TWI721409B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI721409B
TWI721409B TW108115169A TW108115169A TWI721409B TW I721409 B TWI721409 B TW I721409B TW 108115169 A TW108115169 A TW 108115169A TW 108115169 A TW108115169 A TW 108115169A TW I721409 B TWI721409 B TW I721409B
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Taiwan
Prior art keywords
semiconductor
insulator
conductor
oxide semiconductor
transistor
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TW108115169A
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English (en)
Chinese (zh)
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TW201933615A (zh
Inventor
山崎舜平
下村明久
佐藤裕平
山根靖正
山元良高
須沢英臣
田中哲弘
岡崎豊
奧野直樹
石山貴久
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日商半導體能源研究所股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
TW108115169A 2013-12-19 2014-12-11 半導體裝置 TWI721409B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-262873 2013-12-19
JP2013262873 2013-12-19

Publications (2)

Publication Number Publication Date
TW201933615A TW201933615A (zh) 2019-08-16
TWI721409B true TWI721409B (zh) 2021-03-11

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TW108115169A TWI721409B (zh) 2013-12-19 2014-12-11 半導體裝置
TW103143320A TWI666770B (zh) 2013-12-19 2014-12-11 半導體裝置

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US (3) US9882059B2 (https=)
JP (2) JP2015135961A (https=)
KR (1) KR102330407B1 (https=)
TW (2) TWI721409B (https=)

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TWI766588B (zh) 2015-10-30 2022-06-01 日商半導體能源研究所股份有限公司 電容器、半導體裝置、模組以及電子裝置的製造方法
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KR102480052B1 (ko) 2016-06-09 2022-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
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TWI726026B (zh) * 2016-06-27 2021-05-01 日商半導體能源硏究所股份有限公司 電晶體以及半導體裝置
TWI875084B (zh) 2016-07-11 2025-03-01 日商半導體能源研究所股份有限公司 金屬氧化物及半導體裝置
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TWI720263B (zh) 2017-10-30 2021-03-01 聯華電子股份有限公司 電晶體結構以及其製造方法
KR102794026B1 (ko) * 2018-03-12 2025-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물 및 금속 산화물을 포함한 트랜지스터
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WO2020049396A1 (ja) * 2018-09-05 2020-03-12 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
WO2020049425A1 (ja) 2018-09-05 2020-03-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US12062723B2 (en) * 2018-09-07 2024-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP7564104B2 (ja) * 2019-07-17 2024-10-08 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
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KR102711918B1 (ko) * 2019-12-27 2024-09-27 엘지디스플레이 주식회사 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치

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