JP5500593B2 - 組み合わせ処理システム - Google Patents
組み合わせ処理システム Download PDFInfo
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- JP5500593B2 JP5500593B2 JP2010524196A JP2010524196A JP5500593B2 JP 5500593 B2 JP5500593 B2 JP 5500593B2 JP 2010524196 A JP2010524196 A JP 2010524196A JP 2010524196 A JP2010524196 A JP 2010524196A JP 5500593 B2 JP5500593 B2 JP 5500593B2
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- B01J2219/00277—Apparatus
- B01J2219/00351—Means for dispensing and evacuation of reagents
- B01J2219/00427—Means for dispensing and evacuation of reagents using masks
- B01J2219/0043—Means for dispensing and evacuation of reagents using masks for direct application of reagents, e.g. through openings in a shutter
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01J2219/00527—Sheets
- B01J2219/00536—Sheets in the shape of disks
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Description
Claims (16)
- 組み合わせ処理チャンバであって、
第1の軸の周囲に集まり、第2の軸を中心として回転する回転可能なアッセンブリに取り付けられた複数の蒸着ヘッドと;
第3の軸を中心として回転する回転可能な基板支持部と;
前記基板支持部の一部を露出させる開口部を有するベースプレートと;
を具えており、
前記第1の軸、前記第2の軸、及び前記第3の軸が互いにオフセットしており、
前記開口部が前記第1の軸に揃っていることを特徴とするチャンバ。 - 前記ベースプレートが、前記回転可能なアッセンブリに側壁を通して取り付けられており、前記第2の軸を中心として回転することを特徴とする請求項1に記載のチャンバ。
- 前記回転可能なアッセンブリ及び回転可能な前記ベースプレートが、共通の直径を有することを特徴とする請求項2に記載のチャンバ。
- さらに、前記ベースプレートから前記複数の蒸着ヘッドを隔離し得るバリヤを具えることを特徴とする請求項1に記載のチャンバ。
- 請求項1に記載の組み合わせ処理チャンバを使用して基板を組み合わせ処理するための方法であって、
基板の隔離領域へのアクセスを与える開口部の上方で軸方向に分布した一群の蒸着ヘッドから前記基板の隔離領域を処理するステップと;
前記軸方向に分布した蒸着ヘッドに対する前記基板の位置を変えるステップと;
前記基板の別の隔離領域を処理するステップと;
を具えることを特徴とする方法。 - 前記一群の蒸着ヘッドが、前記開口部を含む前記基板の一部の上方の処理チャンバの中に隔離されることを特徴とする請求項5に記載の方法。
- さらに、前記基板の多数の隔離領域を同時に処理するステップを具えることを特徴とする請求項5に記載の方法。
- 材料層を蒸着した後に、処理領域の下部から前記一群の蒸着ヘッドを隔離するステップと;
前記蒸着ヘッドのうちの1つに取り付けられたターゲットを変えるステップと;
を具えることを特徴とする請求項5に記載の方法。 - 前記基板の位置を変えるステップが、前記基板の軸を中心として及び前記基板の軸からオフセットした軸を中心として、前記基板を回転させるステップを有することを特徴とする請求項5に記載の方法。
- 組み合わせ処理チャンバであって、
第1の軸の周囲に集まり、第2の軸を中心として回転する回転可能なアッセンブリに取り付けられた複数の蒸着ヘッドと;
中心軸である第3の軸及び前記中心軸からオフセットした第4の軸を中心として回転する回転可能な基板支持部と;
前記基板支持部の一部を露出させる開口部を有するベースプレートと;
前記基板支持部の一部の上方に規定された処理領域の中に軸方向に配置された一群の蒸着ヘッドを隔離するための手段と;
前記第3及び第4の軸を中心として前記基板支持部を回転させるための手段と;
前記基板支持部の一部の領域にアクセスを与えるための手段であって、当該アクセスを与えるための手段を通して前記蒸着ヘッドから材料層を蒸着し得る手段と;
を具えており、
前記第1の軸、前記第2の軸、及び前記第3の軸が互いにオフセットしており、
前記開口部が前記第1の軸に揃っていることを特徴とするチャンバ。 - 前記基板支持部の軸が、前記一群の蒸着ヘッドの軸とは異なることを特徴とする請求項10に記載のチャンバ。
- さらに、鉛直面でそれぞれの前記蒸着ヘッドを移動させるための手段を具えることを特徴とする請求項10に記載のチャンバ。
- 組み合わせ処理チャンバであって、
第1の軸の周囲に集まり、第2の軸を中心として回転する回転可能なアッセンブリに取り付けられた複数の蒸着ヘッドと;
第3の軸を中心として回転する回転可能な基板支持部と;
少なくとも1つの蒸着ヘッドを収容し、前記基板支持部の一部を露出させる開口部を有するベースプレートを含む、サブチャンバと;
前記基板支持部によって規定される実質的に全ての領域へのアクセスを前記開口部が与える一方、前記少なくとも1つの蒸着ヘッドと前記開口部との間の整列を維持するように、前記サブチャンバに対して前記基板支持部を移動させるための少なくとも1つの駆動部と;
を具えており、
前記第1の軸、前記第2の軸、及び前記第3の軸が互いにオフセットしており、
前記開口部が前記第1の軸に揃っていることを特徴とする組み合わせ処理チャンバ。 - 前記駆動部が、前記サブチャンバ又は前記基板支持部のうちの一方を回転させることを特徴とする請求項13に記載のチャンバ。
- 前記少なくとも1つの駆動部が、中心軸を中心として前記基板支持部を回転させ、
さらに、偏心軸を中心として前記基板支持部を回転させるための別の駆動部を有することを特徴とする請求項13に記載のチャンバ。 - 前記基板支持部が、前記基板支持部の周縁の周りに規定される第1の回転シールを有しており、
前記基板支持部が、前記第1の回転シールを包含する第2の回転シールを有するプレートに組み込まれることを特徴とする請求項13に記載のチャンバ。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US96995507P | 2007-09-05 | 2007-09-05 | |
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CN (1) | CN101919027B (ja) |
TW (1) | TWI409900B (ja) |
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- 2008-09-05 CN CN200880113968.8A patent/CN101919027B/zh not_active Expired - Fee Related
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EP2186115A2 (en) | 2010-05-19 |
US8449678B2 (en) | 2013-05-28 |
US8758581B2 (en) | 2014-06-24 |
TWI409900B (zh) | 2013-09-21 |
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US20150093898A1 (en) | 2015-04-02 |
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CN101919027A (zh) | 2010-12-15 |
US20090069924A1 (en) | 2009-03-12 |
US20090061108A1 (en) | 2009-03-05 |
WO2009033067A3 (en) | 2010-07-29 |
EP2186115A4 (en) | 2014-04-30 |
US20090061087A1 (en) | 2009-03-05 |
TW200933782A (en) | 2009-08-01 |
US8771483B2 (en) | 2014-07-08 |
CN101919027B (zh) | 2012-09-05 |
JP2011503345A (ja) | 2011-01-27 |
KR20100065347A (ko) | 2010-06-16 |
US8387563B2 (en) | 2013-03-05 |
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