Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
  • H01L27/0203—Particular design considerations for integrated circuits
  • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
  • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
  • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
  • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/02—Bonding areas; Manufacturing methods related thereto
  • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
  • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
  • H01L2224/0554—External layer
  • H01L2224/0555—Shape
  • H01L2224/05552—Shape in top view
  • H01L2224/05554—Shape in top view being square
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/4805—Shape
  • H01L2224/4809—Loop shape
  • H01L2224/48091—Arched
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
  • H01L2224/491—Disposition
  • H01L2224/4912—Layout
  • H01L2224/49175—Parallel arrangements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/13—Discrete devices, e.g. 3 terminal devices
  • H01L2924/1304—Transistor
  • H01L2924/1306—Field-effect transistor [FET]
  • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/30—Technical effects
  • H01L2924/301—Electrical effects
  • H01L2924/3011—Impedance

Definitions

• the present invention relates to a semiconductor device having a plurality of power systems.
• a semiconductor device having a plurality of power supply systems that is, a semiconductor device having a plurality of pairs of a power supply terminal and a ground terminal and a semiconductor element provided between each pair is applied to a signal terminal.
• ESD measures are taken based on all power supply terminals and ground terminals.
• FIG. 4 is a partial circuit diagram showing connection states of terminals in a conventional semiconductor device having two power supply systems, a digital power supply system and an analog power supply system.
• the semiconductor device 101 includes, for example, a power supply (VCC1) terminal 110, a ground (GND1) terminal 112, and at least one signal (SIG1) terminal 111 for inputting and outputting signals to and from a digital power supply system of 5V.
• the 5V analog power supply system has a power supply (VCC2) terminal 113, a ground (GND2) terminal 115, and at least one signal (SIG2) terminal 114 for inputting and outputting signals to and from the outside. .
• VCC1 bonding pad 130 GND1 bonding pad 132, SIG1 bonding pad 131, VCC2 bonding pad 133, GND2 bonding pad 135, and SIG2 bonding node 134 by bonding wires 120 to 125, respectively! RU
• the VCC1 bonding pad 130 and the GND1 bonding pad 132 are connected to the VCC1 wiring 150 and the GND1 wiring 152 formed on the semiconductor substrate, respectively.
• the VCC1 wiring 150 and the GND1 wiring 152 are connected to the elements of at least one input / output circuit 143 and the internal circuit 145 of the digital power supply system, and are connected to the signal ESD protection element section 141 as described later.
• the input / output circuit 143 inputs or outputs a signal to or from the SIG1 bonding pad 131, and the internal circuit 145 performs signal processing according to the signal input from the input / output circuit 143 and outputs a signal to the input / output circuit 143.
• the above-described signal ESD protection element section 141 prevents the input / output circuit 143 from being destroyed by ESD.
• the static electricity applied to the SIG1 terminal 111 with respect to the VCC1 terminal 110 is applied to the VCC1 terminal 110. It is composed of a protection element on the VCC1 side to escape, and a protection element on the GND1 side to escape static electricity applied to the SIG1 terminal 111 to the GND1 terminal 112 with reference to the GND1 terminal 112.
• a diode as shown in FIG. 4 or a field transistor (a metal transistor having a gate as a gate, a high value, a MOS transistor) or the like is used.
• ESD measures are taken for the SIG1 terminal 111 based on the VCC1 terminal 110 and the GND1 terminal 112. ESD measures based on the VCC2 pin 113 and GND2 pin 115 of other power supply systems will be described later.
• the VCC2 bonding pad 133 and the GND2 bonding pad 135 are also connected to the VCC2 wiring 153 and the GND2 wiring 155 formed on the semiconductor substrate, respectively.
• the VCC2 wiring 153 and the GND2 wiring 155 are connected to at least one element of the input / output circuit 144 and the internal circuit 146 of the analog power supply system and to the signal ESD protection element section 142.
• the input / output circuit 144 inputs or outputs a signal to or from the SIG2 bonding pad 134, and the internal circuit 146 performs signal processing according to the signal input from the input / output circuit 144 and outputs a signal to the input / output circuit 144.
• the signal ESD protection element section 142 also prevents the input / output circuit 144 from being destroyed by ESD, and its configuration and function are substantially the same as those of the signal ESD protection element section 141 described above.
• the power supply ESD protection element section 140 is capable of destroying the elements of the input / output circuits 143 and 144 or the internal circuits 145 and 146 due to ESD, even if static electricity is applied between any of the power supply terminals or the ground terminals.
• GND2 pin 11 5 Protection element between GND1 pin 112 and VCC1 pin 110—Protection element between VCC2 pin 113
• Each element has two opposing diode forces because of its high ESD protection.
• This configuration is possible because the anode and the cathode of the diode have the same potential.
• Other protection elements for example, the protection element between the VCC1 pin 110 and the GND1 pin 112 increase the protection capability by further increasing the area of the protection element.
• the static electricity applied to the SIG1 pin 111 based on the VCC2 pin 113 is applied to the protection element on the VCC1 side, which constitutes the signal ESD protection element 141, the VCC1 wiring 150, and the VCC1 pin which constitutes the power supply ESD protection element 140.
• static electricity applied to the SIG1 terminal 111 with respect to the GND2 terminal 115 also constitutes the signal-side ESD protection element 141, the GND1 side protection element 152, the GND1 wiring 152, and the power supply ESD protection element 140.
• the signal ESD protection element 142 and the power supply ESD protection Destruction prevention is realized through the element section 140.
• an ESD measure for a signal terminal of one of the power supply systems with reference to a power supply terminal or a ground terminal of another power supply system is performed by using a signal ESD protection element. Destruction prevention is achieved through the power supply and the power supply ESD protection element.
• the above-described semiconductor device 101 is a semiconductor device having two power supply systems, a digital power supply system and an analog power supply system, as a plurality of power supply systems. Even in semiconductor devices that have multiple power supply systems with different power supply voltages, such as a power supply system, by providing the power supply ESD protection element 140, destruction by ESD with reference to the power supply terminals and ground terminals of other power supply systems can be achieved.
• the protection element between the VCC1 pin 110 and the VCC2 pin 113 in the power supply ESD protection element section 140 is a reverse diode in normal operation. Forces (or field transistors, etc.) are also configured.
• Patent Document 1 JP-A-8-148650 Disclosure of the invention
• the power supply ESD protection element portion in the semiconductor device having a plurality of power supply systems like the power supply ESD protection element portion 140 of the semiconductor device 101, has many protection elements between power supply terminals and ground terminals. , And each of those protection elements occupies a large area. Therefore, in semiconductor devices, it is not sufficient to arrange the power supply ESD protection element in an empty space where elements of the internal circuit and the input / output circuit are not arranged. It is necessary to secure space for the ESD protection element part! /, So that it becomes a factor of increasing the chip size.
• the present invention has been made in view of the above-mentioned circumstances, and an object thereof is to provide a semiconductor device having a plurality of power supply systems. Another object of the present invention is to provide a semiconductor device capable of realizing prevention of destruction by ESD with reference to a power supply terminal and a ground terminal of another power supply system and suppressing an increase in chip size due to the prevention. Means for solving the problem
• a semiconductor device has at least a first and a second power supply system as a plurality of power supply systems, and the first and the second power supply systems. Are power bonding pads and ground bonding pads formed on the semiconductor substrate, respectively.
• a semiconductor device comprising: at least one signal bonding pad; and an input / output circuit connected to each of the bonding pads and for inputting or outputting a signal between the signal bonding pads.
• the second power supply system includes a first ESD protection bonding pad, a signal bonding pad and a signal ESD protection element connected to the first ESD protection bonding pad on the semiconductor substrate.
• the first ESD protection bonding pads of the second power supply system are connected to each other.
• the first and second power supply systems of the semiconductor device may further include a second ESD protection bonding pad connected to the signal ESD protection element portion on the semiconductor substrate, if necessary.
• the second ESD protection bonding pads of the second power supply system are connected to each other.
• the semiconductor device is desirably connected to a first ESD protection bonding pad (and possibly a second ESD protection bonding pad) of one of the first and second power supply systems.
• the power supply further includes an ESD protection element for power supply.
• the first and second power supply systems are respectively connected to a power supply terminal connected to a power supply bonding pad, a ground terminal connected to a ground bonding pad, and a signal bonding pad.
• a first power supply system and a second power supply system respectively, wherein the first ESD protection bonding pad is one of a power supply terminal or a ground terminal (and, in some cases, the second ESD protection bonding pad is a power supply terminal or a ground terminal). Terminal).
• a bonding wire is desirably used for connecting these bonding pads and terminals.
• an ESD protection bonding pad is provided in each power supply system of a semiconductor device having a plurality of power supply systems, in addition to a power supply bonding pad and a ground bonding pad. , Release the static electricity applied to the signal terminal through it. As a result, it is possible to suppress the increase in chip size while implementing ESD destruction measures for the signal terminals of one power supply system with reference to the power supply terminals and ground terminals of the other power supply system.
• FIG. 1 is a partial circuit diagram of a semiconductor device according to a preferred first embodiment of the present invention.
• FIG. 3 is a partial circuit diagram of a semiconductor device according to a preferred second embodiment of the present invention.
• FIG. 4 is a partial circuit diagram of a conventional semiconductor device.
• VCC2 power supply for the second power supply
• SIG2 second power supply signal
• FIG. 1 is a partial circuit diagram showing a connection state of each terminal in a semiconductor device according to a first preferred embodiment of the present invention.
• the semiconductor device 1 has two power supply systems as a plurality of power supply systems, a 5V digital power supply system (first power supply system) and a 5V analog power supply system (second power supply system).
• the first power supply system has a power supply (VCC1) terminal 10, a ground (GND1) terminal 12, and at least one signal (SIG1) terminal 11 for inputting and outputting signals to and from the outside.
• the second power supply system has a power supply (VCC2) terminal 13, a ground (GND2) terminal 15, and at least one signal (SIG2) terminal 14 for inputting and outputting signals to and from the outside.
• the first power supply system includes a power supply (VCC1) bonding pad 30, a ground (GND1) bonding pad 3 on the semiconductor substrate.
• the second power supply system has a power supply (VCC2) bonding pad 33, a ground (GND2) bonding pad 35, and at least one signal (SIG2) bonding pad 34 on a semiconductor substrate.
• VCC1 terminal 10, SIG1 terminal 11, GND1 terminal 12, VCC2 terminal 13, SIG2 terminal 14, GND2 terminal 15 are connected via bonding wires 20 to 25 respectively to VCC1 bonding pad 30, SIG1 bonding pad 31, GND1 bonding pad 32, VCC2 bonding pad 3
• the first power supply system includes a VCC
• ESD protection bonding pad (first power supply system second ESD protection bonding pad) 36, GNDIESD protection bonding pad (first power supply system first ESD protection bonding pad) 37 near GND1 bonding pad 32 Is provided.
• the second power supply system has a VCC2 ESD protection bonding pad (second ESD protection bonding pad of the second power supply system) 38 near the VCC2 bonding pad 33 and a GND2 bonding pad 35 near the semiconductor substrate.
• a GND2 ESD protection bonding pad (first ESD protection bonding pad of the second power supply system) 39 is provided.
• ESD protection bonding pads 36, 37, 38, 39 are connected to the VCC1 terminal 10, the GND1 terminal 12, the VCC2 terminal 13, and the GND2 terminal 15 via bonding wires 26 to 29. Further, the VCC1 ESD protection bonding pad 36 and the VCC2 ESD protection bonding pad 38 are connected to each other, and the GNDIESD protection bonding pad 37 and the GND2 ESD protection bonding pad 39 are connected to each other.
• the VCC1 bonding pad 30 and the GND1 bonding pad 32 are connected to a VCC1 wiring 50 and a GND1 wiring 52 formed on a semiconductor substrate, respectively.
• the VCC1 wiring 50 and the GND1 wiring 52 are connected to at least one input / output circuit 43 of the first power supply system and the internal circuit. Connected to the element on road 45.
• the input / output circuit 43 inputs and outputs signals to and from the SIG1 bonding pad 31, and the internal circuit 45 performs signal processing and outputs signals to the input / output circuit 43 according to the signal input from the input / output circuit 43.
• illustration of input elements is omitted.
• the signal ESD protection element portion 41a for preventing the input / output circuit 43 from being damaged by ESD is connected between the SIG1 bonding pad 31 and the VC C1 ESD protection bonding pad 36 by the VCC1 ESD protection wiring 56.
• the connection is made between the SIG1 bonding pad 31 and the GND1 ESD protection bonding pad 37 by the GND1 ESD protection wiring 57.
• the signal ESD protection element section 41a is a protection element on the VCC1 side that allows static electricity applied to the SIG1 pin 11 to escape from the VCC1 ESD protection wiring 56 to the VCC1 pin 10 through the VCC1 ESD protection bonding pad 36 with reference to the VCC1 pin 10.
• a protection element on the GND1 side for discharging static electricity applied to the SIG1 terminal 11 based on the GND1 terminal 12 from the GND1 ESD protection wiring 57 to the GND1 terminal 12 through the GND1 ESD protection bonding pad 37 is also configured.
• these protection elements specifically, diodes and field transistors (high-value MOS transistors having a metal wiring gate) are used.
• the VCC2 bonding pad 33 and the GND2 bonding pad 35 are connected to a VCC2 wiring 53 and a GND2 wiring 55, respectively, formed on the semiconductor substrate.
• the VCC2 wiring 53 and the GND2 wiring 55 are connected to at least one element of the input / output circuit 44 and the internal circuit 46 of the second power supply system.
• the input / output circuit 44 also inputs and outputs signals to and from the SIG2 bonding pad 34 in the same manner as the input / output circuit 43 described above, and the internal circuit 46 performs signal processing in accordance with the signal input from the input / output circuit 44. Or output a signal to the input / output circuit 44.
• the signal ESD protection element part 42a for preventing the input / output circuit 44 from being damaged by ESD is also connected between the SIG2 bonding pad 34 and the VCC2 ESD protection bonding pad 38 by the VCC2 ESD protection wiring 58 and the SIG 2 bonding by the GND2 ESD protection wiring 59. Connected between pad 34 and GND2 ESD protection bonding pad 39.
• the signal ESD protection element section 42a is applied to the SIG2 pin 14 based on the VCC2 pin 13.
• the protection element on the VCC2 side to release the static electricity from the VCC2 ESD protection wiring 58 to the VCC2 pin 13 through the VCC2 ESD protection bonding pad 38 and the static electricity applied to the SIG2 pin 14 with respect to the GND2 pin 15 from the GND2 ESD protection wiring 59 GND2 ESD protection This is composed of a protection element on the GND2 side to escape to the GND2 terminal 15 through the bonding pad 39.
• the power supply ESD protection element portion 40a of the semiconductor device 1 is connected between the VCC1 ESD protection bonding pad 36 and the GNDIESD protection bonding pad 37, specifically, between the VCC1 ESD protection wiring 56 and the GNDIESD protection wiring 57. It consists of a protection element (one diode).
• the power supply ESD protection element section 40a is for releasing static electricity so that elements of the input / output circuit 43 or the internal circuit 45 are not damaged when static electricity is applied between the VCC1 pin 10 and the GND1 pin 12. is there.
• the VCC1 ESD protection bonding pad 36 and the VCC2 ESD protection bonding pad 38 are connected to each other, and the GNDIESD protection bonding pad 37 and the GND2 ESD protection bonding pad 39 are connected to each other.
• the VCC1 ESD protection wiring 56 and the GNDIESD protection wiring 57 are connected to the VCC2 ESD protection wiring 58 and the GND2 ESD protection wiring 59, respectively, on the semiconductor substrate.
• the ESD protection element part 40a for the power supply that is, the VCC1 ESD protection wiring 56 and the GND1E SD protection via the VCC2 ESD protection wiring 58 and the GND2 ESD protection wiring 59. Static electricity escapes through the protection element connected between wires 57. The same applies when static electricity is applied between power supply (including ground) terminals in other combinations.
• the static electricity applied to the SIG1 pin 11 with respect to the VCC2 pin 13 is transferred from the protection element on the V CC1 side that constitutes the signal ESD protection element section 41a to the VCC1 ESD protection wiring 56, VCC2 ESD protection wiring 58, VCC2 ESD protection bonding pad 38, Escape to VCC2 terminal 13 through bonding wire 28.
• the static electricity applied to the SIG1 terminal 11 with respect to the GND2 terminal 15 and the power of the protection element on the GND1 side, which constitutes the signal ESD protection element section 41a, is also GNDIESD protection distribution. Escape to GND2 terminal 115 through line 57, GND2ESD protective wiring 59, GND2ESD protective bonding pad 39, and bonding wire 29.
• the SIG1 terminal 11 can be prevented from being damaged by ESD with reference to the power supply terminal and the ground terminal of another power supply system.
• the SIG2 terminal 14 can be similarly prevented from being damaged by ESD with reference to the power terminal / ground terminal of another power system, that is, the VCC1 terminal 10 and the GND1 terminal 12.
• FIG. 2 is a layout diagram showing the entire semiconductor device 1.
• Each of the terminals 10 to 15, which are lead terminals, has an inner lead portion inside thereof connected to each of the bonding pads 30 to 39 by bonding wires 20 to 29.
• a plurality of SIG1 terminals 11 and SIG2 terminals 14, which are signal terminals, are provided respectively, and a bonding wire 21 or 24, a SIG1 bonding pad 31 or SIG2 bonding pad 34, a signal ESD protection element 41a or 42a, and an input / output circuit 43 are provided for each of them. Or 44 are provided.
• reference numerals are omitted for the SIG1 bonding pad 31 or the SIG2 bonding pad 34, the signal ESD protection element portion 41a or 42a, and the like.
• the GND1 ESD protection wiring 57 or GND D2 ESD protection wiring 59 surrounds each bonding pad 30 to 39 outside, and the VCC1 ESD protection wiring 56 or VCC2 ESD protection wiring 58 inside each bonding pad 30 to 39, VCC1 wiring 50 or VCC2.
• the wiring 53 is inside the VCC1 ESD protection wiring 56 or the VCC2 ESD protection wiring 58 and surrounds the input / output circuit 43 or 44, and the GND1 wiring 52 or GND2 wiring 55 is provided inside the input / output circuit 43 or 44, respectively.
• the protection elements constituting the power supply ESD protection element section 40a are divided and arranged in the empty space of the semiconductor device 1 (ie, four corners of the semiconductor device 1 in FIG. 2).
• the number of protection elements constituting the power supply ESD protection element section 40a can be reduced, thereby suppressing an increase in chip size. Also, when measuring the breakdown strength of a semiconductor device against ESD, the breakdown strength hardly changes in principle between the case where the VCC1 pin 10 is used as a reference and the case where the VCC2 pin 13 is used. It is also possible to omit the measurement performed. The same applies when the GND 1 terminal 12 is referenced and when the GND 2 terminal 15 is referenced.
• the first power supply system that is, the power supply wiring due to the elements of the digital power supply system Path for transmitting superimposed power noise, i.e., VCC1 bonding pad 30, bonding wire 20, VCC1 terminal 10, bonding wire 26, VCC1 ESD protection bonding pad 36, VCC1 ESD protection wiring 56, VCC2 ESD protection wiring 58, VCC2 ESD protection bonding pad 38, bonding wire 28, VCC2 terminal 13, bonding wire 23, VCC2 bonding pad 33, power supply noise from digital power supply VCC1 wiring 50 to the second power supply system, that is, analog power supply VCC2 wiring 53.
• the semiconductor device 2 has a plurality of power supply systems having different power supply voltages as a plurality of power supply systems, that is, a 5V first power supply system and a 3V second power supply system.
• the VCC1 terminal 10 of the semiconductor device 2 is connected only to the VCC1 bonding pad 30, and the VCC1 ESD protection bonding pad 36 in the semiconductor device 1 does not exist, and therefore, the VCC1 ESD protection wiring 56 does not exist.
• the VCC2 terminal 13 is connected only to the VCC2 bonding pad 33, the VCC2 ESD protection bonding pad 38 in the semiconductor device 1 does not exist, and therefore the VCC2 ESD protection wiring 58 does not exist.
• the GND1 ESD protection bonding pad (first ESD protection bonding pad for the first power supply system) 37 and the GND2 ESD protection bonding pad (second power supply first ESD protection bonding pad) 39 exist .
• the protection elements include signal protection elements 41b and 42b connected to the GND1 ESD protection bonding pad 37 and the GND2 ESD protection bonding node 39.
• the VCC1 bonding pad 30 the protection element (one diode) between the GND1 ESD protection bonding pad 37 and the VCC2 bonding pad 33
• a power supply ESD protection element section 40b having a protection element (one diode) between the GND1 ESD protection bonding pad 37 and a protection element (one diode) between the VCC1 bonding pad 30 and the VCC2 bonding pad 33 is provided.
• the signal terminal of one power supply system is referred to the ground terminal of the other power supply system, that is, the case where static electricity is applied to the SIG1 terminal 11 with respect to the GND2 terminal 15 and the case where the GND1 terminal
• the prevention of destruction by ESD when static electricity is applied to the SIG2 terminal 14 with reference to 12 is realized in the same manner as the semiconductor device 1.
• the signal terminal of one power supply system is referred to the power supply terminal of the other power supply system, that is, the case where static electricity is applied to the SIG1 terminal 11 based on the VCC2 terminal 13 and the case where the SIG2 terminal 14 is
• the prevention of destruction due to ESD when static electricity is applied to the semiconductor device is realized in the same manner as the conventional semiconductor device described above.
• the power supply ESD protection element portion 40b of the semiconductor device 2 has a larger number of protection elements as constituent elements than the power supply ESD protection element portion 40a of the semiconductor device 1, but the conventional power supply ESD protection element. It is possible to reduce the number of protection elements as compared with the unit, thereby suppressing an increase in chip size.
• each ESD protection bonding pad is connected to a corresponding power supply bonding pad or ground bonding pad by wiring on the printed circuit board.
• the present invention is not limited to the above-described embodiment, and various design changes can be made within the scope of the claims.
• the VCC1 ESD protection bonding pad 36 is connected to the first power supply system for understanding the claims.
• the second ESD protection bonding pad, GND1 ESD protection bonding pad 37 is the first ESD protection bonding pad of the first power supply system
• the VCC2 ESD protection bonding pad 38 is the second ESD protection bonding pad of the second power supply system, GND2ESD
• the protection bonding pad 39 corresponds to the first ESD protection bonding pad of the second power supply system
• the VCC1 ESD protection bonding pad 36 corresponds to the first ESD protection bonding pad of the first power supply system, GND1ESD.
• the protective bonding pad 37 is the second ESD protection bonding pad of the first power supply system
• the VCC2 ESD protection bonding pad 38 is the first ESD protection bonding pad of the second power supply system
• the GND2 ESD protection bonding pad 39 is the second power supply
• the second ESD protection bonding pad of the system may be adapted to each.
• a semiconductor device having two power supply systems has been described as a semiconductor device having a plurality of power supply systems.
• all or one of the power supply systems of a semiconductor device having three or more power supply systems has been described. It is needless to say that the present invention can also be applied to parts.

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• 2005
  • 2005-03-11 JP JP2006511007A patent/JP4978998B2/ja active Active
  • 2005-03-11 CN CN200580007544XA patent/CN1930676B/zh not_active Expired - Fee Related
  • 2005-03-11 KR KR1020067018704A patent/KR20060127190A/ko not_active Application Discontinuation
  • 2005-03-11 WO PCT/JP2005/004337 patent/WO2005088701A1/ja active Application Filing
  • 2005-03-11 TW TW094107588A patent/TW200535963A/zh not_active IP Right Cessation
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