CN101668383B - 电路板以及电路板封装结构 - Google Patents

电路板以及电路板封装结构 Download PDF

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CN101668383B
CN101668383B CN2008103043535A CN200810304353A CN101668383B CN 101668383 B CN101668383 B CN 101668383B CN 2008103043535 A CN2008103043535 A CN 2008103043535A CN 200810304353 A CN200810304353 A CN 200810304353A CN 101668383 B CN101668383 B CN 101668383B
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circuit board
carbon nano
package structure
insulating barrier
layer
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CN101668383A (zh
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蔡崇仁
张宏毅
陈嘉成
徐盟杰
林承贤
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Qi Ding Technology Qinhuangdao Co Ltd
Zhen Ding Technology Co Ltd
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Fukui Precision Component Shenzhen Co Ltd
Zhending Technology Co Ltd
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Abstract

本发明提供一种电路板，其依次包括导电层、复合材料层以及绝缘层，所述绝缘层具有一个收容孔，所述复合材料层包括聚合物基体以及至少一个设置于聚合物基体中的碳纳米管束，所述碳纳米管束的一端与导电层电连接，另一端从绝缘层的收容孔露出。本发明还提供一种电路板封装结构。本发明的电路板以及电路板封装结构具有较佳的散热性能。

Description

电路板以及电路板封装结构
技术领域
本发明涉及电路板技术领域，尤其涉及一种电路板以及一种内埋式的电路板封装结构。
背景技术
在信息、通讯及消费性电子产业中，电路板是所有电子产品不可或缺的基本构成要件。随着电子产品往小型化、高速化方向发展，电路板也从单面电路板往双面电路板、多层电路板方向发展。多层电路板由于具有较多的布线面积和较高的装配密度而得到广泛的应用，请参见Takahashi，A.等人于1992年发表于IEEE Trans.on Components，Packaging，andManufacturing Technology的文献“High density multilayer printed circuit boardfor HITAC M~880”。
布线面积的增加、导电线路的细化使得电路板线路的线宽和线间距越来越小，线路的电阻越来越大，产生的热量也越来越多。而装配密度的增加极大地增加了封装在电路板上的封装元件如集成芯片、电阻的数量，也极大地增加了封装元件产生的热量。也就是说，现有技术的电路板以及电路板封装结构产生了较多的热量，但并不能较快地散热，尤其是对于内埋式的电路板封装结构来说。
因此，有必要提供一种具有较佳散热性能的电路板以及电路板封装结构。
发明内容
以下将以实施例说明一种电路板以及电路板封装结构。
一种电路板，其依次包括导电层、复合材料层以及绝缘层，所述绝缘层具有一个收容孔，所述复合材料层包括聚合物基体以及至少一个设置于聚合物基体中的碳纳米管束，所述碳纳米管束的一端与导电层接触，另一端从绝缘层的收容孔露出。
一种电路板封装结构，其包括封装元件以及如上所述的电路板，所述封装元件所述封装元件设置于绝缘层的收容孔，并通过碳纳米管束与导电层电连接。
本技术方案的电路板以及电路板封装结构中具有复合材料层，所述复合材料层包括多个彼此绝缘的碳纳米管束，并且每个碳纳米管束均与导电层和绝缘层相接触，从而，复合材料层中的碳纳米管束可以电导通导电层和埋设于绝缘层的封装元件，并可将封装元件的热量较快地传导至导电层以加快热量的散发速度。
附图说明
图1为本技术方案第一实施例提供的电路板的示意图。
图2为本技术方案第一实施例提供的基底的示意图。
图3为本技术方案第一实施例提供的在基底上形成催化剂层的示意图。
图4为本技术方案第一实施例提供的在催化剂层上生长多个碳纳米管束的示意图。
图5为本技术方案第一实施例提供的聚合物基体填充多个碳纳米管的间隙的示意图。
图6为本技术方案第一实施例提供的去除基底和催化剂层的示意图。
图7为本技术方案第一实施例提供的包括如图1所示的电路板的电路板封装结构的示意图
图8为本技术方案第二实施例提供的电路板封装结构的示意图。
图9为本技术方案第三实施例提供的电路板封装结构的示意图。
图10为本技术方案第四实施例提供的电路板封装结构的示意图。
具体实施方式
下面将结合附图及多个实施例，对本技术方案提供的电路板及电路板封装结构作进一步的详细说明。
请参阅图1，本技术方案第一实施例提供的电路板10依次包括导电层11、复合材料层12以及绝缘层13。所述导电层11可以由铜、铝、金等具有较佳导电性能的材料制成。导电层11具有导电图形111，所述导电图形111包括导电线路1111和多个导电接点1112。所述导电线路1111用于传输信号，所述多个导电接点1112用于与封装元件电连接以实现信号处理。所述复合材料层12位于导电层11和绝缘层13之间，具有第一表面1201和第二表面1202。所述第一表面1201与导电层11相接触，所述第二表面1202与第一表面1201平行相对，且与绝缘层13相接触。所述绝缘层13由绝缘材料制成，用于绝缘以及支撑导电层11和复合材料层12。绝缘层13具有一个用于收容埋设封装元件的收容孔130，所述收容孔130的开设位置与多个导电接点1112的位置相对应，以便于实现封装元件与多个导电接点1112的电连接。
具体地，所述复合材料层12包括聚合物基体121和设置于聚合物基体121中的碳纳米管束122。所述聚合物基体121可以为环氧(Epoxy)、聚酰亚胺(Polyimide，PI)、聚乙烯对苯二甲酸乙二醇酯(Polyethylene Terephtalate，PET)、聚四氟乙烯(Polytetrafluoroethylene，PTFE)、聚硫胺(Polyamide)、聚甲基丙烯酸甲酯(Polymethylmethacrylate，PMMA)、聚碳酸酯(Polycarbonate)或聚酰亚胺聚乙烯对苯二甲酯共聚物(Polyamide polyethylene-terephthalate copolymer)等绝缘树脂。所述碳纳米管束122包括一根碳纳米管或多根平行排列的碳纳米管。碳纳米管束122的一端与导电层11电连接，另一端从收容孔130露出，以便于与设置于收容孔130的封装元件接触，从而实现导电层11与封装元件的电连接。碳纳米管束122的数量可以为一个，也可以为多个，视封装元件的结构而定。
本实施例中，复合材料层12包括多个碳纳米管束122，多个碳纳米管束122成阵列状彼此具有一定间隔地嵌置于聚合物基体121中。也就是说，所述多个碳纳米管束122彼此绝缘地设置于导电层11和绝缘层13之间。
所述多个碳纳米管束122彼此平行排列。每个碳纳米管束122均包括多根平行排列的碳纳米管，所述多根碳纳米管的轴向即碳纳米管束122的延伸方向与第一表面1201之间的夹角为80~100度之间。也就是说，每个碳纳米管束122均基本垂直于第一表面1201和第二表面1202。
并且，每个碳纳米管束122的长度均略大于或基本等于复合材料层12的厚度，从而可以使得每个碳纳米管束122的一端略突出于第一表面1201或恰好与第一表面1201相齐平，另一端则略突出于第二表面1202或恰好与第二表面1202相齐平。从而，碳纳米管束122可以电连接导电层11与埋设于绝缘层13的封装元件，并可以较快地将埋设于绝缘层13的封装元件的热量传导至第一表面1201和导电层11，从而快速地将热量散发至外界。
本技术方案第一实施例提供的电路板10可以通过如下步骤制备：
第一步，请参阅图2，提供基底100。基底100可为铜层、铝层或镍层等金属层。基底100的厚度可为2~200微米之间。
第二步，请参阅图3，在基底100上形成催化剂层200。
所述催化剂层200为铁、钴、镍或其合金等可以生长碳纳米管的材料。并且，催化剂层200具有预定图案。所述预定图案的形状、分布均不限，仅需使得生长出的多个碳纳米管束彼此具有一定间隔即可。本实施例中，所述预定图案为阵列图案，以使得生长出的多个碳纳米管束成阵列状。所述预定图案的形成方法也不限。例如，可以通过先在基底100表面形成图案化的光阻，再在基底100表面电镀催化剂材料形成；也可以通过先以电镀、蒸镀、溅镀或者气相沉积方法在基底100上形成整层的催化剂层，再选择性地蚀刻催化剂层而形成。
第三步，请参阅图4，在催化剂层200上生长出多个碳纳米管束122。
由于催化剂层200具有预定的阵列图案，因此，生长出的多个碳纳米管束122也按预定图案呈阵列分布，彼此具有一定间隔，以可填充聚合物基体，从而确保多个碳纳米管束122之间的绝缘。
所述多个碳纳米管束122的生长方式不限。例如，在以化学气相沉积法制备时，可将形成有催化剂层200的基底100放入反应炉中，在700~1000摄氏度下，通入乙炔、乙烯等碳源气，从而在催化剂层200上生长出多个碳纳米管束122。多个碳纳米管束122的生长高度可通过生长时间来控制，一般生长高度为1~30微米。每个碳纳米管束122中多根碳纳米管的排列方向较为一致，多根碳纳米管的轴向与催化剂层200的夹角均大致在80~100度之间。也就是说，多个碳纳米管束122的延伸方向基本垂直于催化剂层200。
第四步，形成复合材料层12。
首先，请参阅图5，以涂布、挤压或其它方式将聚合物基体121施加在多个碳纳米管束122之间，使得聚合物基体121充分填充多个碳纳米管束122的空隙，并使得聚合物基体121与多个碳纳米管束122远离催化剂层200的一端相齐平，从而形成平整的第一表面1201，使得聚合物基体121起到连接并隔绝多个碳纳米管束122的作用，且并不埋设多个碳纳米管束122远离催化剂层200的一端。
另外，如果将聚合物基体121施加在多个碳纳米管束122时聚合物基体121埋设了多个碳纳米管束122远离催化剂层200的一端，使得多个碳纳米管束122整体均埋设于聚合物基体121中时，可以通过机械切割、激光烧蚀或其它方式去除部分聚合物基体121，以形成平整的第一表面1201，并露出多个碳纳米管束122远离催化剂层200的一端。
其次，请一并参阅图5及图6，去除基底100、催化剂层200以及部分填充于催化剂层200之间的聚合物基体121。
去除基底100及催化剂层200的方法可以为蚀刻法。例如当基底100为铜、催化剂层200为三氧化二铁时，可用三氯化铁溶液蚀刻去除基底100及催化剂层200。当然，采用其它的基底材料及催化剂层材料时采用相应的蚀刻剂即可。
蚀刻去除基底100、催化剂层200后，还需要将部分填充于催化剂层200之间的聚合物基体121去除，以使聚合物基体121与多个碳纳米管束122靠近催化剂层200的一端相齐平，从而形成平整的第二表面1202。即，形成了复合材料层12，如图6所示。
去除聚合物基体121的方法不限，可以为机械切割、激光烧蚀或模具冲裁等。
第五步，将导电层11压合于复合材料层12的第一表面1201，将绝缘层13压合于第二表面1202，从而获得电路板10，如图1所示。
导电层11和绝缘层13可以同时压合于复合材料层12，也可以先后压合于复合材料层12。
将导电层11压合于第一表面1201之前或之后，还包括在导电层11形成导电图形111的步骤。将导电层11形成导电图形111的步骤可以通过图像转移法以及蚀刻工序实现。
将绝缘层13压合于第二表面1202之前或之后，还可以通过机械钻孔、激光烧孔或化学蚀孔等方式在绝缘层13的预定位置形成收容孔130，以便于收容、埋设封装元件。从而，可以使得碳纳米管束122的一端与导电层11电连接，另一端从收容孔130露出，可以方便地实现设置于收容孔130的封装元件与导电层11的电连接。
请参阅图7，本技术方案还提供一种电路板封装结构1，其包括封装元件14、封装树脂15以及如图1所示的电路板10。
所述封装元件14为用于实现特定处理功能的器件，其可以为集成电路芯片，也可以为电容电感元件，还可以为存储器或其它器件。所述封装元件14具有多个导电端点141，所述多个导电端点141用于与其他电子元器件或电路板实现电连接。
本实施例中，封装元件14通过封装树脂15埋设于绝缘层13的收容孔130内，其多个导电端点141的形状、数量均与导电接点1112的形状、数量相对应。每个导电端点141均通过一个或多个碳纳米管束122实现与一个导电接点1112之间的电连接。
由于多个碳纳米管束122彼此绝缘，从而可以使得多个导电端点141与多个导电接点1112之间的导通一一对应，而封装元件14除了多个导电端点141外的其余部位均被保护层覆盖而绝缘，从而保证了封装元件14与电路板10之间信号的正确传输与处理。
当然，如果封装元件14仅具有一个导电端点141，则复合材料层12仅需包括一个碳纳米管束122即可实现导电端点141与导电层11的电连接。
请参阅图8，本技术方案第二实施例提供的电路板封装结构2与第一实施例提供的电路板封装结构1大致相同，其不同之处在于：所述电路板封装结构2还包括一个导热层26。所述导热层26为具有较好导热性能的材料薄层，其可以为金属材料层，也可以为复合材料层，还可以为其它材料层。本实施例中，所述导热层26为与复合材料层22结构相同的薄层，设置于绝缘层23远离复合材料层22的一侧，且与绝缘层23接触。从而，封装元件24散发的热量可以通过导热层26中的多个碳纳米管束262快速散发至外界。
请参阅图9，本技术方案第三实施例提供的电路板封装结构3与第二实施例提供的电路板封装结构2大致相同，其不同之处在于：所述电路板封装结构3还包括一个金属基板37。所述金属基板37可以由具有良好导热性能的材料如铜、铝等制成，设置于导热层36远离绝缘层33的一侧，且与导热层36接触。从而，封装元件34散发的热量可以通过导热层36中的多个碳纳米管束362快速传导至金属基板37，并由金属基板37快速散发至外界。也就是说，金属基板37可以进一步加快封装元件34的热量散发速度。
请参阅图10，本技术方案第四实施例提供的电路板封装结构4与第一实施例提供的电路板封装结构1大致相同，其不同之处在于：所述电路板封装结构4还包括一个双面电路板48。所述双面电路板48设置于绝缘层43远离复合材料层42的一侧，且与绝缘层43接触。双面电路板48包括第一导电线路层481、第二导电线路层482以及设置于第一导电线路层481与第二导电线路层482之间的树脂层483。
所述电路板封装结构4还具有一个导孔401，用于实现导电层41与双面电路板48的电导通。本实施例中，导孔401为贯穿导电层41、复合材料层42、绝缘层43以及双面电路板48的导通孔。
当然，电路板封装结构4除如本实施例所示包括一个双面电路板48外，也可以包括一个单面电路板或者一个多层电路板，同样可以通过复合材料层42更有效散发封装元件44的热量，并实现封装元件44与导电层41的电导通。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (8)

1.一种电路板封装结构，其包括封装元件以及电路板，所述电路板依次包括导电层、复合材料层以及绝缘层，所述导电层具有导电图形，所述导电图形包括导电线路和多个导电接点，所述绝缘层具有一个收容孔，所述收容孔的位置与多个导电接点的位置相对应，所述封装元件设置于绝缘层的收容孔，所述封装元件具有与多个导电接点对应的多个导电端点，所述复合材料层包括聚合物基体以及多个设置于聚合物基体中的碳纳米管束，所述复合材料层具有相对的第一表面和第二表面，所述第一表面与导电层接触，所述第二表面与绝缘层接触，所述碳纳米管束的一端与导电层电连接，另一端从绝缘层的收容孔露出，每个导电端点均通过一个或多个碳纳米管束与导电层的一个导电接点电连接。
2.如权利要求1所述的电路板封装结构，其特征在于，所述碳纳米管束的延伸方向与第一表面的夹角为80～100度之间。
3.如权利要求2所述的电路板封装结构，其特征在于，所述碳纳米管束的一端突出于第一表面或与第一表面相齐平，另一端突出于第二表面或与第二表面相齐平。
4.如权利要求1所述的电路板封装结构，其特征在于，所述碳纳米管束包括一根碳纳米管或多根平行排列的碳纳米管。
5.如权利要求1所述的电路板封装结构，其特征在于，所述多个碳纳米管束成阵列状彼此绝缘地设置于聚合物基体中。
6.如权利要求1所述的电路板封装结构，其特征在于，所述电路板封装结构还包括一个导热层，所述导热层设置于绝缘层远离复合材料层的一侧，且与绝缘层接触。
7.如权利要求6所述的电路板封装结构，其特征在于，所述电路板封装结构还包括一个金属基板，所述金属基板设置于导热层远离绝缘层的一侧，且与导热层接触。
8.如权利要求1所述的电路板封装结构，其特征在于，所述电路板封装结构还包括一个单面电路板、双面电路板或多层电路板，所述单面电路板、双面电路板或多层电路板设置于绝缘层远离复合材料层的一侧，与绝缘层接触，并通过导孔与导电层电导通。
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