CN1964028B - 散热器 - Google Patents
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Abstract
本发明提供一种散热器,其包括:一由高分子材料制成的基底,该基底具有一第一表面和一与所述第一表面相对的第二表面;和多个碳纳米管,所述多个碳纳米管从基底的第一表面穿过所述第二表面向外延伸。本发明提供的散热器中所述多个碳纳米管可做为散热器的散热鳍片,由于碳纳米管具有极大的高径比和较小体积的特点,使得所述散热器在具有较好的散热性能的同时具有较小的体积。
Description
【技术领域】
本发明涉及热传领域,尤其涉及一种散热器及其制造方法。
【背景技术】
随着集成电路技术的不断进步和工业应用需求的不断提高,电子信息产业蓬勃迅速发展,计算机的应用得到普及,且其更新换代的速度日趋加快,因此,计算机内的核心元件——中央处理器的运行频率越来越高,高频高速处理器不断推出,但处理器运行频率越高,其单位时间内产生的热量越多,热量累积将引起温度升高,从而导致其运行性能包括稳定性下降,因此,必需及时地将其产生的热量散发出去,目前,散热已经成为每一代高速处理器推出时必需解决的问题。
金属氧化物场效应二极管(Metal Oxide Semiconductor FieldEffect Transistor,MOSFET)是计算机主机板上中央处理器的电压调节单元中的重要元件,其主要起稳压和滤波作用。由于目前的中央处理器频率越来越高,功率越来越大,大量电容器被应用到中央处理器的电压调节单元中,导致MOSFET的温度越来越高,其温度甚至能达到125℃。如此,会严重影响中央处理器的性能,有必要对MOSFET进行散热。然而,由于上述MOSFET相对于中央处理器等元件,体积小很多,且由于计算机主机板上空间的限制,要求用于MOSFET散热的散热器体积小且有较好的散热性能。
【发明内容】
有鉴于此,有必要提供一种体积小且有较好散热性能的散热器。
一种散热器,其包括:一由高分子材料制成的基底,该基底具有一第一表面和一与所述第一表面相对的第二表面;和多个碳纳米管,所述多个碳纳米管从基底的第一表面穿过所述第二表面向外延伸。
一种散热器的制造方法,其包括以下步骤:提供一基板;在所述基板上形成多个碳纳米管;在所述多个碳纳米管一末端形成一由高分子材料制成的基底;除去所述基板,得到一散热器。
所述散热器包括一基底和多个碳纳米管,其中多个碳纳米管可做为散热器的散热鳍片,由于碳纳米管直径很小,一般为几纳米到几十纳米,使得单个碳纳米管散热鳍片具有极大的高径比,一般在10000∶1以上,大大增加了所述散热器的散热面积,提高了散热器的散热性能,且由于碳纳米管体积很小,从而使得所述散热器在具有较好的散热性能的同时具有较小的体积。
【附图说明】
图1是本发明的实施例提供的散热器结构剖面示意图;
图2是本发明的实施例提供的散热器的制造方法流程图;
图3是本发明的实施例提供的散热器的制造方法中提供的基板示意图;
图4是在图3中的基板上形成碳纳米管后的示意图;
图5是在图4中的多个碳纳米管一末端形成基底后的示意图;
图6是将图5中的多个碳纳米管去除基板后的示意图。
【具体实施方式】
下面结合附图对本发明作进一步详细说明。
请参阅图1,本发明的实施例提供的散热器10,其包括:一基底20,该基底20具有一第一表面21和一与所述第一表面21相对的第二表面22;多个碳纳米管30,所述多个碳纳米管30从基底20的第一表面21穿过所述第二表面22向外延伸。
所述基底20可选自一高分子材料,如硅橡胶、聚酯、聚氯乙烯、聚乙烯醇、聚乙烯、聚丙烯、环氧树脂、聚甲醛、聚缩醛等高分子材料中的一种或几种的混合。所述基底20的厚度不宜太厚,也不宜太薄,太厚不利于散热,太薄会降低其对碳纳米管30的固持力,导致碳纳米管30倾倒。优选地,所述基底20的厚度为0.1毫米~2毫米。
本实施例中,所述多个碳纳米管30可采用碳纳米管阵列,阵列中每个碳纳米管30分别从基底20的第一表面21穿过所述第二表面22向外延伸。优选地,所述多个碳纳米管30彼此平行且基本垂直于所述第一表面21,其底部和第一表面21基本平齐或伸出所述第一表面21。所述多个碳纳米管30的高度可根据所述基底20的厚度以及实际使用时的空间大小而定。优选地,所述碳纳米管30的高度为1毫米~5毫米。所述多个碳纳米管30也可为碳纳米管束阵列,每一碳纳米管束具有多个碳纳米管30,该碳纳米管束间的间距为0.1微米~1毫米。
请一并参阅图2至图6,本发明的实施例提供的上述散热器10的制备方法,其包括下述步骤:
步骤(1),提供一基板40,如图3所示。所述基板40的材料可选自玻璃、硅、金属及其氧化物。本实施例中基板40为硅基板。优选地,所述基板40的一用于后续形成碳纳米管的表面预先经过抛光处理。
步骤(2),在所述基板40上形成多个碳纳米管30,如图4所示。本实施例中在所述基板40上形成多个碳纳米管30的方法为化学气相沉积法。其步骤如下,首先于基板40上形成催化剂,然后于高温下通入碳源气以形成多个碳纳米管30。所述催化剂可采用铁、镍、钴、钯等过渡金属。所述碳源气可采用甲烷、乙烯、丙烯、乙炔、甲醇和乙醇等。本实施例中首先于基板40上覆盖一层5纳米厚的铁膜(图未示),并于空气中300℃条件下进行退火;然后在化学气相沉积腔体(Chemical Vapor Deposition Chamber)中在700℃条件下以乙烯为碳源气生长碳纳米管30。按上述方法获得的多个碳纳米管30彼此平行且基本垂直于所述基板40。优选地,所述多个碳纳米管30的高度为1毫米~5毫米,所述碳纳米管30的高度可通过控制反应时间来控制,本实施例中其高度为3毫米左右。本步骤中可通过在基板40上形成催化剂阵列来生长出碳纳米管束阵列,每一碳纳米管束的大小和形状可通过形成催化剂的区域的大小和形状来决定。
步骤(3),在所述多个碳纳米管30一末端形成一基底20,如图5所示。所述多个碳纳米管30包括一第一末端31和一第二末端32,所述第一末端31和基板40相连。所述基底20可形成于所述多个碳纳米管30任一末端上。其中,通过将高分子材料的熔融液或溶液注入多个碳纳米管30和基板40的连接处,可在多个碳纳米管30的第一末端31形成基底20。本实施例中在所述多个碳纳米管30的第二末端32上形成基底20,具体方法为将所述多个碳纳米管30的第二末端32浸入熔融态高分子材料中,取出后在室温下冷却固化,即在所述多个碳纳米管30的第二末端32上形成基底20。所述高分子材料可选自硅橡胶、聚酯、聚氯乙烯、聚乙烯醇、聚乙烯、聚丙烯、环氧树脂、聚甲醛、聚缩醛等中的一种或几种的混合。本实施例中使用聚乙烯醇。所述基底20的厚度可通过碳纳米管30的第二末端32浸入熔融态高分子材料中的深度决定,优选地,所述基底20的厚度为0.1毫米~2毫米,本实施例中其厚度为0.8毫米。
步骤(4),除去基板40,得到散热器10,如图6所示。所述除去基板40的方法有多种,如机械研磨、化学蚀刻等,本实施例中使用化学蚀刻的方法将基板40除去。
所述散热器包括一基底和多个碳纳米管,其中多个碳纳米管可做为散热器的散热鳍片,由于碳纳米管直径很小,一般为几纳米到几十纳米,使得单个碳纳米管散热鳍片具有极大的高径比,一般在10000∶1以上,大大增加了所述散热器的散热面积,提高了散热器的散热性能,且由于碳纳米管体积很小,从而使得所述散热器在具有较好的散热性能的同时具有较小的体积。
可以理解的是,对于本领域的普通技术人员来说,可以根据本发明的技术构思做出其它各种相应的改变与变形,而所有这些改变与变形都应属于本发明权利要求的保护范围。
Claims (11)
1.一种散热器,其包括:一由高分子材料制成的基底,所述基底具有一第一表面和一与所述第一表面相对的第二表面;和多个碳纳米管,所述多个碳纳米管从基底的第一表面穿过所述第二表面并向外延伸。
2.如权利要求1所述的散热器,其特征在于,所述高分子材料为硅橡胶、聚酯、聚氯乙烯、聚乙烯醇、聚乙烯、聚丙烯、环氧树脂、聚甲醛及聚缩醛中的一种或几种的混合。
3.如权利要求1所述的散热器,其特征在于,所述多个碳纳米管为一碳纳米管阵列。
4.如权利要求1所述的散热器,其特征在于,所述多个碳纳米管为一碳纳米管束阵列。
5.如权利要求1所述的散热器,其特征在于,所述多个碳纳米管彼此平行且基本垂直于所述第一表面。
6.如权利要求1所述的散热器,其特征在于,所述多个碳纳米管伸出所述第一表面。
7.如权利要求1所述的散热器,其特征在于,所述碳纳米管高度为1毫米~5毫米。
8.如权利要求1所述的散热器,其特征在于,所述基底的厚度为0.1毫米~2毫米。
9.一种散热器的制造方法,其包括以下步骤:
提供一基板;
在所述基板上形成多个碳纳米管;
在所述多个碳纳米管一末端形成一由高分子材料制成的基底;
除去所述基板。
10.如权利要求9所述的散热器的制造方法,其特征在于,在所述多个碳纳米管一末端形成基底的方法为将所述多个碳纳米管远离基板的末端浸入熔融态高分子材料中。
11.如权利要求9所述的散热器的制造方法,其特征在于,所述除去基板的方法为化学蚀刻或机械研磨。
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US11/309,531 US20070158584A1 (en) | 2005-11-11 | 2006-08-18 | Heat sink with carbon nanotubes and method for manufacturing the same |
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US8130007B2 (en) | 2006-10-16 | 2012-03-06 | Formfactor, Inc. | Probe card assembly with carbon nanotube probes having a spring mechanism therein |
US8354855B2 (en) * | 2006-10-16 | 2013-01-15 | Formfactor, Inc. | Carbon nanotube columns and methods of making and using carbon nanotube columns as probes |
US8149007B2 (en) * | 2007-10-13 | 2012-04-03 | Formfactor, Inc. | Carbon nanotube spring contact structures with mechanical and electrical components |
US8299605B2 (en) | 2007-11-14 | 2012-10-30 | International Business Machines Corporation | Carbon nanotube structures for enhancement of thermal dissipation from semiconductor modules |
KR100962369B1 (ko) * | 2008-06-26 | 2010-06-10 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
CN101626674B (zh) * | 2008-07-11 | 2015-07-01 | 清华大学 | 散热结构及其制备方法 |
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US20100252317A1 (en) * | 2009-04-03 | 2010-10-07 | Formfactor, Inc. | Carbon nanotube contact structures for use with semiconductor dies and other electronic devices |
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US20070235847A1 (en) * | 2005-09-19 | 2007-10-11 | Shriram Ramanathan | Method of making a substrate having thermally conductive structures and resulting devices |
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