TWI693720B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI693720B
TWI693720B TW107118179A TW107118179A TWI693720B TW I693720 B TWI693720 B TW I693720B TW 107118179 A TW107118179 A TW 107118179A TW 107118179 A TW107118179 A TW 107118179A TW I693720 B TWI693720 B TW I693720B
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TW
Taiwan
Prior art keywords
film
oxide semiconductor
transistor
semiconductor film
insulating film
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TW107118179A
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English (en)
Chinese (zh)
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TW201834254A (zh
Inventor
鈴木康太
畑勇氣
家田義紀
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日商半導體能源研究所股份有限公司
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Publication of TW201834254A publication Critical patent/TW201834254A/zh
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Publication of TWI693720B publication Critical patent/TWI693720B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
TW107118179A 2013-09-06 2014-09-04 半導體裝置 TWI693720B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013184560 2013-09-06
JP2013-184560 2013-09-06

Publications (2)

Publication Number Publication Date
TW201834254A TW201834254A (zh) 2018-09-16
TWI693720B true TWI693720B (zh) 2020-05-11

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW107118179A TWI693720B (zh) 2013-09-06 2014-09-04 半導體裝置
TW103130574A TWI632682B (zh) 2013-09-06 2014-09-04 半導體裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103130574A TWI632682B (zh) 2013-09-06 2014-09-04 半導體裝置

Country Status (4)

Country Link
US (1) US9391157B2 (enExample)
JP (7) JP6356541B2 (enExample)
KR (1) KR102294507B1 (enExample)
TW (2) TWI693720B (enExample)

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TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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US10714633B2 (en) 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR20180123028A (ko) 2016-03-11 2018-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치
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US10879064B2 (en) 2016-12-27 2020-12-29 Sharp Kabushiki Kaisha Method for manufacturing semiconductor device and film forming apparatus
WO2018123660A1 (ja) 2016-12-27 2018-07-05 シャープ株式会社 酸化物半導体ｔｆｔを備えた半導体装置
JP2018157101A (ja) * 2017-03-17 2018-10-04 東芝メモリ株式会社 トランジスタ、メモリ及びトランジスタの製造方法
JP6853770B2 (ja) * 2017-11-30 2021-03-31 株式会社Ｊｏｌｅｄ 半導体装置および表示装置
JP7663555B2 (ja) * 2020-03-20 2025-04-16 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法
JP2024039928A (ja) * 2022-09-12 2024-03-25 株式会社デンソー 半導体装置
KR20240086302A (ko) 2022-12-09 2024-06-18 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 표시장치

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