WO2012070262A1 - 接合材料および接合体、並びに接合方法 - Google Patents
接合材料および接合体、並びに接合方法 Download PDFInfo
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- WO2012070262A1 WO2012070262A1 PCT/JP2011/061089 JP2011061089W WO2012070262A1 WO 2012070262 A1 WO2012070262 A1 WO 2012070262A1 JP 2011061089 W JP2011061089 W JP 2011061089W WO 2012070262 A1 WO2012070262 A1 WO 2012070262A1
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- bonding
- bonding material
- bonded
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Definitions
- the present invention relates to a bonding material, a bonded body using the bonding material, and a bonding method.
- a method of using silver brazing is considered as a bonding material and a bonding method candidate that can meet the requirements, but high temperature heating is required during the heat treatment operation.
- electronic parts have been refined and miniaturized, and it is desired that the heating temperature during the joining operation be kept low. Under such circumstances, a bonding material and a bonding method using silver nanoparticles have attracted attention.
- Non-Patent Document 1 a method of mixing silver oxide particles and myristyl alcohol to form a bonding material
- Patent Document 2 a method of adding a carboxylic acid to a mixture of silver carbonate or silver oxide and silver nanoparticles, and bonding material
- voids (hereinafter sometimes referred to as voids) are generated in the joining layer, which not only affects the joining strength of the joined body, but also joins. It was also found that it may affect the reliability of the body.
- the present invention has been made under the above-mentioned circumstances, and the problem to be solved is a bonding that can form a bonded body even under an inert atmosphere such as nitrogen and can suppress the generation of voids. It is to provide a method and a bonding material.
- the present inventors diligently studied to solve the above-described problems.
- the joining material is applied to the joining surface of one member to be joined, and pre-baked, and then on the joining material layer.
- Two bonding members are placed, main firing is performed, and a bonding layer is formed between one bonded member and the second bonded member.
- the present invention was completed with the knowledge that generation can also be suppressed.
- a bonding material composed of at least silver nanoparticles, silver particles, a flux, and a dispersion medium, which is coated with a fatty acid having 8 or less carbon atoms as the silver nanoparticles. If an average particle diameter of 0.5 ⁇ m to 10 ⁇ m is used and an organic substance having two or more carboxyl groups is used as a flux, bonding can be performed at 500 ° C. or lower in an inert atmosphere such as nitrogen. The epoch-making knowledge was acquired and the present invention was completed.
- the first invention according to the present invention is: A joining method for joining a plurality of members to be joined, Applying a bonding material to a bonding surface of one bonded member; A pre-baking step of heating one member to which the bonding material is applied to a predetermined temperature; A step of installing the second member to be bonded on the layer of the bonding material applied to the heated one member to be bonded; One bonded member on which the second bonded member is installed is heated to a temperature higher than the temperature of the preliminary firing step, and a bonding layer is formed between the first bonded member and the second bonded member. And a main firing step.
- the second invention is The bonding material is the bonding method according to the first invention, containing an organic substance having two or more carboxyl groups.
- the third invention is The bonding material is the bonding method according to the first or second invention, wherein the bonding material contains silver nanoparticles having an average primary particle diameter of 1 nm to 200 nm.
- the fourth invention is: In the main firing step, the joining method according to any one of the first to third inventions, wherein a pressure of 20 MPa or less is applied to a joining surface between one joined member and the second joined member.
- the fifth invention is: Silver nanoparticles coated with a fatty acid having 8 or less carbon atoms and having an average primary particle diameter of 1 nm to 200 nm, silver particles having an average particle diameter of 0.5 ⁇ m to 10 ⁇ m, an organic substance having two or more carboxyl groups, A bonding material containing a dispersion medium.
- the sixth invention is:
- the organic material having two or more carboxyl groups is the bonding material according to the fifth invention having an ether bond.
- the seventh invention The bonding material according to the fifth or sixth invention, wherein the organic substance having two or more carboxyl groups is oxydiacetic acid.
- the eighth invention The bonding material according to any one of the fifth to seventh inventions, wherein the silver nanoparticles are coated with a fatty acid having 3 to 6 carbon atoms.
- the ninth invention A joining method for joining a plurality of members to be joined, Applying the bonding material according to any one of the fifth to eighth inventions to a bonding surface of one bonded member; A pre-baking step of heating one member to which the bonding material is applied to a predetermined temperature; Installing a second member to be bonded on the layer of the bonding material applied to the heated one member to be bonded; One bonded member on which the second bonded member is installed is heated to a temperature higher than the temperature of the preliminary firing step, and a bonding layer is formed between the first bonded member and the second bonded member. And a main firing step.
- the tenth invention is The joining method according to any one of the first to fourth and ninth inventions, wherein the main firing step is performed in an inert gas atmosphere.
- An eleventh invention is the bonding method according to any one of the first to fourth, ninth, and tenth inventions, wherein the main firing step is performed at a temperature of 150 ° C. or higher and 500 ° C. or lower.
- the twelfth invention The joining method according to any one of the first to fourth and ninth to eleventh inventions, wherein the heating rate of heating in the main firing step is 0.1 ° C./second or more and 2.0 ° C./second or less. is there.
- the thirteenth invention A joined body in which a plurality of members to be joined are joined by a joining layer, and a void ratio existing in the joining layer is 2.0% or less.
- the bonding material according to the present invention By using the bonding material according to the present invention, it is possible to form a bonded body that exhibits practical bonding strength at 500 ° C. or lower even in an inert atmosphere including nitrogen. In addition, according to the bonding method of the present invention, since voids are suppressed in the formed bonding layer, a bonded body exhibiting reliability and high strength can be obtained.
- the silver nanoparticles, silver particles, flux, and dispersion medium constituting the bonding material according to the present invention will be described in detail, and then the manufacturing of the bonding material (paste) and the formation of the bonded body will be described.
- the silver nanoparticles constituting the bonding material according to the present invention have an average primary particle diameter of 200 nm or less, preferably 1 to 150 nm, more preferably 10 to 100 nm. By using silver nanoparticles having the particle diameter, a bonded body having a strong bonding force can be formed.
- the silver nanoparticles constituting the bonding material according to the present invention have a surface coated with an organic substance that is a protective agent.
- the organic substance is preferably a fatty acid having a total carbon number of 8 or less.
- saturated fatty acids such as octanoic acid (caprylic acid), heptanoic acid (enanthic acid), hexanoic acid (caproic acid), pentanoic acid (valeric acid), butanoic acid (butyric acid), propanoic acid (propionic acid), etc. Can be given.
- dicarboxylic acid examples include oxalic acid, malonic acid, methylmalonic acid, ethylmalonic acid, succinic acid, methylsuccinic acid, ethylsuccinic acid, phenylsuccinic acid, glutaric acid, adipic acid, pimelic acid, and suberic acid.
- unsaturated fatty acids include sorbic acid and maleic acid.
- hexanoic acid, heptanoic acid, adipic acid, sorbic acid, and malonic acid are preferable from the viewpoint of productivity and workability, and silver in a powder form that is appropriately agglomerated by coating the surface of the silver nanoparticles with the fatty acid. Nanoparticles can be obtained.
- the silver nanoparticles whose surface is coated with the fatty acid are in a form that can be easily collected as aggregates while maintaining the form of primary particles as silver nanoparticles.
- the agglomerate has a particle size of at least 2.5 ⁇ m. This can be confirmed from the fact that the agglomerates can be recovered with No5C filter paper (JIS P-3801). That is, when this aggregate (secondary aggregate) is filtered using the above filter paper, the filtrate becomes clear, so the aggregate is considered to have a particle size larger than the aperture of the filter paper. Because it is. Furthermore, a dry powder composed of agglomerates of silver nanoparticles could be obtained by adding a low-temperature (less than 100 ° C.) drying operation to the recovered material.
- the workability at the time of blending is greatly improved in producing the bonding material according to the present invention. Furthermore, it is possible to use silver nanoparticles coated with a plurality of kinds of organic substances, or to use silver nanoparticles having different average primary particle diameters in combination.
- the addition amount of the silver nanoparticles is 10 to 80% by mass, preferably 15 to 75% by mass with respect to the total paste mass.
- the silver nanoparticle which has the said particle diameter can be manufactured by the method of patent 4344001, for example.
- the production method will be briefly described in the order of a liquid preparation step, a temperature raising step, a reaction step, an aging step, a filtration / washing step, and a drying step.
- a reducing liquid in which a reducing substance is dissolved and a raw material liquid in which a metal salt (particularly a silver salt) as a raw material is dissolved are prepared.
- the reducing solution is a homogeneous mixture of a reducing agent, a protective agent, and ammonia water as a stabilizer.
- the reducing agent only needs to be capable of reducing the metal.
- hydrazine hydrate, hydrazine, borohydride alkali salt (NaBH 4 etc.), lithium aluminum hydride (LiAlH 4 ), ascorbic acid, primary amine, secondary amine, tertiary amine etc. are used in combination You can also
- the protective agent is an organic substance that adheres to the surface of the silver particles and inhibits the bonding between the particles as described above, and obtains stable fine silver particles.
- the organic substance is preferably a fatty acid having a total carbon number of 8 or less, but it is particularly preferable to use hexanoic acid or sorbic acid.
- Stabilizer is used for dissolving acid in water, and ammonia water can be used.
- the solvent is preferably a polar solvent, and water or an organic solvent having a polar group can be used. Specific examples include water, alcohol, polyol, glycol ether, 1-methylpyrrolidinone, pyridine, terpineol, butyl carbitol, butyl carbitol acetate, texanol, and phenoxypropanol.
- a specific example of the reducing solution is a mixture of water, hydrazine hydrated aqueous solution, hexanoic acid and aqueous ammonia
- a specific example of the raw material solution is a silver nitrate aqueous solution.
- the temperature of the reducing solution and the raw material solution is raised to the reaction temperature. At this time, it is preferable to heat the reducing solution and the raw material solution in the same manner, since there is an effect of preventing non-uniformity of the reaction during the reaction and the uniformity of the particles can be maintained.
- the temperature raised at this time is in the range of 40 to 80 ° C.
- the obtained slurry is solid-liquid separated by a filtration method.
- the washing step is performed by adding pure water to the cake obtained in the filtration step and filtering the pure water again.
- the nano-order primary fine particles form loose aggregates and settle naturally in the reaction solution, so that they can be easily recovered.
- a dried metal (silver) particle mass is obtained by subjecting the obtained metal (silver) mass to a drying process at 60 to 90 ° C. for 6 to 24 hours.
- the particle diameter of the silver nanoparticles is calculated from a transmission electron microscope (TEM) photograph. Specifically, 2 parts by mass of metal nanoparticles are added to a mixed solution of 96 parts by mass of cyclohexane and 2 parts by mass of oleic acid and dispersed by ultrasonic waves to obtain a dispersion solution. The obtained dispersion solution is dropped on a Cu microgrid with a support film and dried to prepare a TEM sample.
- TEM transmission electron microscope
- microgrid An image obtained by observing particles in a bright field using a transmission electron microscope (JEM-100CXMark-II type, manufactured by JEOL Ltd.) at a accelerating voltage of 100 kV is used for a microgrid, which is a prepared TEM sample, at a magnification of 300, You can shoot at 000 times.
- JEM-100CXMark-II type manufactured by JEOL Ltd.
- the particle diameter can be directly measured with calipers or the like, but can also be calculated by image software.
- the average primary particle size of the silver nanoparticles is calculated by measuring at least 200 particles independently of each other in the TEM photograph and calculating the number average.
- the silver particles constituting the bonding material according to the present invention have an average particle diameter in the range of 0.5 to 10 ⁇ m, preferably 0.5 to 9.0 ⁇ m, more preferably 0.5 to 8.0 ⁇ m. It is. There is no restriction
- As a form of the silver particles various forms such as a spherical shape, a flake shape, a rectangular parallelepiped shape, a cubic shape, and an aggregate shape can be used.
- the combined use of the submicron-order silver particles contributes to the improvement of the bonding strength of the bonding material, and a bonded body with high bonding strength can be obtained.
- the addition amount of the silver particles is 10 to 80% by mass, preferably 15 to 75% by mass with respect to the total paste mass.
- the average primary particle size of the silver particles may be measured by a laser diffraction method. For example, 0.3 g of a sample of silver particles is placed in 50 mL of isopropyl alcohol and dispersed for 5 minutes with an ultrasonic cleaner with an output of 50 W. For the dispersion, the value of D 50 (cumulative 50% by mass particle size) was measured by laser diffraction using a Microtrac particle size distribution analyzer (Honeywell-Nikkiso 9320-X100), and the value was averaged to the average. The particle size may be used.
- the bonding material of the present invention is characterized in that a flux component (sintering acceleration component) made of an organic substance is added.
- the flux component is an organic substance having two or more carboxyl groups. More preferably, it is a dicarboxylic acid further having an ether bond.
- the flux component is preferably decomposed into a simple structure such as carbon dioxide or water. Therefore, it is preferable that the flux component is an organic substance composed of only elements such as carbon, hydrogen, and oxygen, and the decomposition temperature thereof is lower than the set temperature of the heat treatment operation. Specifically, it is 500 ° C. or lower, more preferably 300 ° C. or lower.
- the molecular weight of the flux component is 1000 or less, preferably 500 or less, and more preferably 300 or less.
- the total number of carbon atoms in the structure is at most 15 or less, preferably 10 or less.
- a structure having such a molecular weight and carbon number can be decomposed or volatilized even if the bonding temperature is set at a relatively low temperature.
- the organic substance having two or more carboxyl groups as the flux component include glycolic acid, which is an organic substance having a dicarboxylic acid structure, and oxydiacetic acid (diglycolic acid), which is a dicarboxylic acid having an ether bond. Can do.
- the addition amount of the flux component is 0.01 to 1.0%, preferably 0.02 to 0.7%, and more preferably 0.05 to 0.5% with respect to the total paste mass.
- the dispersion medium constituting the bonding material according to the present invention is preferably a polar solvent having a low vapor pressure from the viewpoint of dispersing silver nanoparticles. At this time, the dispersion medium does not necessarily need to be composed of one kind, and can be used in combination.
- Specific examples include water, alcohol, polyol, glycol ether, 1-methylpyrrolidinone, pyridine, octanediol, terpineol, butyl carbitol, butyl carbitol acetate, texanol, phenoxypropanol, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, ⁇ -Butyrolactone, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, methoxybutyl acetate, methoxypropyl acetate, diethylene glycol monoethyl ether acetate, ethyl lactate, 1-octanol and the like.
- the addition amount of the solvent in the total paste is 1 to 25%, preferably 3 to the total paste mass in consideration of printability and the like. 20%, more preferably 5 to 15%.
- viscosity modifiers include hydrocarbon solvents, various fatty acids, water-soluble resins, aqueous dispersion resins, and inorganic binders.
- naphthenic hydrocarbon solvent oleic acid, acrylic resin, maleic acid resin, fumaric acid resin, high acid value resin of styrene / maleic acid copolymer resin, polyester resin, polyolefin resin, phenoxy resin, polyimide resin, Polyamide resin or vinyl acetate emulsion, acrylic emulsion, synthetic rubber latex, epoxy resin, phenol resin, DAP resin, urethane resin, fluororesin, silicone resin, ethyl cellulose, polyvinyl alcohol, and the like can be added.
- the inorganic binder include silica sol, alumina sol, zirconia sol, and titania sol.
- the total amount of the viscosity modifier additive may have balance with other components, but is 0.2 to 2.0% by mass, preferably 0.3 to 1.5% by mass with respect to the total mass of the paste. More preferably, the content is 0.3 to 1.0% by mass.
- any known method can be adopted as long as it does not involve significant modification of silver nanoparticles and silver particles.
- Specific examples include ultrasonic dispersion, a disper, a three-roll mill, a ball mill, a bead mill, a twin-screw kneader, and a self-revolving stirrer, and these can be used alone or in combination.
- the metallization temperature of the silver nanoparticles described above may vary greatly depending on the type of organic substance, dispersion medium, or additive that covers the surface. Therefore, it is preferable to grasp the thermal properties of the manufactured bonding material in advance by TG measurement or the like.
- the joining material is applied to the surface of the substrate, which is one member to be joined, with a thickness of about 20 ⁇ m to 200 ⁇ m by, for example, a metal mask, dispenser, or screen printing method.
- a metal mask, dispenser or screen printing method.
- the object to be bonded which is a second member to be bonded
- main baking a heat treatment step at high temperature
- the bonding material according to the present invention is metallized even in the main firing at 500 ° C. or lower in an inert atmosphere including nitrogen, but even when the main material is fired in the air as in the conventional manufacturing method. Can be metallized.
- the preliminary bonding to the bonding material applied to the substrate surface is performed under conditions lower than the decomposition temperature of the silver nanoparticles used in the bonding material and the boiling point of the dispersion medium. It is preferable to remove heat bubbles and gas by performing heat treatment as firing.
- the preliminary firing is preferable because void formation in the bonding layer when the bonded body is formed can be suppressed, and as a result, the bonding strength of the bonding layer can be increased.
- the pre-baking temperature is preferably in the range of 50 to 150 ° C., and preferably 50 to 350 ° C. lower than the temperature during the main baking. Further, although the pre-baking time depends on the area to be joined, about 10 minutes is sufficient, and heating for about 30 seconds may be sufficient.
- the preliminary firing described above can suppress the generation of voids in the bonding layer even when applied to not only the bonding material according to the present invention but also the bonding material according to the prior art.
- the object to be bonded is disposed on the upper part of the bonding material coating layer. And in order to form a joined body, it heats up, pressurizing a to-be-joined object to a board
- the pressurizing pressure at this time can be appropriately set depending on the material to be joined. However, considering the influence on the object to be joined and the substrate, it is preferable to set the pressure to 20 MPa or less, preferably 15 MPa or less.
- the temperature at the time of forming the bonding layer in the main firing is preferably 150 ° C to 500 ° C.
- the main firing temperature can also be set as appropriate depending on the type of the bonded product or substrate to be bonded.
- the heating rate in the main firing is 0.1 to 2.0 ° C./second, preferably 0.2 to 1.5 ° C./second. By taking the temperature increase rate, a dense bonding layer can be formed, and a stable bonded body can be obtained.
- Example 1 ⁇ Synthesis of silver nanoparticles> Using a 500 mL beaker, 13.4 g of silver nitrate (manufactured by Toyo Chemical Co., Ltd.) was dissolved in 72.1 g of pure water to prepare a raw material solution.
- the mixture was aged for 30 minutes to form silver nanoparticle aggregates coated with sorbic acid. Then, the liquid in which the silver nanoparticle aggregate was formed was filtered with the filter paper of No5C, and the collect
- the mixture was kneaded for 30 seconds (kneading conditions / Revolution; 1400 rpm, Rotation; 700 rpm) with a kneading defoaming machine (EME V-mini300 type), and then with a three-roll (EXAKApparatebaus 22851 Nordestedt type).
- the bonding material (paste) according to Example 1 was obtained after five passes.
- Tables 1 and 2 show the composition of the bonding material according to Example 1. Note that octanediol has a boiling point of 244 ° C. and a flash point of 135 ° C.
- a metal mask (mask thickness 50 ⁇ m) was prepared, and the joining material (paste) according to Example 1 was applied by a printing method onto a silver-plated copper substrate by manual printing with a metal squeegee.
- the pattern was ⁇ 5.5 mm and 50 ⁇ m thick.
- the copper substrate coated with the bonding material thus obtained was placed in a furnace (flip chip bonder M-90, manufactured by DON-400 Hisol Co., Ltd.) and heated at 100 ° C. for 10 minutes in a nitrogen atmosphere (oxygen concentration: 500 ppm or less). Then, preliminary firing was performed to remove bubbles and gas components in the bonding material.
- the copper substrate on which the bonding material was applied was cooled to 25 ° C., and a chip (a silver-plated Si chip with 5 mm square and 0.3 mm thickness) was mounted on the coated surface.
- the copper substrate on which the chip is mounted is placed in the furnace again, pressurized at 10 MPa, heated to 250 ° C. at a heating rate of 1 ° C./second, and after firing reaches 250 ° C. for 5 minutes. Holding, the joined body according to Example 1 was obtained.
- Measurement of the joining force of the joined body according to Example 1 was performed. Specifically, it was carried out in accordance with the method described in “Lead-free solder test method, part 5 solder joint tensile and shear test method” of JISZ-03918-5: 2003. That is, it is a method of measuring the force when the bonded surface breaks in such a way that the object to be bonded (chip) bonded on the substrate is pushed in the horizontal direction and cannot withstand the pressed force.
- a test was performed using a DAGE bond tester (series 4000). The share height was 50 ⁇ m, the test speed was 5 mm / min, and the measurement was performed at room temperature.
- the bonding strength (average shear strength) between the substrate and the chip in the bonded body according to Example 1 was 64.0 MPa.
- the abundance ratio of voids inside the joined body according to Example 1 was measured by X-ray measurement (X-ray fluoroscopy device SMX-160LT manufactured by Takashimazu Seisakusho). Specifically, using the image analysis software, adjust the brightness range (color range) so that the voids are colored red, and binarize the area of ⁇ 5 mm to make the void area ratio Is calculated. The results are shown in Tables 1 and 2.
- Example 2 Except for changing the addition amount of octanediol, which is a dispersion medium of the bonding material according to Example 1, to 7.95 g and further adding 2.0 g of EXXSOL D130 FLUID (manufactured by ExxonMobil) for the purpose of viscosity adjustment,
- the bonding material according to Example 2 was manufactured through the same manufacturing process as in Example 1. And through the process similar to Example 1, the joined body which concerns on Example 2 was formed, and evaluation similar to Example 1 was performed. The evaluation results are shown in Tables 1 and 2.
- Example 3 Except that the silver powder of the joining material according to Example 1 was changed from spherical silver particles to flake silver particle powder (FA-D-6 manufactured by DOWA Electronics Co., Ltd .: average primary particle diameter (D 50 ) 8.3 ⁇ m).
- the bonding material according to Example 3 was manufactured through the same manufacturing process as in Example 1. And through the process similar to Example 1, the joined_body
- Example 4 From the silver nanoparticle aggregate dried powder coated with sorbic acid (average primary particle size: 100 nm) of the bonding material according to Example 1, the silver nanoparticle aggregate dried powder coated with sorbic acid (average primary particle size: 60 nm), the flux is 0.1 g of oxydiacetic acid (manufactured by Wako Pure Chemical Industries, Ltd .: diglycolic acid), and octanediol (manufactured by Kyowa Hakko Chemical Co., Ltd .: 2-ethyl-1,3-hexanediol) as a dispersion medium
- the joining material which concerns on Example 4 was manufactured through the manufacturing process similar to Example 1 except having changed the addition amount of 9.9g. And through the process similar to Example 1, the joined body which concerns on Example 4 was formed, and evaluation similar to Example 1 was performed. The evaluation results are shown in Tables 1 and 2.
- Example 5 The addition amount of octanediol which is a dispersion medium of the bonding material according to Example 1 was changed to 7.45 g, and 2.0 g of EXXSOL D130 FLUID (manufactured by ExxonMobil) was added for the purpose of adjusting the viscosity.
- a bonding material according to Example 5 was manufactured through the same manufacturing process as Example 1 except that 0.5 g of oleic acid (manufactured by Kishida Chemical Co., Ltd.) was added for the purpose of adjusting the viscosity.
- the joined body which concerns on Example 5 was formed, and evaluation similar to Example 1 was performed. The evaluation results are shown in Tables 1 and 2.
- Example 1 A bonding material according to Example 1 was prepared. Then, without pre-baking before chip mounting, the chip is mounted on a copper substrate coated with a bonding material, pressurized at 10 MPa, heated at 100 ° C. for 10 minutes as preliminary drying, and then heated to 250 ° C. The temperature was increased at a rate of 1 ° C./second, and after the temperature reached 250 ° C. for main baking, the bonded body according to Comparative Example 1 was formed, and the same evaluation as in Example 1 was performed. The evaluation results are shown in Tables 1 and 2.
- Comparative Example 2 Using the bonding material according to Example 2, the bonded body according to Comparative Example 2 was formed through the same process as in Comparative Example 1, and the same evaluation as in Example 1 was performed. The evaluation results are shown in Tables 1 and 2.
- Comparative Example 3 Using the bonding material according to Example 3, the bonded body according to Comparative Example 3 was formed through the same steps as in Comparative Example 1, and the same evaluation as in Example 1 was performed. The evaluation results are shown in Tables 1 and 2.
- FIG. 1 shows the bonding strength of the bonded bodies according to Examples 1 to 3 and Comparative Examples 1 to 3.
- FIG. 1 is a bar graph in which the vertical axis represents the bonding strength (shear strength) and the horizontal axis represents Example 1-Comparative Example 1, Example 2-Comparative Example 2, and Example 3-Comparative Example 3.
- Example 3—Comparative Example 3 use a paste of the same composition as the bonding material. Firing was performed, and in Comparative Examples 1 to 3, preliminary firing before chip mounting was not performed. From FIG. 1, the joined bodies according to Examples 1 to 3 that were pre-fired before chip mounting were joined to 2.3 to 6.2 than the joined bodies according to Comparative Examples 1 to 3 that were not pre-fired. It has been found that it exhibits strength.
- a bonding material and a bonding body, and a bonding method according to the present invention include a non-insulated semiconductor device, application to a bare chip mounting assembly technology, a power device (IGBT, rectifier diode, power transistor, power MOSFET, insulated gate bipolar transistor, thyristor, It can be applied to gate turn-off thyristors and triacs, and can also be applied to bonding materials on glass whose surface is chrome-treated, and can also be applied to bonding materials for electrodes and frames of lighting devices using LEDs. It is.
- IGBT rectifier diode
- power transistor power MOSFET
- insulated gate bipolar transistor thyristor
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Abstract
Description
複数の被接合部材を接合する接合方法であって、
一の被接合部材の接合面へ接合材料を塗布する工程と、
接合材料を塗布された一の被接合部材を、所定の温度に加熱する予備焼成工程と、
加熱された一の被接合部材に塗布された接合材料の層上へ、二の被接合部材を設置する工程と、
二の被接合部材が設置された一の被接合部材を、前記予備焼成工程の温度より高い温度に加熱して、一の被接合部材と二の被接合部材との間に接合層を形成する本焼成工程とを有する接合方法である。
前記接合材料は、2以上のカルボキシル基を有する有機物質を含有する第1の発明に記載の接合方法である。
前記接合材料は、少なくとも平均一次粒子径が1nm以上200nm以下の銀ナノ粒子を含有する、第1または第2の発明に記載の接合方法である。
前記本焼成工程において、一の被接合部材と二の被接合部材との接合面へ20MPa以下の加圧を行なう第1ないし第3の発明のいずれかに記載の接合方法である。
炭素数8以下の脂肪酸で被覆され平均一次粒子径が1nm以上200nm以下の銀ナノ粒子と、平均粒子径が0.5μm以上10μm以下の銀粒子と、2以上のカルボキシル基を有する有機物質と、分散媒とを含む接合材料である。
前記2以上のカルボキシル基を有する有機物質が、エーテル結合を有する第5の発明に記載の接合材料である。
前記2以上のカルボキシル基を有する有機物質が、オキシジ酢酸である第5または第6の発明に記載の接合材料である。
前記銀ナノ粒子が、炭素数3以上6以下の脂肪酸で被覆されている第5ないし第7の発明のいずれかに記載の接合材料である。
複数の被接合部材を接合する接合方法であって、
一の被接合部材の接合面へ第5ないし第8の発明のいずれかに記載の接合材料を塗布する工程と、
前記接合材料を塗布された一の被接合部材を、所定の温度に加熱する予備焼成工程と、
加熱された一の被接合部材に塗布された前記接合材料の層上へ、二の被接合部材を設置する工程と、
二の被接合部材が設置された一の被接合部材を、前記予備焼成工程の温度より高い温度に加熱して、一の被接合部材と二の被接合部材との間に接合層を形成する本焼成工程とを有する接合方法である。
前記本焼成工程を不活性ガス雰囲気下で行う第1ないし第4、第9の発明のいずれかに記載の接合方法である。
前記本焼成工程を150℃以上500℃以下の温度で行う第1ないし第4、第9または第10の発明のいずれかに記載の接合方法である。
前記本焼成工程における加熱の昇温速度を、0.1℃/秒以上2.0℃/秒以下で行う第1ないし第4、第9ないし第11の発明のいずれかに記載の接合方法である。
複数の被接合部材が接合層により接合された接合体であって、当該接合層に存在するボイド率が2.0%以下である接合体である。
本発明に係る接合材料を構成する銀ナノ粒子は、平均一次粒子径が200nm以下、好ましくは1~150nm、一層好ましくは10~100nmのものである。当該粒子径を有する銀ナノ粒子を使用することで、強い接合力を有した接合体を形成することができる。
還元性を有する物質を溶解させた還元液と、原料である金属塩(特に銀塩)が溶解された原料液とを準備する。
還元液と原料液とを昇温し、反応温度まで上昇させる。このとき、還元液と原料液とを、同様に加熱しておけば、反応時において反応の不均一が防止される効果があり、粒子の均一性を保つことができるので好ましい。このときに昇温させる温度は40~80℃の範囲である。
還元液と原料液とが目的温度まで上昇したら、還元液に対して原料液を添加する。添加は突沸に注意した上で、一挙に添加することが好ましい。
還元液と原料液とを混合した後、10~30分間程度攪拌を続け、粒子の成長を完結させる。
得られたスラリーは濾過法により固液分離する。洗浄工程は、当該濾過工程で得られたケーキに対して純水を加え、再び該純水を濾過することによって行う。本発明の製造法によれば、ナノオーダーの一次微粒子が緩やかな凝集体を形成し、反応液中に自然に沈降するため、容易に回収できる。
得られた金属(銀)塊へ60~90℃、6~24時間の乾燥工程を施すことで、乾燥した金属(銀)粒子塊が得られる。
銀ナノ粒子の粒子径は、透過型電子顕微鏡(TEM)写真から算出される。
具体的には、金属ナノ粒子2質量部を、シクロヘキサン96質量部とオレイン酸2質量部との混合溶液に添加し、超音波によって分散させて分散溶液を得る。得られた分散溶液を、支持膜付きCuマイクログリッドに滴下し、乾燥させることでTEM試料を作成する。作成したTEM試料であるマイクログリッドを、透過型電子顕微鏡(日本電子株式会社製JEM-100CXMark-II型)を用い、100kVの加速電圧にて、明視野で粒子を観察した像を、倍率300,000倍で撮影すれば良い。
本発明に係る接合材料を構成する銀粒子は、平均粒子径の範囲が0.5~10μm、好ましくは0.5~9.0μm、一層好ましくは0.5~8.0μmの範囲の銀粒子である。銀粒子の形態については、特に制限はない。銀粒子の形態としては、球状、フレーク(鱗片)状、直方体状、立方体状、凝集体状といった様々な形態が使用できる。
本発明の接合材料は、有機物からなるフラックス成分(焼結促進成分)を添加することを特徴とする。ここでフラックス成分とは、具体的に述べれば、2以上のカルボキシル基を有する有機物質である。より好ましくは、さらにエーテル結合を有するジカルボン酸である。接合材料へ当該構成を有するフラックス成分を添加することにより、窒素を初めとした不活性雰囲気下における500℃以下の熱処理操作であっても、上述した有機物質で被覆された銀ナノ粒子を、バルク態の銀に変化させることが出来る。
本発明に係る接合材料を構成する分散媒は、銀ナノ粒子を分散させる観点から蒸気圧が低い極性溶媒とすることが好ましい。なお、この時分散媒は必ずしも一種類で構成する必要はなく、併用混合することも出来る。
上述した分散媒へ、銀ナノ粒子の焼結温度低下や密着の促進を図る添加剤や、粘度調整剤を添加することも好ましい構成である。
粘度調整剤の例としては、炭化水素溶剤、各種の脂肪酸、水溶化樹脂、水性分散樹脂、および無機バインダーがある。具体的には、ナフテン系炭化水素溶剤、オレイン酸、アクリル樹脂、マレイン酸樹脂、フマル酸樹脂、スチレン・マレイン酸共重合樹脂の高酸価樹脂、ポリエステル樹脂、ポリオレフィン樹脂、フェノキシ樹脂、ポリイミド樹脂、ポリアミド樹脂あるいは酢酸ビニル系エマルション、アクリルエマルション、合成ゴムラテックス、エポキシ樹脂、フェノール樹脂、DAP樹脂、ウレタン樹脂、フッ素樹脂、シリコーン樹脂、エチルセルロースおよびポリビニルアルコール等を添加することができる。無機バインダーの例としては、シリカゾル、アルミナゾル、ジルコニアゾル、チタニアゾルといったものを挙げることが出来る。
尤も、こうした粘度調整剤は、焼結性を改善する観点から添加量が少ない方が好ましい。そこで、当該粘度調整剤の添加剤の総量は、他成分との兼ね合いもあるが、ペーストの総質量に対して0.2~2.0質量%、好ましくは0.3~1.5質量%、一層好ましくは0.3~1.0質量%とするのがよい。
本発明に係る接合材料の製造方法について説明する。当該混合物を混練脱泡機へ導入して混練し混練物を形成させる。その後、当該混練物へ機械的分散処理を行い本発明に係る接合材料を得る。
接合体の形成は、接合部が形成される一の被接合部材である基板表面へ、例えばメタルマスク、ディスペンサーまたはスクリーン印刷法により、20μm~200μm程度の厚みで接合材料を塗布する。塗布後、低温による熱処理(以降、予備焼成という)を経た後、二の被接合部材である被接合物を貼付し、高温による熱処理工程(以降は、本焼成という。)により接合材料を金属化する。
<銀ナノ粒子の合成>
500mLビーカーを用い、硝酸銀(東洋化学株式会社製)13.4gを純水72.1gへ溶解させて原料液を調製した。
得られたソルビン酸が被覆された銀ナノ粒子凝集体乾燥粉(平均一次粒子径:100nm)45.0g(全銀中の割合は50.00質量%)を銀ナノ粒子粉とし、球状銀粒子の粉末(DOWAエレクトロニクス株式会社製 2-1C球状銀粉末:平均一次粒子径(D50)1.0μm)45.0g(全銀中の割合は50.00質量%)と、フラックスとしてオキシジ酢酸(和光純薬株式会社製:ジグリコール酸)0.05gと、分散媒としてオクタンジオール(協和発酵ケミカル社製:2-エチル-1,3-ヘキサンジオール)9.95gとを、混合し、混合物とした。
尚、オクタンジオールの沸点は244℃であり、引火点は135℃である。
メタルマスク(マスク厚50μmt)を準備し、銀めっきされた銅基板上にメタルスキージによる手印刷で、実施例1に係る接合材料(ペースト)を印刷法により塗布した。パターンは□5.5mm、50μm厚とした。
実施例1に係る接合材料の分散媒であるオクタンジオールの添加量を7.95gに変更し、さらに、粘度調整を目的としてEXXSOL D130 FLUID(エクソンモービル社製)を2.0g添加した以外は、実施例1と同様の製造工程を経て、実施例2に係る接合材料を製造した。そして、実施例1と同様の工程を経て、実施例2に係る接合体を形成し、実施例1と同様の評価を行った。評価結果を表1、2に示す。
実施例1に係る接合材料の銀粉を球状銀粒子から、フレーク銀粒子粉末(DOWAエレクトロニクス株式会社製FA-D-6:平均一次粒子径(D50)8.3μm)へ変更した以外は、実施例1と同様の製造工程を経て、実施例3に係る接合材料を製造した。そして、実施例1と同様の工程を経て、実施例3に係る接合体を形成し、実施例1と同様の評価を行った。評価結果を表1、2に示す。
実施例1に係る接合材料のソルビン酸が被覆された銀ナノ粒子凝集体乾燥粉(平均一次粒子径:100nm)から、ソルビン酸が被覆された銀ナノ粒子凝集体乾燥粉(平均一次粒子径:60nm)へ変更し、フラックスをオキシジ酢酸(和光純薬株式会社製:ジグリコール酸)0.1g、分散媒としてオクタンジオール(協和発酵ケミカル株式会社製:2-エチル-1,3-ヘキサンジオール)の添加量を9.9gと変更した以外は、実施例1と同様の製造工程を経て、実施例4に係る接合材料を製造した。そして、実施例1と同様の工程を経て、実施例4に係る接合体を形成し、実施例1と同様の評価を行った。評価結果を表1、2に示す。
実施例1に係る接合材料の分散媒であるオクタンジオールの添加量を7.45gに変更し、さらに、粘度調整を目的としてEXXSOL D130 FLUID(エクソンモービル社製)を2.0g添加し、さらに、粘度調整を目的としてオレイン酸(キシダ化学株式会社製)を0.5g添加した以外は、実施例1と同様の製造工程を経て、実施例5に係る接合材料を製造した。そして、実施例1と同様の工程を経て、実施例5に係る接合体を形成し、実施例1と同様の評価を行った。評価結果を表1、2に示す。
実施例1に係る接合材料を準備した。
そして、チップマウント前の予備焼成を実施せず、接合材料が塗布された銅基板にチップをマウントし、10MPaの加圧を施して、予備乾燥として100℃10分間加熱後、250℃まで昇温速度1℃/秒で昇温し、本焼成として250℃に達してから5分間保持することで、比較例1に係る接合体を形成し、実施例1と同様の評価を行った。評価結果を表1、2に示す。
実施例2に係る接合材料を用い、比較例1と同様の工程を経て、比較例2に係る接合体を形成し、実施例1と同様の評価を行った。評価結果を表1、2に示す。
実施例3に係る接合材料を用い、比較例1と同様の工程を経て、比較例3に係る接合体を形成し、実施例1と同様の評価を行った。評価結果を表1、2に示す。
図1に、実施例1~3および比較例1~3に係る接合体の接合強度を示す。図1は縦軸に接合強度(シェア強度)をとり、横軸に、実施例1-比較例1、実施例2-比較例2、実施例3-比較例3をとった棒グラフである。
実施例1-比較例1と、実施例2-比較例2と、実施例3-比較例3とは、接合材料として同組成のペーストを用い、実施例1~3においてはチップマウント前の予備焼成を実施し、比較例1~3においてはチップマウント前の予備焼成を実施しなかったものである。
図1より、チップマウント前の予備焼成を実施した実施例1~3に係る接合体は、予備焼成を実施しなかった比較例1~3に係る接合体より2.3~6.2の接合強度を発揮することが判明した。
Claims (13)
- 複数の被接合部材を接合する接合方法であって、
一の被接合部材の接合面へ接合材料を塗布する工程と、
接合材料を塗布された一の被接合部材を、所定の温度に加熱する予備焼成工程と、
加熱された一の被接合部材に塗布された接合材料の層上へ、二の被接合部材を設置する工程と、
二の被接合部材が設置された一の被接合部材を、前記予備焼成工程の温度より高い温度に加熱して、一の被接合部材と二の被接合部材との間に接合層を形成する本焼成工程とを有する接合方法。 - 前記接合材料は、2以上のカルボキシル基を有する有機物質を含有する請求項1に記載の接合方法。
- 前記接合材料は、少なくとも平均一次粒子径が1nm以上200nm以下の銀ナノ粒子を含有する、請求項1または2に記載の接合方法。
- 前記本焼成工程において、一の被接合部材と二の被接合部材との接合面へ20MPa以下の加圧を行なう請求項1ないし3のいずれかに記載の接合方法。
- 炭素数8以下の脂肪酸で被覆され平均一次粒子径が1nm以上200nm以下の銀ナノ粒子と、平均粒子径が0.5μm以上10μm以下の銀粒子と、2以上のカルボキシル基を有する有機物質と、分散媒とを含む接合材料。
- 前記2以上のカルボキシル基を有する有機物質が、エーテル結合を有する請求項5に記載の接合材料。
- 前記2以上のカルボキシル基を有する有機物質が、オキシジ酢酸である請求項5または6に記載の接合材料。
- 前記銀ナノ粒子が、炭素数3以上6以下の脂肪酸で被覆されている請求項5ないし7のいずれかに記載の接合材料。
- 複数の被接合部材を接合する接合方法であって、
一の被接合部材の接合面へ請求項5ないし8のいずれかに記載の接合材料を塗布する工程と、
前記接合材料を塗布された一の被接合部材を、所定の温度に加熱する予備焼成工程と、
加熱された一の被接合部材に塗布された前記接合材料の層上へ、二の被接合部材を設置する工程と、
二の被接合部材が設置された一の被接合部材を、前記予備焼成工程の温度より高い温度に加熱して、一の被接合部材と二の被接合部材との間に接合層を形成する本焼成工程とを有する接合方法。 - 前記本焼成工程を不活性ガス雰囲気下で行う請求項1ないし4、9のいずれかに記載の接合方法。
- 前記本焼成工程を150℃以上500℃以下の温度で行う請求項1ないし4、9または10のいずれかに記載の接合方法。
- 前記本焼成工程における加熱の昇温速度を、0.1℃/秒以上2.0℃/秒以下で行う請求項1ないし4、9ないし11のいずれかに記載の接合方法。
- 複数の被接合部材が接合層により接合された接合体であって、当該接合層に存在するボイド率が2.0%以下である接合体。
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---|---|---|---|---|
JP2013041683A (ja) * | 2011-08-11 | 2013-02-28 | Tamura Seisakusho Co Ltd | 導電性材料 |
JP2014235942A (ja) * | 2013-06-04 | 2014-12-15 | Dowaエレクトロニクス株式会社 | 接合材およびその接合材を用いて電子部品を接合する方法 |
WO2014204013A1 (ja) * | 2013-06-21 | 2014-12-24 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
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JP2018109232A (ja) * | 2016-12-28 | 2018-07-12 | Dowaエレクトロニクス株式会社 | 接合材及びそれを用いた接合方法 |
TWI655693B (zh) * | 2017-02-28 | 2019-04-01 | 日商京瓷股份有限公司 | 半導體裝置之製造方法 |
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US10730150B2 (en) * | 2017-08-07 | 2020-08-04 | Honeywell International Inc. | Flowable brazing compositions and methods of brazing metal articles together using the same |
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JP6958434B2 (ja) * | 2018-03-06 | 2021-11-02 | 三菱マテリアル株式会社 | 金属粒子凝集体及びその製造方法並びにペースト状金属粒子凝集体組成物及びこれを用いた接合体の製造方法 |
JP6869275B2 (ja) * | 2019-01-11 | 2021-05-12 | Jx金属株式会社 | 導電性塗布材料 |
JP6869274B2 (ja) * | 2019-01-11 | 2021-05-12 | Jx金属株式会社 | 導電性塗布材料 |
US11515281B2 (en) | 2019-04-22 | 2022-11-29 | Panasonic Holdings Corporation | Bonded structure and bonding material |
JP7443948B2 (ja) * | 2020-06-15 | 2024-03-06 | Jsr株式会社 | 組成物、銀焼結物の形成方法、接合方法、物品及び物品の製造方法 |
CN117334655B (zh) * | 2023-09-30 | 2024-05-31 | 江苏富乐华功率半导体研究院有限公司 | 一种应用银烧结焊片的低孔隙率界面结构及制备方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002126869A (ja) * | 2000-10-25 | 2002-05-08 | Harima Chem Inc | 金属間のロウ付け接合方法 |
JP2002334618A (ja) * | 2001-05-07 | 2002-11-22 | Harima Chem Inc | 金属微粒子分散液を用いたメッキ代替導電性金属皮膜の形成方法 |
JP4344001B2 (ja) | 2007-10-24 | 2009-10-14 | Dowaエレクトロニクス株式会社 | 微小銀粒子含有組成物、その製造方法、微小銀粒子の製造方法および微小銀粒子を有するペースト |
JP2009267374A (ja) | 2008-03-31 | 2009-11-12 | Hitachi Ltd | 半導体装置及び接合材料 |
JP2009279649A (ja) | 2008-04-23 | 2009-12-03 | Toyota Motor Corp | 接合材料及び接合材料の成分算出方法 |
WO2009157309A1 (ja) * | 2008-06-26 | 2009-12-30 | Dic株式会社 | 銀含有粉体とその製法、これを用いる導電性ペーストとプラスチック基板 |
JP2010053377A (ja) * | 2008-08-26 | 2010-03-11 | Nippon Handa Kk | 金属製部材の接合方法および金属製部材接合体の製造方法 |
JP2010077266A (ja) * | 2008-09-25 | 2010-04-08 | Panasonic Electric Works Co Ltd | 熱硬化性樹脂組成物及び回路基板 |
JP2010153118A (ja) * | 2008-12-24 | 2010-07-08 | Mitsuboshi Belting Ltd | 金属粒子ペースト及び導電性基材の製造方法 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5841197A (en) * | 1994-11-18 | 1998-11-24 | Adamic, Jr.; Fred W. | Inverted dielectric isolation process |
JPH08164494A (ja) * | 1994-12-10 | 1996-06-25 | Kokusai Electric Co Ltd | ろうペースト及びこれを用いた溶接方法 |
JPH10162647A (ja) * | 1996-11-28 | 1998-06-19 | Asahi Chem Ind Co Ltd | 導電性ペースト |
JP3435006B2 (ja) * | 1997-02-27 | 2003-08-11 | 京セラ株式会社 | 半導体素子収納用パッケージの製造方法 |
JP2001105180A (ja) * | 1999-10-05 | 2001-04-17 | Showa Denko Kk | はんだ付けフラックス |
JP4223648B2 (ja) * | 1999-12-02 | 2009-02-12 | 昭和電工株式会社 | はんだ付けフラックス |
AU4164999A (en) * | 1998-06-10 | 1999-12-30 | Showa Denko Kabushiki Kaisha | Solder powder, flux, solder paste, method for soldering, soldered circuit board and soldered junction product |
US20020046627A1 (en) * | 1998-06-10 | 2002-04-25 | Hitoshi Amita | Solder powder, flux, solder paste, soldering method, soldered circuit board, and soldered joint product |
JP3316464B2 (ja) * | 1998-12-28 | 2002-08-19 | 株式会社中村自工 | ブレージングペースト |
JP2001085828A (ja) * | 1999-09-13 | 2001-03-30 | Suzuka Fuji Xerox Co Ltd | 部分はんだ付けプロセスおよびシステム |
JP4748292B2 (ja) * | 2000-03-15 | 2011-08-17 | 信越化学工業株式会社 | フィルム状電子部品用接着剤及び電子部品 |
US6645632B2 (en) * | 2000-03-15 | 2003-11-11 | Shin-Etsu Chemical Co., Ltd. | Film-type adhesive for electronic components, and electronic components bonded therewith |
JP2002001520A (ja) * | 2000-06-16 | 2002-01-08 | Uchihashi Estec Co Ltd | はんだ付け方法及びはんだ付け構造 |
JP2004082667A (ja) * | 2002-08-29 | 2004-03-18 | Yoshizawa Kk | 複合鉛板及びその製造方法 |
JP2004107728A (ja) * | 2002-09-18 | 2004-04-08 | Ebara Corp | 接合材料及び接合方法 |
WO2007010902A1 (ja) * | 2005-07-20 | 2007-01-25 | Hitachi Chemical Co., Ltd. | 半導体用熱可塑性樹脂組成物、これを用いた接着フィルム、リードフレーム、半導体装置および半導体装置の製造方法 |
US20070090170A1 (en) * | 2005-10-20 | 2007-04-26 | Endicott Interconnect Technologies, Inc. | Method of making a circuitized substrate having a plurality of solder connection sites thereon |
JP2007227493A (ja) * | 2006-02-22 | 2007-09-06 | Mitsubishi Materials Corp | 金錫合金ハンダペーストを用いたハンダ付け方法 |
JP4638382B2 (ja) * | 2006-06-05 | 2011-02-23 | 田中貴金属工業株式会社 | 接合方法 |
JP4963393B2 (ja) * | 2006-10-03 | 2012-06-27 | 三ツ星ベルト株式会社 | 低温焼成型銀ペースト |
JP4872663B2 (ja) * | 2006-12-28 | 2012-02-08 | 株式会社日立製作所 | 接合用材料及び接合方法 |
JP5238215B2 (ja) * | 2007-10-19 | 2013-07-17 | 三菱製紙株式会社 | 導電性発現方法および導電性部材 |
CN101878509B (zh) * | 2007-11-28 | 2012-08-29 | 松下电器产业株式会社 | 导电糊及使用该导电糊的电气电子设备 |
WO2009116136A1 (ja) * | 2008-03-18 | 2009-09-24 | 株式会社応用ナノ粒子研究所 | 複合銀ナノペースト、その製法及びナノペースト接合方法 |
JP4936192B2 (ja) * | 2008-03-31 | 2012-05-23 | パナソニック株式会社 | 熱硬化性樹脂組成物及びその製造方法 |
JP5033047B2 (ja) * | 2008-04-24 | 2012-09-26 | パナソニック株式会社 | 熱硬化性樹脂組成物及びその製造方法 |
JP5475976B2 (ja) * | 2008-09-25 | 2014-04-16 | パナソニック株式会社 | 熱硬化性樹脂組成物及びその製造方法並びに回路基板 |
JP4893720B2 (ja) * | 2008-09-25 | 2012-03-07 | パナソニック電工株式会社 | 熱硬化性樹脂組成物及びその製造方法 |
JP5268717B2 (ja) * | 2009-03-10 | 2013-08-21 | 日本発條株式会社 | 大気接合用ろう材及び接合体 |
JP5611537B2 (ja) * | 2009-04-28 | 2014-10-22 | 日立化成株式会社 | 導電性接合材料、それを用いた接合方法、並びにそれによって接合された半導体装置 |
KR101623449B1 (ko) * | 2009-07-14 | 2016-05-23 | 도와 일렉트로닉스 가부시키가이샤 | 금속 나노 입자를 이용한 접합재 및 접합 방법 |
JP5620122B2 (ja) * | 2010-02-24 | 2014-11-05 | 地方独立行政法人 大阪市立工業研究所 | 接合用材料及び接合方法 |
JP4928639B2 (ja) * | 2010-03-15 | 2012-05-09 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
KR101664991B1 (ko) * | 2010-03-15 | 2016-10-11 | 도와 일렉트로닉스 가부시키가이샤 | 접합재 및 이것을 이용한 접합방법 |
JP2011243721A (ja) * | 2010-05-18 | 2011-12-01 | Dainippon Printing Co Ltd | 太陽電池用集電電極、太陽電池及びその製造方法 |
WO2011155055A1 (ja) * | 2010-06-11 | 2011-12-15 | Dowaエレクトロニクス株式会社 | 低温焼結性接合材および該接合材を用いた接合方法 |
-
2011
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-
2015
- 2015-07-23 JP JP2015146197A patent/JP6214600B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002126869A (ja) * | 2000-10-25 | 2002-05-08 | Harima Chem Inc | 金属間のロウ付け接合方法 |
JP2002334618A (ja) * | 2001-05-07 | 2002-11-22 | Harima Chem Inc | 金属微粒子分散液を用いたメッキ代替導電性金属皮膜の形成方法 |
JP4344001B2 (ja) | 2007-10-24 | 2009-10-14 | Dowaエレクトロニクス株式会社 | 微小銀粒子含有組成物、その製造方法、微小銀粒子の製造方法および微小銀粒子を有するペースト |
JP2009267374A (ja) | 2008-03-31 | 2009-11-12 | Hitachi Ltd | 半導体装置及び接合材料 |
JP2009279649A (ja) | 2008-04-23 | 2009-12-03 | Toyota Motor Corp | 接合材料及び接合材料の成分算出方法 |
WO2009157309A1 (ja) * | 2008-06-26 | 2009-12-30 | Dic株式会社 | 銀含有粉体とその製法、これを用いる導電性ペーストとプラスチック基板 |
JP2010053377A (ja) * | 2008-08-26 | 2010-03-11 | Nippon Handa Kk | 金属製部材の接合方法および金属製部材接合体の製造方法 |
JP2010077266A (ja) * | 2008-09-25 | 2010-04-08 | Panasonic Electric Works Co Ltd | 熱硬化性樹脂組成物及び回路基板 |
JP2010153118A (ja) * | 2008-12-24 | 2010-07-08 | Mitsuboshi Belting Ltd | 金属粒子ペースト及び導電性基材の製造方法 |
Non-Patent Citations (2)
Title |
---|
MORITA ET AL.: "Development of a lead-free bonding technique for high temperature environment using silver oxide particles of micrometer size", MATERIA, vol. 491, 2010 |
See also references of EP2645408A4 |
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EP2891159A4 (en) * | 2012-07-30 | 2016-03-16 | Henkel US IP LLC | SILVER FRITTAGE COMPOSITION WITH METAL ADHESION FLUID OR REDUCTION AGENTS |
JP2014235942A (ja) * | 2013-06-04 | 2014-12-15 | Dowaエレクトロニクス株式会社 | 接合材およびその接合材を用いて電子部品を接合する方法 |
TWI636842B (zh) * | 2013-06-21 | 2018-10-01 | 日商同和電子科技有限公司 | 接合材及使用其之接合方法 |
WO2014204013A1 (ja) * | 2013-06-21 | 2014-12-24 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
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US10328534B2 (en) | 2013-06-21 | 2019-06-25 | Dowa Electronics Materials Co., Ltd. | Bonding material and bonding method using same |
JP2015225842A (ja) * | 2014-05-30 | 2015-12-14 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
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US10903185B2 (en) | 2014-05-30 | 2021-01-26 | Dowa Electronics Materials Co., Ltd. | Bonding material and bonding method using same |
JP2016189455A (ja) * | 2015-03-27 | 2016-11-04 | 国立大学法人大阪大学 | 半導体装置 |
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JP2019056158A (ja) * | 2017-09-22 | 2019-04-11 | 日亜化学工業株式会社 | 電子部品の接合方法および接合体の製造方法 |
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JP7155654B2 (ja) | 2018-06-22 | 2022-10-19 | 三菱マテリアル株式会社 | 接合体の製造方法 |
Also Published As
Publication number | Publication date |
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JP2016000861A (ja) | 2016-01-07 |
JP5986929B2 (ja) | 2016-09-06 |
CN103250236A (zh) | 2013-08-14 |
JPWO2012070262A1 (ja) | 2014-05-19 |
EP2645408A1 (en) | 2013-10-02 |
KR102158290B1 (ko) | 2020-09-21 |
KR102188054B1 (ko) | 2020-12-07 |
JP6214600B2 (ja) | 2017-10-18 |
US9486879B2 (en) | 2016-11-08 |
US20130323529A1 (en) | 2013-12-05 |
KR20200067952A (ko) | 2020-06-12 |
KR20130129392A (ko) | 2013-11-28 |
EP2645408A4 (en) | 2016-06-08 |
CN103250236B (zh) | 2016-09-14 |
EP2645408B1 (en) | 2019-02-27 |
HUE043602T2 (hu) | 2019-08-28 |
KR20180004853A (ko) | 2018-01-12 |
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