TWI817623B - 用於沉積腔室的基板支撐件設計 - Google Patents

用於沉積腔室的基板支撐件設計 Download PDF

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TWI817623B
TWI817623B TW111127486A TW111127486A TWI817623B TW I817623 B TWI817623 B TW I817623B TW 111127486 A TW111127486 A TW 111127486A TW 111127486 A TW111127486 A TW 111127486A TW I817623 B TWI817623 B TW I817623B
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寇胥克 拉奧
高芬達 瑞吉
安盧比夫 史維史達瓦
桑多西庫瑪 皮拉帕
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美商應用材料股份有限公司
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Abstract

本公開內容大體涉及一種基板支撐件，該基板支撐件包括主體，該主體具有基板接收表面，該主體包括介電材料。該主體還包括第一箔，該第一箔在該基板接收表面下方嵌入在該主體中。該主體還包括導電網狀物，該導電網狀物在該第一箔下方嵌入在該主體中。該主體還包括中心接頭結構，該中心接頭結構形成在該主體的底表面中，與該網狀物電連通。

Description

用於沉積腔室的基板支撐件設計
本公開內容大體涉及用於在沉積腔室中支撐基板的基板支撐件(諸如基座或靜電吸附裝置)的設備和方法。
積體電路已發展成複雜裝置，其可以在單個晶圓上包括數百萬個部件(例如，電晶體、電容器、電阻器及類似部件)。晶圓設計的發展需要更快的電路以及更大的電路密度，而對更大的電路密度的需求需要減小積體電路部件的尺寸。例如，超大規模集成(ULSI)電路裝置可以包括形成在半導體基板(諸如矽(Si)基板)上的超過一百萬個電子裝置(例如，電晶體)，這些電子裝置協作以執行裝置內的各種功能。
靜電吸盤或ESC通常用於將基板保持在沉積或蝕刻腔室內的基板支撐件上以形成這些裝置。在基板上提供均勻的膜沉積的基板的溫度均勻性受基板支撐件的溫度的影響。通常，ESC耦接到接地電位。然而，來自接地的電磁能量可能不利地影響溫度監測裝置操作。另外，腔室清潔製程通常使用對ESC硬體有腐蝕性的氣體，這會縮短ESC的使用壽命。
需要的是一種可減輕上述一個或多個問題的方法和設備。
本公開內容大體涉及一種基板支撐件，所述基板支撐件包括主體，所述主體具有基板接收表面，所述主體包括介電材料。所述主體還包括第一箔，所述第一箔在所述基板接收表面下方嵌入在所述主體中。所述主體還包括導電網狀物，所述導電網狀物在所述第一箔下方嵌入在所述主體中。所述主體還包括中心接頭(tap)結構，所述中心接頭結構形成在所述主體的底表面中，與所述網狀物電連通。
在另一個實施方式中，提供了一種基板支撐件，所述基板支撐件包括：主體，所述主體具有基板接收表面，所述主體包括介電材料；第一箔，所述第一箔在所述基板接收表面下方嵌入在所述主體中；導電網狀物，所述導電網狀物在所述第一箔下方嵌入在所述主體中；第二箔，所述第二箔在所述網狀物與所述主體的底表面之間嵌入在所述主體中；以及中心接頭結構，所述中心接頭結構形成在所述底表面中，與所述網狀物電連通。
在另一個實施方式中，提供了一種基板支撐件，所述基板支撐件包括：複合主體，所述複合主體具有基板接收表面，所述複合主體由介電材料組成，包括：第一箔，所述第一箔在所述基板接收表面下方嵌入在所述主體中；導電網狀物，所述導電網狀物在所述第一箔下方嵌入在所述主體中；中心接頭結構，所述中心接頭結構形成在所述主體的底表面中，與所述網狀物電連通；支撐臂，所述支撐臂從所述主體的中心延伸，以懸臂方式支撐所述主體；接地電纜和溫度感測器，所述接地電纜和所述溫度感測器耦接到所述主體並以平行關係容納在所述支撐臂內；以及介電構件，所述介電構件將所述接地電纜和所述溫度感測器分開。
圖1A是沉積腔室100的示意性截面圖。圖1B是沿圖1A的線1B-1B的沉積腔室100的俯視平面圖。沉積腔室100包括容納基板支撐件110的主體105。噴頭或穿孔面板115定位在基板支撐件110上方。基板支撐件110還可支撐靜電吸盤、真空吸盤或其它吸附裝置以在處理期間將基板固定在其上。穿孔面板115分配來自氣源120的氣體，氣體在由基板支撐件110支撐的基板(未示出)上形成膜。基板支撐件110以及定位在其上的基板由設置在基板支撐件110下方的燈頭125加熱。燈頭125包括多個燈130。燈頭125適於將基板支撐件110加熱到約攝氏400度與約攝氏480度之間的溫度。燈頭125與腔室容積由光學透明板135分隔。
基板支撐件110至少部分地被環箍結構140包圍，環箍結構140用於促成基板傳送到及離開基板支撐件110。基板支撐件110耦接到適於在Z方向上相對於環箍結構140提升和降低基板支撐件110的馬達145。例如，為了從基板支撐件110移除基板，降低基板支撐件110同時基板由環箍結構140懸置。此後，機器人葉片進入傳送埠150(圖1B所示)並從環箍結構140移除基板。
穿孔面板115耦接到電源155，諸如射頻電源。穿孔面板115是導電金屬材料，諸如鋁，並且電源155使穿孔面板115通電以在穿孔面板115與接地的基板支撐件110之間產生電漿。使穿孔面板115通電以形成電漿通常在清潔製程期間使用，其中清潔氣體(諸如氯、氟或其它清潔氣體)被分解成自由基物種以清潔沉積腔室100。經由圍繞沉積腔室100的內部的泵送通道160將過量氣體從沉積腔室100移除。終點偵測裝置165耦接到沉積腔室100。終點偵測裝置165是通過窗170觀察沉積腔室100的內部的光學裝置。
參考圖1B，基板支撐件110是懸臂式的，並且耦接到支撐臂175。支撐臂175還包含電引線，諸如接地電纜以及溫度感測器引線，兩者將在下面被更詳細地解釋。
圖2A是示出基板支撐件200的一個實施方式的等距視圖。圖2B是圖2A的基板支撐件200的分解圖。基板支撐件200可以用作圖1A和1B的沉積腔室100中的基板支撐件110。
圖3A是示出基板支撐件300的另一個實施方式的等距視圖。圖3B是圖3A的基板支撐件300的分解圖。基板支撐件300可以用作圖1A和1B的沉積腔室100中的基板支撐件110。
基板支撐件200和基板支撐件300兩者共有共同部件，其中存在至少一個不同之處。基板支撐件300包括背板305，而基板支撐件200不具有背板305。背板305是氧化鋁材料。
基板支撐件200和基板支撐件300兩者的共同部件包括具有多個凸起特徵或突起204的基板接收表面202、支撐臂175、耦接到支撐臂175的中空軸205、接地電纜210和介電蓋板215。利用間隔構件220和電纜導件225將溫度感測器230容納和/或引導到相應的基板支撐件200和基板支撐件300的主體235。利用緊固件240將各種部件彼此固定及/或固定到主體235。介電蓋245定位在支撐臂175的介面部分250處。下面將更詳細地描述這些部件中的許多部件。
圖4A是基板支撐件400的另一個實施方式的等距截面圖。基板支撐件400包括主體235，主體235可以是圖2A和2B的基板支撐件200或圖3A和3B的基板支撐件300的主體235。基板接收表面202被示出為具有多個突起204，其支撐基板(未示出)。另外，示出了中心接頭405從主體235的底表面410延伸。中心接頭405用於將接地電纜210(圖2B和3B中所示)連接到主體235。
圖4B示出了圖4A中所示的主體235的一部分的放大橫截面。主體235是陶瓷材料，諸如氮化鋁(AlN)。主體235包括從主體235的上表面420凹陷的基板凹坑415。定位在基板凹坑415下方距離425處的是薄片或箔430。箔430是石墨材料。在一個實施方式中，距離425為約0.01英寸至約0.03英寸。在一個實施方式中，箔430的厚度435為約0.01英寸至約0.03英寸。由導熱和/或導電材料(諸如鉬(Mo))製成的網狀物440定位在箔430的下方。
網狀物440嵌入基本上是介電材料(例如，陶瓷)的主體235中並用作主體235內的電極。定位在基板凹坑415與網狀物440之間的箔430用於增強在主體235內和/或在主體235上的溫度分佈。增強的溫度均勻性增加定位在基板接收表面202上的基板的溫度均勻性。
圖5A是基板支撐件500的另一個實施方式的等距截面圖。基板支撐件500包括主體235，主體235可以是圖2A和2B的基板支撐件200或圖3A和3B的基板支撐件300的主體235。基板接收表面202被示出為具有多個突起204，其支撐基板(未示出)。另外，示出了中心接頭405從主體235的底表面410延伸。中心接頭405用於將接地電纜210(圖2B和3B中所示)連接到主體235。
圖5B示出了圖5A中所示的主體235的一部分的放大橫截面。主體235是陶瓷材料，諸如氮化鋁(AlN)。主體235包括從主體235的上表面420凹陷的基板凹坑415。定位在基板凹坑415下方距離425處的是第一薄片或箔505。第一箔505是石墨材料。距離425和/或箔505的厚度435可根據具體製程而變。由導熱材料(諸如鉬(Mo))製成的網狀物440定位在第一箔505的下方。第二薄片或箔510定位在網狀物440的下方。第二箔510是含鋯材料，諸如氧化鋯(ZrO 2)。第二箔510的厚度515以及第二箔510與主體235的底表面410的距離520可根據具體製程而變化。
網狀物440嵌入基本上是介電材料(例如，陶瓷)的主體235中並用作主體235內的電極。定位在基板凹坑415與網狀物440之間的第一箔505用於增強主體235內和/或主體235上的溫度分佈。增強的溫度均勻性增加定位在基板接收表面202上的基板的溫度均勻性。第二箔510用作主體235的底表面410處的熱障。第二箔510還可以增加基板支撐件500的主體235的壽命。
圖6A是主體235和支撐臂175的介面部分250的分解局部截面圖。圖6A中所示的視圖可以是本文所述的基板支撐件200、基板支撐件300或基板支撐件400中的任一個。支撐臂175的介面部分250的部分以虛線表示，以示出接地電纜210和溫度感測器230的位置。
具體地，溫度感測器230包括溫度感測器電纜600，溫度感測器電纜600在溫度感測器230的感測器頭605與中空軸205(圖2A-3B中所示)之間在支撐臂175中或其上延伸。然而，溫度感測器電纜600放置在接地電纜210的附近，接地電纜210也在中空軸205與中心接頭405之間在支撐臂175中或沿其延伸。溫度感測器電纜600與接地電纜210之間的這種鄰近關係將雜訊(例如，電磁干擾)引入溫度感測器電纜600中。雜訊可能干擾從溫度感測器230接收的正常操作和/或信號。然而，間隔構件220和電纜導件225用於最小化或減弱來自接地電纜210和溫度感測器電纜600的雜訊引入。
圖6B和6C分別是間隔構件220和電纜導件225的放大等距視圖。間隔構件220和電纜導件225都由介電材料製成，介電材料諸如陶瓷材料，例如氧化鋁(AlO 2)。間隔構件220是與電纜導件225對接的細長構件。電纜導件225包括形成在其中的溝槽610。溝槽610橫穿彎曲部分615的內半徑。溝槽610用作溫度感測器電纜600和感測器頭605的導件。溝槽610將溫度感測器電纜600的方向調整約90度，使得感測器頭605從支撐臂175的(水平)定向與主體235對接。
間隔構件220和電纜導件225均包括導電塗層620。例如，間隔構件220和電纜導件225的接近接地電纜210和溫度感測器電纜600中的一個或兩個的表面包括塗層620。塗層620可以是金(Au)、銀(Ag)、矽(Si)、鎳(Ni)或其它導電物質。塗層620用於改善間隔構件220和/或電纜導件225的接地。
圖6D示出了將接地電纜210與溫度感測器電纜600電隔離的另一個實施方式。在該實施方式中，圖6A和6C的電纜導件225與多個介電構件625一起使用。多個介電構件625可用於代替圖6A和6B中所示的間隔構件220。介電構件625中的每個基本上是環形的，如圖6E所示。介電構件625中的每個包括中心開口630，其大小適於接收溫度感測器電纜600。介電構件625中的每個可由陶瓷材料或石英材料製成。
圖7A是基板支撐件700的等距底視圖，示出了支撐臂175的介面部分250。圖7A的基板支撐件700可以是本文所述的基板支撐件200、基板支撐件300或基板支撐件400中的任一個。
圖7B是支撐臂175的介面部分250的放大視圖。介面部分250的部分以虛線示出，以便示出介電蓋245與支撐臂175的介面部分250的連接。
圖7C是介電蓋245的等距視圖，其從圖7B所示的視圖旋轉180度。介電蓋245包括主體705，主體705具有形成在其中的一個或多個凹槽710。主體705還包括中心開口715。中心開口715包括彎曲部分720，該彎曲部分終止於徑向取向的溝槽725。中心開口715、彎曲部分720和徑向取向的溝槽725用作接地電纜210的導件。介電蓋245由石英材料製成。介電蓋245密封支撐臂175的介面部分250，以便防止諸如氟和/或氯自由基的清潔氣體進入而到達接地電纜210和中心接頭405的連接處。通常，接地電纜210通過釺焊接合頭(joint)耦接到中心接頭405，而清潔氣體傾向於穿透該釺焊接合頭並還可能使接地電纜210所連接的網狀物440(圖4B和5B中所示)劣化。然而，介電蓋245防止自由基進入支撐臂175的介面部分250，這增加了基板支撐件700的壽命。
圖8A是支撐臂175的一個實施方式的等距視圖。圖8B是沿線8B-8B的支撐臂175的截面圖。支撐臂175包括沿通道810的長度805形成的溝槽800。溝槽800還至少部分地延伸到安裝部分815的表面中。安裝部分815在支撐臂175的與支撐臂175的介面部分250相對的一側上。在圖8B中，接地電纜210、介電蓋板215、間隔構件220和溫度感測器230以虛線示出。
如圖8B所示，溝槽800包括大溝槽820A和小溝槽820B。小溝槽820B使大溝槽820A分叉。支撐臂175還包括通道810的第一或內表面825。第二或凹陷表面832形成在通道810的兩側中的內表面825中。大溝槽820A的大小適於接收接地電纜210(也在圖2B、3B和6B中示出)。凹陷表面832的大小適於接收介電蓋板215(也在圖2B、3B和6B中示出)。
溝槽800的至少一部分包括塗層830。例如，塗層830設在大溝槽820A上。塗層830可以是金(Au)、銀(Ag)、矽(Si)、鎳(Ni)或其它導電物質。塗層830用於改善接地電纜210的接地效能。
圖9A是基板支撐件900的另一個實施方式的等距視圖。基板支撐件900可以用作圖1A和1B的沉積腔室100中的基板支撐件110。基板支撐件900包括在主體235的下表面上的網狀物440。網狀物440用於輔助主體235的接地。基板支撐件900還包括圍繞主體235的周邊定位的多個定心特徵905。圖9A中還示出了連接構件，其被示出為外掛程式906、孔眼907和插塞908。外掛程式906耦接到形成在主體235的與基板接收表面202相對的面中的開口(未示出)。同樣，孔眼907耦接到形成在主體235的與基板接收表面202相對的面中的開口(未示出)，諸如圖5A中所示的中心接頭405。插塞908也耦接到形成在主體235的與基板接收表面202相對的面中的開口(未示出)。圖10B中描述了用於外掛程式906、孔眼907和插塞908的開口的細節。
用於基板支撐件900的主體235的基礎材料包括石墨、氮化鋁(AlN)、碳化矽(SiC)、氟化鎂或其它合適的材料。任何上述基礎材料都可以塗覆有SiC(例如，具有SiC塗層的石墨)、矽(例如，具有矽塗層的石墨)、二氧化矽(例如，具有二氧化矽塗層的石墨或具有二氧化矽塗層的SiC)、氧化鑭塗層、或以上項的組合。
圖9B是基板支撐件900的另一個等距視圖，更清楚地示出了定心特徵905。示出了穿過主體235形成的多個開口910。開口910中的每個的大小適於接收升降桿(未示出)，所述升降桿便於在機器人葉片(未示出)與基板支撐件900的基板接收表面202之間傳送基板。當基板被傳送到基板接收表面202時，定心特徵905用於使基板相對於基板接收表面202居中。
除了間隙915之外，定心特徵905以大體上對稱的方式定位在主體235上。間隙915用於允許機器人葉片(未示出)從相鄰的定心特徵905之間通過。
圖9C是沿圖9B的線9C-9C的定心特徵905中的一個的截面圖。定心特徵905包括從主體235的底表面925和突出部分935的上表面930測量的高度920。突出部分935包括將上表面930連結到基板接收表面202的成角度的表面940。成角度的表面940用作便於使基板定心的導件。
定心特徵905的高度920可以是約1mm至約2.3mm。圖9B中所示的定心特徵905中的每個的高度920可以變化。例如，定心特徵905中的一個的高度920可以大於相鄰的定心特徵905的高度920。在該示例中，如圖9B所示，定心特徵905中的兩個(被示出為特徵945)的高度小於其餘定心特徵905的高度。定心特徵905的不均勻高度使得平坦基板以及具有輕微彎曲的基板(例如，翹曲基板)的定心成為可能。
圖10A是圖9A的基板支撐件900的等距底視圖。網狀物440未在圖10A中示出。圖10B是基板支撐件900的主體235的底表面1000的放大視圖。
所示的孔眼907耦接到中心接頭405。孔眼907可以擰入中心接頭405。孔眼907由導電材料製成，諸如鎳。孔眼907還可以塗覆有金(Au)或銀(Ag)，以增加接地電纜210(未示出)與主體235之間的導電性。
外掛程式906被示出為設在開口1005中。外掛程式906具有中心開口1015，以用作支撐臂175(未示出)的安裝介面。底表面1000還包括用於溫度感測器230(未示出)的錐形開口1010。孔眼907還包括中心開口1020，其大小適於接收接地電纜210(未示出)。接地電纜210經由螺紋連接1025附接到孔眼907。
本公開內容的實施方式包括用於電漿腔室中的基板支撐件的方法和設備。基板支撐件使其上的溫度分佈變得均勻。基板支撐件還最小化來自電場的干擾，這最大化基板支撐件的溫度監測。
100:沉積腔室 105:主體 110:基板支撐件 115:穿孔面板 120:氣源 125:燈頭 130:燈 135:光學透明板 140:環箍結構 145:馬達 150:埠 155:電源 160:泵送通道 165:終點偵測裝置 170:窗 175:支撐臂 200:基板支撐件 202:基板接收表面 204:突起 205:中空軸 210:接地電纜 215:介電蓋板 220:間隔構件 225:電纜導件 230:溫度感測器 235:主體 240:緊固件 245:介電蓋 250:介面部分 300:基板支撐件 305:背板 400:基板支撐件 405:中心接頭 410:底表面 415:基板凹坑 420:上表面 425:距離 430:箔 435:厚度 440:網狀物 500:基板支撐件 505:第一箔 510:第二箔 515:厚度 520:距離 600:溫度感測器電纜 605:感測器頭 610:溝槽 615:彎曲部分 620:導電塗層 625:介電構件 630:中心開口 700:基板支撐件 705:主體 710:凹槽 715:中心開口 720:彎曲部分 725:溝槽 800:溝槽 805:長度 810:通道 815:安裝部分 820A:大溝槽 820B:小溝槽 825:第一或內表面 830:塗層 832:第二或凹陷表面 900:基板支撐件 905:定心特徵 906:外掛程式 907:孔眼 908:插塞 910:開口 915:間隙 920:高度 925:底表面 930:上表面 935:突出部分 940:成角度的表面 945:特徵 1000:底表面 1005:開口 1010:錐形開口 1015:中心開口 1020:中心開口 1025:螺紋連接
為了能夠詳細地理解本公開內容的上述特徵的方式，可通過參考實施方式獲得上面簡要地概述的本公開內容的更特定的描述，實施方式中的一些在附圖中示出。然而，應當注意，附圖僅示出了示例性實施方式，並且因此不應視為對範圍的限制，因為本公開內容可以允許其它同等有效實施方式。
圖1A是根據一個實施方式的沉積腔室的示意性截面圖。
圖1B是沿圖1A的線1B-1B的沉積腔室的俯視平面圖。
圖2A是示出基板支撐件的一個實施方式的等距視圖。
圖2B是圖2A的基板支撐件的分解圖。
圖3A是示出基板支撐件的另一個實施方式的等距視圖。
圖3B是圖3A的基板支撐件的分解圖。
圖4A是基板支撐件的另一個實施方式的等距截面圖。
圖4B是圖4A中所示的主體的一部分的放大橫截面。
圖5A是基板支撐件的另一個實施方式的等距截面圖。
圖5B示出了圖5A中所示的主體的一部分的放大橫截面。
圖6A是主體和支撐臂的介面部分的分解局部截面圖。
圖6B是間隔構件和電纜導件的放大等距視圖。
圖6C是間隔構件和電纜導件的放大等距視圖。
圖6D示出了將接地電纜與溫度感測器電纜電隔離的另一個實施方式。
圖6E是圖6D的介電構件中的一個的側視圖。
圖7A是基板支撐件的等距底視圖，示出了支撐臂的介面部分。
圖7B是支撐臂的介面部分的放大視圖。
圖7C是從圖7B中所示的視圖旋轉180度的介電蓋的等距視圖。
圖8A是支撐臂的一個實施方式的等距視圖。
圖8B是沿圖8A的線8B-8B的支撐臂的截面圖。
圖9A是基板支撐件的另一個實施方式的等距視圖。
圖9B是圖9A的基板支撐件的另一個等距視圖，示出了定心特徵。
圖9C是沿圖9B的線9C-9C的定心特徵中的一個的截面圖。
圖10A是圖9A的基板支撐件的等距底視圖。
圖10B是圖10A的基板支撐件的主體的底表面的放大視圖。
為了便於理解，儘可能地使用相同的附圖標記來表示各圖共有的相同元件。預期的是，一個實施方式的元件和特徵可以有利地併入其它實施方式中，而無需進一步敘述。
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無
175:支撐臂
200:基板支撐件
205:中空軸
210:接地電纜
215:介電蓋板
220:間隔構件
225:電纜導件
230:溫度感測器
235:主體
240:緊固件
245:介電蓋

Claims (20)

  1. 一種基板支撐件，包括：一主體，該主體具有一上表面和一底表面，該上表面被配置成接收一基板，該主體包括一介電材料；一箔，該箔在該上表面與該底表面之間嵌入在該主體中；一導電網狀物，該導電網狀物在該上表面與該底表面之間嵌入在該主體中；以及一中心接頭結構，該中心接頭結構形成在該主體的該底表面中，與該導電網狀物電連通。
  2. 如請求項1所述之基板支撐件，其中該主體以一懸臂方式耦接到一支撐臂。
  3. 如請求項2所述之基板支撐件，其中該支撐臂包含一接地電纜和一中空軸，該接地電纜耦接到該中心接頭結構。
  4. 如請求項3所述之基板支撐件，其中該支撐臂包含一溫度感測器，該溫度感測器耦接在該主體與該中空軸之間。
  5. 如請求項4所述之基板支撐件，其中該支撐臂包括一間隔構件，該間隔構件定位在該溫度感測器與該接地電纜之間。
  6. 如請求項5所述之基板支撐件，其中該間隔構件包括一細長構件，該細長構件包括一介電材料。
  7. 如請求項5所述之基板支撐件，其中該間隔 構件包括多個介電構件。
  8. 如請求項1所述之基板支撐件，其中該箔定位在該導電網狀物與該主體的該上表面之間。
  9. 如請求項1所述之基板支撐件，其中該主體包括多個定心特徵。
  10. 一種基板支撐件，包括：一主體，該主體具有一上表面和一底表面，該上表面被配置成接收一基板，該主體包括一介電材料；一第一箔，該第一箔在該上表面與該底表面之間嵌入在該主體中；一導電網狀物，該導電網狀物嵌入在該上表面與該底表面之間；一第二箔，該第二箔在該上表面與該底表面之間嵌入在該主體中；以及一中心接頭結構，該中心接頭結構形成在該底表面中，與該導電網狀物電連通。
  11. 如請求項10所述之基板支撐件，其中該主體以一懸臂方式耦接到一支撐臂。
  12. 如請求項11所述之基板支撐件，其中該支撐臂包含一接地電纜和一中空軸，該接地電纜耦接到該中心接頭結構。
  13. 如請求項12所述之基板支撐件，其中該支撐臂包含一溫度感測器，該溫度感測器耦接在該主體與該中空軸之間。
  14. 如請求項13所述之基板支撐件，其中該支撐臂包括一間隔構件，該間隔構件定位在該溫度感測器與該接地電纜之間。
  15. 如請求項14所述之基板支撐件，其中該間隔構件包括一細長構件，該細長構件包括一介電材料。
  16. 如請求項11所述之基板支撐件，其中該第一箔定位在該導電網狀物與該主體的該上表面之間。
  17. 如請求項16所述之基板支撐件，其中該第二箔定位在該導電網狀物與該主體的該底表面之間。
  18. 一種基板支撐件，包括：一複合主體，該複合主體具有一上表面和一底表面，該上表面被配置成接收一基板，該複合主體由一介電材料組成，包括：一箔，該箔在該上表面與該底表面之間嵌入在該複合主體中；一導電網狀物，該導電網狀物在該上表面與該底表面之間嵌入在該複合主體中；一中心接頭結構，該中心接頭結構形成在該複合主體的該底表面中，與該導電網狀物電連通；一支撐臂，該支撐臂從該複合主體的一中心延伸，以一懸臂方式支撐該複合主體；一接地電纜和一溫度感測器，該接地電纜和該溫度感測器耦接到該複合主體並以一平行關係容納在該支撐臂內；以及 一介電構件，該介電構件將該接地電纜和該溫度感測器分開。
  19. 如請求項18所述之基板支撐件，其中該複合主體包括多個定心特徵，該多個定心特徵圍繞該上表面的一周邊定位。
  20. 如請求項18所述之基板支撐件，其中該箔定位在該導電網狀物與該複合主體的該上表面之間。
TW111127486A 2018-10-24 2019-08-14 用於沉積腔室的基板支撐件設計 TWI817623B (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5522937A (en) * 1994-05-03 1996-06-04 Applied Materials, Inc. Welded susceptor assembly
US20080138645A1 (en) * 2006-10-06 2008-06-12 Ngk Insulators, Ltd. Substrate supporting member
US20150076135A1 (en) * 2013-09-16 2015-03-19 Applied Materials, Inc. Heated substrate support with temperature profile control

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6067222A (en) * 1998-11-25 2000-05-23 Applied Materials, Inc. Substrate support apparatus and method for fabricating same
US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
CN100383213C (zh) * 2004-04-02 2008-04-23 清华大学 一种热界面材料及其制造方法
US20050274324A1 (en) * 2004-06-04 2005-12-15 Tokyo Electron Limited Plasma processing apparatus and mounting unit thereof
US20080190364A1 (en) * 2007-02-13 2008-08-14 Applied Materials, Inc. Substrate support assembly
JP2009149964A (ja) * 2007-12-22 2009-07-09 Tokyo Electron Ltd 載置台構造及び熱処理装置
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5396353B2 (ja) * 2009-09-17 2014-01-22 日本碍子株式会社 静電チャック及びその製法
US10177014B2 (en) * 2012-12-14 2019-01-08 Applied Materials, Inc. Thermal radiation barrier for substrate processing chamber components
CN108022852B (zh) * 2016-11-01 2020-08-07 中微半导体设备(上海)股份有限公司 Icp刻蚀机台及其绝缘窗口薄膜加热器装置和温度控制方法
US20210375658A1 (en) * 2018-10-24 2021-12-02 Applied Materials, Inc. Substrate support designs for a deposition chamber

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5522937A (en) * 1994-05-03 1996-06-04 Applied Materials, Inc. Welded susceptor assembly
US20080138645A1 (en) * 2006-10-06 2008-06-12 Ngk Insulators, Ltd. Substrate supporting member
US20150076135A1 (en) * 2013-09-16 2015-03-19 Applied Materials, Inc. Heated substrate support with temperature profile control

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