Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
  • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
  • H10W20/48—Insulating materials thereof
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
  • C09D183/02—Polysilicates
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
  • C09D183/04—Polysiloxanes
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/31504—Composite [nonstructural laminate]
  • Y10T428/31652—Of asbestos
  • Y10T428/31663—As siloxane, silicone or silane

Definitions

• the present invention relates to a composition for forming a silica-based coating, a silica-based coating, a method for producing a silica-based coating, and an electronic component.
• the signal propagation speed (V) of a wiring and the relative dielectric constant ( ⁇ ) of an insulating material with which a wiring material contacts show a relationship represented by the following expression (3) (k in the expression is a constant).
• ⁇ the relative dielectric constant of the insulating material
• SiO 2 film formed by a CVD method with a specific dielectric constant of about 4.2 has been used as a material for forming an interlayer insulating film, but the inter-wiring capacitance of a device has been reduced, and From the viewpoint of improving the operation speed of a device, there is a strong demand for a material exhibiting a further lower dielectric constant.
• a low dielectric constant material currently in practical use is a Si OF film formed by a CVD method with a relative dielectric constant of about 3.5.
• Examples of the insulating material having a relative dielectric constant of 2.5 to 3.0 include organic SOG (Spin On Glass) and organic polymers. Furthermore, as an insulating material having a relative dielectric constant of 2.5 or less, a porous material having voids in the film is considered to be promising, and studies and developments for application to an interlayer insulating film of LSI are being actively conducted. Have been done.
• Japanese Unexamined Patent Application Publication Nos. Hei 11-322992 and Hei 11-1310411 propose a method of reducing the dielectric constant of an organic SOG material. ing.
• a film is formed from a composition containing a polymer having a property of volatilizing or decomposing by heating together with a hydrolysis-condensation product of a metal alkoxysilane, and pores are formed by heating the film. Things.
• the heating temperature at the time of final curing of the coating film is as high as 450 ° C. or higher, and the curing tends to require a long time of about one hour. If this happens, the heat input (thermal budget) will increase excessively, and there is a concern that the wiring layers among the lower layers will deteriorate. Further, when the amount of heat input increases, the warpage of the substrate becomes significant, which may cause a problem.
• the miniaturization of wiring due to high integration is accelerating, and the material layers such as thinning and multi-layering of each member layer constituting the device and the change of materials such as wiring layers are progressing.
• the effect of material deterioration in each layer due to heat input is expected to be greater than ever, and there is an urgent need to improve the thermal history by reducing the heat load in each process.
• the present inventors need to introduce a very large amount of holes (voids) into the film in order to achieve the desired low dielectric constant required for the insulating film when using the above conventional method. I found that. In this case, if the mechanical strength or hardness of the SOG, which is the base material of the film, is inherently insufficient, the porosity is excessively increased, and the mechanical strength of the film is further reduced. There is a tendency. In other words, in such a conventional method, as the dielectric constant of the insulating film decreases, the film strength tends to decrease, and there is a major problem from the viewpoint of process compatibility.
• a silica-based coating is applied to the interlayer insulating film of the Cu-damascene process. If, when the S I_ ⁇ 2 film or the like which is deposited by the CVD method is weakened adhesion (bondability) in a force their interface which is used as a cap film, extra C u generated when the wiring metal laminated Interface peeling may occur in the Cu—CMP (Chemical Mechanical Polish) process of polishing the film.
• the dielectric constant may increase due to moisture absorption or the desorbed gas may increase. When these situations occur, it is extremely inconvenient in terms of process suitability.
• the present invention has been made in view of such circumstances, and it is possible to obtain a silica-based coating having excellent low dielectric properties and sufficient mechanical strength, and to form the silica-based coating at a low temperature or at a low temperature.
• An object of the present invention is to provide a film-forming composition, a silica-based film obtained by using the same, a method for producing the same, and an electronic component including the silica-based film.
• the present inventors focused on the curing behavior when forming a silica-based coating from a liquid composition, and conducted intensive research from the viewpoint of the material components of the composition and the composition thereof.
• the present invention has been completed.
• the composition for forming a silica-based film according to the present invention comprises a siloxane resin, has fluidity, and cures when heat is applied in a film state applied on a substrate.
• a silica-based coating is formed, the stress of the silica-based coating obtained when pre-cured by heating at 150 ° C for 3 minutes becomes 10 MPa or more, and due to final curing.
• the resulting silica-based coating is characterized in that it has curing properties such that the relative dielectric constant is less than 3.0.
• stress refers to a value obtained by the following method.
• a silica-based film forming composition is applied to a predetermined Si wafer so as to have a constant thickness to form a film. Specifically, based on the orientation flat of a 5-inch outer diameter Si wafer (thickness: 625 ⁇ 25; ⁇ ), a thin-film stress measurement device (KLA Tencor Corp., model: FLX- 2320), and measure the amount of warpage (initial value) of this Si wafer in an atmosphere with an ambient temperature of 23 ° C, soil 2 ° C, and humidity of 40% and soil 10%. Keep it.
• the Si wafer is taken out of the apparatus, and a composition for forming a silicon-based coating is applied thereon by spin coating to form a coating. Thereafter, the Si wafer is subjected to a heat treatment under a hot plate condition of 150 ° C. for 3 minutes to remove a solvent and the like contained in the composition, and pre-cured to form a silica-based film. After the heating, the thickness of the silica-based coating is measured. Next, the Si wafer is housed in a predetermined position in the above-mentioned apparatus (FLX-2320) with the orientation flat as a reference in the same manner as before the film formation, and the amount of warpage of the Si wafer is measured. I do.
• ⁇ is the stress (MPa) of the silica-based coating
• E is the Young's modulus of the Si wafer.
• b indicates the thickness of Si wafer m
• v indicates Poisson's ratio of Si wafer (1)
• 1 indicates surface roughness when 'warpage' is determined.
• d indicates the thickness of the silica-based coating (Aim)
• ⁇ indicates the Si wafer.
• the amount of displacement of 'warpage' (ie the absolute value of the difference between the initial value of 'warpage' and the value after heat treatment)
• the composition for forming a silica-based film of the present invention is applied onto a substrate such as a wafer and then cured by heating to form a silica-based film (Lowk film) exhibiting a low dielectric constant.
• a bond forming a siloxane skeleton tends to be formed to some extent even by such low-temperature heat treatment.
• composition for forming a silica-based coating include: (a) a component represented by the following formula (1);
• R 1 is an H atom or an F atom, or a group containing a B atom, an N atom, an A 1 atom, a P atom, a Si atom, a Ge atom or a Ti atom, or a group having 1 to 20 carbon atoms.
• X represents an organic group; X represents a hydrolyzable group; n represents an integer of 0 to 2; when n is 2, each R 1 may be the same or different; when n is 0 to 2, Each X may be the same or different), a siloxane resin obtained by hydrolyzing and condensing a compound represented by the following formula: (b) component: a solvent capable of dissolving component (a), and (c) component: It is preferable that the composition contains a sodium salt and a (d) component: a pyrolytic volatile compound that thermally decomposes or volatilizes at a heating temperature of 250 to 500 ° C.
• a silica-based coating cured by such a heat treatment tends to have an increased stress as described above and disadvantageous in device characteristics.
• the composition of the invention Since the stress of the silicide-based coating is alleviated by the curing history due to the application, the influence of such stress can be reduced.
• the component (a) is composed of H atom, F atom, B atom, N atom, A1 atom, P atom, Si atom, Ge atom, Ti atom, and C atom per mole of Si atom.
• the total content of at least one atom selected from the group consisting of atoms is preferably 0.65 mol or less, more preferably 0.55 or less, further preferably 0.50 or less, and particularly preferably 0.45 or less. These are: Further, the lower limit of the total content ratio is desirably about 0.20. By doing so, the adhesion of the silica-based coating to another film (layer) and the decrease in mechanical strength are suppressed.
• the composition for forming a silica-based film according to the present invention comprises a siloxane resin, has fluidity, and cures when heat is applied in a film state applied on a substrate.
• a silica-based film is formed, and is preliminarily cured at a first heating temperature in a film state, and then finally cured at a second heating temperature higher than the first heating temperature.
• the second stress of the silica-based coating when finally cured at the second heating temperature is smaller than the first stress of the silicic coating when cured at the first heating temperature. It has characteristics.
• the first heating temperature 1 ⁇ is preferably 100 or more and less than 350 ° C, more preferably 150 to 300 ° C. C, unless preferably at a temperature in the range of 1 5 0 ⁇ 2 5 0 ° C , the temperature der within the range of the second heating temperature T 2 is preferably 3 5 0 ⁇ 5 0 0 ° C Rutoki It is preferable to have the above-mentioned curing characteristics.
• stress in “first stress” and “second stress” is a value obtained by the following method5. [Stress evaluation method]
• a silica-based film forming composition is applied to a predetermined Si wafer so as to have a constant thickness to form a film.
• a thin-film stress measurement device (a device manufactured by KLA Tencor, model: FLX-2320) It is stored in a predetermined position in the inside, and the amount of 'warpage' (initial value) of this Si wafer is measured in an atmosphere with an ambient temperature of 23 ° C ⁇ 2 ° C, a humidity of 40%, and a soil of 10%. deep.
• the Si wafer is taken out of the apparatus, and a composition for forming a silicon-based coating is applied thereon by spin coating to form a coating. Thereafter, the Si wafer is heated under a hot plate condition at a predetermined first heating temperature (for example, 150./1 minute + 250.1 / 1 minute) to remove the solvent and the like contained in the composition. Removed and pre-cured to form a silica-based coating (pre-curing step). After the heating, the thickness of the silica-based coating is measured. Next, this Si wafer is accommodated in a predetermined position in the above-mentioned apparatus (FLX-2320) with reference to the orientation flat in the same manner as before the film formation, and the amount of warpage of the Si wafer is measured. I do.
• a predetermined first heating temperature for example, 150./1 minute + 250.1 / 1 minute
• the Si wafer that has undergone the preliminary curing step is subjected to a heat treatment at a second heating temperature T 2 ° C (for example, 400 ° C / 30 minutes) and finally cured in a nitrogen (N 2 ) gas atmosphere. (Final curing step). Then, the thickness of the obtained silica-based coating is measured, and the amount of warpage of the Si wafer is measured in the same manner as the other Si wafers described above.
• T 2 ° C for example, 400 ° C / 30 minutes
• N 2 nitrogen
• ⁇ indicates the stress (MPa) of the silica-based film
• E indicates the Young's modulus (dyn / cm 2 ) of the Si wafer
• b indicates the thickness m of the Si wafer
• v indicates the thickness of the Si wafer.
• i indicates the Poisson's ratio of the wafer (1)
• 1 indicates the scanning distance (mm) of the surface roughness meter when determining warpage
• d indicates the thickness (im) of the silica-based coating.
• ⁇ is the amount of displacement of the 'warp' of the Si wafer (that is, the absolute value of the difference between the initial value of 'warp' and the value after heat treatment) ( ⁇ m).
• the stress value calculated for the silica-based coating on the Si wafer pre-cured at the first heating temperature is the “first stress”, while the final curing temperature at the second heating temperature T 2 ° C
• the stress value calculated for the silica-based coating on the processed Si wafer is the “second stress”.
• stress in the present invention means its absolute value.
• Such a silicic film-forming / composition is applied on a substrate such as a wafer and then cured by heating to form a silica-based film (1 ⁇ 0- ) film exhibiting a low dielectric constant.
• the composition is gradually cured from the beginning to the end of the heating, and the stress increases accordingly.
• a heat treatment at the second heating temperature that is, a final hardening treatment is performed, the stress of the obtained silica-based coating decreases to a second stress smaller than the first stress.
• a silica-based film cured and formed by vigorous heat treatment has an increased stress as described above and tends to be disadvantageous in device characteristics.
• the composition of the present invention Since the stress of the silica-based coating is alleviated by the curing history due to the application of heat, the influence of such stress can be reduced.
• composition for forming a silicic force-based film include: (a) component: the following formula (1);
• R 1 is H atom or F atom, or B atom, N atom, A 1 atom, P atom X, a group containing a Si atom, a Ge atom or a Ti atom, or an organic group having 1 to 20 carbon atoms, X represents a hydrolyzable group, n represents an integer of 0 to 2, and n
• each R 1 may be the same or different, and when n is 0 to 2, each X may be the same or different.
• component a solvent capable of dissolving component (a)
• component onium salt
• component heat at a heating temperature of 250 to 500 ° C. It is preferable that it contains a thermally decomposed or volatile compound that decomposes or volatilizes.
• the presence of the onium salt as the component (c) promotes the dehydration-condensation reaction of the compound represented by the formula (1), thereby increasing the density of siloxane bonds by reducing Si-OH bonds.
• the pore formation process and the densification of the siloxane bond and the annealing effect at the time of final heating act in combination to cause stress relaxation of the film.
• the effect is not limited to this.
• the component (a) is composed of H atom, F atom, B atom, N atom, A1 atom, P atom, Si atom, Ge atom, Ti atom, and C atom per mole of Si atom.
• the total content of at least one atom selected from the group consisting of is preferably 0.65 mol or less, more preferably 0.55 or less, further preferably 0.50 or less, particularly preferably 0.45 or less. belongs to. Further, the lower limit of the total content ratio is desirably about 0.20. In this way, the adhesion of the silica-based coating to other films (layers) and the decrease in mechanical strength are suppressed.
• composition for forming a silica-based film according to the present invention comprises a siloxane resin, has fluidity, and cures when heat is applied in a state of a film applied on a substrate.
• a force-based film is formed, and the parameter value required in Modified-Edge Lift-OFF TEST (m-ELT) is 0.20 As described above, preferably 0.25 or more, more preferably 0.27 or more, particularly preferably 0.29 or more, and the relative permittivity of the silica-based coating obtained by final curing is less than 3.0. It is characterized by having such curing properties.
• the upper limit of is preferably about 0.6.
• m-ELT is the test method shown below, and is the physical property parameter obtained as a result of this test.
• a silica-based film forming composition is applied to a predetermined Si wafer so as to have a constant thickness to form a film.
• a silica-based coating composition is spin-coated on an 8-inch Si wafer (thickness: 725 ⁇ 25 ⁇ ) so that the thickness becomes 0.5 to 0.6 ⁇ .
• the Si wafer is heat-treated at 150 ° C. for 1 minute + 250 ° C. for 1 minute to remove the solvent and the like contained in the composition, and pre-cured.
• nitrogen (N 2 ) Heat treatment at 400 ° C for 30 minutes in a gas atmosphere for final curing to form a silica-based coating.
• a 3.5 cm X 7 cm portion of the center of the 8-inch Si Ueno with the silica-based coating formed in (1) above is used as a test piece.
• the thickness h i of the test piece is measured by a micro fine device manufactured by Union Too1.
• the surface of the test piece was treated for 150 seconds using a UV-ozone treatment device (manufactured by Oak Manufacturing Co., Ltd .; UV dry processor VUM-3073-B), and then Omega 9 9 manufactured by F1 ontier Semiconductor was used. Epoxy is applied to a thickness of about 200 using BY K—Gardner Film Casting Knife. Subsequently, the test piece is dried for 1 hour with a dangerous goods type high temperature dryer (manufactured by Kusumoto Kasei; EHT-H02 ETAC) maintained at 177 ° C.
• a dangerous goods type high temperature dryer manufactured by Kusumoto Kasei; EHT-H02 ETAC
• test piece is cut into a 1 cm square with a diamond cutter, and the thickness h2 at the four corners (tops) is measured by the above-mentioned apparatus used for the measurement of hi. Furthermore, the test piece cut into a 1 cm square was placed on the stage in the chamber of the m_ELT device (made by Modern Metalcraft), and the following temperature program:
• the parameters of the m-ELT obtained in this way are indices indicating the adhesion between the silica-based coating and the underlayer and the strength of the film itself. Force) is high and the film strength is excellent.
• the I value is less than 0.2
• the adhesion between the S I_ ⁇ 2 film coating and the base are attenuated non convenience
• the Cu-CMP process for polishing extra Cu wiring generated when the wiring metal is laminated a serious problem may occur when peeling or cohesive rupture of the film itself occurs.
• Such a thread-forming material for forming a sily-based coating include: (a) component: the following formula (1);
• R 1 is an H atom or an F atom, or a group containing a B atom, an N atom, an A 1 atom, a P atom, a Si atom, a Ge atom or a Ti atom, or a group having 1 to 20 carbon atoms.
• X represents an organic group
• X represents a hydrolyzable group
• ⁇ represents an integer of 0 to 2
• each R 1 may be the same or different
• component (c) onium salt
• component (d) heat that thermally decomposes or volatilizes at a heating temperature of 250 to 500 ° C. It is preferable that the composition contains a decomposition volatile compound.
• the component (a) is composed of H atom, F atom, B atom, N atom, A1 atom, P atom, Si atom, Ge atom, Ti atom, and C atom per mole of Si atom.
• the total content of at least one atom selected from the group consisting of atoms is preferably 0.65 mol or less, more preferably 0.55 or less, further preferably 0.50 or less, and particularly preferably 0.45 or less. belongs to. Further, the lower limit of the total content ratio is preferably about 0.20. In this way, the adhesion of the silica-based coating to other films (layers) and the decrease in mechanical strength are suppressed.
• the present inventors have conducted extensive research from the viewpoints of material components for obtaining a silica-based coating as an insulating film and the composition thereof, and have found that a composition containing a specific component has various problems.
• the inventors have found that the points can be solved, and have completed the present invention.
• composition for forming a sily-based coating film according to the present invention comprises: (a) a component: the following formula (1); i X 4 — n 1 (1)
• R 1 is an H atom or an F atom, or a group containing a B atom, an N atom, an A 1 atom, a P atom, a Si atom, a Ge atom, or a Ti atom, or a carbon number.
• X represents an organic group of 1 to 20, X represents a hydrolyzable group, n represents an integer of 0 to 2, and when n is 2, each R 1 may be the same or different, and n is 0 to When 2, each X may be the same or different.
• M in equation (2). H indicates the concentration (mo1 / g) of the hydroxyl group in the polymer (e).
• compositions having such a structure after being coated on a substrate such as a wafer, thus being cured in the heating, silica-based film that express a low dielectric constant (teeth 0 -1 ⁇ film) Ru formed.
• a low dielectric constant titanium 0 -1 ⁇ film
• phase separation between the siloxane resin as the component (a) and the above polymer is prevented when the solvent as the component (b) is volatilized.
• the pores formed inside the film can be made finer and uniform in shape.
• the decomposition of component (e) during heating is suppressed and its volatilization is promoted.
• the component (a) is composed of H atom, F atom, B atom, N atom, Al atom, P atom, Si atom, Ge atom, Ti atom, and C atom per mole of Si atom.
• the total content of at least one atom selected from the group consisting of atoms is preferably 0.65 mol or less, more preferably 0.55 or less, further preferably 0.50 or less, and particularly preferably 0.45 or less. These are: Further, the lower limit of the total content ratio is desirably about 0.20. By doing so, the adhesion of the silica-based coating to another film (layer) and the decrease in mechanical strength are suppressed.
• the component (b) has a mass content ratio of the first solvent component to the second solvent of 1:99 to 60:40. By doing so, a decrease in mechanical strength of the silica-based coating can be sufficiently suppressed, and deterioration in physical properties such as uniformity of the film thickness is suppressed.
• the first solvent component is alkylenedaricol methyl ether acetate or propylene glycol alkyl ether acetate, especially propylene glycol methyl ether acetate.
• the second solvent component is propylene glycol monopropyl ether.
• temperature 3 0 0 ⁇ 5 0 0 D C is preferably reduction rate in a nitrogen gas atmosphere 9 5 mass% or more, more preferably 9 7 mass% or more, more preferably 9 9 wt% It is preferable that the above polymer is used.
• a component (e) it is sufficiently ensured that the polymer or the reaction product derived from the polymer remains in the silica-based coating finally obtained when the composition is heated. Is suppressed.
• the component (e) has an ester bond in the molecule.
• decomposition or volatilization of the polymer when the composition is heated is further promoted.
• component, (meth) contains as a constituent component an acrylic acid derivative, and, (meth) concentration of the acrylic acid derivative 0. 5 X 1 0- 2 ( mo 1 / g) or more It is useful to have This has advantages such as further promoting decomposition or volatilization of the polymer when the composition is heated.
• the onium salt as the component (C) is not particularly limited, but is preferably an ammonium salt from the viewpoint that the electrical properties and mechanical properties of the obtained silica-based coating can be further improved and the stability of the composition can be enhanced. Useful.
• the composition for forming a silica-based film of the present invention further comprises nitric acid.
• nitric acid functions as a catalyst for promoting the hydrolysis-condensation reaction in the hydrolysis-condensation of the compound represented by the formula (1).
• nitric acid there are substances other than nitric acid exhibiting such a catalytic function.
• the hardness of the silica-based coating obtained by heat curing can be increased.
• the silica-based coating according to the present invention comprises a cured film formed by applying the silica-based coating forming composition of the present invention on a substrate such as a Si wafer and heating the applied coating. is there.
• the silica-based coating of the present invention obtained from the composition for forming a silica-based coating of the present invention has a relative dielectric constant of less than 3.0 as described above, preferably 2.7 or less, and 2.5 or less. It is more preferably at most 2.2, particularly preferably at most 2.2.
• the relative permittivity of the silica-based film is preferably as small as possible from the viewpoint of using an interlayer insulating film or the like, but the lower limit is about 1.5 in terms of preventing a decrease in mechanical strength of the film. Is desirable.
• the “relative dielectric constant” of the silica-based coating in the present invention refers to a value measured in an atmosphere at 23 ° C. ⁇ 2 ° C. and a humidity of 40 ⁇ 10%, and A 1 metal and It can be obtained by measuring the charge capacity between N-type low resistivity substrates (Si wafers). Specifically, first, a silica-based coating for measuring the relative permittivity is formed.
• a composition for forming a silica-based film is applied on an N-type low-resistivity Si wafer (resistivity ⁇ 10 ⁇ cm) by spin coating so that the film thickness becomes 0.5 to 0. Form a coating.
• the solvent in the composition was heated on a hot plate heated to 200 ° C. Is removed, and further heated at 400 ° C. for 30 minutes in a nitrogen (N 2 ) gas atmosphere to be finally cured to form a silica-based film.
• A1 metal is vacuum-deposited on the silica-based coating using a vacuum deposition apparatus so as to have a thickness of about 0.1 ⁇ in a circle having a diameter of 2 mm.
• a structure in which the insulating film is disposed between the Al metal and the low resistivity substrate is formed.
• the charge capacity of this structure was transferred to an LF impedance analyzer (Yokogawa Electric Corp .: HP 4192A), and a dielectric test fixture (Yokogawa Electric Corp .: HP 1645 1B) was used. Measure at a working frequency of 1 MHz using a device connected to.
• the dielectric constant of the silica-based coating film 3. 5 9 7 X 1 0- 2 X charge capacity thickness of (p F) X film
• the silica-based coating according to the present invention is excellent in low dielectric constant.
• the content of the component (d) in the composition is determined as follows. It is effective to increase the amount of micropores introduced into the film by adjusting.
• the relative dielectric constant is as low as possible under the condition that no micropores are introduced! / It is preferable to form a silica-based coating using a composition for forming a silica-based coating having a composition capable of obtaining a film.
• the modulus of elasticity of the silica-based coating is preferably 2.5 GPa or more, more preferably 3.0 GPa or more, still more preferably 3.5 GPa or more, and 4.OGPa or more. It is particularly preferred that it is more than 4.5 GPa.
• the upper limit is not particularly limited, but is usually about 3 OGPa. If the elastic modulus is less than 2.5 GPa, for example, when the silica-based film is used as a semiconductor insulating film, there may be inconvenience such as difficulty in processing.
• the pores contained in the siloxane resin Although it is effective to reduce the ratio of porosity, as mentioned earlier, from the viewpoint of lowering the relative dielectric constant, it is advantageous to increase the amount of vacancies in the coating, and consider the balance between the two. It is desirable to do.
• the “elastic modulus” of the silica-based coating film in the present invention is an elastic modulus in the vicinity of the surface of the coating film, and is a value measured using a nano indenter DCM manufactured by MTS.
• a coating prepared in the same manner as described in [Relative permittivity measurement method] is used as the silica-based coating for measurement. At this time, if the thickness of the silica-based film is small, the influence of the underlayer is exerted. Therefore, as described above, the initial film thickness is preferably set to 0.5 to 0.6 ⁇ .
• the vicinity of the surface refers to a depth within 1Z10 of the film thickness, more specifically, a position at a depth of 15 nm to 50 nm from the film surface.
• the load and the load speed are calculated by the following equation (8);
• L indicates load
• t indicates time
• a Berkovic indenter material: diamond
• measurement is performed with the indenter amplitude frequency set to 45 Hz.
• the silica-based coating according to the present invention has (a large number of) pores having an average pore diameter of preferably 4.O nm or less, more preferably 3.O nm or less, and particularly preferably 2.2 nm or less. More preferably, As a result, a good low dielectric constant is reliably achieved while having sufficient mechanical strength such as CMP resistance. In this case, it is preferable that the average pore diameter is such that it is not difficult to form pores. Also, if the average pore size is extremely small, it may be difficult to achieve the required low dielectric constant.
• the maximum frequency pore diameter of the pores formed in the silica-based coating is preferably 2. It is desirable that the thickness be O nm or less, more preferably 1.5 nm or less. Even in this case, it is easy to achieve both sufficient mechanical strength and low dielectric constant.
• the “average pore diameter” refers to a pore distribution (Pore Distribution) measured on a thin film of a silica-based coating by X-ray diffuse scattering analysis using a generally used X-ray diffractometer. The average value of the pore diameters obtained is shown.
• the “maximum frequency pore size” in the present invention indicates a pore size having the largest appearance frequency in the pore distribution measured in the same manner.
• pores having a diameter of 10 nm or more do not substantially exist, in other words, the maximum value of the diameter of the formed pores is less than 10 nm. Specifically, it is preferable that the maximum pore diameter in the pore distribution measured as described above is less than 10 nm. As a result, crack initiation and growth of the film originating from the vacancies, and eventually film rupture are sufficiently prevented.
• substantially absent includes not only the case where the frequency is zero in the vacancy distribution but also the case where it is statistically judged that it is below the lower limit of detection of the measuring device.
• the method for producing a silica-based coating according to the present invention is characterized in that the composition for forming a silica-based coating of the present invention is applied on a substrate, and the applied coating is heated to cure the coating. More specifically, the method for producing a silica-based coating according to the present invention comprises applying the composition for forming a silica-based coating of the present invention onto a substrate, removing the solvent contained in the applied coating, and then removing the solvent. It is characterized in that the coating is fired at a heating temperature of 250 to 500 ° C.
• an electronic component (device) according to the present invention has an insulating film formed on a substrate on which an element structure is formed, and the insulating film is manufactured by the method for manufacturing a silica-based coating according to the present invention. It contains a silica-based coating or a silica-based coating thereof.
• FIG. 1 is a graph showing the pore distribution of the silica-based coatings of Examples 1-2 and the conventional product. BEST MODE FOR CARRYING OUT THE INVENTION
• the composition for forming a silica-based film according to the present invention comprises a siloxane resin, has fluidity, and cures when heat is applied in a film state applied on a substrate.
• the silica coating is formed by heating at 150 ° C for 3 minutes, and the stress of the silica coating becomes 1 OMPa or more, and the silica coating obtained by final curing It has a curing property such that the relative dielectric constant of the system coating is less than 3.0. Therefore, the formation of a siloxane skeleton in the film is started by a heat treatment at a low temperature of about 150 ° C.
• the amount of heat input to a substrate such as a wafer to which the composition is applied can be reduced. Therefore, it is possible to reduce the thermal effect on the underlying wiring layer and the like. Further, since the final curing treatment at a higher temperature can be performed in a short time, the amount of heat input can be further reduced.
• the composition for forming a silica-based film according to the present invention comprises a siloxane resin, has fluidity, and is heated when heat is applied in a film state applied on a substrate. Is cured at a first heating temperature in the film state, and then finally cured at a second heating temperature higher than the first heating temperature.
• the second stress of the silicon-based coating when finally cured at the second heating temperature is smaller than the first stress of the silicon-based coating when cured at the first heating temperature. It has such hardening characteristics.
• pre-curing can be performed in a low-temperature region before final curing
• the heat treatment at a relatively high temperature can be performed in a short time. Therefore, the amount of heat input to the substrate on which the composition is applied can be reduced. Therefore, it is possible to reduce the thermal effect on the underlying wiring layer and the like. Further, since the stress of the silica-based coating is relieved, it is possible to improve the adhesion with other layers (films).
• the composition for forming a silica-based film according to the present invention comprises a siloxane resin, has fluidity, and is capable of being applied when heat is applied in a film state applied on a substrate. It cures to form a silica-based coating, and the parameter value required for m-ELT is 0.20 or more, preferably 0.25 or more, more preferably 0.27 or more, and particularly preferably 0. Ri Aridea at 29 or higher and a relative dielectric constant of the silica-based coating film obtained by the final curing and has a 3. Naru be less than 0 curing characteristics. Further, the upper limit of is preferably about 0.6.
• a silica-based coating obtained from such a composition is used as an interlayer insulating film or the like of electronic components such as semiconductor devices
• the adhesiveness to the underlying layer or upper layer (other films) and the strength of the film itself are conventionally low. It is greatly improved compared to.
• an interface between the S i C film or the like used as a cap film, Oite the interface between the S i O 2 film is ⁇ Pi underlayer, resistance is increased against peeling resistance and cohesive failure during polishing, CMP Interface delamination in the process can be prevented, and cohesive failure can be suppressed.
• compositions for forming a silica-based coating film of the present invention include, for example, the following components (a), (b), (c), and (d) as essential components. Are included.
• the component (a) has the following formula (1):
• R 1 is an H atom or an F atom, or a group containing a B atom, an N atom, an A 1 atom, a P atom, a Si atom, a Ge atom or a Ti atom, or a carbon atom of 1
• R 1 represents an organic group of ⁇ 20
• X represents a hydrolyzable group
• n represents an integer of 0 to 2
• each R 1 may be the same or different
• n is 0 to When 2, each X may be the same or different.
• hydrolyzable group X examples include an alkoxy group, a halogen atom, an acetooxy group, an isocyanate group, and a hydroxyl group.
• an alkoxy group is preferable from the viewpoint of the liquid stability of the composition itself, the coating properties of the composition, and the like.
• Examples of the compound of formula (1) (alkoxysilane) in which the hydrolyzable group X is an alkoxy group include, for example, tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-iso-propoxysilane, tetra_n-butoxysilane , Tetra-sec-butoxysilane, tetra-tert-butoxysilane, tetraalkoxysilane such as tetraphenoxysilane, trimethoxysilane, triethoxysilane, tripropoxysilane, fluorotrimethoxysilane, fluorotriethoxysilane, methyltrimethoxysilane, methyltrisilane Ethoxysilane, methinolate n-propoxysilane, methinolate iso-propoxysilane, methinoletri-n-butoxysilane,
• the alkoxy group in each of the above alkoxysilane molecules is substituted with a halogen atom.
• the hydrolyzable group X is a halogen atom (halogen group)
• the alkoxy group in each of the above alkoxysilane molecules is substituted with a halogen atom. Examples include:
• examples of the compound of formula (1) (acetoxysilane) in which the hydrolyzable group X is an acetyloxy group include those in which the alkoxy group in each of the above-mentioned alkoxysilane molecules is substituted with an acetyloxy group.
• examples of the compound of formula (1) in which the hydrolyzable group X is an isocyanate group include those in which the alkoxy group in each of the above-mentioned alkoxysilane molecules is substituted with an isocyanate group.
• examples of the compound (hydroxysilane) of the formula (1) in which the hydrolyzable group X is a hydroxyl group include those in which the alkoxy group in each of the above alkoxysilane molecules is substituted with a hydroxyl group.
• a catalyst for accelerating the hydrolysis-condensation reaction in the hydrolysis-condensation of the compound represented by the formula (1) formic acid, maleic acid, fumaric acid, acetic acid, propionic acid, butanoic acid, pentanoic acid, hexanoic acid, Heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, Oxalic acid, adipic acid, sebacic acid, butyric acid, oleic acid, stearic acid, linoleic acid, linoleic acid, salicylic acid, benzoic acid, P-aminobenzoic acid, p-toluenesulfonic acid, phthalic acid, sulfonic acid, tartaric acid, Organic acids such as trifluoromethanesulfonic acid and the like, and inorganic acids such as hydrochloric acid, phosphoric acid, nitric acid, boric acid, sulfuric
• the use amount of this catalyst is preferably in the range of 0.001 to 1 mol per 1 mol of the compound represented by the formula (1). When the amount is more than 1 mol, gelation tends to be promoted at the time of hydrolytic condensation, and when it is less than 0.001 mol, the reaction does not substantially proceed.
• the alcohol by-produced by the hydrolysis may be removed using an evaporator or the like as necessary.
• the amount of water to be present in the hydrolysis-condensation reaction system can be appropriately determined.
• the amount of water is 0.5 to 2 with respect to 1 mol of the compound represented by the formula (1). It is preferable to set the value in the range of 0 mol.
• the amount of water is less than 0.5 mol or more than 20 mol, the film formability of the silica-based coating may be deteriorated and the storage stability of the composition itself may be reduced.
• the siloxane resin as the component (a) is measured by gel permeation chromatography (hereinafter, referred to as “GPC”) from the viewpoint of solubility in a solvent, mechanical properties, moldability, and the like.
• GPC gel permeation chromatography
• the mass average molecular weight converted using the calibration curve is preferably from 500 to 200,000, more preferably from 1,000 to 100,000. When the mass average molecular weight is less than 500, the film forming properties of the silicon-based coating tend to be poor. On the other hand, if the weight average molecular weight exceeds 20,000,000, the compatibility with the solvent tends to decrease.
• At least one atom selected from the group (hereinafter referred to as "specific bonding atom") Is preferably not more than 0.65, more preferably not more than 0.55, particularly preferably not more than 0.50, and most preferably not more than 0.45.
• the lower limit is preferably about 0.20.
• the total number (M) of the specific bonding atoms exceeds 0.65, the adhesiveness with other films (layers) of the finally obtained silica-based coating and mechanical strength tend to be poor.
• the total number (M) is less than 0.20, the dielectric properties when used as an insulating film tend to be poor.
• siloxane resin is one of H atom, F atom, N atom, Si atom, Ti atom and C atom among these specific bonding atoms in terms of the film forming property of the silica-based film. It is more preferable to include at least one of them. Among them, in terms of dielectric properties and mechanical strength, it is preferable to include at least one of H, F, N, Si, and C atoms. More preferred.
• the total number (M) can be obtained from the charged amount of the siloxane resin as the component (a).
• Ml is the total number of atoms bonded to a single (and only one) Si atom of a particular bond
• M2 is shared by two of the specific bond atoms
• M3 indicates the total number of atoms shared by three of the specific bonding atoms
• Msi indicates the total number of Si atoms.
• the component (b) is a solvent capable of dissolving the component (a), that is, the siloxane resin described above, and includes, for example, methanol, ethanol, n-propanol, i-propanol, n-butanol, i-butanol.
• Ether solvents such as 2-methyltetrahydrofuran; methyl acetate; ethyl acetate; n-propyl acetate; i-propyl acetate; n-butyl acetate; i-butyl acetate; sec-butyl acetate; n-pentyl acetate; sec-pentyl acetate; 3-Methoxybutyl acetate, methylpentyl acetate, 2-ethylbutyl acetate, 2-ethylhexyl acetate, benzyl acetate, cyclohexyl acetate, methylcyclohexyl acetate, Noel acetate, ⁇ -butyrolataton, ⁇ - pallet mouth ratataton, aceto Methyl acetate, acetoacetate acetate, ethylene glycol monomethynoate etherate, ethylene glycolate monoethylenate
• the amount of the solvent (that is, the component (b)) used is preferably such that the amount of the component (a) (siloxane resin) is 3 to 25% by mass. If the amount of the solvent is too small and the concentration of the component (a) exceeds 25% by mass, the film-forming properties of the silica-based film and the like tend to deteriorate, and the stability of the composition itself tends to decrease. On the other hand, when the amount of the solvent is excessive and the concentration of the component (a) is less than 3% by mass, the silica-based coating having a desired film thickness is obtained. It tends to be difficult to form a film.
• the component (C) is an o-salt, such as an ammonium salt, a phosphonium salt, an arso-um salt, a stibonium salt, an oxonium salt, a sulfonium salt, a selenodium salt, a stannonium salt, a jordonium salt and the like. No.
• ammonium salts are preferred in terms of better stability of the composition, for example, tetramethylammonium moxide, tetramethylammonium chloride, tetramethylammonium bromide, and tetramethylammonium bromide.
• Fluoride tetrabutylammonium moxide, tetrabutylammonium chloride, tetrabutylammonium bromide, tetrabutylammonium fluoride, tetramethylammonium nitrate, tetramethylammonium acetate, tetramethylammonium- Dumpropionate, tetramethylammonium maleate, tetramethylammonium sulfate and the like.
• tetramethylammonium nitrate tetramethylammonium acetate, tetramethylammonium propionate, tetramethylammonium maleate Salts and ammonium salts such as tetramethylammonium sulfate are particularly preferred.
• the amount of the onium salt used as the component (C) is preferably 0.001 ppm to 5%, more preferably 0.01 ppm to 1%, based on the total amount of the silica-based coating composition. %, More preferably 0.1 ppm to 0.5%.
• the amount is less than 0.001 ppm, the electrical properties and mechanical properties of the finally obtained silica-based coating tend to be inferior. On the other hand, if this amount exceeds 5%, the stability and film formability of the composition tend to be inferior, and the electrical properties and process suitability of the silica-based coating tend to decrease.
• These onium salts may be dissolved or diluted in water or a solvent, if necessary, and then added to a desired concentration.
• the pH is preferably 1.5 to 10, more preferably 2 to 8, and particularly preferably 3 to 6. If the pH is less than 1.5, or if the pH exceeds S10, the composition tends to be inferior in stability, film forming property, and the like.
• the component (d) is a pyrolytic volatile compound that thermally decomposes or volatilizes at a heating temperature of 250 to 500 ° C., for example, a polymer having a polyalkylene oxide structure, (meth) acrylate System polymers, polyester polymers, polycarbonate polymers, polyanhydride polymers, tetrakissilanes and the like.
• polyalkylene oxide structure examples include a polyethylene oxide structure, a polypropylene oxide structure, a polytetramethylene oxide structure, and a polybutylene oxide structure.
• polyoxyethylene alkyl ethers polyoxyethylene sterolone ethers, polyoxyethylene lanolin derivatives, ethylene oxide derivatives of alkyl phenolic formalin condensates, polyoxyethylene polyoxypropylene block copolymers, polyoxyethylene Ether-type compounds such as xylethylene polyoxypropylene / lequinolete ether, ether ester-type compounds such as polyoxyethylene glycerin fatty acid ester, polyoxyethylene sorbitol fatty acid ester, polyoxyethylene fatty acid alkanolamide sulfate, polyethylene glycol Fatty acid ester, ethylene dalicol fatty acid ester, fatty acid monoglyceride, polyglycerin fatty acid ester, sorbitan fatty acid ester, propylene glycol And the like ether ester type compounds such as co Lumpur fatty Esuteru.
• the acrylate and methacrylate constituting the (meth) acrylate polymer include alkyl acrylate, alkyl methacrylate, alkoxyalkyl acrylate, alkyl methacrylate, and alkoxyalkyl methacrylate. And the like.
• alkyl acrylate include those having 1 to 1 carbon atoms such as methyl acrylate, ethyl acrylate, n-propyl acrylate, isopropyl acrylate, n-butyl acrylate, isobutyl acrylate, pentyl acrylate and hexyl acrylate. And the like.
• alkyl methacrylate examples include methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, isobutyl methacrylate, pentyl methacrylate, and hexyl methacrylate.
• alkyl esters having 1 to 6 carbon atoms examples include alkyl esters having 1 to 6 carbon atoms.
• examples of the alkoxyalkyl acrylate include methoxymethyl acrylate and ethoxyl acetyl acrylate.
• examples of the alkoxyalkyl methacrylate include methoxymethyl methacrylate and ethoxyethyl methacrylate.
• acrylic acid and methacrylic acid having a hydroxyl group examples include 2-hydroxylethyl acrylate, 2-hydroxylpropyl acrylate, 2-hydroxylethyl methacrylate, 2-hydroxyl methacrylic acid pill, and the like.
• No. (Meth) acrylic acid, (meth) acrylic acid alkyl ester, (meth) acrylic acid alkoxyalkyl ester, and (meth) acrylic acid having a hydroxy group, which constitute a (meth) acrylate polymer, may be used alone or Used in combination of two or more.
• examples of the polycarbonate include polycondensates of carbonic acid such as polyethylene carbonate, polypropylene carbonate, polytrinotylene carbonate, polytetramethylene carbonate, polypentamethylene carbonate, polyhexamethylene carbonate, and alkylenedaricol. Can be mentioned.
• polyanhydride examples include polycondensates of dicarboxylic acids such as polymalonyloxide, polyadipoinoleoxide, polypimeyloxide, polysuberoyloxide, polyazelayloxide, and polysebacyloxide.
• dicarboxylic acids such as polymalonyloxide, polyadipoinoleoxide, polypimeyloxide, polysuberoyloxide, polyazelayloxide, and polysebacyloxide.
• tetrakissilanes include tetrakis (trimethylsiloxy) silane, tetrakis (trimethylsilyl) silane, tetrakis (methoxetoxy) silane, tetrakis (methoxethoxyethoxy) silane, tetrakis (methoxypropoxy) silane and the like. Can be mentioned.
• the thermally decomposable volatile compound as the component (d) is thermally decomposed or volatilized at a temperature lower than 250 ° C., it will be thermally decomposed and volatilized before the siloxane skeleton is formed. Characteristics may not be obtained.
• the thermally decomposed volatile compound is thermally decomposed or volatilized at a temperature exceeding 50 ° C., the wiring metal may be deteriorated. Therefore, if it is thermally decomposed or volatilized in such a temperature range, there is an advantage that the dielectric characteristics of the insulating film can be easily adjusted while suppressing the deterioration of the wiring metal.
• the composition for forming a silicon-based coating film of the present invention desirably does not contain an alkali metal or an alkaline earth metal, and even if it does, the metal ion concentration in the composition is reduced. It is preferably at most 100 ppb, more preferably at most 200 ppb.
• the concentration of these metal ions exceeds 100 ppb, the metal ions tend to flow into the semiconductor element having the silicic coating obtained from the yarn, which may adversely affect the device performance itself. Therefore, it is effective to remove the alkali metal or alkaline earth metal from the composition by using an ion exchange filter or the like as necessary.
• Such a composition for forming a silicic-based film is applied onto a substrate such as a wafer as described later and then cured by heating and baking, whereby a silica-based film (Lowow) exhibiting a low dielectric constant is obtained. —K B) is formed.
• fine pores voids, pores
• the pores can be further refined and uniform in shape at the final curing. .
• the onium salt as the component (c) as an essential component
• the mechanical strength and electrical reliability of the coating are improved. Therefore, for example, when CMP is performed in a later step, separation at the interface between the silica-based coating and another layer (film) can be prevented. Although the details of the mechanism of this effect are still unclear, the mechanical strength of the ionic bond promotes the dehydration condensation reaction, increases the density of siloxane bonds, and reduces the remaining silanol groups. It is presumed that one factor is that the dielectric properties are improved.
• the annealing effect that can be exerted at the time of final heating acts in a combined manner, and it is considered that stress relaxation of the entire film is caused.
• the effect is not limited to these.
• the total number of bonding atoms in the siloxane resin is set to 0.65 or less, more sufficient mechanical strength can be realized, and sufficient adhesiveness with other films (layers) is ensured. Accordingly, it is possible to further prevent the occurrence of interface peeling in the Cu-CMP process for polishing an extra Cu film generated when the wiring metal is laminated.
• a method for forming a silica-based coating on a substrate using the composition for forming a silica-based coating of the present invention as described above is exemplified by a spin coating method which generally has excellent film-forming properties and film uniformity of a silica-based coating. explain.
• a liquid silica-based film forming composition is applied to a substrate such as an Si wafer to form a film, and the film is subjected to a pre-curing step and a subsequent final curing step, whereby the present invention is performed.
• This is a method for forming the silica-based coating of the present invention.
• the silica-based film forming composition is spin-coated on a substrate such as a Si wafer at preferably 500 to 500 rpm / min, more preferably 100 to 300 rpm / min. To form a coating. At this time, if the number of rotations is less than 500 rotations / minute, the film uniformity tends to deteriorate, while if the number of rotations exceeds 500 rotations Z, the film-forming properties may deteriorate. Not preferred.
• a preliminary curing step is performed on the coating.
• This step is a step for drying the solvent in the composition and increasing the degree of curing of the siloxane resin. 100 to 350 ° C., more preferably 150 to 300 ° C. C, particularly preferably at a temperature of 150 to 250 ° C. (The heat treatment is performed at the first heating temperature.
• the pre-curing step may be performed by multi-stage heating at different temperatures, if necessary.) Good.
• the heating temperature 1 ⁇ is less than 100 ° C., the solvent tends to be insufficiently dried. On the other hand, if the heating temperature 1 ⁇ exceeds 350 ° C, the pyrolysis volatile compound for forming porous material (component (d)) will be pyrolyzed and volatilized before the siloxane skeleton is formed in the coating. However, it may be difficult to obtain a silica-based coating having desired mechanical strength and low dielectric properties.
• the heating time in the pre-curing step is preferably 1 second to 1 hour, more preferably 2 seconds to 10 minutes, further preferably 10 seconds to 5 minutes, and particularly preferably 30 seconds to 3 minutes. is there. If the heating time is less than 1 second, the solvent tends to be insufficiently dried, and the curing of the resin tends not to proceed sufficiently. On the other hand, if the heating time exceeds one hour, the throughput will be reduced, and it will be difficult to keep the heat input sufficiently low.
• the optimal conditions in the pre-curing step for example, the force S depending on the thickness of the applied film and the required physical properties of the silica-based film, are 150 ° C / 1 minute + Multi-stage heating at 250 ° C./1 min.
• the film from which the solvent has been removed and which has been pre-cured is fired at a temperature of, for example, 350 to 500 ° C. (second heating temperature T 2 ) to perform final curing (final curing step).
• a temperature of, for example, 350 to 500 ° C. (second heating temperature T 2 ) to perform final curing (final curing step).
• T 2 second heating temperature
• it may be 350 ° C. or lower, for example, about 300 ° C., but if it is lower than 300 ° C., sufficient curing tends to be difficult to achieve.
• the heating temperature is lower than 350 ° C., the decomposition and volatilization of the component (d) may not be sufficiently promoted.
• the heating temperature exceeds 500 ° C.
• the amount of heat input increases, and there is a possibility that the wiring metal is deteriorated.
• the temperature be 400 ° C or less, and that the temperature be 3375 ° C or less. More preferably, about 350 ° C Is more preferred.
• the final curing is preferably performed in an inert atmosphere of N 2 , Ar, He, or the like. In this case, the oxygen concentration is preferably 1000 ppm or less.
• the heating time at this time is preferably from 2 to 60 minutes, more preferably from 2 to 30 minutes. If the heating time exceeds 60 minutes, the amount of heat input may increase excessively and cause deterioration of wiring metal.
• a heating device such as a quartz tube furnace or another furnace, a hot plate, or rapid thermal annealing (RTA).
• the thickness of the silica-based coating thus formed is preferably from 0.01 to 40 ⁇ m, more preferably from 0.1 / im to 2.0 m. If the film thickness exceeds 4 ⁇ , cracks are likely to occur due to stress.On the other hand, if the film thickness is less than 0.1 ⁇ , a metal wiring layer exists above and below the silica-based coating. Has a tendency to deteriorate.
• the elastic modulus is preferably 2.5 GPa or more, more preferably 3.0 GPa or more, and still more preferably 3.5 GPa or more. Particularly preferably, it is possible to obtain a silica-based coating having a high heat resistance of 4. OGPa or more. If the elastic modulus is less than 2.5 GPa, for example, when a silica-based film is used as a semiconductor insulating film, inconvenience such as difficulty in processing may be caused.
• a large number of pores having an average pore diameter of preferably 4.0 nm or less, more preferably 3.0 nm or less, and particularly preferably 2.2 nm or less are formed. It is a thing. If the average pore diameter exceeds 4. O nm, the CMP resistance may be insufficient depending on the film thickness and the like. On the other hand, when the average pore diameter is extremely small (for example, 0.1 nm or less), it is difficult to form pores and it may be difficult to achieve the required low dielectric constant.
• the maximum frequency pore diameter is preferably 2.O nm or less, more preferably 1.5 nm or less. This highest frequency pore size exceeds 2.O nm Depending on the film thickness, it tends to be difficult to achieve sufficient mechanical strength.
• substantially no pores having a diameter of 10 nm or more exist in the silica-based coating (the maximum value of the pore diameter is less than 10 nm). average
• composition for forming a silica-based film according to the present invention may contain, as essential components, component (a), component (b), and component (e) shown below.
• component (a), component (b), and component (e) shown below the composition for forming a silica-based film will be described.
• the component (b) in the present embodiment is a solvent capable of dissolving the component (a), that is, the above-mentioned siloxane resin, and in particular, a first solvent component comprising an alkylene glycol alkyl ether alkyl ester or an alkylene glycol alkyl ether acetate. It is desirable that the solvent contains a second solvent component consisting of alkylenedalicol monoalkyl ether as an essential component.
• the mass content ratio of the first solvent component to the second solvent is preferably 1:99 to 60:40, more preferably 5; 95 to 50:50, and still more preferably 1: 1. 0: 90 to 40: 60. If this mass content ratio is less than 1:99 (that is, the mass ratio of the first solvent / the second solvent is less than 1/99), the mechanical strength of the finally obtained silicic coating is reduced. Deterioration tends to be significant. On the other hand, when the mass content ratio exceeds 60:40 (that is, the mass ratio of the first solvent and the second solvent exceeds 60 Z40), the film thickness uniformity of the silica-based film is increased. Such physical properties tend to be remarkable.
• the first solvent component for example, ethylene glycol alcohol methyl ether propionate, ethylene glycol oleinoethyl enoate propionate, acetate glycol ethylene glycol oleno methyl acetate oleate acetate, ethylene glycol oleno ethyl enoate acetate, diethylene glycol methylol Norre ether Honoré acetate, diethylene glyceryl Kono les ethyl Honoré ether Roh rare cetearyl over preparative, Jefferies Chile ring Ricoh Honoré one n - butyl Honoré ether Honoré acetate, propylene glycol Honoré ethyl Honoré ether Honoré acetate, propylene glycol Kono repromicin Pinot les ether Roh Rare cetearyl over , Dipropylene glycol remethinoleate enorea acetate, dipropylene dalicol ethyl ether acetate, and the like
• alkylene glycol methinoyl ether acetate or propylene glycol / rearalkyl ether acetate is preferred, and propylene daricol methyl is more preferred.
• Ether acetate is particularly preferred.
• the second solvent component includes, for example, ethylene glycol monomethyl ether, ethylene glycol monomethyl monoethylene ether, ethylene glycol monomethyl monoethylene glycol, ethylene glycol monomethyl monoethylene ether, ethylene glycol monomethyl monoethylene ether Glyco-monoethylene 2-ethynolebutynoleatene, propylene glycolone monomethineoleate, propyleneglyconele monoethylenatele, propylene glycolone monopropylateneole, diethylene glycol monoethylateneole, diethylene glycol monoetone I-n-butylinoleatene, diethyleneglycol / le-mono-n-hexinoleatene, zip-opened pyrenic-reno-monomethinoleatenole, zip-opened pyrenic-reno-monoethyl ether, etc.
• the solvent as the component (b) may contain other solvent components as necessary.
• examples of such other solvent components include various solvents that can be used as component (b) described above. They can be used alone or in combination of two or more with the first solvent and the second solvent.
• the amount of component (b) used is preferably such that the amount of component (a) (siloxane resin) is 3 to 25% by mass, as described above.
• the amount of the solvent is too small and the concentration of the component (a) exceeds 25% by mass, the formation of a silica-based film ⁇ fe and the like tend to deteriorate, and the stability of the composition itself tends to decrease.
• the amount of the solvent is excessive and the concentration of the component (a) is less than 3% by mass, it tends to be difficult to form a silica-based coating having a desired film thickness.
• the component (e) has a side chain containing a hydroxyl group, and the concentration M OH (mo 1 / g) of the hydroxyl group in the side chain is represented by the following formula (9);
• the concentration M OH of this hydroxyl group is 0 (zero) mol // g, that is, when the hydroxyl group is not contained in the side chain, when the solvent is removed from the composition by volatilization or the like, There is a possibility that the siloxane resin component (a) and the polymer may undergo phase separation. In this case, the pore size of the silica-based coating finally obtained becomes excessively large, and the size distribution tends to widen, resulting in poor uniformity of the fine pores, which may cause a decrease in mechanical strength. There is. On the other hand, if the concentration M OH of the hydroxyl groups is more than 0. 4X 10 one 2 mo lZg, polymer is not easily decompose or volatilize upon heating, inconvenience such it takes a high temperature or long time heat treatment.
• the concentration M OH (mol / g) of the hydroxyl group can be obtained from the charged amount of the polymer.
• Ma indicates the molar ratio of the minimum repeating unit containing a hydroxyl group
• Mb indicates the molecular weight of the hydroxyl group (OH group)
• Mh indicates the average molecular weight of the polymer.
• (e) is the component polymer is preferably a temperature 3 0 0 ⁇ 5 0 0 °
• Contact Keru reduction rate in a nitrogen gas atmosphere C is 9 5 mass% or more, more preferably 9 7% And more preferably 99% by mass or more. If this reduction rate is less than 95% by mass, the decomposition or volatilization of the polymer when heating the composition tends to be insufficient, and the polymer in the finally obtained silica-based coating film tends to be insufficient.
• the electrical characteristics of the silica-based coating may deteriorate, such as an increase in the relative dielectric constant.
• the “decrease rate” of the polymer as the component (e) in the present invention is a value determined by the following apparatus and conditions.
• Atmosphere Nitrogen (N 2 ) gas 20 O ml / min
• Sample container open sample pan ⁇ 5 aluminum (manufactured by Seiko Instruments Inc.)
• the reference mass of the polymer as the component (e) before the decomposition starts is the mass at 150 ° C. during the temperature rise. This is because the decrease in mass below 150 ° C is due to the removal of adsorbed water and the like, and it is presumed that the decomposition of the polymer itself as the component (e) does not substantially occur. by.
• the solution containing the polymer For example, about 2 g is placed in a metal Petri dish, and dried at 150 ° C. for 3 hours in air at normal pressure, and a residue is used as a sample.
• the polymer as the component (e) is compatible with the siloxane resin as the component (a).
• the mass average molecular weight measured by GPC and converted using a calibration curve of standard polystyrene is preferably 500 to 100,000, and 1,000 to 100,000. More preferably, it is 50,000. If the mass average molecular weight is less than 500, the film-forming properties of the silica-based coating tend to be poor. On the other hand, if the mass average molecular weight exceeds 100,000, the compatibility with the siloxane resin tends to decrease.
• Such a compound having a hydroxyl group (monomer component) that constitutes the polymer of the component (e) include acrinoleic acid, 2-hydroxyethyl acrylate, diethylene glycol enolate tallate, Hydroxypropinole tallate, dipropylene glycol atarilate, metatarinoleic acid, 2-hydroxyhexenolate methacrylate, diethylene glycolonomethacrylate, 2-hydroxypropinole methacrylate, dipropylene glycol (Meth) acrylic acid derivatives such as methacrylate, butyl alcohol, aryl alcohol and the like.
• the polymer of the component (e) may contain a compound having no hydroxyl group as a component for the purpose of adjusting the concentration M OH of the hydroxyl group in the side chain.
• a compound having no hydroxyl group include a butyl ether compound, a vinyl compound having a polyethylene oxide structure, a butyl compound having a polypropylene oxide structure, a vinyl pyridine compound, and a styrene compound. , Alkyl ester butyl compounds, (meth) acrylate compounds, and the like.
• (Meth) acrylate acid derivatives include acrylates such as alkyl acrylates, alkyl methacrylates, alkoxyalkyl acrylates, alkyl methacrylates, and alkoxyalkyl methacrylates. Acid esters or methacrylic acid esters are included.
• alkyl acrylates include carbon atoms such as methyl acrylate, ethyl acrylate, n-propyl acrylate, isopropyl acrylate, n-butyl acrylate, isobutyl acrylate, pentyl acrylate, and hexyl acrylate.
• alkyl ester of 1 to 6 examples include methacrylic acid alkyl esters, such as methinole methacrylate, ethyl methacrylate, n-propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, isoptyl methacrylate, pentyl methacrylate, Carbon number of hexyl methacrylate etc .; To 6 alkyl esters.
• examples of the alkoxyalkyl acrylate include methoxymethyl acrylate and ethoxyxyl methacrylate
• examples of the alkoxyalkyl methacrylate include methoxymethyl methacrylate and ethoxyl methacrylate.
• composition for forming a silica-based film of the [second embodiment] (containing the (a) component, (b) component and (e) component as essential components) is also the [first embodiment]
• the metal ion concentration in the composition is preferably 100 ppb or less, and 20 ppb or less. It is more preferable that it is the following.
• the concentration of these metal ions exceeds 100 ppb, the metal ions may easily flow into a semiconductor element having a silicic coating obtained from the composition, which may adversely affect the device performance itself. Therefore, it is effective to remove an alkali metal or an alkaline earth metal from the composition by using an ion exchange filter or the like as necessary.
• composition for forming a silica-based coating film of the present embodiment is also applied to a substrate such as a wafer as described later, and then cured by heating and firing, as in the first embodiment.
• a silica-based film (Low-k film) exhibiting a low dielectric constant is formed.
• the solvent containing the above-mentioned first solvent component and second solvent component is used as the solvent of the component (b)
• the mechanical strength of the silica-based coating is sufficiently increased and the uniformity of the film thickness is improved. Can be done.
• the hydroxyl group is contained in the side chain of the polymer as the essential component (e), so that when the solvent of the component (b) is removed by volatilization or the like, the siloxane resin of the component (a) is removed. And the polymer are prevented from being separated, and the pores formed inside the film can be made finer and the shape can be made uniform. Therefore, it is possible to further suppress the decrease in mechanical strength of the silica-based coating finally obtained.
• the onium salt which is the component (c)
• the mechanical strength and electrical reliability of the silica-based coating can be improved. Therefore, in the CMP step, it is possible to prevent peeling from occurring at the interface between the silica-based film and another layer (film).
• the concentration of the hydroxyl group in the side chain of the polymer as the component (e) is not more than the upper limit described above, the decomposition of the component (e) at the time of heating is suppressed and the volatilization is promoted. You. Therefore, the composition can be cured at a lower temperature or a shorter time than before, without setting the temperature to an excessively high temperature. As a result, the amount of heat input to the substrate can be significantly reduced, and the deterioration of other films (layers), and thus device characteristics, can be suppressed. In addition, throughput can be improved by shortening the process time.
• a method for forming a silica-based film on a substrate by using such a silica-based film-forming composition of the present invention will be described by taking a spin coating method as an example in the same manner as described above.
• a silica-based film forming composition is spin-coated on a substrate such as a silicon wafer at preferably 500 to 5000 revolutions / minute, more preferably 1000 to 3000 revolutions / minute to form a film.
• a substrate such as a silicon wafer
• the solvent in the coating is dried on a hot plate or the like at preferably 50 to 350 ° C, more preferably 100 to 250 ° C. If the drying temperature is lower than 50 ° C, the solvent tends to be insufficiently dried.
• the drying temperature exceeds 350 ° C
• the polymer for forming the porous body (component (e)) is thermally decomposed before the siloxane skeleton is formed in the coating, and the volatilization amount increases to an inconvenient level. This may make it difficult to obtain a silica-based coating having desired mechanical strength and low dielectric properties.
• the film from which the solvent has been removed is fired at a heating temperature of 250 to 500 ° C to perform final hardening.
• the final curing is preferably performed in an inert atmosphere of N 2 , Ar, He, etc.
• the oxygen concentration is preferably 1000 ppm or less. If the heating temperature is lower than 250 ° C, sufficient curing tends not to be achieved, and (e) the decomposition and volatilization of the components tend not to be sufficiently promoted. On the other hand, when the heating temperature exceeds 500 ° C., when there is a metal wiring layer, the amount of heat input increases, and there is a possibility that the wiring metal may deteriorate.
• the heating time at this time is preferably 2 to 60 minutes, more preferably 2 to 30 minutes, as in the final curing step described above. If the heating time exceeds 60 minutes, the heat input may increase excessively and cause deterioration of the wiring metal.
• a heat treatment apparatus such as thermal annealing (RTA).
• the thickness of the silica-based coating thus formed is preferably 0.01 to 40 ⁇ , more preferably 0.1 ⁇ to 2. ⁇ ⁇ , as described above. . If the film thickness exceeds 40 ⁇ , cracks are likely to occur due to stress, while if it is less than 0.01 m, the leakage between the upper and lower wiring when metal wiring layers exist above and below the silica coating. Characteristics tend to deteriorate.
• Examples of the electronic component having a silica-based coating formed using the composition for forming a silica-based coating of the present invention include a device having an insulating film such as a semiconductor element and a multilayer wiring board.
• an insulating film such as a semiconductor element
• a multilayer wiring board it can be used as a surface protective film (passivation film), a buffer coat film, an interlayer insulating film, and the like.
• a multilayer wiring board it can be suitably used as an interlayer insulating film.
• semiconductor elements include discrete semiconductors such as diodes, transistors, compound semiconductors, thermistors, varistors, and thyristors, DRAMs (dynamic random access memories), and SRAMs (static random access memories).
• Memory EPROM (erasable / programmable read / only memory), mask R ⁇ M (mask / read only memory), EEPROM (electrically erasable / programmable read only memory) ),
• Storage elements such as flash memory, theoretical circuit elements such as microprocessors, DSPs, and AS ICs; integrated circuit elements such as compound semiconductors represented by MMIC (monolithic 'microwave integrated circuits); hybrid integrated circuits (hybrid IC), light emitting diode, charge-coupled device And the like of the photoelectric conversion element.
• Examples of the multilayer wiring board include high-density wiring boards such as MCM.
• silica-based coating of the present invention that exhibits a low dielectric constant, such an electronic component can achieve high performance such as reduction in signal propagation delay time and can achieve high reliability.
• the pyrolytic volatile compound as the component (d) was synthesized by the following procedure. First, 300 g of propylene glycol monomethyl atenorea acetate (PGMEA) was charged into a 100-OmI flask, and 100 g of methyl methacrylate in which 2.0 g of azobisisobutyronitrile (AIBN) was dissolved was added to a 20-Om1 dropping funnel. After the system was replaced with nitrogen gas, the solution in the dropping funnel was dropped into the flask over 2 hours while heating and stirring in a 130 ° C. oil bath under a nitrogen gas atmosphere. Then, after stirring for 30 minutes, 97.8 g of PGMEA in which 2 g of AIBNO.
• PGMEA propylene glycol monomethyl atenorea acetate
• the weight average molecular weight measured by the GPC method was 12,800. Further, 2 g of the solution was weighed into a metal Petri dish, and dried in a dryer at 150 ° C for 3 hours, to obtain a concentration of the pyrolytic volatile compound of 18.5% by mass.
• the pyrolytic volatile compound as the component (d) was synthesized by the following procedure. First, 300 g of PGMEA was charged into a 1 000 ml flask, and 95 g of methyl methacrylate in which 2.0 g of AIBN was dissolved and 5 g of 2-hydroxyethyl methacrylate were placed in a 200 ml dropping funnel. After the inside was replaced with nitrogen gas, the solution in the dropping funnel was dropped into the flask over 2 hours while heating and stirring in a 130 ° C oil bath under a nitrogen gas atmosphere.
• the weight average molecular weight measured by the GPC method was 10,700. Further, 2 g of the solution was weighed into a metal Petri dish and dried in a dryer at 150 ° C. for 3 hours, and the concentration of the pyrolytic volatile compound determined was 16.8% by mass. ⁇ Example 11-2>
• Example 11 The composition for forming a silicic acid-based film obtained in Examples 1 and 1 and 1-2 and Comparative Example 11 was spin-coated on a plurality of Si wafers at a rotation speed of 125 rm / 30 seconds, respectively. To form a coating. After spin coating, each Si wafer was subjected to a heat treatment at 150 ° C. for 3 minutes to remove the solvent in the coating to form a silica coating.
• the film thickness of this film was measured by an ellipsometer (manufactured by Gartner; ellipsometer L116B, working wavelength: 633 nm). Specifically, He-Ne laser light was irradiated onto the interlayer insulating film, and the film thickness determined from the phase difference caused by irradiation at the specified wavelength was measured. Next, the amount of 'warpage' of the Si wafer was measured in accordance with the method and procedure described in the above “Stress evaluation method”.
• the Si wafer whose film thickness and amount of warpage were measured was subjected to a heat treatment at 400 ° C./30 minutes in a quartz tube furnace in which the o 2 concentration was controlled at around 100 ppm.
• the silica-based coating was finally cured.
• the film thickness and the amount of “warpage” of this film were measured in the same manner as described above.
• ⁇ Relative permittivity measurement 1> The relative permittivity of the silica-based coating formed in ⁇ Stress evaluation 1> was measured in accordance with the above-mentioned [Method of measuring relative permittivity]. The results are shown in Table 11-11.
• the elastic modulus of the silica-based coating formed in ⁇ Stress evaluation 1> was measured in accordance with the above-mentioned [Method of measuring elastic modulus]. The results are shown in Table 11-11.
• Example 12 An X-ray diffractometer ATX—manufactured by Rigaku Denki Kogyo Co., Ltd. was used as a measuring device for the silica-based coating formed in 1-2 and the silica-based coating formed using the conventional composition (conventional product). Using G, the pore distribution of each film was measured by analyzing the X-ray diffuse scattering data.
• FIG. 1 is a graph showing the obtained pore distribution (normalized by the pore diameter), and the curves L 1 and L 2 in the figure correspond to those of Example 1-2 and the silica coating of the conventional product, respectively. 9 shows the frequency distribution obtained by smoothing.
• Tables 12 and 12 show the results of the average pore diameter and the maximum frequency pore diameter obtained from these pore distributions.
• ⁇ Synthesis example 2-1 The pyrolytic volatile compound as the component (d) was synthesized by the following procedure. First, 300 g of propylene glycol monomethyl ether acetate (PGMEA) was charged into a 1 000 ml flask, and 2.0 g of azobisisobutyl mouth-tolyl (AIBN) dissolved in a 20 Om1 dropping funnel was methyl methacrylate. After charging 95 g and 5 g of 2-hydroxyethyl methacrylate and replacing the inside of the system with nitrogen gas, the solution in the dropping funnel was heated and stirred in a 130 ° C oil bath under a nitrogen gas atmosphere. The solution was dropped into the flask over 2 hours.
• PGMEA propylene glycol monomethyl ether acetate
• AIBN azobisisobutyl mouth-tolyl
• the weight average molecular weight measured by the GPC method was 10,700. Further, 2 g of the solution was weighed into a metal dish and dried in a dryer at 150 ° C for 3 hours, and the concentration of the pyrolytic volatile 1 "raw compound was 16.8% by mass.
• the composition for forming a silica-based film obtained in Example 1 was spin-coated on a plurality of Si wafers at a rotation speed of 1390 rpm / 30 seconds to form a film. After spin coating, each Si wafer is subjected to a heat treatment (preliminary curing step at the first heating temperature) of 150 ° CZl + 250 ° C for 1 minute to remove the solvent in the coating. To form a silica-based coating. Then, the film thickness of this film was measured by an ellipsometer (manufactured by Gartner; ellipsometer L116B, wavelength used: 633 nm).
• the Si wafer whose film thickness and amount of warpage were measured was heat-treated at 400 ° C./30 minutes in a quartz tube furnace in which the o 2 concentration was controlled at around 100 ppm, The silica-based coating was finally cured (final curing step at the second heating temperature).
• the film thickness, the amount of warpage, and the amount of warpage were measured for this film in the same manner as described above.
• the relative dielectric constant of the silica-based coating formed in ⁇ Stress evaluation 2> was measured according to the above-mentioned [Method of measuring relative dielectric constant]. The results are shown in Table 2-1.
• the pyrolytic volatile compound as the component (d) was synthesized by the following procedure. First, 300 g of PGMEA was charged into a 1 000 ml flask, 95 g of methyl methacrylate in which 2.0 g of AIBN was dissolved and 5 g of 2-hydroxyethyl methacrylate were charged into a 200 ml dropping funnel, and nitrogen was introduced into the system. After the gas was replaced, the solution in the dropping funnel was dropped into the flask over 2 hours while heating and stirring in a 130 ° C oil bath under a nitrogen gas atmosphere.
• the composition for forming a silicic acid-based film obtained in Example 3-1 and Comparative Example 3-1 was spin-coated on a plurality of Si wafers at a rotation speed of 1500 rpm / 30 seconds to form a film. .
• each Si wafer was subjected to a heat treatment of 150 ° C / 1 minute + 250 ° CZl to remove the solvent in the film to form a silica-based film.
• ⁇ 2 concentration was controlled around 1 00 p pm, treated 400 ° C / 30 min heat and final curing the silica-based film as an interlayer insulating film.
• each interlayer insulating film was measured with an ellipsometer (manufactured by Gartner; ellipsometer L116B, wavelength used: 633 n.m). Specifically, He-Ne laser light was irradiated onto the interlayer insulating film, and the film thickness determined from the phase difference caused by irradiation at the specified wavelength was measured.
• CMP polishing was performed on each interlayer insulating film under conditions that would not polish the interlayer insulating film. Specifically, an Si wafer was cut into a 2 cm square, and HS-C430 manufactured by Hitachi Chemical Co., Ltd. was used as a slurry and polished at an additional load of 400 gf / cm 2 for 1 minute to leave the insulating film. was examined.
• the polymer as the component (e) was synthesized by the following procedure. First, 300 g of propylene dalicol monomethyl ether acetate (PGMEA) was charged into a 1000 ml flask, and methacrylic acid in which 2.0 g of azobisisobutyronitrile (AIBN) was dissolved in a dropping funnel of 20 Om1. 95 g of methyl acrylate and 5 g of 2-hydroxyl methacrylate were charged, and the system was replaced with nitrogen gas. In a nitrogen gas atmosphere, the mixture was heated and stirred in an oil bath at 130 ° C. Was dropped into the flask over 2 hours.
• PMEA propylene dalicol monomethyl ether acetate
• AIBN azobisisobutyronitrile
• human Doroki sill group concentration M OH calculations side chain using the preceding equation (10) was 0. 038 X 10- 2 mo 1 / g.
• the weight average molecular weight measured by the GPC method was 9,950.
• 2 g of the polymer solution was weighed into a metal Petri dish, and dried in a dryer at 150 ° C. for 3 hours, to obtain a polymer concentration of 16.7% by mass. Further, the mass loss at 500 ° C. measured using the obtained dried polymer was 99%.
• Example 4-1 In a solution of 132.3 g of tetraethoxysilane and 65.lg of methyltriethoxysilane dissolved in 335.94 g of propylene glycol monopropyl ether (PGP), 0.92 g of 70% nitric acid was added. 65.8 g of the dissolved water was added dropwise over 30 minutes while stirring. After completion of the dropwise addition, the mixture was reacted for 5 hours to obtain a polysiloxane solution.
• PGP propylene glycol monopropyl ether
• the polymer as the component (e) was synthesized by the following procedure. First, 300 g of PGP was charged into a 1000 ml flask, and 45 g of methyl methacrylate in which 1.7 g of AIBN was dissolved and 55 g of 2-hydroxyethyl methacrylate were charged into a 20 Om 1 dropping funnel. After replacing the inside of the system with nitrogen gas, the solution in the dropping funnel was dropped into the flask over 2 hours while heating and stirring in a 130 ° C oil bath under a nitrogen gas atmosphere.
• the hydroxyl group concentration M OH of the side chain calculated using the above equation (10) was 0.48 mol / g.
• the weight average molecular weight measured by the GPC method was 10,700.
• 2 g of the polymer solution was weighed into a metal Petri dish and dried in a dryer at 150 ° C. for 3 hours to obtain a polymer concentration of 15.0 mass. / 0 .
• the mass loss at 500 ° C. measured using the obtained dried polymer was 95%.
• Example 41 Each of the compositions for forming a silicon-based coating film obtained in Example 11 and Comparative Example 4-11 was spin-coated on a silicon wafer at a rotation speed of 1500 rpm / 30 seconds to form a film. After spin coating, 1 5 0 ° C / 1 min + 2 5 0 ° CZ 1 minute over after removal of the solvent in the coating, O 2 concentration of 4 in a quartz tube furnace was controlled around 1 0 0 ppm 0 The film was finally cured at 0 ° C./30 minutes to produce a silica-based film as an interlayer insulating film. ⁇ Evaluation of interlayer insulating film 2>
• the thickness, electrical characteristics, and film strength of each of the obtained interlayer insulating films were evaluated by the following methods.
• each interlayer insulating film was measured in the same manner as in ⁇ Evaluation 1 of interlayer insulating film>.
• the composition has excellent low dielectric properties, has sufficient mechanical strength, and has a uniform film thickness.
• the adhesion to other films (layers) and improving the CMP resistance it is possible to obtain a silicic coating capable of preventing interfacial peeling.
• the curing proceeds in a lower temperature region than in the past, the amount of heat input to the substrate on which the silicic coating is formed can be reduced. Therefore, it is possible to prevent the functions of the lower layer wiring and the like from being impaired.
• the electronic component according to the present invention has such a silica-based coating, the electrical reliability of the entire device can be improved, and the yield of product production and the process tolerance can be improved.
• C capable of providing a high density and electronic components having excellent reliability in high definition

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