WO2005019376A1 - 酸窒化物蛍光体と発光器具 - Google Patents
酸窒化物蛍光体と発光器具 Download PDFInfo
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- WO2005019376A1 WO2005019376A1 PCT/JP2004/012135 JP2004012135W WO2005019376A1 WO 2005019376 A1 WO2005019376 A1 WO 2005019376A1 JP 2004012135 W JP2004012135 W JP 2004012135W WO 2005019376 A1 WO2005019376 A1 WO 2005019376A1
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- Prior art keywords
- phosphor
- light
- oxynitride
- oxynitride phosphor
- elements
- Prior art date
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 169
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 43
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 37
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 34
- 230000005284 excitation Effects 0.000 claims abstract description 29
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 20
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 18
- 238000000695 excitation spectrum Methods 0.000 claims abstract description 15
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 14
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 14
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 14
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 14
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 14
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 13
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 13
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 12
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 9
- 238000002189 fluorescence spectrum Methods 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 64
- 239000013078 crystal Substances 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- -1 E r Inorganic materials 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 6
- 238000013461 design Methods 0.000 abstract description 5
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 4
- 150000002910 rare earth metals Chemical class 0.000 abstract description 4
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 33
- 238000000295 emission spectrum Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004570 mortar (masonry) Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N hexane Substances CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 238000000634 powder X-ray diffraction Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910001940 europium oxide Inorganic materials 0.000 description 2
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910002483 Cu Ka Inorganic materials 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000003991 Rietveld refinement Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- GKWQURWLOXNNEW-UHFFFAOYSA-N azane europium Chemical compound N.[Eu] GKWQURWLOXNNEW-UHFFFAOYSA-N 0.000 description 1
- PSBUJOCDKOWAGJ-UHFFFAOYSA-N azanylidyneeuropium Chemical compound [Eu]#N PSBUJOCDKOWAGJ-UHFFFAOYSA-N 0.000 description 1
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- QJWDYDSKKWMXSO-UHFFFAOYSA-N lanthanum Chemical compound [La].[La] QJWDYDSKKWMXSO-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- IBIRZFNPWYRWOG-UHFFFAOYSA-N phosphane;phosphoric acid Chemical compound P.OP(O)(O)=O IBIRZFNPWYRWOG-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to a silicon oxynitride phosphor mainly composed of a JEM phase and its use. More specifically, the use relates to a lighting device and a light emitting device of an image display device, which utilize the property of the phosphor, that is, the property of emitting fluorescence having a wavelength of 420 nm or more.
- Phosphors include fluorescent display tubes (VFD) and field emission displays (F
- ED plasma display panel
- CRT cathode ray tube
- LED white light emitting diode
- any of these applications in order to cause the phosphor to emit light, it is necessary to supply energy to the phosphor to excite the phosphor, and the phosphor is exposed to vacuum ultraviolet light, ultraviolet light, electron beam, blue light, or the like. It is excited by a high energy excitation source and emits visible light. Therefore, there is a problem that the phosphor is exposed to the excitation source as described above, and as a result, the brightness of the phosphor is reduced.
- phosphors such as silicate phosphor, phosphate phosphor, aluminate phosphor, Sialon phosphors have been proposed as phosphors such as sulfide phosphors, which have less decrease in luminance than phosphors.
- a method for producing a sialon phosphor for example, nitride Kei element (S i 3N4), aluminum nitride (A 1 N), mixed to the europium oxide (E u 2 0 3) becomes a predetermined molar ratio
- it has been carried out by baking by a hot press method while maintaining at 1700 ° C. for 1 hour in nitrogen at 1 atm (0.1 MPa) (for example, see Patent Reference 1).
- An object of the present invention is to provide an oxynitride phosphor having a higher emission luminance than a conventional rare earth activated sialon phosphor. Means for solving the problem
- the present inventors have determined that the elements of M, Si, A1, 0, and N (where M is La, Ce, Pr, Nd, Sm, Eu, G As a result of intensive studies on phosphors containing (d, Tb, Dy, Ho, Er, Tm, Yb, and Lu, one or more elements), a specific composition region was obtained. Those having a range and a crystalline phase were found to be phosphors having high luminance when excited by ultraviolet rays.
- the JEM phase having a composition represented by the following formula: Have been found to be phosphors having
- the JEM phase is a novel nitrogen-enriched substance that has been confirmed by Jekabs Grins et al. To form in the process of preparing ⁇ -sialon stabilized by a rare earth metal. It has already been reported in academic literature (see Non-Patent Document 1). According to this report, the JEM phase is represented by the general formula shown above, which is a crystalline phase having a composition, a unique atomic arrangement structure, and excellent heat resistance with z as a parameter. Its features are: a unique space group as described in Table 1 below (same as TabIe3 described in the above-mentioned Non-Patent Document, page 203); It is defined as a substance having a unique crystal structure and atomic arrangement structure characterized by its coordinates.
- the lattice constants in Table 1 change, the (1) crystal structure indicated by the P bc ⁇ space group, and (3) the sites occupied by atoms and the atomic positions given by their coordinates do not change.
- the crystal structure of the substance is uniquely determined by this, and the X-ray diffraction intensity (X-ray diffraction chart) of the crystal structure ) Can be calculated based on this data.
- Table 1 is a reference and important in specifying the JEM layer.
- the method for identifying substances based on Table 1 will be specifically described in Example 1 below. Here, only a brief explanation is given.
- the site symbol is a symbol indicating the symmetry of the space group. Coordinates take values from 0 to 1 for the X, y, z grid. M represents S i or A 1, and X represents O or N.
- This JEM phase is mainly based on research reports on heat resistance properties, even from the background confirmed in the research process of Sialon, and its use as a phosphor has never been considered before. .
- the present inventors have found for the first time that the JEM phase can be used as a phosphor having high luminance when excited by ultraviolet light or an electron beam.
- the present inventors have further developed this finding, and as a result of intensive research, as a result of adopting the configurations described in the following (1) to (29), a unique light emission phenomenon excellent in luminance characteristics in a specific wavelength region has been achieved. It is found that there is.
- the present invention has been made as a result of a series of researches based on the above findings, and provides an oxynitride phosphor that emits light with high luminance, a lighting device using the phosphor, and a light emitting device of an image display device. It has been successfully provided.
- At least two elements La and Eu are contained, and the content ratio of La and Eu (ratio of the number of atoms in the composition) is 0.0 1 ⁇ Eu / La ⁇ 1 (1), (2), (3), (5), ((8), (9), (10), (13) )
- the oxynitride phosphor according to any one of the above items.
- the oxynitride phosphor according to any one of (10), (14), and (15).
- the maximum emission wavelength in the fluorescence spectrum is 420 nm or more and 500 nm or less, and the maximum excitation wavelength in the excitation spectrum is 250 nm or more and 400 nm.
- the oxynitride phosphor according to any one of the above items (4), (11), (12), and (16), wherein:
- the maximum emission wavelength is 480 nm or more and 560 nm or less in the fluorescence spectrum, and the maximum excitation wavelength is 200 nm or more and 300 nm or less in the excitation spectrum.
- a lighting device comprising a light-emitting light source and a phosphor, wherein at least the phosphor according to any one of the above items (1) to (22) is used.
- the light emitting source is an LED that emits light having a wavelength of 330 to 420 nm, and the phosphor according to any one of (22) and (33) to 42 A green phosphor that emits light with a wavelength of 5 2 0 11! 11 or more and 5 7 0 11 m or less, and an excitation light of 3 0 to 420 nm that is 5 0 70 nm or more 7 0 0 Either of the above items (23) or (24), characterized in that red light, green light and blue light are mixed to emit white light by using a red phosphor that emits light of nm or less. Lighting equipment according to paragraph 1.
- An image display device comprising an excitation source and a phosphor, wherein at least the phosphor according to any one of the above (1) to (22) is used.
- Display device is a fluorescent display tube (VFD), a field emission display
- the image display device is any one of a spray (FED), a plasma display panel (PDP), and a cathode ray tube (CRT).
- FED spray
- PDP plasma display panel
- CRT cathode ray tube
- the sialon phosphor obtained by the production method of the present invention has higher luminance than a conventional sialon phosphor, and has less material deterioration and lower luminance even when exposed to an excitation source. Therefore, it is suitable for applications such as VFD, FED, PDP, CRT, and white LED, and provides a novel and useful material in material design in this field.
- FIG. 1 is a view showing an X-ray diffraction chart of the oxynitride of the present invention (Example 1).
- FIG. 2 is a diagram showing an excitation and emission spectrum of the oxynitride of the present invention (Example 1).
- FIG. 3 is a diagram showing an excitation and emission spectrum of the oxynitride of the present invention (Example 3).
- FIG. 4 is a diagram showing an excitation and emission spectrum of the oxynitride of the present invention (Example 5).
- FIG. 5 is a diagram showing an excitation and emission spectrum of the oxynitride of the present invention (Example 8).
- Figure 6 Emission spectrum of the oxynitride of the present invention (Examples 14 to 24)
- FIG. 7 Schematic view of a lighting device (LED lighting device) according to the present invention. .
- FIG. 8 is a schematic diagram of an image display device (plasma display panel) according to the present invention. Explanation of reference numerals;
- Phosphor of the present invention have the general formula MA 1 (S i 6 ⁇ ⁇ ⁇ 1 ⁇ ) 10 ⁇ ⁇ ⁇ ⁇ ( however, ⁇ L a, C e, P r, N d, Sm, E u, G d , Tb, Dy, Ho, Er, Tm, Yb, Lu or one or more elements selected from the group consisting of: .
- the JEM phase which is a component of the oxynitride phosphor, contains as much as possible of high purity and is preferably composed of a single phase.
- the content of the JEM phase is 50% by mass or more in order to obtain high luminance.
- the range of the main component is such that the content of the JEM phase is at least 50% by mass or more.
- ⁇ in ⁇ ⁇ L La, Ce, Pr, Nd, Sm, Eu , Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu must contain one or more elements.
- La, Ce, and Nd are preferable because of a wide composition range for forming a JEM phase.
- J EM phase as host crystal, Mi (where Mi is Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, L One or a mixture of two or more elements selected from u) By dissolving the elements in the JEM matrix, these elements act as luminescent centers and exhibit fluorescent properties. However, it is also possible that the element for forming the parent and the element for the emission center are the same.
- the JEM phase of Ce corresponds to this, and the JEM phase of Ce alone can become a high-luminance phosphor without adding the emission center (M).
- La is a main element for forming a JEM phase, since a phosphor with high luminance can be obtained.
- at least the elements of La and Mi (where Mi is Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb,
- One or a mixture of two or more selected from Lu is selected to form a JEM phase.
- the JEM phase of La as a host crystal, (1) a phosphor whose emission center is Ce, (2) a phosphor whose emission center is Eu, and (3) a fluorescence whose emission center is Tb.
- Phosphors containing Ce and Tb and having Tb as the luminescent center have high luminance and emit various colors depending on the composition, so they can be appropriately combined and selected depending on the application.
- M having a JEM phase crystal structure where M is La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm , Yb, Lu
- the type of composition is not particularly limited as long as it is a substance composed of Si, Al, 0, and N.
- a phosphor having a high content ratio of J EIV [phase and a high luminance is obtained.
- the composition is represented by a composition formula M a S i bA l c OdN e.
- the value a is a metal element M (where M is La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, HoEr, Tm, Yb , Or one or more elements selected from the Lu force) and the total amount of these elements contained in the phosphor.
- M La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, HoEr, Tm, Yb , Or one or more elements selected from the Lu force
- the value a is 1.
- z and f are the quantities given by 0.1 ⁇ z ⁇ 3 and 0.7 ⁇ fI.3.
- f l. If the b value is out of this range, a stable JEM phase is not generated, and the emission intensity is reduced.
- z and f are the quantities given by 0.1 ⁇ z ⁇ 3 and 0.7 ⁇ g3.
- g l. If the b value is out of this range, a stable JEM phase will not be generated, and the emission intensity will decrease.
- z is the quantity expressed as 0.1 ⁇ z ⁇ 3 and 0.7 ⁇ h ⁇ 3.
- h l. If the b value is out of this range, a stable JEM phase will not be generated, and the emission intensity will decrease.
- z and i are the quantities shown as 0.1 z ⁇ 3 and 0.7 ⁇ i ⁇ 1.3.
- i 1. If the b value is out of this range, a stable JEM phase is not generated, and the emission intensity decreases. A phosphor that emits light with high luminance can be obtained in the above composition range.
- M is a composition containing at least two elements, La and Ce, in which the content ratio of La and Ce (the ratio of the number of atoms in the composition) is 0.01 ⁇ Ce / A composition such that L a ⁇ 10,
- M is a composition containing at least two elements, La and Eu, in which the content ratio of La and Eu (the ratio of the number of atoms in the composition) is 0.001 ⁇ Eu / A composition such that L a ⁇ 1,
- M is a composition containing at least two elements, La and Tb.
- the content ratio of La and Tb (the ratio of the number of atoms in the composition) is 0.01 ⁇ Tb / Composition where L a ⁇ 10;
- the content ratio (ratio of the number of atoms in the composition) of La, Ce, and Tb is 0.01 ⁇ (Ce + T b) composition where / L a ⁇ 10,
- the phosphor of the present invention has an excitation spectrum and a fluorescence spectrum that differ depending on the composition of the phosphor, and has various emission spectra by appropriately selecting and combining these. Can be set arbitrarily. The mode may be set to the required spectrum based on the application.
- the maximum emission wavelength is not less than 42 O nm and not more than 50 O nm, and the maximum excitation wavelength is in the excitation spectrum. Can be obtained which is excited by ultraviolet light having a wavelength of from 250 nm to 40 O nm and emits blue light.
- the maximum emission wavelength was 480 nm or more and 560 O nm or less, and the maximum excitation wavelength was 200 nm or more in the excitation spectrum.
- a phosphor that emits green light when excited by ultraviolet light having a wavelength of 100 nm or less can be obtained.
- the crystal phase is desirably composed of a single phase of the JEM phase, but may be composed of a mixture with another crystal phase or an amorphous phase as long as the characteristics do not deteriorate.
- the content of the JEM phase is 50% by mass or more in order to obtain high luminance.
- the content of the JEM phase is at least 50 mass as described above. / 0 or more.
- the content ratio of the JEM phase can be determined by X-ray diffraction measurement and the ratio of the intensity of the strongest peak of each phase.
- conductivity can be imparted to the phosphor by mixing an inorganic substance having conductivity.
- the conductive inorganic substance include oxides, oxynitrides, or nitrides containing one or more elements selected from Zn, Al, Ga, In, and Sn, or a mixture thereof. And mixtures thereof.
- the oxynitride phosphor obtained by the production method of the present invention has higher luminance than conventional sialon phosphor, and the luminance of the phosphor is less reduced when exposed to an excitation source, so that VFD, FED, PD Oxynitride phosphor suitable for P, CRT, white LED, etc.
- the lighting fixture of the present invention is configured using at least the light emitting source and the phosphor of the present invention.
- Lighting equipment includes LED lighting equipment and fluorescent lamps.
- an LED lighting apparatus uses the phosphor of the present invention, and the phosphor is referred to in the prior art, for example, Japanese Patent Application Laid-Open Nos. 5-152609, 7-939345, and Patent Publication
- it can be manufactured by applying a known method and means as described in, for example, Japanese Patent No. 2927279.
- the light source emits light having a wavelength of 100 to 500 nm, and in particular, an ultraviolet (or purple) LED light emitting element of 330 to 420 nm is preferable.
- These light-emitting elements include those made of nitride semiconductors such as GaN and InGaN, and can be a light-emitting light source that emits light of a predetermined wavelength by adjusting the composition.
- a lighting device that emits a desired color can be formed by using the phosphor of the present invention in combination with a phosphor having another light emitting property.
- Is in such a green phosphor is a combination of B a M g A l 1 0 O 1 7: E u, the Mn, is a red fluorescent body Y 2 O 3: include E u be able to.
- E u when the ultraviolet light emitted by the LED irradiates the phosphor, three colors of light, red, green, and blue, are emitted, and a mixture of these emits a white luminaire.
- Another approach is to use a 330 to 420 nm ultraviolet LED or purple LED light-emitting element and a yellow fluorescent light that is excited at this wavelength and has an emission peak at a wavelength between 550 nm and 600 nm.
- the image display device of the present invention comprises at least an excitation source and the phosphor of the present invention, and includes a fluorescent display tube (VFD), a field emission display (FED), a plasma display panel (PDP), and a cathode ray tube ( CRT). It has been confirmed that the phosphor of the present invention emits light when excited by vacuum ultraviolet light having a wavelength of 100 to 190 nm, ultraviolet light having a wavelength of 190 to 380 nm, or an electron beam.
- the image display device as described above can be configured by combining with the phosphor of the present invention.
- Formula L a 0.2 C e os S i 5 A 12 ⁇ 1. 5 ⁇ 8 .7 compound represented by (mixing composition of the raw material powder shown in Table 3, shown in Table 4 parameter calculation composition after reaction in Table 5)
- silicon nitride powder, aluminum nitride powder, lanthanum oxide and cerium oxide were added in amounts of 4% each. 8.66% by weight, 17.06% by weight, 27.12% by weight 0 /.
- ⁇ - Hexane is removed by a rotary evaporator, and the obtained mixture is molded by applying a pressure of 20 MPa using a mold to obtain a molded body having a diameter of 12 mm and a thickness of 5 mm.
- This compact was placed in a crucible made of boron nitride and set in a graphite resistance heating type electric furnace.
- the baking operation is performed by first setting the baking atmosphere to a vacuum using a diffusion pump and starting from room temperature.
- the emission intensity at the peak was 1787 counts. Since the count value changes depending on the measuring device and conditions, the unit is an arbitrary unit. That is, comparison can be made only in the present example and the comparative example measured under the same conditions.
- the emission characteristics of this powder due to electron beam excitation were observed with a SEM equipped with a force saddle luminescence (CL) detector. In this device, the visible light generated by irradiating an electron beam is guided through an optical fiber to a photomultiplier installed outside the device, so that the light is emitted by excitation with the electron beam. It is a device that can measure torque. This phosphor was confirmed to emit blue light of a wavelength of 43 nm when excited by an electron beam. Table 2;
- Example 3 (C e iS i 5 A 12 ⁇ . 5 ⁇ 8. 7) are those containing only C e as a rare earth, shows the spectrum shown in FIG. 3, a phosphor which emits blue light of 4 6 8 nm was gotten.
- Example 5 (L a o.sE U 0.2S i 5 A 1 2 Oi. 5 N 8 .7) is than also an emission center E u, indicate the spectrum shown in FIG. 4, 5 1 0 A phosphor emitting green light of 5550 nm was obtained.
- Example 8 (L a 0. 5 T b 0. 5 S i 5 A 1 2 ⁇ . 5 ⁇ 8. 7) is for an emission center T b, shows the spectrum shown in FIG. 5, A phosphor emitting green light was obtained. Comparative Example 13;
- An oxynitride powder was prepared in the same manner as in Example 1 except for the composition shown in Table 3.
- Raw material powders include silicon nitride powder (average particle size 0.5 in, oxygen content 0.93 wt%, mold content 92%), aluminum nitride powder (specific surface area 3.3 m 2 Zg , oxygen Content 0.79%), lanthanum oxide powder (purity 99.9%), europium oxide powder (purity 99.9%), aluminum oxide powder (purity 99.9%), and metal lanthanum Lanthanum nitride powder synthesized by nitriding iron (purity 99.9%) in ammonia, cerium nitride powder synthesized by nitriding metal cell in ammonia, and palladium metal in ammonia Europium nitride powder synthesized by nitriding with the above, and the above powder were used.
- the process of reducing, mixing, and filling the powder should be performed in a nitrogen atmosphere with a water content of 1 ppm or less and oxygen of 1 ppm or less.
- the operation was performed in a glove box that can be used.
- This mixed powder was put into a crucible made of boron nitride and set in an electric furnace of a graphite resistance heating system.
- the baking operation is performed by evacuating the baking atmosphere with a diffusion pump to a vacuum, heating from room temperature to 800 ° C. at a rate of 50,000 ° C./hour, and then purging at 800 ° C.
- the pressure was adjusted to IMP a by introducing 9% by volume of nitrogen, and the temperature was raised to 500.degree. C./hour to 190.degree. C. and held at 190.degree. C. for 2 hours.
- the obtained fired body was coarsely ground, and then ground by hand using a crucible and a mortar made of a silicon nitride sintered body, and sieved through a 30 ⁇ mesh to obtain a powder.
- the emission spectrum and excitation spectrum of this powder were measured using a fluorescence spectrophotometer, and the results are shown in Table 8. For Examples 14 to 24, the emission spectrum was measured. . The fluorescence is shown in Fig. 6. As a result of the fluorescence measurement, it was found that the phosphor had a blue or green color with a peak at a wavelength of 400 to 540 nm. %)
- Figure 7 shows a schematic structural diagram of a white LED as a lighting fixture.
- - ⁇ -Sialon A structure in which an Eu-based yellow phosphor is dispersed in a resin layer and covered on LED 2.
- the LED 2 When a current is applied to the conductive terminal, the LED 2 emits 405 nm light, which excites the blue and yellow phosphors to emit blue and yellow light, and the yellow and blue are mixed. Function as a lighting device that emits white light.
- the lighting device manufactured by the composition design different from the above-mentioned composition is shown.
- the phosphor of Example 24 of the present invention a green phosphor ( ⁇ & ⁇ 8 ⁇ 1 1 () ⁇ 17: ⁇ ⁇ , ⁇ ⁇ ) and red phosphor (L a 2 ⁇ , S: E u) is dispersed in a resin layer to a structure covered on the ultraviolet L ED with.
- the LED emits light of 380 nm, which excites red, green, and blue phosphors to emit red, green, and blue light. These lights are mixed to function as a lighting device that emits white light.
- a design example of an image display device using the phosphor of the present invention will be described.
- FIG. 8 is a schematic view showing the principle of a plasma display panel as an image display device.
- Red phosphor and a green phosphor of Example 24 of the present invention Z n 2 S i 0 4 : Mn
- blue phosphor B a Mg A l 1 C ) O 1 7: E u
- electrodes 14, 15, 16, and 17 When electrodes 14, 15, 16, and 17 are energized, vacuum ultraviolet rays are generated by Xe discharge in the cell, which excites the phosphor and emits red, green, and blue visible light. Is observed from the outside via the protective layer 20, the dielectric layer 19, and the glass substrate 22, and functions as an image display.
- the phosphor of the present invention emits blue or green light when irradiated with an electron beam, and thus functions as a phosphor for a CRT field emission display.
- the present invention provides a phosphor having a novel composition and a method for producing the same, which have never been seen before, thereby providing an excellent phosphor with high luminance and no deterioration. Things. Industrial applicability
- the nitride phosphor of the present invention emits light with higher luminance than conventional sialon and oxynitride phosphors, and has characteristics such that the luminance of the phosphor is less reduced and the material is less deteriorated even when exposed to an excitation source. It is a novel nitride phosphor suitably used for ED, PDP, CRT, white LED and the like. In the future, it is expected to be widely used in the material design of lighting devices, including various display devices.
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Abstract
Description
Claims
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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US10/561,264 US20070018567A1 (en) | 2003-08-22 | 2004-08-18 | Oxynitride phosphor and light-emitting instrument |
KR1020067000302A KR101102304B1 (ko) | 2003-08-22 | 2004-08-18 | 산질화물 형광체 및 발광기구 |
CN2004800240601A CN1839193B (zh) | 2003-08-22 | 2004-08-18 | 氧氮化物荧光体和发光器具 |
JP2005513337A JP5035818B2 (ja) | 2003-08-22 | 2004-08-18 | 酸窒化物蛍光体と発光器具 |
DE112004001533.2T DE112004001533B4 (de) | 2003-08-22 | 2004-08-18 | Leuchtbauelement und Bildanzeige enthaltend ein fluoreszierendes Oxynitridmaterial |
US12/078,822 US8007684B2 (en) | 2003-08-22 | 2008-04-07 | Oxynitride fluorescent material and light-emitting device |
US13/064,465 US8147718B2 (en) | 2003-08-22 | 2011-03-28 | Oxynitride fluorescent material and light-emitting device |
US13/344,187 US8394295B2 (en) | 2003-08-22 | 2012-01-05 | Oxynitride fluorescent material and light-emitting device |
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JP2003208409 | 2003-08-22 | ||
JP2003-208409 | 2003-08-22 |
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US10561264 A-371-Of-International | 2004-08-18 | ||
US12/078,822 Continuation US8007684B2 (en) | 2003-08-22 | 2008-04-07 | Oxynitride fluorescent material and light-emitting device |
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WO2005019376A1 true WO2005019376A1 (ja) | 2005-03-03 |
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JP (2) | JP5035818B2 (ja) |
KR (1) | KR101102304B1 (ja) |
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Cited By (32)
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JP2006232868A (ja) * | 2005-02-22 | 2006-09-07 | Sharp Corp | 酸窒化物蛍光体および半導体発光装置 |
JP2007070445A (ja) * | 2005-09-06 | 2007-03-22 | Sharp Corp | 発光装置 |
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WO2015080062A1 (ja) | 2013-11-29 | 2015-06-04 | 独立行政法人物質・材料研究機構 | 蛍光体、発光装置、画像表示装置、顔料および紫外線吸収剤 |
CN104479673B (zh) * | 2014-12-05 | 2016-05-04 | 有研稀土新材料股份有限公司 | 氮氧化物荧光粉及其制备方法和发光装置 |
CN104479673A (zh) * | 2014-12-05 | 2015-04-01 | 有研稀土新材料股份有限公司 | 氮氧化物荧光粉及其制备方法和发光装置 |
WO2020203234A1 (ja) | 2019-04-03 | 2020-10-08 | 国立研究開発法人物質・材料研究機構 | 蛍光体、その製造方法および発光素子 |
KR20210141557A (ko) | 2019-04-03 | 2021-11-23 | 코쿠리츠켄큐카이하츠호징 붓시쯔 자이료 켄큐키코 | 형광체, 그 제조 방법 및 발광 소자 |
WO2020261691A1 (ja) | 2019-06-27 | 2020-12-30 | 国立研究開発法人物質・材料研究機構 | 蛍光体、その製造方法および発光装置 |
WO2022244523A1 (ja) | 2021-05-21 | 2022-11-24 | 国立研究開発法人物質・材料研究機構 | 蛍光体、その製造方法、発光素子および発光装置 |
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US8147718B2 (en) | 2012-04-03 |
CN1839193A (zh) | 2006-09-27 |
CN1839193B (zh) | 2010-05-05 |
KR20060060656A (ko) | 2006-06-05 |
US8007684B2 (en) | 2011-08-30 |
US20110175519A1 (en) | 2011-07-21 |
DE112004001533B4 (de) | 2021-07-22 |
US20080265748A1 (en) | 2008-10-30 |
JP2011017004A (ja) | 2011-01-27 |
KR101102304B1 (ko) | 2012-01-03 |
US20070018567A1 (en) | 2007-01-25 |
JP5344488B2 (ja) | 2013-11-20 |
US20120099291A1 (en) | 2012-04-26 |
JP5035818B2 (ja) | 2012-09-26 |
US8394295B2 (en) | 2013-03-12 |
DE112004001533T5 (de) | 2006-06-08 |
JPWO2005019376A1 (ja) | 2006-11-09 |
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