WO2004046415A1 - 銅合金スパッタリングターゲット及び半導体素子配線 - Google Patents
銅合金スパッタリングターゲット及び半導体素子配線 Download PDFInfo
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- WO2004046415A1 WO2004046415A1 PCT/JP2003/013251 JP0313251W WO2004046415A1 WO 2004046415 A1 WO2004046415 A1 WO 2004046415A1 JP 0313251 W JP0313251 W JP 0313251W WO 2004046415 A1 WO2004046415 A1 WO 2004046415A1
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- WIPO (PCT)
- Prior art keywords
- copper alloy
- sputtering target
- alloy sputtering
- ppm
- copper
- Prior art date
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- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 54
- 238000005477 sputtering target Methods 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004544 sputter deposition Methods 0.000 claims abstract description 21
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 12
- 229910052709 silver Inorganic materials 0.000 claims abstract description 12
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 11
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 10
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 10
- 229910052737 gold Inorganic materials 0.000 claims abstract description 10
- 229910052738 indium Inorganic materials 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 238000001953 recrystallisation Methods 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910001362 Ta alloys Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 abstract description 47
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 46
- 229910052802 copper Inorganic materials 0.000 abstract description 45
- 239000000956 alloy Substances 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 17
- 229910045601 alloy Inorganic materials 0.000 abstract description 16
- 238000007747 plating Methods 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 230000015271 coagulation Effects 0.000 abstract 1
- 238000005345 coagulation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 37
- 230000000052 comparative effect Effects 0.000 description 33
- 239000010410 layer Substances 0.000 description 28
- 238000004220 aggregation Methods 0.000 description 25
- 230000002776 aggregation Effects 0.000 description 25
- 230000000694 effects Effects 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 230000003405 preventing effect Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000010100 anticoagulation Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000001198 high resolution scanning electron microscopy Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 229910017755 Cu-Sn Inorganic materials 0.000 description 2
- 229910017927 Cu—Sn Inorganic materials 0.000 description 2
- 241000797947 Paria Species 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000002744 anti-aggregatory effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000005242 forging Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- KNDAEDDIIQYRHY-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-(piperazin-1-ylmethyl)pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)CN1CCNCC1 KNDAEDDIIQYRHY-UHFFFAOYSA-N 0.000 description 1
- KVCQTKNUUQOELD-UHFFFAOYSA-N 4-amino-n-[1-(3-chloro-2-fluoroanilino)-6-methylisoquinolin-5-yl]thieno[3,2-d]pyrimidine-7-carboxamide Chemical compound N=1C=CC2=C(NC(=O)C=3C4=NC=NC(N)=C4SC=3)C(C)=CC=C2C=1NC1=CC=CC(Cl)=C1F KVCQTKNUUQOELD-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910017767 Cu—Al Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002429 anti-coagulating effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- -1 cohesion Substances 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/01—Alloys based on copper with aluminium as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/02—Alloys based on copper with tin as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a wiring material of a semiconductor device, particularly a copper alloy sputtering target and the same target which can form a stable and uniform seed layer without aggregation during copper electroplating, and which is excellent in sputtering film forming characteristics.
- a 1 (specific resistance 3. ⁇ ⁇ -cm) has been used as the wiring material for semiconductor devices, but copper wiring with a lower resistance (specific resistance about 1. 7 ⁇ ⁇ cm) along with finer wiring ) has been put to practical use.
- copper is often electroplated after a diffusion barrier layer such as Ta / Ta N is formed in the contact hole or the recess of the wiring groove.
- Sputtering of copper or copper alloy is generally performed as a base layer (seed layer) for this electroforming.
- high purity copper with a purity of 5 N to 6 N is produced by wet or dry high purification process using electrolytic copper with a purity of about 4 N (gas component excluded) as a crude metal, and this is used as a sputtering target Was.
- electrolytic copper with a purity of about 4 N (gas component excluded) as a crude metal
- the thickness of the seed layer is an extremely thin film of 1 OO nm or less.
- the seed layer is formed of a 6 N pure copper target, there is a problem that aggregation occurs and a good seed layer can not be formed.
- the uniform formation of the underlayer is important, and when the underlayer is coagulated, the uniform film can not be formed when the copper film is formed by electric plating. For example, during wiring, defects such as poid, Hirox, or disconnection may be formed. Further, even if defects such as the above-mentioned voids are not left, a problem arises that the electorite migration resistance is lowered because an uneven electrodeposition structure of copper is formed in this portion.
- the wiring material of the semiconductor element in particular, a copper alloy which can form a stable and uniform seed layer without aggregation during copper electroplating can not be obtained, which is not necessarily sufficient.
- the present invention relates to a wiring material of a semiconductor element, and more particularly to a copper alloy sputtering target and a copper alloy sputtering target which can form a stable and uniform seed layer without aggregation during copper electroplating, and which is excellent in sputter deposition characteristics. It is an object of the present invention to provide a semiconductor element wiring formed by using a crucible.
- the inventors of the present invention conducted intensive studies, and as a result, by adding an appropriate amount of metal element, generation of defects such as voids, nicks, or broken lines at the time of copper electric plating.
- the copper alloy sputtering target and the target can be used to form a stable and uniform seed layer that can be prevented, have a low specific resistance, and have resistance to electromigration and oxidation.
- the present invention is based on this finding.
- a copper alloy sputtering target characterized in that it contains 0.5 to 4.0 wt% of A 1 and 31 is less than 0.5 wt p m
- a copper alloy sputtering target characterized by containing 0.5 to 4.0 wt% of Sn and having Mn of not more than 0.5 wt ppm.
- the semiconductor element wiring according to the above-mentioned 12 characterized in that it is formed as a seed layer of semiconductor wiring.
- the copper alloy sputtering target of the present invention contains 0.5 to 4. Owt% of A 1 and 0.5 wt ppm or less of 31 and is particularly free of aggregation when copper electroplated, and is rich in oxidation resistance, A stable and uniform seed layer can be formed. In addition, it has excellent sputter deposition characteristics and is useful as a wiring material for semiconductor devices.
- the alloy can effectively prevent aggregation during plating by containing 8.5 to 4. Ow t% of this alloy. That is, the wettability with the barrier film is improved.
- Si improves the oxidation resistance.
- Si itself has no anticoagulation effect, and if it exceeds 5 wt ppm, the anticoagulant effect of A1 is reduced, so it is necessary to make it 0.5 wt ppm or less.
- component management of Si is important because Si is mixed from A 1 as a dissolving material.
- the copper alloy sputtering target of the present invention contains a total of one or two or more selected from Sb, Zr, Ti, Cr, Ag, Cd, In and As in a total amount of 1. Owt ppm or less Can.
- the preferable addition amount is 0.5 wt ppm or less in total.
- the copper alloy sputtering target of the present invention contains 0.5 to 4.Ow t% of Sn and 0.5 wt ppm or less of Mn, and in particular, there is no cohesion during copper electroplating and oxidation resistance It is possible to form a stable and uniform seed layer. In addition, it has excellent sputter deposition characteristics and is useful as a wiring material for semiconductor devices.
- the present alloy can effectively prevent aggregation during plating by containing 0.5 to 4. O wt% of Sn. That is, the wettability with the barrier film is improved.
- Mn improves the oxidation resistance.
- Mn itself has no anticoagulation effect, and if it exceeds 5 wt ppm, it will reduce the antiaggregation effect of Sn, so it is necessary to make it less than 0.5 wt ppm.
- component control of Mn is important.
- the copper alloy sputtering target of the present invention contains a total of one or two or more selected from Sb, Zr, Ti, Cr, Ag, Au, Cd, In, As in a total amount of 1. Owt ppm or less be able to.
- the copper alloy sputtering target of the present invention desirably has a recrystallization temperature of 365 ° C. or less.
- the recrystallization temperature exceeds 365 ° C, and the temperature for securing the thermal stability of the plating film becomes higher, which makes it easy to aggregate, that is, the interaction (wettability) with the barrier layer is reduced. There is a drawback.
- the recrystallization temperature after annealing at 800 ° C, cold work the sample by 70%, and further hold it at 100 to 600 ° C for 30 minutes to measure the Pickers hardness (micro rickers, load 100 g)
- the term is used to mean a temperature located at an intermediate Hv value between the Hv of the material and the Hv before the material (after 70% cold working).
- oxygen be 5 wtppm or less and oxygen be lwtppm or less. The presence of oxygen acts to refine the texture of the duvet, but it forms inclusions at grain boundaries to cause the generation of particles, and in particular, sudden particle generation during spattering life. It is desirable to reduce as much as possible because there is a problem of causing it.
- the copper alloy sputtering target of the present invention preferably has an average crystal grain size of 0.1 to 60 m and a variation of the average grain size of less than 20% of the soil.
- the film life uniformity film thickness uniformity
- the uniformity of the film composition can be improved.
- the film uniformity becomes more important as the wafer size exceeds 300 mm.
- the copper alloy sputtering targets A 1 and Sn according to the present invention may be contained in a total amount of 0.5 to 4. O w t%. The amount of each component added is the same as above.
- the copper alloy sputtering target of the present invention is useful in the manufacture of semiconductor element wiring, particularly in formation of a seed layer for semiconductor wiring, and further, seed on a barrier film of Ta, Ta alloy or nitrides thereof. Best for layer formation.
- the copper alloy sputtering target of the present invention can be manufactured, for example, by the following steps.
- the ingot produced is subjected to hot forging, hot rolling, cold rolling, and heat treatment to remove the surface layer, and used as the target material.
- the target material is machined into a predetermined shape and joined with a backing plate to obtain a target product.
- High purity copper with a purity of 6 N or more The same level as high purity A1, Sn, Mn, and other added elements are adjusted and dissolved in a high vacuum atmosphere by cold crucible melting of water-cooled copper crucible. Got the alloy.
- the alloy composition of the adjusted example 10 is shown in Table 1 for the Cu-Al alloy system and in Table 2 for the Cu-Sn alloy.
- a copper plate of 6 N purity was placed at the bottom of the crucible to reduce contamination by contact with the molten metal.
- the alloyed molten metal was immersed in a water-cooled copper crucible in a high vacuum atmosphere to obtain an ingot.
- a sputtered film 5 nm thick was formed on an 8-inch TaNZTa / Si substrate.
- the degree of aggregation of the sputtering film was observed with a high resolution SEM.
- sputter deposition was performed to a thickness of about 500 nm on a Si substrate to measure the uniformity of the film.
- the oxygen content is low and the recrystallization temperature is also low.
- the average grain size is also 60 m or less, and the variation of the average grain size is within 20%.
- Example 7 0.93 wt% Sn 1 0.20 0.28 ⁇ 1 325 42 15 13 13
- Example 8 3.67 t% Sn 1 0.20 0.35 ⁇ 1 365 34 16 14 14
- Example 9 4.0 wt% Sn-0.35 0.33 5 365 29 9 ⁇ 16
- Example 10 3.67 wt% Sn one piece 0.01 ⁇ 1 365 52 18 18 Comparative example 11 0.1 t% Sn-0.10 0.16 part 1 320 61 18 X 11 Comparative example 12 10 wt% Sn one 0.85.
- Example 11 Under the same production conditions as in Example 10, with respect to materials having similar alloy components but being out of the scope of the present invention, copper alloys with different alloy components and with different grain sizes and variations are respectively used. The target was made.
- the degree of aggregation of this sputtered film was observed with a high resolution SEM.
- sputter deposition was performed to a thickness of about 500 nm on a Si substrate to measure the film uniformity.
- the aggregation preventing effect is low when A 1 is less than 0.5 wt%.
- a 1 exceeds 4.0 wt%, S i increases, the recrystallization temperature is high, and the aggregation preventing effect is low.
- Comparative Example 5 when the Si is high (more than 0.5 ppm), the aggregation preventing effect is reduced.
- Comparative Example 7 has a high oxygen content and a low aggregation preventing effect.
- Comparative Example 8 although the oxygen content is high and the recrystallization temperature is also high, the aggregation prevention effect is further deteriorated.
- Comparative Example 9 the variation in particle diameter is large and the uniformity of the film thickness is poor.
- Comparative Example 10 the particle size is large and the uniformity of the film is similarly poor.
- Comparative Example 11 the Sn content is less than 0.5 wt%, and the aggregation preventing effect is low.
- Comparative Example 12 the Sn content exceeds 4.0% at the same time, the Mn is increased, the recrystallization temperature is also high, and the aggregation preventing effect is poor.
- Comparative Example 13 when the content of Mn is high, the aggregation preventing effect is reduced.
- Comparative Example 14 since the content of Mn is also high, the aggregation preventing effect is reduced. Further, in Comparative Example 15, the variation of the particle diameter is large and the uniformity of the film thickness is getting worse. In Comparative Example 16, the particle size is large and the uniformity of the film is similarly poor. (Comparative example 1 7-2 5)
- Example 10 Under the same production conditions as in Example 10, copper alloy targets were produced for pure copper or copper alloy materials other than the present invention (using conventional copper materials). This condition is shown in Table 3.
- a sputtered film of 50 nm thickness was formed on an 8-inch TaN / TaZSi substrate.
- the degree of aggregation of the sputtering film was observed by high resolution SEM.
- sputter film deposition was performed to a thickness of about 500 nm on a Si substrate, and the film uniformity was measured.
- Comparative example 20 8N pure copper-- ⁇ 0.01 ⁇ 1 140 112 40 ⁇ 22 Comparative example 21 1.0 wt% Ti 0.12-0.18 ⁇ 1 495 19 9 X 13 Comparative example 22 1.0 wt% MR 0.18-0.56 ⁇ 1 300 31 15 ⁇ 15 Comparative Example 2.3 1.0 wt% Si--0.29 ⁇ 1 310 26 16 X 12 Comparative Example 24 1.0 wt% Zr 0.13-0.18 Less than 1 550 35 19 X 16 Comparative Example 25 1.0 wt% Ni 0.16 One 0.23. ⁇ 1 250 29 14 ⁇ 11
- the present invention relates to a wiring material for a semiconductor element, particularly a copper alloy sputtering target which can form a stable and uniform seed layer without aggregation when copper electroplated, and which is excellent in sputter deposition characteristics. It has the excellent effect of being able to obtain the semiconductor element wiring formed by
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/530,438 US7507304B2 (en) | 2002-11-21 | 2003-10-16 | Copper alloy sputtering target and semiconductor element wiring |
EP03756653A EP1584706B1 (en) | 2002-11-21 | 2003-10-16 | Copper alloy sputtering target and semiconductor element wiring |
US12/367,581 US20090140430A1 (en) | 2002-11-21 | 2009-02-09 | Copper Alloy Sputtering Target and Semiconductor Element Wiring |
US12/367,572 US8246764B2 (en) | 2002-11-21 | 2009-02-09 | Copper alloy sputtering target and semiconductor element wiring |
US15/926,022 US10665462B2 (en) | 2002-11-21 | 2018-03-20 | Copper alloy sputtering target and semiconductor element wiring |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-337341 | 2002-11-21 | ||
JP2002337341A JP4794802B2 (ja) | 2002-11-21 | 2002-11-21 | 銅合金スパッタリングターゲット及び半導体素子配線 |
Related Child Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/530,438 A-371-Of-International US7507304B2 (en) | 2002-11-21 | 2003-10-16 | Copper alloy sputtering target and semiconductor element wiring |
US10530438 A-371-Of-International | 2003-10-16 | ||
US12/367,581 Division US20090140430A1 (en) | 2002-11-21 | 2009-02-09 | Copper Alloy Sputtering Target and Semiconductor Element Wiring |
US12/367,572 Division US8246764B2 (en) | 2002-11-21 | 2009-02-09 | Copper alloy sputtering target and semiconductor element wiring |
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WO2004046415A1 true WO2004046415A1 (ja) | 2004-06-03 |
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PCT/JP2003/013251 WO2004046415A1 (ja) | 2002-11-21 | 2003-10-16 | 銅合金スパッタリングターゲット及び半導体素子配線 |
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US (4) | US7507304B2 (ja) |
EP (2) | EP2309021B1 (ja) |
JP (1) | JP4794802B2 (ja) |
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Cited By (1)
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Cited By (1)
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CN110392909A (zh) * | 2017-04-13 | 2019-10-29 | 株式会社爱发科 | 液晶显示装置、有机el显示装置、半导体元件、布线膜、布线基板、靶材 |
Also Published As
Publication number | Publication date |
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JP4794802B2 (ja) | 2011-10-19 |
JP2004169136A (ja) | 2004-06-17 |
TWI328047B (ja) | 2010-08-01 |
EP1584706B1 (en) | 2011-02-16 |
US20180211841A1 (en) | 2018-07-26 |
EP1584706A4 (en) | 2008-08-27 |
TW200417617A (en) | 2004-09-16 |
EP2309021A1 (en) | 2011-04-13 |
US20050285273A1 (en) | 2005-12-29 |
US7507304B2 (en) | 2009-03-24 |
EP2309021B1 (en) | 2012-11-21 |
US20090139863A1 (en) | 2009-06-04 |
US20090140430A1 (en) | 2009-06-04 |
US8246764B2 (en) | 2012-08-21 |
US10665462B2 (en) | 2020-05-26 |
EP1584706A1 (en) | 2005-10-12 |
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