtained by single crystal X-ray structural analysis. From this result, the obtained compound was identified as Compound No. It was confirmed to be 63.
- the obtained compound was measured for TG-DTA under normal pressure or reduced pressure. These analytical values are shown in the following (1) and (2).
- Comparing Comparative Compound 3 which is a tertiary aminoalkoxide cobalt compound having a structure similar to that of Nos. 57 and 63, there is no significant difference in the temperature when TG is reduced by 50%. It was found that the thermal decomposition temperatures of 57 and 63 were greatly improved. From the above, it was found that the compound of the present invention is a particularly suitable compound as a raw material for the CVD method because the vapor pressure is the same as or higher than that of the conventional product and the thermal decomposition temperature is high.
- Example 13 Production of metal alkoxide compound of the present invention (Compound No. 17)
- 7.45 g of copper (II) methoxide was added to Compound No. 1 obtained in Example 1.
- a mixed solution of 65 and diethyl ether (400 mL) was slowly added dropwise under ice cooling. Then, it returned to room temperature and made it react for about 17 hours. Thereafter, diethyl ether was distilled off in a bath at 58 ° C. under normal pressure to obtain dark purple crystals, 350 mL of hexane was added, and the bath was heated at 56 ° C. to dissolve the crystals.
- the obtained solution was hot-filtered with a 0.2 ⁇ m membrane filter and recrystallized to obtain dark purple crystals.
- the recovery by this purification was 37%.
- the obtained compound was a solid having a melting point of 165 ° C.
- the obtained compound was a compound having no spontaneous ignition.
- the obtained compound was subjected to single crystal X-ray structural analysis.
- FIG. 10 shows a molecular structure diagram obtained by single crystal X-ray structural analysis. From this result, the obtained compound was identified as Compound No. 17 was confirmed.
- the obtained compound was measured for TG-DTA under normal pressure or reduced pressure.
- Example 14 Production of metal alkoxide compound of the present invention (Compound No. 18)
- Compound No. 18 obtained in Example 2 was added to 1.60 g of copper (II) methoxide under an argon gas atmosphere.
- a mixed solution of 66 and 80 mL of toluene was slowly added dropwise under ice cooling. Then, after returning to room temperature and reacting for about 20 hours, toluene was distilled off at 94 ° C. under reduced pressure to obtain dark purple crystals.
- the solid was sublimated in a glass tube oven at 83 ° C. under reduced pressure to obtain purple crystals.
- the obtained compound was a solid having a melting point of 103 ° C.
- the yield of the obtained compound was 43%.
- the obtained compound was a compound having no spontaneous ignition.
- the obtained compound was subjected to single crystal X-ray structural analysis.
- FIG. 11 shows a molecular structure diagram obtained by single crystal X-ray structural analysis. From this result, the obtained compound was identified as Compound No. 18 was confirmed.
- the obtained compound was measured for TG-DTA under normal pressure or reduced pressure. These analytical values are shown in the following (1) and (2).
- Example 15 Production of metal alkoxide compound of the present invention (Compound No. 19)
- Compound No. 19 obtained in Example 3 was mixed in a mixed solution of 0.65 g of copper (II) methoxide and 30 mL of hexane under an argon gas atmosphere.
- a mixed solution of 67 and 50 mL of diethyl ether was slowly added dropwise under ice cooling.
- diethyl ether was distilled off under a bath 70 degreeC normal pressure, and the dark purple crystal
- the solid was sublimated in a glass tube oven at 83 ° C. under reduced pressure to obtain purple crystals.
- the yield of the obtained compound was 38%.
- the obtained compound was a compound having no spontaneous ignition.
- the obtained compound was subjected to single crystal X-ray structural analysis.
- FIG. 12 shows a molecular structure diagram obtained by single crystal X-ray structural analysis. From this result, the obtained compound was identified as Compound No. 19 was confirmed.
- the obtained compound was measured for TG-DTA under normal pressure or reduced pressure. These analytical values are shown in the following (1) and (2).
- Example 16 Production of metal alkoxide compound of the present invention (Compound No. 20) Under an argon gas atmosphere, 0.786 g of copper (II) methoxide was added to Compound No. obtained in Example 6. 68, 4.24 wt. A 42% toluene solution was added dropwise. It dissolved immediately and became purple, and was stirred as it was at room temperature for 17 hours. Toluene was distilled off at an oil bath temperature of 70 ° C. and slightly reduced pressure, and then the remaining toluene was completely distilled off at an oil bath temperature of 90 ° C. and reduced pressure. The obtained purple solid was distilled at 100 ° C. and 40 Pa to obtain the desired product.
- the obtained compound was a solid having a melting point of 58 ° C.
- the compound yield was 48%.
- the obtained compound was subjected to single crystal X-ray structural analysis.
- FIG. 13 shows the molecular structure obtained by single crystal X-ray structural analysis. From this result, the obtained compound was identified as Compound No. 20 was confirmed.
- the obtained compound was subjected to TG-DTA measurement and DSC measurement under normal pressure or reduced pressure. These analytical values are shown in the following (1), (2) and (3).
- Example 17 Production of metal alkoxide compound of the present invention (Compound No. 23)
- Example 4 was added to a suspension of 1.2 g of copper (II) methoxide and 20 g of hexane dehydrated in a 100 mL three-necked flask.
- Compound no. 71 15% 15 wt. 20 g of a 20% ether solution was added dropwise under a room temperature argon gas atmosphere. After stirring for 1 hour, the solution gradually turned purple and was stirred for 10 hours at room temperature.
- Ether was distilled off at a bath of 50 to 60 ° C., and then a solvent such as hexane was distilled off at a bath of 110 ° C. The residue was sublimated at 110 ° C.
- FIG. 14 shows a molecular structure diagram obtained by single crystal X-ray structural analysis. From this result, the obtained compound was identified as Compound No. 23 was confirmed. The obtained compound was measured for TG-DTA under normal pressure or reduced pressure. These analytical values are shown in the following (1) and (2).
- Example 18 Production of metal alkoxide compound of the present invention (Compound No. 60) To a reaction flask, 1.15 g of cobalt-bis-trimethylsilylamide and 20 g of dehydrated toluene were added and mixed well. This solution was ice-cooled, and 2-ethylimino-3-methylpentan-3-ol, 1.05 g was added dropwise over 5 minutes. The solution turned from dark blue to brown. After completion of dropping, the mixture was stirred overnight at room temperature. Thereafter, the solvent was removed in an oil bath at 100 ° C. under reduced pressure, and the produced cobalt complex (brown solid) was sufficiently dried.
- FIG. 15 shows the results of single crystal X-ray structural analysis. From this result, the obtained compound was identified as Compound No. 60 was confirmed. The obtained compound was subjected to TG-DTA measurement and DSC measurement under normal pressure or reduced pressure. These analytical values are shown in the following (1), (2) and (3).
- Example 19 Production of copper oxide thin film
- the copper compound of the present invention (Compound No. 18) obtained in Example 14 above was used as a raw material for chemical vapor deposition, and CVD using the apparatus shown in FIG.
- a copper oxide thin film was manufactured on a silicon wafer substrate.
- the film thickness was 120 nm, and the film composition was oxidized. It was copper.
- Vaporization chamber temperature 50 ° C., reaction pressure: 100 Pa, reaction time: 60 minutes, substrate temperature: 150 ° C., carrier gas (Ar): 100 ml / min, oxidizing gas (oxygen): 200 ml / min
- Example 20 Production of metallic copper thin film
- the copper compound of the present invention (Compound No. 23) obtained in Example 17 above was used as a raw material for chemical vapor deposition, and heat under the following conditions using the apparatus shown in FIG. A metal copper thin film was produced on a silicon wafer substrate by the CVD method.
- the film thickness was 100 nm, and the film composition was metal. It was copper.
- Raw material temperature 50 ° C.
- reaction system pressure 100 Pa
- reaction time 60 minutes
- substrate temperature 185 ° C.
- Comparative Example 1 Production of comparative metallic copper thin film Using comparative compound 1 as a raw material for chemical vapor deposition, a metallic copper thin film was formed on a silicon wafer substrate by thermal CVD using the apparatus shown in FIG. Manufactured. About the obtained thin film, when the film thickness measurement by X-ray reflectivity method, the thin film structure and the thin film composition were confirmed by X-ray diffraction method and X-ray photoelectron spectroscopy, the film thickness was 75 nm, and the film composition was metal. It was copper. (Conditions) Vaporization chamber temperature: 50 ° C., reaction pressure: 100 Pa, reaction time: 60 minutes, substrate temperature: 240 ° C., carrier gas (Ar): 100 ml / min, no reaction gas
- Example 20 has a higher deposition rate of the metallic copper thin film than Comparative Example 1, and the polycrystalline of the metallic copper thin film obtained in Example 20 is obtained.
- the average particle size is smaller than the polycrystalline average particle size of the comparative metallic copper thin film obtained in Comparative Example 1, and the electrical resistance value of the metallic copper thin film obtained in Example 20 is obtained in Comparative Example 1. It was found that the electric resistance value of the comparative metal copper thin film was two times or more lower. As described above, according to the present invention, it was found that a metal copper thin film having excellent characteristics can be obtained.
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Abstract
Description
従って、本発明の目的は、CVD法による薄膜形成用原料として好適な物性を有する金属アルコキシド化合物を提供することにあり、特に、金属銅薄膜形成用原料として好適な物性を有する金属アルコキシド化合物を提供することにある。
本発明の薄膜形成用原料は、後述するように、更に、有機溶剤及び/又は求核性試薬を含有してもよい。本発明の薄膜形成用原料は、上記説明のとおり、プレカーサである金属アルコキシド化合物の物性がCVD法、ALD法に好適であるので、特に化学気相成長用原料(以下CVD用原料ということもある)として有用である。
また、堆積速度は、原料の供給条件(気化温度、気化圧力)、反応温度、反応圧力によりコントロールすることが出来る。堆積速度は、大きいと得られる薄膜の特性が悪化する場合があり、小さいと生産性に問題を生じる場合があるので、0.01~100nm/分が好ましく、1~50nm/分がより好ましい。また、ALD法の場合は、所望の膜厚が得られるようにサイクルの回数でコントロールされる。
実施例19及び20は、本発明の金属アルコキシド化合物(銅化合物)を用いた金属銅又は酸化銅薄膜の製造例であり、比較例1は、比較の金属アルコキシド化合物(銅化合物)を用いた金属銅薄膜の製造例である。
評価例1では、実施例8~12で製造した本発明の金属アルコキシド化合物及びこれらと構造が類似する比較化合物の物性(熱安定性)を評価した。
評価例2では、実施例13~15及び17で製造した本発明の金属アルコキシド化合物(銅化合物)及びこれらと構造が類似する比較化合物の物性(熱安定性)を評価した。
評価例3では、実施例20及び比較例1で製造した金属銅薄膜の物性を評価した。
反応フラスコにジエチルエーテル100mL及び1-メトキシ2-メチルプロピレンオキシド45.5gを加え、氷冷バスにて攪拌し0℃付近まで冷却した。更に水50.0gを30分かけてゆっくりと滴下し、15分撹拌した。その後、40%メチルアミン水溶液45.0gを氷冷下30分かけてゆっくりと滴下し、30分撹拌し、室温に戻して約20時間反応させた。その後、ジエチルエーテル300mLにて抽出を行い、得られた有機層を硫酸マグネシウム及びモレキュラーシーブス4Aにて脱水処理した。得られた化合物の分子量をガスクロマトグラフ質量分析計(以下、GC-MSと略す場合がある)により測定した。また、得られた化合物の元素分析を行った。これらの分析値を下記(1)及び(2)に示す。これらの結果から、得られた化合物が化合物No.65であることが確認された。尚、化合物の収率は45%であった。
(1)GC-MS m/z:101(M+)
(2)元素分析 C:59.0質量%、H:11.5質量%、O:15.2質量%、N:14.3質量%(理論値;C:59.4%、H:10.9%、O:15.8%、N:13.9%)
反応フラスコに1,1-ジメトキシ-2-メチルブタン-2-オール20.0gを加え、該反応フラスコへ水20g及び36%塩酸0.8mLを混合した溶液を、室温下30分かけてゆっくりと滴下し、約60時間撹拌した。その後、40%メチルアミン水溶液31.4gを氷冷下で30分かけてゆっくりと滴下した後、室温に戻して3時間反応させた。その後、トルエン80mLにて抽出を行い、得られた有機層を硫酸マグネシウム及びモレキュラーシーブス4Aにて脱水処理した。得られた化合物の分子量をGC-MSにより測定した。また、得られた化合物の元素分析を行った。これらの分析値を下記(1)及び(2)に示す。これらの結果から、得られた化合物が化合物No.66であることが確認された。尚、化合物の収率は、54%であった。
(1)GC-MS m/z:115(M+)
(2)元素分析 C:63.0質量%、H:10.8質量%、O:13.5質量%、N:12.6質量%(理論値;C:62.6%、H:11.3%、O:13.9%、N:12.2%)
反応フラスコにジエチルエーテル30gと水2.5gを加え、氷冷バスにて攪拌し0℃付近まで冷却した。該反応フラスコへ1-メトキシ2-メチルプロピレンオキシド2.5gを5分かけてゆっくりと滴下し、15分撹拌した。続いて33%エチルアミン水溶液4.4gを氷冷下10分かけてゆっくりと滴下し、30分撹拌した後、室温に戻して約20時間反応させた。その後、ジエチルエーテル50mLにて抽出を行い、得られた有機層を硫酸マグネシウム及びモレキュラーシーブス4Aにて脱水処理した。得られた化合物の分子量をGC-MSにより測定した。また、得られた化合物の元素分析を行った。これらの分析値を下記(1)及び(2)に示す。これらの結果から、得られた化合物が化合物No.67であることが確認された。尚、化合物の収率は、52%であった。
(1)GC-MS m/z:115(M+)
(2)元素分析 C:62.9質量%、H:11.0質量%、O:14.6質量%、N:11.9質量%(理論値;C:62.6%、H:11.3%、O:13.9%、N:12.2%)
反応フラスコにジエチルエーテル30gと水2.5gの混合液を氷冷下撹拌し、液温を10℃まで冷却した。該反応フラスコへ1-メトキシ-2-メチルプロピレンオキシド2.5gを同温度で滴下して30分撹拌した。次いで、イソプロピルアミンを氷冷下同温度で滴下して30分撹拌した。その後、室温に戻して8時間撹拌した。硫酸マグネシウムを適量加えて溶液中の水を吸着させて、ろ別した。ろ液に十分乾燥させたモラキュラーシーブス4Aを加えて完全に脱水した。得られた化合物の分子量をGC-MSにより測定した。また、得られた化合物の元素分析を行った。これらの分析値を下記(1)及び(2)に示す。これらの結果から、得られた化合物が化合物No.71であることが確認された。尚、化合物の収率は、51%であった。
(1)GC-MS m/z:129(M+)
(2)元素分析 C:64.8質量%、H:11.3質量%、O:12.9質量%、N:11.2質量%(理論値;C:65.1%、H:11.6%、O:12.4%、N:10.9%)
反応フラスコに3-ヒドロキシ-3-メチル-2-ブタノン27.1g、メタノール33.1g及びモレキュラーシーブス4Aを加え、室温下で撹拌した。該反応フラスコへ、イソプロピルアミン23.2gを室温下でゆっくり滴下した。滴下終了後、室温下で6時間撹拌した。続いて、撹拌停止し、モレキュラーシーブス4Aを7.93g加え、室温下で15時間静止した。その後、ろ過を行い、ろ液を分別した。分別したろ液からメタノールを留去した。液体残渣を、圧力3.8kPa、留分温度62℃で減圧蒸留した。得られた化合物の収量は10.4gであり、収率は27%であった。得られた化合物の分子量をGC-MSにより測定した。また、得られた化合物の1H-NMRを測定し、元素分析を行った。これらの分析値を下記(1)、(2)及び(3)に示す。これらの結果から、得られた化合物が化合物No.74であることが確認された。
(1)1H-NMR(溶媒:重ベンゼン)(ケミカルシフト:多重度:H数)
(5.996:t:1)(3.332:m:1)(1.329:t:3)(1.232:s:6)(0.967:d:6)
(2)GC-MS m/z:144(M+)
(3)元素分析 C:67.6質量%、H:12.3質量%、O:10.8質量%、N:9.5質量%(理論値;C:67.1%、H:11.9%、O:11.2%、N:9.8%)
反応フラスコに、エチルマグネシウムブロミドのテトラヒドロフラン溶液(7.4%、440g)を加え、氷冷バスにて撹拌し0℃付近まで冷却した。この溶液にピルビンアルデヒドジメチルアセタール(30g)を30分で滴下し、グリニャール反応を行った。その後室温に戻して12時間反応を行った。反応液を氷冷して、17%塩化アンモニウム水溶液300gを滴下してクエンチし、溶液を分液ロートに移して有機物を分液し、適量の硫酸マグネシウムで脱水した。この有機層をろ過後、減圧下オイルバス80℃付近で脱溶媒を行った。オイルバス85℃付近減圧下で蒸留を行い、塔頂温度49℃にて無色透明の1,1-ジメトキシ―2-メチルブタン-2-オール、20gを得た。この1,1-ジメトキシメチルブタン-2-オール、20gに純水40gと36%塩酸2.5gを氷冷下で加えて、終夜撹拌を行った。その後、33%エチルアミン水溶液74gを氷冷下滴下し、10時間反応させた。この時の反応液のpHは10~11であった。水溶液に溶け込んでいる目的物を回収するためトルエン150gを反応液に加えて分液ロートで有機層を抽出・分液し、硫酸マグネシウムで脱水・ろ過した後、減圧下オイルバス90℃にて脱トルエンを行った。得られた化合物の収量は7.9gであり、収率は45%であった。得られた化合物の分子量をGC-MSにより測定した。また、得られた化合物の1H-NMRを測定した。これらの分析値を下記(1)及び(2)に示す。これらの結果から、得られた化合物が化合物No.68であることを確認した。
(1)GC-MS m/z: 129(M+)
(2)1NMR(溶媒:重ベンゼン)(ケミカルシフト:多重度:H数)
(7.116:s:1)(4.413:s:1)(3.153~3.193:m:2)(1.501~1.573:m:1)(1.347~1.419:m:1)(1.152:s:3)(0.981~1.017:t:3)(0.837~0.875:t:3)
反応フラスコに、エチルマグネシウムブロミドのジエチルエーテル溶液(39%、16g)を加え、氷冷バスにて撹拌し0℃付近まで冷却した。この溶液に3,3-ジメトキシ-2-ブタノン(6.19g)を1時間で滴下し、グリニャール反応を行った。その後室温に戻して12時間反応を行った。反応液を氷冷して、20%塩化アンモニウム水溶液75gを滴下した後、36%塩酸溶液3mLを滴下して終夜撹拌した。有機層のみ分液・回収した後、これに33%エチルアミン水溶液18.5gを氷冷下滴下し、20時間反応させた。この時の反応液のpH10~11であった。反応液に硫酸マグネシウムを加えて脱水・ろ過し、減圧下オイルバス60℃にて脱溶媒を行った。蒸留はオイルバス80℃、圧力300Paにて実施した。得られた化合物は無色透明液体であり、収量は2.3gであり、収率は34%であった。得られた化合物の分子量をGC-MSにより測定した。また、得られた化合物の1H-NMRを測定した。これらの分析値を下記(1)及び(2)に示す。これらの結果から、得られた化合物が化合物No.76であることを確認した。
(1)GC-MS m/z: 143.23(M+)
(2)1NMR(溶媒:重ベンゼン)(ケミカルシフト:多重度:H数)
(5.85:s:1)(2.948~3.003:q:2)(1.602~1.692:m:1)(1.379~1.475:m:1)(1.254:s:3)(1.223:s:3)(1.040~1.077:t:3)(0.826~0.863:t:3)
反応フラスコ中でメチルアミンのテトラヒドロフラン溶液(2M、200mL)を氷冷し、3-ヒドロキシ-3-メチル-2-ブタノン24gを滴下して液温10℃前後にて反応させた。その後、室温に戻して8時間撹拌した。硫酸マグネシウムを適量加えて溶液中の水を吸着させて、ろ別した。ろ液に十分乾燥させたモラキュラーシーブス4Aを加えて完全に脱水した。得られた化合物の分子量をGC-MSにより測定した。また、得られた化合物の元素分析を行った。これらの分析値を下記(1)及び(2)に示す。これらの結果から、得られた化合物が下記アルコール化合物1であることが確認された。尚、化合物の収率は、49%であった。
(1)GC-MS m/z:115(M+)
(2)元素分析 C:61.7質量%、H:11.3質量%、O:13.9質量%、N:12.2質量%(理論値;C:62.6%、H:11.3%、O:13.9%、N:12.2%)
反応フラスコに銅(II)メトキシド1.2gと脱水処理したトルエン20gを加えて懸濁液とし、製造例1で得られたアルコール化合物1の15%wt.%テトラヒドロフラン溶液18gを室温アルゴンガス雰囲気下化で滴下した。1時間撹拌後に溶液は徐々に紫色を呈し、そのまま10時間室温で撹拌した。オイルバス温度85℃でテトラヒドロフランを留去し、次いでオイルバス温度120℃、微減圧下でトルエン等の溶媒を留去した。得られた紫色固体を110℃、40Paで昇華して目的物を得た。得られた化合物は融点195℃の固体であった。化合物の収率は、50%であった。得られた化合物は自然発火性の無い化合物であった。得られた化合物について、単結晶X線構造解析を行った。〔図5〕に単結晶X線構造解析により得られた分子構造図を示す。この結果から、得られた化合物が化合物No.25であることが確認された。また、得られた化合物について、常圧又は減圧下におけるTG-DTAの測定を行った。これらの分析値を下記(1)及び(2)に示す。
(1)常圧TG-DTA
質量50%減少温度:205℃ (Ar流量:100ml/min、昇温:10℃/min)
(2)減圧TG-DTA
質量50%減少温度:154℃ (圧力10Torr、Ar流量:50ml/min、昇温:10℃/min)
反応フラスコにヘキサアンミンニッケル(II)塩化物を6.01g、テトラヒドロフラン39.00gを加え、室温下で撹拌した。その中に、ナトリウムと製造例1で得られたアルコール化合物1とを反応させることで得たナトリウムアルコキシド7.30gをテトラヒドロフラン24g中に懸濁させた溶液を室温下で滴下した。滴下終了後、室温下で2時間撹拌し、続いて7時間還流した。その後、室温で放冷し15時間撹拌し、ろ過を行った。得られたろ液からテトラヒドロフランを除去し、残渣として緑色固体を得た。その固体を100Pa、120℃の条件下で昇華させた。得られた化合物の収量は0.98gであり、収率は13%であった。また得られた化合物は融点212℃の緑色固体であった。得られた化合物は自然発火性の無い化合物であった。得られた化合物について、単結晶X線構造解析を行った。〔図6〕に単結晶X線構造解析により得られた分子構造図を示す。この結果から、得られた化合物が化合物No.41であることが確認された。また、得られた化合物について、1H-NMR及び常圧又は減圧下におけるTG-DTAの測定を行った。これらの分析値を下記(1)、(2)及び(3)に示す。
(1)1H-NMR(溶媒:重ベンゼン)(ケミカルシフト:多重度:H数)
(2.425:s:6)(1.246:s:12)(0.955:s:6)
(2)常圧TG-DTA
質量50%減少温度:218℃ (Ar流量:100ml/min、昇温:10℃/min)
(3)減圧TG-DTA
質量50%減少温度:160℃ (圧力10Torr、Ar流量:50ml/min、昇温:10℃/min)
反応フラスコにヘキサアンミンニッケル(II)塩化物を5.08g及びテトラヒドロフラン15gを仕込み、室温下で撹拌した。その中に、ナトリウムと実施例5で得られた化合物No.74とを反応させることで得たナトリウムアルコキシド7.10gをテトラヒドロフラン17g中に懸濁させた溶液を室温下で滴下した。滴下終了後、室温下で20分間撹拌し、続いて5時間還流した。その後、室温で放冷し15時間撹拌し、ろ過を行った。得られたろ液からテトラヒドロフランを除去し、残渣として緑色固体を得た。その固体を100Pa、100℃の条件下で昇華させた。得られた化合物の収量は4.87gであり、収率は65%であった。得られた化合物は黒茶色固体で、融点155℃であった。得られた化合物は自然発火性の無い化合物であった。得られた化合物について、単結晶X線構造解析を行った。〔図7〕に単結晶X線構造解析により得られた分子構造図を示す。この結果から、得られた化合物が化合物No.47であることが確認された。また、得られた化合物について、1H-NMR及び常圧又は減圧下におけるTG-DTAの測定を行った。これらの分析値を下記(1)、(2)及び(3)に示す。
(1)1H-NMR(溶媒:重ベンゼン)(ケミカルシフト:多重度:H数)
(3.774:sept:2)(1.444:d:12)(1.184:s:12)(1.060:s:6)
(2)常圧TG-DTA
質量50%減少温度:203℃ (Ar流量:100ml/min、昇温:10℃/min)
(3)減圧TG-DTA
質量50%減少温度:140℃ (圧力10Torr、Ar流量:50ml/min、昇温:10℃/min)
反応フラスコに塩化コバルト(II)を3.50g、テトラヒドロフランを20g仕込み、室温下で撹拌した。その中に、ナトリウムと製造例1で得られたアルコール化合物1とを反応させることで得たナトリウムアルコキシド7.11gをテトラヒドロフラン10g中に懸濁させた溶液を室温下で滴下した。滴下終了後、室温下で23時間撹拌し、ろ過を行った。得られたろ液からテトラヒドロフランを除去し、残渣として暗褐色固体を得た。その固体を80Pa、145℃の条件下で昇華させた。得られた化合物の収量は0.91gであり、収率は13%であった。得られた化合物は橙色固体で融点220℃であった。得られた化合物は自然発火性の無い化合物であった。得られた化合物について、単結晶X線構造解析を行った。〔図8〕に単結晶X線構造解析により得られた分子構造図を示した。この結果から、得られた化合物が化合物No.57であることが確認された。また、得られた化合物について、常圧又は減圧下におけるTG-DTAの測定を行った。これらの分析値を下記(1)及び(2)に示す。
(1)常圧TG-DTA
質量50%減少温度:219℃ (Ar流量:100ml/min、昇温:10℃/min)
(2)減圧TG-DTA
質量50%減少温度:166℃ (圧力10Torr、Ar流量:50ml/min、昇温:10℃/min)
200mlの4つ口フラスコに塩化コバルト(II)を2.79g、テトラヒドロフラン22gを仕込み、室温下で撹拌した。その中に、ナトリウムと実施例5で得られた化合物No.74とを反応させることで得たナトリウムアルコキシド6.46gをテトラヒドロフラン10g中に懸濁させた溶液を室温下で滴下した。滴下終了後、室温下で22時間撹拌し、ろ過を行った。得られたろ液からテトラヒドロフランを除去し、残渣として緑色固体を得た。その固体を80Pa、100℃の条件下で昇華した。得られた化合物の収量は2.24gであり、収率は34%であった。得られた化合物は緑色固体で融点145℃であった。得られた化合物は自然発火性の無い化合物であった。得られた化合物について、単結晶X線構造解析を行った。〔図9〕に単結晶X線構造解析により得られた分子構造図を示した。この結果から、得られた化合物が化合物No.63であることが確認された。得られた化合物について、常圧又は減圧下におけるTG-DTAの測定を行った。これらの分析値を下記(1)及び(2)に示す。
(1)常圧TG-DTA
質量50%減少温度:227℃ (Ar流量:100ml/min、昇温:10℃/min)
(2)減圧TG-DTA
質量50%減少温度:149℃ (圧力10Torr、Ar流量:50ml/min、昇温:10℃/min)
実施例8~12で得られた本発明の化合物No.25、41、47、57、63並びに下記の比較化合物1、2及び3について、TG-DTA測定装置を用いて、減圧雰囲気下(10torr)での加熱によってサンプル重量が50質量%減少した時点の温度(以下、TG50%減少時温度と略す場合がある)を確認した。また、DSC測定装置を用いて熱分解が発生する温度を測定することで、各化合物の熱安定性を確認した。結果を〔表1〕に示す。
アルゴンガス雰囲気下、銅(II)メトキシド7.45gに実施例1で得られた化合物No.65とジエチルエーテル400mLの混合溶液を氷冷下ゆっくりと滴下した。その後、室温に戻して約17時間反応させた。その後、ジエチルエーテルをバス58℃常圧下にて留去し、暗紫色結晶を得た後、ヘキサン350mLを加え、バス56℃で加熱して結晶を溶解させた。得られた溶液を0.2μmメンブランフィルターにて熱ろ過し、再結晶を行うことで暗紫色結晶を得た。この精製による回収率は37%であった。得られた化合物は融点165℃の固体であった。得られた化合物は自然発火性の無い化合物であった。得られた化合物について、単結晶X線構造解析を行った。〔図10〕に単結晶X線構造解析により得られた分子構造図を示す。この結果から、得られた化合物が化合物No.17であることが確認された。また、得られた化合物について、常圧又は減圧下におけるTG-DTAの測定を行った。これらの分析値を下記(1)及び(2)に示す。
(1)常圧TG-DTA
質量50%減少温度:173℃ (Ar流量:100ml/min、昇温:10℃/min)
(2)減圧TG-DTA
質量50%減少温度:121℃ (圧力10Torr、Ar流量:50ml/min、昇温:10℃/min)
アルゴンガス雰囲気下、銅(II)メトキシド1.60gに実施例2で得られた化合物No.66とトルエン80mLの混合溶液を氷冷下ゆっくりと滴下した。その後、室温に戻して約20時間反応させた後、トルエンを減圧下、バス94℃で留去し、暗紫色結晶を得た。その固体を、減圧下、83℃でガラスチューブオーブンにて昇華することにより、紫色結晶を得た。得られた化合物は融点103℃の固体であった。得られた化合物の収率は、43%であった。得られた化合物は自然発火性の無い化合物であった。得られた化合物について、単結晶X線構造解析を行った。〔図11〕に単結晶X線構造解析により得られた分子構造図を示した。この結果から、得られた化合物が化合物No.18であることが確認された。また、得られた化合物について、常圧又は減圧下におけるTG-DTAの測定を行った。これらの分析値を下記(1)及び(2)に示す。
(1)常圧TG-DTA
質量50%減少温度:169℃ (Ar流量:100ml/min、昇温:10℃/min)
(2)減圧TG-DTA
質量50%減少温度:116℃ (圧力10Torr、Ar流量:50ml/min、昇温:10℃/min)
アルゴンガス雰囲気下、銅(II)メトキシド0.65gとヘキサン30mLの混合溶液に実施例3で得られた化合物No.67とジエチルエーテル50mLの混合溶液を氷冷下ゆっくりと滴下した。その後、室温に戻して約16時間反応させた後、ジエチルエーテルをバス70℃常圧下にて留去し、暗紫色結晶を得た。その固体を、減圧下、83℃でガラスチューブオーブンにて昇華することにより、紫色結晶を得た。得られた化合物の収率は、38%だった。得られた化合物は自然発火性の無い化合物であった。得られた化合物について、単結晶X線構造解析を行った。〔図12〕に単結晶X線構造解析により得られた分子構造図を示した。この結果から、得られた化合物が化合物No.19であることが確認された。また、得られた化合物について、常圧又は減圧下におけるTG-DTAの測定を行った。これらの分析値を下記(1)及び(2)に示す。
(1)常圧TG-DTA
質量50%減少温度:170℃ (Ar流量:100ml/min、昇温:10℃/min)
(2)減圧TG-DTA
質量50%減少温度:116℃ (圧力10Torr、Ar流量:50ml/min、昇温:10℃/min)
アルゴンガス雰囲気下、銅(II)メトキシド0.786gに、実施例6で得られた化合物No.68の4.24wt.%トルエン溶液42gを滴下した。すぐに溶解して紫色を呈し、そのまま室温下で17時間撹拌した。オイルバス温度70℃、微減圧下でトルエンを留去し、次いでオイルバス温度90℃、減圧下で残留するトルエンを完全に留去した。得られた紫色固体を100℃、40Paで蒸留して目的物を得た。得られた化合物は融点58℃の固体であった。化合物の収率は48%であった。得られた化合物について、単結晶X線構造解析を行った。〔図13〕に単結晶X線構造解析により得られた分子構造を示す。この結果から、得られた化合物が化合物No.20であることを確認した。また、得られた化合物について、常圧又は減圧下におけるTG-DTAの測定及びDSC測定を行った。これらの分析値を下記(1)、(2)及び(3)に示す。
(1)常圧TG-DTA
質量50%減少温度:174℃(Ar流量:100ml/min、昇温10℃/min.)
(2)減圧TG-DTA
質量50%減少温度:108℃(圧力10Torr、Ar流量:50ml/min、昇温10℃/min.)
(3)DSC熱分解発生温度
168℃
100mLの3つ口フラスコに、銅(II)メトキシド1.2gと脱水処理したヘキサン20gの懸濁液に、実施例4で得られた化合物No.71の15%15wt.%エーテル溶液20gを室温アルゴンガス雰囲気下化で滴下した。1時間撹拌後に溶液は徐々に紫色を呈し、そのまま10時間室温で撹拌した。バス50~60℃でエーテルを留去し、次いでバス110℃でヘキサン等の溶媒を留去した。残渣を110℃、40Paで昇華した。得られた化合物は融点185℃の固体であった。収率は、40%であった。得られた化合物は自然発火性の無い化合物であった。得られた化合物について、単結晶X線構造解析を行った。〔図14〕に単結晶X線構造解析により得られた分子構造図を示した。この結果から、得られた化合物が化合物No.23であることが確認された。また、得られた化合物について、常圧又は減圧下におけるTG-DTAの測定を行った。これらの分析値を下記(1)及び(2)に示す。
(1)常圧TG-DTA
質量50%減少温度:184℃ (Ar流量:100ml/min、昇温:10℃/min)
(2)減圧TG-DTA
質量50%減少温度:131℃ (圧力10Torr、Ar流量:50ml/min、昇温:10℃/min)
反応フラスコに、コバルト-ビス-トリメチルシリルアミド、1.15gと脱水トルエン20gを加え、十分に混合させた。この溶液を氷冷し、2-エチルイミノ-3-メチルペンタン-3-オール、1.05gを5分間かけて滴下した。溶液は濃青色から茶褐色に変化した。滴下終了後、室温にて終夜撹拌させた。その後、減圧下オイルバス100℃にて脱溶媒を行い、生成したコバルト錯体(茶褐色固体)を十分に乾燥させた。このコバルト錯体を50mlフラスコに入れ昇華精製装置に接続した。オイルバス100~110℃、40Paにて昇華精製を行い赤褐色結晶、0.50gを得た。化合物の収率は53%であった。得られた固体の融点は104℃であった。〔図15〕に単結晶X線構造解析の結果を示す。この結果から、得られた化合物が化合物No.60であることを確認した。また、得られた化合物について、常圧又は減圧下におけるTG-DTAの測定及びDSC測定を行った。これらの分析値を下記(1)、(2)及び(3)に示す。
(1)常圧TG-DTA
質量50%減少温度:211.9℃(Ar流量:100ml/min.、昇温10℃/min.)
(2)減圧TG-DTA
質量50%減少温度:128.8℃(圧力10Torr、Ar流量:50ml/min.、昇温10℃/min.)
(3)DSC熱分解発生温度
315℃
実施例13~15及び17で得られた本発明のアルコキシド銅化合物である化合物No.17、18、19、23及び上記の比較化合物1について、TG-DTA測定装置を用いて、減圧雰囲気下(10torr)での加熱によってサンプル重量が50質量%減少した時点の温度を確認した。また、DSC測定装置を用いて熱分解が発生する温度を測定することで、各化合物の熱安定性を確認した。結果を〔表2〕に示す。
以上により、本発明の銅化合物はCVD法による金属銅薄膜用原料として特に好適なものであることがわかった。
上記実施例14で得た本発明の銅化合物(化合物No.18)を化学気相成長用原料とし、図3に示す装置を用いて以下の条件のCVD法により、シリコンウエハ基板上に酸化銅薄膜を製造した。得られた薄膜について、X線反射率法による膜厚測定、X線回折法及びX線光電子分光法による薄膜構造及び薄膜組成の確認を行ったところ、膜厚は120nmであり、膜組成は酸化銅であった。
(条件)気化室温度:50℃、反応圧力:100Pa、反応時間:60分、基板温度:150℃、キャリアガス(Ar):100ml/min、酸化ガス(酸素):200ml/min
上記実施例17で得た本発明の銅化合物(化合物No.23)を化学気相成長用原料とし、図3に示す装置を用いて以下の条件の熱CVD法により、シリコンウエハ基板上に金属銅薄膜を製造した。得られた薄膜について、X線反射率法による膜厚測定、X線回折法及びX線光電子分光法による薄膜構造及び薄膜組成の確認を行ったところ、膜厚は100nmであり、膜組成は金属銅であった。
(条件)原料温度:50℃、反応系圧力:100Pa、反応時間:60分、基板温度:185℃、キャリアガス(Ar):100ml/min、反応ガスなし
比較化合物1を化学気相成長用原料とし、図3に示す装置を用いて以下の条件の熱CVD法により、シリコンウエハ基板上に金属銅薄膜を製造した。得られた薄膜について、X線反射率法による膜厚測定、X線回折法及びX線光電子分光法による薄膜構造及び薄膜組成の確認を行ったところ、膜厚は75nmであり、膜組成は金属銅であった。
(条件)気化室温度:50℃、反応圧力:100Pa、反応時間:60分、基板温度:240℃、キャリアガス(Ar):100ml/min、反応ガスなし
実施例20により得られた金属銅薄膜と比較例1により得られた比較の金属銅薄膜を比較した。結果を〔表3〕に示した。
Claims (6)
- 上記一般式(I)において、Mが銅、ニッケル、コバルトである請求項1に記載の金属アルコキシド化合物。
- 上記一般式(I)において、Mが銅であり、R2が水素原子である請求項1に記載の金属アルコキシド化合物。
- 請求項1~3の何れか1項に記載の金属アルコキシド化合物を含有してなる薄膜形成用原料。
- 請求項4に記載の薄膜形成用原料を気化させて得た、上記金属アルコキシド化合物を含有する蒸気を、基体が設置された成膜チャンバー内に導入し、該金属アルコキシド化合物を分解及び/又は化学反応させて該基体の表面に金属を含有する薄膜を形成する薄膜の製造方法。
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WO2015163090A1 (ja) * | 2014-04-21 | 2015-10-29 | 株式会社Adeka | アルコキシド化合物、薄膜形成用原料、薄膜の製造方法及びアルコール化合物 |
WO2015174153A1 (ja) * | 2014-05-14 | 2015-11-19 | 株式会社Adeka | コバルト化合物、薄膜形成用原料及び薄膜の製造方法 |
WO2016021385A1 (ja) * | 2014-08-05 | 2016-02-11 | 株式会社Adeka | アルコキシド化合物、薄膜形成用原料、薄膜の形成方法及びアルコール化合物 |
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WO2018235530A1 (ja) | 2017-06-21 | 2018-12-27 | 株式会社Adeka | 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 |
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US10892186B2 (en) | 2017-10-14 | 2021-01-12 | Applied Materials, Inc. | Integration of ALD copper with high temperature PVD copper deposition for BEOL interconnect |
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Publication number | Publication date |
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KR20150082114A (ko) | 2015-07-15 |
CN104470892A (zh) | 2015-03-25 |
EP2921472B1 (en) | 2017-01-04 |
JP6200429B2 (ja) | 2017-09-20 |
US9896468B2 (en) | 2018-02-20 |
US20180134739A1 (en) | 2018-05-17 |
IL236587A0 (en) | 2015-02-26 |
IL236587A (en) | 2016-10-31 |
CN104470892B (zh) | 2017-05-17 |
TWI591070B (zh) | 2017-07-11 |
US20150175642A1 (en) | 2015-06-25 |
TW201422628A (zh) | 2014-06-16 |
JPWO2014077089A1 (ja) | 2017-01-05 |
EP2921472A4 (en) | 2016-06-15 |
KR102046334B1 (ko) | 2019-11-19 |
US10155784B2 (en) | 2018-12-18 |
EP2921472A1 (en) | 2015-09-23 |
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