WO2017035008A1 - Method and apparatus for co-sputtering multiple targets - Google Patents
Method and apparatus for co-sputtering multiple targets Download PDFInfo
- Publication number
- WO2017035008A1 WO2017035008A1 PCT/US2016/047849 US2016047849W WO2017035008A1 WO 2017035008 A1 WO2017035008 A1 WO 2017035008A1 US 2016047849 W US2016047849 W US 2016047849W WO 2017035008 A1 WO2017035008 A1 WO 2017035008A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- targets
- shield
- substrate
- shrouds
- chamber
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
Definitions
- Embodiments of the present disclosure relate to methods and apparatus for depositing materials on a substrate by physical vapor deposition (PVD).
- PVD physical vapor deposition
- PVD Physical vapor deposition
- the targets are typically composed of the alloy to be sputtered.
- alloys of different compositions are used.
- the inventors are investigating co-sputtering of multiple targets in a multi-cathode (e.g. , multi- target) PVD chamber.
- the targets are cleaned periodically to maintain film consistency.
- one or more of the multiple targets may be covered by shutters during the cleaning process, which may lead to particle generation.
- a process chamber includes a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.
- a physical vapor deposition (PVD) chamber includes a substrate support to support a substrate; a plurality of targets disposed opposite the substrate support, each target comprising a material to be sputtered onto the substrate; and a shield rotatably disposed between the substrate support and the plurality of targets, wherein the shield includes two or more holes sized and positioned to simultaneously expose a set of two or more of the plurality of targets while covering the remainder of the plurality of targets, wherein different sets of two or more of the plurality of targets can be exposed while covering the remainder of the plurality of targets by selection of the rotational position of the shield.
- PVD physical vapor deposition
- a method of processing a substrate includes exposing a first set of a plurality of targets through two or more holes of a shield, wherein the shield is rotatably coupled to a carrier disposed above a substrate support supporting a substrate; and co-sputtering the first set of the plurality of targets.
- Figure 1 depicts a cross-sectional view of a multi-cathode processing chamber in accordance with some embodiments of the present disclosure.
- Figure 1A depicts a bottom schematic view of a rotating shield in the multi- cathode processing chamber of Figure 1 .
- Figure 2 depicts an isometric view of a shield for use in a multi-cathode processing chamber in accordance with some embodiments of the present disclosure.
- Figure 3 is a flowchart depicting a method of processing a substrate in accordance with some embodiments of the present disclosure.
- Embodiments of methods and apparatus for co-sputtering multiple target materials are provided herein.
- the disclosed methods and apparatus may advantageously allow co-sputtering of a plurality of targets while substantially minimizing or eliminating cross-contamination between targets.
- a multi cathode-PVD chamber includes a plurality of cathodes, or targets, (for example, 5 cathodes) attached to a top adapter.
- Each cathode can have a DC/Pulse DC or RF target and an associated magnetron.
- Each cathode also has a shroud which is long tube which does not block a line of sight from the target to wafer.
- a common rotating shield is provided in the center of the chamber that is shared by all the cathodes. Depending on the number of targets that need to be sputtered at the same time, the rotating shield can have one or more holes, such as 1 , 2, or 3 holes.
- the shroud surrounding each target advantageously captures a majority of the target flux that is not directed towards the wafer and hence likely to land on the wafer, thus significantly minimizing target cross- contamination.
- the shroud material and surface treatment can be tailored to a specific target material being sputtered, thus improving defect performance.
- a process shield can be provided to divide the process cavity into a number of sections corresponding to each cathode target.
- the process shield advantageously similarly limits or eliminates cross-contamination but with no rotating parts.
- the process cavity can be divided into 5 equal sections with a process shield that is shaped like a star.
- the process shield is as long as possible to avoid cross talk.
- the process shield can have Z-Theta motion.
- the process shield can be positioned at different cathodes during deposition on the wafer. Then during a paste step the process shield can be rotated to a different cathode.
- the deposited stress from materials from the deposition and paste cathodes can cancel each other or at least reduce stress in the film deposited on the process shield, thus yielding a very low stress film with very good particle performance.
- flexibility of co-sputtering from any number of cathodes is possible.
- FIG. 1 depicts a cross-sectional view of a multi-cathode process chamber (process chamber 100) in accordance with some embodiments of the present disclosure.
- the process chamber 100 includes a plurality of cathodes 102 coupled to an upper portion of the process chamber 100, a rotating shield 106 to selectively cover one or more of the plurality of cathodes 102, and a substrate support 1 10 disposed within the process chamber 100 below the plurality of cathodes 102.
- the substrate support 1 10 may be a rotating pedestal.
- the substrate support 1 10 may be vertically movable.
- the plurality of cathodes 102 can be used for sputtering different materials on a substrate 108.
- the substrate 108 is a structure having a semiconductor material used for fabrication of integrated circuits.
- the substrate 108 can represent a semiconductor structure including a wafer.
- the cathodes 102 are exposed through openings or holes 104 of the rotating shield 106, which are disposed over the substrate 108 on the substrate support 1 10. Materials from the cathodes 102 can be deposited onto the substrate 108 (e.g. , materials 103 as shown in Figure 1 ) through the holes 104.
- a power supply 1 12 may be coupled to each of the plurality of cathodes 102.
- the power supply 1 12 may include direct current (DC), pulsed DC, or radio frequency (RF) power.
- the rotating shield 106 may expose two or more of the plurality of cathodes 102 and shield remaining cathodes 102 from cross- contamination during sputtering. The cross-contamination results from physical movement or transfer of a deposition material from one of the cathodes 102 to another one of the cathodes 102.
- Each cathode 102 is positioned over a corresponding target 1 14.
- the rotating shield 106 may have two or more holes 104 to selectively expose corresponding ones or more targets to be co-sputtered (two holes illustratively shown in Figure 1A). To sputter selected targets, the rotating shield 106 is rotated to expose the selected targets to be sputtered.
- the targets 1 14 may be formed of any material desired to be sputtered onto the substrate 108.
- a motor 131 is coupled to the rotating shield 106 via a shaft 132 to facilitate the rotation of the rotating shield 106.
- each cathode 102 includes a shroud 126 which is a long tube that does not block a line of sight from the target 1 14 to a substrate disposed on the substrate support 1 10.
- Each shroud 126 includes a shroud rotation 128 to provide the cathodes 102 at an angle 130 of about 20 to 90 degrees. Different values of the angle 130 provide different uniformity profiles on a surface of the substrate. The angle 130 is measured between a plane of one of the targets 1 14 and a plane of the substrate support 1 10.
- Each shroud is configured to capture a majority of the target flux that is not directed towards and hence likely to land on substrate. As such, the shrouds significantly minimize target cross contamination. Additionally, the shroud material and surface treatment of the shroud may be tailored to specific target materials, thus improving defect performance.
- the substrate 108 Before the substrate 108 moves into or out of the chamber, the substrate 108 can move below a conical shield 1 18 disposed on a lower portion of the process chamber.
- a telescopic cover ring 120 is disposed on top of the conical shield 1 18 and surrounds the substrate 108.
- the substrate support 1 10 moves down, the substrate 108 can be lifted up with a robotic arm before the substrate 108 moves out of the chamber.
- the telescopic cover ring 120 can include a ring portion 122 that curves up and has a predefined thickness to form a dish or bowl in which the substrate can be disposed with the ring portion 122 surrounding and disposed above the substrate 108.
- the telescopic cover ring 120 can also include a predefined gap 124 and a predefined length with respect to the conical shield 1 18.
- FIG. 2 depicts an isometric view of an alternative shield for use in a multi- cathode process chamber, such as the process chamber 100, which can be used in place of the rotating shield 106.
- a process shield (process shield 200) may be used to achieve similar results as the rotating shield 106, described above, but without any rotating parts.
- the process shield 200 extends between adjacent pairs of targets.
- the process shield 200 may comprise several walls disposed between adjacent targets.
- the process shield 200 may be star-shaped, for example, comprising several walls coupled at a centerline and extending radially outward toward the edges of the process cavity to prevent a direct line of site from a given target to any of the other targets.
- the process shield 200 may further include an outer wall (not shown) connecting the walls extending outward from the centerline to surround each target.
- the plurality of targets includes five targets and the process cavity is divided into five equivalent sections by the process shield 200.
- the process shield 200 has a length sufficient to avoid cross talk between targets 1 14. In some embodiments, all of the targets 1 14 may be exposed so that any of the targets 1 14 may be selected for sputtering.
- the process shield 200 significantly reduces contamination of a non- sputtered target by a sputtered target by an order of magnitude more than without any shield or shrouds.
- the process shield 200 advantageously allows for the flexibility of choosing any one or more of targets to be sputtered without having to move any parts to selectively expose the targets to be sputtered.
- the process shield 200 may optionally have Z-Theta motion, so that sections of the process shield 200 may be positioned at different cathodes 102 during deposition on the substrate and, subsequently, rotated to different cathodes 102 during a paste step.
- the Z-theta motion comprises vertical movement of the process shield 200 followed by rotational movement to selectively expose a given section of the process shield 200, which was originally surrounding one of the targets 1 14, to a different one of the targets 1 14.
- the stress associated from deposition of materials from the deposition and paste cathodes at least partially offset each other, advantageously yielding a very low stress film with improved particle performance.
- materials deposited on a given section of the process shield 200 during a first step may exhibit a tensile stress.
- the process shield 200 is rotated so that the given section is disposed around a cathode yielding a material that exhibits a compressive stress.
- the tensile and compressive forces from the two different materials deposited on the given section offset each other.
- flexibility of co-sputtering from any number of cathodes is possible.
- the cathodes 102 do not include shrouds since the process shield 200 significantly reduces or eliminates cross-contamination of targets 1 14 being co-sputtered.
- each cathode 102 may alternatively include a shroud 226, which is shorter than the shrouds 126 depicted in the Figure 1 .
- the shrouds 226 may advantageously significantly reduce or eliminate contamination of the top adapter.
- the shrouds 226 may be between about 1 inch long as opposed to the shrouds 126, which may be between about 5 inches and about 6 inches long.
- the shrouds 226 may be formed of aluminum or any other metal that has desirable thermal conductivity and surface finish to facilitate adherence of the sputtered material onto the shroud.
- the shrouds 226 may be texturized to improve particle adhesion.
- the shrouds 226 may be bead-blasted or coated with a coating to facilitate adherence of the sputtered material onto the shroud.
- the shrouds 126 of Figure 1 may be similarly texturized.
- the coating may be formed of an aluminum arc spray, a tantalum arc spray, a molybdenum arc spray, or the like.
- the process shield 200 have any shape that divides each cathode 102 into a separate space without interfering with the deposition of the sputtered material onto the substrate being processed.
- the star shaped process shield 200 has a height less than about 15 inches. The more the height of the process shield 200 exceeds 15 inches, the more process shield 200 begins to interfere with the deposition of the sputtered material onto the substrate being processed. If the target diameter is greater than 6 inches, then the height of the process shield 200 may also be greater than 15 inches without adversely affecting the deposition process. In other words, the height of the process shield 200 is proportional to the diameter of each of the targets. In any case, each target has a diameter at least half of the diameter of the substrate to be processed.
- FIG. 3 is a flow chart depicting a method of co-sputtering a plurality of targets.
- a first set of a plurality of targets is exposed through two or more holes of a process shield (e.g., rotating shield 106) while the remaining targets are covered by the shield.
- a process shield e.g., rotating shield 106
- the first set of targets is co-sputtered.
- DC or RF energy may be applied to each of the first set of targets to sputter material from the first set of targets onto the substrate.
- a process gas is supplied into the chamber, a plasma is formed from the process gas using RF energy supplied from each respective cathode, and ions from the plasma are caused to bombard the target to sputter materials from the respective target onto the substrate.
- the shield 106 is rotated to expose a second set of the plurality of targets while covering the remaining targets (i.e., the first set of targets and/or additional ones of the plurality of targets).
- the second set of targets is co-sputtered in a similar manner as the first set of targets, as detailed above. Because each target 1 14 includes a corresponding shroud 126, the accumulation of target material on a given shroud corresponds to one target. As such, cross-contamination is advantageously avoided. In some embodiments, targets that are not exposed through holes in the shield 106 may be sputtered onto the backside of the shield 106 in a cleaning process so that a cleaner film may be deposited onto the substrate from the cleaned target.
- the plurality of targets are all exposed and one or more of the targets are sputtered, as desired. That is, the method for co-sputtering targets using the process shield 200 is similar to the method 300, except that there is no need to expose a first and second set of targets to co-sputter each set. Instead, because all the targets are exposed in the embodiments in which the process shield 200 is used, a first set of the plurality of targets 1 14 is co-sputtered and, subsequently, a second set (different than the first set) of the plurality of targets 1 14 is co-sputtered.
- the process shield 200 is of sufficient height to avoid cross-contamination of the targets, rotation of the shield is not necessary to selectively expose different sets of targets. Thus, throughput is advantageously increased.
- the process shield 200 may be coupled to the rotating shield 106 to provide further protection from cross- contamination.
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018528214A JP6916789B2 (en) | 2015-08-21 | 2016-08-19 | Methods and equipment for simultaneous sputtering of multiple targets |
CN201680048305.7A CN107923033B (en) | 2015-08-21 | 2016-08-19 | Method and apparatus for co-sputtering multiple targets |
EP16839899.8A EP3337914B1 (en) | 2015-08-21 | 2016-08-19 | Method and apparatus for co-sputtering multiple targets |
KR1020187007936A KR102667749B1 (en) | 2015-08-21 | 2016-08-19 | Method and apparatus for co-sputtering multiple targets |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IN2595DE2015 | 2015-08-21 | ||
IN2595/DEL/2015 | 2015-08-21 | ||
US15/240,927 US10468238B2 (en) | 2015-08-21 | 2016-08-18 | Methods and apparatus for co-sputtering multiple targets |
US15/240,927 | 2016-08-18 |
Publications (1)
Publication Number | Publication Date |
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WO2017035008A1 true WO2017035008A1 (en) | 2017-03-02 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/US2016/047849 WO2017035008A1 (en) | 2015-08-21 | 2016-08-19 | Method and apparatus for co-sputtering multiple targets |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021154557A1 (en) * | 2020-01-27 | 2021-08-05 | Applied Materials, Inc. | Physical vapor deposition apparatus and methods with gradient thickness target |
CN113439130A (en) * | 2019-03-01 | 2021-09-24 | 应用材料公司 | Physical vapor deposition system and process |
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US6217730B1 (en) * | 1999-04-15 | 2001-04-17 | Nihon Shinku Gijutsu Kabushiki Kaisha | Sputtering device |
US6290826B1 (en) * | 1996-10-21 | 2001-09-18 | Nihon Shinku Gijutsu Kabushiki Kaisha | Composite sputtering cathode assembly and sputtering apparatus with such composite sputtering cathode assembly |
US20060231392A1 (en) * | 2005-04-14 | 2006-10-19 | Ravi Mullapudi | Cross-contaminant shield in sputtering system |
US20120142197A1 (en) * | 2007-09-05 | 2012-06-07 | Intermolecular, Inc. | Combinatorial process system |
US20140272684A1 (en) * | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
-
2016
- 2016-08-19 WO PCT/US2016/047849 patent/WO2017035008A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US6290826B1 (en) * | 1996-10-21 | 2001-09-18 | Nihon Shinku Gijutsu Kabushiki Kaisha | Composite sputtering cathode assembly and sputtering apparatus with such composite sputtering cathode assembly |
US6217730B1 (en) * | 1999-04-15 | 2001-04-17 | Nihon Shinku Gijutsu Kabushiki Kaisha | Sputtering device |
US20060231392A1 (en) * | 2005-04-14 | 2006-10-19 | Ravi Mullapudi | Cross-contaminant shield in sputtering system |
US20120142197A1 (en) * | 2007-09-05 | 2012-06-07 | Intermolecular, Inc. | Combinatorial process system |
US20140272684A1 (en) * | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113439130A (en) * | 2019-03-01 | 2021-09-24 | 应用材料公司 | Physical vapor deposition system and process |
CN113439130B (en) * | 2019-03-01 | 2024-03-08 | 应用材料公司 | Physical vapor deposition system and process |
WO2021154557A1 (en) * | 2020-01-27 | 2021-08-05 | Applied Materials, Inc. | Physical vapor deposition apparatus and methods with gradient thickness target |
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