WO2004046415A1 - 銅合金スパッタリングターゲット及び半導体素子配線 - Google Patents
銅合金スパッタリングターゲット及び半導体素子配線 Download PDFInfo
- Publication number
- WO2004046415A1 WO2004046415A1 PCT/JP2003/013251 JP0313251W WO2004046415A1 WO 2004046415 A1 WO2004046415 A1 WO 2004046415A1 JP 0313251 W JP0313251 W JP 0313251W WO 2004046415 A1 WO2004046415 A1 WO 2004046415A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper alloy
- sputtering target
- alloy sputtering
- ppm
- copper
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/01—Alloys based on copper with aluminium as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/02—Alloys based on copper with tin as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/530,438 US7507304B2 (en) | 2002-11-21 | 2003-10-16 | Copper alloy sputtering target and semiconductor element wiring |
EP03756653A EP1584706B1 (en) | 2002-11-21 | 2003-10-16 | Copper alloy sputtering target and semiconductor element wiring |
US12/367,581 US20090140430A1 (en) | 2002-11-21 | 2009-02-09 | Copper Alloy Sputtering Target and Semiconductor Element Wiring |
US12/367,572 US8246764B2 (en) | 2002-11-21 | 2009-02-09 | Copper alloy sputtering target and semiconductor element wiring |
US15/926,022 US10665462B2 (en) | 2002-11-21 | 2018-03-20 | Copper alloy sputtering target and semiconductor element wiring |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-337341 | 2002-11-21 | ||
JP2002337341A JP4794802B2 (ja) | 2002-11-21 | 2002-11-21 | 銅合金スパッタリングターゲット及び半導体素子配線 |
Related Child Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10530438 A-371-Of-International | 2003-10-16 | ||
US10/530,438 A-371-Of-International US7507304B2 (en) | 2002-11-21 | 2003-10-16 | Copper alloy sputtering target and semiconductor element wiring |
US12/367,572 Division US8246764B2 (en) | 2002-11-21 | 2009-02-09 | Copper alloy sputtering target and semiconductor element wiring |
US12/367,581 Division US20090140430A1 (en) | 2002-11-21 | 2009-02-09 | Copper Alloy Sputtering Target and Semiconductor Element Wiring |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004046415A1 true WO2004046415A1 (ja) | 2004-06-03 |
Family
ID=32321840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/013251 WO2004046415A1 (ja) | 2002-11-21 | 2003-10-16 | 銅合金スパッタリングターゲット及び半導体素子配線 |
Country Status (5)
Country | Link |
---|---|
US (4) | US7507304B2 (ja) |
EP (2) | EP1584706B1 (ja) |
JP (1) | JP4794802B2 (ja) |
TW (1) | TW200417617A (ja) |
WO (1) | WO2004046415A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110392909A (zh) * | 2017-04-13 | 2019-10-29 | 株式会社爱发科 | 液晶显示装置、有机el显示装置、半导体元件、布线膜、布线基板、靶材 |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1471164B1 (en) * | 2002-01-30 | 2013-01-23 | JX Nippon Mining & Metals Corporation | Copper alloy sputtering target and method for manufacturing the target |
JP4794802B2 (ja) | 2002-11-21 | 2011-10-19 | Jx日鉱日石金属株式会社 | 銅合金スパッタリングターゲット及び半導体素子配線 |
CN100439558C (zh) * | 2003-03-17 | 2008-12-03 | 日矿金属株式会社 | 铜合金溅射靶、其制造方法以及半导体元件布线 |
EP1715077A4 (en) * | 2003-12-25 | 2010-09-29 | Nippon Mining Co | ARRANGEMENT OF COPPER OR COPPER ALLOY STARGET AND COPPER ALLOY CARRIER PLATE |
WO2005073434A1 (ja) * | 2004-01-29 | 2005-08-11 | Nippon Mining & Metals Co., Ltd. | 超高純度銅及びその製造方法 |
JP4377788B2 (ja) * | 2004-09-27 | 2009-12-02 | 株式会社神戸製鋼所 | 半導体配線用Cu合金、Cu合金配線の製法、該製法で得られたCu合金配線を有する半導体装置、並びに半導体のCu合金配線形成用スパッタリングターゲット |
JP3816091B1 (ja) | 2005-03-02 | 2006-08-30 | シャープ株式会社 | 半導体装置及びその製造方法 |
EP1903119B1 (en) * | 2005-06-15 | 2015-09-23 | JX Nippon Mining & Metals Corporation | A method of manufacturing high purity copper |
WO2006137240A1 (ja) * | 2005-06-23 | 2006-12-28 | Nippon Mining & Metals Co., Ltd. | プリント配線板用銅箔 |
WO2007100125A1 (ja) * | 2006-02-28 | 2007-09-07 | Advanced Interconnect Materials, Llc | 半導体装置、その製造方法およびその製造方法に用いるスパッタリング用ターゲット材 |
US20070251819A1 (en) * | 2006-05-01 | 2007-11-01 | Kardokus Janine K | Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets |
US20070251818A1 (en) * | 2006-05-01 | 2007-11-01 | Wuwen Yi | Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets |
US7749361B2 (en) * | 2006-06-02 | 2010-07-06 | Applied Materials, Inc. | Multi-component doping of copper seed layer |
US20100000860A1 (en) * | 2006-09-08 | 2010-01-07 | Tosoh Smd, Inc. | Copper Sputtering Target With Fine Grain Size And High Electromigration Resistance And Methods Of Making the Same |
WO2008041535A1 (en) * | 2006-10-03 | 2008-04-10 | Nippon Mining & Metals Co., Ltd. | Cu-Mn ALLOY SPUTTERING TARGET AND SEMICONDUCTOR WIRING |
US8702919B2 (en) | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
KR101058765B1 (ko) | 2008-09-30 | 2011-08-24 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 고순도 구리 및 전해에 의한 고순도 구리의 제조 방법 |
US9441289B2 (en) * | 2008-09-30 | 2016-09-13 | Jx Nippon Mining & Metals Corporation | High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film |
WO2013038983A1 (ja) | 2011-09-14 | 2013-03-21 | Jx日鉱日石金属株式会社 | 高純度銅マンガン合金スパッタリングターゲット |
JPWO2013047199A1 (ja) | 2011-09-30 | 2015-03-26 | Jx日鉱日石金属株式会社 | スパッタリングターゲット及びその製造方法 |
KR101620762B1 (ko) | 2012-01-23 | 2016-05-12 | 제이엑스 킨조쿠 가부시키가이샤 | 고순도 구리 망간 합금 스퍼터링 타깃 |
JP5638697B2 (ja) | 2012-01-25 | 2014-12-10 | Jx日鉱日石金属株式会社 | 高純度銅クロム合金スパッタリングターゲット |
JP5554364B2 (ja) * | 2012-04-12 | 2014-07-23 | Jx日鉱日石金属株式会社 | 半導体用銅合金配線及びスパッタリングターゲット並びに半導体用銅合金配線の形成方法 |
KR20150023767A (ko) * | 2012-07-04 | 2015-03-05 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 스퍼터링 타겟 |
US10276356B2 (en) | 2013-03-07 | 2019-04-30 | Jx Nippon Mining & Metals Corporation | Copper alloy sputtering target |
JP6727749B2 (ja) | 2013-07-11 | 2020-07-22 | 三菱マテリアル株式会社 | 高純度銅スパッタリングターゲット用銅素材及び高純度銅スパッタリングターゲット |
US9761420B2 (en) | 2013-12-13 | 2017-09-12 | Praxair S.T. Technology, Inc. | Diffusion bonded high purity copper sputtering target assemblies |
JP6274525B2 (ja) * | 2014-08-04 | 2018-02-07 | 三菱マテリアル株式会社 | CuSnスパッタリングターゲット及びその製造方法 |
JP6398594B2 (ja) * | 2014-10-20 | 2018-10-03 | 三菱マテリアル株式会社 | スパッタリングターゲット |
WO2016132578A1 (ja) * | 2015-02-19 | 2016-08-25 | 三井金属鉱業株式会社 | 銅基合金スパッタリングターゲット |
KR20170088418A (ko) | 2015-05-21 | 2017-08-01 | 제이엑스금속주식회사 | 구리 합금 스퍼터링 타겟 및 그 제조 방법 |
US10760156B2 (en) | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
JP2019108571A (ja) * | 2017-12-15 | 2019-07-04 | 三菱マテリアル株式会社 | CuNi合金スパッタリングターゲットおよびCuNi合金粉末 |
US11035036B2 (en) | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
CN114058897B (zh) * | 2021-11-25 | 2022-05-17 | 江苏科技大学 | 铜合金薄膜、基于铜合金薄膜服役后的保护层和制备方法 |
JP7194857B1 (ja) * | 2022-07-14 | 2022-12-22 | Jx金属株式会社 | フレキシブルプリント基板用銅箔、それを用いた銅張積層体、フレキシブルプリント基板、及び電子機器 |
JP7164752B1 (ja) * | 2022-07-14 | 2022-11-01 | Jx金属株式会社 | フレキシブルプリント基板用銅箔、それを用いた銅張積層体、フレキシブルプリント基板、及び電子機器 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61231131A (ja) * | 1985-04-05 | 1986-10-15 | Kobe Steel Ltd | 耐食性銅合金管 |
JPS6365039A (ja) * | 1986-09-08 | 1988-03-23 | Furukawa Electric Co Ltd:The | 電子電気機器用銅合金 |
US4822560A (en) * | 1985-10-10 | 1989-04-18 | The Furukawa Electric Co., Ltd. | Copper alloy and method of manufacturing the same |
JPH06177117A (ja) | 1992-12-07 | 1994-06-24 | Japan Energy Corp | スパッタターゲットとこれを使用する半導体装置の製造方法 |
JPH1060633A (ja) | 1996-08-16 | 1998-03-03 | Dowa Mining Co Ltd | スパッタリングターゲットならびに半導体素子及びそれらの製造方法 |
JP2002294438A (ja) * | 2001-04-02 | 2002-10-09 | Mitsubishi Materials Corp | 銅合金スパッタリングターゲット |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3428442A (en) * | 1966-09-22 | 1969-02-18 | Eutectic Welding Alloys | Coated spray-weld alloy powders |
US3760146A (en) * | 1971-10-14 | 1973-09-18 | Chemetron Corp | Phosphor bronze arc welding electrode for alternating current |
JPS4923127A (ja) | 1972-06-26 | 1974-03-01 | ||
JPS5539144A (en) * | 1978-09-14 | 1980-03-18 | Nat Res Inst Metals | Method of fabricating nb3sn composite superconductor |
JPS60245754A (ja) | 1984-05-22 | 1985-12-05 | Nippon Mining Co Ltd | 高力高導電銅合金 |
EP0260906B1 (en) | 1986-09-17 | 1993-03-10 | Fujitsu Limited | Method of producing semiconductor device and semiconductor device |
JPS6460633A (en) | 1987-08-31 | 1989-03-07 | Tokuyama Soda Kk | Coating material |
JPH0196374A (ja) | 1987-10-05 | 1989-04-14 | Tanaka Kikinzoku Kogyo Kk | スパッタリング用クラッドターゲット材 |
JPH01123040A (ja) * | 1987-11-05 | 1989-05-16 | Furukawa Electric Co Ltd:The | 電気接続箱用ブスバー |
JPH01180976A (ja) | 1988-01-12 | 1989-07-18 | Tanaka Kikinzoku Kogyo Kk | スパッタリング用バッキングプレート |
JP2511289B2 (ja) * | 1988-03-30 | 1996-06-26 | 株式会社日立製作所 | 半導体装置 |
JPH0250432A (ja) | 1988-08-12 | 1990-02-20 | Toshiba Corp | 半導体装置 |
JPH02119140A (ja) | 1988-10-28 | 1990-05-07 | Seiko Epson Corp | 集積回路装置 |
JP2726939B2 (ja) * | 1989-03-06 | 1998-03-11 | 日鉱金属 株式会社 | 加工性,耐熱性の優れた高導電性銅合金 |
JP2552920B2 (ja) | 1989-08-11 | 1996-11-13 | 住友金属鉱山株式会社 | バッキングプレート用銅合金 |
JP2862727B2 (ja) | 1992-05-12 | 1999-03-03 | 同和鉱業株式会社 | 金属薄膜形成用スパッタリング・ターゲット並びにその製造方法 |
JPH06140398A (ja) | 1992-10-27 | 1994-05-20 | Kawasaki Steel Corp | 集積回路装置 |
EP0601509A1 (en) | 1992-12-07 | 1994-06-15 | Nikko Kyodo Co., Ltd. | Semiconductor devices and method of manufacturing the same |
DE19525330C2 (de) * | 1995-07-12 | 1998-07-09 | Glyco Metall Werke | Schichtwerkstoff |
US5853505A (en) * | 1997-04-18 | 1998-12-29 | Olin Corporation | Iron modified tin brass |
JP3403918B2 (ja) * | 1997-06-02 | 2003-05-06 | 株式会社ジャパンエナジー | 高純度銅スパッタリングタ−ゲットおよび薄膜 |
JPH10330927A (ja) | 1997-06-05 | 1998-12-15 | Riyouka Massey Kk | アルミニウム合金製スパッタリングターゲット材 |
US6569270B2 (en) | 1997-07-11 | 2003-05-27 | Honeywell International Inc. | Process for producing a metal article |
JP3975414B2 (ja) | 1997-11-28 | 2007-09-12 | 日立金属株式会社 | スパッタリング用銅ターゲットおよびその製造方法 |
JPH11186273A (ja) | 1997-12-19 | 1999-07-09 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
US6181012B1 (en) * | 1998-04-27 | 2001-01-30 | International Business Machines Corporation | Copper interconnection structure incorporating a metal seed layer |
JP2000034562A (ja) * | 1998-07-14 | 2000-02-02 | Japan Energy Corp | スパッタリングターゲット及び薄膜形成装置部品 |
JP2000087158A (ja) * | 1998-09-11 | 2000-03-28 | Furukawa Electric Co Ltd:The | 半導体リードフレーム用銅合金 |
JP2000208517A (ja) * | 1999-01-12 | 2000-07-28 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2000239836A (ja) | 1999-02-23 | 2000-09-05 | Japan Energy Corp | 高純度銅または銅合金スパッタリングターゲットおよびその製造方法 |
US6113761A (en) * | 1999-06-02 | 2000-09-05 | Johnson Matthey Electronics, Inc. | Copper sputtering target assembly and method of making same |
US6391163B1 (en) * | 1999-09-27 | 2002-05-21 | Applied Materials, Inc. | Method of enhancing hardness of sputter deposited copper films |
CN1425196A (zh) * | 1999-11-24 | 2003-06-18 | 霍尼韦尔国际公司 | 导电互连 |
JP4005295B2 (ja) | 2000-03-31 | 2007-11-07 | 富士通株式会社 | 半導体装置の製造方法 |
US6228759B1 (en) | 2000-05-02 | 2001-05-08 | Advanced Micro Devices, Inc. | Method of forming an alloy precipitate to surround interconnect to minimize electromigration |
JP4460037B2 (ja) * | 2000-07-21 | 2010-05-12 | 古河電気工業株式会社 | 電気接続部材用銅合金の加工熱処理方法及び電気接続部材用銅合金 |
JP2002075995A (ja) * | 2000-08-24 | 2002-03-15 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US6482302B1 (en) * | 2000-10-13 | 2002-11-19 | Honeywell International Inc. | Container-shaped physical vapor deposition targets |
JP2002294437A (ja) | 2001-04-02 | 2002-10-09 | Mitsubishi Materials Corp | 銅合金スパッタリングターゲット |
EP1471164B1 (en) * | 2002-01-30 | 2013-01-23 | JX Nippon Mining & Metals Corporation | Copper alloy sputtering target and method for manufacturing the target |
JP4794802B2 (ja) * | 2002-11-21 | 2011-10-19 | Jx日鉱日石金属株式会社 | 銅合金スパッタリングターゲット及び半導体素子配線 |
CN100439558C (zh) * | 2003-03-17 | 2008-12-03 | 日矿金属株式会社 | 铜合金溅射靶、其制造方法以及半导体元件布线 |
EP1715077A4 (en) * | 2003-12-25 | 2010-09-29 | Nippon Mining Co | ARRANGEMENT OF COPPER OR COPPER ALLOY STARGET AND COPPER ALLOY CARRIER PLATE |
US20070209547A1 (en) | 2004-08-10 | 2007-09-13 | Nippon Mining & Metals Co., Ltd. | Barrier Film For Flexible Copper Substrate And Sputtering Target For Forming Barrier Film |
-
2002
- 2002-11-21 JP JP2002337341A patent/JP4794802B2/ja not_active Expired - Lifetime
-
2003
- 2003-10-16 EP EP03756653A patent/EP1584706B1/en not_active Expired - Lifetime
- 2003-10-16 EP EP10184839A patent/EP2309021B1/en not_active Expired - Lifetime
- 2003-10-16 WO PCT/JP2003/013251 patent/WO2004046415A1/ja active Application Filing
- 2003-10-16 US US10/530,438 patent/US7507304B2/en active Active
- 2003-10-21 TW TW092129114A patent/TW200417617A/zh not_active IP Right Cessation
-
2009
- 2009-02-09 US US12/367,572 patent/US8246764B2/en not_active Expired - Lifetime
- 2009-02-09 US US12/367,581 patent/US20090140430A1/en not_active Abandoned
-
2018
- 2018-03-20 US US15/926,022 patent/US10665462B2/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61231131A (ja) * | 1985-04-05 | 1986-10-15 | Kobe Steel Ltd | 耐食性銅合金管 |
US4822560A (en) * | 1985-10-10 | 1989-04-18 | The Furukawa Electric Co., Ltd. | Copper alloy and method of manufacturing the same |
JPS6365039A (ja) * | 1986-09-08 | 1988-03-23 | Furukawa Electric Co Ltd:The | 電子電気機器用銅合金 |
JPH06177117A (ja) | 1992-12-07 | 1994-06-24 | Japan Energy Corp | スパッタターゲットとこれを使用する半導体装置の製造方法 |
JPH1060633A (ja) | 1996-08-16 | 1998-03-03 | Dowa Mining Co Ltd | スパッタリングターゲットならびに半導体素子及びそれらの製造方法 |
JP2002294438A (ja) * | 2001-04-02 | 2002-10-09 | Mitsubishi Materials Corp | 銅合金スパッタリングターゲット |
Non-Patent Citations (3)
Title |
---|
"Electromigration and diffusion in pure Cu and Cu(Sn) alloy", MAT. RES. SOC. SYMP. PROC., vol. 427, 1996 |
C.H. HU ET AL.: "Materials Research Society", IBM |
See also references of EP1584706A4 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110392909A (zh) * | 2017-04-13 | 2019-10-29 | 株式会社爱发科 | 液晶显示装置、有机el显示装置、半导体元件、布线膜、布线基板、靶材 |
Also Published As
Publication number | Publication date |
---|---|
US20090140430A1 (en) | 2009-06-04 |
US7507304B2 (en) | 2009-03-24 |
US8246764B2 (en) | 2012-08-21 |
EP2309021A1 (en) | 2011-04-13 |
US10665462B2 (en) | 2020-05-26 |
EP1584706A1 (en) | 2005-10-12 |
TW200417617A (en) | 2004-09-16 |
JP4794802B2 (ja) | 2011-10-19 |
US20180211841A1 (en) | 2018-07-26 |
EP1584706A4 (en) | 2008-08-27 |
US20090139863A1 (en) | 2009-06-04 |
EP2309021B1 (en) | 2012-11-21 |
JP2004169136A (ja) | 2004-06-17 |
EP1584706B1 (en) | 2011-02-16 |
TWI328047B (ja) | 2010-08-01 |
US20050285273A1 (en) | 2005-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2004046415A1 (ja) | 銅合金スパッタリングターゲット及び半導体素子配線 | |
JP4223511B2 (ja) | 銅合金スパッタリングターゲット及びその製造方法並びに半導体素子配線 | |
JP4955008B2 (ja) | Cu−Mn合金スパッタリングターゲット及び半導体配線 | |
JP5068925B2 (ja) | スパッタリングターゲット | |
JP4118814B2 (ja) | 銅合金スパッタリングターゲット及び同ターゲットを製造する方法 | |
JP4790782B2 (ja) | 銅合金スパッタリングターゲット及び半導体素子配線 | |
KR20090051267A (ko) | 미세 그레인 사이즈 및 높은 전자 이동 저항성을 구비한 구리 스퍼터링 타겟 및 이를 제조하는 방법 | |
JP5722427B2 (ja) | 銅チタン合金製スパッタリングターゲット、同スパッタリングターゲットを用いて形成した半導体配線並びに同半導体配線を備えた半導体素子及びデバイス | |
US20070039817A1 (en) | Copper-containing pvd targets and methods for their manufacture | |
JP5893797B2 (ja) | 銅合金スパッタリングターゲット | |
JP2000034562A (ja) | スパッタリングターゲット及び薄膜形成装置部品 | |
JP5554364B2 (ja) | 半導体用銅合金配線及びスパッタリングターゲット並びに半導体用銅合金配線の形成方法 | |
JP5837202B2 (ja) | 高純度銅コバルト合金スパッタリングターゲット | |
JP5694503B2 (ja) | 自己拡散抑制機能を有するシード層及び自己拡散抑制機能を備えたシード層の形成方法 | |
JP2004193551A (ja) | 半導体装置配線シード層形成用銅合金スパッタリングターゲットおよび半導体装置配線シード層 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): CN US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2003756653 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10530438 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 2003756653 Country of ref document: EP |