JP5009511B2 - 電気的接続構造、その製造方法および半導体集積回路装置 - Google Patents
電気的接続構造、その製造方法および半導体集積回路装置 Download PDFInfo
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- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 5
- 229910003472 fullerene Inorganic materials 0.000 description 5
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
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Description
この場合、触媒微粒子は通常、Ta等のバリア膜や、近年CNTの成長を促進することが明らかとなったTiの膜上に堆積され、そこからCNTが成長されることになる。図2は、ビアホール底に堆積されたTi膜上コバルト微粒子から成長したCNTがビアホール上にまで伸びている状態を示す写真である。図2から、CNTが、ビアの軸方向に配向して、高密度でビアホール内に成長していることがわかる。
導電体に炭素細長構造体が電気的に接続された電気的接続構造において、当該導電体上に、導電性触媒担持体層と当該炭素細長構造体を生成するための触媒微粒子層と当該炭素細長構造体とが順次積層されてなる
電気的接続構造。
前記触媒微粒子層が、前記導電性触媒担持体層上に、予め微粒子化した触媒微粒子を堆積してなるものである、請求項1に記載の電気的接続構造。
前記炭素細長構造体がビアホール中に設けられたものである、請求項1または2に記載の電気的接続構造。
前記導電性触媒担持体層が耐酸化性物質よりなる、請求項1〜3のいずれかに記載の電気的接続構造。
前記導電性触媒担持体層が炭素細長構造体の成長を促進する機能を有する、請求項1〜4のいずれかに記載の電気的接続構造。
前記導電性触媒担持体層が前記導電体を構成する金属の拡散防止機能を有する、請求項1〜5のいずれかに記載の電気的接続構造。
前記触媒微粒子が、Co、Ni、Fe、Pd、Ptおよびそれらの合金からなる群から選ばれた金属の微粒子である、請求項1〜6のいずれかに記載の電気的接続構造。
前記導電性触媒担持体層が、HfN膜層、ZrN膜層、TiN膜層、またはそれらの多層膜である、請求項1〜7のいずれかに記載の電気的接続構造。
前記導電性触媒担持体層が、前記導電体側に設けられた、前記導電体を構成する金属の拡散防止機能を有する第一層と、前記触媒微粒子層側に設けられた、炭素細長構造体の成長を促進する機能を有する第二層とを含んでなる、請求項1〜8のいずれかに記載の電気的接続構造。
前記第一層がTa層であり、前記第二層が、HfN膜層、ZrN膜層またはTiN膜層である、請求項9に記載の電気的接続構造。
請求項1〜10のいずれかに記載の電気的接続構造を有してなる半導体集積回路装置。
導電体上に導電性触媒担持体層を設け、
予め微粒子化した触媒微粒子を当該導電性触媒担持体層上に堆積して触媒微粒子層となし、
当該触媒微粒子層上に炭素細長構造体を設ける、
電気的接続構造の製造方法。
真空下において、粒径を揃えた触媒微粒子ビームを前記導電性触媒担持体層面上に照射して前記触媒微粒子層を形成する、請求項12に記載の電気的接続構造の製造方法。
前記炭素細長構造体がビアホール中に設けられたものである、請求項12または13に記載の電気的接続構造の製造方法。
前記導電性触媒担持体層が耐酸化性物質よりなる、請求項12〜14のいずれかに記載の電気的接続構造の製造方法。
前記導電性触媒担持体層が炭素細長構造体の成長を促進する機能を有する、請求項12〜15のいずれかに記載の電気的接続構造の製造方法。
前記導電性触媒担持体層が前記導電体を構成する金属の拡散防止機能を有する、請求項12〜16のいずれかに記載の電気的接続構造の製造方法。
前記触媒微粒子が、Co、Ni、Fe、Pd、Ptおよびそれらの合金からなる群から選ばれた金属の微粒子である、請求項12〜17のいずれかに記載の電気的接続構造の製造方法。
前記導電性触媒担持体層が、HfN膜層、ZrN膜層、TiN膜層、またはそれらの多層膜である、請求項12〜18のいずれかに記載の電気的接続構造の製造方法。
前記導電性触媒担持体層が、前記導電体側に設けられた、前記導電体を構成する金属の拡散防止機能を有する第一層と、前記触媒微粒子層側に設けられた、炭素細長構造体の成長を促進する機能を有する第二層とを含んでなる、請求項12〜19のいずれかに記載の電気的接続構造の製造方法。
前記第一層がTa層であり、前記第二層が、HfN膜層、ZrN膜層またはTiN膜層である、請求項20に記載の電気的接続構造の製造方法。
請求項12〜21のいずれかに記載の電気的接続構造の製造方法により製造された電気的接続構造を有してなる半導体集積回路装置。
2 下地層
3 Cu配線層
4 Ta膜
5 絶縁層
6 Ti膜
7 触媒金属膜
8 CNT
51 銅配線層
52 Ta膜
53 SiO2絶縁層
54 ビアホール
55 CNT
56 TiN膜
57 Co微粒子
58 フォトレジスト層
61 シリコン基板
62 トランジスタ
63a〜63f
層間絶縁膜
65 配線
66 ビア
67 コンタクト
68 保護層
70 基板
71 微粒子発生手段
72 ポンプ
73 分級手段
74 堆積チャンバー
75 差動排気部
75a,b 差動排気用真空ポンプ
76 ノズル
77 高真空部
78 微粒子収束部
79 可動ステージ
Claims (8)
- 導電体に炭素細長構造体が電気的に接続された電気的接続構造において、当該導電体上に、導電性触媒担持体層と当該炭素細長構造体を生成するための触媒微粒子層と当該炭素細長構造体とが順次積層されてなる電気的接続構造であって、
前記触媒微粒子層が、Co、Ni、Feおよびそれらを含む合金(Pdを含む合金を除く)からなる群から選ばれた金属の微粒子からなり、
前記導電性触媒担持体層が、HfN膜層である電気的接続構造。 - 前記触媒微粒子層が、前記導電性触媒担持体層上に、予め微粒子化した触媒微粒子を堆積してなるものである、請求項1に記載の電気的接続構造。
- 前記炭素細長構造体がビアホール中に設けられたものである、請求項1または2に記載の電気的接続構造。
- 前記導電性触媒担持体層が炭素細長構造体の成長を促進する機能を有する、請求項1〜3のいずれかに記載の電気的接続構造。
- 前記導電性触媒担持体層が前記導電体を構成する金属の拡散防止機能を有する、請求項1〜4のいずれかに記載の電気的接続構造。
- 請求項1〜5のいずれかに記載の電気的接続構造を有してなる半導体集積回路装置。
- 導電体上に導電性触媒担持体層を設け、
予め微粒子化した触媒微粒子を当該導電性触媒担持体層上に堆積して触媒微粒子層となし、
当該触媒微粒子層上に炭素細長構造体を設ける電気的接続構造の製造方法であって、
前記触媒微粒子が、Co、Ni、Feおよびそれらを含む合金(Pdを含む合金を除く)からなる群から選ばれた金属の微粒子であり、
前記導電性触媒担持体層が、HfN膜層である電気的接続構造の製造方法。 - 真空下において、粒径を揃えた触媒微粒子ビームを前記導電性触媒担持体層面上に照射して前記触媒微粒子層を形成する、請求項7に記載の電気的接続構造の製造方法。
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KR1020050105990A KR100858453B1 (ko) | 2005-06-06 | 2005-11-07 | 전기적 접속 구조, 그 제조 방법 및 반도체 집적 회로 장치 |
US11/280,269 US8338822B2 (en) | 2005-06-06 | 2005-11-17 | Electrical connection structure having elongated carbon structures with fine catalyst particle layer |
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KR100881621B1 (ko) * | 2007-01-12 | 2009-02-04 | 삼성전자주식회사 | 반도체 장치 및 그 형성방법 |
JP2008210954A (ja) * | 2007-02-26 | 2008-09-11 | Fujitsu Ltd | カーボンナノチューブバンプ構造体とその製造方法、およびこれを用いた半導体装置 |
JP5092500B2 (ja) * | 2007-03-30 | 2012-12-05 | 富士通株式会社 | カーボンナノチューブデバイス及びその製造方法 |
US8283786B2 (en) * | 2007-12-21 | 2012-10-09 | Advanced Micro Devices, Inc. | Integrated circuit system with contact integration |
JP5506657B2 (ja) | 2008-02-29 | 2014-05-28 | 富士通株式会社 | シート状構造体、半導体装置及び炭素構造体の成長方法 |
WO2011062072A1 (ja) * | 2009-11-19 | 2011-05-26 | 株式会社 村田製作所 | 電子デバイス |
JP2011204769A (ja) * | 2010-03-24 | 2011-10-13 | Toshiba Corp | 半導体装置及びその製造方法 |
CN105226006B (zh) * | 2014-06-12 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 互连结构的形成方法 |
JP2016012799A (ja) | 2014-06-27 | 2016-01-21 | Tdk株式会社 | 高周波伝送線路、アンテナ及び電子回路基板 |
JP2016012798A (ja) | 2014-06-27 | 2016-01-21 | Tdk株式会社 | 高周波伝送線路、アンテナ及び電子回路基板 |
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JP3768908B2 (ja) * | 2001-03-27 | 2006-04-19 | キヤノン株式会社 | 電子放出素子、電子源、画像形成装置 |
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JP4683188B2 (ja) * | 2002-11-29 | 2011-05-11 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JP4401094B2 (ja) * | 2003-03-20 | 2010-01-20 | 富士通株式会社 | 炭素元素円筒型構造体へのオーミック接続構造及びその作製方法 |
JP2004284919A (ja) * | 2003-03-25 | 2004-10-14 | Mitsubishi Electric Corp | カーボンナノチューブ形成用基板の製造方法およびこの基板を用いたカーボンナノチューブの製造方法 |
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