CN1676568A - 一种热界面材料及其制造方法 - Google Patents

一种热界面材料及其制造方法 Download PDF

Info

Publication number
CN1676568A
CN1676568A CN200410026778.6A CN200410026778A CN1676568A CN 1676568 A CN1676568 A CN 1676568A CN 200410026778 A CN200410026778 A CN 200410026778A CN 1676568 A CN1676568 A CN 1676568A
Authority
CN
China
Prior art keywords
interfacial material
heat interfacial
heat
carbon nano
nano pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN200410026778.6A
Other languages
English (en)
Other versions
CN100383213C (zh
Inventor
黄华
刘长洪
范守善
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tsinghua University
Hongfujin Precision Industry Shenzhen Co Ltd
Original Assignee
Tsinghua University
Hongfujin Precision Industry Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsinghua University, Hongfujin Precision Industry Shenzhen Co Ltd filed Critical Tsinghua University
Priority to CNB2004100267786A priority Critical patent/CN100383213C/zh
Priority to US11/024,513 priority patent/US7253442B2/en
Publication of CN1676568A publication Critical patent/CN1676568A/zh
Priority to US11/592,767 priority patent/US7569425B2/en
Application granted granted Critical
Publication of CN100383213C publication Critical patent/CN100383213C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/712—Integrated with dissimilar structures on a common substrate formed from plural layers of nanosized material, e.g. stacked structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/735—Carbon buckyball
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y10S977/743—Carbon nanotubes, CNTs having specified tube end structure, e.g. close-ended shell or open-ended tube
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y10S977/848—Tube end modifications, e.g. capping, joining, splicing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
    • Y10S977/856—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure including etching/cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

一种热界面材料，其包括一高分子材料以及分布在该高分子材料中的多个碳纳米管，该热界面材料形成有一第一表面及相对于第一表面的第二表面，该碳纳米管两端开口，在该高分子材料中均匀分布并且沿热界面材料的第一表面向第二表面延伸。本发明还提供此种热界面材料的制造方法，其包括以下步骤：提供一碳纳米管阵列；将碳纳米管阵列浸润于液相高分子体系；使液相高分子体系转化为固相，生成分布有碳纳米管的高分子复合材料；在碳纳米管阵列预定高度，并沿垂直碳纳米管阵列轴向的方向切割该高分子复合材料，去除碳纳米管阵列顶端的高分子材料并使得碳纳米管尖端开口；按照预定厚度切割上述高分子复合材料，形成热界面材料。

Description

一种热界面材料及其制造方法
【技术领域】
本发明涉及一种热界面材料及其制造方法，尤其涉及一种利用碳纳米管导热的热界面材料及其制造方法。
【背景技术】
近年来，随着半导体器件集成工艺的快速发展，半导体器件的集成化程度越来越高，而器件体积却变得越来越小，其散热成为一个越来越重要的问题，其对散热的要求也越来越高。为了满足这些需要，各种散热方式被大量的运用，如利用风扇散热、水冷辅助散热和热管散热等方式，并取得一定的散热效果，但由于散热器与半导体集成器件的接触界面并不平整，一般相互接触的只有不到2％面积，没有理想的接触界面，，从根本上极大地影响了半导体器件向散热器进行热传递的效果，因此在散热器与半导体器件的接触界面间增加一导热系数较高的热界面材料来增加界面的接触程度就显得十分必要。
传统的热界面材料是将一些导热系数较高的颗粒分散到聚合物材料中形成复合材料，如石墨、氮化硼、氧化硅、氧化铝、银或其它金属等。此种材料的导热性能在很大程度上取决于聚合物载体的性质。其中以油脂、相变材料为载体的复合材料因其使用时为液态而能与热源表面浸润故接触热阻较小，而以硅胶和橡胶为载体的复合材料的接触热阻就比较大。这些材料的一个普遍缺陷是整个材料的导热系数比较小，典型值在1W/mK，这已经越来越不能适应半导体集成化程度的提高对散热的需求，而增加聚合物载体中导热颗粒的含量使颗粒与颗粒尽量相互接触可以增加整个复合材料的导热系数，如某些特殊的界面材料因此可达到4-8W/mK，但当聚合物载体中导热颗粒的含量增加到一定程度时，会使聚合物失去所需的性能，如油脂会变硬，从而浸润效果会变差，橡胶也会变硬，从而失去柔韧性，这都会使热界面材料性能大大降低。
近来有一种新的热界面材料，是将定向排列的导热系数约为1100W/mK的碳纤维一端或整个用聚合物固定在一起，从而在聚合物薄膜的垂直方向上形成定向排列的碳纤维阵列，这样每根碳纤维就可以形成一个导热通道，极大提高了这种聚合物薄膜的导热系数，可达到50-90W/mK。但这类材料的一个缺点是不能做得很薄，厚度必须在40微米以上，而材料的热阻与薄膜的厚度成正比，所以，它的热阻降低到一定的程度就难以再进一步降低。
为改善热界面材料的性能，提高其热传导系数，各种材料被广泛的试验。Savas Berber等人于2000年在美国物理学会上发表的一篇名为“UnusuallyHigh Thermal Conductivity of Carbon Nanotubes”的文章指出“Z”形(10，10)碳纳米管在室温下导热系数可达6600W/mK，具体内容可参阅文献Phys.Rev.Lett，vol.84，p.4613。研究如何将碳纳米管用于热界面材料并充分发挥其优良的导热性成为提高热界面材料性能的一个重要方向。
美国专利第6,407,922号揭示一种利用碳纳米管导热特性的热界面材料，其是将碳纳米管掺到基体材料中结成一体，然后通过模压方式制成热界面材料，该热界面材料的两导热表面的面积不相等，其中与散热器接触的导热表面的面积大于与热源接触的导热表面的面积，这样可有利于散热器散热，但该方法制成的热界面材料尚有以下不足，其一，模压方式制成热界面材料较难把厚度做薄，因而，一方面导致该热界面材料导热系数的降低，另一方面，增加该热界面材料的体积，不利于器件向小型化方向发展的需要，且使得热界面材料缺乏柔韧性；其二，该方法制成的热界面材料，碳纳米管杂乱无序的排列在基体材料中，其在基体材料中分布的均匀性较难得到保证，因而热传导的均匀性也受到影响，而且没有充分利用碳纳米管纵向导热的优势，影响了热界面材料的热传导系数。
因此，提供一种厚度薄、导热系数大，接触热阻小，柔韧性好，导热均匀的热界面材料十分必要。
【发明内容】
为解决现有技术的技术问题，本发明的目的是提供一种厚度薄、导热系数大，接触热阻小，柔韧性好，导热均匀的热界面材料。
本发明的另一目的是提供此种热界面材料的制造方法。
为实现本发明的目的，本发明提供一种热界面材料，其包括一高分子材料以及分布于该高分子材料中的多个碳纳米管，该热界面材料形成有一第一表面及相对于第一表面的第二表面，该碳纳米管两端开口，在该高分子材料中均匀分布且沿热界面材料的第一表面向第二表面延伸。
其中，在该热界面材料中，该碳纳米管基本相互平行且垂直于热界面材料的第一表面和第二表面。
为实现本发明的另一目的，本发明还提供此种热界面材料的制造方法，其包括以下步骤：
提供一碳纳米管阵列；
将碳纳米管阵列浸润于液相高分子体系；
使液相高分子体系转化为固相，生成分布有碳纳米管的高分子复合材料；
在碳纳米管阵列预定高度，并沿垂直碳纳米管阵列的轴向方向切割该高分子复合材料，去除碳纳米管阵列顶端的高分子材料并使得碳纳米管尖端开口；
按照预定厚度切割上述高分子复合材料，形成热界面材料。
与现有技术相比较，本发明基于碳纳米管阵列导热的热界面材料具以下优点：其一，利用碳纳米管阵列制得的热界面材料，因碳纳米管阵列具有均匀、超顺、定向排列的优点，该热界面材料的每一根碳纳米管均在垂直热界面材料方向形成导热通道，使得碳纳米管的纵向导热特性得到最大限度的利用，因而可得到导热系数高且导热一致均匀的热界面材料；其二，利用本方法制得的热界面材料，不受碳纳米管阵列的生长高度的限制，可通过切割的方法制得厚度极薄的热界面材料，一方面增加了热界面材料的导热效果，另一方面，增加了热界面材料的柔韧性，降低了热界面材料的体积及重量，利于整个器件安装向小型化方向发展的需要；其三，本发明分布在热界面材料中的碳纳米管皆两端开口，在热界面材料内从一表面延伸至相对的另一表面，可直接与热源以及散热装置接触，而且，热界面材料表面平整，与热源及散热装置接触热阻小，有利于更好的发挥碳纳米管的导热特性。
【附图说明】
图1是本发明中形成有催化剂薄膜的基底的示意图。
图2是图1所示基底上生长有定向排列的碳纳米管阵列的示意图。
图3是图2所示的碳纳米管阵列连同基底在高分子溶液中浸泡的示意图。
图4是本发明中浸有高分子溶液的碳纳米管阵列的固化的示意图。
图5是本发明中含碳纳米管阵列的热界面材料示意图。
图6是本发明热界面材料的应用示意图。
【具体实施方式】
下面将结合附图及具体实施例对本发明进行详细说明。
请参阅图1和图2，首先在一基底11上均匀形成一层催化剂薄膜12，该催化剂薄膜12的形成可利用热沉积、电子束沉积或溅射法来完成。基底11的材料可用玻璃、石英、硅或氧化铝。本实施例采用多孔硅，其表面有一层多孔层，孔的直径极小，一般小于3纳米。催化剂薄膜12的材料选用铁，也可选用其它材料，如氮化镓、钴、镍及其合金材料等。
然后，氧化催化剂薄膜12，形成催化剂颗粒(图未示)，再将分布有催化剂颗粒的基底11放入反应炉中(图未示)，在700～1000摄氏度下，通入碳源气，生长出碳纳米管阵列，其中碳源气可为乙炔、乙烯等气体，碳纳米管阵列的高度可通过控制生长时间来控制。有关碳纳米管阵列22生长的方法已较为成熟，具体可参阅文献Science，1999，vol.283，p.512-414和文献J.Am.Chem.Soc，2001，vol.123，p.11502-11503，此外美国专利第6,350,488号也公开了一种生长大面积碳纳米管阵列的方法。
请参阅图3，将高分子溶液32装进一容器30中，将已生长好的定向排列的碳纳米管阵列22连同基底11一起浸到该高分子溶液32中，直至高分子溶液32完全浸润碳纳米管阵列22，高分子溶液32完全浸润的时间同碳纳米管阵列22的高度、密度以及整个碳纳米管阵列22的面积相关。为使高分子溶液32能完全浸润碳纳米管阵列22，该高分子溶液32的粘度在200cPs以下。本发明高分子溶液32的高分子材料选自树脂、硅橡胶或橡胶。本发明高分子溶液32为液相高分子体系，该高分子溶液32还可用熔融态高分子或聚合物单体溶液替代，本实施例采用的高分子溶液32为硅橡胶高分子溶液。
请参阅图4和图5，将被高分子溶液32完全浸润的碳纳米管阵列22连同基底11一起从容器30中取出，固化使该液相高分子溶液32转化为固相，形成高分子材料34。然后将固化后的高分子材料34从基底11上揭下，在碳纳米管阵列22预定高度，用切片机(图未示)将该高分子材料34沿垂直于碳纳米管阵列22的轴向方向进行切割，形成热界面材料40。
本发明的热界面材料40的制造方法中也可以先固化该高分子溶液32并使其转化为固相高分子材料34，再将固化后的高分子材料34连同基底11一起从容器30中取出，然后可以在已经形成高分子材料34的基底11上，用切片机直接切割该高分子材料34形成热界面材料40。
本发明液相高分子溶液转化为固相高分子材料的方法需依据所选用的高分子材料。本实施例硅橡胶高分子溶液的固化由于选用的硅橡胶高分子溶液为两组份硅橡胶高分子溶液，所以只需要将该两组份硅橡胶高分子溶液在室温固化24小时或在60℃固化2小时，其自身的反应即可使该硅橡胶高分子溶液转化为固相。本实施例中的两组份硅橡胶高分子溶液可以由市场上直接买到。
本发明用切片机切割高分子材料34形成热界面材料40的具体方法为：首先根据碳纳米管阵列22的生长高度将分布有碳纳米管阵列22的高分子材料34沿垂直于碳纳米管阵列22轴向方向进行切割，除去碳纳米管阵列22上方多余的高分子材料34，同时使碳纳米管的尖端开口；然后按照热界面材料40的所需厚度沿同一方向进行切割，即得到所需的热界面材料40，该热界面材料40中的碳纳米管两端开口，在应用时能够与热源或散热装置直接接触，避免因为过量的高分子材料介于碳纳米管与热源或散热器之间影响热界面材料40的热传导性能。本发明热界面材料40的厚度可为1～1000微米，本实施例热界面材料40的厚度为20微米，由于使用切片机进行切割，热界面材料40的厚度可根据需求由切片时直接控制，方法简单，且容易控制。
另外，为使切割后得到的热界面材料表面更加平整，可将已经固化的高分子材料34浸入熔融态石蜡材料中，经过冷却固化后再进行切割，由于冷却后的石蜡具有较高硬度，所以，切割后得到的热界面材料的表面会更加平整。
本发明的热界面材料40，碳纳米管阵列22经高分子材料34固结形成一体，使得碳纳米管阵列22在高分子材料34中具有分布均匀、垂直排列的特点，在垂直薄膜方向形成导热通道，所形成的热界面材料40具有导热系数高、导热均匀的特点。
利用本方法制得的热界面材料40中原碳纳米管阵列22的形态基本未变，即碳纳米管阵列22的中碳纳米管的间距未变，且碳纳米管阵列22没有聚集成束，保持了原有的定向排列的状态，并且此热界面材料40具有良好柔韧性。
请参阅图6，本发明制得的碳纳米管阵列热界面材料40具有极佳的导热性能，可广泛的应用于包括中央处理器(CPU)、功率晶体管、视频图形阵列芯片(VGA)、射频芯片在内的电子器件80中，热界面材料40置于电子器件80与散热器60之间，能提供电子器件80与散热器60之间一优良热接触热界面材料40的第一表面42与电子器件80的表面(未标示)接触，与第一表面42相对应的热界面材料40的第二表面44与散热器60的底面(未标示)接触。由于本发明制得的碳纳米管阵列热界面材料40极薄，其厚度仅在微米级，具有较好的柔韧性，因而，即使在电子器件的表面参差不齐的情况下，本发明的热界面材料也能提供电子器件80与散热器60之间一良好的热接触。另外，由于本发明热界面材料40中的碳纳米管皆两端开口，沿热界面材料40的第一表面42向第二表面44垂直延伸，因而，碳纳米管可与电子器件80及散热器60直接接触，而且，热界面材料40的表面平整，与电子器件80及散热器60接触热阻小，使得碳纳米管的纵向导热特性得到最大限度的利用，热界面材料40具有导热系数高且导热一致均匀的特点。

Claims (10)

1.一种热界面材料，其包括一高分子材料以及分布于该高分子材料中的多个碳纳米管，该热界面材料形成有一第一表面及相对于第一表面的第二表面，其特征在于：该碳纳米管两端开口，在该高分子材料中均匀分布且沿热界面材料的第一表面向第二表面延伸。
2.如权利要求1所述的热界面材料，其特征在于该碳纳米管基本相互平行且垂直于热界面材料的第一表面和第二表面。
3.如权利要求1所述的热界面材料，其特征在于该热界面材料的厚度为1～1000微米。
4.一种热界面材料的制造方法，其包括以下步骤：
提供一碳纳米管阵列；
将碳纳米管阵列浸润于液相高分子体系；
使液相高分子体系转化为固相，生成分布有碳纳米管的高分子复合材料；
在碳纳米管阵列预定高度，并沿垂直于碳纳米管阵列轴向切割该高分子复合材料，去除碳纳米管阵列顶端的高分子材料并使得碳纳米管尖端开口；
按照预定厚度切割上述高分子复合材料，形成热界面材料。
5.如权利要求4所述的热界面材料的制造方法，其特征在于切割该高分子复合材料以前进一步包括以下步骤：
用熔融态石蜡材料浸润分布有碳纳米管的高分子复合材料；
冷却固化该熔融态石蜡材料。
6.如权利要求4所述的热界面材料的制造方法，其特征在于液相高分子体系粘度在200cPs以下。
7.如权利要求4所述的热界面材料的制造方法，其特征在于该液相高分子体系包括熔融态高分子、高分子溶液和聚合物单体溶液。
8.如权利要求7所述的热界面材料的制造方法，其特征在于该高分子溶液包括树脂、硅橡胶和橡胶。
9.如权利要求4所述的热界面材料的制造方法，其特征在于该碳纳米管阵列生长在一基底上。
10.如权利要求9所述的热界面材料的制造方法，其特征在于切割该高分子复合材料以前进一步包括先将该分布有碳纳米管的高分子复合材料从基底上揭下。
CNB2004100267786A 2004-04-02 2004-04-02 一种热界面材料及其制造方法 Expired - Lifetime CN100383213C (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CNB2004100267786A CN100383213C (zh) 2004-04-02 2004-04-02 一种热界面材料及其制造方法
US11/024,513 US7253442B2 (en) 2004-04-02 2004-12-29 Thermal interface material with carbon nanotubes
US11/592,767 US7569425B2 (en) 2004-04-02 2006-11-03 Method for manufacturing thermal interface material with carbon nanotubes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2004100267786A CN100383213C (zh) 2004-04-02 2004-04-02 一种热界面材料及其制造方法

Publications (2)

Publication Number Publication Date
CN1676568A true CN1676568A (zh) 2005-10-05
CN100383213C CN100383213C (zh) 2008-04-23

Family

ID=34800348

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100267786A Expired - Lifetime CN100383213C (zh) 2004-04-02 2004-04-02 一种热界面材料及其制造方法

Country Status (2)

Country Link
US (2) US7253442B2 (zh)
CN (1) CN100383213C (zh)

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100345472C (zh) * 2004-04-10 2007-10-24 清华大学 一种热界面材料及其制造方法
US7543960B2 (en) 2006-12-15 2009-06-09 Foxconn Technology Co., Ltd. Light-emitting diode assembly
CN101054467B (zh) * 2006-04-14 2010-05-26 清华大学 碳纳米管复合材料及其制备方法
CN101787264A (zh) * 2010-03-06 2010-07-28 东莞市万丰纳米材料有限公司 一种高导热材料及其制备方法和装置
CN1964028B (zh) * 2005-11-11 2010-08-18 鸿富锦精密工业（深圳）有限公司 散热器
CN101058721B (zh) * 2006-04-21 2010-09-29 清华大学 热界面材料制备方法
CN101372614B (zh) * 2007-08-24 2011-06-08 清华大学 碳纳米管阵列复合导热片及其制备方法
CN101343532B (zh) * 2007-07-13 2011-06-08 清华大学 碳纳米管复合热界面材料的制备方法
CN101058720B (zh) * 2006-04-21 2011-08-24 清华大学 热界面材料
US8084532B2 (en) 2006-01-19 2011-12-27 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
US8084097B2 (en) 2006-02-20 2011-12-27 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
US8088449B2 (en) 2005-02-16 2012-01-03 Dow Corning Toray Co., Ltd. Reinforced silicone resin film and method of preparing same
US8092910B2 (en) 2005-02-16 2012-01-10 Dow Corning Toray Co., Ltd. Reinforced silicone resin film and method of preparing same
CN101796648B (zh) * 2007-08-28 2012-05-30 加利福尼亚技术学院 用于生长垂直排列的线阵列的晶片的再利用方法
CN101360387B (zh) * 2007-08-03 2012-06-13 富葵精密组件(深圳)有限公司 柔性电路板基膜、柔性电路板基板及柔性电路板
US8273448B2 (en) 2007-02-22 2012-09-25 Dow Corning Corporation Reinforced silicone resin films
US8283025B2 (en) 2007-02-22 2012-10-09 Dow Corning Corporation Reinforced silicone resin films
CN101627096B (zh) * 2007-02-22 2012-11-07 道康宁公司 增强硅树脂膜及其制备方法
US8334022B2 (en) 2005-08-04 2012-12-18 Dow Corning Corporation Reinforced silicone resin film and method of preparing same
US8912268B2 (en) 2005-12-21 2014-12-16 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
CN104810335A (zh) * 2014-01-23 2015-07-29 新光电气工业株式会社 碳纳米管片以及半导体装置、碳纳米管片的制造方法以及半导体装置的制造方法
US9263612B2 (en) 2010-03-23 2016-02-16 California Institute Of Technology Heterojunction wire array solar cells
TWI564980B (zh) * 2007-09-12 2017-01-01 斯莫勒科技公司 以奈米結構連接和結合相鄰層
US9553223B2 (en) 2013-01-24 2017-01-24 California Institute Of Technology Method for alignment of microwires
US9947816B2 (en) 2012-04-03 2018-04-17 California Institute Of Technology Semiconductor structures for fuel generation
CN108559277A (zh) * 2018-05-15 2018-09-21 熊振 一种碳纳米管增强的生物高分子材料及其制备方法
US10090425B2 (en) 2012-02-21 2018-10-02 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
CN111092043A (zh) * 2018-10-24 2020-05-01 应用材料公司 用于沉积腔室的基板支撑件设计
CN112235999A (zh) * 2020-09-11 2021-01-15 深圳烯湾科技有限公司 碳纳米管导热片的制备方法
CN112358855A (zh) * 2020-10-26 2021-02-12 深圳烯湾科技有限公司 碳纳米管导热片及其制备方法
CN114133918A (zh) * 2015-12-28 2022-03-04 日立造船株式会社 碳纳米管复合材料以及碳纳米管复合材料的制造方法
CN114433261A (zh) * 2022-01-25 2022-05-06 大连海事大学 一种基于碳纳米管通道的纳流控芯片加工方法

Families Citing this family (140)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
US7656027B2 (en) * 2003-01-24 2010-02-02 Nanoconduction, Inc. In-chip structures and methods for removing heat from integrated circuits
US7273095B2 (en) * 2003-03-11 2007-09-25 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Nanoengineered thermal materials based on carbon nanotube array composites
DE10327530A1 (de) * 2003-06-17 2005-01-20 Electrovac Gesmbh Vorrichtung mit wenigstens einer von einem zu kühlenden Funktionselement gebildeten Wärmequelle, mit wenigstens einer Wärmesenke und mit wenigstens einer Zwischenlage aus einer thermischen leitenden Masse zwischen der Wärmequelle und der Wärmesenke sowie thermische leitende Masse, insbesondere zur Verwendung bei einer solchen Vorrichtung
US7109581B2 (en) * 2003-08-25 2006-09-19 Nanoconduction, Inc. System and method using self-assembled nano structures in the design and fabrication of an integrated circuit micro-cooler
US8048688B2 (en) * 2006-10-24 2011-11-01 Samsung Electronics Co., Ltd. Method and apparatus for evaluation and improvement of mechanical and thermal properties of CNT/CNF arrays
US20070114658A1 (en) * 2004-08-24 2007-05-24 Carlos Dangelo Integrated Circuit Micro-Cooler with Double-Sided Tubes of a CNT Array
US7477527B2 (en) * 2005-03-21 2009-01-13 Nanoconduction, Inc. Apparatus for attaching a cooling structure to an integrated circuit
US7732918B2 (en) * 2003-08-25 2010-06-08 Nanoconduction, Inc. Vapor chamber heat sink having a carbon nanotube fluid interface
US7538422B2 (en) 2003-08-25 2009-05-26 Nanoconduction Inc. Integrated circuit micro-cooler having multi-layers of tubes of a CNT array
CN1290764C (zh) * 2004-05-13 2006-12-20 清华大学 一种大量制造均一长度碳纳米管的方法
US7758572B2 (en) * 2004-05-20 2010-07-20 Boston Scientific Scimed, Inc. Medical devices and methods including cooling balloons having nanotubes
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
KR101429098B1 (ko) 2004-06-04 2014-09-22 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치
TWI388042B (zh) * 2004-11-04 2013-03-01 Taiwan Semiconductor Mfg 基於奈米管基板之積體電路
TWI463615B (zh) * 2004-11-04 2014-12-01 Taiwan Semiconductor Mfg Co Ltd 以奈米管為基礎之具方向性導電黏著
TW200633171A (en) * 2004-11-04 2006-09-16 Koninkl Philips Electronics Nv Nanotube-based fluid interface material and approach
CN100543103C (zh) * 2005-03-19 2009-09-23 清华大学 热界面材料及其制备方法
CN100337981C (zh) * 2005-03-24 2007-09-19 清华大学 热界面材料及其制造方法
US9771264B2 (en) * 2005-10-25 2017-09-26 Massachusetts Institute Of Technology Controlled-orientation films and nanocomposites including nanotubes or other nanostructures
JP5178532B2 (ja) * 2006-02-02 2013-04-10 ダウ・コーニング・コーポレイション シリコーン樹脂フィルム、その調製方法、およびナノ材料充填シリコーン組成物
US7494910B2 (en) * 2006-03-06 2009-02-24 Micron Technology, Inc. Methods of forming semiconductor package
EP2441884A1 (en) 2006-05-19 2012-04-18 Massachusetts Institute Of Technology Nanostructure-reinforced composite articles and methods
US8337979B2 (en) 2006-05-19 2012-12-25 Massachusetts Institute Of Technology Nanostructure-reinforced composite articles and methods
US8846143B2 (en) 2006-07-10 2014-09-30 California Institute Of Technology Method for selectively anchoring and exposing large numbers of nanoscale structures
US7955644B2 (en) * 2006-07-10 2011-06-07 California Institute Of Technology Method for selectively anchoring large numbers of nanoscale structures
US20080026505A1 (en) * 2006-07-28 2008-01-31 Nirupama Chakrapani Electronic packages with roughened wetting and non-wetting zones
CN101121791B (zh) * 2006-08-09 2010-12-08 清华大学 碳纳米管/聚合物复合材料的制备方法
CN100591613C (zh) * 2006-08-11 2010-02-24 清华大学 碳纳米管复合材料及其制造方法
GB0617459D0 (en) * 2006-09-05 2006-10-18 Airbus Uk Ltd Method of manufacturing composite material
WO2008029178A1 (en) 2006-09-05 2008-03-13 Airbus Uk Limited Method of manufacturing composite material by growing of layers of reinforcement and related apparatus
GB0617460D0 (en) * 2006-09-05 2006-10-18 Airbus Uk Ltd Method of manufacturing composite material
US20080067502A1 (en) * 2006-09-14 2008-03-20 Nirupama Chakrapani Electronic packages with fine particle wetting and non-wetting zones
KR20090045364A (ko) * 2006-09-22 2009-05-07 인터내셔널 비지네스 머신즈 코포레이션 열 인터페이스 구조와 그 제조 방법
WO2008049015A2 (en) * 2006-10-17 2008-04-24 Purdue Research Foundation Electrothermal interface material enhancer
US8951631B2 (en) 2007-01-03 2015-02-10 Applied Nanostructured Solutions, Llc CNT-infused metal fiber materials and process therefor
US9005755B2 (en) 2007-01-03 2015-04-14 Applied Nanostructured Solutions, Llc CNS-infused carbon nanomaterials and process therefor
US8158217B2 (en) 2007-01-03 2012-04-17 Applied Nanostructured Solutions, Llc CNT-infused fiber and method therefor
US8951632B2 (en) 2007-01-03 2015-02-10 Applied Nanostructured Solutions, Llc CNT-infused carbon fiber materials and process therefor
WO2008143635A1 (en) 2007-01-17 2008-11-27 The Board Of Trustees Of The University Of Illinois Optical systems fabricated by printing-based assembly
JP2010518226A (ja) * 2007-02-06 2010-05-27 ダウ・コーニング・コーポレイション シリコーン樹脂、シリコーン組成物、被覆基材、および補強シリコーン樹脂フィルム
DE102007006175A1 (de) * 2007-02-07 2008-08-14 Osram Opto Semiconductors Gmbh Wärmeleitfähige Schicht und Verfahren zur Herstellung einer wärmeleitfähigen Schicht
ATE474876T1 (de) * 2007-02-22 2010-08-15 Dow Corning Verfahren zur herstellung leitfähiger folien sowie in diesem verfahren hergestellte artikel
CN101275060B (zh) * 2007-03-30 2012-06-20 清华大学 导电胶带及其制造方法
US20100129625A1 (en) * 2007-05-01 2010-05-27 Bizhong Zhu Reinforced Silicone Resin Film
KR20100017500A (ko) * 2007-05-01 2010-02-16 다우 코닝 코포레이션 나노물질-충전된 실리콘 조성물 및 강화 실리콘 수지 필름
CN101323759B (zh) * 2007-06-15 2014-10-08 清华大学 导电胶带及其制造方法
US7959969B2 (en) 2007-07-10 2011-06-14 California Institute Of Technology Fabrication of anchored carbon nanotube array devices for integrated light collection and energy conversion
CN101779271B (zh) * 2007-07-19 2013-05-22 加利福尼亚技术学院 垂直排列的硅线阵列的结构及其形成方法
KR20100044854A (ko) * 2007-07-19 2010-04-30 캘리포니아 인스티튜트 오브 테크놀로지 반도체의 정렬된 어레이의 구조
CN101353785B (zh) * 2007-07-25 2010-09-29 清华大学 高密度碳纳米管阵列复合材料的制备方法
GB0715990D0 (en) * 2007-08-16 2007-09-26 Airbus Uk Ltd Method and apparatus for manufacturing a component from a composite material
CN101848960A (zh) * 2007-10-12 2010-09-29 陶氏康宁公司 强化的硅酮树脂膜和纳米纤维填充的硅酮组合物
US8919428B2 (en) 2007-10-17 2014-12-30 Purdue Research Foundation Methods for attaching carbon nanotubes to a carbon substrate
US8262835B2 (en) * 2007-12-19 2012-09-11 Purdue Research Foundation Method of bonding carbon nanotubes
US7479590B1 (en) * 2008-01-03 2009-01-20 International Business Machines Corporation Dry adhesives, methods of manufacture thereof and articles comprising the same
JP5743553B2 (ja) 2008-03-05 2015-07-01 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 伸張可能及び折畳み可能な電子デバイス
US8470701B2 (en) * 2008-04-03 2013-06-25 Advanced Diamond Technologies, Inc. Printable, flexible and stretchable diamond for thermal management
US7808099B2 (en) * 2008-05-06 2010-10-05 International Business Machines Corporation Liquid thermal interface having mixture of linearly structured polymer doped crosslinked networks and related method
CN101626674B (zh) * 2008-07-11 2015-07-01 清华大学 散热结构及其制备方法
CN101671442A (zh) * 2008-09-12 2010-03-17 清华大学 碳纳米管阵列复合材料的制备方法
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
JP5646492B2 (ja) 2008-10-07 2014-12-24 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． 伸縮可能な集積回路およびセンサアレイを有する装置
CN101768427B (zh) * 2009-01-07 2012-06-20 清华大学 热界面材料及其制备方法
CN102292114A (zh) 2009-01-27 2011-12-21 加州理工学院 通过具有从装置表面突出的排列的碳纳米管的纳米增强的装置促进的药物递送和物质传递
EP2398955B8 (en) 2009-02-17 2020-06-03 Applied NanoStructured Solutions, LLC Composites comprising carbon nanotubes on fiber
AU2010257117A1 (en) 2009-02-27 2011-08-11 Applied Nanostructured Solutions Llc Low temperature CNT growth using gas-preheat method
CN101826467B (zh) * 2009-03-02 2012-01-25 清华大学 热界面材料的制备方法
US20100224129A1 (en) 2009-03-03 2010-09-09 Lockheed Martin Corporation System and method for surface treatment and barrier coating of fibers for in situ cnt growth
US9111658B2 (en) 2009-04-24 2015-08-18 Applied Nanostructured Solutions, Llc CNS-shielded wires
CA2758570A1 (en) 2009-04-24 2010-12-16 Applied Nanostructured Solutions, Llc Cnt-based signature control material
CN102460447A (zh) 2009-04-27 2012-05-16 应用纳米结构方案公司 防止或除去复合结构结冰的基于cnt的电阻加热
US8865489B2 (en) 2009-05-12 2014-10-21 The Board Of Trustees Of The University Of Illinois Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
JP5823393B2 (ja) 2009-08-03 2015-11-25 アプライド ナノストラクチャード ソリューションズ リミテッド ライアビリティー カンパニーＡｐｐｌｉｅｄ Ｎａｎｏｓｔｒｕｃｔｕｒｅｄｓｏｌｕｔｉｏｎｓ， Ｌｌｃ 複合繊維へのナノ粒子の組み込み
CN101989583B (zh) * 2009-08-05 2013-04-24 清华大学 散热结构及使用该散热结构的散热系统
CN101996890B (zh) * 2009-08-25 2012-06-20 清华大学 碳纳米管散热器的制备装置及方法
US9469790B2 (en) 2009-09-29 2016-10-18 The Boeing Company Adhesive compositions comprising electrically insulating-coated carbon-based particles and methods for their use and preparation
US8709538B1 (en) 2009-09-29 2014-04-29 The Boeing Company Substantially aligned boron nitride nano-element arrays and methods for their use and preparation
WO2011041727A1 (en) 2009-10-01 2011-04-07 Mc10, Inc. Protective cases with integrated electronics
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
BR112012010907A2 (pt) 2009-11-23 2019-09-24 Applied Nanostructured Sols "materiais compósitos de cerâmica contendo materiais de fibra infundidos em nanotubo de carbono e métodos para a produção dos mesmos"
EP2504226A4 (en) 2009-11-23 2014-10-15 Applied Nanostructured Sols AIR CARRIED COMPOSITE STRUCTURES ADAPTED TO CARBON NANOTUBES
US8808933B2 (en) * 2009-11-30 2014-08-19 California Institute Of Technology Semiconductor wire array structures, and solar cells and photodetectors based on such structures
AU2010353294B2 (en) 2009-12-14 2015-01-29 Applied Nanostructured Solutions, Llc Flame-resistant composite materials and articles containing carbon nanotube-infused fiber materials
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
EP2513953B1 (en) 2009-12-16 2017-10-18 The Board of Trustees of the University of Illionis Electrophysiology using conformal electronics
US9167736B2 (en) 2010-01-15 2015-10-20 Applied Nanostructured Solutions, Llc CNT-infused fiber as a self shielding wire for enhanced power transmission line
WO2011146151A2 (en) 2010-02-02 2011-11-24 Applied Nanostructured Solutions, Llc Fiber containing parallel-aligned carbon nanotubes
AU2011223738B2 (en) 2010-03-02 2015-01-22 Applied Nanostructured Solutions, Llc Spiral wound electrical devices containing carbon nanotube-infused electrode materials and methods and apparatuses for production thereof
CA2789664A1 (en) 2010-03-02 2011-09-09 Applied Nanostructured Solutions, Llc Electrical devices containing carbon nanotube-infused fibers and methods for production thereof
EP2547258B1 (en) 2010-03-17 2015-08-05 The Board of Trustees of the University of Illionis Implantable biomedical devices on bioresorbable substrates
US10240772B2 (en) * 2010-04-02 2019-03-26 GE Lighting Solutions, LLC Lightweight heat sinks and LED lamps employing same
US8668356B2 (en) * 2010-04-02 2014-03-11 GE Lighting Solutions, LLC Lightweight heat sinks and LED lamps employing same
JP2013524439A (ja) * 2010-04-02 2013-06-17 ジーイー ライティング ソリューションズ エルエルシー 軽量ヒートシンク及びそれを使用するｌｅｄランプ
WO2011127207A2 (en) 2010-04-07 2011-10-13 California Institute Of Technology Simple method for producing superhydrophobic carbon nanotube array
US8780526B2 (en) 2010-06-15 2014-07-15 Applied Nanostructured Solutions, Llc Electrical devices containing carbon nanotube-infused fibers and methods for production thereof
CN101880035A (zh) 2010-06-29 2010-11-10 清华大学 碳纳米管结构
US9017854B2 (en) 2010-08-30 2015-04-28 Applied Nanostructured Solutions, Llc Structural energy storage assemblies and methods for production thereof
WO2012037042A1 (en) 2010-09-14 2012-03-22 Applied Nanostructured Solutions, Llc Glass substrates having carbon nanotubes grown thereon and methods for production thereof
AU2011305809A1 (en) 2010-09-22 2013-02-28 Applied Nanostructured Solutions, Llc Carbon fiber substrates having carbon nanotubes grown thereon and processes for production thereof
EP2629595A2 (en) 2010-09-23 2013-08-21 Applied NanoStructured Solutions, LLC CNT-infused fiber as a self shielding wire for enhanced power transmission line
WO2012079066A2 (en) 2010-12-10 2012-06-14 California Institute Of Technology Method for producing graphene oxide with tunable gap
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
FR2973038B1 (fr) 2011-03-21 2015-01-02 Thales Sa Interface thermique a base de materiau a faible resistance thermique et procede de fabrication
WO2012135238A1 (en) 2011-03-29 2012-10-04 California Institute Of Technology Method to increase the capacitance of electrochemical carbon nanotube capacitors by conformal deposition of nanoparticles
JP5618886B2 (ja) * 2011-03-31 2014-11-05 株式会社日立製作所 ネットワークシステムおよび計算機振り分け装置、計算機振り分け方法
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing
WO2012166686A2 (en) 2011-05-27 2012-12-06 Mc10, Inc. Electronic, optical and/or mechanical apparatus and systems and methods for fabricating same
WO2012167096A2 (en) 2011-06-03 2012-12-06 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
KR101979354B1 (ko) 2011-12-01 2019-08-29 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 프로그램 변형을 실행하도록 설계된 과도 장치
US8764681B2 (en) 2011-12-14 2014-07-01 California Institute Of Technology Sharp tip carbon nanotube microneedle devices and their fabrication
WO2013106793A1 (en) 2012-01-13 2013-07-18 California Institute Of Technology Solar fuel generators
US10026560B2 (en) 2012-01-13 2018-07-17 The California Institute Of Technology Solar fuels generator
US9476129B2 (en) 2012-04-02 2016-10-25 California Institute Of Technology Solar fuels generator
US9085464B2 (en) 2012-03-07 2015-07-21 Applied Nanostructured Solutions, Llc Resistance measurement system and method of using the same
CN105283122B (zh) 2012-03-30 2020-02-18 伊利诺伊大学评议会 可共形于表面的可安装于附肢的电子器件
CN102634212B (zh) * 2012-04-23 2015-11-25 湖州明朔光电科技有限公司 一种导热硅脂组合物
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
WO2014022314A1 (en) 2012-07-30 2014-02-06 California Institute Of Technology Nano tri-carbon composite systems and manufacture
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
EP2961535B1 (en) 2013-02-28 2018-01-17 N12 Technologies, Inc. Cartridge-based dispensing of nanostructure films
US9269603B2 (en) * 2013-05-09 2016-02-23 Globalfoundries Inc. Temporary liquid thermal interface material for surface tension adhesion and thermal control
US20160340482A1 (en) * 2014-02-04 2016-11-24 N12 Technologies, Inc. Articles and Methods for Manufacture of Nanostructure Reinforced Composites
US20160106004A1 (en) * 2014-10-13 2016-04-14 Ntherma Corporation Carbon nanotubes disposed on metal substrates with one or more cavities
WO2016061006A2 (en) * 2014-10-13 2016-04-21 Ntherma Corporation Carbon nanotubes as a thermal interface material
EP3304430A4 (en) 2015-06-01 2019-03-06 The Board of Trustees of the University of Illionis MINIATURIZED ELECTRONIC SYSTEMS HAVING WIRELESS POWER CAPACITIES AND NEAR FIELD COMMUNICATION
EP3304130B1 (en) 2015-06-01 2021-10-06 The Board of Trustees of the University of Illinois Alternative approach to uv sensing
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
BR112018072800A2 (pt) 2016-05-31 2019-03-12 Massachusetts Inst Technology artigos compósitos compreendendo nanoestruturas alongadas não lineares e métodos associados
TWI755492B (zh) 2017-03-06 2022-02-21 美商卡爾拜斯有限公司 基於碳納米管的熱界面材料及其製造和使用方法
US20190085138A1 (en) 2017-09-15 2019-03-21 Massachusetts Institute Of Technology Low-defect fabrication of composite materials
WO2019108616A1 (en) 2017-11-28 2019-06-06 Massachusetts Institute Of Technology Separators comprising elongated nanostructures and associated devices and methods for energy storage and/or use
US10707596B2 (en) * 2018-09-21 2020-07-07 Carbice Corporation Coated electrical connectors and methods of making and using thereof
US10462944B1 (en) * 2018-09-25 2019-10-29 Getac Technology Corporation Wave absorbing heat dissipation structure
CN111417282B (zh) * 2019-01-04 2021-07-30 清华大学 散热片以及利用该散热片的电子装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1059266A3 (en) 1999-06-11 2000-12-20 Iljin Nanotech Co., Ltd. Mass synthesis method of high purity carbon nanotubes vertically aligned over large-size substrate using thermal chemical vapor deposition
US6407922B1 (en) * 2000-09-29 2002-06-18 Intel Corporation Heat spreader, electronic package including the heat spreader, and methods of manufacturing the heat spreader
US7265174B2 (en) * 2001-03-22 2007-09-04 Clemson University Halogen containing-polymer nanocomposite compositions, methods, and products employing such compositions
US6921462B2 (en) * 2001-12-17 2005-07-26 Intel Corporation Method and apparatus for producing aligned carbon nanotube thermal interface structure
US6965513B2 (en) 2001-12-20 2005-11-15 Intel Corporation Carbon nanotube thermal interface structures
US20040013598A1 (en) * 2002-02-22 2004-01-22 Mcelrath Kenneth O. Molecular-level thermal management materials comprising single-wall carbon nanotubes
EP1370489B1 (en) * 2002-03-14 2014-03-12 Samsung Electronics Co., Ltd. Composite materials comprising polycarbonate and single-wall carbon nanotubes
CN1296994C (zh) * 2002-11-14 2007-01-24 清华大学 一种热界面材料及其制造方法
US20050061496A1 (en) * 2003-09-24 2005-03-24 Matabayas James Christopher Thermal interface material with aligned carbon nanotubes
CN100345472C (zh) * 2004-04-10 2007-10-24 清华大学 一种热界面材料及其制造方法

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100345472C (zh) * 2004-04-10 2007-10-24 清华大学 一种热界面材料及其制造方法
US8088449B2 (en) 2005-02-16 2012-01-03 Dow Corning Toray Co., Ltd. Reinforced silicone resin film and method of preparing same
US8092910B2 (en) 2005-02-16 2012-01-10 Dow Corning Toray Co., Ltd. Reinforced silicone resin film and method of preparing same
US8334022B2 (en) 2005-08-04 2012-12-18 Dow Corning Corporation Reinforced silicone resin film and method of preparing same
CN1964028B (zh) * 2005-11-11 2010-08-18 鸿富锦精密工业（深圳）有限公司 散热器
US8912268B2 (en) 2005-12-21 2014-12-16 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
US8084532B2 (en) 2006-01-19 2011-12-27 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
US8084097B2 (en) 2006-02-20 2011-12-27 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
CN101054467B (zh) * 2006-04-14 2010-05-26 清华大学 碳纳米管复合材料及其制备方法
CN101058721B (zh) * 2006-04-21 2010-09-29 清华大学 热界面材料制备方法
CN101058720B (zh) * 2006-04-21 2011-08-24 清华大学 热界面材料
CN100583470C (zh) * 2006-12-15 2010-01-20 富准精密工业(深圳)有限公司 发光二极管散热装置组合
US7543960B2 (en) 2006-12-15 2009-06-09 Foxconn Technology Co., Ltd. Light-emitting diode assembly
CN101627096B (zh) * 2007-02-22 2012-11-07 道康宁公司 增强硅树脂膜及其制备方法
US8273448B2 (en) 2007-02-22 2012-09-25 Dow Corning Corporation Reinforced silicone resin films
US8283025B2 (en) 2007-02-22 2012-10-09 Dow Corning Corporation Reinforced silicone resin films
CN101343532B (zh) * 2007-07-13 2011-06-08 清华大学 碳纳米管复合热界面材料的制备方法
CN101360387B (zh) * 2007-08-03 2012-06-13 富葵精密组件(深圳)有限公司 柔性电路板基膜、柔性电路板基板及柔性电路板
CN101372614B (zh) * 2007-08-24 2011-06-08 清华大学 碳纳米管阵列复合导热片及其制备方法
US9023477B2 (en) 2007-08-24 2015-05-05 Tsinghua University Thermally conductive pad with an array of carbon nanotubes and method for making the same
CN101796648B (zh) * 2007-08-28 2012-05-30 加利福尼亚技术学院 用于生长垂直排列的线阵列的晶片的再利用方法
TWI564980B (zh) * 2007-09-12 2017-01-01 斯莫勒科技公司 以奈米結構連接和結合相鄰層
CN101787264A (zh) * 2010-03-06 2010-07-28 东莞市万丰纳米材料有限公司 一种高导热材料及其制备方法和装置
US9263612B2 (en) 2010-03-23 2016-02-16 California Institute Of Technology Heterojunction wire array solar cells
US11349039B2 (en) 2012-02-21 2022-05-31 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
US10090425B2 (en) 2012-02-21 2018-10-02 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
US9947816B2 (en) 2012-04-03 2018-04-17 California Institute Of Technology Semiconductor structures for fuel generation
US9553223B2 (en) 2013-01-24 2017-01-24 California Institute Of Technology Method for alignment of microwires
CN104810335B (zh) * 2014-01-23 2018-11-13 新光电气工业株式会社 碳纳米管片以及半导体装置、碳纳米管片的制造方法以及半导体装置的制造方法
CN104810335A (zh) * 2014-01-23 2015-07-29 新光电气工业株式会社 碳纳米管片以及半导体装置、碳纳米管片的制造方法以及半导体装置的制造方法
CN114133918A (zh) * 2015-12-28 2022-03-04 日立造船株式会社 碳纳米管复合材料以及碳纳米管复合材料的制造方法
CN108559277A (zh) * 2018-05-15 2018-09-21 熊振 一种碳纳米管增强的生物高分子材料及其制备方法
CN111092043A (zh) * 2018-10-24 2020-05-01 应用材料公司 用于沉积腔室的基板支撑件设计
CN112235999A (zh) * 2020-09-11 2021-01-15 深圳烯湾科技有限公司 碳纳米管导热片的制备方法
CN112235999B (zh) * 2020-09-11 2022-04-29 深圳烯湾科技有限公司 碳纳米管导热片的制备方法
CN112358855A (zh) * 2020-10-26 2021-02-12 深圳烯湾科技有限公司 碳纳米管导热片及其制备方法
CN112358855B (zh) * 2020-10-26 2021-12-28 深圳烯湾科技有限公司 碳纳米管导热片及其制备方法
CN114433261A (zh) * 2022-01-25 2022-05-06 大连海事大学 一种基于碳纳米管通道的纳流控芯片加工方法
CN114433261B (zh) * 2022-01-25 2023-04-18 大连海事大学 一种基于碳纳米管通道的纳流控芯片加工方法

Also Published As

Publication number Publication date
US20050167647A1 (en) 2005-08-04
CN100383213C (zh) 2008-04-23
US7253442B2 (en) 2007-08-07
US20070059864A1 (en) 2007-03-15
US7569425B2 (en) 2009-08-04

Similar Documents

Publication Publication Date Title
CN100345472C (zh) 一种热界面材料及其制造方法
CN100383213C (zh) 一种热界面材料及其制造方法
CN1296994C (zh) 一种热界面材料及其制造方法
CN100358132C (zh) 热界面材料制备方法
CN1891780B (zh) 热界面材料及其制备方法
CN100543103C (zh) 热界面材料及其制备方法
TWI253467B (en) Thermal interface material and method for making same
CN1837147B (zh) 热界面材料及其制备方法
US7148512B2 (en) Thermal interface with silver-filled carbon nanotubes
CN101989583A (zh) 散热结构及使用该散热结构的散热系统
CN100364081C (zh) 散热器及其制造方法
CN101864280A (zh) 芯片封装与散热用热界面材料及其制法
CN1919961A (zh) 热界面材料及其制备方法
CN1266247C (zh) 一种热界面材料及其制造方法
CN100356556C (zh) 一种热界面材料及其制造方法
CN100405587C (zh) 散热器及其制备方法
CN101423751B (zh) 热界面材料及其制备方法
CN101058720B (zh) 热界面材料
CN1929118A (zh) 散热器及其制造方法
TWI246879B (en) Thermal interface material and method for making same
TWI233331B (en) Heat sink and a method for making the same
TW200533736A (en) Thermal interface material and method for making same
CN101058721A (zh) 热界面材料制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20080423