WO2013047199A1 - スパッタリングターゲット及びその製造方法 - Google Patents
スパッタリングターゲット及びその製造方法 Download PDFInfo
- Publication number
- WO2013047199A1 WO2013047199A1 PCT/JP2012/073273 JP2012073273W WO2013047199A1 WO 2013047199 A1 WO2013047199 A1 WO 2013047199A1 JP 2012073273 W JP2012073273 W JP 2012073273W WO 2013047199 A1 WO2013047199 A1 WO 2013047199A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- target
- sputtering
- backing plate
- sputtering target
- flange portion
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D53/00—Making other particular articles
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/05—Alloys based on copper with manganese as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
Definitions
- the present invention relates to a sputtering target for forming a thin film of a semiconductor device.
- the present invention relates to a copper manganese alloy sputtering target having a self-diffusion suppression function for forming a semiconductor copper alloy wiring.
- an Al alloy (specific resistance: about 3.0 ⁇ ⁇ cm) has been used as a wiring material for semiconductor elements, but with the miniaturization of wiring, copper wiring with a lower resistance (specific resistance: 2.0 ⁇ ⁇ cm) Degree) has been put into practical use.
- a diffusion barrier layer such as Ta or TaN is formed in a wiring or a wiring groove, and then copper is formed by sputtering.
- copper having a purity of about 4N (excluding gas components) was used as a crude metal, and a high purity of 5N to 6N was produced by a wet or dry purification process and used as a sputtering target. .
- copper is very effective as a semiconductor wiring, but copper itself is easily diffused by a very active metal, and it contaminates the Si substrate or its surroundings through the semiconductor Si substrate or the insulating film thereon.
- a problem In particular, with the miniaturization of wiring, it is not sufficient to form a conventional diffusion barrier layer of Ta or TaN, and improvement of the copper wiring material itself is also required. Therefore, as a copper wiring material so far, manganese (Mn) is added to copper (Cu), and Mn in the Cu—Mn alloy reacts with oxygen in the insulating film to form a barrier layer in a self-forming manner.
- a copper alloy having a self-diffusion suppression function has been proposed (for example, Patent Document 1).
- the above sputtering target is usually bonded using a backing plate and a bonding material. After the target is used, it is necessary to stop the sputtering apparatus and replace the used target. In order to reduce the downtime as much as possible and reduce the manufacturing cost, the target and the backing plate It is required to increase the thickness of the target itself. However, such an integrated target has a drawback that the mechanical strength is insufficient and the target is deformed during the sputtering.
- Patent Document 2 in an integrally structured target in which a target and a backing plate are made of the same material, the target is plastically processed to increase mechanical strength.
- a technique that does not cause warping of the target even when sputtered at a high output is disclosed.
- the plastic working conditions are changed in order to increase the mechanical strength of the entire target, the sputtering characteristics of the target itself change, and there is a problem that desired product performance cannot be satisfied.
- Patent Document 3 discloses that coarse particles are formed by irradiating a laser to a non-erosion part of a sputtering target to form a depression, and reducing the hardness of the bottom surface of the depression compared to the hardness of the surface of the non-erosion part. A technique for preventing the occurrence of this is described. However, this softens the melted part by laser irradiation and reduces the hardness of the bottom of the dent compared to the surface of the non-erosion part. It increases the strength of the target and suppresses target deformation during sputtering. is not.
- JP 2006-73863 A Japanese Patent Laid-Open No. 2002-121661 JP-A-9-209133
- the sputtering target integrated with a backing plate by increasing the mechanical strength of only the flange portion of the target, it is possible to suppress the deformation of the target during sputtering, and without changing the conventional sputtering characteristics.
- it is possible to form a thin film with excellent uniformity (uniformity), and to improve the yield and reliability of semiconductor products that are becoming finer and highly integrated.
- it has a self-diffusion suppression function, can effectively prevent contamination around the wiring due to active Cu diffusion, and forms a copper alloy wiring for a semiconductor excellent in electromigration (EM) resistance, corrosion resistance, etc. It is an object of the present invention to provide a copper-manganese alloy sputtering target useful for the above.
- the backing plate-integrated sputtering target is characterized in that the Vickers hardness Hv in the flange portion is 90 or more and the 0.2% yield stress in the flange portion is 6.98 ⁇ 10 7 N / m 2 or more.
- Backing plate integrated sputtering target 2) The sputtering plate-integrated sputtering target according to 1) above, wherein the sputtering target and the backing plate are formed of a Cu—Mn alloy. 3) The backing plate-integrated sputtering target according to 2) above, wherein the (111) orientation ratio on the sputtering surface is 50% or less.
- a method for producing a backing plate-integrated sputtering target wherein after plastic processing of the target material, only the flange portion is further plastically processed, 5) The method for producing a backing plate-integrated sputtering target according to 4) above, wherein the sputtering target and the backing plate are formed of a Cu—Mn alloy.
- the sputtering plate integrated sputtering target of the present invention can suppress the deformation of the target during sputtering by increasing the mechanical strength only at the flange portion of the target, and further, without changing the conventional sputtering characteristics.
- it is possible to form a thin film having excellent uniformity (uniformity), and it is possible to improve the yield and reliability of semiconductor products that are becoming finer and highly integrated.
- a high-purity copper-manganese alloy sputtering target useful for the formation of copper alloy wiring for semiconductors it has a self-diffusion suppression function and can effectively prevent contamination around the wiring due to active Cu diffusion, It has excellent effects on electromigration (EM) resistance, corrosion resistance, and the like.
- EM electromigration
- the backing plate-integrated sputtering target means that the sputtering target and the backing plate are integrated and manufactured from the same material.
- the mechanical strength can be maintained by the backing plate, so that even if the mechanical strength is insufficient as in the present invention, the target is deformed (warped, etc.) during sputtering.
- the problem is not inherent. The problem of deformation becomes apparent when the sputtering target and the backing plate as in the present invention are integrated and given a sufficient thickness.
- the backing plate-integrated sputtering target has a Vickers hardness Hv at the flange portion of 90 or more and a 0.2% yield stress of 6.98 ⁇ 10 7 N / m 2 or more.
- the Vickers hardness Hv of the flange portion is less than 90 or the 0.2% yield stress is less than 6.98 ⁇ 10 7 N / m 2 , the mechanical strength of the entire target is not sufficient. Warping occurs and film thickness uniformity (uniformity) is lowered, which is not preferable.
- the flange portion is a joint portion for mounting the backing plate integrated target to the sputtering apparatus, and it is not planned that the flange portion itself is sputtered.
- the backing plate integrated sputtering target is preferably formed of a Cu—Mn alloy.
- the Cu—Mn alloy is useful for forming a copper alloy wiring for a semiconductor, has a self-diffusion suppression function, can effectively prevent contamination around the wiring due to active diffusion of Cu, and electromigration (EM ) Has excellent effects in resistance, corrosion resistance and the like.
- the Mn content is desirably 0.05 wt% or more and 20 wt% or more. If the Mn content is less than 0.05 wt%, the self-diffusion suppression function is reduced, and if the Mn content exceeds 20 wt%, the resistance increases and the function as a copper alloy wiring for a semiconductor decreases, which is not preferable. More preferably, the Mn content is 0.5 wt% or more and 10 wt% or less.
- the (111) orientation ratio on the sputtering surface of the backing plate integrated sputtering target made of a Cu—Mn alloy is 50% or less.
- the (111) orientation ratio exceeds 50%, the conventional sputtering characteristics cannot be obtained, and it is necessary to readjust the sputtering conditions.
- the production of the backing plate integrated sputtering target is performed by, for example, casting a metal or alloy obtained by melting to produce an ingot, forging the ingot at a predetermined forging ratio, and thereafter Rolled at a reduction ratio to obtain a rolled sheet.
- the outer peripheral portion (corresponding to the flange portion) of the rolled plate is forged (hammer, die forging, etc.) to increase the mechanical strength.
- Example 1 In Example 1, a melt-cast Cu—Mn alloy (Mn 1 wt%) ingot was forged and rolled to produce a rolled plate, and the outer peripheral portion (corresponding to the flange portion) of the rolled plate was further forged. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, a backing plate integrated sputtering target having a diameter of 540 mm and a thickness of 25 mm was manufactured by machining. When the physical properties of this target were evaluated, the Vickers hardness Hv of the flange portion was 98, the 0.2% yield stress of the flange portion was 7.25 ⁇ 10 7 N / m 2 , and (111) of the sputtering surface The orientation rate was 47.2%.
- Example 2 In Example 2, a melt-cast Cu—Mn alloy (Mn 1 wt%) ingot was forged and rolled to produce a rolled plate, and the outer peripheral portion (corresponding to the flange portion) of the rolled plate was further forged. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, a backing plate integrated sputtering target having a diameter of 540 mm and a thickness of 25 mm was manufactured by machining.
- Mn 1 wt% ingot was forged and rolled to produce a rolled plate, and the outer peripheral portion (corresponding to the flange portion) of the rolled plate was further forged. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, a backing plate integrated sputtering target having a diameter of 540 mm and a thickness of 25 mm was manufactured by machining.
- the Vickers hardness Hv of the flange portion was 95
- the 0.2% yield stress of the flange portion was 7.13 ⁇ 10 7 N / m 2
- (111) of the sputter surface The orientation rate was 48.0%.
- Example 3 In Example 3, a melt-cast Cu—Mn alloy (Mn 1 wt%) ingot was forged and rolled to produce a rolled plate, and the outer peripheral portion (corresponding to the flange portion) of the rolled plate was further forged. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, a backing plate integrated sputtering target having a diameter of 540 mm and a thickness of 25 mm was manufactured by machining.
- Mn 1 wt% ingot was forged and rolled to produce a rolled plate, and the outer peripheral portion (corresponding to the flange portion) of the rolled plate was further forged. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, a backing plate integrated sputtering target having a diameter of 540 mm and a thickness of 25 mm was manufactured by machining.
- the Vickers hardness Hv of the flange portion was 91
- the 0.2% yield stress of the flange portion was 6.98 ⁇ 10 7 N / m 2
- (111) of the sputtering surface The orientation rate was 48.9%.
- Example 4 In Example 4, a melt-cast Cu—Mn alloy (Mn 1 wt%) ingot was forged and rolled to produce a rolled plate, and the outer peripheral portion (corresponding to the flange portion) of the rolled plate was further forged. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, a backing plate integrated sputtering target having a diameter of 850 mm and a thickness of 25 mm was manufactured by machining.
- Mn 1 wt% ingot was forged and rolled to produce a rolled plate, and the outer peripheral portion (corresponding to the flange portion) of the rolled plate was further forged. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, a backing plate integrated sputtering target having a diameter of 850 mm and a thickness of 25 mm was manufactured by machining.
- the Vickers hardness Hv of the flange portion was 97
- the 0.2% yield stress of the flange portion was 7.24 ⁇ 10 7 N / m 2
- (111) of the sputtering surface The orientation rate was 47.1%.
- Example 5 In Example 5, a melt-cast Cu—Mn alloy (Mn 0.5 wt%) ingot was forged and rolled to produce a rolled plate, and the outer peripheral portion (corresponding to the flange portion) of the rolled plate was further forged. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, a backing plate integrated sputtering target having a diameter of 540 mm and a thickness of 25 mm was manufactured by machining.
- Mn 0.5 wt% ingot was forged and rolled to produce a rolled plate, and the outer peripheral portion (corresponding to the flange portion) of the rolled plate was further forged. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, a backing plate integrated sputtering target having a diameter of 540 mm and a thickness of 25 mm was manufactured by machining.
- the Vickers hardness Hv of the flange portion was 96
- the 0.2% yield stress of the flange portion was 7.31 ⁇ 10 7 N / m 2
- (111) of the sputtering surface The orientation rate was 48.2%.
- Example 6 a melt-cast Cu—Mn alloy (Mn 10 wt%) ingot was forged and rolled to produce a rolled plate, and the outer peripheral portion (corresponding to the flange portion) of the rolled plate was further forged. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, a backing plate integrated sputtering target having a diameter of 540 mm and a thickness of 25 mm was manufactured by machining.
- the Vickers hardness Hv of the flange portion was 96
- the 0.2% yield stress of the flange portion was 7.21 ⁇ 10 7 N / m 2
- (111) of the sputtering surface The orientation rate was 47.9%.
- Example 7 In Example 7, a melt-cast Cu—Mn alloy (Mn 15 wt%) ingot was forged and rolled to produce a rolled plate, and the outer peripheral portion (corresponding to the flange portion) of the rolled plate was further forged. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, a backing plate integrated sputtering target having a diameter of 540 mm and a thickness of 25 mm was manufactured by machining.
- Mn 15 wt% ingot was forged and rolled to produce a rolled plate, and the outer peripheral portion (corresponding to the flange portion) of the rolled plate was further forged. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, a backing plate integrated sputtering target having a diameter of 540 mm and a thickness of 25 mm was manufactured by machining.
- the Vickers hardness Hv of the flange portion was 95
- the 0.2% yield stress of the flange portion was 7.19 ⁇ 10 7 N / m 2
- (111) of the sputter surface The orientation rate was 48.3%.
- Comparative Example 1 a rolled plate was produced by forging and rolling a melt-cast Cu—Mn alloy (Mn 1 wt%) ingot. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, this was machined to obtain a backing plate integrated sputtering target having a diameter of 540 mm and a thickness of 25 mm. When the physical properties of this target were evaluated, the Vickers hardness Hv of the flange portion was 63, the 0.2% yield stress of the flange portion was 4.72 ⁇ 10 7 N / m 2 , and (111) of the sputtering surface The orientation rate was 55.3%.
- Comparative Example 2 In Comparative Example 2, a melt-cast Cu—Mn alloy (Mn 1 wt%) ingot was forged and rolled to produce a rolled sheet. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, this was machined to obtain a backing plate integrated sputtering target having a diameter of 540 mm and a thickness of 25 mm. When the physical properties of this target were evaluated, the Vickers hardness Hv of the flange portion was 51, the 0.2% yield stress of the flange portion was 3.92 ⁇ 10 7 N / m 2 , and (111) of the sputtering surface The orientation rate was 53.2%.
- Comparative Example 3 In Comparative Example 3, a melt-cast Cu—Mn alloy (Mn 1 wt%) ingot was forged and rolled to produce a rolled sheet. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, this was machined to obtain a backing plate integrated sputtering target having a diameter of 540 mm and a thickness of 25 mm. When the physical properties of this target were evaluated, the Vickers hardness Hv of the flange portion was 48, the 0.2% yield stress of the flange portion was 3.58 ⁇ 10 7 N / m 2 , and (111) of the sputter surface The orientation rate was 54.1%.
- Comparative Example 4 a melt-cast Cu—Mn alloy (Mn 1 wt%) ingot was forged and rolled to produce a rolled sheet. Next, this was heat-treated and then rapidly cooled to obtain a target material. Thereafter, this was machined to obtain a backing plate integrated sputtering target having a diameter of 850 mm and a thickness of 25 mm. When the physical properties of this target were evaluated, the Vickers hardness Hv of the flange portion was 62, the 0.2% yield stress of the flange portion was 4.70 ⁇ 10 7 N / m 2 , and (111) of the sputtering surface The orientation rate was 55.5%.
- the targets of Examples 1 to 3, 5 to 7, and Comparative Examples 1 to 3 were mounted on a sputtering apparatus, sputtered with an input power of 40 kW and an Ar gas pressure of 55 Pa, and the amount of warping of the target after sputtering was measured (Table 1). As shown in Table 1, the warpage amounts of the targets of Examples 1 to 3, 5 to 7 are 0.02 mm to 0.05 mm, and the warpage amounts of Comparative Examples 1 to 3 are 0.8 mm to 1.3 mm. Fewer targets were obtained. Moreover, the sheet resistance value of the formed thin film was measured, and the film thickness uniformity was calculated (Table 1).
- the thin films formed using the targets of Examples 1 to 3, 5 to 7 have a film thickness uniformity of 2.3% to 2.8%, and the targets of Comparative Examples 1 to 3 were used.
- the film thickness uniformity (uniformity) was better than the film thickness uniformity of 5.6% to 6.3%.
- Example 4 and Comparative Example 4 since the target diameter was large and could not be attached to the sputtering apparatus, the amount of warpage of the target after sputtering and the film thickness uniformity of the thin film could not be evaluated. However, the Vickers hardness, 0.2% yield stress, and (111) orientation ratio of the sputter surface of the flange portion of the target in Example 4 and Comparative Example 4 were the same as those of the other Examples and Comparative Examples, respectively. From this, it can be presumed that the same effects (the amount of warping of the target after sputtering and the film thickness uniformity) can be obtained.
- Example 5-7 even when the Mn content is changed within the range of 0.05 to 20 wt%, good target physical properties can be obtained, and the warpage amount and film thickness uniformity of the target after sputtering can be obtained. It was confirmed that it was obtained.
- the present invention provides a backing plate-integrated sputtering target.
- the backing plate-integrated sputtering target of the present invention has a self-diffusion suppression function, and can effectively prevent contamination around the wiring due to active Cu diffusion, in electromigration (EM) resistance, corrosion resistance, etc. It is useful for forming excellent copper-manganese alloy wiring for semiconductors.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
特には、自己拡散抑制機能を有し、活性なCuの拡散による配線周囲の汚染を効果的に防止することができる、エレクトロマイグレーション(EM)耐性、耐食性等に優れた半導体用銅合金配線の形成に有用な銅マンガン合金スパッタリングターゲットを提供することを課題とする。
1)バッキングプレート一体型スパッタリングターゲットにおいて、フランジ部におけるビッカース硬度Hvが90以上、かつ、フランジ部における0.2%降伏応力が6.98×107N/m2以上であることを特徴とするバッキングプレート一体型スパッタリングターゲット。
2)スパッタリングターゲットとバッキングプレートがCu-Mn合金で形成されていることを特徴とする上記1)に記載のバッキングプレート一体型スパッタリングターゲット。
3)スパッタ面における(111)配向率が50%以下であることを特徴とする上記2)に記載のバッキングプレート一体型スパッタリングターゲット。
4)ターゲット材を塑性加工した後、さらに、フランジ部のみを塑性加工することを特徴とするバッキングプレート一体型スパッタリングターゲットの製造方法、
5)スパッタリングターゲットとバッキングプレートがCu-Mn合金で形成されていることを特徴とする上記4)に記載のバッキングプレート一体型スパッタリングターゲットの製造方法、を提供する。
特には、半導体用銅合金配線の形成に有用な高純度銅マンガン合金スパッタリングターゲットにおいて、自己拡散抑制機能を有し、活性なCuの拡散による配線周囲の汚染を効果的に防止することができ、エレクトロマイグレーション(EM)耐性、耐食性等に優れた効果を有する。
フランジ部のビッカース硬さHvが90未満であり、又は、0.2%降伏応力が6.98×107N/m2未満では、ターゲット全体の機械的強度が十分でないため、スパッタリング中のターゲットに反りが発生して、膜厚均一性(ユニフォミーティ)を低下させるため、好ましくない。
さらに、この圧延板の外周部(フランジ部に相当)を鍛造(ハンマー、型鍛造など)して機械的強度を高める。本発明のターゲットを作製する場合、この圧延板の外周部を鍛造することが重要である。鍛造方法や鍛造条件を変更することによって、外周部の機械的強度を適宜調整することができる。しかし、最終的にビッカース硬度Hv90以上、0.2%降伏応力6.98×107N/m2以上の範囲に調整できれば、この鍛造工程に特に制限を課す必要はない。
次に、これを所定の温度及び時間で熱処理する。その後、仕上げ加工して、バッキングプレート一体型スパッタリングターゲットを製造する。
実施例1では、溶解鋳造したCu-Mn合金(Mn1wt%)インゴットを鍛造、圧延して圧延板を作製し、この圧延板の外周部(フランジ部に相当)をさらに鍛造した。次に、これを熱処理した後、急冷してターゲット素材を得た。その後、機械加工により、直径540mm、厚さ25mmのバッキングプレート一体型スパッタリングターゲットを製造した。このターゲットの物性を評価したところ、フランジ部のビッカース硬さHvは98であり、フランジ部の0.2%降伏応力は7.25×107N/m2であり、スパッタ面の(111)配向率は47.2%であった。
実施例2では、溶解鋳造したCu-Mn合金(Mn1wt%)インゴットを鍛造、圧延して圧延板を作製し、この圧延板の外周部(フランジ部に相当)をさらに鍛造した。次に、これを熱処理した後、急冷してターゲット素材を得た。その後、機械加工により、直径540mm、厚さ25mmのバッキングプレート一体型スパッタリングターゲットを製造した。このターゲットの物性を評価したところ、フランジ部のビッカース硬さHvは95であり、フランジ部の0.2%降伏応力は7.13×107N/m2であり、スパッタ面の(111)配向率は48.0%であった。
実施例3では、溶解鋳造したCu-Mn合金(Mn1wt%)インゴットを鍛造、圧延して圧延板を作製し、この圧延板の外周部(フランジ部に相当)をさらに鍛造した。次に、これを熱処理した後、急冷してターゲット素材を得た。その後、機械加工により、直径540mm、厚さ25mmのバッキングプレート一体型スパッタリングターゲットを製造した。このターゲットの物性を評価したところ、フランジ部のビッカース硬さHvは91であり、フランジ部の0.2%降伏応力は6.98×107N/m2であり、スパッタ面の(111)配向率は48.9%であった。
実施例4では、溶解鋳造したCu-Mn合金(Mn1wt%)インゴットを鍛造、圧延して圧延板を作製し、この圧延板の外周部(フランジ部に相当)をさらに鍛造した。次に、これを熱処理した後、急冷してターゲット素材を得た。その後、機械加工により、直径850mm、厚さ25mmのバッキングプレート一体型スパッタリングターゲットを製造した。このターゲットの物性を評価したところ、フランジ部のビッカース硬さHvは97であり、フランジ部の0.2%降伏応力は7.24×107N/m2であり、スパッタ面の(111)配向率は47.1%であった。
実施例5では、溶解鋳造したCu-Mn合金(Mn0.5wt%)インゴットを鍛造、圧延して圧延板を作製し、この圧延板の外周部(フランジ部に相当)をさらに鍛造した。次に、これを熱処理した後、急冷してターゲット素材を得た。その後、機械加工により、直径540mm、厚さ25mmのバッキングプレート一体型スパッタリングターゲットを製造した。このターゲットの物性を評価したところ、フランジ部のビッカース硬さHvは96であり、フランジ部の0.2%降伏応力は7.31×107N/m2であり、スパッタ面の(111)配向率は48.2%であった。
実施例6では、溶解鋳造したCu-Mn合金(Mn10wt%)インゴットを鍛造、圧延して圧延板を作製し、この圧延板の外周部(フランジ部に相当)をさらに鍛造した。次に、これを熱処理した後、急冷してターゲット素材を得た。その後、機械加工により、直径540mm、厚さ25mmのバッキングプレート一体型スパッタリングターゲットを製造した。このターゲットの物性を評価したところ、フランジ部のビッカース硬さHvは96であり、フランジ部の0.2%降伏応力は7.21×107N/m2であり、スパッタ面の(111)配向率は47.9%であった。
実施例7では、溶解鋳造したCu-Mn合金(Mn15wt%)インゴットを鍛造、圧延して圧延板を作製し、この圧延板の外周部(フランジ部に相当)をさらに鍛造した。次に、これを熱処理した後、急冷してターゲット素材を得た。その後、機械加工により、直径540mm、厚さ25mmのバッキングプレート一体型スパッタリングターゲットを製造した。このターゲットの物性を評価したところ、フランジ部のビッカース硬さHvは95であり、フランジ部の0.2%降伏応力は7.19×107N/m2であり、スパッタ面の(111)配向率は48.3%であった。
比較例1では、溶解鋳造したCu-Mn合金(Mn1wt%)インゴットを鍛造、圧延して圧延板を作製した。次に、これを熱処理した後、急冷してターゲット素材を得た。その後、これを機械加工して、直径540mm、厚さ25mmのバッキングプレート一体型スパッタリングターゲットとした。このターゲットの物性を評価したところ、フランジ部のビッカース硬さHvは63であり、フランジ部の0.2%降伏応力は4.72×107N/m2であり、スパッタ面の(111)配向率は55.3%であった。
比較例2では、溶解鋳造したCu-Mn合金(Mn1wt%)インゴットを鍛造、圧延して圧延板を作製した。次に、これを熱処理した後、急冷してターゲット素材を得た。その後、これを機械加工して、直径540mm、厚さ25mmのバッキングプレート一体型スパッタリングターゲットとした。このターゲットの物性を評価したところ、フランジ部のビッカース硬さHvは51であり、フランジ部の0.2%降伏応力は3.92×107N/m2であり、スパッタ面の(111)配向率は53.2%であった。
比較例3では、溶解鋳造したCu-Mn合金(Mn1wt%)インゴットを鍛造、圧延して圧延板を作製した。次に、これを熱処理した後、急冷してターゲット素材を得た。その後、これを機械加工して、直径540mm、厚さ25mmのバッキングプレート一体型スパッタリングターゲットとした。このターゲットの物性を評価したところ、フランジ部のビッカース硬さHvは48であり、フランジ部の0.2%降伏応力は3.58×107N/m2であり、スパッタ面の(111)配向率は54.1%であった。
比較例4では、溶解鋳造したCu-Mn合金(Mn1wt%)インゴットを鍛造、圧延して圧延板を作製した。次に、これを熱処理した後、急冷してターゲット素材を得た。その後、これを機械加工して、直径850mm、厚さ25mmのバッキングプレート一体型スパッタリングターゲットとした。このターゲットの物性を評価したところ、フランジ部のビッカース硬さHvは62であり、フランジ部の0.2%降伏応力は4.70×107N/m2であり、スパッタ面の(111)配向率は55.5%であった。
また、成膜した薄膜のシート抵抗値を測定して、その膜厚均一性を算出した(表1)。表1に示す通り、実施例1~3、5~7のターゲットを用いて形成した薄膜は、膜厚均一性2.3%~2.8%であり、比較例1~3のターゲットを用いた場合の膜厚均一性5.6%~6.3%に比べて、膜厚均一性(ユニフォーミティ)が良好な結果を示した。
本発明のバッキングプレート一体型スパッタリングターゲットは特に、自己拡散抑制機能を有し、活性なCuの拡散による配線周囲の汚染を効果的に防止することができる、エレクトロマイグレーション(EM)耐性、耐食性等に優れた、半導体用銅マンガン合金配線の形成に有用である。
Claims (5)
- バッキングプレート一体型スパッタリングターゲットにおいて、フランジ部におけるビッカース硬度Hvが90以上、かつ、フランジ部における0.2%降伏応力が6.98×107N/m2以上であることを特徴とするバッキングプレート一体型スパッタリングターゲット。
- スパッタリングターゲットとバッキングプレートがCu-Mn合金で形成されていることを特徴とする請求項1記載のバッキングプレート一体型スパッタリングターゲット。
- スパッタ面における(111)配向率が50%以下であることを特徴とする請求項2記載のバッキングプレート一体型スパッタリングターゲット。
- ターゲット材を塑性加工した後、さらに、フランジ部のみを塑性加工することを特徴とするバッキングプレート一体型スパッタリングターゲットの製造方法。
- スパッタリングターゲットとバッキングプレートがCu-Mn合金で形成されていることを特徴とする請求項4記載のバッキングプレート一体型スパッタリングターゲットの製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020147002459A KR20140029532A (ko) | 2011-09-30 | 2012-09-12 | 스퍼터링 타깃 및 그 제조 방법 |
CN201280047223.2A CN103827349B (zh) | 2011-09-30 | 2012-09-12 | 溅射靶及其制造方法 |
SG2014009989A SG2014009989A (en) | 2011-09-30 | 2012-09-12 | Sputtering target and manufacturing method therefor |
EP12836521.0A EP2733235B1 (en) | 2011-09-30 | 2012-09-12 | Sputtering target and manufacturing method therefor |
US14/348,174 US9704695B2 (en) | 2011-09-30 | 2012-09-12 | Sputtering target and manufacturing method therefor |
IL231042A IL231042B (en) | 2011-09-30 | 2014-02-19 | The purpose of the thesis and method for its production |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-216326 | 2011-09-30 | ||
JP2011216326 | 2011-09-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013047199A1 true WO2013047199A1 (ja) | 2013-04-04 |
Family
ID=47995233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/073273 WO2013047199A1 (ja) | 2011-09-30 | 2012-09-12 | スパッタリングターゲット及びその製造方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US9704695B2 (ja) |
EP (1) | EP2733235B1 (ja) |
JP (1) | JPWO2013047199A1 (ja) |
KR (1) | KR20140029532A (ja) |
CN (1) | CN103827349B (ja) |
IL (1) | IL231042B (ja) |
SG (1) | SG2014009989A (ja) |
TW (1) | TWI540218B (ja) |
WO (1) | WO2013047199A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014021173A1 (ja) * | 2012-08-03 | 2014-02-06 | 株式会社コベルコ科研 | Cu合金薄膜形成用スパッタリングターゲットおよびその製造方法 |
WO2015037533A1 (ja) * | 2013-09-12 | 2015-03-19 | Jx日鉱日石金属株式会社 | バッキングプレート一体型の金属製スパッタリングターゲット及びその製造方法 |
WO2017179573A1 (ja) * | 2016-04-12 | 2017-10-19 | 三菱マテリアル株式会社 | 銅合金製バッキングチューブ及び銅合金製バッキングチューブの製造方法 |
WO2019225472A1 (ja) * | 2018-05-21 | 2019-11-28 | 株式会社アルバック | スパッタリングターゲット及びその製造方法 |
WO2024014429A1 (ja) * | 2022-07-11 | 2024-01-18 | 古河電気工業株式会社 | 放熱部品用銅合金材および放熱部品 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL162023A0 (en) * | 1998-03-30 | 2005-11-20 | Rtp Pharma Inc | Compositions containing microparticles of water-insoluble substances and method for their preparation |
EP2784174B1 (en) | 2012-01-12 | 2017-11-01 | JX Nippon Mining & Metals Corporation | High-purity copper sputtering target |
WO2013111609A1 (ja) * | 2012-01-23 | 2013-08-01 | Jx日鉱日石金属株式会社 | 高純度銅マンガン合金スパッタリングターゲット |
KR101923292B1 (ko) | 2014-07-31 | 2018-11-28 | 제이엑스금속주식회사 | 방식성의 금속과 Mo 또는 Mo 합금을 확산 접합한 백킹 플레이트, 및 그 백킹 플레이트를 구비한 스퍼터링 타깃-백킹 플레이트 조립체 |
JP6021861B2 (ja) * | 2014-08-06 | 2016-11-09 | Jx金属株式会社 | スパッタリングターゲット−バッキングプレート接合体 |
TWI663274B (zh) | 2017-03-30 | 2019-06-21 | 日商Jx金屬股份有限公司 | Sputtering target and manufacturing method thereof |
US10760156B2 (en) * | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
US11035036B2 (en) | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
US11424111B2 (en) * | 2020-06-25 | 2022-08-23 | Taiwan Semiconductor Manufacturing Company Limited | Sputtering target assembly to prevent overetch of backing plate and methods of using the same |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10110226A (ja) * | 1996-10-08 | 1998-04-28 | Dowa Mining Co Ltd | 銅または銅合金の製造方法 |
JPH11335826A (ja) * | 1998-05-27 | 1999-12-07 | Ryoka Matthey Kk | Al合金製スパッタリングターゲット材の製造方法 |
JP2002121662A (ja) * | 2000-04-07 | 2002-04-26 | Kojundo Chem Lab Co Ltd | 一体構造型スパッタリングターゲット |
JP2005533187A (ja) * | 2002-07-16 | 2005-11-04 | ハネウェル・インターナショナル・インコーポレーテッド | 銅スパッタリングターゲット及び銅スパッタリングターゲットの形成方法 |
WO2006025347A1 (ja) * | 2004-08-31 | 2006-03-09 | National University Corporation Tohoku University | 銅合金及び液晶表示装置 |
JP2006073863A (ja) * | 2004-09-03 | 2006-03-16 | Nikko Materials Co Ltd | 半導体用銅合金配線及びスパッタリングターゲット並びに半導体用銅合金配線の形成方法 |
WO2008041535A1 (en) * | 2006-10-03 | 2008-04-10 | Nippon Mining & Metals Co., Ltd. | Cu-Mn ALLOY SPUTTERING TARGET AND SEMICONDUCTOR WIRING |
JP2010053445A (ja) * | 2008-08-01 | 2010-03-11 | Mitsubishi Materials Corp | フラットパネルディスプレイ用配線膜形成用スパッタリングターゲット |
JP2011048323A (ja) * | 2009-01-16 | 2011-03-10 | Kobe Steel Ltd | 表示装置用Cu合金膜および表示装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3725052A (en) * | 1969-09-13 | 1973-04-03 | Foundation Res Inst Electric A | Non-magnetic resilient manganese-copper alloy having a substantially temperature-free elastic modulus |
JPH09209133A (ja) | 1996-01-30 | 1997-08-12 | Mitsubishi Materials Corp | マグネトロンスパッタリング用Tiターゲット |
JPH11236665A (ja) | 1998-02-20 | 1999-08-31 | Japan Energy Corp | スパッタリングタ−ゲット用バッキングプレ−ト及びスパッタリングタ−ゲット/バッキングプレ−ト組立体 |
JP2001064771A (ja) * | 1999-08-27 | 2001-03-13 | Kojundo Chem Lab Co Ltd | スパッタリングターゲット |
US6878250B1 (en) | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
JP3791829B2 (ja) | 2000-08-25 | 2006-06-28 | 株式会社日鉱マテリアルズ | パーティクル発生の少ないスパッタリングターゲット |
JP3973857B2 (ja) | 2001-04-16 | 2007-09-12 | 日鉱金属株式会社 | マンガン合金スパッタリングターゲットの製造方法 |
EP1466999B1 (en) | 2001-12-19 | 2014-10-08 | JX Nippon Mining & Metals Corporation | Method for connecting magnetic substance target to backing plate and magnetic substance target |
US20040016635A1 (en) * | 2002-07-19 | 2004-01-29 | Ford Robert B. | Monolithic sputtering target assembly |
JP4794802B2 (ja) | 2002-11-21 | 2011-10-19 | Jx日鉱日石金属株式会社 | 銅合金スパッタリングターゲット及び半導体素子配線 |
JP4223511B2 (ja) | 2003-03-17 | 2009-02-12 | 日鉱金属株式会社 | 銅合金スパッタリングターゲット及びその製造方法並びに半導体素子配線 |
KR100762084B1 (ko) | 2003-12-25 | 2007-10-01 | 닛코킨조쿠 가부시키가이샤 | 동 또는 동합금 타겟트/동합금 백킹 플레이트 조립체 |
CN102061450A (zh) | 2004-11-17 | 2011-05-18 | Jx日矿日石金属株式会社 | 溅射靶以及成膜装置 |
JP4706246B2 (ja) * | 2004-12-07 | 2011-06-22 | 大同特殊鋼株式会社 | 多元系ターゲット材及びその製造方法 |
JP4756458B2 (ja) * | 2005-08-19 | 2011-08-24 | 三菱マテリアル株式会社 | パーティクル発生の少ないMn含有銅合金スパッタリングターゲット |
KR101086661B1 (ko) | 2007-02-09 | 2011-11-24 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 고융점 금속 합금, 고융점 금속 규화물, 고융점 금속 탄화물, 고융점 금속 질화물 혹은 고융점 금속 붕소화물의 난소결체로 이루어지는 타겟 및 그 제조 방법 그리고 동스퍼터링 타겟-백킹 플레이트 조립체 및 그 제조 방법 |
US8702919B2 (en) * | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
WO2010085316A1 (en) * | 2009-01-22 | 2010-07-29 | Tosoh Smd, Inc. | Monolithic aluminum alloy target and method of manufacturing |
JP5681368B2 (ja) | 2010-02-26 | 2015-03-04 | 株式会社神戸製鋼所 | Al基合金スパッタリングターゲット |
KR20130121199A (ko) | 2011-09-14 | 2013-11-05 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 고순도 구리망간 합금 스퍼터링 타깃 |
US20140158532A1 (en) | 2011-09-14 | 2014-06-12 | Jx Nippon Mining & Metals Corporation | High-purity copper-manganese-alloy sputtering target |
EP2784174B1 (en) | 2012-01-12 | 2017-11-01 | JX Nippon Mining & Metals Corporation | High-purity copper sputtering target |
WO2013111609A1 (ja) | 2012-01-23 | 2013-08-01 | Jx日鉱日石金属株式会社 | 高純度銅マンガン合金スパッタリングターゲット |
JP5893797B2 (ja) | 2013-03-07 | 2016-03-23 | Jx金属株式会社 | 銅合金スパッタリングターゲット |
-
2012
- 2012-09-12 SG SG2014009989A patent/SG2014009989A/en unknown
- 2012-09-12 JP JP2013536149A patent/JPWO2013047199A1/ja active Pending
- 2012-09-12 EP EP12836521.0A patent/EP2733235B1/en active Active
- 2012-09-12 WO PCT/JP2012/073273 patent/WO2013047199A1/ja active Application Filing
- 2012-09-12 US US14/348,174 patent/US9704695B2/en active Active
- 2012-09-12 KR KR1020147002459A patent/KR20140029532A/ko not_active Application Discontinuation
- 2012-09-12 CN CN201280047223.2A patent/CN103827349B/zh active Active
- 2012-09-17 TW TW101133956A patent/TWI540218B/zh active
-
2014
- 2014-02-19 IL IL231042A patent/IL231042B/en active IP Right Grant
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10110226A (ja) * | 1996-10-08 | 1998-04-28 | Dowa Mining Co Ltd | 銅または銅合金の製造方法 |
JPH11335826A (ja) * | 1998-05-27 | 1999-12-07 | Ryoka Matthey Kk | Al合金製スパッタリングターゲット材の製造方法 |
JP2002121662A (ja) * | 2000-04-07 | 2002-04-26 | Kojundo Chem Lab Co Ltd | 一体構造型スパッタリングターゲット |
JP2005533187A (ja) * | 2002-07-16 | 2005-11-04 | ハネウェル・インターナショナル・インコーポレーテッド | 銅スパッタリングターゲット及び銅スパッタリングターゲットの形成方法 |
WO2006025347A1 (ja) * | 2004-08-31 | 2006-03-09 | National University Corporation Tohoku University | 銅合金及び液晶表示装置 |
JP2006073863A (ja) * | 2004-09-03 | 2006-03-16 | Nikko Materials Co Ltd | 半導体用銅合金配線及びスパッタリングターゲット並びに半導体用銅合金配線の形成方法 |
WO2008041535A1 (en) * | 2006-10-03 | 2008-04-10 | Nippon Mining & Metals Co., Ltd. | Cu-Mn ALLOY SPUTTERING TARGET AND SEMICONDUCTOR WIRING |
JP2010053445A (ja) * | 2008-08-01 | 2010-03-11 | Mitsubishi Materials Corp | フラットパネルディスプレイ用配線膜形成用スパッタリングターゲット |
JP2011048323A (ja) * | 2009-01-16 | 2011-03-10 | Kobe Steel Ltd | 表示装置用Cu合金膜および表示装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2733235A4 * |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014021173A1 (ja) * | 2012-08-03 | 2014-02-06 | 株式会社コベルコ科研 | Cu合金薄膜形成用スパッタリングターゲットおよびその製造方法 |
KR20200043515A (ko) | 2013-09-12 | 2020-04-27 | 제이엑스금속주식회사 | 배킹 플레이트 일체형의 금속제 스퍼터링 타깃 및 그 제조 방법 |
WO2015037533A1 (ja) * | 2013-09-12 | 2015-03-19 | Jx日鉱日石金属株式会社 | バッキングプレート一体型の金属製スパッタリングターゲット及びその製造方法 |
JP6038305B2 (ja) * | 2013-09-12 | 2016-12-07 | Jx金属株式会社 | バッキングプレート一体型の金属製スパッタリングターゲット及びその製造方法 |
JP2017078226A (ja) * | 2013-09-12 | 2017-04-27 | Jx金属株式会社 | バッキングプレート一体型の金属製スパッタリングターゲット及びその製造方法 |
US9711336B2 (en) | 2013-09-12 | 2017-07-18 | Jx Nippon Mining & Metals Corporation | Backing plate-integrated metal sputtering target and method of producing same |
KR102364005B1 (ko) * | 2013-09-12 | 2022-02-16 | 제이엑스금속주식회사 | 배킹 플레이트 일체형의 금속제 스퍼터링 타깃 및 그 제조 방법 |
JP2017190479A (ja) * | 2016-04-12 | 2017-10-19 | 三菱マテリアル株式会社 | 銅合金製バッキングチューブ及び銅合金製バッキングチューブの製造方法 |
WO2017179573A1 (ja) * | 2016-04-12 | 2017-10-19 | 三菱マテリアル株式会社 | 銅合金製バッキングチューブ及び銅合金製バッキングチューブの製造方法 |
WO2019225472A1 (ja) * | 2018-05-21 | 2019-11-28 | 株式会社アルバック | スパッタリングターゲット及びその製造方法 |
JPWO2019225472A1 (ja) * | 2018-05-21 | 2020-05-28 | 株式会社アルバック | スパッタリングターゲット及びその製造方法 |
US11629400B2 (en) | 2018-05-21 | 2023-04-18 | Ulvac, Inc. | Sputtering target and method of producing the same |
WO2024014429A1 (ja) * | 2022-07-11 | 2024-01-18 | 古河電気工業株式会社 | 放熱部品用銅合金材および放熱部品 |
Also Published As
Publication number | Publication date |
---|---|
CN103827349B (zh) | 2016-08-24 |
SG2014009989A (en) | 2014-04-28 |
JPWO2013047199A1 (ja) | 2015-03-26 |
TW201317379A (zh) | 2013-05-01 |
IL231042B (en) | 2018-05-31 |
KR20140029532A (ko) | 2014-03-10 |
CN103827349A (zh) | 2014-05-28 |
US9704695B2 (en) | 2017-07-11 |
US20140318953A1 (en) | 2014-10-30 |
IL231042A0 (en) | 2014-03-31 |
TWI540218B (zh) | 2016-07-01 |
EP2733235B1 (en) | 2017-05-03 |
EP2733235A1 (en) | 2014-05-21 |
EP2733235A4 (en) | 2015-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2013047199A1 (ja) | スパッタリングターゲット及びその製造方法 | |
JP6077102B2 (ja) | スパッタリング用チタンターゲット及びその製造方法 | |
JP6133357B2 (ja) | タンタルスパッタリングターゲット及びその製造方法 | |
JP2007051351A (ja) | パーティクル発生の少ないMn含有銅合金スパッタリングターゲット | |
JP5905600B2 (ja) | タンタルスパッタリングターゲット及びその製造方法 | |
KR101950549B1 (ko) | 탄탈 스퍼터링 타깃 및 그 제조 방법 | |
WO2013038962A1 (ja) | 高純度銅マンガン合金スパッタリングターゲット | |
JP5897767B2 (ja) | スパッタリングターゲット/バッキングプレート組立体 | |
WO2015037533A1 (ja) | バッキングプレート一体型の金属製スパッタリングターゲット及びその製造方法 | |
JP5747091B2 (ja) | 高純度銅スパッタリングターゲット | |
WO2013111689A1 (ja) | 高純度銅クロム合金スパッタリングターゲット | |
TWI695894B (zh) | 濺鍍用鈦靶及其製造方法、以及含鈦薄膜的製造方法 | |
WO2014132857A1 (ja) | 高純度銅コバルト合金スパッタリングターゲット | |
JPH10110226A (ja) | 銅または銅合金の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12836521 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2013536149 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20147002459 Country of ref document: KR Kind code of ref document: A |
|
REEP | Request for entry into the european phase |
Ref document number: 2012836521 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012836521 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 231042 Country of ref document: IL |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14348174 Country of ref document: US |