RU2012118036A - Поперечное рассеивание тепла 3-d интегральной схемы - Google Patents

Поперечное рассеивание тепла 3-d интегральной схемы Download PDF

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RU2012118036A
RU2012118036A RU2012118036/28A RU2012118036A RU2012118036A RU 2012118036 A RU2012118036 A RU 2012118036A RU 2012118036/28 A RU2012118036/28 A RU 2012118036/28A RU 2012118036 A RU2012118036 A RU 2012118036A RU 2012118036 A RU2012118036 A RU 2012118036A
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heat
conducting material
crystal
crystals
conducting
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RU2502154C1 (ru
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Кеннет КАСКУН
Шицюнь ГУ
Мэттью М. НОВАК
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Квэлкомм Инкорпорейтед
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06589—Thermal management, e.g. cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1. Способ рассеивания тепла в трехмерном устройстве интегральной схемы (ИС), содержащем первый кристалл, уложенный с образованием слоистой структуры на второй кристалл, причем каждый из кристаллов имеет сконструированные в нем элементы, и кристаллы соединены друг с другом множеством межслоевых соединений, причем межслоевые соединения создают промежуток между первым и вторым кристаллами, при этом упомянутый способ содержит:обеспечение сквозного отверстия через подложку, заполненного первым проводящим тепло материалом, расположенного в первом кристалле;нанесение проводящего тепло слоя на поверхность второго кристалла; иобеспечение физического межсоединения между вторым кристаллом и сквозным отверстием через подложку, посредством проводящего тепло слоя.2. Способ по п.1, в котором первый проводящий тепло материал является электрически изолирующим.3. Способ по п.1, в котором первый проводящий тепло материал является структурированной пленкой.4. Способ по п.1, в котором упомянутое нанесение проводящего тепло слоя содержит, по меньшей мере, одним из следующего: ХОГФ, ФОГФ, эжектирования, нанесения.5. Способ по п.1, в котором проводящий тепло слой выбирается из списка, состоящего из: алмазной матрицы и алмазной пленочной структуры.6. Способ по п.1, в котором первый проводящий тепло материал дополнительно является электрически проводящим.7. Способ по п.6, в котором первый проводящий тепло материал, по меньшей мере, частично состоит из углеродных нанотрубок.

Claims (7)

1. Способ рассеивания тепла в трехмерном устройстве интегральной схемы (ИС), содержащем первый кристалл, уложенный с образованием слоистой структуры на второй кристалл, причем каждый из кристаллов имеет сконструированные в нем элементы, и кристаллы соединены друг с другом множеством межслоевых соединений, причем межслоевые соединения создают промежуток между первым и вторым кристаллами, при этом упомянутый способ содержит:
обеспечение сквозного отверстия через подложку, заполненного первым проводящим тепло материалом, расположенного в первом кристалле;
нанесение проводящего тепло слоя на поверхность второго кристалла; и
обеспечение физического межсоединения между вторым кристаллом и сквозным отверстием через подложку, посредством проводящего тепло слоя.
2. Способ по п.1, в котором первый проводящий тепло материал является электрически изолирующим.
3. Способ по п.1, в котором первый проводящий тепло материал является структурированной пленкой.
4. Способ по п.1, в котором упомянутое нанесение проводящего тепло слоя содержит, по меньшей мере, одним из следующего: ХОГФ, ФОГФ, эжектирования, нанесения.
5. Способ по п.1, в котором проводящий тепло слой выбирается из списка, состоящего из: алмазной матрицы и алмазной пленочной структуры.
6. Способ по п.1, в котором первый проводящий тепло материал дополнительно является электрически проводящим.
7. Способ по п.6, в котором первый проводящий тепло материал, по меньшей мере, частично состоит из углеродных нанотрубок.
RU2012118036/28A 2008-05-05 2009-04-27 Поперечное рассеивание тепла 3-d интегральной схемы RU2502154C1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/115,076 US8502373B2 (en) 2008-05-05 2008-05-05 3-D integrated circuit lateral heat dissipation
US12/115,076 2008-05-05

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EP (1) EP2286452A1 (ru)
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KR (1) KR101255675B1 (ru)
CN (2) CN103219328B (ru)
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CA (1) CA2720966C (ru)
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KR101255675B1 (ko) 2013-04-17
KR20110004475A (ko) 2011-01-13
WO2009137286A1 (en) 2009-11-12
RU2459315C1 (ru) 2012-08-20
JP2013077837A (ja) 2013-04-25
CA2720966A1 (en) 2009-11-12
US8502373B2 (en) 2013-08-06
MX2010011848A (es) 2010-11-30
RU2502154C1 (ru) 2013-12-20
CA2720966C (en) 2015-06-30
CN102017139A (zh) 2011-04-13
TWI496269B (zh) 2015-08-11
TW201005917A (en) 2010-02-01
JP2011520286A (ja) 2011-07-14
BRPI0912376A2 (pt) 2018-02-27
CN103219328B (zh) 2017-04-12
JP2015167259A (ja) 2015-09-24
JP5788379B2 (ja) 2015-09-30
EP2286452A1 (en) 2011-02-23
CN103219328A (zh) 2013-07-24
CN102017139B (zh) 2013-05-08
RU2010149596A (ru) 2012-06-20
US20090273068A1 (en) 2009-11-05

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