CN111092043A - 用于沉积腔室的基板支撑件设计 - Google Patents

用于沉积腔室的基板支撑件设计 Download PDF

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CN111092043A
CN111092043A CN201910717056.1A CN201910717056A CN111092043A CN 111092043 A CN111092043 A CN 111092043A CN 201910717056 A CN201910717056 A CN 201910717056A CN 111092043 A CN111092043 A CN 111092043A
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substrate support
substrate
support
support arm
foil
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考希克·饶
戈文达·瑞泽
阿努巴霍夫·斯利瓦斯塔瓦
桑托斯·库马尔·皮拉帕
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Applied Materials Inc
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Applied Materials Inc
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Abstract

本公开内容大体涉及一种基板支撑件，所述基板支撑件包括主体，所述主体具有基板接收表面，所述主体包括介电材料。所述主体还包括第一箔，所述第一箔在所述基板接收表面下方嵌入在所述主体中。所述主体还包括导电网状物，所述导电网状物在所述第一箔下方嵌入在所述主体中。所述主体还包括中心接头结构，所述中心接头结构形成在所述主体的底表面中，与所述网状物电连通。

Description

用于沉积腔室的基板支撑件设计
技术领域
本公开内容大体涉及用于在沉积腔室中支撑基板的基板支撑件(诸如基座或静电吸附装置)的设备和方法。
背景技术
集成电路已发展成复杂器件，其可以在单个芯片上包括数百万个部件(例如，晶体管、电容器、电阻器及类似部件)。芯片设计的发展需要更快的电路以及更大的电路密度，而对更大的电路密度的需求需要减小集成电路部件的尺寸。例如，超大规模集成(ULSI)电路器件可以包括形成在半导体基板(诸如硅(Si)基板)上的超过一百万个电子器件(例如，晶体管)，这些电子器件协作以执行器件内的各种功能。
静电吸盘或ESC通常用于将基板保持在沉积或蚀刻腔室内的基板支撑件上以形成这些器件。在基板上提供均匀的膜沉积的基板的温度均匀性受基板支撑件的温度的影响。通常，ESC耦接到接地电位。然而，来自接地的电磁能量可能不利地影响温度监测装置操作。另外，腔室清洁工艺通常使用对ESC硬件有腐蚀性的气体，这会缩短ESC的使用寿命。
需要的是一种可减轻上述一个或多个问题的方法和设备。
发明内容
本公开内容大体涉及一种基板支撑件，所述基板支撑件包括主体，所述主体具有基板接收表面，所述主体包括介电材料。所述主体还包括第一箔，所述第一箔在所述基板接收表面下方嵌入在所述主体中。所述主体还包括导电网状物，所述导电网状物在所述第一箔下方嵌入在所述主体中。所述主体还包括中心接头(tap)结构，所述中心接头结构形成在所述主体的底表面中，与所述网状物电连通。
在另一个实施方式中，提供了一种基板支撑件，所述基板支撑件包括：主体，所述主体具有基板接收表面，所述主体包括介电材料；第一箔，所述第一箔在所述基板接收表面下方嵌入在所述主体中；导电网状物，所述导电网状物在所述第一箔下方嵌入在所述主体中；第二箔，所述第二箔在所述网状物与所述主体的底表面之间嵌入在所述主体中；以及中心接头结构，所述中心接头结构形成在所述底表面中，与所述网状物电连通。
在另一个实施方式中，提供了一种基板支撑件，所述基板支撑件包括：复合主体，所述复合主体具有基板接收表面，所述复合主体由介电材料组成，包括：第一箔，所述第一箔在所述基板接收表面下方嵌入在所述主体中；导电网状物，所述导电网状物在所述第一箔下方嵌入在所述主体中；中心接头结构，所述中心接头结构形成在所述主体的底表面中，与所述网状物电连通；支撑臂，所述支撑臂从所述主体的中心延伸，以悬臂方式支撑所述主体；接地电缆和温度传感器，所述接地电缆和所述温度传感器耦接到所述主体并以平行关系容纳在所述支撑臂内；以及介电构件，所述介电构件将所述接地电缆和所述温度传感器分开。
附图说明
为了能够详细地理解本公开内容的上述特征的方式，可通过参考实施方式获得上面简要地概述的本公开内容的更特定的描述，实施方式中的一些在附图中示出。然而，应当注意，附图仅示出了示例性实施方式，并且因此不应视为对范围的限制，因为本公开内容可以允许其它同等有效实施方式。
图1A是根据一个实施方式的沉积腔室的示意性截面图。
图1B是沿图1A的线1B-1B的沉积腔室的俯视平面图。
图2A是示出基板支撑件的一个实施方式的等距视图。
图2B是图2A的基板支撑件的分解图。
图3A是示出基板支撑件的另一个实施方式的等距视图。
图3B是图3A的基板支撑件的分解图。
图4A是基板支撑件的另一个实施方式的等距截面图。
图4B是图4A中所示的主体的一部分的放大横截面。
图5A是基板支撑件的另一个实施方式的等距截面图。
图5B示出了图5A中所示的主体的一部分的放大横截面。
图6A是主体和支撑臂的接口部分的分解局部截面图。
图6B是间隔构件和电缆导件的放大等距视图。
图6C是间隔构件和电缆导件的放大等距视图。
图6D示出了将接地电缆与温度传感器电缆电隔离的另一个实施方式。
图6E是图6D的介电构件中的一个的侧视图。
图7A是基板支撑件的等距底视图，示出了支撑臂的接口部分。
图7B是支撑臂的接口部分的放大视图。
图7C是从图7B中所示的视图旋转180度的介电盖的等距视图。
图8A是支撑臂的一个实施方式的等距视图。
图8B是沿图8A的线8B-8B的支撑臂的截面图。
图9A是基板支撑件的另一个实施方式的等距视图。
图9B是图9A的基板支撑件的另一个等距视图，示出了定心特征。
图9C是沿图9B的线9C-9C的定心特征中的一个的截面图。
图10A是图9A的基板支撑件的等距底视图。
图10B是图10A的基板支撑件的主体的底表面的放大视图。
为了便于理解，尽可能地使用相同的附图标记来表示各图共有的相同元件。预期的是，一个实施方式的元件和特征可以有利地并入其它实施方式中，而无需进一步叙述。
具体实施方式
图1A是沉积腔室100的示意性截面图。图1B是沿图1A的线1B-1B的沉积腔室100的俯视平面图。沉积腔室100包括容纳基板支撑件110的主体105。喷头或穿孔面板115定位在基板支撑件110上方。基板支撑件110还可支撑静电吸盘、真空吸盘或其它吸附装置以在处理期间将基板固定在其上。穿孔面板115分配来自气源120的气体，气体在由基板支撑件110支撑的基板(未示出)上形成膜。基板支撑件110以及定位在其上的基板由设置在基板支撑件110下方的灯头125加热。灯头125包括多个灯130。灯头125适于将基板支撑件110加热到约400摄氏度与约480摄氏度之间的温度。灯头125与腔室容积由光学透明板135分隔。
基板支撑件110至少部分地被环箍结构140包围，环箍结构140用于促成基板传送到及离开基板支撑件110。基板支撑件110耦接到适于在Z方向上相对于环箍结构140提升和降低基板支撑件110的马达145。例如，为了从基板支撑件110移除基板，降低基板支撑件110同时基板由环箍结构140悬置。此后，机器人叶片进入传送端口150(图1B所示)并从环箍结构140移除基板。
穿孔面板115耦接到电源155，诸如射频电源。穿孔面板115是导电金属材料，诸如铝，并且电源155使穿孔面板115通电以在穿孔面板115与接地的基板支撑件110之间产生等离子体。使穿孔面板115通电以形成等离子体通常在清洁工艺期间使用，其中清洁气体(诸如氯、氟或其它清洁气体)被分解成自由基物种以清洁沉积腔室100。经由围绕沉积腔室100的内部的泵送通道160将过量气体从沉积腔室100移除。终点检测装置165耦接到沉积腔室100。终点检测装置165是通过窗170观察沉积腔室100的内部的光学装置。
参考图1B，基板支撑件110是悬臂式的，并且耦接到支撑臂175。支撑臂175还包含电引线，诸如接地电缆以及温度传感器引线，两者将在下面被更详细地解释。
图2A是示出基板支撑件200的一个实施方式的等距视图。图2B是图2A的基板支撑件200的分解图。基板支撑件200可以用作图1A和1B的沉积腔室100中的基板支撑件110。
图3A是示出基板支撑件300的另一个实施方式的等距视图。图3B是图3A的基板支撑件300的分解图。基板支撑件300可以用作图1A和1B的沉积腔室100中的基板支撑件110。
基板支撑件200和基板支撑件300两者共有共同部件，其中存在至少一个不同之处。基板支撑件300包括背板305，而基板支撑件200不具有背板305。背板305是氧化铝材料。
基板支撑件200和基板支撑件300两者的共同部件包括具有多个凸起特征或突起204的基板接收表面202、支撑臂175、耦接到支撑臂175的中空轴205、接地电缆210和介电盖板215。利用间隔构件220和电缆导件225将温度传感器230容纳和/或引导到相应的基板支撑件200和基板支撑件300的主体235。利用紧固件240将各种部件彼此固定及/或固定到主体235。介电盖245定位在支撑臂175的接口部分250处。下面将更详细地描述这些部件中的许多部件。
图4A是基板支撑件400的另一个实施方式的等距截面图。基板支撑件400包括主体235，主体235可以是图2A和2B的基板支撑件200或图3A和3B的基板支撑件300的主体235。基板接收表面202被示出为具有多个突起204，其支撑基板(未示出)。另外，示出了中心接头405从主体235的底表面410延伸。中心接头405用于将接地电缆210(图2B和3B中所示)连接到主体235。
图4B示出了图4A中所示的主体235的一部分的放大横截面。主体235是陶瓷材料，诸如氮化铝(AlN)。主体235包括从主体235的上表面420凹陷的基板凹坑415。定位在基板凹坑415下方距离425处的是薄片或箔430。箔430是石墨材料。在一个实施方式中，距离425为约0.01英寸至约0.03英寸。在一个实施方式中，箔430的厚度435为约0.01英寸至约0.03英寸。由导热和/或导电材料(诸如钼(Mo))制成的网状物440定位在箔430的下方。
网状物440嵌入基本上是介电材料(例如，陶瓷)的主体235中并用作主体235内的电极。定位在基板凹坑415与网状物440之间的箔430用于增强在主体235内和/或在主体235上的温度分布。增强的温度均匀性增加定位在基板接收表面202上的基板的温度均匀性。
图5A是基板支撑件500的另一个实施方式的等距截面图。基板支撑件500包括主体235，主体235可以是图2A和2B的基板支撑件200或图3A和3B的基板支撑件300的主体235。基板接收表面202被示出为具有多个突起204，其支撑基板(未示出)。另外，示出了中心接头405从主体235的底表面410延伸。中心接头405用于将接地电缆210(图2B和3B中所示)连接到主体235。
图5B示出了图5A中所示的主体235的一部分的放大横截面。主体235是陶瓷材料，诸如氮化铝(AlN)。主体235包括从主体235的上表面420凹陷的基板凹坑415。定位在基板凹坑415下方距离425处的是第一薄片或箔505。第一箔505是石墨材料。距离425和/或箔505的厚度435可根据具体工艺而变。由导热材料(诸如钼(Mo))制成的网状物440定位在第一箔505的下方。第二薄片或箔510定位在网状物440的下方。第二箔510是含锆材料，诸如氧化锆(ZrO2)。第二箔510的厚度515以及第二箔510与主体235的底表面410的距离520可根据具体工艺而变化。
网状物440嵌入基本上是介电材料(例如，陶瓷)的主体235中并用作主体235内的电极。定位在基板凹坑415与网状物440之间的第一箔505用于增强主体235内和/或主体235上的温度分布。增强的温度均匀性增加定位在基板接收表面202上的基板的温度均匀性。第二箔510用作主体235的底表面410处的热障。第二箔510还可以增加基板支撑件500的主体235的寿命。
图6A是主体235和支撑臂175的接口部分250的分解局部截面图。图6A中所示的视图可以是本文所述的基板支撑件200、基板支撑件300或基板支撑件400中的任一个。支撑臂175的接口部分250的部分以虚线表示，以示出接地电缆210和温度传感器230的位置。
具体地，温度传感器230包括温度传感器电缆600，温度传感器电缆600在温度传感器230的传感器头605与中空轴205(图2A-3B中所示)之间在支撑臂175中或其上延伸。然而，温度传感器电缆600放置在接地电缆210的附近，接地电缆210也在中空轴205与中心接头405之间在支撑臂175中或沿其延伸。温度传感器电缆600与接地电缆210之间的这种邻近关系将噪声(例如，电磁干扰)引入温度传感器电缆600中。噪声可能干扰从温度传感器230接收的正常操作和/或信号。然而，间隔构件220和电缆导件225用于最小化或消除来自接地电缆210和温度传感器电缆600的噪声引入。
图6B和6C分别是间隔构件220和电缆导件225的放大等距视图。间隔构件220和电缆导件225都由介电材料制成，介电材料诸如陶瓷材料，例如氧化铝(AlO2)。间隔构件220是与电缆导件225对接的细长构件。电缆导件225包括形成在其中的沟槽610。沟槽610横穿弯曲部分615的内半径。沟槽610用作温度传感器电缆600和传感器头605的导件。沟槽610将温度传感器电缆600的方向调整约90度，使得传感器头605从支撑臂175的(水平)定向与主体235对接。
间隔构件220和电缆导件225均包括导电涂层620。例如，间隔构件220和电缆导件225的接近接地电缆210和温度传感器电缆600中的一个或两个的表面包括涂层620。涂层620可以是金(Au)、银(Ag)、硅(Si)、镍(Ni)或其它导电物质。涂层620用于改善间隔构件220和/或电缆导件225的接地。
图6D示出了将接地电缆210与温度传感器电缆600电隔离的另一个实施方式。在该实施方式中，图6A和6C的电缆导件225与多个介电构件625一起使用。多个介电构件625可用于代替图6A和6B中所示的间隔构件220。介电构件625中的每个基本上是环形的，如图6E所示。介电构件625中的每个包括中心开口630，其大小适于接收温度传感器电缆600。介电构件625中的每个可由陶瓷材料或石英材料制成。
图7A是基板支撑件700的等距底视图，示出了支撑臂175的接口部分250。图7A的基板支撑件700可以是本文所述的基板支撑件200、基板支撑件300或基板支撑件400中的任一个。
图7B是支撑臂175的接口部分250的放大视图。接口部分250的部分以虚线示出，以便示出介电盖245与支撑臂175的接口部分250的连接。
图7C是介电盖245的等距视图，其从图7B所示的视图旋转180度。介电盖245包括主体705，主体705具有形成在其中的一个或多个凹槽710。主体705还包括中心开口715。中心开口715包括弯曲部分720，该弯曲部分终止于径向取向的沟槽725。中心开口715、弯曲部分720和径向取向的沟槽725用作接地电缆210的导件。介电盖245由石英材料制成。介电盖245密封支撑臂175的接口部分250，以便防止诸如氟和/或氯自由基的清洁气体进入而到达接地电缆210和中心接头405的连接处。通常，接地电缆210通过钎焊接合头(joint)耦接到中心接头405，而清洁气体倾向于穿透该钎焊接合头并还可能使接地电缆210所连接的网状物440(图4B和5B中所示)劣化。然而，介电盖245防止自由基进入支撑臂175的接口部分250，这增加了基板支撑件700的寿命。
图8A是支撑臂175的一个实施方式的等距视图。图8B是沿线8B-8B的支撑臂175的截面图。支撑臂175包括沿通道810的长度805形成的沟槽800。沟槽800还至少部分地延伸到安装部分815的表面中。安装部分815在支撑臂175的与支撑臂175的接口部分250相对的一侧上。在图8B中，接地电缆210、介电盖板215、间隔构件220和温度传感器230以虚线示出。
如图8B所示，沟槽800包括大沟槽820A和小沟槽820B。小沟槽820B使大沟槽820A分叉。支撑臂175还包括通道810的第一或内表面825。第二或凹陷表面832形成在通道810的两侧中的内表面825中。大沟槽820A的大小适于接收接地电缆210(也在图2B、3B和6B中示出)。凹陷表面832的大小适于接收介电盖板215(也在图2B、3B和6B中示出)。
沟槽800的至少一部分包括涂层830。例如，涂层830设在大沟槽820A上。涂层830可以是金(Au)、银(Ag)、硅(Si)、镍(Ni)或其它导电物质。涂层830用于改善接地电缆210的接地性能。
图9A是基板支撑件900的另一个实施方式的等距视图。基板支撑件900可以用作图1A和1B的沉积腔室100中的基板支撑件110。基板支撑件900包括在主体235的下表面上的网状物440。网状物440用于辅助主体235的接地。基板支撑件900还包括围绕主体235的周边定位的多个定心特征905。图9A中还示出了连接构件，其被示出为插件906、孔眼907和插塞908。插件906耦接到形成在主体235的与基板接收表面202相对的面中的开口(未示出)。同样，孔眼907耦接到形成在主体235的与基板接收表面202相对的面中的开口(未示出)，诸如图5A中所示的中心接头405。插塞908也耦接到形成在主体235的与基板接收表面202相对的面中的开口(未示出)。图10B中描述了用于插件906、孔眼907和插塞908的开口的细节。
用于基板支撑件900的主体235的基础材料包括石墨、氮化铝(AlN)、碳化硅(SiC)、氟化镁或其它合适的材料。任何上述基础材料都可以涂覆有SiC(例如，具有SiC涂层的石墨)、硅(例如，具有硅涂层的石墨)、二氧化硅(例如，具有二氧化硅涂层的石墨或具有二氧化硅涂层的SiC)、氧化镧涂层、或以上项的组合。
图9B是基板支撑件900的另一个等距视图，更清楚地示出了定心特征905。示出了穿过主体235形成的多个开口910。开口910中的每个的大小适于接收升降杆(未示出)，所述升降杆便于在机器人叶片(未示出)与基板支撑件900的基板接收表面202之间传送基板。当基板被传送到基板支撑表面202时，定心特征905用于使基板相对于基板接收表面202居中。
除了间隙915之外，定心特征905以大体上对称的方式定位在主体235上。间隙915用于允许机器人叶片(未示出)从相邻的定心特征905之间通过。
图9C是沿图9B的线9C-9C的定心特征905中的一个的截面图。定心特征905包括从主体235的底表面925和突出部分935的上表面930测量的高度920。突出部分935包括将上表面930连结到基板接收表面202的成角度的表面940。成角度的表面940用作便于使基板定心的导件。
定心特征905的高度920可以是约1mm至约2.3mm。图9B中所示的定心特征905中的每个的高度920可以变化。例如，定心特征905中的一个的高度920可以大于相邻的定心特征905的高度920。在该示例中，如图9B所示，定心特征905中的两个(被示出为特征945)的高度小于其余定心特征905的高度。定心特征905的不均匀高度使得平坦基板以及具有轻微弯曲的基板(例如，翘曲基板)的定心成为可能。
图10A是图9A的基板支撑件900的等距底视图。网状物440未在图10A中示出。图10B是基板支撑件900的主体235的底表面1000的放大视图。
所示的孔眼907耦接到中心接头405。孔眼907可以拧入中心接头405。孔眼907由导电材料制成，诸如镍。孔眼907还可以涂覆有金(Au)或银(Ag)，以增加接地电缆210(未示出)与主体235之间的导电性。
插件906被示出为设在开口1005中。插件906具有中心开口1015，以用作支撑臂175(未示出)的安装接口。底表面1000还包括用于温度传感器230(未示出)的锥形开口1010。孔眼907还包括中心开口1020，其大小适于接收接地电缆210(未示出)。接地电缆210经由螺纹连接1025附接到孔眼907。
本公开内容的实施方式包括用于等离子体腔室中的基板支撑件的方法和设备。基板支撑件使其上的温度分布变得均匀。基板支撑件还最小化来自电场的干扰，这最大化基板支撑件的温度监测。

Claims (20)

1.一种基板支撑件，包括：
主体，所述主体具有基板接收表面，所述主体包括介电材料；
第一箔，所述第一箔在所述基板接收表面下方嵌入在所述主体中；
导电网状物，所述导电网状物在所述第一箔下方嵌入在所述主体中；以及
中心接头结构，所述中心接头结构形成在所述主体的底表面中，与所述网状物电连通。
2.如权利要求1所述的基板支撑件，进一步包括：
第二箔，所述第二箔在所述网状物与所述底表面之间嵌入在所述主体中。
3.如权利要求1所述的基板支撑件，其中所述主体以悬臂方式耦接到支撑臂。
4.如权利要求3所述的基板支撑件，其中所述支撑臂包含耦接到所述中心接头结构和中空轴的接地电缆。
5.如权利要求4所述的基板支撑件，其中所述支撑臂包含耦接在所述主体与所述中空轴之间的温度传感器。
6.如权利要求5所述的基板支撑件，其中所述支撑臂包括间隔构件，所述间隔构件定位在所述温度传感器与所述接地电缆之间。
7.如权利要求6所述的基板支撑件，其中所述间隔构件包括细长构件，所述细长构件包括介电材料。
8.如权利要求6所述的基板支撑件，其中所述间隔构件包括多个介电构件。
9.如权利要求3所述的基板支撑件，进一步包括电缆导件，所述电缆导件定位在所述支撑臂与所述主体之间。
10.如权利要求1所述的基板支撑件，其中所述主体包括多个定心特征。
11.一种基板支撑件，包括：
主体，所述主体具有基板接收表面，所述主体包括介电材料；
第一箔，所述第一箔在所述基板接收表面下方嵌入在所述主体中；
导电网状物，所述导电网状物在所述第一箔下方嵌入在所述主体中；
第二箔，所述第二箔在所述网状物与所述主体的底表面之间嵌入在所述主体中；以及
中心接头结构，所述中心接头结构形成在所述底表面中，与所述网状物电连通。
12.如权利要求11所述的基板支撑件，其中所述主体以悬臂方式耦接到支撑臂。
13.如权利要求12所述的基板支撑件，其中所述支撑臂包含耦接到所述中心接头结构和中空轴的接地电缆。
14.如权利要求13所述的基板支撑件，其中所述支撑臂包含耦接在所述主体与所述中空轴之间的温度传感器。
15.如权利要求14所述的基板支撑件，其中所述支撑臂包括间隔构件，所述间隔构件定位在所述温度传感器与所述接地电缆之间。
16.如权利要求15所述的基板支撑件，其中所述间隔构件包括细长构件，所述细长构件包括介电材料。
17.如权利要求15所述的基板支撑件，其中所述间隔构件包括多个介电构件。
18.如权利要求12所述的基板支撑件，进一步包括电缆导件，所述电缆导件定位在所述支撑臂与所述主体之间。
19.一种基板支撑件，包括：
复合主体，所述复合主体具有基板接收表面，所述复合主体由介电材料组成，包括：
第一箔，所述第一箔在所述基板接收表面下方嵌入在所述主体中；
导电网状物，所述导电网状物在所述第一箔下方嵌入在所述主体中；
中心接头结构，所述中心接头结构形成在所述主体的底表面中，与所述网状物电连通；
支撑臂，所述支撑臂从所述主体的中心延伸，以悬臂方式支撑所述主体；
接地电缆和温度传感器，所述接地电缆和所述温度传感器耦接到所述主体并以平行关系容纳在所述支撑臂内；以及
介电构件，所述介电构件将所述接地电缆和所述温度传感器分开。
20.如权利要求19所述的基板支撑件，其中所述主体包括多个定心特征，所述多个定心特征围绕所述基板接收表面的周边定位。
CN201910717056.1A 2018-10-24 2019-08-05 用于沉积腔室的基板支撑件设计 Pending CN111092043A (zh)

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