WO2003083955A1 - Element photovoltaique et procede de fabrication - Google Patents

Element photovoltaique et procede de fabrication Download PDF

Info

Publication number
WO2003083955A1
WO2003083955A1 PCT/JP2003/003507 JP0303507W WO03083955A1 WO 2003083955 A1 WO2003083955 A1 WO 2003083955A1 JP 0303507 W JP0303507 W JP 0303507W WO 03083955 A1 WO03083955 A1 WO 03083955A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
photovoltaic element
portions
conductive semiconductor
type
Prior art date
Application number
PCT/JP2003/003507
Other languages
English (en)
Inventor
Takahiro Mishima
Naoki Ishikawa
Original Assignee
Ebara Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corporation filed Critical Ebara Corporation
Priority to AU2003217486A priority Critical patent/AU2003217486A1/en
Publication of WO2003083955A1 publication Critical patent/WO2003083955A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a photovoltaic element such as a solar cell, and more particularly to a photovoltaic element such as a solar cell having a p-n junction and positive and negative electrodes disposed on a rear surface opposite to a light incident surface.
  • the present invention also relates to a method of manufacturing such a photovoltaic element.
  • Solar cells manufactured in mass production are mostly made of amorphous silicon materials . While such solar cells can be manufactured at low cost, they have a low efficiency of generating electric power.
  • a solar cell having a p-n junction formed by a monocrystalline or polycrystalline silicon substrate and an amorphous silicon film of a conductivity type opposite to the silicon substrate onto which the amorphous silicon film is adhered.
  • a solar cell having a junction formed by a combination of a crystalline silicon substrate and an amorphous silicon film photo carriers are recombined with each other due to interface state levels being produced at an interface between semiconductor layers having different conductivity types. Therefore, it has been difficult to achieve reliable performance.
  • a solar cell has a transparent electrode on a light incident surface of a substrate and a rear electrode on a rear surface opposite to the light incident surface and produces photovoltaic power between the transparent electrode and the rear electrode.
  • shielding loss of light is caused by the transparent electrode on the light incident surface, so that the solar cell has a limited efficiency of generating electric power.
  • a rear-junction type solar cell in which a transparent electrode is not disposed on a light incident surface of a substrate.
  • a p-n junction is formed near a rear surface opposite to the light incident surface, and electrodes are connected to p-type and n-type layers, respectively.
  • the present invention has been made in view of the above drawbacks. It is, therefore, an object of the present invention to provide a photovoltaic element such as a solar cell which includes a silicon substrate with high quality to such an extent that carriers have long lifetime and has a high efficiency of generating electric power, and a method of manufacturing such a photovoltaic element through a low-temperature process.
  • a rear-junction type photovoltaic element in which a p-n junction and electrodes are formed on a rear surface opposite to a light incident surface (front surface) of a (silicon) semiconductor silicon substrate.
  • the photovoltaic element has an intrinsic semiconductor film having a thickness ranging from 0.1 nm to 50 nm.
  • the intrinsic semiconductor film is disposed on the rear surface of the semiconductor substrate.
  • P-type conductive semiconductor portions and n-type conductive semiconductor portions are disposed on the intrinsic semiconductor film, respectively.
  • a first electrode and a second electrode are connected to the p-type portions and the n-type portions, respectively.
  • the first electrode and the second electrode should preferably have comb-like shapes, respectively, and these comb-like shapes should preferably be alternately disposed.
  • the first electrode has a first set of teeth and said second electrode has a second set of teeth.
  • the teeth of the first set of teeth are alternately disposed between the teeth of the second set of teeth.
  • the semiconductor substrate may comprise a onocrystalline or polycrystalline semiconductor substrate.
  • the intrinsic semiconductor film may comprise an amorphous silicon film, a film having a hetero-structure in which amorphous silicon and microcrystalline silicon are mixed with each other, an amorphous silicon carbide film, or a film having a hetero-structure in which amorphous silicon carbide and microcrystalline silicon are mixed with each other. It is desirable that the intrinsic semiconductor film is formed by plasma CVD or, particularly, catalytic CVD.
  • An antireflection film may be disposed on the light incident surface of the semiconductor substrate .
  • a layer having a conductivity type opposite to the semiconductor substrate may be disposed on the light incident surface of the semiconductor substrate.
  • Another intrinsic semiconductor film may be disposed between the light incident surface of the semiconductor substrate and the antireflection film.
  • an intrinsic semiconductor film is formed by plasma CVD or catalytic CVD.
  • P-type and n-type portions and electrodes are formed on the intrinsic semiconductor film by a low-temperature process.
  • the photovoltaic element can maintain a silicon substrate with high quality to such an extent that carriers have long lifetime .
  • a rear-junction type photovoltaic element according to the present invention has a good efficiency of photovoltaic conversion, e.g., a high efficiency of generating electric power .
  • the substrate can be maintained with high quality, and productivity of forming films can relatively be enhanced.
  • FIG. 1 is a schematic view showing a photovoltaic element according to a first embodiment of the present invention
  • FIG. 2A is a schematic view showing a catalytic CVD apparatus according to an embodiment of the present invention
  • FIG. 2B is a schematic view showing a plasma CVD apparatus according to an embodiment of the present invention
  • FIG. 3 is a bottom view of the photovoltaic element shown in FIG. 1;
  • FIG. 4 is a schematic view showing a photovoltaic element according to a second embodiment of the present invention.
  • FIG. 5 is a schematic view showing a photovoltaic element according to a third embodiment of the present invention.
  • FIGS. 6A through 6F illustrate a process of manufacturing a photovoltaic element shown in FIG. 4.
  • FIG. 1 shows a photovoltaic element according to a first embodiment of the present invention .
  • the photovoltaic element may be used as a solar cell .
  • the photovoltaic element comprises a rear-junction type solar cell in which a p-n junction and electrodes are disposed on an n-type crystalline semiconductor substrate 11.
  • the crystalline semiconductor substrate 11 may comprise a monocrystalline or polycrystalline semiconductor substrate.
  • the crystalline semiconductor substrate 11 may comprise a monocrystalline silicon substrate formed of a dendritic web having a thickness of 100 ⁇ m and doped into an n-type semiconductor with impurities.
  • the crystalline semiconductor substrate 11 may comprise a ribbon-like polycrystalline silicon substrate.
  • the photovoltaic element has an intrinsic semiconductor film 12 disposed on a rear surface of the crystalline semiconductor substrate 11.
  • the monocrystalline or polycrystalline silicon substrate 11 can be produced as follows. A silicon material is melted in a crucible maintained at a predetermined temperature. A seed crystal is pulled up along a crystal axis of a predetermined orientation from the crucible to grow a thin ribbon-like (sheet-like) crystal. The thin crystal is clamped on an endless belt and continuously pulled up to form a long crystal. The produced long crystal is cut off into proper dimensions to produce a rectangular sheet-like monocrystalline or polycrystalline silicon substrate having a thickness of 150 ⁇ m or less. Such a method of producing monocrystalline or polycrystalline silicon substrate is disclosed in Japanese patent publication No. 2002-087899 assigned to the assignee of this patent application, the disclosure of which is hereby incorporated by reference.
  • the intrinsic semiconductor film 12 is formed as an extremely thin amorphous layer having a thickness ranging from 0.1 nm to 50 nm.
  • the intrinsic semiconductor film may comprise an amorphous silicon film, a film having a hetero-structure in which amorphous silicon and microcrystalline silicon are mixed with each other, an amorphous silicon carbide film, or a film having a hetero-structure in which amorphous silicon carbide and microcrystalline silicon are mixed with each other.
  • the intrinsic semiconductor film is an electrically neutral film. With the intrinsic semiconductor film being interposed between p-type and n-type layers, hydrogen passivation can effectively be performed, and electrical characteristics can be improved. For example, an open-circuit voltage can be increased.
  • the intrinsic semiconductor film 12 should preferably be formed by catalytic CVD or plasma CVD.
  • FIG. 2A shows a catalytic CVD apparatus.
  • the catalytic CVD apparatus has a gas supply device 21 for supplying gases, a high- temperature catalyst 22, and a substrate holder 24 for holding a substrate 23 to be processed. These components are housed in a vacuum chamber capable of being depressurized.
  • the high- temperature catalyst 22 is used to form a CVD film on a surface of the substrate 23 by heating and activating the gases supplied from the gas supply device 21.
  • a wire made of tungsten, molybdenum, or the like which is heated to a temperature ranging from 1500 to 2400 °C may be used as a high-temperature catalyst 22.
  • FIG. 2B shows a plasma CVD apparatus.
  • the plasma CVD apparatus has electrodes 25 and 26 and a high frequency power supply 27 for applying a high frequency voltage between the electrodes 25 and 26.
  • gas molecules 28 to be deposited are formed into a plasma and vibrated in directions shown by arrows in FIG. 2B. In this manner, a CVD film is deposited on a surface of a substrate 23 to be processed.
  • the catalytic CVD apparatus shown in FIG. 2A causes almost no damage to a substrate by a plasma, has a simpler and less expensive structure, and can easily be made larger in size as compared to the plasma CVD apparatus shown in FIG. 2B.
  • the catalytic CVD apparatus can achieve a relatively high deposition rate of 5 to 10 nm/sec, for example, and produce a high-quality film of an amorphous silicon film or a microcrystalline silicon film in a relatively short time.
  • the photovoltaic element has p-type portions 13 and n-type portions 14, each formed by doping with impurities. These p-type portions 13 and n-type portions 14 are alternately disposed on a surface of the intrinsic semiconductor film 12.
  • the p-type portions 13 and n-type portions 14 comprise amorphous conductive silicon layers formed, for example, by catalytic CVD or plasma CVD, for example, with a metallic mask. Electrodes 15 and 16 are disposed on the p-type portions 13 and n-type portions 14, respectively. For example, conductive paste of silver or the like is screen-printed into a pattern on the p-type portions 13 and n-type portions 14 and is then hardened by heating to form electrodes 15 and 16. An insulating film 17 made of polyimide resin or the like is disposed between the p-type portions 13 and n-type portions 14. An antireflection film 18 made of SiN may be formed on the light incident surface of the silicon substrate 11.
  • FIG. 3 schematically shows a rear surface of the photovoltaic element of FIG.1.
  • the electrode 15 connected to the p-type portions 13 has a comb-like shape
  • the electrode 16 connected to the n-type portions 14 has a comb-like shape.
  • the comb-like shape of the electrode 15 and the comb-like shape of the electrode 16 are alternately disposed adjacent to and in parallel with each other.
  • the electrode 15 has a number of teeth connected to a bus bar 15a, and the electrode
  • bus bar 16a has a number of teeth connected to a bus bar 16a. In this photovoltaic element, electric power is generated between the bus bars 15a and 16a.
  • the photovoltaic element has a thin intrinsic amorphous silicon layer (semiconductor film) 12 formed on the rear surface of the substrate 11 by catalytic CVD or plasma CVD.
  • the solar cell has p-type portions 13 and n-type portions 14 formed on a surface of the intrinsic semiconductor film 12.
  • the p-type portions 13 and n-type portions 14 are also formed by catalytic CVD or plasma CVD and doped with p-type and n-type impurities, respectively.
  • the intrinsic semiconductor film 12, the p-type portions 13 and n-type portions 14 may be formed by a low-temperature process such as catalytic CVD or plasma CVD. Further, with respect to forming an insulating film
  • each pattern is formed by screen-printing or the like and hardened by heating at a relatively low temperature of 400°C or less.
  • the photovoltaic element is manufactured in low-temperature processes at temperatures of 400°C or less. Therefore, the silicon substrate 11 can be maintained with high quality to such an extent that carriers have long lifetime. Since the photovoltaic element has no transparent electrodes on the front surface, it has a good efficiency of photovoltaic conversion, e.g. , a high efficiency of generating electric power, and does not have shielding loss.
  • the temperature of the substrate becomes in a range of from about 100°C to about 400°C, and thus the catalytic CVD is a low-temperature process. Therefore, the silicon substrate 11 is not damaged by catalytic CVD. Further, defects within the crystal can be corrected by a high- concentration hydrogen radical to reduce defective interface state levels.
  • the catalytic CVD causes no damage to a substrate by a plasma, unlikely plasma CVD. Thus, the silicon substrate
  • FIG. 4 shows a photovoltaic element according to a second embodiment of the present invention.
  • the photovoltaic element in the second embodiment has the same structure as the photovoltaic element shown in FIG. 1 except that an intrinsic semiconductor film 20 is interposed between the light incident surface of the semiconductor substrate 11 and the antireflection film 18.
  • the intrinsic semiconductor film 20 should preferably be formed simultaneously with the intrinsic semiconductor film
  • the side surfaces of the semiconductor substrate 11 should preferably be covered with an intrinsic semiconductor film.
  • an intrinsic semiconductor film By covering the light incident surface and the side surfaces of the crystalline silicon substrate 11 with intrinsic semiconductor films, interface state levels can be reduced, and electrical characteristics can be improved.
  • FIG. 5 shows a photovoltaic element according to a third embodiment of the present invention.
  • the photovoltaic element in the third embodiment has the same structure as the photovoltaic element shown in FIG.4 except that a layer 19 having a conductivity type opposite to the substrate 11 is interposed between the light incident surface of the substrate 11 and the intrinsic semiconductor film 20.
  • the layer 19 is p-type. Since the layer 19 has a conductivity type opposite to the substrate 11, an internal electric field in the substrate 11 can prevent carriers from being recombined with each other. Therefore, it is possible to improve electrical characteristics such as an efficiency of photovoltaic conversion.
  • an n-type monocrystalline or polycrystalline silicon substrate 11 is prepared.
  • the silicon substrate 11 may be formed of dendritic web crystal or ribbon-like polycrystal .
  • the surfaces of the silicon substrate 11 are cleaned to remove oxide films or the like. Thus, the surfaces of the silicon substrate 11 are cleansed.
  • catalytic CVD is performed to form intrinsic amorphous silicon films 12 and 20 on front and rear faces, respectively, of the silicon substrate 11.
  • the intrinsic amorphous silicon films 12 and 20 should preferably have thicknesses ranging from 0.1 nm to 50 nm, for example, about 10 nm.
  • the intrinsic amorphous silicon films are formed under the following conditions.
  • catalytic CVD is performed to form amorphous conductive silicon portions 33 on the intrinsic amorphous silicon film 12.
  • the conductive silicon portions 33 have thicknesses of about 30 nm.
  • the conductive silicon portions 33 are then doped to form p-type portions 13.
  • the p-type portions 13 are formed under the following conditions.
  • amorphous conductive silicon portions 34 are formed on the intrinsic amorphous silicon film
  • a metallic mask is used for forming a number of parallel comb-like patterns of the amorphous conductive silicon portions
  • the conductive silicon portions 34 have thicknesses of about 30 nm.
  • the conductive silicon portions 34 are then doped to form n-type portions 14.
  • the n-type portions 14 are formed under the following conditions.
  • insulating portions (protective portions) 17 are formed on the intrinsic amorphous silicon film 12.
  • paste of polyimide resin is embedded into between the conductive silicon portions 13 and 14 by screen-printing and hardened by heating at a temperature of 250 °C or less.
  • the insulating portions (protective portions) 17 can improve resistance to weather and to soft soldering.
  • silver paste is applied on the conductive silicon portions 13 and 14 by screen-printing and hardened by heating at a relatively low temperature of 250°C or less to form comb-like electrodes 15 and 15a, 16 and 16a (see FIG. 3) disposed alternately on the conductive silicon portions 13 and 14, respectively.
  • the antireflection film should preferably be formed on the intrinsic semiconductor film 20.
  • the antireflection film may be formed as an Si 3 N 4 film by high frequency sputtering, For example.
  • the antireflection film may have a thickness of about 60 nm.
  • a diffusion layer 19 having a conductivity type opposite to that of the substrate 11 may be formed between the light incident surface of the substrate 11 and the intrinsic semiconductor film 20.
  • the diffusion layer 19 may be formed on the silicon substrate 11 by thermomigration, ion implantation, or the like.
  • the present invention is suitable for use in a photovoltaic element such as a solar cell having a p-n junction and positive and negative electrodes disposed on a rear surface opposite to a light incident surface.

Landscapes

  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

On forme, dans un élément photovoltaïque du type à jonction arrière, une jonction p-n et des électrodes (15, 16) sur une face arrière à l'opposé d'une face d'incidence de la lumière d'un substrat au silicium (semi-conducteur) (11). Cet élément photovoltaïque comporte une couche semi-conductrice intrinsèque (12) dont l'épaisseur est comprise entre 0,1 et 50 nm. Cette couche semi-conductrice intrinsèque (12) se trouve sur la face arrière du substrat semi-conducteur (11). Des régions semi-conductrices de type p et de type n (13, 14, respectivement) sont disposées sur la couche semi-conductrice intrinsèque (12). Une première (15) et une seconde (16) électrodes sont connectées respectivement aux régions semi-conductrices de type p et de type n (13, 14).
PCT/JP2003/003507 2002-03-29 2003-03-24 Element photovoltaique et procede de fabrication WO2003083955A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003217486A AU2003217486A1 (en) 2002-03-29 2003-03-24 Photovoltaic element and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002096229A JP2003298078A (ja) 2002-03-29 2002-03-29 光起電力素子
JP2002-96229 2002-03-29

Publications (1)

Publication Number Publication Date
WO2003083955A1 true WO2003083955A1 (fr) 2003-10-09

Family

ID=28671828

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/003507 WO2003083955A1 (fr) 2002-03-29 2003-03-24 Element photovoltaique et procede de fabrication

Country Status (3)

Country Link
JP (1) JP2003298078A (fr)
AU (1) AU2003217486A1 (fr)
WO (1) WO2003083955A1 (fr)

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2880989A1 (fr) * 2005-01-20 2006-07-21 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
WO2007085072A1 (fr) 2006-01-26 2007-08-02 Arise Technologies Corporation Cellule solaire
EP1873840A1 (fr) * 2006-06-30 2008-01-02 General Electric Company Dispositif photovoltaïque qui comprend une configuration de contac totalement en arrière ; et processus de fabrication associés
FR2906406A1 (fr) * 2006-09-26 2008-03-28 Commissariat Energie Atomique Procede de realisation de cellule photovoltaique a heterojonction en face arriere.
WO2008115814A2 (fr) * 2007-03-16 2008-09-25 Bp Corporation North America Inc. Cellules solaires
FR2914501A1 (fr) * 2007-03-28 2008-10-03 Commissariat Energie Atomique Dispositif photovoltaique a structure a heterojonctions interdigitee discontinue
WO2009074469A2 (fr) * 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Cellule solaire à contact arrière comportant des zones d'émetteur de côté arrière de grande surface et procédé de fabrication de la cellule solaire
WO2009074466A1 (fr) * 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Cellule solaire à contact arrière comportant des zones d'émetteur et de base allongées, encastrées les unes dans les autres sur le côté arrière, et procédé de fabrication de la cellule solaire
WO2010000716A2 (fr) * 2008-07-01 2010-01-07 Institut Für Solarenergieforschung Gmbh Cellule solaire à hétérojonction avec absorbeur à profil de dopage intégré
CN102044579A (zh) * 2009-09-07 2011-05-04 Lg电子株式会社 太阳能电池
WO2011073868A2 (fr) 2009-12-14 2011-06-23 Total S.A. Cellule photovoltaïque heterojonction a contact arriere
DE102010007695A1 (de) * 2010-02-09 2011-08-11 Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109 Rückseitenkontaktierte Solarzelle mit unstrukturierter Absorberschicht
WO2012018119A1 (fr) * 2010-08-06 2012-02-09 三洋電機株式会社 Cellule solaire et procédé de fabrication de cellule solaire
CN102770973A (zh) * 2009-12-21 2012-11-07 现代重工业株式会社 背面场型异质结太阳能电池及其制造方法
WO2012163517A2 (fr) 2011-05-27 2012-12-06 Renewable Energy Corporation Asa Cellule solaire et procédé pour sa production
EP2219222A3 (fr) * 2009-02-04 2013-02-20 Lg Electronics Inc. Cellule solaire et son procédé de fabrication
EP2421057A3 (fr) * 2010-08-17 2013-10-16 Lg Electronics Inc. Cellule solaire
GB2503515A (en) * 2012-06-29 2014-01-01 Rec Cells Pte Ltd A rear contact heterojunction solar cell
EP2690666A1 (fr) * 2011-03-25 2014-01-29 Sanyo Electric Co., Ltd. Procédé de fabrication d'un élément de conversion photoélectrique
US8883247B2 (en) 2007-05-29 2014-11-11 Sunpower Corporation Array of small contacts for solar cell fabrication
EP2822041A1 (fr) * 2013-07-05 2015-01-07 LG Electronics, Inc. Cellule solaire et son procédé de fabrication
CN104620395A (zh) * 2012-09-12 2015-05-13 夏普株式会社 光电转换元件以及光电转换元件的制造方法
EP3029740A1 (fr) * 2014-12-03 2016-06-08 Sharp Kabushiki Kaisha Dispositif photovoltaïque
CN105932089A (zh) * 2016-06-24 2016-09-07 深圳大学 无界面掺杂的背接触硅异质结太阳能电池及其制备方法
US20160336464A1 (en) * 2014-01-29 2016-11-17 Panasonic Intellectual Property Management Co., Ltd. Solar cell
EP2555251A4 (fr) * 2010-03-31 2017-04-19 Panasonic Intellectual Property Management Co., Ltd. Procédé de fabrication de cellule solaire et cellule solaire
EP3163632A1 (fr) 2015-11-02 2017-05-03 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Dispositif photovoltaïque et son procédé de fabrication
EP2575184B1 (fr) * 2011-09-29 2017-12-06 LG Electronics Inc. Module de cellule solaire
EP1519422B1 (fr) * 2003-09-24 2018-05-16 Panasonic Intellectual Property Management Co., Ltd. Cellule solaire et sa méthode de fabrication
US10170657B2 (en) 2012-03-23 2019-01-01 Sunpower Corporation Solar cell having an emitter region with wide bandgap semiconductor material
CN110416344A (zh) * 2019-07-10 2019-11-05 中山大学 一种硅基硫化锑异质结太阳电池及其制备方法

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006041105A (ja) * 2004-07-26 2006-02-09 Sharp Corp 太陽電池およびその製造方法
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
JP2006156646A (ja) * 2004-11-29 2006-06-15 Sharp Corp 太陽電池の製造方法
JP4945916B2 (ja) * 2005-04-08 2012-06-06 トヨタ自動車株式会社 光電変換素子
JP4657068B2 (ja) * 2005-09-22 2011-03-23 シャープ株式会社 裏面接合型太陽電池の製造方法
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
JP5675031B2 (ja) 2006-11-28 2015-02-25 三洋電機株式会社 ｐ型アモルファスシリコン薄膜の製造方法、光起電力装置及び光起電力装置の製造方法
US20090211627A1 (en) * 2008-02-25 2009-08-27 Suniva, Inc. Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
JP5329107B2 (ja) * 2008-02-28 2013-10-30 三洋電機株式会社 太陽電池及びその製造方法
JP2009253096A (ja) * 2008-04-08 2009-10-29 Sharp Corp 太陽電池セルの製造方法および太陽電池モジュールの製造方法ならびに太陽電池モジュール
JP2010123859A (ja) * 2008-11-21 2010-06-03 Kyocera Corp 太陽電池素子および太陽電池素子の製造方法
KR101578356B1 (ko) 2009-02-25 2015-12-17 엘지전자 주식회사 후면전극형 태양전지 및 그 제조방법
KR101714097B1 (ko) 2009-04-21 2017-03-08 테트라썬, 아이엔씨. 고효율 태양전지 구조 및 제조방법
US7927910B2 (en) * 2009-06-28 2011-04-19 Sino-American Silicon Products Inc. Manufacturing method of solar cell
US8324015B2 (en) * 2009-12-01 2012-12-04 Sunpower Corporation Solar cell contact formation using laser ablation
JP2011199277A (ja) * 2010-02-26 2011-10-06 Ulvac Japan Ltd 表面処理方法及び太陽電池セルの製造方法
WO2011119910A2 (fr) 2010-03-26 2011-09-29 Tetrasun, Inc. Contact électrique blindé et dopage à travers une couche diélectrique de passivation dans une cellule solaire cristalline à rendement élevé, structure et procédés de fabrication
WO2011149021A1 (fr) * 2010-05-28 2011-12-01 株式会社エバテック Procédé de fabrication d'élément photovoltaïque et élément photovoltaïque
KR101699297B1 (ko) * 2010-09-08 2017-02-13 엘지전자 주식회사 태양 전지의 제조 방법
KR20120037838A (ko) 2010-10-12 2012-04-20 삼성전자주식회사 트랜지스터 및 이를 포함하는 전자소자
JP2012084747A (ja) * 2010-10-13 2012-04-26 National Institute Of Advanced Industrial & Technology 結晶シリコン太陽電池の作製方法
JP2012182167A (ja) * 2011-02-28 2012-09-20 Sanyo Electric Co Ltd 太陽電池及び太陽電池の製造方法
JP5398772B2 (ja) * 2011-03-31 2014-01-29 三菱電機株式会社 光起電力装置およびその製造方法、光起電力モジュール
JP5773194B2 (ja) * 2011-07-11 2015-09-02 国立大学法人東京農工大学 太陽電池の製造方法
CN104412394B (zh) * 2012-06-29 2016-11-09 洛桑联邦理工学院 太阳能电池
JP6114029B2 (ja) * 2012-12-19 2017-04-12 順司 廣兼 光起電力素子およびその製造方法
US9673341B2 (en) 2015-05-08 2017-06-06 Tetrasun, Inc. Photovoltaic devices with fine-line metallization and methods for manufacture
CN108140685A (zh) * 2015-10-05 2018-06-08 株式会社爱发科 Hbc型晶体太阳能电池及其制造方法
JP7043308B2 (ja) * 2018-03-23 2022-03-29 株式会社カネカ 太陽電池の製造方法、および、太陽電池

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478879A (en) * 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
JPH03165578A (ja) * 1989-11-24 1991-07-17 Hitachi Ltd 太陽電池
JPH03181180A (ja) * 1989-12-11 1991-08-07 Canon Inc 太陽電池およびその製造方法
JPH0427169A (ja) * 1990-05-22 1992-01-30 Mitsubishi Materials Corp 太陽電池
US5641362A (en) * 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
JPH1117201A (ja) * 1997-04-28 1999-01-22 Sharp Corp 太陽電池セルおよびその製造方法
JP2001284616A (ja) * 2000-04-03 2001-10-12 Toyota Motor Corp 熱光発電装置用光電変換素子
JP2002057352A (ja) * 2000-06-02 2002-02-22 Honda Motor Co Ltd 太陽電池およびその製造方法
JP2002280586A (ja) * 2001-03-21 2002-09-27 Toyota Motor Corp 内部電極型太陽電池

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478879A (en) * 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
JPH03165578A (ja) * 1989-11-24 1991-07-17 Hitachi Ltd 太陽電池
JPH03181180A (ja) * 1989-12-11 1991-08-07 Canon Inc 太陽電池およびその製造方法
JPH0427169A (ja) * 1990-05-22 1992-01-30 Mitsubishi Materials Corp 太陽電池
US5641362A (en) * 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
JPH1117201A (ja) * 1997-04-28 1999-01-22 Sharp Corp 太陽電池セルおよびその製造方法
JP2001284616A (ja) * 2000-04-03 2001-10-12 Toyota Motor Corp 熱光発電装置用光電変換素子
JP2002057352A (ja) * 2000-06-02 2002-02-22 Honda Motor Co Ltd 太陽電池およびその製造方法
JP2002280586A (ja) * 2001-03-21 2002-09-27 Toyota Motor Corp 内部電極型太陽電池

Cited By (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1519422B1 (fr) * 2003-09-24 2018-05-16 Panasonic Intellectual Property Management Co., Ltd. Cellule solaire et sa méthode de fabrication
WO2006077343A1 (fr) * 2005-01-20 2006-07-27 Commissariat A L'energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US7935966B2 (en) 2005-01-20 2011-05-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Semiconductor device with heterojunctions and an inter-finger structure
EP2091086A3 (fr) * 2005-01-20 2017-04-19 Centre National de la Recherche Scientifique (CNRS) Dispositif semi-conducteur a heterojonctions
FR2880989A1 (fr) * 2005-01-20 2006-07-21 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US8421074B2 (en) 2005-01-20 2013-04-16 Centre National De La Recherche Scientifique (Cnrs) Semiconductor device with heterojunctions and an interdigitated structure
EP1979951A1 (fr) * 2006-01-26 2008-10-15 Arise Technologies Corporation Cellule solaire
WO2007085072A1 (fr) 2006-01-26 2007-08-02 Arise Technologies Corporation Cellule solaire
EP1979951A4 (fr) * 2006-01-26 2010-08-04 Arise Technologies Corp Cellule solaire
EP1873840A1 (fr) * 2006-06-30 2008-01-02 General Electric Company Dispositif photovoltaïque qui comprend une configuration de contac totalement en arrière ; et processus de fabrication associés
US7972894B2 (en) 2006-09-26 2011-07-05 Commissariat A L'energie Atomique Method of producing a photovoltaic cell with a heterojunction on the rear face
WO2008037658A3 (fr) * 2006-09-26 2008-05-22 Commissariat Energie Atomique Procede de realisation de cellule photovoltaique a heterojonction en face arriere
WO2008037658A2 (fr) * 2006-09-26 2008-04-03 Commissariat A L'energie Atomique Procede de realisation de cellule photovoltaique a heterojonction en face arriere
FR2906406A1 (fr) * 2006-09-26 2008-03-28 Commissariat Energie Atomique Procede de realisation de cellule photovoltaique a heterojonction en face arriere.
WO2008115814A2 (fr) * 2007-03-16 2008-09-25 Bp Corporation North America Inc. Cellules solaires
WO2008115814A3 (fr) * 2007-03-16 2010-01-07 Bp Corporation North America Inc. Cellules solaires
CN101689580B (zh) * 2007-03-16 2012-09-05 Bp北美公司 太阳能电池
WO2008125446A3 (fr) * 2007-03-28 2008-12-18 Commissariat Energie Atomique Dispositif photovoltaïque a structure a hétérojonctions interdigitée discontinue
US20100032014A1 (en) * 2007-03-28 2010-02-11 Commissariat A L'energie Atomique Photovoltaic device with a discontinuous interdigitated heterojunction structure
FR2914501A1 (fr) * 2007-03-28 2008-10-03 Commissariat Energie Atomique Dispositif photovoltaique a structure a heterojonctions interdigitee discontinue
US8723023B2 (en) 2007-03-28 2014-05-13 Commissariat A L'energie Atomique Photovoltaic device with a discontinuous interdigitated heterojunction structure
WO2008125446A2 (fr) * 2007-03-28 2008-10-23 Commissariat A L'energie Atomique Dispositif photovoltaïque a structure a hétérojonctions interdigitée discontinue
US8883247B2 (en) 2007-05-29 2014-11-11 Sunpower Corporation Array of small contacts for solar cell fabrication
WO2009074469A2 (fr) * 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Cellule solaire à contact arrière comportant des zones d'émetteur de côté arrière de grande surface et procédé de fabrication de la cellule solaire
WO2009074466A1 (fr) * 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Cellule solaire à contact arrière comportant des zones d'émetteur et de base allongées, encastrées les unes dans les autres sur le côté arrière, et procédé de fabrication de la cellule solaire
CN101952972B (zh) * 2007-12-11 2012-02-15 太阳能研究所股份有限公司 背面具有细长交叉指状发射极区域和基极区域的背接触式太阳能电池及其生产方法
WO2009074469A3 (fr) * 2007-12-11 2009-09-24 Institut Für Solarenergieforschung Gmbh Cellule solaire à contact arrière comportant des zones d'émetteur de côté arrière de grande surface et procédé de fabrication de la cellule solaire
CN102084491A (zh) * 2008-07-01 2011-06-01 太阳能研究所股份有限公司 带有具有整合的掺杂分布的吸收体的异质结太阳能电池
WO2010000716A2 (fr) * 2008-07-01 2010-01-07 Institut Für Solarenergieforschung Gmbh Cellule solaire à hétérojonction avec absorbeur à profil de dopage intégré
WO2010000716A3 (fr) * 2008-07-01 2010-03-11 Institut Für Solarenergieforschung Gmbh Cellule solaire à hétérojonction avec absorbeur à profil de dopage intégré
EP2219222A3 (fr) * 2009-02-04 2013-02-20 Lg Electronics Inc. Cellule solaire et son procédé de fabrication
CN102044579A (zh) * 2009-09-07 2011-05-04 Lg电子株式会社 太阳能电池
WO2011073868A2 (fr) 2009-12-14 2011-06-23 Total S.A. Cellule photovoltaïque heterojonction a contact arriere
CN102770973A (zh) * 2009-12-21 2012-11-07 现代重工业株式会社 背面场型异质结太阳能电池及其制造方法
DE102010007695A1 (de) * 2010-02-09 2011-08-11 Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109 Rückseitenkontaktierte Solarzelle mit unstrukturierter Absorberschicht
EP2555251A4 (fr) * 2010-03-31 2017-04-19 Panasonic Intellectual Property Management Co., Ltd. Procédé de fabrication de cellule solaire et cellule solaire
WO2012018119A1 (fr) * 2010-08-06 2012-02-09 三洋電機株式会社 Cellule solaire et procédé de fabrication de cellule solaire
EP2421057A3 (fr) * 2010-08-17 2013-10-16 Lg Electronics Inc. Cellule solaire
US8633379B2 (en) 2010-08-17 2014-01-21 Lg Electronics Inc. Solar cell
US9257593B2 (en) 2011-03-25 2016-02-09 Panasonic Intellectual Property Management Co., Ltd. Method for producing photoelectric conversion element
EP2690666A4 (fr) * 2011-03-25 2014-09-03 Sanyo Electric Co Procédé de fabrication d'un élément de conversion photoélectrique
EP2690666A1 (fr) * 2011-03-25 2014-01-29 Sanyo Electric Co., Ltd. Procédé de fabrication d'un élément de conversion photoélectrique
US9748418B2 (en) 2011-05-27 2017-08-29 Rec Solar Pte. Ltd. Solar cell and method for producing same
US10461208B2 (en) 2011-05-27 2019-10-29 Rec Solar Pte. Ltd. Solar cell and method for producing same
WO2012163517A2 (fr) 2011-05-27 2012-12-06 Renewable Energy Corporation Asa Cellule solaire et procédé pour sa production
TWI555220B (zh) * 2011-05-27 2016-10-21 Ｒｅｃ太陽能公司 太陽能電池及其製造方法
EP2575184B1 (fr) * 2011-09-29 2017-12-06 LG Electronics Inc. Module de cellule solaire
US11605750B2 (en) 2012-03-23 2023-03-14 Sunpower Corporation Solar cell having an emitter region with wide bandgap semiconductor material
US12009449B2 (en) 2012-03-23 2024-06-11 Maxeon Solar Pte. Ltd. Solar cell having an emitter region with wide bandgap semiconductor material
US10957809B2 (en) 2012-03-23 2021-03-23 Sunpower Corporation Solar cell having an emitter region with wide bandgap semiconductor material
US10490685B2 (en) 2012-03-23 2019-11-26 Sunpower Corporation Solar cell having an emitter region with wide bandgap semiconductor material
US10170657B2 (en) 2012-03-23 2019-01-01 Sunpower Corporation Solar cell having an emitter region with wide bandgap semiconductor material
GB2503515A (en) * 2012-06-29 2014-01-01 Rec Cells Pte Ltd A rear contact heterojunction solar cell
CN104620395A (zh) * 2012-09-12 2015-05-13 夏普株式会社 光电转换元件以及光电转换元件的制造方法
CN104282782A (zh) * 2013-07-05 2015-01-14 Lg电子株式会社 太阳能电池及其制造方法
US10833210B2 (en) 2013-07-05 2020-11-10 Lg Electronics Inc. Solar cell and method for manufacturing the same
EP2822041A1 (fr) * 2013-07-05 2015-01-07 LG Electronics, Inc. Cellule solaire et son procédé de fabrication
US20160336464A1 (en) * 2014-01-29 2016-11-17 Panasonic Intellectual Property Management Co., Ltd. Solar cell
US10014420B2 (en) * 2014-01-29 2018-07-03 Panasonic Intellectual Property Management Co., Ltd. Solar cell
EP3029740A1 (fr) * 2014-12-03 2016-06-08 Sharp Kabushiki Kaisha Dispositif photovoltaïque
WO2017076832A1 (fr) 2015-11-02 2017-05-11 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Dispositif photovoltaïque et son procédé de fabrication
EP3163632A1 (fr) 2015-11-02 2017-05-03 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Dispositif photovoltaïque et son procédé de fabrication
CN105932089A (zh) * 2016-06-24 2016-09-07 深圳大学 无界面掺杂的背接触硅异质结太阳能电池及其制备方法
CN110416344A (zh) * 2019-07-10 2019-11-05 中山大学 一种硅基硫化锑异质结太阳电池及其制备方法

Also Published As

Publication number Publication date
JP2003298078A (ja) 2003-10-17
AU2003217486A1 (en) 2003-10-13

Similar Documents

Publication Publication Date Title
WO2003083955A1 (fr) Element photovoltaique et procede de fabrication
US10957809B2 (en) Solar cell having an emitter region with wide bandgap semiconductor material
US5441577A (en) Thin film solar cell and production method therefor
US5665607A (en) Method for producing thin film solar cell
JP5421701B2 (ja) 結晶シリコン太陽電池及びその製造方法
CN101567408B (zh) 光电转换装置的制造方法
JP2010518609A (ja) ハイブリッドシリコン太陽電池及び該ハイブリッドシリコン太陽電池の製造方法
WO2003083953A1 (fr) Pile solaire et procede permettant de la produire
CN115188837B (zh) 一种背接触太阳能电池及制备方法、电池组件
TW201733150A (zh) 光電轉換裝置之製造方法
JPH05235391A (ja) 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法
US20140014169A1 (en) Nanostring mats, multi-junction devices, and methods for making same
JP4314716B2 (ja) 結晶シリコン薄膜光起電力素子
JP5747304B2 (ja) 表面処理方法及び太陽電池セルの製造方法
JP3540149B2 (ja) プラズマｃｖｄによる薄膜堆積方法
JP4693505B2 (ja) 光電変換装置およびそれを用いた光発電装置
CN205810839U (zh) 硅基异质接面太阳能电池
JP2002343990A (ja) 光起電力素子
CN110809827A (zh) 光电转换装置的制造方法
JP2005286067A (ja) 多結晶シリコン膜の形成方法
CN107403852A (zh) 硅基异质接面太阳能电池及其制程方法
JPH05175526A (ja) 結晶太陽電池およびその製造方法
JP2004172269A (ja) シリコン光起電力素子の製造装置、シリコン光起電力素子及びその製造方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase