WO2001061753A1 - Elektronisches bauelement mit einer elektrisch leitenden verbindung aus carbon-nanoröhren und verfahren zu seiner herstellung - Google Patents
Elektronisches bauelement mit einer elektrisch leitenden verbindung aus carbon-nanoröhren und verfahren zu seiner herstellung Download PDFInfo
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- WO2001061753A1 WO2001061753A1 PCT/DE2001/000419 DE0100419W WO0161753A1 WO 2001061753 A1 WO2001061753 A1 WO 2001061753A1 DE 0100419 W DE0100419 W DE 0100419W WO 0161753 A1 WO0161753 A1 WO 0161753A1
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- Prior art keywords
- conductive layer
- electronic component
- hole
- layer
- conductive
- Prior art date
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 33
- 239000002041 carbon nanotube Substances 0.000 title claims description 33
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000002071 nanotube Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 37
- 238000010899 nucleation Methods 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 239000002923 metal particle Substances 0.000 claims description 10
- 230000035784 germination Effects 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 230000003197 catalytic effect Effects 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 3
- 230000006911 nucleation Effects 0.000 description 12
- 238000005530 etching Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- QSDQMOYYLXMEPS-UHFFFAOYSA-N dialuminium Chemical compound [Al]#[Al] QSDQMOYYLXMEPS-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
- H01L2221/1094—Conducting structures comprising nanotubes or nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4076—Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques
Definitions
- the invention relates to an electronic component, a method for producing a conductive connection in an electronic component and a method for producing an electronic component.
- a disadvantage of this procedure is that especially with decreasing lateral dimensions, i.e. with a decreasing diameter of a contact hole due to the non-conductive layer and with increasing vertical expansion or at least with an increasing aspect ratio, the complete filling of the contact hole with metal is problematic and prone to errors.
- the deposited metal frequently clogs the upper region of the contact hole, thereby preventing the entire contact hole from being filled with metal. It is therefore often not possible to produce an electrically conductive connection between the two conductive layers.
- an incompletely filled contact hole leads to reliability problems.
- Another disadvantage of the known procedure is that in the case of a contact hole with a very low aspect ratio, the conductivity of the metallic through-contact Clocking decreases sharply, that is, the metallic through-contact represents a considerably limiting element for the scaling of a metallization system and thus an integrated circuit, which requires that several conductive layers are interconnected in the vertical direction of an electronic component by means of non-conductive layers to be electrically connected therethrough.
- a method is known from [2] for growing carbon nanotubes in a self-aligned manner in a perforated dialuminium trioxide matrix (Al2O 3 matrix).
- the invention is therefore based on the problem of creating a conductive connection in an electronic component and an electronic component with a conductive connection between two conductive layers which are insulated from one another by a non-conductive layer, in which the creation of a conductive connection itself Holes with a very large aspect ratio becomes possible.
- An electronic component has a first conductive layer, a non-conductive layer on the first conductive layer and a second conductive layer on the non-conductive layer. At least one hole is provided in the non-conductive layer which completely passes through the non-conductive layer. There is at least in the hole contain a nanotube through which the first conductive layer is conductively connected to the second conductive layer.
- a non-conductive layer is deposited over a first conductive layer.
- a hole is made through the non-conductive layer and at least one nanotube is grown in the hole.
- a second conductive layer is then deposited such that the first conductive layer is conductively connected to the second conductive layer through the nanotubes.
- a first conductive layer is provided in a first step.
- a non-conductive layer is deposited over the first conductive layer and a hole is made, for example etched, through the non-conductive layer.
- a nano-tubes is grown up and at least there is deposited a second conducting layer such that the first conductive layer is conductively connected through 'the nanotubes with the second conductive layer.
- the invention makes it possible to create a reliable electrically conductive connection between two conductive layers, even with contact holes with a very small diameter and large aspect ratio, which are electrically decoupled by a non-conductive layer.
- the conductive layers can be, for example, any metallically conductive material, such as copper, aluminum, silver, etc., the conductive layers usually being an adhesive, diffusion and anti-reflection layer, for example comprising Ti, TiN, Ta, TaN, and / or a combination of these materials.
- the electrically non-conductive layer can be an intermetallic dielectric such as silicon oxide or silicon nitride or another insulating layer made of organic material such as wise polyimide or any combination thereof.
- the electrically conductive connection by means of at least one nanotube is only limited by the diameter of such a nanotube, which in a so-called carbon nanotube is approximately 1.5 nm in diameter.
- the manufacturing process is characterized by its simplicity and robustness, i.e. low susceptibility to errors and the fact that an electrically conductive connection is reliably established.
- the nanotube is a carbon nanotube.
- Such a carbon nanotube can be produced very easily and reliably, even in a contact hole with a small diameter, in a self-adjusted manner.
- the carbon nanotube has a very high conductivity, which significantly exceeds the conductivity of even the best metallic conductors, such as copper or silver, with the same dimensions.
- Such a contact hole can contain a plurality of nanotubes, in principle any number of nanotubes, in order to connect the two conductive layers to one another in an electrically conductive manner.
- Mung layer which preferably has catalytically active metal particles for a growing nanotube, for example with metal particles made of nickel and / or iron, and / or yttrium, and / or cobalt and / or platinum.
- the hole can be etched through the non-conductive layer.
- the invention is in no way limited to a semiconductor element, but can be used in any electronic component in which it is important to conduct two conductive layers that are electrically decoupled by a non-conductive layer interconnect, regardless of whether a layer is a semiconductor layer or not.
- the invention is particularly suitable for use in the context of an integrated circuit.
- Figure 1 shows a cross section through a semiconductor element according to a first embodiment
- FIGS. 2a to 2d cross sections through a semiconductor element, on the basis of which the individual method steps for producing the semiconductor element shown in FIG. 1 are explained;
- FIG. 3 shows a cross section through a semiconductor element according to a second exemplary embodiment of the invention
- FIG. 4a to 4c cross sections through a semiconductor element, using which the individual process steps for Production of the semiconductor element shown in FIG. 3 is explained;
- FIG. 5 shows a cross section through a semiconductor element according to a third exemplary embodiment of the invention.
- FIGS. 6a to 6e cross sections through a semiconductor element, on the basis of which individual method steps for producing the semiconductor element shown in FIG. 5 are explained.
- Fig.l shows a first semiconductor element 100 according to a first embodiment.
- the first semiconductor element 100 has a first conductive layer 101 made of copper or aluminum with an adhesive, diffusion and anti-reflection layer, for example comprising Ti, TiN, Ta, TaN, and / or a combination of these materials.
- a contact hole 103 is etched into the non-conductive layer 102 and at the bottom of the contact hole, i.e. A nucleation layer 104 is deposited on the first conductive layer 101.
- the nucleation layer 104 is a layer of catalytically active metal particles, for example of nickel, iron, yttrium, cobalt and / or platinum.
- the germination layer 104 has a catalytic effect for the growth of a carbon nanotube.
- Ü he b of the non-conductive layer 102 is a second conductive layer 106 of a sequence of Ti, TiN, Ta, TaN, and / or copper and / or aluminum is deposited such that the
- Carbon nanotubes 105 are electrically conductively connected to the second conductive layer 106.
- the non-conductive layer 102 is e.g. by means of a separation process from the gas phase (Chemical Vapor
- the hole (contact hole) 103 is etched through the non-conductive layer 102 up to the surface of the first conductive layer 101 by means of suitable masking of the non-conductive layer 102 and wet etching or dry etching of the non-conductive layer 102 (cf. FIG. 2b).
- the germination layer 104 is deposited in the hole 103 by means of a suitable method (see FIG. 2c), for example in accordance with a CVD method.
- the germination layer 104 has a thickness of 0.1 nm to 50 nm.
- the germination layer 104 according to the first
- the exemplary embodiment is formed from nickel metal particles.
- carbon nanotubes 105 are grown on the nucleation layer 104 in the hole 103 in accordance with the method described in [2] (cf. FIG. 2D).
- the length of the carbon nanotubes 105 depends on the length of time in which the carbon nanotubes are grown on the nucleation layer 104.
- the carbon nanotubes 105 are grown until they protrude beyond the upper end of the non-conductive layer 102.
- the second conductive layer 106 is deposited on the non-conductive layer 102 by means of a CVD process or sputtering process or vapor deposition process.
- CMP method Mechanical polishing (CMP method) or ion beam etching removes the second conductive layer 106 to a desired thickness.
- the carbon nanotubes 105 create an electrically conductive connection between the first conductive layer 101 and the second conductive layer 106 via the germination layer 104, which itself also contains conductive metal particles.
- FIG 3 shows a cross section of a second semiconductor element 300 according to a second exemplary embodiment.
- the same elements in the figures are identified in the second embodiment with the same reference numerals as the elements in the first embodiment.
- the second semiconductor element 300 has the fundamentally the same structure as the first semiconductor element 100, with the difference that the nucleation layer 301 according to the second exemplary embodiment not only extends over the bottom of the hole 103, but that the nucleation layer 301 over the entire first conductive layer 101 is provided .
- the individual layers according to the second embodiment are made of the same materials as the corresponding layers according to the first embodiment.
- a nucleation layer 301 made of metal particles (nickel, iron, yttrium, and / or cobalt) is deposited on the first conductive layer 101.
- the nucleation layer 301 is deposited over the entire surface of the first conductive layer 101 by means of a suitable CVD process, sputtering process or vapor deposition process.
- the germination layer 301 has a thickness of 0.1 nm to 50 nm.
- the non-conductive layer 102 is e.g. deposited by means of a CVD process (see Fig.4a).
- the carbon nanotubes 105 are on the
- Germination layer 301 grew according to the method described in [2].
- the growth is carried out until the length of the carbon nanotubes 105 is sufficient for them to extend over the O Surface Terminal b of the non-conductive layer 102 extend (see 4c).
- the second conductive layer 106 is deposited on the non-conductive layer 102 by means of a CVD method.
- the result is a semiconductor element with an electrically conductive connection using carbon nanotubes between two conductive layers through a contact hole.
- FIG 5 shows a third semiconductor element 500 according to a third exemplary embodiment.
- the third semiconductor element 500 differs from the second semiconductor element 300 essentially only in that a trench 501 is etched into the non-conductive layer 102 and the carbon nanotubes 105 thus do not protrude beyond the surface of the non-conductive layer 102, but rather only across the bottom of the trench 501 into the non-conductive layer 102.
- the individual layers of the third semiconductor element 500 are made of the same materials as the first
- the method for producing the third semiconductor element 500 is explained in detail with reference to FIGS. 6a to 6e.
- the first is conductive S chicht 101, the nucleation layer 301 with a thickness of 0, 1 nm to 50 nm deposited by a suitable CVD method, sputtering method or vapor deposition method.
- the non-conductive layer 102 is deposited on the seeding layer 301 by means of a CVD method.
- the hole 103 is etched into the non-conductive layer 102 up to the surface of the nucleation layer 301 (cf. FIG. 6b).
- a trench 501 is etched into the non-conductive layer 102 by means of dry etching or wet etching (cf. FIG. 6c).
- the carbon nanotubes 102 are grown on the nucleation layer 301 to a length such that the carbon nanotubes 102 protrude beyond the lower surface of the trench 501, but not beyond the entire non-conductive layer 102 (see FIG. .DELTA.D).
- the second conductive layer 106 is deposited in the trench 501 and on the non-conductive layer 102 by means of a CVD method.
- the second conductive layer 106 is reduced to a desired thickness by means of a suitable etching method, a chemical mechanical polishing method or by means of ion beam etching, so that the surface of the second conductive layer 106 is flat with the surface of the non-conductive layer 102.
- a CVD process using carbon monoxide CO, methane CH4, or also acetylene C2H2 or a so-called plasma enhanced can be used as the CVD process CVD process.
- the carbon nanotubes 105 can be brought to the required length by chemical mechanical polishing or ion beam etching at an oblique angle (so that the ions cannot penetrate significantly into the contact hole during ion beam etching), i.e. to a length such that the carbon nanotubes 105 contact at least the second conductive layer 106.
- the carbon nanotubes can also be produced using an anisotropic plasma etching process, e.g. used for structuring organic materials, brought to the required length.
- the invention is not limited to a three-layer structure.
- the semiconductor element can be used in any semiconductor structure, i.e. it can represent a partial semiconductor element of a very multilayer semiconductor element for contacting two conductive layers in the semiconductor element.
- the invention can be clearly seen in the fact that two electrically conductive layers, which are electrically decoupled from one another in a semiconductor element by a non-conductive layer, are electrically conductively connected to one another by means of a contact hole by means of carbon nanotubes.
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/204,180 US7321097B2 (en) | 2000-02-16 | 2001-02-02 | Electronic component comprising an electrically conductive connection consisting of carbon nanotubes and a method for producing the same |
EP01909557A EP1264344A1 (de) | 2000-02-16 | 2001-02-02 | Elektronisches bauelement mit einer elektrisch leitenden verbindung aus carbon-nanoröhren und verfahren zu seiner herstellung |
JP2001560448A JP4549002B2 (ja) | 2000-02-16 | 2001-02-02 | カーボンナノチューブからなる電気的に導電性の接続を有する電子部品とその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10006964A DE10006964C2 (de) | 2000-02-16 | 2000-02-16 | Elektronisches Bauelement mit einer leitenden Verbindung zwischen zwei leitenden Schichten und Verfahren zum Herstellen eines elektronischen Bauelements |
DE10006964.9 | 2000-02-16 |
Publications (1)
Publication Number | Publication Date |
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WO2001061753A1 true WO2001061753A1 (de) | 2001-08-23 |
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PCT/DE2001/000419 WO2001061753A1 (de) | 2000-02-16 | 2001-02-02 | Elektronisches bauelement mit einer elektrisch leitenden verbindung aus carbon-nanoröhren und verfahren zu seiner herstellung |
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EP (1) | EP1264344A1 (de) |
JP (1) | JP4549002B2 (de) |
KR (1) | KR100494248B1 (de) |
DE (1) | DE10006964C2 (de) |
TW (1) | TW503482B (de) |
WO (1) | WO2001061753A1 (de) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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EP1361608A3 (de) * | 2002-05-10 | 2004-11-24 | Texas Instruments Incorporated | Herstellung einer elektrischen Leitung zwischen einem aktiven Bereich und einer leitfähigen Schicht in einer Halbleitervorrichtung mittels Kohlenstoffnanoröhren |
DE10324377A1 (de) * | 2003-05-28 | 2005-01-05 | Infineon Technologies Ag | Wärmeableiteinrichtung, deren Verwendung und Halbleiterbauelementeanordnung |
EP1563545A2 (de) * | 2002-11-19 | 2005-08-17 | William Marsh Rice University | Verfahren zur erzeugung einer funktionalen schnittstelle zwischen einem nanopartikel, einer nanoröhre oder einem nanodraht und einem biologischen molekül oder system |
EP1593164A2 (de) * | 2003-02-12 | 2005-11-09 | Nantero, Inc. | Einrichtungen mit vertikalangeordneten nanofabric-artikeln und verfahren zu ihrer herstellung |
WO2005112126A1 (en) | 2004-05-14 | 2005-11-24 | Chalmers Intellectual Property Rights Ab | Electromechanical nanotube tunneling device comprising source, drain and gate |
US7354823B2 (en) | 2004-09-08 | 2008-04-08 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit devices having carbon nanotube electrodes therein |
EP2138457A1 (de) | 2008-06-27 | 2009-12-30 | Commissariat à l'Energie Atomique | Verfahren zur Herstellung einer Matte aus Kohlenstoffnanoröhren auf einem Leiter- oder Halbleitersubstrat |
US7682527B2 (en) | 2002-11-19 | 2010-03-23 | William Marsh Rice University | Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission |
US7719067B2 (en) | 2001-07-25 | 2010-05-18 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
US8039380B2 (en) | 2008-06-27 | 2011-10-18 | Commissariat A L'energie Atomique | Procedure for obtaining nanotube layers of carbon with conductor or semiconductor substrate |
US8062702B2 (en) | 2001-11-20 | 2011-11-22 | William Marsh Rice University | Coated fullerenes, composites and dielectrics made therefrom |
US8598708B2 (en) | 2006-12-21 | 2013-12-03 | Commissariat A L'energie Atomique | Carbon nanotube-based interconnection element |
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---|---|---|---|---|
US7084507B2 (en) | 2001-05-02 | 2006-08-01 | Fujitsu Limited | Integrated circuit device and method of producing the same |
US6921462B2 (en) * | 2001-12-17 | 2005-07-26 | Intel Corporation | Method and apparatus for producing aligned carbon nanotube thermal interface structure |
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JP4454242B2 (ja) * | 2003-03-25 | 2010-04-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
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JP2005041835A (ja) * | 2003-07-24 | 2005-02-17 | Fuji Xerox Co Ltd | カーボンナノチューブ構造体、その製造方法、カーボンナノチューブ転写体および溶液 |
JP4689218B2 (ja) * | 2003-09-12 | 2011-05-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
DE10351230B3 (de) * | 2003-11-03 | 2005-03-10 | Infineon Technologies Ag | Verfahren zur Abscheidung eines Katalysators |
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AU2003301031A1 (en) | 2003-12-18 | 2005-08-03 | International Business Machines Corporation | Carbon nanotube conductor for trench capacitors |
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US7456052B2 (en) * | 2003-12-30 | 2008-11-25 | Intel Corporation | Thermal intermediate apparatus, systems, and methods |
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DE102004031128A1 (de) * | 2004-06-28 | 2006-01-19 | Infineon Technologies Ag | Elektrischer Schaltkreis mit einer Kohlenstoff-Leiterstruktur und Verfahren zum Herstellen einer Kohlenstoff-Leiterstruktur eines elektrischen Schaltkreises |
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US20080020499A1 (en) * | 2004-09-10 | 2008-01-24 | Dong-Wook Kim | Nanotube assembly including protective layer and method for making the same |
US7943418B2 (en) * | 2004-09-16 | 2011-05-17 | Etamota Corporation | Removing undesirable nanotubes during nanotube device fabrication |
US7776307B2 (en) * | 2004-09-16 | 2010-08-17 | Etamota Corporation | Concentric gate nanotube transistor devices |
US7345296B2 (en) | 2004-09-16 | 2008-03-18 | Atomate Corporation | Nanotube transistor and rectifying devices |
US7462890B1 (en) | 2004-09-16 | 2008-12-09 | Atomate Corporation | Nanotube transistor integrated circuit layout |
JP2006108210A (ja) * | 2004-10-01 | 2006-04-20 | Fujitsu Ltd | 配線接続構造およびその形成方法 |
JP4167212B2 (ja) | 2004-10-05 | 2008-10-15 | 富士通株式会社 | カーボンナノチューブ構造体、半導体装置、および半導体パッケージ |
JP2006120730A (ja) * | 2004-10-19 | 2006-05-11 | Fujitsu Ltd | 層間配線に多層カーボンナノチューブを用いる配線構造及びその製造方法 |
JP2006148063A (ja) * | 2004-10-22 | 2006-06-08 | Renesas Technology Corp | 配線構造、半導体装置、mramおよび半導体装置の製造方法 |
US20100065820A1 (en) * | 2005-02-14 | 2010-03-18 | Atomate Corporation | Nanotube Device Having Nanotubes with Multiple Characteristics |
US7271079B2 (en) * | 2005-04-06 | 2007-09-18 | International Business Machines Corporation | Method of doping a gate electrode of a field effect transistor |
KR100707190B1 (ko) * | 2005-05-07 | 2007-04-13 | 삼성전자주식회사 | 나노 와이어를 포함하는 상변환 메모리 소자 및 그 제조방법 |
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JP5009511B2 (ja) * | 2005-06-06 | 2012-08-22 | 富士通株式会社 | 電気的接続構造、その製造方法および半導体集積回路装置 |
US20060281306A1 (en) * | 2005-06-08 | 2006-12-14 | Florian Gstrein | Carbon nanotube interconnect contacts |
WO2007002297A2 (en) | 2005-06-24 | 2007-01-04 | Crafts Douglas E | Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures |
US20070105356A1 (en) * | 2005-11-10 | 2007-05-10 | Wei Wu | Method of controlling nanowire growth and device with controlled-growth nanowire |
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US7625817B2 (en) * | 2005-12-30 | 2009-12-01 | Intel Corporation | Method of fabricating a carbon nanotube interconnect structures |
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US8354855B2 (en) * | 2006-10-16 | 2013-01-15 | Formfactor, Inc. | Carbon nanotube columns and methods of making and using carbon nanotube columns as probes |
US8130007B2 (en) | 2006-10-16 | 2012-03-06 | Formfactor, Inc. | Probe card assembly with carbon nanotube probes having a spring mechanism therein |
CA2666815C (en) * | 2006-10-17 | 2013-05-28 | Purdue Research Foundation | Electrothermal interface material enhancer |
KR100874912B1 (ko) * | 2006-12-06 | 2008-12-19 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
US8168495B1 (en) | 2006-12-29 | 2012-05-01 | Etamota Corporation | Carbon nanotube high frequency transistor technology |
DE102007006175A1 (de) | 2007-02-07 | 2008-08-14 | Osram Opto Semiconductors Gmbh | Wärmeleitfähige Schicht und Verfahren zur Herstellung einer wärmeleitfähigen Schicht |
KR100827524B1 (ko) * | 2007-04-06 | 2008-05-06 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
US20080272361A1 (en) * | 2007-05-02 | 2008-11-06 | Atomate Corporation | High Density Nanotube Devices |
FR2917893B1 (fr) | 2007-06-22 | 2009-08-28 | Commissariat Energie Atomique | Procede de fabrication d'une connexion electrique a base de nanotubes de carbone |
FR2919111B1 (fr) | 2007-07-17 | 2009-10-09 | Commissariat Energie Atomique | Procede de fabrication d'une connexion electrique a base de nanotubes et ayant des cavites d'air |
US8149007B2 (en) * | 2007-10-13 | 2012-04-03 | Formfactor, Inc. | Carbon nanotube spring contact structures with mechanical and electrical components |
US8919428B2 (en) * | 2007-10-17 | 2014-12-30 | Purdue Research Foundation | Methods for attaching carbon nanotubes to a carbon substrate |
US8283786B2 (en) * | 2007-12-21 | 2012-10-09 | Advanced Micro Devices, Inc. | Integrated circuit system with contact integration |
WO2009088882A2 (en) * | 2007-12-31 | 2009-07-16 | Atomate Corporation | Edge-contacted vertical carbon nanotube transistor |
US8110476B2 (en) | 2008-04-11 | 2012-02-07 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
WO2009151397A1 (en) * | 2008-06-13 | 2009-12-17 | Qunano Ab | Nanostructured mos capacitor |
US7858506B2 (en) | 2008-06-18 | 2010-12-28 | Micron Technology, Inc. | Diodes, and methods of forming diodes |
KR100997788B1 (ko) * | 2008-06-30 | 2010-12-02 | 주식회사 하이닉스반도체 | 반도체 패키지 |
US8557685B2 (en) | 2008-08-07 | 2013-10-15 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
US9494615B2 (en) * | 2008-11-24 | 2016-11-15 | Massachusetts Institute Of Technology | Method of making and assembling capsulated nanostructures |
US7943989B2 (en) * | 2008-12-31 | 2011-05-17 | Alpha And Omega Semiconductor Incorporated | Nano-tube MOSFET technology and devices |
US9508805B2 (en) | 2008-12-31 | 2016-11-29 | Alpha And Omega Semiconductor Incorporated | Termination design for nanotube MOSFET |
JP5423029B2 (ja) * | 2009-02-12 | 2014-02-19 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US8541058B2 (en) * | 2009-03-06 | 2013-09-24 | Timothy S. Fisher | Palladium thiolate bonding of carbon nanotubes |
US20100252317A1 (en) * | 2009-04-03 | 2010-10-07 | Formfactor, Inc. | Carbon nanotube contact structures for use with semiconductor dies and other electronic devices |
US8272124B2 (en) * | 2009-04-03 | 2012-09-25 | Formfactor, Inc. | Anchoring carbon nanotube columns |
US8299494B2 (en) | 2009-06-12 | 2012-10-30 | Alpha & Omega Semiconductor, Inc. | Nanotube semiconductor devices |
US7910486B2 (en) * | 2009-06-12 | 2011-03-22 | Alpha & Omega Semiconductor, Inc. | Method for forming nanotube semiconductor devices |
US7892924B1 (en) * | 2009-12-02 | 2011-02-22 | Alpha And Omega Semiconductor, Inc. | Method for making a charge balanced multi-nano shell drift region for superjunction semiconductor device |
KR101015507B1 (ko) * | 2010-01-25 | 2011-02-22 | 삼성전자주식회사 | 탄소나노튜브를 이용한 반도체 소자의 배선 형성 방법 및 이 방법에 의해 제조된 반도체 소자 |
US8946903B2 (en) | 2010-07-09 | 2015-02-03 | Micron Technology, Inc. | Electrically conductive laminate structure containing graphene region |
US8872176B2 (en) | 2010-10-06 | 2014-10-28 | Formfactor, Inc. | Elastic encapsulated carbon nanotube based electrical contacts |
CN102468220B (zh) * | 2010-11-08 | 2013-12-25 | 中国科学院微电子研究所 | 一种金属互连结构及其形成方法 |
JP5813682B2 (ja) * | 2013-03-08 | 2015-11-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
US9406888B2 (en) | 2013-08-07 | 2016-08-02 | GlobalFoundries, Inc. | Carbon nanotube device |
US9391023B2 (en) * | 2014-02-14 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company Limited | Method for producing salicide and a carbon nanotube metal contact |
US10002826B2 (en) * | 2014-10-27 | 2018-06-19 | Taiwan Semiconductor Manufacturing Company | Semiconductor device structure with conductive pillar and conductive line and method for forming the same |
KR101728986B1 (ko) | 2016-07-18 | 2017-04-20 | 박달수 | 간에 이로운 한약재 추출물을 이용한 식품 제조방법 및 그 식품 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0726621A2 (de) * | 1995-02-10 | 1996-08-14 | AT&T Corp. | Anisotropische leitfähige Verbund-Element und Vorrichtung zu dessen Zwischenverbindung |
US5818700A (en) * | 1996-09-24 | 1998-10-06 | Texas Instruments Incorporated | Microelectronic assemblies including Z-axis conductive films |
EP0913508A2 (de) * | 1997-10-30 | 1999-05-06 | Canon Kabushiki Kaisha | Kohlenstoff-Nanofaser-Einrichtung, Verfahren zur Herstellung dieser Einrichtung, und elektronenstrahlende Einrichtung |
EP0918354A2 (de) * | 1997-11-20 | 1999-05-26 | Texas Instruments Incorporated | Scheibenbereichsanordnung von Packungen in Chip-Grösse |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5192835A (en) * | 1990-10-09 | 1993-03-09 | Eastman Kodak Company | Bonding of solid state device to terminal board |
US5712607A (en) * | 1996-04-12 | 1998-01-27 | Dittmer; Timothy W. | Air-dielectric stripline |
JP3363759B2 (ja) | 1997-11-07 | 2003-01-08 | キヤノン株式会社 | カーボンナノチューブデバイスおよびその製造方法 |
KR19990043770A (ko) * | 1997-11-29 | 1999-06-15 | 정선종 | 탄소 나노튜브를 이용한 전계 방출 소자의 제조 방법 |
US6870263B1 (en) | 1998-03-31 | 2005-03-22 | Infineon Technologies Ag | Device interconnection |
JP3955386B2 (ja) | 1998-04-09 | 2007-08-08 | 富士通株式会社 | 半導体装置及びその製造方法 |
US6297063B1 (en) * | 1999-10-25 | 2001-10-02 | Agere Systems Guardian Corp. | In-situ nano-interconnected circuit devices and method for making the same |
US7335603B2 (en) * | 2000-02-07 | 2008-02-26 | Vladimir Mancevski | System and method for fabricating logic devices comprising carbon nanotube transistors |
-
2000
- 2000-02-16 DE DE10006964A patent/DE10006964C2/de not_active Expired - Fee Related
-
2001
- 2001-02-02 WO PCT/DE2001/000419 patent/WO2001061753A1/de active IP Right Grant
- 2001-02-02 EP EP01909557A patent/EP1264344A1/de not_active Ceased
- 2001-02-02 US US10/204,180 patent/US7321097B2/en not_active Expired - Fee Related
- 2001-02-02 JP JP2001560448A patent/JP4549002B2/ja not_active Expired - Fee Related
- 2001-02-02 KR KR10-2002-7010550A patent/KR100494248B1/ko not_active IP Right Cessation
- 2001-02-15 TW TW090103370A patent/TW503482B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0726621A2 (de) * | 1995-02-10 | 1996-08-14 | AT&T Corp. | Anisotropische leitfähige Verbund-Element und Vorrichtung zu dessen Zwischenverbindung |
US5818700A (en) * | 1996-09-24 | 1998-10-06 | Texas Instruments Incorporated | Microelectronic assemblies including Z-axis conductive films |
EP0913508A2 (de) * | 1997-10-30 | 1999-05-06 | Canon Kabushiki Kaisha | Kohlenstoff-Nanofaser-Einrichtung, Verfahren zur Herstellung dieser Einrichtung, und elektronenstrahlende Einrichtung |
EP0918354A2 (de) * | 1997-11-20 | 1999-05-26 | Texas Instruments Incorporated | Scheibenbereichsanordnung von Packungen in Chip-Grösse |
Non-Patent Citations (2)
Title |
---|
DEKKER C: "CARBON NANOTUBES AS MOLECULAR QUANTUM WIRES", PHYSICS TODAY,AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY,US, vol. 52, no. 5, May 1999 (1999-05-01), pages 22 - 28, XP000999906, ISSN: 0031-9228 * |
MARTIN C R: "TEMPLATE SYNTHESIS OF POLYMERIC AND METAL MICROTUBULES", ADVANCED MATERIALS,DE,VCH VERLAGSGESELLSCHAFT, WEINHEIM, vol. 3, no. 9, 1 September 1991 (1991-09-01), pages 457 - 459, XP000329351, ISSN: 0935-9648 * |
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WO2003078305A1 (en) * | 2002-03-20 | 2003-09-25 | Chalmers Intellectual Property Rights Ab | Nanotube relay device |
US7279760B2 (en) | 2002-03-20 | 2007-10-09 | Chalmers Intellectual Property Rights Ab | Nanotube relay device |
EP1361608A3 (de) * | 2002-05-10 | 2004-11-24 | Texas Instruments Incorporated | Herstellung einer elektrischen Leitung zwischen einem aktiven Bereich und einer leitfähigen Schicht in einer Halbleitervorrichtung mittels Kohlenstoffnanoröhren |
DE10250868A1 (de) * | 2002-10-31 | 2004-05-19 | Infineon Technologies Ag | Vertikal integriertes Bauelement, Bauelement-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Bauelements |
US7709827B2 (en) | 2002-10-31 | 2010-05-04 | Qimonda, AG | Vertically integrated field-effect transistor having a nanostructure therein |
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DE10250868B4 (de) * | 2002-10-31 | 2008-03-06 | Qimonda Ag | Vertikal integrierter Feldeffekttransistor, Feldeffekttransistor-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Feldeffekttransistors |
EP1563545A2 (de) * | 2002-11-19 | 2005-08-17 | William Marsh Rice University | Verfahren zur erzeugung einer funktionalen schnittstelle zwischen einem nanopartikel, einer nanoröhre oder einem nanodraht und einem biologischen molekül oder system |
EP1563545A4 (de) * | 2002-11-19 | 2009-04-29 | Univ Rice William M | Verfahren zur erzeugung einer funktionalen schnittstelle zwischen einem nanopartikel, einer nanoröhre oder einem nanodraht und einem biologischen molekül oder system |
US7692218B2 (en) | 2002-11-19 | 2010-04-06 | William Marsh Rice University | Method for creating a functional interface between a nanoparticle, nanotube or nanowire, and a biological molecule or system |
US7682527B2 (en) | 2002-11-19 | 2010-03-23 | William Marsh Rice University | Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission |
US8361349B2 (en) | 2002-11-19 | 2013-01-29 | William Marsh Rice University | Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission |
EP1593164A2 (de) * | 2003-02-12 | 2005-11-09 | Nantero, Inc. | Einrichtungen mit vertikalangeordneten nanofabric-artikeln und verfahren zu ihrer herstellung |
EP1593164A4 (de) * | 2003-02-12 | 2009-05-13 | Nantero Inc | Einrichtungen mit vertikalangeordneten nanofabric-artikeln und verfahren zu ihrer herstellung |
US7326465B2 (en) | 2003-02-24 | 2008-02-05 | Infineon Technologies Ag | Integrated electronic component |
WO2004075288A1 (de) * | 2003-02-24 | 2004-09-02 | Infineon Technologies Ag | Integriertes elektronisches bauelement mit gezielt erzeugten nanoröhren in vertikalen strukturen |
CN100459098C (zh) * | 2003-02-24 | 2009-02-04 | 因芬尼昂技术股份公司 | 铅直结构中具特制纳米管的集成电子组件及其制造方法 |
JP2010004087A (ja) * | 2003-05-01 | 2010-01-07 | Samsung Electronics Co Ltd | カーボンナノチューブを利用した半導体素子の配線形成方法およびその方法により製造された半導体素子 |
CN100369205C (zh) * | 2003-05-01 | 2008-02-13 | 三星电子株式会社 | 用碳纳米管形成半导体装置用导电线的方法及半导体装置 |
US7247897B2 (en) | 2003-05-01 | 2007-07-24 | Samsung Electronics Co., Ltd. | Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured |
EP1473767A3 (de) * | 2003-05-01 | 2006-05-10 | Samsung Electronics Co., Ltd. | Verfahren zur Herstellung einer leitenden Bahn für eine Halbleitervorrichtung mit einer Kohlenstoffnanoröhre, und mit diesem Verfahren hergestellte Halbleitervorrichtung |
JP2004336054A (ja) * | 2003-05-01 | 2004-11-25 | Samsung Electronics Co Ltd | カーボンナノチューブを利用した半導体素子の配線形成方法およびその方法により製造された半導体素子 |
EP1473767A2 (de) * | 2003-05-01 | 2004-11-03 | Samsung Electronics Co., Ltd. | Verfahren zur Herstellung einer leitenden Bahn für eine Halbleitervorrichtung mit einer Kohlenstoffnanoröhre, und mit diesem Verfahren hergestellte Halbleitervorrichtung |
DE10324377A1 (de) * | 2003-05-28 | 2005-01-05 | Infineon Technologies Ag | Wärmeableiteinrichtung, deren Verwendung und Halbleiterbauelementeanordnung |
WO2005112126A1 (en) | 2004-05-14 | 2005-11-24 | Chalmers Intellectual Property Rights Ab | Electromechanical nanotube tunneling device comprising source, drain and gate |
US7354823B2 (en) | 2004-09-08 | 2008-04-08 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit devices having carbon nanotube electrodes therein |
US8598708B2 (en) | 2006-12-21 | 2013-12-03 | Commissariat A L'energie Atomique | Carbon nanotube-based interconnection element |
EP2138457A1 (de) | 2008-06-27 | 2009-12-30 | Commissariat à l'Energie Atomique | Verfahren zur Herstellung einer Matte aus Kohlenstoffnanoröhren auf einem Leiter- oder Halbleitersubstrat |
US8039380B2 (en) | 2008-06-27 | 2011-10-18 | Commissariat A L'energie Atomique | Procedure for obtaining nanotube layers of carbon with conductor or semiconductor substrate |
Also Published As
Publication number | Publication date |
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JP4549002B2 (ja) | 2010-09-22 |
TW503482B (en) | 2002-09-21 |
DE10006964A1 (de) | 2001-09-13 |
US20030179559A1 (en) | 2003-09-25 |
KR100494248B1 (ko) | 2005-06-13 |
US7321097B2 (en) | 2008-01-22 |
JP2003523608A (ja) | 2003-08-05 |
EP1264344A1 (de) | 2002-12-11 |
DE10006964C2 (de) | 2002-01-31 |
KR20020079854A (ko) | 2002-10-19 |
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