TWI388042B - 基於奈米管基板之積體電路 - Google Patents

基於奈米管基板之積體電路 Download PDF

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TWI388042B
TWI388042B TW094138359A TW94138359A TWI388042B TW I388042 B TWI388042 B TW I388042B TW 094138359 A TW094138359 A TW 094138359A TW 94138359 A TW94138359 A TW 94138359A TW I388042 B TWI388042 B TW I388042B
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substrate
carbon nanotube
configuration
carbon nanotubes
layer
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TW200633175A (en
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Chris Wyland
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Taiwan Semiconductor Mfg
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Description

基於奈米管基板之積體電路
本發明係針對積體電路裝置及方法，且更特定言之係針對使用奈米管材料之積體電路基板。
基板材料在製造及建構電路中扮演重要角色。舉例而言，積體電路、覆晶類型電路及其它電路經常安裝於具有傳導線之基板上，使用焊接型連接以將積體電路電耦接及實體耦接至基板。當用於支撐結構(例如，球狀柵格陣列(BGA)或印刷電路板(PCB))時，基板通常固持及/或支撐電路且進一步發揮在耦接支撐結構之電路之間傳導訊號的作用。在某些實例中，PCB被稱作包括用於連接至其它電路之BGA。
典型BGA(及類似地，PCB)具有基板型材料，其中傳導互連與在基板型材料之一或多個表面上的傳導襯墊耦接。互連通常包括與垂直傳導通路連接之橫向軌跡線(跡線)，其中跡線通常配置於多個層中以與通路一起影響在不同傳導襯墊之間的各種連通性。諸如覆晶晶粒及其它組件之眾多電子組件經由傳導襯墊連接至BGA。視建構而定，互連使電路組件之不同幾者彼此及/或與同BGA耦接之其它電路連接。
一實例BGA應用涉及使用覆晶積體電路裝置之建構。經由在BGA之底面上之焊接頭將BGA安裝至外部線路。覆晶積體電路裝置焊接至BGA之上表面並經由連接BGA之上下表面之互連連接至外部線路。
具有表現電路設計特徵之增加的電路密度以及增加的功能性，在一較小區域中經常需要許多互連(及許多跡線及通路)。另外，經常需要更多功率消耗以向電路提供功率。增加的密度及/或功率消耗通常導致增加的熱量生成，此對電路組件可能造成潛在問題。另外，因為電路配置(及相應地，基板)之尺寸減小，所以此等基板經常置放於增加應力之條件下。
此等及其它困難呈現對於建構用於多種應用之電路基板之挑戰。
本發明之各種態樣涉及可使用積體電路及其它裝置建構之基板及/或封裝。本發明例示於許多建構及應用中，其中一些概述如下。
根據一實例實施例，碳奈米管結構建構於一基板中以促進對於該基板之支撐及/或熱傳遞。基板之各種應用包括例如積體電路，電路板、球狀柵格陣列(BGA)及接腳柵格陣列(PGA)。
在一建構中，碳奈米管結構建構於一BGA型基板中以充分增強該基板之強度，且相應地支撐耦接至其之電路。該等碳奈米管結構(例如，一網格、陣列或其它配置)延伸越過該BGA型基板，且提供支撐以抵抗扭曲、破裂及/或與此等基板相關聯之其它應力型挑戰。
在另一建構中，該等碳奈米管結構經組態及配置以在一BGA型基板中傳遞熱。某些應用涉及諸如藉由在一需要熱傳遞之特定方向上定向該等奈米管結構(例如，奈米管或諸如纖維之奈米管之組群)而以促進在一特定方向上之熱傳遞之方式配置奈米管。
在本發明之另一實例實施例中，一積體電路晶片配置包括一具有一碳奈米管材料支撐層之基板。該基板具有一厚度且垂直於該厚度橫向延伸，其中一上表面層經配置以支撐電路。在該基板中該碳奈米管材料支撐層係在該上表面層之下方，且在結構上支撐該基板以及形成於該上表面層處之任一積體電路。
在本發明之另一實例實施例中，一BGA型電路配置包括一碳奈米管增強之基板，該基板在長度方向上橫向延伸，以上下表面區域界定一大體垂直於該長度之厚度。該基板之該上表面區域具有經組態及配置以耦接至積體電路晶片之傳導襯墊。該基板之該下表面區域具有經組態及配置以耦接至外部電路之傳導襯墊。一傳導互連系統延伸於該等上下表面之間，且使該下表面上之傳導襯墊與該上表面上之傳導襯墊耦接。訊號因此傳遞於傳導襯墊(例如)之間及在一耦接於該上表面區域處之晶片與同該下表面區域上之該等傳導襯墊耦接的線路之間。
該增強之基板包括一碳奈米管層，該碳奈米管層垂直地定位於該等上下表面之間且橫向延伸越過該基板之至少一部分。該碳奈米管層包括多種配置中之一或多者中的碳奈米管，該等碳奈米管提供對於該基板之結構支撐及在該基板中之熱傳遞(且當經適當配置時，提供在該基板外之熱傳遞)中的一者或兩者。一電絕緣材料經配置以使該傳導互連系統(互連及/或通路)之延伸通過該碳奈米管層之部分絕緣。在某些應用中，該電絕緣材料實體配置於該碳奈米管層與該互連系統之間，或實體配置於該層中之碳奈米管與該互連系統之間。在其它應用中，該電絕緣材料散佈於該碳奈米管支撐層內，以使該互連系統可電耦接至碳奈米管，但在該碳奈米管層中之絕緣材料抑制在該碳奈米管層中之碳奈米管之間的電導率。
本發明之以上概述並非意欲描述本發明之每一所說明的實施例或每一建構。下面由圖式簡單說明及實施方式更加特定地例示此等實施例。
雖然本發明可服從於各種修正及替代形式，但是其之細節已藉由圖式中之實例而予以展示且將詳細地描述。然而應瞭解，目的並非將本發明限制於所描述之特定實施例。相反，目的為涵蓋屬於如由附屬專利申請範圍所界定之本發明之範疇的所有修正、均等物及替代。
據信本發明可適用於涉及及/或得益於基板(且特定言之得益於展現所要的強度及熱導率之基板)之多種電路及方法。雖然本發明不必受限於此等應用，但是經由對此環境中各實例之論述可最佳地獲得對本發明之各種態樣的瞭解。
根據本發明之一實例實施例，使用包括碳奈米管之基板來建構用於與諸如球狀柵格陣列(BGA)、印刷電路板(PCB)或其它配置之電路配置一起使用的基板。此等碳奈米管可包括例如碳奈米管纖維及單壁與多壁碳奈米管。
在一實施例中，碳奈米管用於支撐或硬挺基板。以碳奈米管硬挺之基板接著可用於支撐諸如電路互連、跡線及通路之電路或在半導體晶圓中之主動式電路層。
選擇基板中碳奈米管之數量以符合特定之應用。舉例而言，在需要電絕緣基板之情況下，將基板中碳奈米管之數量限制至一濃度，該濃度對於涵蓋基板之特定應用係大體不傳導的。在某些應用中，碳奈米管與諸如矽石之其它填充物材料一起使用以形成基板。選擇碳奈米管與矽石(或其它基板材料)之比率以達成所要的傳導率(意即，在促進熱傳導的同時抑制電傳導)。
在其它應用中，在基板中選擇性地置放電絕緣材料以使電路同碳奈米管電絕緣。此方法促進使用相對較高濃度之碳奈米管，在無電絕緣材料之情況下，該等碳奈米管可傳導電流至電路或自電路傳導電流。此種相對較高濃度之碳奈米管促進在基板中及/或在基板外之熱傳遞。
在某些實例中，碳奈米管為基板提供充分之支撐。舉例而言，在某些應用中，碳奈米管提供基板之至少20%之硬度。在其它應用中，藉由碳奈米管所提供之充分支撐提供基板之超過50%的硬度。又在其它應用中，藉由碳奈米管所提供之充分支撐提供基板之超過75%的硬度。
在另一實施例中，碳奈米管經建構以傳導例如由基板中之線路及/或諸如積體電路組件之耦接至基板的電路所生成之熱能。諸如使用基板自身及/或其它部分(諸如使用用於將電路封裝組件接合在一起之材料)而使碳奈米管建構於電路基板之封裝中。
用於硬挺及/或熱耗散時，以多種方式配置碳奈米管。舉例而言，碳奈米管可隨機地或均一地混合於諸如矽之整個基板材料中。作為另一實例，碳奈米管可配置於特定方向上以達成某一硬度及/或熱導率條件。舉例而言，在理想地抑制彎曲或扭曲諸如BGA基板之支撐基板之情況下，碳奈米管經配置以藉由抵抗沿著碳奈米管之長度之壓縮來抑制彎曲或扭曲。在某些應用中，諸如藉由在束狀(truss－like)或多方向配置中配置碳奈米管，碳奈米管因此經配置以在一個以上方向上提供硬度。
在本發明之另一實例實施例中，一碳奈米管矩陣囊封於諸如環氧樹脂之基板型材料中。基板型材料可包括例如FR4環氧樹脂及/或雙馬來醯亞胺三嗪(BT)樹脂。囊封之矩陣因此可服從用於製造BGA及PCB基板之金屬化及孔加工處理。
現參看諸圖式，圖1展示根據本發明之另一實例實施例之具有基板110的BGA配置100之剖視圖，該基板110在其之一部分中具有碳奈米管層120。BGA配置100進一步包括在其上下表面處之傳導襯墊。圖1中之剖視圖展示在上表面處之襯墊130及132，及在下表面處之襯墊134及136。傳導接點(例如，焊球)140及142耦接至襯墊134及136且經進一步調適成耦接相鄰之線路。在上表面處之襯墊130及132經由電導線耦接至電路組件150。電路組件150可建構為例如積體電路晶片。襯墊130及132經由襯墊134及136以及基板110中之互連將電路組件150耦接至接點140及142。
複數個碳奈米管束122－124藉由實例而展示於大體橫向配置中；眾多碳奈米管及奈米管配置可適於與碳奈米管層120一起使用，如所示及其它。舉例而言，可以不同方式定向碳奈米管層120中之碳奈米管以適應特定應用。在各種實施例中，在基板110之碳奈米管層120中(例如，在基板中之環氧樹脂層中)隨機地定向碳奈米管。在某些實施例中，以促進在特定方向上之熱傳遞及/或基板110中之散熱的方式配置碳奈米管。在其它實施例中，以在特定方向上提供結構支撐之方式配置碳奈米管。
在一建構中，碳奈米管層120包括嵌入樹脂中之奈米管絲及/或串之大體水平的網格。碳奈米管層120之大體水平之本質有助於相對於圖1中BGA配置100的定向水平地擴散熱。
在另一建構中，碳奈米管之垂直柱陣列嵌入於環氧樹脂中。碳奈米管之垂直柱陣列可例如使用圖1中之碳奈米管層120建構。此垂直柱方法促進在垂直方向上之熱傳遞，意即遠離鄰近於基板110之上表面之電路且朝著基板的下部傳遞。
在其它應用中，一垂直碳奈米管結構配置於相對較窄之柱中(例如，具有1：1或更高之高度：寬度之比率)以促進在大體垂直方向上之顯著熱傳遞。參看圖1，此大體垂直之熱傳遞係相對於例如在大體橫向(水平的，如圖所示)方向上之熱傳遞，此大體橫向方向上之熱傳遞由相對較寬之碳奈米管層120實現。
在另一實施例中，碳奈米管層大體組成一完整之積體基板，其中如上文論述碳奈米管通常在整個基板中且固持在一起(例如，使用環氧樹脂)。作為一實例再次參看圖1，碳奈米管層120可經擴展以圍繞整個基板110，其中各種電路組件(例如，襯墊130－136及在襯墊之間之互連/通路)形成於碳奈米管層中。
在此實施例中，電路組件同碳奈米管層絕緣。在某些應用中，一絕緣層形成於碳奈米管層(例如，包括奈米管之環氧樹脂)與電路組件之間。再次參看圖1，襯墊130－136以及其間之互連及通路可使用絕緣材料排列。在其它應用中，碳奈米管層本身形成為不傳導電的，其中碳奈米管之濃度充分低以在應用該碳奈米管層之特定應用中抑制電傳導。
圖2展示根據本發明之另一實例實施例之使用垂直碳奈米管配置的基板200之一部分的剖視圖。基板200可用於多種電路結構中，諸如PCB、BGA、半導體基板(例如，用於積體電路晶片或覆晶)及其它。在此方面，用於基板200之材料可為多種材料中之一或多者，諸如環氧樹脂、樹脂或含矽材料。
碳奈米管之相對較窄之柱220、222及224經配置以有助於垂直之熱傳遞，例如作為基板200中之熱通路。此垂直配置可促進自基板之某些區域及/或自諸如基板200中之通路或鄰近於基板上表面之電路元件的某些電路元件(此處，藉由實例展示為元件230、232及234)傳遞熱。
當基板200作為BGA型基板使用時，碳奈米管柱220、222及/或224可經配置以促進自鄰近於基板之上表面之互連垂直地傳遞熱。當與積體電路型基板一起使用時，碳奈米管柱220、222及/或224可經配置與邏輯型電路組件及/或基板中之主動式區域鄰近，以促進自此等組件及/或區域傳遞熱。在此方面，諸如柱220、222及224之碳奈米管柱之形狀、尺寸及位置可經特別地定製以在基板中自特定位置及在特定方向上傳導熱。舉例而言，一或多個柱可經配置以傳導熱遠離諸如元件230、232及/或234之電路元件。
在一進一步建構中，一散熱片240耦接至一或多個碳奈米管結構，如在圖2中所示，該散熱片240視情形連接至碳奈米管柱220、222及224。散熱片240包括導熱材料且經配置以自碳奈米管柱傳導熱並遠離基板200。在某些實例中，使用例如傳導熱傳遞、對流熱傳遞或其它方法進一步冷卻散熱片240。
圖3展示根據本發明之另一實例實施例之PCB(印刷電路板)基板配置300的橫截面圖，該PCB基板配置300具有垂直及水平配置之熱傳遞結構。PCB基板結構300具有一基板310，該基板310藉由實例而標為包括BT樹脂，其上方及下方碳奈米管網格結構分別為320及322。相對垂直之碳奈米管傳導結構330、332、334、336及338延伸於上方與下方碳奈米管網格結構320與322之間，且在其間傳導熱。碳奈米管結構之尺寸、配置及數目藉由實例展示於圖3中；然而，對於多種應用，此等及其它相關條件有眾多變化(例如，添加垂直之碳奈米管結構)。
上方碳奈米管網格結構320自電路及/或耦接於基板310之上表面312上之基板傳導熱。藉由垂直碳奈米管傳導結構330－338自上方碳奈米管網格結構320進一步傳導熱，並傳導至下方碳奈米管網格結構322。相反地，亦可在相反方向上傳遞熱，經由垂直碳奈米管傳導結構330－338自下方碳奈米管網格結構322傳遞熱至上方碳奈米管網格結構320。
可使用基板配置300建構多種電路。舉例而言，藉由實例展示之半導體晶片340可使用(例如)如上文關於圖1所論述之襯墊而耦接至基板310。藉由基板中之互連及/或通路，襯墊將半導體晶片340電耦接至基板310之下表面314上之接點(例如，焊球351－357)。基板配置300中之電路互連及通路在半導體晶片340與接點之間形成電連接。在某些應用中，基板310中之碳奈米管傳導結構以促進自其傳導熱之方式經配置為鄰近於互連及/或通路。
圖4展示根據本發明之另一實例實施例之電路配置400的橫截面圖，該電路配置400具有基於奈米管之散熱結構，該等散熱結構鄰近於傳導互連及通路且自其絕緣。BT－樹脂型基板410包括大體橫向延伸越過基板410之傳導性碳奈米管結構420－428。每一碳奈米管結構420－428包括碳奈米管及環氧樹脂型材料之混合物。
複數個傳導跡線及通路自基板410之上表面區域412延伸至基板之下表面區域414。所示之通路包括通路440－446，且所示之跡線(或襯墊)包括在上表面區域412處之跡線450－453及在下表面區域414處之跡線454－457。藉由實例，下表面414處之跡線或襯墊454－457展示為耦接至焊球。
上表面412處之跡線450－453經由接合線耦接及/或直接地耦接至在上表面上之電路組件。一此電路組件展示為經由接合線耦接至每一跡線450－453的矽晶片460。矽晶片460之下部461視情況地直接耦接至跡線451或452(或耦接至例如定位於大體垂直於所示之橫截面之方向上的其它跡線)。
上文描述之及在圖式中展示之各種實施例僅以說明之方式提供且不應當解釋為限制本發明。基於上文之論述及說明，熟習此項技術者將易於認識到，在未嚴格遵循本文所說明及描述之實例實施例及應用之情況下，可對本發明進行各種修正及改變。舉例而言，可使用不同於碳或除碳以外之材料(諸如硼)建構碳奈米管。另外，藉由實例論述之基板型材料可使用眾多不同類型之材料來建構，該等材料可單獨使用及/或彼此結合使用或與上文所描述之材料結合使用。此等修正及改變並不脫離本發明之實際精神及範疇。
100．．．積體電路晶片配置/BGA配置
110．．．基板
120．．．碳奈米管材料支撐層
122．．．碳奈米管束
124．．．碳奈米管束
130．．．襯墊
132．．．襯墊
134．．．襯墊
136．．．襯墊
140．．．接點
142．．．接點
150．．．電路組件
200．．．基板
220．．．碳奈米管結構/碳奈米管柱
222．．．碳奈米管結構/碳奈米管柱
224．．．碳奈米管結構/碳奈米管柱
230．．．熱生成組件
232．．．熱生成組件
234．．．熱生成組件
240．．．散熱片
310．．．基板
312．．．上表面
314．．．下表面
320．．．上方碳奈米管網格結構
322．．．下方碳奈米管網格結構
330．．．垂直碳奈米管傳導結構
332．．．垂直碳奈米管傳導結構
334．．．垂直碳奈米管傳導結構
336．．．垂直碳奈米管傳導結構
338．．．垂直碳奈米管傳導結構
340．．．半導體晶片
351．．．焊球
352．．．焊球
353．．．焊球
354．．．焊球
355．．．焊球
356．．．焊球
357．．．焊球
400．．．電路配置
410．．．基板
412．．．上表面區域
414．．．下表面區域
420．．．碳奈米管結構/碳奈米管層
422．．．碳奈米管結構/碳奈米管層
424．．．碳奈米管結構/碳奈米管層
426．．．碳奈米管結構/碳奈米管層
428．．．碳奈米管結構/碳奈米管層
440．．．互連/通路
442．．．互連/通路
444．．．互連/通路
446．．．互連/通路
450．．．襯墊/跡線
451．．．襯墊/跡線
452．．．襯墊/跡線
453．．．襯墊/跡線
454．．．襯墊/跡線
455．．．襯墊/跡線
456．．．襯墊/跡線
457．．．襯墊/跡線
460．．．矽晶片
461．．．下部
圖1展示根據本發明之一實例實施例之BGA配置的剖視圖；圖2係根據本發明之另一實例實施例之具有經垂直配置的碳奈米管結構之基板配置的橫截面圖；圖3係根據本發明之另一實例實施例之具有垂直及水平碳奈米管傳導結構的組合之PCB配置的橫截面圖；及圖4展示根據本發明之另一實例實施例之電路配置的橫截面圖，該電路配置具有基於奈米管之散熱結構，該等散熱結構鄰近於傳導互連及通路且自其絕緣。
100．．．積體電路晶片配置/BGA配置
110．．．基板
120．．．碳奈米管材料支撐層
122．．．碳奈米管束
124．．．碳奈米管束
130．．．襯墊
132．．．襯墊
134．．．襯墊
136．．．襯墊
140．．．接點
142．．．接點
150．．．電路組件

Claims (24)

  1. 一種積體電路晶片配置，其包含：一基板，其具有一厚度且垂直於該厚度橫向延伸，該基板具有一上表面及一下表面，且該下表面具有一傳導襯墊；一上表面層，其經配置以支撐一第一電路；及一碳奈米管材料支撐層，其位於該基板中且在該上表面層下方，該支撐層經組態及配置以在結構上支撐該基板及形成於該上表面層之該第一電路，其中該支撐層中的碳奈米管材料係嵌於環氧樹脂中，其中該支撐層包含一頂部部分、一中間部分及一底部部分，該頂部部分具有一沿一第一方向延伸之第一組碳奈米管，該底部部分具有一沿該第一方向延伸之第二組碳奈米管，該中間部分自該頂部部分延伸至該底部部分，且具有一沿第二方向延伸之第三組碳奈米管，其中該第二方向實質上垂直於該第一方向。
  2. 如請求項1之配置，其中該支撐層包括一碳奈米管矩陣。
  3. 如請求項2之配置，其中該碳奈米管矩陣包括橫向延伸越過該基板之大體所有部分的眾多碳奈米管。
  4. 如請求項1之配置，其中該支撐層經組態及配置以越過該基板散熱。
  5. 如請求項1之配置，其中該基板包括該上表面層。
  6. 如請求項1之配置，其中該支撐層橫向延伸越過大體該整個基板。
  7. 如請求項1之配置，其中該碳奈米管材料支撐層經組 態及配置以在該基板中散熱。
  8. 如請求項7之配置，其中該支撐層經組態及配置以自該基板中之一第二電路去除熱。
  9. 如請求項7之配置，其中該支撐層經組態及配置以自耦接至該基板之該第一電路去除熱。
  10. 如請求項1之配置，其中該支撐層自該基板中之該第二電路電絕緣。
  11. 如請求項1之配置，其進一步包含：至少一貫穿孔，自該基板之該上表面延伸至該基材之該下表面，以使該貫穿孔延伸穿過至少一部分的該支撐層，且該至少一貫穿孔與該底表面上的傳導襯墊物理接觸；及經組態及配置以使該支撐層中之碳奈米管與該至少一貫穿孔電絕緣的絕緣材料。
  12. 如請求項1之配置，其中該第一組碳奈米管係經配置以將熱自該基板之該上表面之選定部分導離至該第三組碳奈米管。
  13. 如請求項12之配置，其中該第二組碳奈米管具有一大體管狀結構，該結構具有一大於一寬度之長度，且其中該第二組碳奈米管經配置以將熱自該基板之底表面的選定部分導離至該第三組碳奈米管。
  14. 如請求項1之配置，其中該第三組碳奈米管包括具有一大體管狀結構之複數個碳奈米管，該結構具有一大於寬度之長度，且其中該第三組碳奈米管經配置以使該碳奈米管之該長度將充分支撐提供至處於壓縮中之該基板。
  15. 如請求項1之配置，其進一步包含一散熱片，該散熱片熱耦接至該碳奈米管材料支撐層且配置有該碳奈米管材料以自該基板去除熱。
  16. 一種電路配置，其包含：一基板，其具有一厚度且垂直於該厚度橫向延伸；該基板之一上表面區域，其具有經組態及配置以耦接至積體電路晶片之傳導襯墊；該基板之一下表面區域，其具有經組態及配置以耦接至外部電路之傳導襯墊；一傳導互連系統，其具有一貫穿孔延伸於該下表面與該上表面之間，以使該貫穿孔與該下表面上之該等傳導襯墊及該上表面上之該等傳導襯墊物理接觸，而使得該下表面上之該等傳導襯墊與該上表面上之該等傳導襯墊耦接，該貫穿孔經組態及配置以在該等傳導襯墊之間傳遞訊號；一在該基板中之碳奈米管層，其垂直地位於該上表面與該下表面之間且橫向延伸越過該基板之至少一部分，該碳奈米管層包括碳奈米管，該等碳奈米管經組態及配置以用於以下之至少一者：在結構上支撐該基板及在該基板中傳導熱，其中該碳奈米管層為非導電的；其中該貫穿孔延伸穿越該碳奈米管層並與該等碳奈米管電絕緣。
  17. 如請求項16之配置，其中該等碳奈米管經組態及配置以傳導熱遠離該基板之一選定部分。
  18. 如請求項17之配置，其中該等碳奈米管經組態及配 置以傳導熱遠離該等延伸通過該碳奈米管層之該貫穿孔。
  19. 如請求項16之配置，其中該碳奈米管層在該貫穿孔延伸通過之位置處包括絕緣材料，該絕緣材料經組態及配置以使該等碳奈米管與該貫穿孔電絕緣。
  20. 如請求項16之配置，其中該碳奈米管層經組態及配置以向該基板提供充分之結構支撐。
  21. 如請求項16之配置，其中該碳奈米管層包含大體該整個基板，且其中該傳導互連系統係處於該碳奈米管層中。
  22. 一種用於製造一積體電路基板以傳遞熱之方法，該方法包含：提供一基板，其具有一上表面及一下表面，該上表面具有經組態及配置以與積體電路晶片耦接之傳導襯墊，該下表面具有經組態及配置以與外部電路耦接之傳導襯墊；形成一貫穿孔於該基板之該上表面及該下表面之間延伸，以使該貫穿孔與該下表面上之該等傳導襯墊及該上表面上之該等傳導襯墊物理接觸，而使得該下表面上之該等傳導襯墊與該上表面上之該等傳導襯墊耦接，該貫穿孔經組態及配置以在該等傳導襯墊之間傳遞訊號；特徵化該基板之熱生成組件；及在該基板中配置碳奈米管結構以形成一碳奈米管層將熱導離該等熱生成組件，其中該碳奈米管層為非導電的。
  23. 如請求項22之方法，其中在該基板中配置碳奈米管結構以遠離該等熱生成組件傳遞熱包括：配置一碳奈米管結構之一第一端與一熱生成組件直接相鄰，及在一可自該基板 去除熱之位置中配置該碳奈米管結構之一第二端。
  24. 如請求項23之方法，其進一步包含：於該碳奈米管層中沿一與在該第一端與該第二端之間之方向大體平行的方向上配置該等碳奈米管，以促進沿著該等碳奈米管之該長度傳遞熱其中該等碳奈米管具有一充分大於寬度之長度。
TW094138359A 2004-11-04 2005-11-01 基於奈米管基板之積體電路 TWI388042B (zh)

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WO2006048843A2 (en) 2006-05-11
CN101095226A (zh) 2007-12-26
EP1810329A2 (en) 2007-07-25
WO2006048843A3 (en) 2006-10-12
CN100568495C (zh) 2009-12-09
TW200633175A (en) 2006-09-16
US8681500B2 (en) 2014-03-25
JP2008519452A (ja) 2008-06-05
EP1810329B1 (en) 2016-04-27
US20090213551A1 (en) 2009-08-27
KR20070088674A (ko) 2007-08-29

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