WO2005038899A1 - 高抵抗シリコンウェーハの製造方法、並びにエピタキシャルウェーハおよびsoiウェーハの製造方法 - Google Patents
高抵抗シリコンウェーハの製造方法、並びにエピタキシャルウェーハおよびsoiウェーハの製造方法 Download PDFInfo
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- WO2005038899A1 WO2005038899A1 PCT/JP2004/011050 JP2004011050W WO2005038899A1 WO 2005038899 A1 WO2005038899 A1 WO 2005038899A1 JP 2004011050 W JP2004011050 W JP 2004011050W WO 2005038899 A1 WO2005038899 A1 WO 2005038899A1
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- heat treatment
- wafer
- oxygen
- silicon wafer
- atoms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04748184.1A EP1677344B1 (en) | 2003-10-21 | 2004-08-02 | Process for producing high resistivity silicon wafer, and process for producing epitaxial wafer and soi wafer |
JP2005514709A JP4289354B2 (ja) | 2003-10-21 | 2004-08-02 | 高抵抗シリコンウェーハの製造方法、並びにエピタキシャルウェーハおよびsoiウェーハの製造方法 |
US10/576,321 US7803228B2 (en) | 2003-10-21 | 2004-08-02 | Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and SOI wafers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-360251 | 2003-10-21 | ||
JP2003360251 | 2003-10-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005038899A1 true WO2005038899A1 (ja) | 2005-04-28 |
Family
ID=34463410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/011050 WO2005038899A1 (ja) | 2003-10-21 | 2004-08-02 | 高抵抗シリコンウェーハの製造方法、並びにエピタキシャルウェーハおよびsoiウェーハの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7803228B2 (ja) |
EP (1) | EP1677344B1 (ja) |
JP (1) | JP4289354B2 (ja) |
KR (1) | KR100779341B1 (ja) |
CN (1) | CN100461349C (ja) |
WO (1) | WO2005038899A1 (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007207876A (ja) * | 2006-01-31 | 2007-08-16 | Sumco Corp | 高周波ダイオードおよびその製造方法 |
JP2007207875A (ja) * | 2006-01-31 | 2007-08-16 | Sumco Corp | シリコンウェーハおよびその製造方法 |
WO2008029918A1 (fr) * | 2006-09-07 | 2008-03-13 | Sumco Corporation | Substrat à semi-conducteurs pour dispositif de formation d'image à semi-conducteurs, dispositif de formation d'image à semi-conducteurs et procédé pour les fabriquer |
JP2009158891A (ja) * | 2007-12-28 | 2009-07-16 | Siltronic Ag | アニールシリコンウエハの製造方法 |
JP2009164155A (ja) * | 2007-12-28 | 2009-07-23 | Siltronic Ag | シリコンウエハの製造方法 |
JP2010114211A (ja) * | 2008-11-05 | 2010-05-20 | Shin Etsu Handotai Co Ltd | エピタキシャルシリコンウェーハの製造方法 |
JP2012076982A (ja) * | 2010-10-06 | 2012-04-19 | Sumco Corp | シリコンウェーハの製造方法 |
JP2013509697A (ja) * | 2009-10-30 | 2013-03-14 | ソイテック | 半導体・オン・絶縁体型構造における応力の分布を制御するための方法およびこの方法に関連した構造 |
WO2015079777A1 (ja) * | 2013-11-26 | 2015-06-04 | 株式会社Sumco | エピタキシャルシリコンウェーハ、および、エピタキシャルシリコンウェーハの製造方法 |
US9111883B2 (en) | 2011-12-06 | 2015-08-18 | Shin-Etsu Handotai Co., Ltd. | Method for evaluating silicon single crystal and method for manufacturing silicon single crystal |
JP2018190903A (ja) * | 2017-05-10 | 2018-11-29 | グローバルウェーハズ・ジャパン株式会社 | 半導体ウェハの製造方法及び半導体ウェハ |
WO2022038826A1 (ja) | 2020-08-18 | 2022-02-24 | 信越半導体株式会社 | 窒化物半導体ウェーハの製造方法及び窒化物半導体ウェーハ |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7316745B2 (en) * | 2002-07-17 | 2008-01-08 | Sumco Corporation | High-resistance silicon wafer and process for producing the same |
WO2006082469A1 (en) * | 2005-02-03 | 2006-08-10 | S.O.I.Tec Silicon On Insulator Technologies | Method for applying a high temperature treatment to a semimiconductor wafer |
JP2006261632A (ja) * | 2005-02-18 | 2006-09-28 | Sumco Corp | シリコンウェーハの熱処理方法 |
JP5315596B2 (ja) * | 2006-07-24 | 2013-10-16 | 株式会社Sumco | 貼合せsoiウェーハの製造方法 |
US7879699B2 (en) | 2007-09-28 | 2011-02-01 | Infineon Technologies Ag | Wafer and a method for manufacturing a wafer |
US8378384B2 (en) * | 2007-09-28 | 2013-02-19 | Infineon Technologies Ag | Wafer and method for producing a wafer |
US20090242939A1 (en) * | 2008-03-25 | 2009-10-01 | Sumco Corporation | Wafer for backside illumination type solid imaging device, production method thereof and backside illumination solid imaging device |
JP2009283533A (ja) * | 2008-05-20 | 2009-12-03 | Sumco Corp | 裏面照射型固体撮像素子用ウェーハ、その製造方法及び裏面照射型固体撮像素子 |
FR2953640B1 (fr) | 2009-12-04 | 2012-02-10 | S O I Tec Silicon On Insulator Tech | Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante |
JP5997552B2 (ja) * | 2011-09-27 | 2016-09-28 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
KR102091500B1 (ko) * | 2013-06-21 | 2020-03-20 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
FR3051968B1 (fr) * | 2016-05-25 | 2018-06-01 | Soitec | Procede de fabrication d'un substrat semi-conducteur a haute resistivite |
WO2017214084A1 (en) | 2016-06-08 | 2017-12-14 | Sunedison Semiconductor Limited | High resistivity single crystal silicon ingot and wafer having improved mechanical strength |
JP6737066B2 (ja) | 2016-08-22 | 2020-08-05 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、及び固体撮像素子の製造方法 |
FR3058561B1 (fr) * | 2016-11-04 | 2018-11-02 | Soitec | Procede de fabrication d'un element semi-conducteur comprenant un substrat hautement resistif |
CN115369486B (zh) * | 2022-10-26 | 2023-04-11 | 新美光(苏州)半导体科技有限公司 | 一种解决异常硅棒电阻虚高与导电类型反转的方法 |
Citations (6)
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WO2000055397A1 (fr) * | 1999-03-16 | 2000-09-21 | Shin-Etsu Handotai Co., Ltd. | Procede de production d'une tranche de silicium et tranche de silicium ainsi obtenue |
JP2000344598A (ja) * | 1999-03-26 | 2000-12-12 | Nippon Steel Corp | シリコン半導体基板及びその製造方法 |
WO2001079593A1 (fr) * | 2000-04-14 | 2001-10-25 | Shin-Etsu Handotai Co.,Ltd. | Plaquette de silicium, plaquette de silicium epitaxiale, plaquette de recuit et procede de production de ces plaquettes |
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WO2004008521A1 (ja) * | 2002-07-17 | 2004-01-22 | Sumitomo Mitsubishi Silicon Corporation | 高抵抗シリコンウエーハ及びその製造方法 |
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JP2002184779A (ja) * | 2000-12-13 | 2002-06-28 | Shin Etsu Handotai Co Ltd | アニールウェーハの製造方法及びアニールウェーハ |
JP3994665B2 (ja) * | 2000-12-28 | 2007-10-24 | 信越半導体株式会社 | シリコン単結晶ウエーハおよびシリコン単結晶の製造方法 |
TWI256076B (en) * | 2001-04-11 | 2006-06-01 | Memc Electronic Materials | Control of thermal donor formation in high resistivity CZ silicon |
KR20040037031A (ko) * | 2001-06-22 | 2004-05-04 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 이온 주입에 의한 고유 게터링을 갖는 실리콘 온인슐레이터 구조 제조 방법 |
KR100920862B1 (ko) * | 2001-12-21 | 2009-10-09 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진 이상적인 산소 침전 실리콘 웨이퍼의 제조 방법 |
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2004
- 2004-08-02 KR KR1020067007474A patent/KR100779341B1/ko active IP Right Grant
- 2004-08-02 JP JP2005514709A patent/JP4289354B2/ja active Active
- 2004-08-02 EP EP04748184.1A patent/EP1677344B1/en active Active
- 2004-08-02 US US10/576,321 patent/US7803228B2/en active Active
- 2004-08-02 WO PCT/JP2004/011050 patent/WO2005038899A1/ja active Application Filing
- 2004-08-02 CN CNB2004800310619A patent/CN100461349C/zh active Active
Patent Citations (6)
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WO2000055397A1 (fr) * | 1999-03-16 | 2000-09-21 | Shin-Etsu Handotai Co., Ltd. | Procede de production d'une tranche de silicium et tranche de silicium ainsi obtenue |
JP2000344598A (ja) * | 1999-03-26 | 2000-12-12 | Nippon Steel Corp | シリコン半導体基板及びその製造方法 |
WO2001079593A1 (fr) * | 2000-04-14 | 2001-10-25 | Shin-Etsu Handotai Co.,Ltd. | Plaquette de silicium, plaquette de silicium epitaxiale, plaquette de recuit et procede de production de ces plaquettes |
JP2003286094A (ja) * | 2002-03-27 | 2003-10-07 | Sumitomo Mitsubishi Silicon Corp | 半導体シリコン基板の製造方法 |
WO2003092065A1 (fr) * | 2002-04-26 | 2003-11-06 | Sumitomo Mitsubishi Silicon Corporation | Tranche de silicium a haute resistance et son procede de production |
WO2004008521A1 (ja) * | 2002-07-17 | 2004-01-22 | Sumitomo Mitsubishi Silicon Corporation | 高抵抗シリコンウエーハ及びその製造方法 |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007207876A (ja) * | 2006-01-31 | 2007-08-16 | Sumco Corp | 高周波ダイオードおよびその製造方法 |
JP2007207875A (ja) * | 2006-01-31 | 2007-08-16 | Sumco Corp | シリコンウェーハおよびその製造方法 |
JP4650493B2 (ja) * | 2006-09-07 | 2011-03-16 | 株式会社Sumco | 固体撮像素子用半導体基板およびその製造方法 |
US8492193B2 (en) | 2006-09-07 | 2013-07-23 | Sumco Corporation | Semiconductor substrate for solid-state imaging sensing device as well as solid-state image sensing device and method for producing the same |
JPWO2008029918A1 (ja) * | 2006-09-07 | 2010-01-21 | 株式会社Sumco | 固体撮像素子用半導体基板および固体撮像素子ならびにそれらの製造方法 |
JP2010109382A (ja) * | 2006-09-07 | 2010-05-13 | Sumco Corp | 固体撮像素子およびその製造方法 |
KR101001124B1 (ko) * | 2006-09-07 | 2010-12-14 | 가부시키가이샤 사무코 | 고체 촬상 디바이스용 반도체 기판 및 고체 촬상 디바이스 그리고 그것들의 제조 방법 |
JP4650584B2 (ja) * | 2006-09-07 | 2011-03-16 | 株式会社Sumco | 固体撮像素子およびその製造方法 |
WO2008029918A1 (fr) * | 2006-09-07 | 2008-03-13 | Sumco Corporation | Substrat à semi-conducteurs pour dispositif de formation d'image à semi-conducteurs, dispositif de formation d'image à semi-conducteurs et procédé pour les fabriquer |
US8063466B2 (en) | 2006-09-07 | 2011-11-22 | Sumco Corporation | Semiconductor substrate for solid-state image sensing device as well as solid-state image sensing device and method for producing the same |
JP2009164155A (ja) * | 2007-12-28 | 2009-07-23 | Siltronic Ag | シリコンウエハの製造方法 |
JP2009158891A (ja) * | 2007-12-28 | 2009-07-16 | Siltronic Ag | アニールシリコンウエハの製造方法 |
JP2010114211A (ja) * | 2008-11-05 | 2010-05-20 | Shin Etsu Handotai Co Ltd | エピタキシャルシリコンウェーハの製造方法 |
JP2013509697A (ja) * | 2009-10-30 | 2013-03-14 | ソイテック | 半導体・オン・絶縁体型構造における応力の分布を制御するための方法およびこの方法に関連した構造 |
JP2012076982A (ja) * | 2010-10-06 | 2012-04-19 | Sumco Corp | シリコンウェーハの製造方法 |
US9111883B2 (en) | 2011-12-06 | 2015-08-18 | Shin-Etsu Handotai Co., Ltd. | Method for evaluating silicon single crystal and method for manufacturing silicon single crystal |
WO2015079777A1 (ja) * | 2013-11-26 | 2015-06-04 | 株式会社Sumco | エピタキシャルシリコンウェーハ、および、エピタキシャルシリコンウェーハの製造方法 |
JP2015103703A (ja) * | 2013-11-26 | 2015-06-04 | 株式会社Sumco | エピタキシャルシリコンウェーハ、および、エピタキシャルシリコンウェーハの製造方法 |
JP2018190903A (ja) * | 2017-05-10 | 2018-11-29 | グローバルウェーハズ・ジャパン株式会社 | 半導体ウェハの製造方法及び半導体ウェハ |
WO2022038826A1 (ja) | 2020-08-18 | 2022-02-24 | 信越半導体株式会社 | 窒化物半導体ウェーハの製造方法及び窒化物半導体ウェーハ |
Also Published As
Publication number | Publication date |
---|---|
CN100461349C (zh) | 2009-02-11 |
US7803228B2 (en) | 2010-09-28 |
US20070066033A1 (en) | 2007-03-22 |
EP1677344B1 (en) | 2013-11-06 |
EP1677344A4 (en) | 2008-12-17 |
KR20060063989A (ko) | 2006-06-12 |
JP4289354B2 (ja) | 2009-07-01 |
JPWO2005038899A1 (ja) | 2007-02-01 |
EP1677344A1 (en) | 2006-07-05 |
KR100779341B1 (ko) | 2007-11-23 |
CN1871698A (zh) | 2006-11-29 |
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