Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/002—Details
  • H01G4/018—Dielectrics
  • H01G4/06—Solid dielectrics
  • H01G4/08—Inorganic dielectrics
  • H01G4/12—Ceramic dielectrics
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
  • H01G2/02—Mountings
  • H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
  • H01G2/065—Mountings specially adapted for mounting on a printed-circuit support for surface mounting, e.g. chip capacitors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/002—Details
  • H01G4/228—Terminals
  • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/30—Stacked capacitors
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
  • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
  • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
  • H05K3/341—Surface mounted components
  • H05K3/3421—Leaded components
  • H05K3/3426—Leaded components characterised by the leads

Definitions

• the present invention is related to the use of non-ferrous alloys as lead frame materials in Multi-Layer Ceramic Capacitors.
• the need to increase the electrical performance, mechanical robustness, and improve the efficiencies of each component becomes more critical.
• the performance and efficiencies of capacitors is no less important than many of the more active devices.
• Multi-Layer Ceramic Capacitors which are the focus of this invention, are under significant pressure to minimize size due to their widespread use and superior performance when compared to many other types of capacitor.
• Equation 1 The relationship between capacitance, electrode overlap and active thickness is given in Equation 1.
• C G 0 G r A N / t
• G r dielectric permittivity;
• A overlap area of active electrodes (m 2 );
• N number of actives
• t Active thickness (m).
• Equation 1 It can be seen from Equation 1 that for any given dielectric, with a characteristic dielectric permittivity, capacitance can be raised by increasing the area (A), reducing the active thickness (t), increasing the number of layers (N) or some combination thereof.
• Increasing the overlap area of the capacitor can generally be achieved by increasing the length and width of the capacitor which necessarily increases the pad size area required to mount the capacitor. This is contrary to efforts related to miniaturization.
• Low ESR and low ESL are desirable because under an electrical load the conversion of electrical energy to heat is minimized resulting in the lowest power loss.
• the dielectric material is an important factor.
• Ferroelectric class 2 materials such as X7R and X5R (EIA designation) have high dielectric constants and contain domains that move when an AC voltage is applied. This results in domain wall heat loss and is an additional source of concern compared to class 1 COG dielectrics that are paraelectric with no domains.
• the class 1 type materials have far lower dielectric constants so for many applications the designer must use a class 2 dielectric to achieve the desired capacitance.
• Ceramic capacitors are one type of many capacitor designs available to designers.
• One physical property of ceramic capacitors is that they are extremely strong when subjected to compressive stresses but relatively weak under tensile loading. This becomes an important physical trait that designers must contend with when capacitors are attached to non rigid substrates such as typical laminate circuit boards made from a composite of fiberglass and epoxy, commonly known in the industry as FR-4, G-10, and CEM 1-4 series, etc.
• non rigid substrates such as typical laminate circuit boards made from a composite of fiberglass and epoxy, commonly known in the industry as FR-4, G-10, and CEM 1-4 series, etc.
• leads to the capacitor that actually absorb the flexure of the substrate thus minimizing the tensile stresses induced to the body of the ceramic capacitor.
• These leads are made from a conductive material with surface finishes that are compatible with the capacitor's terminations and the material used to attach the lead to the capacitor terminations generally referred to in the industry as solder, which can be of a Sn/Pb based alloy, or Lead (Pb) free solders, such as the Sn/Ag/Cu(SAC) alloys, or other alloys that provide acceptable processing for lead attach processes.
• Ni/Fe alloys offer favorable mechanical properties their magnetic properties as well as low electrical conductivity are inherent electrical disadvantages. Both the lower conductivity and magnetic properties of the materials are detrimental to optimization of capacitor performance. [0014] As realized from the foregoing there has been an ever increasing need to improve capacitor performance. Such an improvement is provided herein.
• a particular advantage of the present invention is the ability to provide more capacitance, with overall improved electrical characteristics, without an increase in the area required for mounting the capacitor. [0018] These and other advantages, as will be realized, are provided in a multi- layered ceramic capacitor.
• the capacitor has at least one chip with first base metal plates in a parallel spaced apart relationship and second base metal plates in a parallel spaced apart relationship wherein the first plates and second plates are interleaved.
• a dielectric is between the first base metal plates and said second base metal plates
• a first termination is in electrical contact with the first plates and a second termination is in electrical contact with the second plates form a mult-layered ceramic capacitor having a first coefficient of thermal expansion.
• Lead frames are attached to, and in electrical contact with, the terminations wherein the lead frames have a second coefficient of thermal expansion and the second coefficient of thermal expansion is higher than said first coefficient of thermal expansion.
• the lead frame is a non-ferrous material.
• Fig. 1 is a partial cut-away side schematic view of a leaded MLCC capacitor.
• Fig. 1A is a perspective schematic view of a leaded MLCC capacitor.
• Fig. 1 B is a perspective schematic view of an embodiment of the invention.
• Fig. 1 C is a side schematic view of an embodiment of the invention.
• Fig. 1 D is a side schematic view of an embodiment of the invention.
• Fig. 2 graphically illustrates board flexure data.
• Fig. 3 graphically illustrates board flexure data.
• Fig. 4 graphically illustrates ESL results.
• Fig. 5 graphically illustrates ESR results.
• Fig. 6 graphically illustrates temperature results as a function of current.
• Figs 7a-7i graphically illustrate reliability test results for a 2-chip, 22 ⁇ F, 50V rated capacitor of this invention.
• Fig. 8 is a schematic perspective view of a chip stack of the invention.
• Fig. 9 is a schematic perspective view of a chip stack of the invention.
• Fig. 10 is a schematic perspective view of an embodiment of the invention demonstrating leaded through hole.
• Fig. 11 is a schematic perspective view of an embodiment of the invention demonstrating leaded surface mount. DETAILED DESCRIPTION OF THE INVENTION
• the present invention is related to an improvement in MLCC's and, particularly, leaded base metal electrode (BME) MLCC's. More specifically, the present invention is specific to the use non-ferrous lead frame material, which does not contain iron or nickel, on a base metal MLCC.
• BME leaded base metal electrode
• This invention utilizes non-ferrous alloys, preferably phosphor bronze, as a performance enhancing lead frame material that enables leaded BME capacitors to operate more efficiently, at higher power levels, with increased capacitance densities and in harsher environments, while providing mechanical robustness to meet the ever demanding design and environmental requirements of modern electronic products.
• the capacitor structure, and electronic improvements, is in direct contradiction to the expectations in the art.
• a leaded BME MLCC stacked capacitor is illustrated in Fig. 1.
• the leaded BME MLCC stacked capacitor, 1 comprises a 2 chip stack with a lower chip, 2, and an upper chip, 3, with "lower” an "upper” being relative terms used for convenience of discussion without limit thereto.
• Each chip has alternating base metal electrode (BME) plates terminating at opposing end terminals. Plates, 4, terminate at termination, 8, of one polarity and plates, 5, terminate at the opposite termination 7, of opposing polarity.
• the chips are attached to lead frames, 9, by solder or conductive adhesive, 10.
• the leaded BME MLCC stacked capacitor can comprise at least one MLCC or a plurality of MLCC's stacked on top of one another. The number of MLCC's in a stack may be up to 200 with 2-20 being optimum. Multiple stacks, such as 1-50 chips per stack, or more preferably 2-10 chips per stack, can be arranged in-line and contained within the same lead frame.
• the plates are base metal electrode plates.
• a particularly preferred plate comprises nickel with a plate consisting essentially of nickel being most preferred.
• Fig. 1 A Another embodiment is illustrated in Fig. 1 A.
• the leaded MLCC capacitor, 20, comprises six chips arranged in a 2x3 orientation with three upper chips, 21 , and three lower chips, 22, between lead frames 23 and 24.
• Fig. 1 B illustrates an embodiment of the invention wherein the nomenclature used herein is described.
• the direction perpendicular to the surface upon which the capacitor is mounted, such as by feet, 19, is designated "n" and referred to as a stack.
• the number of stacks is designated "m”.
• a multi-chip capacitor is therefore referred to as an "n x m array”.
• Fig. 1 B illustrates a 2x3 array.
• Fig. 1 C illustrates an embodiment of the invention.
• the capacitor, 40 comprises a 1xm array with chips, 41 , arranged with the internal plates perpendicular to the substrate, 42.
• a first lead, 43 is mounted to the array on the surface closest to the substrate and the second lead, 44, is mounted to the surface furthest from the substrate.
• the lead frame arms, 45 & 46 may be a through lead, as illustrated in Fig. 1 D, or formed to create a lead foot, 47 & 48, for surface mounting.
• the lead frame may be adhered to the MLCC either by the use of conductive epoxies, solders, or other electrical conductive joining technologies.
• a lead free solder alloy is preferred.
• a particularly preferred solder alloy comprises about 91-92 wt% Sn and about 8-9 wt% Sb and more preferably about 91.5% Sn and about 8.5% Sb.
• Pb/Sn solders can also be used but it is preferred by the industry to move away from Pb bearing solders.
• the preferred lead frame material for this application is a phosphor bronze material having the bulk material being copper and the balance being zinc, tin, and phosphorus.
• the electrical performance of MLCC capacitors has been improved while maintaining or improving the mechanical robustness.
• the preferred lead frame materials are phosphor bronze, brass, copper, and copper alloys all of which exclude Ni and Fe materials. These materials have been considered improper for use in an MLCC applications due to there high CTE which would be expected to provide a component which is fragile to heat variations.
• Phosphor bronze generally consists of a bulk material being about 80+% copper with zinc, tin, and phosphorus making up the balance of the alloy. These materials all have higher electrical conductivity than the Ni/Fe alloys and are also non-magnetic and provide a reduced ESL and ESR. Copper based alloys, such as Alloy 194, are commonly used in the electronics industry for lead frame materials where cost and electrical conductivity, and compatibility to assembly processes are important. Beryllium Copper (BeCu) alloy is also widely used in semi-conductor lead attach because of its superior compliancy. Due to their high CTE none of the materials have been considered preferable as a lead frame component in MLCC.
• Typical ceramic dielectrics have a CTE of about 8x10 "6 to about 12 x10 "6 ⁇ m/m °C with barium titanate being about 10x10 "6 ⁇ m/m °C.
• the resulting CTE range of these composites is typically increased to 6 x 10 '6 ⁇ m/m°C to 14 x 10 ⁇ 6 ⁇ m/m°C.
• Alloy 42 is referred to in the art as a preferred lead frame material due to the CTE of about 5.3x10 "6 ⁇ m/m 0 C.
• Phosphor bronze has a CTE of about 17.8x10 6 ⁇ m/m 0 C.
• Beryllium copper alloy has a CTE of about 16.7x1 (T 6 ⁇ m/m 0 C.
• Alloy 194 has a CTE of about 16.3x10 6 ⁇ m/m 0 C. It is considered contrary to the art to utilize a lead material with a CTE which is higher than that of the MLCC.
• the preferred CTE is at least 2x10 "6 ⁇ m/m 0 C higher than the CTE for the MLCC for the present invention. Even more preferably, the CTE is at least 4x10 "6 ⁇ m/n ⁇ °C higher than the CTE for the ceramic for the present invention. This is in direct contrast to the teachings in the art which require the CTE of the lead frame to be lower, and preferably much lower, than the CTE of the ceramic.
• Fig. 2 also illustrates the flexure comparison of two different non-ferrous alloys, specifically, CU 194 (0) and BeCu ( ⁇ ). This comparison illustrates the superior board flexure achieved when phosphor bronze is utilized as a lead frame material. Another observation is that both the BeCu and Cu 194 offer improved flexure capabilities when compared to direct surface mount or Flex Term technologies.
• the data of Fig. 2 demonstrates the effects of different lead frame alloys on the amount of board flexure a component can withstand. Phosphor Bronze clearly demonstrates its superior flexure capability.
• Fig. 3 illustrates a comparison of three capacitors prepared as indicated relative to Fig. 2.
• One capacitor is a surface mount device(o) with no lead frame.
• a second capacitor utilizes Kemet's FT Cap termination (D) which is a flexible polymer termination as disclosed in CARTS USA 2009 Proceedings, March 2009, Jacksonville, FL "Flexible Termination - Reliability in Stringent Environments".
• the third capacitor utilizes a phosphor bronze lead frame (0) of this invention. Board Flexure comparative data is provided comparing standard surface mount MLCCs, MLCCs mounted with a Phosphor Bronze Lead Frame and the same MLCC design using a compliant polymer termination. Superior performance is observed for the phosphor bronze lead frame.
• Figs. 7a, 7b and 7c illustrate the robustness of a leaded base metal electrode MLCC capacitor with a phosphor bronze lead frame when subjected to long term environmental testing of 1000 hours at elevated temperatures.
• Fig. 7a shows acceptable cold (ambient) IR (insulation resistance), at various time intervals up to IOOOhrs after applying 2 x rated voltage, 100V at 125 0 C to 100 samples.
• Fig. 7b illustrates acceptable hot (125 0 C) IR after the same test conditions as Fig. 7a.
• Fig. 7c shows acceptable cold IR after testing 100 samples at 85 0 C and 85% relative humidity at rated voltage, 50V, for up to 1000hours.
• Figs. 7a, 7b and 7c illustrate the robustness of a leaded base metal electrode MLCC capacitor with a phosphor bronze lead frame when subjected to long term environmental testing of 1000 hours at elevated temperatures.
• Fig. 7a shows acceptable cold (ambient) IR (insulation resistance),
• 7d,7e and 7f illustrate the excellent electrical performance, with acceptable capacitance, dissipation factor (DF) and IR respectively after Thermal Shock testing of 30 samples for 300 cycles from - 55 0 C to +15O 0 C with a transition time of less than 20 seconds between these temperatures.
• Figs. 7g, 7h, and 7i demonstrate excellent performance, acceptable capacitance, DF and IR respectively after Thermal Cycling of 100 samples for 1000 cycles from -55 0 C to + 15O 0 C at 15°C/min temperature ramp with a 30minute dwell at each temperature.
• ESR Equivalent Series Resistance
• P power measured in watts
• I current, measured in amps
• R resistance, measured in ohms.
• FIG. 5 The lower resistance of the phosphor bronze lead frame as compared to the Alloy 42 lead frame in a BME capacitor is illustrated graphically in Fig. 5.
• Fig. 6 shows a plot of the temperature rise of each lead frame type and Table 1 shows the tabulated recorded temperature for each part and each current reading.
• the ripple current test was conducted on base metal MLCC capacitors having the same capacitance value but having lead frames made from Alloy 42 (A), phosphor bronze (C), Copper 194 (B), and beryllium copper (D). The current was increased from 0 Amps to 10 Amps at 100 kHz where a temperature increase was recorded by a thermocouple on the capacitor. The current was then increased to 25 Amps in 5 amp increments while measuring the temperature rise of each part.
• Fig. 6 shows the comparative temperature rise of a capacitor as the current load increases with respect to the various lead frame materials used to attach the capacitor to the test board.
• the capacitor with Alloy 42 lead frame material shows the highest temperature rise due to the fact that Alloy 42 also showed the highest resistivity as shown in Fig. 5.
• Phosphor bronze shows a significantly lower temperature rise than Alloy 42 due to lower resistivity.
• Fig. 8 An embodiment of the invention is set forth in Fig. 8.
• a multiplicity of chips, 80 are arranged such that the internal plates will be parallel. Terminations of common polarity are on a common face, 81.
• An alternative embodiment is illustrated in Fig. 9 wherein chips, 90, are stacked with some plates parallel to adjacent chips and with plates coplanar to other adjacent chips. Terminations are illustrated as 91. Parts are fixtured and oriented to facilitate assembly.
• Fig. 10. An embodiment of the invention is illustrated in Fig. 10.
• chips, 100 are between lead frames, 101. Attached to the lead frame are through leads, 102, which extend into vias of a circuit board.
• FIG. 11 A preferred embodiment is illustrated in Fig. 11.
• a multiplicity of chips, 110 are stacked between two surface mount lead frames, 1 11.
• Table 1 shows the measured temperature rise per capacitor for each different lead frame alloy and at different current levels. The temperature rise exhibited by the phosphor bronze, Copper 194, and beryllium copper, all non-ferrous alloys, is significantly lower than that of the Alloy 42 which is due to their lower resistivity values than Alloy 42
• Table 2 presents calculated power dissipation in watts for each of the capacitors using the power formula Equation 3:

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• Manufacturing & Machinery (AREA)
• Chemical & Material Sciences (AREA)
• Ceramic Engineering (AREA)
• Inorganic Chemistry (AREA)
• Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
• Ceramic Capacitors (AREA)

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• 2010
  • 2010-03-26 WO PCT/US2010/028800 patent/WO2010111575A2/en active Application Filing
  • 2010-03-26 EP EP10756898.2A patent/EP2411988B1/de active Active
  • 2010-03-26 CN CN201080018582.6A patent/CN102422369B/zh active Active
  • 2010-03-26 US US12/732,549 patent/US8331078B2/en active Active
  • 2010-03-26 JP JP2012502278A patent/JP5367154B2/ja active Active
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