WO2002061816A1 - Procede de fabrication de film semiconducteur mince, procede de fabrication de dispositif a semi-conducteur, systeme d'execution de ces procedes et dispositif electro-optique - Google Patents

Procede de fabrication de film semiconducteur mince, procede de fabrication de dispositif a semi-conducteur, systeme d'execution de ces procedes et dispositif electro-optique Download PDF

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Publication number
WO2002061816A1
WO2002061816A1 PCT/JP2002/000799 JP0200799W WO02061816A1 WO 2002061816 A1 WO2002061816 A1 WO 2002061816A1 JP 0200799 W JP0200799 W JP 0200799W WO 02061816 A1 WO02061816 A1 WO 02061816A1
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WIPO (PCT)
Prior art keywords
thin film
semiconductor thin
polycrystalline
executing
single crystal
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Ceased
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PCT/JP2002/000799
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English (en)
French (fr)
Japanese (ja)
Inventor
Hideo Yamanaka
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Publication of WO2002061816A1 publication Critical patent/WO2002061816A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laser Beam Processing (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
PCT/JP2002/000799 2001-02-01 2002-01-31 Procede de fabrication de film semiconducteur mince, procede de fabrication de dispositif a semi-conducteur, systeme d'execution de ces procedes et dispositif electro-optique Ceased WO2002061816A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001024999A JP2002231628A (ja) 2001-02-01 2001-02-01 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
JP2001-24999 2001-02-01

Publications (1)

Publication Number Publication Date
WO2002061816A1 true WO2002061816A1 (fr) 2002-08-08

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ID=18890060

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Application Number Title Priority Date Filing Date
PCT/JP2002/000799 Ceased WO2002061816A1 (fr) 2001-02-01 2002-01-31 Procede de fabrication de film semiconducteur mince, procede de fabrication de dispositif a semi-conducteur, systeme d'execution de ces procedes et dispositif electro-optique

Country Status (4)

Country Link
US (1) US20030148565A1 (enExample)
JP (1) JP2002231628A (enExample)
TW (1) TW552707B (enExample)
WO (1) WO2002061816A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1468774A1 (en) * 2003-02-28 2004-10-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
CN100444333C (zh) * 2002-10-07 2008-12-17 株式会社半导体能源研究所 照射激光的方法、激光照射系统和半导体器件的制造方法
US9466402B2 (en) 2003-09-16 2016-10-11 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
CN110133850A (zh) * 2018-02-02 2019-08-16 林清富 抬头显示器、发光薄膜与其制法

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
US7115503B2 (en) 2000-10-10 2006-10-03 The Trustees Of Columbia University In The City Of New York Method and apparatus for processing thin metal layers
US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US7135389B2 (en) * 2001-12-20 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Irradiation method of laser beam
CN100459041C (zh) 2002-08-19 2009-02-04 纽约市哥伦比亚大学托管会 激光结晶处理薄膜样品以最小化边缘区域的方法和系统
US7718517B2 (en) 2002-08-19 2010-05-18 Im James S Single-shot semiconductor processing system and method having various irradiation patterns
US20040084679A1 (en) * 2002-10-30 2004-05-06 Sharp Kabushiki Kaisha Semiconductor devices and methods of manufacture thereof
JP4429586B2 (ja) * 2002-11-08 2010-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7160762B2 (en) * 2002-11-08 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
US7056810B2 (en) * 2002-12-18 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7972663B2 (en) * 2002-12-20 2011-07-05 Applied Materials, Inc. Method and apparatus for forming a high quality low temperature silicon nitride layer
US7172792B2 (en) * 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
US7341928B2 (en) 2003-02-19 2008-03-11 The Trustees Of Columbia University In The City Of New York System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques
US7063984B2 (en) * 2003-03-13 2006-06-20 Unity Semiconductor Corporation Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
US6838396B2 (en) * 2003-03-28 2005-01-04 International Business Machines Corporation Bilayer ultra-thin gate dielectric and process for semiconductor metal contamination reduction
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4515136B2 (ja) * 2003-04-21 2010-07-28 株式会社半導体エネルギー研究所 レーザビーム照射装置、薄膜トランジスタの作製方法
US7397592B2 (en) 2003-04-21 2008-07-08 Semiconductor Energy Laboratory Co., Ltd. Beam irradiation apparatus, beam irradiation method, and method for manufacturing a thin film transistor
US7208395B2 (en) * 2003-06-26 2007-04-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
TWI351713B (en) 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
JPWO2005031781A1 (ja) * 2003-09-30 2006-12-07 住友電気工業株式会社 ダイヤモンド電子放出素子の製造方法ならびに電子放出素子
KR100558284B1 (ko) * 2003-12-24 2006-03-10 한국전자통신연구원 폴리실리콘층의 결정화/활성화 방법 및 이를 이용한폴리실리콘 박막트랜지스터 제조방법
US20050238816A1 (en) * 2004-04-23 2005-10-27 Li Hou Method and apparatus of depositing low temperature inorganic films on plastic substrates
JP4631044B2 (ja) * 2004-05-26 2011-02-16 国立大学法人北海道大学 レーザ加工方法および装置
KR101090252B1 (ko) * 2004-09-24 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
US7202124B2 (en) * 2004-10-01 2007-04-10 Massachusetts Institute Of Technology Strained gettering layers for semiconductor processes
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
TWI311213B (en) * 2004-12-24 2009-06-21 Au Optronics Corp Crystallizing method for forming poly-si films and thin film transistors using same
JP2006261611A (ja) * 2005-03-18 2006-09-28 Fuji Photo Film Co Ltd 有機エレクトロルミネッセント素子及び表示装置
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
KR100697693B1 (ko) * 2005-06-24 2007-03-20 삼성전자주식회사 피모스 트랜지스터와 그 제조 방법 및 이를 갖는 스택형반도체 장치 및 그 제조 방법
TWI424408B (zh) 2005-08-12 2014-01-21 半導體能源研究所股份有限公司 半導體裝置，和安裝有該半導體裝置的顯示裝置和電子裝置
EP1777690B1 (en) * 2005-10-18 2012-08-01 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101287314B1 (ko) 2005-12-05 2013-07-17 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 막 처리 시스템과 방법, 및 박막
WO2007069516A1 (en) * 2005-12-16 2007-06-21 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device
KR101315282B1 (ko) * 2006-04-27 2013-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 사용한 전자기기
US7848835B2 (en) * 2006-06-02 2010-12-07 Cymer, Inc. High power laser flat panel workpiece treatment system controller
JP2008041716A (ja) * 2006-08-01 2008-02-21 Ulvac Japan Ltd 磁気抵抗素子、磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置
JP5307992B2 (ja) * 2007-07-27 2013-10-02 株式会社半導体エネルギー研究所 表示装置の生産方法
US8441018B2 (en) * 2007-08-16 2013-05-14 The Trustees Of Columbia University In The City Of New York Direct bandgap substrates and methods of making and using
WO2009039482A1 (en) 2007-09-21 2009-03-26 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
TWI377620B (en) * 2007-09-26 2012-11-21 Chunghwa Picture Tubes Ltd Fabricating method for a polysilicon layer
WO2009057669A1 (en) * 2007-11-01 2009-05-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
US8011207B2 (en) * 2007-11-20 2011-09-06 Corning Incorporated Laser scoring of glass sheets at high speeds and with low residual stress
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
CN101919058B (zh) 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
JP5286046B2 (ja) * 2007-11-30 2013-09-11 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US8569155B2 (en) 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
JP5460975B2 (ja) * 2008-05-23 2014-04-02 株式会社デンソー 半導体装置の製造方法
US7943414B2 (en) * 2008-08-01 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
US8051679B2 (en) * 2008-09-29 2011-11-08 Corning Incorporated Laser separation of glass sheets
JP2012508985A (ja) 2008-11-14 2012-04-12 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 薄膜の結晶化のためのシステムおよび方法
US20110312103A1 (en) * 2009-01-30 2011-12-22 National Institute Of Advanced Industrial Science And Technology Sample detection sensor and sample detection method
KR101393611B1 (ko) * 2009-06-02 2014-05-12 가부시키가이샤 사무코 반도체 디바이스용 반도체 기판의 제조방법, 반도체 디바이스용 반도체 기판의 제조장치, 반도체 디바이스의 제조방법 및 반도체 디바이스의 제조장치
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
WO2011095560A2 (de) * 2010-02-03 2011-08-11 Limo Patentverwaltung Gmbh & Co. Kg Verfahren und vorrichtung zur wärmebehandlung des scheibenförmigen grundmaterials einer solarzelle, insbesondere einer kristallinen oder polykristallinen silizium-solarzelle
US9250178B2 (en) * 2011-10-07 2016-02-02 Kla-Tencor Corporation Passivation of nonlinear optical crystals
JP2013149937A (ja) * 2011-12-22 2013-08-01 Panasonic Corp 多結晶型シリコン太陽電池パネルおよびその製造方法
US9214393B2 (en) * 2012-04-02 2015-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Surface tension modification using silane with hydrophobic functional group for thin film deposition
CN103227090B (zh) * 2013-02-04 2016-04-06 深圳市劲拓自动化设备股份有限公司 一种线性等离子体源
CN103165422A (zh) * 2013-03-08 2013-06-19 上海和辉光电有限公司 以高能辐射源形成多晶硅的方法
US20140272198A1 (en) * 2013-03-15 2014-09-18 Stuart Bowden Systems, methods, and media for creating metallization for solar cells
US20140329027A1 (en) * 2013-05-02 2014-11-06 Applied Materials, Inc. Low temperature flowable curing for stress accommodation
CN104037269A (zh) * 2014-06-10 2014-09-10 上海大学 一种基于激光诱导晶化的非晶硅薄膜太阳能电池器件的制备方法
DE112014005277T5 (de) * 2014-06-12 2016-10-06 Fuji Electric Co., Ltd. Vorrichtung zum Einbringen von Verunreinigungen, Verfahren zum Einbringen von Verunreinigungen und Verfahren zur Herstellung eines Halbleiterelements
JP6393632B2 (ja) * 2015-02-19 2018-09-19 東京エレクトロン株式会社 Ｉｖ族半導体の結晶化方法および成膜装置
KR101818721B1 (ko) * 2015-03-27 2018-02-21 에이피시스템 주식회사 반도체 소자 제조 장치 및 이를 이용한 반도체 소자 제조 방법
US9773921B2 (en) * 2015-10-30 2017-09-26 Applied Materials, Inc. Combo amorphous and LTPS transistors
JP6643353B2 (ja) * 2015-11-12 2020-02-12 京セラ株式会社 ヒータ
DE102017109812A1 (de) 2016-05-13 2017-11-16 Osram Opto Semiconductors Gmbh Licht emittierender Halbleiterchip und Verfahren zur Herstellung eines Licht emittierenden Halbleiterchips
DE102017108949B4 (de) 2016-05-13 2021-08-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
DE102017109809B4 (de) 2016-05-13 2024-01-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiterchips
US11154903B2 (en) * 2016-05-13 2021-10-26 Jiangsu Favored Nanotechnology Co., Ltd. Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization
US11004954B2 (en) * 2016-09-30 2021-05-11 Intel Corporation Epitaxial buffer to reduce sub-channel leakage in MOS transistors
CN108269732B (zh) * 2017-01-03 2020-08-11 联华电子股份有限公司 形成非晶硅多层结构的方法
CN107393830A (zh) * 2017-07-21 2017-11-24 京东方科技集团股份有限公司 薄膜晶体管的制备方法
KR20190035036A (ko) * 2017-09-25 2019-04-03 삼성전자주식회사 박막 형성 장치 및 이를 이용한 비정질 실리콘 막 형성방법
JP2019176076A (ja) * 2018-03-29 2019-10-10 豊田合成株式会社 発光装置
KR102391800B1 (ko) 2018-06-15 2022-04-29 주식회사 엘지화학 비정질 박막의 제조방법
TWI783583B (zh) 2020-07-21 2022-11-11 美商應用材料股份有限公司 用於非晶矽中減少氫併入的離子佈植
CN112269277B (zh) * 2020-10-09 2024-03-22 厦门兴华鼎自动化技术有限公司 一种基于应力硅的电光调制器及其制备方法
WO2023276182A1 (ja) * 2021-06-28 2023-01-05 Ｊｓｗアクティナシステム株式会社 熱処理方法、熱処理装置、及び半導体装置の製造方法
CN114784148B (zh) 2022-06-15 2022-09-23 浙江晶科能源有限公司 太阳能电池的制备方法及太阳能电池、光伏组件
CN117558783A (zh) * 2023-07-14 2024-02-13 泰州隆基乐叶光伏科技有限公司 晶硅膜层及其制备方法、太阳能电池及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012484A (ja) * 1998-06-25 2000-01-14 Mitsubishi Electric Corp レーザアニール装置
JP2000077333A (ja) * 1998-09-03 2000-03-14 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法およびレーザアニール装置
JP2000323428A (ja) * 1999-03-08 2000-11-24 Semiconductor Energy Lab Co Ltd ビームホモジナイザーおよびレーザー照射装置
JP2001015764A (ja) * 1999-04-30 2001-01-19 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US6326248B1 (en) * 1994-06-02 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
JPH097945A (ja) * 1995-06-23 1997-01-10 Sharp Corp 結晶性半導体膜の形成方法
JP3977455B2 (ja) * 1995-11-29 2007-09-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3892150B2 (ja) * 1998-07-13 2007-03-14 シャープ株式会社 多結晶薄膜の形成方法及び形成装置
JP2000182956A (ja) * 1998-12-15 2000-06-30 Sony Corp 半導体薄膜の結晶化方法及びレーザ結晶化装置
JP2000231122A (ja) * 1999-02-12 2000-08-22 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012484A (ja) * 1998-06-25 2000-01-14 Mitsubishi Electric Corp レーザアニール装置
JP2000077333A (ja) * 1998-09-03 2000-03-14 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法およびレーザアニール装置
JP2000323428A (ja) * 1999-03-08 2000-11-24 Semiconductor Energy Lab Co Ltd ビームホモジナイザーおよびレーザー照射装置
JP2001015764A (ja) * 1999-04-30 2001-01-19 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100444333C (zh) * 2002-10-07 2008-12-17 株式会社半导体能源研究所 照射激光的方法、激光照射系统和半导体器件的制造方法
US7674663B2 (en) 2002-10-07 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device
EP1468774A1 (en) * 2003-02-28 2004-10-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
US7700462B2 (en) 2003-02-28 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
US9466402B2 (en) 2003-09-16 2016-10-11 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
CN110133850A (zh) * 2018-02-02 2019-08-16 林清富 抬头显示器、发光薄膜与其制法

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