JP5315688B2 - 積層型半導体装置 - Google Patents
積層型半導体装置 Download PDFInfo
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- JP5315688B2 JP5315688B2 JP2007339005A JP2007339005A JP5315688B2 JP 5315688 B2 JP5315688 B2 JP 5315688B2 JP 2007339005 A JP2007339005 A JP 2007339005A JP 2007339005 A JP2007339005 A JP 2007339005A JP 5315688 B2 JP5315688 B2 JP 5315688B2
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- heat
- hole
- conductive member
- semiconductor chip
- semiconductor device
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
12 基板(半導体チップ)
16 熱伝導性部材
17 貫通孔
18 貫通孔用熱伝導性部材
19,26,28 カーボンナノチューブ
27 粒状部材
Claims (4)
- それぞれが間隔をおいて積層された複数の基板を備える積層型半導体装置であって、各基板間には、該各基板間における熱伝導率を向上させるための熱伝導性部材が配置され、
前記熱伝導性部材はダイヤモンド薄膜であり、
前記各基板及び該各基板間に配置された前記熱伝導性部材には、前記各基板及び前記熱伝導性部材を前記基板の積層方向に連続して貫通する貫通孔が形成されており、該貫通孔内には、該貫通孔内における熱伝導率を向上させるための貫通孔用熱伝導性部材が配置され、
前記貫通孔用熱伝導性部材は複数の金属粒子であり、
前記複数の基板の上方に配置され、金属で形成されたヒートシンクを備え、
前記貫通孔用熱伝導性部材は、前記ヒートシンクと接して、前記ヒートシンクを介して熱を放出する熱伝導用である
ことを特徴とする積層型半導体装置。 - ホットスポット近傍に配置された貫通孔の直径がその他の貫通孔の直径よりも大きい
ことを特徴とする請求項1に記載の積層型半導体装置。 - ホットスポット近傍の貫通孔の個数がその他の領域の貫通孔の個数よりも多い
ことを特徴とする請求項1または2に記載の積層型半導体装置。 - 貫通孔用伝導性部材は複数の金属ナノ粒子である
請求項1から3のいずれか1項に記載の積層型半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007339005A JP5315688B2 (ja) | 2007-12-28 | 2007-12-28 | 積層型半導体装置 |
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JP2007339005A JP5315688B2 (ja) | 2007-12-28 | 2007-12-28 | 積層型半導体装置 |
Related Child Applications (1)
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JP2013089530A Division JP5626400B2 (ja) | 2013-04-22 | 2013-04-22 | 積層型半導体装置 |
Publications (3)
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JP2009164152A JP2009164152A (ja) | 2009-07-23 |
JP2009164152A5 JP2009164152A5 (ja) | 2011-05-06 |
JP5315688B2 true JP5315688B2 (ja) | 2013-10-16 |
Family
ID=40966489
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JP2007339005A Active JP5315688B2 (ja) | 2007-12-28 | 2007-12-28 | 積層型半導体装置 |
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JP (1) | JP5315688B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10847615B2 (en) | 2018-09-20 | 2020-11-24 | Kabushiki Kaisha Toshiba | Semiconductor device |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010050259A (ja) * | 2008-08-21 | 2010-03-04 | Zycube:Kk | 3次元積層半導体装置 |
JP5439120B2 (ja) * | 2009-11-02 | 2014-03-12 | 株式会社東芝 | 半導体装置およびその製造方法 |
US8232137B2 (en) * | 2009-12-10 | 2012-07-31 | Intersil Americas Inc. | Heat conduction for chip stacks and 3-D circuits |
JP2011243689A (ja) * | 2010-05-17 | 2011-12-01 | Panasonic Corp | 半導体装置及びその製造方法 |
KR101715761B1 (ko) * | 2010-12-31 | 2017-03-14 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
US9704793B2 (en) | 2011-01-04 | 2017-07-11 | Napra Co., Ltd. | Substrate for electronic device and electronic device |
JP5709718B2 (ja) * | 2011-01-04 | 2015-04-30 | 有限会社 ナプラ | 発光デバイス |
JP5250707B2 (ja) * | 2011-05-26 | 2013-07-31 | 有限会社 ナプラ | 電子機器用基板及び電子機器 |
US8367478B2 (en) | 2011-06-02 | 2013-02-05 | International Business Machines Corporation | Method and system for internal layer-layer thermal enhancement |
EP2555239A3 (en) * | 2011-08-04 | 2013-06-05 | Sony Mobile Communications AB | Thermal package with heat slug for die stacks |
US9129929B2 (en) | 2012-04-19 | 2015-09-08 | Sony Corporation | Thermal package with heat slug for die stacks |
JP6201322B2 (ja) * | 2013-01-18 | 2017-09-27 | 富士通株式会社 | 電子デバイス及びその製造方法、並びに基板構造及びその製造方法 |
CN112968005B (zh) * | 2021-02-02 | 2023-02-03 | 北京大学东莞光电研究院 | 带连通孔的金刚石复合片及其制造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60235446A (ja) * | 1984-05-09 | 1985-11-22 | Nec Corp | 半導体装置とその製造方法 |
JPH0529533A (ja) * | 1991-07-23 | 1993-02-05 | Fujitsu Ltd | 半導体装置 |
JP3147087B2 (ja) * | 1998-06-17 | 2001-03-19 | 日本電気株式会社 | 積層型半導体装置放熱構造 |
TWI388042B (zh) * | 2004-11-04 | 2013-03-01 | Taiwan Semiconductor Mfg | 基於奈米管基板之積體電路 |
JP2006147801A (ja) * | 2004-11-18 | 2006-06-08 | Seiko Precision Inc | 放熱シート、インターフェース、電子部品及び放熱シートの製造方法 |
JP4688526B2 (ja) * | 2005-03-03 | 2011-05-25 | Okiセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
US7928590B2 (en) * | 2006-08-15 | 2011-04-19 | Qimonda Ag | Integrated circuit package with a heat dissipation device |
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2007
- 2007-12-28 JP JP2007339005A patent/JP5315688B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10847615B2 (en) | 2018-09-20 | 2020-11-24 | Kabushiki Kaisha Toshiba | Semiconductor device |
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JP2009164152A (ja) | 2009-07-23 |
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