WO2001000735A1 - Composition resinique hydrosoluble - Google Patents
Composition resinique hydrosoluble Download PDFInfo
- Publication number
- WO2001000735A1 WO2001000735A1 PCT/JP2000/003924 JP0003924W WO0100735A1 WO 2001000735 A1 WO2001000735 A1 WO 2001000735A1 JP 0003924 W JP0003924 W JP 0003924W WO 0100735 A1 WO0100735 A1 WO 0100735A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- water
- soluble resin
- resin composition
- soluble
- pattern
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
- C08L101/12—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
- C08L101/14—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity the macromolecular compounds being water soluble or water swellable, e.g. aqueous gels
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00937263A EP1152036B1 (en) | 1999-06-29 | 2000-06-16 | Method for forming a fine resist pattern applying a water-soluble resin composition |
US09/786,245 US6555607B1 (en) | 1999-06-29 | 2000-06-16 | Water-soluble resin composition |
DE60044638T DE60044638D1 (de) | 1999-06-29 | 2000-06-16 | Methode zur erzeugung feiner lackstrukturen mittels einer wasserlöslichen harz-zusammensetzung |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11/182778 | 1999-06-29 | ||
JP18277899A JP3950584B2 (ja) | 1999-06-29 | 1999-06-29 | 水溶性樹脂組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001000735A1 true WO2001000735A1 (fr) | 2001-01-04 |
Family
ID=16124263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2000/003924 WO2001000735A1 (fr) | 1999-06-29 | 2000-06-16 | Composition resinique hydrosoluble |
Country Status (8)
Country | Link |
---|---|
US (1) | US6555607B1 (ja) |
EP (1) | EP1152036B1 (ja) |
JP (1) | JP3950584B2 (ja) |
KR (1) | KR100707838B1 (ja) |
CN (1) | CN1134511C (ja) |
DE (1) | DE60044638D1 (ja) |
TW (1) | TWI250381B (ja) |
WO (1) | WO2001000735A1 (ja) |
Cited By (6)
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EP1273974A2 (en) * | 2001-07-05 | 2003-01-08 | Tokyo Ohka Kogyo Co., Ltd. | Method for reducing a pattern dimension in a photoresist layer |
WO2003014830A1 (en) * | 2001-08-10 | 2003-02-20 | Fujitsu Limited | Resist pattern swelling material, and method for patterning using same |
WO2003040832A1 (fr) * | 2001-11-05 | 2003-05-15 | Tokyo Ohka Kogyo Co., Ltd. | Agent destine a la formation d'un revetement, permettant de reduire les dimensions d'un motif, et procede de formation d'un motif fin faisant intervenir cet agent |
WO2005013011A1 (ja) * | 2003-08-04 | 2005-02-10 | Fujitsu Limited | レジストパターン厚肉化材料、それを用いたレジストパターンの製造方法及び半導体装置の製造方法 |
US8158328B2 (en) | 2007-02-15 | 2012-04-17 | Tokyo Ohka Kogyo Co., Ltd. | Composition for formation of anti-reflection film, and method for formation of resist pattern using the same |
US8715901B2 (en) | 2004-05-26 | 2014-05-06 | Jsr Corporation | Resin composition for forming fine pattern and method for forming fine pattern |
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US6800415B2 (en) | 2001-09-28 | 2004-10-05 | Clariant Finance (Bvi) Ltd | Negative-acting aqueous photoresist composition |
EP1315043A1 (en) * | 2001-11-27 | 2003-05-28 | Fujitsu Limited | Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof |
US7189783B2 (en) | 2001-11-27 | 2007-03-13 | Fujitsu Limited | Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof |
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US6818384B2 (en) * | 2002-10-08 | 2004-11-16 | Samsung Electronics Co., Ltd. | Methods of fabricating microelectronic features by forming intermixed layers of water-soluble resins and resist materials |
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2000
- 2000-05-23 TW TW089109939A patent/TWI250381B/zh not_active IP Right Cessation
- 2000-06-16 DE DE60044638T patent/DE60044638D1/de not_active Expired - Lifetime
- 2000-06-16 KR KR1020017002466A patent/KR100707838B1/ko active IP Right Grant
- 2000-06-16 WO PCT/JP2000/003924 patent/WO2001000735A1/ja active IP Right Grant
- 2000-06-16 EP EP00937263A patent/EP1152036B1/en not_active Expired - Lifetime
- 2000-06-16 CN CNB008011575A patent/CN1134511C/zh not_active Expired - Lifetime
- 2000-06-16 US US09/786,245 patent/US6555607B1/en not_active Expired - Lifetime
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US5858620A (en) * | 1996-07-05 | 1999-01-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
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Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1489463A3 (en) * | 2001-07-05 | 2006-09-13 | Tokyo Ohka Kogyo Co., Ltd. | Method for reducing pattern dimension in a photoresist layer |
EP1942376A3 (en) * | 2001-07-05 | 2008-07-23 | Tokyo Ohka Kogyo Co., Ltd. | Method for reducing pattern dimension in a photoresist layer |
EP1489464A3 (en) * | 2001-07-05 | 2006-09-20 | Tokyo Ohka Kogyo Co., Ltd. | Method for reducing pattern dimension in a photoresist layer |
EP1273974A2 (en) * | 2001-07-05 | 2003-01-08 | Tokyo Ohka Kogyo Co., Ltd. | Method for reducing a pattern dimension in a photoresist layer |
US6811817B2 (en) | 2001-07-05 | 2004-11-02 | Tokyo Ohka Kogyo Co., Ltd. | Method for reducing pattern dimension in photoresist layer |
EP1489464A2 (en) * | 2001-07-05 | 2004-12-22 | Tokyo Ohka Kogyo Co., Ltd. | Method for reducing pattern dimension in a photoresist layer |
EP1489463A2 (en) * | 2001-07-05 | 2004-12-22 | Tokyo Ohka Kogyo Co., Ltd. | Method for reducing pattern dimension in a photoresist layer |
CN100465798C (zh) * | 2001-07-05 | 2009-03-04 | 东京应化工业株式会社 | 光刻胶层中减小图案尺寸的方法 |
EP1273974A3 (en) * | 2001-07-05 | 2003-10-15 | Tokyo Ohka Kogyo Co., Ltd. | Method for reducing a pattern dimension in a photoresist layer |
WO2003014830A1 (en) * | 2001-08-10 | 2003-02-20 | Fujitsu Limited | Resist pattern swelling material, and method for patterning using same |
EP2397901A1 (en) * | 2001-08-10 | 2011-12-21 | Fujitsu Limited | Resist pattern swelling material, and method for patterning using same |
WO2003040832A1 (fr) * | 2001-11-05 | 2003-05-15 | Tokyo Ohka Kogyo Co., Ltd. | Agent destine a la formation d'un revetement, permettant de reduire les dimensions d'un motif, et procede de formation d'un motif fin faisant intervenir cet agent |
US7235345B2 (en) | 2001-11-05 | 2007-06-26 | Tokyo Ohka Kogyo Co., Ltd. | Agent for forming coating for narrowing patterns and method for forming fine pattern using the same |
KR100774223B1 (ko) | 2001-11-05 | 2007-11-07 | 도오꾜오까고오교 가부시끼가이샤 | 패턴 미세화용 피복형성제 및 이를 사용한 미세 패턴의형성방법 |
CN1294457C (zh) * | 2001-11-05 | 2007-01-10 | 东京应化工业株式会社 | 用于图案细微化的涂膜形成剂和使用该形成剂形成细微图案的方法 |
WO2005013011A1 (ja) * | 2003-08-04 | 2005-02-10 | Fujitsu Limited | レジストパターン厚肉化材料、それを用いたレジストパターンの製造方法及び半導体装置の製造方法 |
US8715901B2 (en) | 2004-05-26 | 2014-05-06 | Jsr Corporation | Resin composition for forming fine pattern and method for forming fine pattern |
US8158328B2 (en) | 2007-02-15 | 2012-04-17 | Tokyo Ohka Kogyo Co., Ltd. | Composition for formation of anti-reflection film, and method for formation of resist pattern using the same |
Also Published As
Publication number | Publication date |
---|---|
EP1152036A4 (en) | 2006-05-31 |
US6555607B1 (en) | 2003-04-29 |
CN1134511C (zh) | 2004-01-14 |
KR20010089175A (ko) | 2001-09-29 |
EP1152036B1 (en) | 2010-07-07 |
TWI250381B (en) | 2006-03-01 |
JP3950584B2 (ja) | 2007-08-01 |
JP2001019860A (ja) | 2001-01-23 |
CN1314931A (zh) | 2001-09-26 |
EP1152036A1 (en) | 2001-11-07 |
KR100707838B1 (ko) | 2007-04-18 |
DE60044638D1 (de) | 2010-08-19 |
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