US8039052B2 - Multi-region processing system and heads - Google Patents

Multi-region processing system and heads Download PDF

Info

Publication number
US8039052B2
US8039052B2 US11/965,689 US96568907A US8039052B2 US 8039052 B2 US8039052 B2 US 8039052B2 US 96568907 A US96568907 A US 96568907A US 8039052 B2 US8039052 B2 US 8039052B2
Authority
US
United States
Prior art keywords
substrate
deposition
processing
region
head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related, expires
Application number
US11/965,689
Other languages
English (en)
Other versions
US20090068849A1 (en
Inventor
Rick Endo
Kurt Weiner
Indranil De
James Tsung
Maosheng Zhao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intermolecular Inc
Original Assignee
Intermolecular Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US11/965,689 priority Critical patent/US8039052B2/en
Application filed by Intermolecular Inc filed Critical Intermolecular Inc
Priority to PCT/US2008/075303 priority patent/WO2009032960A1/en
Priority to CN2008801143467A priority patent/CN101842874B/zh
Priority to JP2010524156A priority patent/JP5357159B2/ja
Priority to KR1020107007200A priority patent/KR101534886B1/ko
Priority to TW097134166A priority patent/TWI407497B/zh
Priority to EP08799200.4A priority patent/EP2186116A4/en
Publication of US20090068849A1 publication Critical patent/US20090068849A1/en
Assigned to INTERMOLECULAR, INC. reassignment INTERMOLECULAR, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DE, INDRANIL, ENDO, RICK, TSUNG, JAMES, WEINER, KURT, ZHAO, MAOSHENG
Priority to US13/106,059 priority patent/US8770143B2/en
Publication of US8039052B2 publication Critical patent/US8039052B2/en
Application granted granted Critical
Priority to US14/321,198 priority patent/US20140311408A1/en
Expired - Fee Related legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
    • B05D1/08—Flame spraying
    • B05D1/10—Applying particulate materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B14/00—Arrangements for collecting, re-using or eliminating excess spraying material
    • B05B14/30—Arrangements for collecting, re-using or eliminating excess spraying material comprising enclosures close to, or in contact with, the object to be sprayed and surrounding or confining the discharged spray or jet but not the object to be sprayed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B16/00—Spray booths
    • B05B16/80—Movable spray booths
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

Definitions

  • Semiconductor processing operations include forming layers through deposition processes as well as removing layers, defining features (e.g., etch), preparing layers (e.g., cleans), doping or other processes that do not require the formation of a layer on the substrate.
  • similar processing techniques apply to the manufacture of integrated circuits (IC) semiconductor devices, flat panel displays, optoelectronics devices, data storage devices, magneto electronic devices, magneto optic devices, packaged devices, and the like.
  • IC integrated circuits
  • flat panel displays flat panel displays
  • optoelectronics devices data storage devices
  • magneto electronic devices magneto optic devices
  • packaged devices packaged devices, and the like.
  • improvements, whether in materials, unit processes, or process sequences are continually being sought for the deposition processes.
  • semiconductor companies conduct R&D on full wafer processing through the use of split lots, as the deposition systems are designed to support this processing scheme. This approach has resulted in ever escalating R&D costs and the inability to conduct extensive experimentation in a timely and
  • gradient processing has attempted to provide additional information, the gradient processing suffers from a number of shortcomings.
  • Gradient processing relies on defined non-uniformity which is not indicative of a conventional processing operation and therefore cannot mimic the conventional processing.
  • a moving mask or shutter is generally used to deposit different amounts of material (or dopant) across the entire substrate or a portion of the substrate.
  • This approach is also used for a deposition system having a carousel of targets which may or may not be used for co-sputtering purposes. In each of these systems, the uniformity of the region being deposited, as well as cross contamination issues when performing more than one deposition process render these techniques relatively ineffective for combinatorial processing.
  • an improved technique for accommodating the evaluation of multiple different process variations on a single substrate is provided to more efficiently evaluate the viability of different materials, unit processes, or process sequences.
  • Embodiments of the present invention provide a deposition system and method for combinatorial processing. Several inventive embodiments of the present invention are described below.
  • a deposition system having a radially articulating process head disposed within the deposition system is provided.
  • the radially articulating process head is capable of depositing a layer of material onto regions of a substrate.
  • the regions are site isolated regions of the substrate.
  • the deposition system may include multiple radially articulating deposition heads disposed over a substrate surface. In order to have access to the entire substrate surface, the support on which the substrate rests is configured to rotate or linearly move the substrate.
  • the process head is capable of being used for cold plasma operations where a base of the depositions head acts as a cathode and a shield surrounding a sidewall extending from the base acts as an anode.
  • a showerhead of the deposition head is adjustable relative to a distance from a substrate surface. That is, the showerhead is adjustable in a z-direction independent of the movement of the deposition head in order to adjust a process volume.
  • a process head has concentrically placed conduits configured to deliver a deposition fluid to a surface of a substrate through an inner conduit and provide exhaust for the deposition fluid through a cavity defined between an outer wall of the first conduit and an inner wall of the second conduit.
  • the bottom surface of the inner conduit and the bottom surface of the second conduit are co-planar.
  • the process head optionally includes a third conduit surrounding the second conduit.
  • the third conduit provides a fluid barrier preventing the deposition fluid from flowing outside a perimeter of the third conduit.
  • the fluid acting as the fluid barrier is exhausted through the second conduit.
  • the first, second and third conduits may be concentric around a common axis.
  • a gaseous deposition fluid flows through an inner conduit disposed over a portion of a substrate.
  • a vacuum may be applied to a defined cavity surrounding the inner conduit to withdraw fluid across a bottom surface of the inner conduit and into the defined cavity.
  • a containment fluid may optionally flow through an outer conduit surrounding both the inner conduit and the region encompassing the inner conduit in one embodiment.
  • a film is deposited onto the portion or region of the substrate and this may be repeated for another portion or region of the substrate.
  • a method for depositing a film on a site isolated region of a substrate is provided.
  • a showerhead within a showerhead assembly is moveable so as to adjust a volume of a processing region defined between the showerhead assembly and the site isolated region of the substrate.
  • a deposition fluid flows through the adjusted showerhead to deposit a film on the site isolated region of the substrate.
  • excess deposition fluid and deposition by-products are removed by providing vacuum to a confined area surrounding the showerhead assembly. Accordingly, through the embodiments described herein multiple sites on a substrate may be combinatorially processed, either in parallel, serially, or a combination of parallel and serially, to provide data on alternative process sequences, material, process parameters, etc.
  • FIG. 1 is a simplified schematic diagram illustrating a processing chamber in accordance with one embodiment of the invention.
  • FIG. 2 is a simplified schematic diagram showing additional details for movement of the articulating head in accordance with one embodiment of the invention.
  • FIG. 3 is a top view of the chamber of FIG. 2 in accordance with one embodiment of the invention.
  • FIG. 4A is a simplified schematic diagram of a system having a rotatable processing head and a moveable substrate support in accordance with one embodiment of the invention.
  • FIG. 4B is a simplified schematic diagram illustrating one exemplary combinatorial region pattern enabled through the embodiment of FIG. 4A
  • FIG. 5A is a simplified schematic diagram illustrating a process head configured for combinatorial processing in accordance with one embodiment of the invention.
  • FIG. 5B illustrates a processing head that may be utilized for a physical vapor deposition (PVD) process in accordance with one embodiment of the invention.
  • PVD physical vapor deposition
  • FIG. 6 is a top view of a process/deposition head for combinatorial processing in accordance with one embodiment of the invention.
  • FIG. 7 is a simplified schematic diagram illustrating a cross sectional view of the process head of FIG. 6 .
  • FIG. 7-1 is a simplified schematic diagram illustrating a bottom surface of an outer ring of the process head of FIG. 7 in more detail.
  • FIG. 8 is a simplified schematic diagram of a substrate that has been combinatorially processed with isolated regions in accordance with one embodiment of the invention.
  • FIG. 9 a simplified schematic diagram illustrating an integrated high productivity combinatorial (HPC) system having a process head configured for combinatorial processing in a process chamber of the system in accordance with one embodiment of the invention.
  • HPC high productivity combinatorial
  • the embodiments described below provide details for a multi-region processing system and associated process heads that enable processing a substrate in a combinatorial fashion.
  • different regions of the substrate may have different properties, which may be due to variations of the materials, unit processes (e.g., processing conditions or parameters) and process sequences, etc.
  • the conditions are preferably substantially uniform so as to mimic conventional full wafer processing within each region, however, valid results can be obtained for certain experiments without this requirement.
  • the different regions are isolated so that there is no inter-diffusion between the different regions.
  • the combinatorial processing for a substrate may be combined with conventional processing techniques where substantially the entire substrate is uniformly processed (e.g., subjected to the same materials, unit processes and process sequences).
  • the embodiments described herein can pull a substrate from a manufacturing process flow, perform combinatorial deposition processing and return the substrate to the manufacturing process flow for further processing.
  • the substrate can be processed in an integrated tool, e.g., a cluster tool, that allows both combinatorial and conventional processing in various chambers attached around a central chamber. Consequently, in one substrate information concerning the varied processes and the interaction of the varied processes with conventional processes can be evaluated. Accordingly, a multitude of data is available from a single substrate for a desired process.
  • deposition which includes physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), reactive ion etching (RIE), cold plasma depositions, as well as other applications, such as etch, doping, surface modification or preparation (e.g., cleaning processes or monolayer depositing), etc.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • RIE reactive ion etching
  • cold plasma depositions as well as other applications, such as etch, doping, surface modification or preparation (e.g., cleaning processes or monolayer depositing), etc.
  • the processing head may be rotated in a circular fashion and the substrate may be moved in a relative x-y direction to enable access to the entire surface by the processing head.
  • both the processing head and the substrate may be rotated around an axis, where the axis may or may not be a common axis, or the processing head and the substrate may both move in a linear (XY plane) manner.
  • a single head or multiple heads may be included on a moveable arm that can radially scan across a surface of the substrate to enable serial (one head at a time), serial-parallel or fast serial (multiple heads at once that repeat processing to cover the various regions on the substrate) or parallel (using sufficient heads to process all of the regions at once) processing.
  • the rotation enables different processing by region through the rotation wherein each processing head implements a different process over a different region, or as another alternative, the same process is implemented in each processing head with reliance on the rotation of the substrate to create differently processed regions on the substrate.
  • a moveable head is configured to create a plasma in an isolated region, which may be referred to as a processing region, above the substrate thereby avoiding the need for masking. While masking is generally not required, the various aspects of the invention also work with masks and may in some situations improve the isolation capability and tolerances mentioned below.
  • a moveable head configured to enable site isolated ALD for a substrate is provided.
  • ALD, CVD, and PVD are not limited to deposition processes.
  • ALD can be used to perform a doping process in one embodiment. More particularly, by depositing one monolayer or less per deposition cycle, the ALD process can be used as a form of doping.
  • the PVD and/or ALD processes can “etch”.
  • process gases e.g., where a process gas reacts with the substrate, an etch process may be performed, as compared to a process gas that deposits material onto the substrate
  • FIG. 1 is a simplified schematic diagram illustrating a reaction chamber in accordance with one embodiment of the invention.
  • Reaction chamber 100 includes substrate support 102 and process head 104 .
  • Substrate support 102 which may be an electrostatic chuck or other chuck, is configured to rotate. In another embodiment, substrate support 102 may move linearly within chamber 100 .
  • Process head 104 is configured to articulate in a linear direction radially above a surface of substrate 112 , which is disposed on substrate support 102 . In one embodiment, processing head 104 may move in two dimensions in the plane above substrate 112 .
  • bellows 106 provides a seal to maintain the integrity of the chamber as process head 104 articulates.
  • substrate support 102 by configuring substrate support 102 to rotate at least 180 degrees and having process head 104 capable of moving across a radius of substrate 112 , all positions over substrate 112 are accessible to process head 104 for combinatorial processing.
  • substrate support 102 rotates at least 185 degrees to ensure complete coverage.
  • substrate support 112 rotates 360 degrees.
  • deposition head 104 can move in a Z direction orthogonal to the surface of a substrate resting on substrate support 102 in order to place the head over the region to be processed and/or vary the height of the process head to the substrate, which in turn varies a volume of the processing region, as described further below. In this manner process head 104 may be used to adjust a process volume defined between a process head and a surface of the substrate.
  • Fluid supply 108 is configured to deliver fluids to process head 104 .
  • fluid supply 108 delivers process gases suitable for any deposition process executed through process head 104 .
  • the delivery lines from fluid supply 108 may be flexible.
  • Drive 114 provides for the linear (X Y) and orthogonal (Z) movement of process head 104 within reaction chamber 100 .
  • drive 114 may be any suitable drive, such as a linear drive, worm gear, etc.
  • drive 114 or a separate drive may control the orthogonal movement, which is independent of the linear movement.
  • Exemplary drives may include linear slides driven by stepper motors on lead screws, pneumatics drives, servo drives, rack and pinions assemblies, etc.
  • controller 110 which includes a central processing unit (CPU), memory, and input/output capability, controls the processing within chamber 100 .
  • a recipe contained within the memory of controller 110 will be executed by the CPU for processing within chamber 100 .
  • Controller 110 is configured to control power supply 116 , drive 114 , fluid supply 108 , and other aspects of the reaction chamber for the combinatorial processing operations.
  • separate controllers may be utilized for each component and a general purpose computer can control the operation of the separate controllers through a processing recipe.
  • FIG. 2 is a simplified schematic diagram showing additional details for movement of the articulating process head in accordance with one embodiment of the invention.
  • an alternative sealing mechanism from the bellows of FIG. 1 is provided.
  • process head 104 is supported by arm 120 (also referred to as a post) which is affixed to moveable top plate 124 .
  • arm 120 extends through top plate 124 and an end of the arm is connected to a drive that provides Z-direction movement.
  • a seal is maintained between arm 120 and moveable top plate 124 to maintain the integrity of the processing chamber as the arm lifts and lowers relative to a surface of the substrate and otherwise moves.
  • Moveable top plate 124 may be slideably disposed over bearing support surface 128 and o-rings 126 .
  • Bearing support surface 128 is a surface disposed on chamber top 122 which guides moveable top plate 124 so as not to cause excessive pressure on o-rings 126 . While one bearing surface is illustrated in FIG. 2 , another bearing surface may be provided across the opening of chamber top 122 in order to support moveable top plate 124 on both sides of the opening.
  • the bearing surface may consist of ball bearings, pneumatics, hydraulics, etc.
  • the chamber is at an ultra high vacuum, e.g., 10 ⁇ 8 or 10 ⁇ 9 torr, while the region between o-rings 126 is pumped down to a milliTorr vacuum range.
  • the pumping of the space between o-rings 126 can be accomplished through channel 130 that enables access for a pump to the space defined between o-rings 126 .
  • channel 130 may be drilled through the upper plate of the chamber to enable access to pump the space defined between o-rings 126 .
  • FIG. 3 is a top view of the chamber of FIG. 2 in accordance with one embodiment of the invention.
  • top movable plate 124 includes posts 120 for supporting a process head within the chamber. While there are two posts 120 for slideable moveable plate 124 in FIG. 3 , it should be appreciated that any number of posts and corresponding process heads may be disposed on the slideable plate.
  • O-rings 126 provide a seal between the vacuum of the chamber and the outside atmosphere.
  • Drive 114 for moveable plate 124 may include any suitable linear drive, worm gear, etc. in order to articulate the posts 120 and corresponding deposition head for movement above a surface of a wafer for the combinatorial processing.
  • the process head 104 can be any number of different process heads directed to various applications, including deposition operations, which includes physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), and other applications, such as etch, doping, surface modification or preparation (e.g., cleaning processes or monolayers depositing), etc.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • etch etch
  • doping e.g., cleaning processes or monolayers depositing
  • surface modification or preparation e.g., cleaning processes or monolayers depositing
  • FIG. 4A is a simplified schematic diagram of a system having a rotatable processing head and a moveable substrate support in accordance with one embodiment of the invention.
  • Process head 104 is supported by arm 120 within clamber 100 .
  • Arm 120 is configured to move in a vertical direction (Z articulation) and rotate about an axis.
  • An axis of process head 104 is offset from the axis of rotation around which process head 104 rotates.
  • Substrate 112 is disposed on substrate support 102 .
  • Substrate support 102 is configured to move in a vertical direction (Z articulation) as well as linear articulation in an XY plane. In this manner, isolated regions of substrate 112 may be combinatorially processed.
  • multiple process heads may be attached to arm 120 .
  • multiple arms may be provided within chamber 100 .
  • FIG. 4B is a simplified schematic diagram illustrating one exemplary combinatorial region pattern enabled through the embodiment of FIG. 4A .
  • Substrate 112 has isolated regions 109 defined thereon. Isolated regions 109 may be regions that are combinatorially processed where one of or a combination of materials, unit processes or a process sequence is varied across the regions.
  • track 111 is one exemplary path followed by process head 104 of FIG. 4A .
  • process head 104 of FIG. 4A
  • FIG. 8 the embodiments described herein will enable numerous other patterns through the rotational movement of process head 104 and planar movement of substrate support 102 , such as the exemplary pattern shown in FIG. 8 .
  • FIGS. 5A and 5B illustrate simplified schematic diagrams of a process head configured for combinatorial processing in accordance with embodiments of the invention.
  • Process head 104 can enable several dry processes, including plasma based systems (e.g., PVD, its variants, or cold plasma) as illustrated in FIG. 5B or other gaseous fluid based systems (e.g., ALD or CVD, or similar variants) as illustrated in FIG. 5A . While these types of heads are explained in detail, other heads that support additional processing schemes can be adapted from these heads or can replace these heads.
  • Process head 104 is a cylindrical shape in accordance with one embodiment, but can be any other geometric shapes, such as quadrilateral, oval, pentagon, etc.
  • the process region on the substrate also referred to as a site isolated region, can be defined by the reaction chamber, e.g., on a blanket or patterned substrate through the process head, or the process region can be predefined on the substrate (e.g., through test structures, die, multiple die or other techniques).
  • sidewall 152 defines an outer wall of the process or deposition head and in a top region of process head 104 , valves 154 provide fluid to plenum 156 , which distributes the fluid to showerhead 158 .
  • the combination of showerhead 158 and plenum 156 may be referred to as a showerhead assembly or process head assembly.
  • a seal between the showerhead assembly and sidewall 152 is provided by o-ring 160 , which also enables movement of the showerhead assembly without breaking the vacuum.
  • the showerhead assembly can also be permanently affixed to sidewall 152 in one embodiment.
  • sidewall 152 can be moveably sealed with outer wall 170 , e.g., through an o-ring or other suitable seal enabling slideable translation to allow for movement in the z-direction.
  • Vacuum may be applied through outer region 168 in order to remove process by-products from processing region 162 .
  • Plenum 156 and showerhead 158 may both be moveable in a vertical direction relative to a surface of substrate 164 in order to change a processing volume within process region 162 .
  • outer shield 170 and sidewall 152 remain stationary so as to provide a barrier to isolate the plasma to a region of substrate 164 .
  • sidewall 152 may be moveable with the showerhead assembly being either stationary or moveable.
  • inert gas e.g., argon, nitrogen, etc. may be fed into an annular space 168 to help maintain isolation of the processing to region 162 , defined between sidewall 152 , the showerhead assembly and a top surface of the substrate.
  • exhaust would be provided through another mechanism, such as another opening, e.g., portals in the showerhead assembly, or other suitable techniques.
  • FIG. 5B illustrates a processing head that may be utilized for a PVD process in accordance with one embodiment of the invention.
  • Process head 104 includes similar features as described with regard to FIG. 5A and for the sake of redundancy some of these features will not be described again in detail.
  • Process head assembly 157 may include a target for the PVD process while gas inlet 149 delivers the process gas from gas source 151 for the PVD processing.
  • a plasma can be struck within region 162 in order to deposit material on a surface of substrate 164 , which is disposed over electrostatic chuck 166 , or other known substrate supports.
  • the plasma within region 162 may be sustained by direct current (DC), DC pulsed, radio frequency (RF), inductive coupling, microwave, etc.
  • a cavity, also referred to region 168 , defined within outer shield 170 is maintained at a lower pressure than the plasma region deposition chamber in the plasma to entrap or collect the unused or reacted materials and gases.
  • a center cathode is contained within process head 104 , e.g., a base of process head assembly 157 functions as a cathode, and outer shield 170 would function as an anode, e.g., when performing a cold plasma processing operation, where a stable gas plasma jet is generated near room temperature at atmospheric pressure.
  • a vacuum is not necessary within the plasma region.
  • a vacuum need not be applied to cavity 168 within outer shield 170 as the entire chamber 104 may be at an appropriate operating pressure and outer shield 170 prevents processing materials from spreading outside of process head 104 into the main chamber to avoid impacting other regions.
  • Outer shield 170 may be electrically floating or grounded as required by the combinatorial processing.
  • outer shield 170 may be resting against a top surface of substrate 164 in order to provide a seal against a top surface of the substrate to isolate a region of the substrate for processing and prevent inter-diffusion of deposition materials between regions.
  • outer shield 170 may move orthogonally relative to the surface of substrate 164 so that a volume of region 162 may be modified.
  • the substrate support may move the substrate vertically, as well as rotate the substrate in one embodiment.
  • the volume of region 162 is adjustable through numerous techniques under the embodiments described herein.
  • FIG. 6 is a top view of a process/deposition head for combinatorial processing in accordance with one embodiment of the invention.
  • Process head 104 includes two or optionally three concentric rings.
  • An optional outer ring 180 surrounds an intermediate ring 182 which in turn surrounds inner ring 184 , also referred to as a conduit.
  • inner ring 184 also referred to as a conduit.
  • the region defined within inner ring 184 flows a process gas over a region of a substrate disposed below in order to deposit a layer on a portion of the substrate during combinatorial processing operations.
  • the region within inner ring 184 is about 43 millimeters in diameter to accommodate typical test die sizes, but can be any size based on known test die or other design parameters.
  • the region defined between intermediate ring 182 and inner ring 184 is used to evacuate or pump gas out from the deposition area defined within inner ring 184 . That is, a vacuum source may be connected to evacuate the area between an inner surface of intermediate ring 182 and an outer wall of the conduit for inner ring 184 .
  • the region between optional outer ring 180 and intermediate ring 182 may be used to flow inert gas, e.g., argon, in order to contain the products and prevent contamination to other regions of the substrate disposed below the deposition head.
  • inert gas e.g., argon
  • the vacuum in the annular space defined by ring 182 and 184 prevents the process being performed in the regions defined by process head 104 from impacting other regions on the wafer. While some gases or other fluids may escape, the amount of gas escaping will not impact the experimentation. If ring 180 is not included, then regions on the substrate may be spaced further apart than if this additional layer of protection is provided within the process head itself.
  • the region between an inner surface of intermediate ring 182 and an outer surface of inner ring 184 is approximately between one and ten millimeters.
  • the thickness of each of the concentric rings is approximately one to five millimeters.
  • the material of construction may be any material suitable for deposition processes, such as stainless steel and aluminum.
  • FIG. 7 is a simplified schematic diagram illustrating a cross sectional view of the process head of FIG. 6 .
  • outer ring 180 preferably has less separation with the substrate than rings 182 or 184 and may contact the surface of substrate 164 .
  • optional outer ring 180 provides extra protection against leakage from the processing region to other regions of the substrate than when only rings 182 and 184 are included.
  • a process gas would flow within inner ring 184 and be evacuated through the intermediate space between intermediate ring 182 and inner ring 184 .
  • gas would flow towards substrate 164 within area 175 defined by inner ring 184 , under ring 184 and be evacuated by a vacuum acting within the area defined by inner ring 184 and intermediate ring 182 .
  • the process region is defined by inner ring 184 , while intermediate ring 182 and optional outer ring 180 provide buffer zones.
  • the process volumes defined below the bottom surfaces of inner ring 184 and a top surface of the substrate is adjustable by moving the process head vertically.
  • intermediate ring 182 may be closer to the substrate than inner ring 184 , however this is optional. Alternatively, the intermediate ring can be touching substrate 164 in one embodiment.
  • the spacing between ring 182 and substrate 164 may allow processing fluid (e.g., gases) to escape.
  • processing fluid e.g., gases
  • argon or some other inert gas may be used to flow within the outer most cavity or annular space 179 in order to further contain the processing byproducts. This inert gas would flow towards substrate 164 in the outer cavity 179 , under ring 182 and be evacuated by the vacuum in area 177 between inner ring 184 and intermediate ring 182 .
  • the inert gas will not impact the processing within inner ring 184 and the flow rate should be chosen to minimize any such diffusion into that region.
  • the materials used for the process head can be stainless steel, aluminum, or any other suitable metal compatible with the plasma and gases used for the processing and deposition of layers on semiconductor wafers.
  • a polytetrafluoroethylene such as TEFLONTM coating or some other suitable non-reactive coating may be used on the surface of the process head that contacts the surface of substrate 164 .
  • the bottom surface of outer ring 180 is a knife edge to minimize the contact area with substrate 164 .
  • FIG. 7-1 illustrates a bottom surface of outer ring 180 where the bottom edge 181 is configured as a knife edge.
  • FIG. 8 is a simplified schematic diagram of a substrate that has been combinatorially processed with isolated regions in accordance with one embodiment of the invention.
  • Substrate 200 includes a plurality of regions 202 disposed thereon. Each of regions 202 is processed with one of the process heads in the chamber(s) described above.
  • a linearly, radially articulating arm and the rotation provided by a substrate support or rotation of the head and linear (x-y) movement of the substrate, or rotation of both the head and the substrate, or linear movement of both the head and the substrate
  • any pattern of site isolated deposition areas may be defined on the surface of substrate 200 .
  • the pattern shown is symmetric and enables the greatest use of the substrate and easiest alignment of the heads, however, other patterns or numbers of regions can also be implemented.
  • FIG. 8 illustrates regions 202 as isolated and not overlapping, the regions may overlap in one embodiment.
  • a region refers to a localized area on a substrate which is, was, or is intended to be used for processing or formation of a selected material.
  • the region can include one region and/or a series of regular or periodic regions pre-formed on the substrate.
  • the region may have any convenient shape, e.g., circular, rectangular, elliptical, wedge-shaped, etc.
  • the regions are predefined on the substrate.
  • the processing may define the regions in another embodiment.
  • FIG. 9 a simplified schematic diagram illustrating an integrated high productivity combinatorial (HPC) system in accordance with one embodiment of the invention.
  • HPC system includes a frame 900 supporting a plurality of processing modules. It should be appreciated that frame 900 may be a unitary frame in accordance with one embodiment.
  • the environment within frame 900 is controlled.
  • Load lock/factory interface 902 provides access into the plurality of modules of the HPC system.
  • Robot 914 provides for the movement of substrates (and masks) between the modules and for the movement into and out of the load lock 902 .
  • Module 904 may be an orientation/degassing module in accordance with one embodiment.
  • Module 906 may be a clean module, either plasma or non-plasma based, in accordance with one embodiment of the invention.
  • any type of chamber or combination of chamber may be implemented and the description herein is merely illustrative of one possible combination and not meant to limit the potential chamber or processes that can be supported to combine combinatorial processing or combinatorial plus convention processing of a substrate/wafer.
  • Module 908 is referred to as a library module in accordance with one embodiment of the invention.
  • a plurality of masks also referred to as processing masks, are stored. The masks may be used in the dry combinatorial processing modules in order to apply a certain pattern to a substrate being processed in those modules.
  • Module 910 includes a HPC physical vapor deposition module in accordance with one embodiment of the invention.
  • Module 912 is a deposition module, e.g., an ALD or CVD module.
  • Modules 910 and/or 912 may include the process heads described herein. It should be appreciated that modules 910 and 912 may be configured to include multiple process heads where the process heads are all similar, such as the process heads of FIG.
  • the multiple process heads may be used to perform the same or different process operations on a substrate being processed within the process module.
  • some process heads may perform ALD operations, some process heads may perform PVD operations and so on.
  • process heads performing the same operation may vary the processing conditions, parameters, materials, etc. These multiple different operations may be performed in parallel or serially. Accordingly, numerous combinations of experiments may be performed on site isolated regions of a single substrate through the combinatorial processing embodiments with the moveable processing heads described herein.
  • a centralized controller i.e., computing device 911 , may control the processes of the HPC system. Further details of the HPC system are described in U.S. patent application Ser. Nos. 11/672,478, and 11/672,473. With HPC system, a plurality of methods may be employed to deposit material upon a substrate employing combinatoric processes.
  • the embodiments described above may enable combinatorial processes to be applied to a substrate in a site isolated manner either in parallel, serial-parallel or serial manner.
  • a process head is disposed within a chamber and opposing a substrate surface can scan radially across the substrate surface.
  • the head is preferably configured to process a portion (e.g., site isolated region) of the substrate in a substantially uniform manner without the use of a mask or shutter, however, a mask may be used in certain embodiments.
  • the substrate is not circular, e.g., a quadrilateral or other shape
  • the head would preferably scan across a maximum width of the quadrilateral, while the substrate is rotated to provide complete access, but need not be so set up.
  • the head can move linearly in combination with orthogonal movement of the substrate to minimize the overall the chamber size.
  • the movement of the head is performed in a manner that maintains the integrity of the processing chamber.
  • the deposition may occur on a blanket substrate or a substrate having structures, patterns, devices or other features defined thereon.
  • the substrate may be further processed through full substrate conventional techniques following the combinatorial deposition techniques described above.
  • the chamber may have multiple process heads and multiple regions may be processed in a serial manner, a fast serial or a parallel manner. It should be appreciated that the inner wall of the process heads may define the regions, while the outer walls provide a seal to isolate the regions. In another embodiment, the regions may be pre-defined on the substrate.
  • the chamber may include a rotatable substrate support under the process head and the substrate support may rotate over approximately half of the substrate, e.g., approximately 185 degrees.
  • the radially articulating process head has a range of movement over a radius of the substrate.
  • the process head may move vertical relative to a base of the deposition system.
  • the process head is affixed to an arm driving both radial articulation of the head over a top surface of a substrate in the reaction chamber and orthogonal movement of the process head relative to a top surface of the substrate in one embodiment.
  • a differentially pumped seal is defined by a first o-ring surrounded by a second o-ring and a cavity between the first and second o-rings is evacuated to a pressure greater than a pressure within the deposition system and less than an external pressure in order to isolate the chamber form an external surface.
  • the process head includes a base opposing the substrate and a shield surrounding a lower portion of a sidewall extending from the base.
  • the base functions as a cathode and the shield functions as an anode for a cold plasma operation.
  • a lower portion of the process head is encompassed by a containment wall configured to exhaust deposition byproducts during a deposition operation in one embodiment.
  • a process head having a first conduit configured to deliver a gas to a surface of a substrate and a second conduit defined partially by an outer wall encompassing the first conduit.
  • the second conduit is configured to provide exhaust for the gas wherein the outer wall of the second conduit acts as a barrier to contain the gas within an inner area defined by the second conduit.
  • the process head may include a third conduit surrounding the second conduit, where the third conduit is configured to provide a fluid barrier preventing the gas from flowing outside a perimeter of the third conduit.
  • the first, second, and third conduits are concentric around a common axis.
  • a bottom surface of the second conduit is closer to the surface of the substrate than a bottom surface of the first conduit in one embodiment. In another embodiment, the bottom surface may contact the substrate.
  • the process head is affixed to an articulating arm inside a reaction chamber where the substrate rotates on a substrate support in one embodiment.
  • a bottom surface of the third conduit extends past bottom surfaces of the first and second conduits in another embodiment.
  • the bottom surface of the third conduit or the second conduit may contact the substrate and may be configured as a knife edge.
  • the bottom surface of the third conduit is coated with an inert film.
  • a moveable process head for site isolated deposition includes an inner wall defining a process region.
  • multiple processing regions are formed on one substrate; and an outer wall surrounding a bottom portion of an outer surface of the inner wall contains the processing components to the processing region.
  • a bottom surface of the outer wall extends past a bottom surface of the inner wall.
  • the outer wall contacts a surface of a substrate outside a perimeter of an active deposition area during a deposition operation.
  • the outer wall may contact a mask disposed over a substrate.
  • a vacuum source in fluid communication with an opening of the outer wall is included where the opening enables access to a cavity defined between the outer wall and the inner wall.
  • the assembly is moveable independent of the process head.
  • the process head is moveable in one dimension and the assembly is moveable in one or more dimension in one exemplary embodiment.
  • the moveable assembly may include one of a target, a showerhead or a cold plasma head.
  • the outer wall and the inner wall may move independently from each other in a Z direction.
  • the outer wall contacts a mask disposed over a surface of the substrate in one embodiment.
  • a method for multi-region processing on a substrate includes flowing a fluid through an inner conduit disposed over a region of the substrate for processing that region and withdrawing fluid from a region encompassing the inner conduit contemporaneously with the flowing.
  • a containment fluid flows through an outer conduit surrounding both the inner conduit and the region encompassing the inner conduit while providing substantially uniform processing to the region on the substrate defined by the inner conduit.
  • the method includes repeating each above mentioned method operations for a different region of the substrate in one of a serial, serial-parallel, or parallel manner and subsequently processing the substrate through a conventional full wafer process.
  • the method can include moving a process head assembly including the inner conduit and the outer conduit so that the inner conduit is disposed over a next portion of the substrate as well as radial articulation of the deposition head and rotation of the substrate.
  • the method can include contacting a surface of the substrate with a bottom surface of the outer conduit.
  • the moving mentioned above includes rotation of the process head and linear movement of the substrate in one embodiment. The regions may be defined by the process head.
  • a method for processing a site isolated region of a substrate includes modifying a volume of a processing region defined between the showerhead assembly and the site isolated region of the substrate and flowing a deposition fluid through the showerhead.
  • a film is deposited on the site isolated region of the substrate and excess deposition fluid and deposition by-products are removed through an area surrounding the showerhead assembly contemporaneously with the depositing.
  • the volume of the processing region may be adjusted by moving the showerhead assembly relative to a surface of the substrate in one embodiment.
  • a plasma may be generated in the processing region to generate material for depositing onto the surface of the substrate.
  • a vacuum to the area surrounding the showerhead may be applied to contain or remove fluids from the processing region in one embodiment.
  • the regions are processed similarly or with different spacing between the showerhead and the substrate and wherein the different spacing is determined by one of movement of the showerhead assembly or movement of an inner wall supporting the showerhead assembly within an outer wall surrounding the inner wall in one exemplary embodiment.
  • a reaction chamber that includes a rotating process head disposed within the reaction chamber.
  • the rotating process head rotates about an axis that is different than an axis of the process head and a substrate support configured to support a substrate under the rotating process head.
  • the substrate support is configured to move the substrate in a planar direction orthogonal to the axis of the processing head.
  • the invention also relates to a device or an apparatus for performing these operations.
  • the apparatus can be specially constructed for the required purpose, or the apparatus can be a general-purpose computer selectively activated or configured by a computer program stored in the computer.
  • various general-purpose machines can be used with computer programs written in accordance with the teachings herein, or it may be more convenient to construct a more specialized apparatus to perform the required operations.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
US11/965,689 2007-09-06 2007-12-27 Multi-region processing system and heads Expired - Fee Related US8039052B2 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
US11/965,689 US8039052B2 (en) 2007-09-06 2007-12-27 Multi-region processing system and heads
EP08799200.4A EP2186116A4 (en) 2007-09-06 2008-09-05 MULTI-TONE TREATMENT SYSTEM AND HEADS
CN2008801143467A CN101842874B (zh) 2007-09-06 2008-09-05 半导体处理方法、半导体处理室和处理头
JP2010524156A JP5357159B2 (ja) 2007-09-06 2008-09-05 複数領域処理システム及びヘッド
KR1020107007200A KR101534886B1 (ko) 2007-09-06 2008-09-05 다중-영역 프로세싱 시스템 및 헤드
TW097134166A TWI407497B (zh) 2007-09-06 2008-09-05 多區域處理系統及處理頭
PCT/US2008/075303 WO2009032960A1 (en) 2007-09-06 2008-09-05 Multi-region processing system and heads
US13/106,059 US8770143B2 (en) 2007-09-06 2011-05-12 Multi-region processing system
US14/321,198 US20140311408A1 (en) 2007-09-06 2014-07-01 Multi-Region Processing System and Heads

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97050007P 2007-09-06 2007-09-06
US11/965,689 US8039052B2 (en) 2007-09-06 2007-12-27 Multi-region processing system and heads

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/106,059 Division US8770143B2 (en) 2007-09-06 2011-05-12 Multi-region processing system

Publications (2)

Publication Number Publication Date
US20090068849A1 US20090068849A1 (en) 2009-03-12
US8039052B2 true US8039052B2 (en) 2011-10-18

Family

ID=40429341

Family Applications (3)

Application Number Title Priority Date Filing Date
US11/965,689 Expired - Fee Related US8039052B2 (en) 2007-09-06 2007-12-27 Multi-region processing system and heads
US13/106,059 Active 2028-04-11 US8770143B2 (en) 2007-09-06 2011-05-12 Multi-region processing system
US14/321,198 Abandoned US20140311408A1 (en) 2007-09-06 2014-07-01 Multi-Region Processing System and Heads

Family Applications After (2)

Application Number Title Priority Date Filing Date
US13/106,059 Active 2028-04-11 US8770143B2 (en) 2007-09-06 2011-05-12 Multi-region processing system
US14/321,198 Abandoned US20140311408A1 (en) 2007-09-06 2014-07-01 Multi-Region Processing System and Heads

Country Status (7)

Country Link
US (3) US8039052B2 (ja)
EP (1) EP2186116A4 (ja)
JP (1) JP5357159B2 (ja)
KR (1) KR101534886B1 (ja)
CN (1) CN101842874B (ja)
TW (1) TWI407497B (ja)
WO (1) WO2009032960A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120080790A1 (en) * 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Apparatus and method for uniform metal plating
US20150336120A1 (en) * 2012-12-21 2015-11-26 Manish Khandelwal Deposition cloud tower with adjustable field

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040261712A1 (en) * 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
US8287647B2 (en) * 2007-04-17 2012-10-16 Lam Research Corporation Apparatus and method for atomic layer deposition
US8092599B2 (en) * 2007-07-10 2012-01-10 Veeco Instruments Inc. Movable injectors in rotating disc gas reactors
US20090081360A1 (en) * 2007-09-26 2009-03-26 Fedorovskaya Elena A Oled display encapsulation with the optical property
US8333839B2 (en) * 2007-12-27 2012-12-18 Synos Technology, Inc. Vapor deposition reactor
US8129288B2 (en) * 2008-05-02 2012-03-06 Intermolecular, Inc. Combinatorial plasma enhanced deposition techniques
US8089055B2 (en) * 2008-02-05 2012-01-03 Adam Alexander Brailove Ion beam processing apparatus
US8882917B1 (en) * 2009-12-31 2014-11-11 Intermolecular, Inc. Substrate processing including correction for deposition location
US8470718B2 (en) * 2008-08-13 2013-06-25 Synos Technology, Inc. Vapor deposition reactor for forming thin film
US20100037824A1 (en) * 2008-08-13 2010-02-18 Synos Technology, Inc. Plasma Reactor Having Injector
US20100037820A1 (en) * 2008-08-13 2010-02-18 Synos Technology, Inc. Vapor Deposition Reactor
US8851012B2 (en) * 2008-09-17 2014-10-07 Veeco Ald Inc. Vapor deposition reactor using plasma and method for forming thin film using the same
US8770142B2 (en) * 2008-09-17 2014-07-08 Veeco Ald Inc. Electrode for generating plasma and plasma generator
US20100075051A1 (en) * 2008-09-24 2010-03-25 Curtis William Darling Method and apparatus for a shield blade
US20100178433A1 (en) * 2009-01-14 2010-07-15 Gm Global Technology Operations, Inc. Method and apparatus for applying bonding adhesive
US8871628B2 (en) * 2009-01-21 2014-10-28 Veeco Ald Inc. Electrode structure, device comprising the same and method for forming electrode structure
KR101172147B1 (ko) 2009-02-23 2012-08-07 시너스 테크놀리지, 인코포레이티드 플라즈마에 의한 라디칼을 이용한 박막 형성 방법
US10655219B1 (en) * 2009-04-14 2020-05-19 Goodrich Corporation Containment structure for creating composite structures
US8758512B2 (en) * 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
US20110033638A1 (en) * 2009-08-10 2011-02-10 Applied Materials, Inc. Method and apparatus for deposition on large area substrates having reduced gas usage
JP5287592B2 (ja) * 2009-08-11 2013-09-11 東京エレクトロン株式会社 成膜装置
US20110076421A1 (en) * 2009-09-30 2011-03-31 Synos Technology, Inc. Vapor deposition reactor for forming thin film on curved surface
TWI458557B (zh) * 2009-11-26 2014-11-01 Hon Hai Prec Ind Co Ltd 噴塗遮蔽結構及採用該結構之噴塗遮蔽方法
US9111729B2 (en) 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
DE102009060649A1 (de) * 2009-12-22 2011-06-30 EISENMANN Anlagenbau GmbH & Co. KG, 71032 Anlage zur Oberflächenbehandlung von Gegenständen
US9190289B2 (en) 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
TW201200614A (en) * 2010-06-29 2012-01-01 Hon Hai Prec Ind Co Ltd Coating device
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
FI124113B (fi) 2010-08-30 2014-03-31 Beneq Oy Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi
FI20105908A0 (fi) * 2010-08-30 2010-08-30 Beneq Oy Laite
ITMO20100263A1 (it) * 2010-09-21 2012-03-22 Vincenzo Rina Apparecchiatura per la verniciatura di scafi di imbarcazioni navali o simili
US8771791B2 (en) 2010-10-18 2014-07-08 Veeco Ald Inc. Deposition of layer using depositing apparatus with reciprocating susceptor
GB201102337D0 (en) * 2011-02-09 2011-03-23 Univ Ulster A plasma based surface augmentation method
US8840958B2 (en) 2011-02-14 2014-09-23 Veeco Ald Inc. Combined injection module for sequentially injecting source precursor and reactant precursor
US8877300B2 (en) 2011-02-16 2014-11-04 Veeco Ald Inc. Atomic layer deposition using radicals of gas mixture
US9163310B2 (en) 2011-02-18 2015-10-20 Veeco Ald Inc. Enhanced deposition of layer on substrate using radicals
US20130025688A1 (en) * 2011-07-28 2013-01-31 Intermolecular, Inc. No-Contact Wet Processing Tool with Fluid Barrier
US8715518B2 (en) * 2011-10-12 2014-05-06 Intermolecular, Inc. Gas barrier with vent ring for protecting a surface region from liquid
CN103031535B (zh) * 2011-09-28 2015-12-09 核心能源实业有限公司 薄膜工艺设备及其制作方法
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US8617409B2 (en) * 2011-11-22 2013-12-31 Intermolecular, Inc. Magnetically levitated gas cell for touchless site-isolated wet processing
US20130136864A1 (en) * 2011-11-28 2013-05-30 United Technologies Corporation Passive termperature control of hpc rotor coating
US8663977B2 (en) * 2011-12-07 2014-03-04 Intermolecular, Inc. Vertically retractable flow cell system
US20130196053A1 (en) * 2012-01-10 2013-08-01 State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon Stat Flow cell design for uniform residence time fluid flow
DE112013001721T5 (de) * 2012-03-29 2014-12-11 Veeco Ald Inc. Abtastung-Einspeiseanordnung-Modul zum Bearbeiten von Substrat
US20130323422A1 (en) * 2012-05-29 2013-12-05 Applied Materials, Inc. Apparatus for CVD and ALD with an Elongate Nozzle and Methods Of Use
FI124298B (en) 2012-06-25 2014-06-13 Beneq Oy Device for treating substrate surface and nozzle head
US8663397B1 (en) 2012-10-22 2014-03-04 Intermolecular, Inc. Processing and cleaning substrates
US8821985B2 (en) * 2012-11-02 2014-09-02 Intermolecular, Inc. Method and apparatus for high-K gate performance improvement and combinatorial processing
DE102012111218A1 (de) * 2012-11-21 2014-05-22 Emdeoled Gmbh Materialabgabekopf, Materialabgabeeinrichtung und Verfahren
US9023438B2 (en) * 2012-12-17 2015-05-05 Intermolecular, Inc. Methods and apparatus for combinatorial PECVD or PEALD
FI126043B (en) 2013-06-27 2016-06-15 Beneq Oy Method and device for coating a surface of a substrate
US10155244B2 (en) * 2013-09-16 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fluid deposition appartus and method
JP2015100761A (ja) * 2013-11-26 2015-06-04 曙ブレーキ工業株式会社 支持具、粉体塗布システム、粉体塗布方法、及びキャリパ
CN106030761B (zh) 2014-01-27 2019-09-13 威科仪器有限公司 用于化学气相沉积系统的晶片载体及其制造方法
CN106232867B (zh) * 2014-04-18 2019-01-08 株式会社尼康 膜形成设备、基板处理设备和装置制造方法
US9209062B1 (en) * 2014-05-28 2015-12-08 Spintrac Systems, Inc. Removable spin chamber with vacuum attachment
JP5792364B1 (ja) * 2014-07-31 2015-10-07 株式会社日立国際電気 基板処理装置、チャンバリッドアセンブリ、半導体装置の製造方法、プログラム及び記録媒体
US9837254B2 (en) 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9406535B2 (en) * 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
JP6494417B2 (ja) * 2015-05-20 2019-04-03 株式会社ディスコ プラズマエッチング装置
KR102420015B1 (ko) * 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
US10403515B2 (en) * 2015-09-24 2019-09-03 Applied Materials, Inc. Loadlock integrated bevel etcher system
DE102016200506B4 (de) * 2016-01-17 2024-05-02 Robert Bosch Gmbh Ätzvorrichtung und Ätzverfahren
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
FR3058424B1 (fr) * 2016-11-10 2022-06-10 Bnl Eurolens Installation de depot par evaporation d'un revetement sur des articles
US11505864B2 (en) 2017-06-21 2022-11-22 Picosun Oy Adjustable fluid inlet assembly for a substrate processing apparatus and method
KR102452830B1 (ko) * 2017-12-12 2022-10-12 삼성전자주식회사 반도체 공정 챔버
US20200135464A1 (en) * 2018-10-30 2020-04-30 Applied Materials, Inc. Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
KR102620219B1 (ko) * 2018-11-02 2024-01-02 삼성전자주식회사 기판 처리 방법 및 기판 처리 장치
JP2022522419A (ja) 2019-02-28 2022-04-19 ラム リサーチ コーポレーション 側壁洗浄によるイオンビームエッチング
KR102673983B1 (ko) * 2019-03-15 2024-06-12 주식회사 케이씨텍 기판 처리 장치
JP7464692B2 (ja) * 2019-07-26 2024-04-09 アプライド マテリアルズ インコーポレイテッド 基板上にフィルムを形成するための蒸発器チャンバ
JP7060633B2 (ja) * 2020-01-29 2022-04-26 キヤノントッキ株式会社 成膜装置及び電子デバイス製造装置
JP7098677B2 (ja) * 2020-03-25 2022-07-11 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
CN111778552B (zh) * 2020-08-03 2021-10-08 中国科学院长春光学精密机械与物理研究所 一种mocvd组合喷淋头及mocvd设备
JP2022048667A (ja) * 2020-09-15 2022-03-28 キヤノントッキ株式会社 スパッタ装置及び成膜方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6746539B2 (en) * 2001-01-30 2004-06-08 Msp Corporation Scanning deposition head for depositing particles on a wafer
US20050016463A1 (en) 2003-06-13 2005-01-27 Pioneer Corporation Evaporative deposition method, evaporative deposition head, method for forming pattern of deposition material, and evaporative deposition material disk
JP2005120456A (ja) 2003-10-20 2005-05-12 Seiko Epson Corp 蒸着装置、有機エレクトロルミネッセンスパネルおよび蒸着方法
US20060127599A1 (en) * 2002-02-12 2006-06-15 Wojak Gregory J Process and apparatus for preparing a diamond substance
US20060231031A1 (en) * 2002-12-12 2006-10-19 Otb Group B.V. Method and apparatus for treating a substrate

Family Cites Families (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3641973A (en) * 1970-11-25 1972-02-15 Air Reduction Vacuum coating apparatus
DE3914065A1 (de) * 1989-04-28 1990-10-31 Leybold Ag Vorrichtung zur durchfuehrung von plasma-aetzverfahren
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5171360A (en) * 1990-08-30 1992-12-15 University Of Southern California Method for droplet stream manufacturing
US5292400A (en) * 1992-03-23 1994-03-08 Hughes Aircraft Company Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching
JP2872891B2 (ja) * 1993-08-06 1999-03-24 株式会社東芝 気化装置
JPH07201752A (ja) * 1993-12-27 1995-08-04 Toray Ind Inc 薄膜形成装置及び薄膜形成方法
US5529815A (en) * 1994-11-03 1996-06-25 Lemelson; Jerome H. Apparatus and method for forming diamond coating
JP3276278B2 (ja) * 1994-12-08 2002-04-22 キヤノン株式会社 記録液定着装置およびこれを具備する液体噴射記録装置
DE4445985A1 (de) * 1994-12-22 1996-06-27 Steag Micro Tech Gmbh Verfahren und Vorrichtung zur Belackung oder Beschichtung eines Substrats
US5811021A (en) * 1995-02-28 1998-09-22 Hughes Electronics Corporation Plasma assisted chemical transport method and apparatus
US5614026A (en) * 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas
JP3278714B2 (ja) * 1996-08-30 2002-04-30 東京エレクトロン株式会社 塗布膜形成装置
US5911834A (en) * 1996-11-18 1999-06-15 Applied Materials, Inc. Gas delivery system
CN1144198C (zh) * 1997-05-08 2004-03-31 松下电器产业株式会社 光记录媒体制造装置和制造方法
JPH1150237A (ja) * 1997-07-30 1999-02-23 Toshiba Glass Co Ltd 真空成膜装置
JP4003273B2 (ja) * 1998-01-19 2007-11-07 セイコーエプソン株式会社 パターン形成方法および基板製造装置
US6261365B1 (en) * 1998-03-20 2001-07-17 Tokyo Electron Limited Heat treatment method, heat treatment apparatus and treatment system
US6368665B1 (en) * 1998-04-29 2002-04-09 Microcoating Technologies, Inc. Apparatus and process for controlled atmosphere chemical vapor deposition
US6673155B2 (en) * 1998-10-15 2004-01-06 Tokyo Electron Limited Apparatus for forming coating film and apparatus for curing the coating film
JP2000349078A (ja) * 1999-06-03 2000-12-15 Mitsubishi Electric Corp 化学気相成長装置および半導体装置の製造方法
JP3662779B2 (ja) * 1999-06-22 2005-06-22 シャープ株式会社 プラズマ処理装置
US6245392B1 (en) * 1999-08-27 2001-06-12 Stephen J. Hillenbrand Coater apparatus and method
US6468350B1 (en) * 1999-08-27 2002-10-22 Stephen J. Hillenbrand Mobile coater apparatus
US6491759B1 (en) * 2000-03-14 2002-12-10 Neocera, Inc. Combinatorial synthesis system
JP2001276702A (ja) * 2000-03-28 2001-10-09 Toshiba Corp 成膜装置及び成膜方法
AU2001288225A1 (en) * 2000-07-24 2002-02-05 The University Of Maryland College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
GB0019848D0 (en) * 2000-08-11 2000-09-27 Rtc Systems Ltd Apparatus and method for coating substrates
US6884294B2 (en) * 2001-04-16 2005-04-26 Tokyo Electron Limited Coating film forming method and apparatus
JP4078813B2 (ja) * 2001-06-12 2008-04-23 ソニー株式会社 成膜装置および成膜方法
US20030116432A1 (en) * 2001-12-26 2003-06-26 Applied Materials, Inc. Adjustable throw reactor
KR100838065B1 (ko) * 2002-05-31 2008-06-16 삼성에스디아이 주식회사 박막증착기용 고정장치와 이를 이용한 고정방법
AU2003275239A1 (en) * 2002-09-30 2004-04-23 Miasole Manufacturing apparatus and method for large-scale production of thin-film solar cells
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
JP2004152702A (ja) * 2002-10-31 2004-05-27 Applied Materials Inc マイクロ波イオン源
US7380690B2 (en) * 2003-01-17 2008-06-03 Ricoh Company, Ltd. Solution jet type fabrication apparatus, method, solution containing fine particles, wiring pattern substrate, device substrate
KR101032338B1 (ko) * 2003-02-06 2011-05-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치의 제작방법
US7972467B2 (en) * 2003-04-17 2011-07-05 Applied Materials Inc. Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor
JP2005002450A (ja) * 2003-06-13 2005-01-06 Pioneer Electronic Corp 蒸着方法、蒸着ヘッド、及び有機エレクトロルミネッセンス表示パネルの製造装置
JP4124046B2 (ja) * 2003-07-10 2008-07-23 株式会社大阪チタニウムテクノロジーズ 金属酸化物被膜の成膜方法および蒸着装置
JP4399206B2 (ja) * 2003-08-06 2010-01-13 株式会社アルバック 薄膜製造装置
TW200508413A (en) * 2003-08-06 2005-03-01 Ulvac Inc Device and method for manufacturing thin films
KR100958573B1 (ko) * 2003-10-06 2010-05-18 엘지디스플레이 주식회사 액정표시패널의 제조장치 및 제조방법
US7439208B2 (en) * 2003-12-01 2008-10-21 Superconductor Technologies, Inc. Growth of in-situ thin films by reactive evaporation
US8944002B2 (en) * 2004-01-14 2015-02-03 Honda Motor Co., Ltd. High throughput physical vapor deposition system for material combinatorial studies
DE102004009772A1 (de) * 2004-02-28 2005-09-15 Aixtron Ag CVD-Reaktor mit Prozesskammerhöhenstabilisierung
JP4169719B2 (ja) * 2004-03-30 2008-10-22 Ｈｏｙａ株式会社 レジスト膜付基板の製造方法
US20050241579A1 (en) * 2004-04-30 2005-11-03 Russell Kidd Face shield to improve uniformity of blanket CVD processes
US7780821B2 (en) * 2004-08-02 2010-08-24 Seagate Technology Llc Multi-chamber processing with simultaneous workpiece transport and gas delivery
US8882914B2 (en) * 2004-09-17 2014-11-11 Intermolecular, Inc. Processing substrates using site-isolated processing
KR100790392B1 (ko) * 2004-11-12 2008-01-02 삼성전자주식회사 반도체 제조장치
US7789963B2 (en) * 2005-02-25 2010-09-07 Tokyo Electron Limited Chuck pedestal shield
JP4676366B2 (ja) * 2005-03-29 2011-04-27 三井造船株式会社 成膜装置
JP2006322016A (ja) * 2005-05-17 2006-11-30 Konica Minolta Holdings Inc 真空蒸着方法および真空蒸着装置
JP4624856B2 (ja) * 2005-05-30 2011-02-02 東京エレクトロン株式会社 プラズマ処理装置
JP4527660B2 (ja) * 2005-06-23 2010-08-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN1891848A (zh) * 2005-07-01 2007-01-10 鸿富锦精密工业（深圳）有限公司 光学镀膜装置
WO2007042797A1 (en) * 2005-10-11 2007-04-19 Aviza Technology Limited Positive displacement pumping chamber
US7897217B2 (en) * 2005-11-18 2011-03-01 Tokyo Electron Limited Method and system for performing plasma enhanced atomic layer deposition
CN101124349A (zh) * 2005-12-06 2008-02-13 新明和工业株式会社 等离子体成膜装置
BRPI0709199A2 (pt) * 2006-03-26 2011-06-28 Lotus Applied Technology Llc sistema e método para depositar uma pelìcula fina em um substrato flexìvel
CN101432080B (zh) * 2006-05-01 2012-02-15 株式会社爱发科 印刷装置
TW200816880A (en) * 2006-05-30 2008-04-01 Matsushita Electric Ind Co Ltd Atmospheric pressure plasma generating method, plasma processing method and component mounting method using same, and device using these methods
US7722778B2 (en) * 2006-06-28 2010-05-25 Lam Research Corporation Methods and apparatus for sensing unconfinement in a plasma processing chamber
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
US8771483B2 (en) * 2007-09-05 2014-07-08 Intermolecular, Inc. Combinatorial process system
US8334015B2 (en) * 2007-09-05 2012-12-18 Intermolecular, Inc. Vapor based combinatorial processing
US7572686B2 (en) * 2007-09-26 2009-08-11 Eastman Kodak Company System for thin film deposition utilizing compensating forces
JP5276420B2 (ja) * 2008-01-31 2013-08-28 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US7824935B2 (en) * 2008-07-02 2010-11-02 Intermolecular, Inc. Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
US20100044213A1 (en) * 2008-08-25 2010-02-25 Applied Materials, Inc. Coating chamber with a moveable shield
JP5075793B2 (ja) * 2008-11-06 2012-11-21 東京エレクトロン株式会社 可動ガス導入構造物及び基板処理装置
DE112009002468B4 (de) * 2008-11-14 2020-01-02 Ulvac, Inc. Dünnschicht-Niederschlagsvorrichtung, organische EL-Element-Herstellungsvorrichtung und organische Dünnschicht-Niederschlagsverfahren
KR101067608B1 (ko) * 2009-03-30 2011-09-27 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리장치 및 기판처리방법
EP2281921A1 (en) * 2009-07-30 2011-02-09 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition.
US8657959B2 (en) * 2009-07-31 2014-02-25 E I Du Pont De Nemours And Company Apparatus for atomic layer deposition on a moving substrate
US20110023775A1 (en) * 2009-07-31 2011-02-03 E.I. Du Pont De Nemours And Company Apparatus for atomic layer deposition
US8529700B2 (en) * 2009-08-31 2013-09-10 E I Du Pont De Nemours And Company Apparatus for gaseous vapor deposition
JP5469966B2 (ja) * 2009-09-08 2014-04-16 東京応化工業株式会社 塗布装置及び塗布方法
JP5439097B2 (ja) * 2009-09-08 2014-03-12 東京応化工業株式会社 塗布装置及び塗布方法
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
JP5705495B2 (ja) * 2010-10-07 2015-04-22 株式会社日立ハイテクノロジーズ プラズマの処理方法及びプラズマ処理装置
US8728241B2 (en) * 2010-12-08 2014-05-20 Intermolecular, Inc. Combinatorial site-isolated deposition of thin films from a liquid source
EP2481832A1 (en) * 2011-01-31 2012-08-01 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus for atomic layer deposition
US20120238075A1 (en) * 2011-03-09 2012-09-20 Tokyo Ohka Kogyo Co., Ltd. Coating apparatus and coating method
US8906207B2 (en) * 2011-04-06 2014-12-09 Intermolecular, Inc. Control of film composition in co-sputter deposition by using collimators
US20130130509A1 (en) * 2011-11-21 2013-05-23 Intermolecular, Inc. Combinatorial spot rastering for film uniformity and film tuning in sputtered films
US8974649B2 (en) * 2011-12-12 2015-03-10 Intermolecular, Inc. Combinatorial RF bias method for PVD
US8582105B1 (en) * 2012-06-14 2013-11-12 Intermolecular, Inc. Method and apparatus for leak detection in H2Se furnace

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6746539B2 (en) * 2001-01-30 2004-06-08 Msp Corporation Scanning deposition head for depositing particles on a wafer
US20060127599A1 (en) * 2002-02-12 2006-06-15 Wojak Gregory J Process and apparatus for preparing a diamond substance
US20060231031A1 (en) * 2002-12-12 2006-10-19 Otb Group B.V. Method and apparatus for treating a substrate
US20050016463A1 (en) 2003-06-13 2005-01-27 Pioneer Corporation Evaporative deposition method, evaporative deposition head, method for forming pattern of deposition material, and evaporative deposition material disk
JP2005120456A (ja) 2003-10-20 2005-05-12 Seiko Epson Corp 蒸着装置、有機エレクトロルミネッセンスパネルおよび蒸着方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120080790A1 (en) * 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Apparatus and method for uniform metal plating
US8188575B2 (en) * 2010-10-05 2012-05-29 Skyworks Solutions, Inc. Apparatus and method for uniform metal plating
US8415770B2 (en) 2010-10-05 2013-04-09 Skyworks Solutions, Inc. Apparatus and methods for uniform metal plating
US20150336120A1 (en) * 2012-12-21 2015-11-26 Manish Khandelwal Deposition cloud tower with adjustable field
US10413932B2 (en) * 2012-12-21 2019-09-17 Doosan Fuel Cell America, Inc. Deposition cloud tower with an insert for adjusting the deposition area

Also Published As

Publication number Publication date
US20140311408A1 (en) 2014-10-23
JP5357159B2 (ja) 2013-12-04
EP2186116A4 (en) 2016-10-26
JP2010538168A (ja) 2010-12-09
KR20100068411A (ko) 2010-06-23
EP2186116A1 (en) 2010-05-19
US20110209663A1 (en) 2011-09-01
KR101534886B1 (ko) 2015-07-07
WO2009032960A1 (en) 2009-03-12
US20090068849A1 (en) 2009-03-12
US8770143B2 (en) 2014-07-08
CN101842874B (zh) 2011-12-14
CN101842874A (zh) 2010-09-22
TWI407497B (zh) 2013-09-01
TW200939323A (en) 2009-09-16

Similar Documents

Publication Publication Date Title
US8039052B2 (en) Multi-region processing system and heads
JP5500593B2 (ja) 組み合わせ処理システム
US20150184298A1 (en) Methods and Apparatus for Combinatorial PECVD or PEALD
US8821987B2 (en) Combinatorial processing using a remote plasma source
US8822313B2 (en) Surface treatment methods and systems for substrate processing
KR20140057208A (ko) 조합식 및 풀 기판 스퍼터 증착 도구 및 방법
US9087864B2 (en) Multipurpose combinatorial vapor phase deposition chamber
US8709270B2 (en) Masking method and apparatus
US20130156530A1 (en) Method and apparatus for reducing contamination of substrate
US20140183161A1 (en) Methods and Systems for Site-Isolated Combinatorial Substrate Processing Using a Mask
US20130130509A1 (en) Combinatorial spot rastering for film uniformity and film tuning in sputtered films
US8835329B2 (en) Reactor cell isolation using differential pressure in a combinatorial reactor
US11749554B2 (en) Multi-wafer deposition tool for reducing residual deposition on transfer blades and methods of operating the same
US20140179095A1 (en) Methods and Systems for Controlling Gate Dielectric Interfaces of MOSFETs
US20140134849A1 (en) Combinatorial Site Isolated Plasma Assisted Deposition
US8486821B1 (en) Method and apparatus for variable conductance
US20140178583A1 (en) Combinatorial Methods and Systems for Developing Thermochromic Materials and Devices

Legal Events

Date Code Title Description
AS Assignment

Owner name: INTERMOLECULAR, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ENDO, RICK;WEINER, KURT;DE, INDRANIL;AND OTHERS;REEL/FRAME:026093/0538

Effective date: 20071212

ZAAA Notice of allowance and fees due

Free format text: ORIGINAL CODE: NOA

ZAAB Notice of allowance mailed

Free format text: ORIGINAL CODE: MN/=.

STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8

FEPP Fee payment procedure

Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

LAPS Lapse for failure to pay maintenance fees

Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20231018