TWI665173B - 氧化物燒結體、其製造方法及濺鍍靶 - Google Patents

氧化物燒結體、其製造方法及濺鍍靶 Download PDF

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TWI665173B
TWI665173B TW103145552A TW103145552A TWI665173B TW I665173 B TWI665173 B TW I665173B TW 103145552 A TW103145552 A TW 103145552A TW 103145552 A TW103145552 A TW 103145552A TW I665173 B TWI665173 B TW I665173B
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Taiwan
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sintered body
oxide sintered
phase
oxide
elements
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TW103145552A
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English (en)
Chinese (zh)
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TW201533005A (zh
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Shigekazu Tomai
笘井重和
Kazuyoshi Inoue
井上一吉
Kazuaki Ebata
江端一晃
Masatoshi Shibata
柴田雅敏
Futoshi Utsuno
宇都野太
Yuki TSURUMA
霍間勇輝
Yu Ishihara
石原悠
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Idemitsu Kosan Co., Ltd.
日商出光興產股份有限公司
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TW103145552A 2013-12-27 2014-12-25 氧化物燒結體、其製造方法及濺鍍靶 TWI665173B (zh)

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Application Number Priority Date Filing Date Title
JP2013-272384 2013-12-27
JP2013272384 2013-12-27

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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016017546A1 (ja) * 2014-08-01 2016-02-04 住友金属鉱山株式会社 酸化インジウム系酸化物焼結体とその製造方法
WO2017017966A1 (ja) * 2015-07-30 2017-02-02 出光興産株式会社 結晶質酸化物半導体薄膜、結晶質酸化物半導体薄膜の製造方法及び薄膜トランジスタ
JP2017178740A (ja) * 2016-03-31 2017-10-05 出光興産株式会社 酸化物焼結体及びスパッタリングターゲット
CN109311756B (zh) * 2016-06-17 2022-07-22 出光兴产株式会社 氧化物烧结体以及溅射靶
CN109641757B (zh) * 2016-08-31 2022-02-25 出光兴产株式会社 石榴石型化合物、含有该化合物的烧结体以及溅射靶
WO2018066547A1 (ja) * 2016-10-04 2018-04-12 出光興産株式会社 酸化物焼結体及びスパッタリングターゲット
JP7187322B2 (ja) * 2017-02-01 2022-12-12 出光興産株式会社 結晶質酸化物半導体薄膜、積層体の製造方法、薄膜トランジスタ、薄膜トランジスタの製造方法、電子機器、車載用表示装置
WO2018181716A1 (ja) * 2017-03-30 2018-10-04 出光興産株式会社 ガーネット化合物、酸化物焼結体、酸化物半導体薄膜、薄膜トランジスタ、電子機器、およびイメージセンサー
EP3613717A4 (en) * 2017-04-17 2021-01-06 Shin-Etsu Chemical Co., Ltd. TRANSPARENT CERAMICS MADE OF PARAMAGNETIC GARNET, MAGNETO-OPTICAL MATERIAL AND MAGNETO-OPTICAL DEVICE
JP6397592B1 (ja) 2017-10-02 2018-09-26 住友化学株式会社 スパッタリングターゲットの製造方法およびスパッタリングターゲット
CN109279893A (zh) * 2018-08-22 2019-01-29 吉林建筑大学 钬铥双掺钆镓石榴石激光透明陶瓷制备方法
CN113195434B (zh) * 2018-12-28 2023-08-08 出光兴产株式会社 烧结体
JP6853421B2 (ja) 2019-03-28 2021-03-31 出光興産株式会社 結晶酸化物薄膜、積層体及び薄膜トランジスタ
TWI719820B (zh) * 2020-01-31 2021-02-21 光洋應用材料科技股份有限公司 銦鋯氧化物靶材及其製法及銦鋯氧化物薄膜
CN113072091B (zh) * 2021-03-25 2022-05-20 南昌航空大学 一种五元铈钕钇基高熵稀土氧化物及其制备方法
JPWO2023063348A1 (https=) 2021-10-14 2023-04-20
CN120981441A (zh) * 2023-03-29 2025-11-18 出光兴产株式会社 氧化物烧结体、溅射靶、氧化物薄膜、薄膜晶体管及电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077358A (ja) * 1998-08-27 2000-03-14 Asahi Glass Co Ltd 透明導電膜、スパッタリングターゲットおよび透明導電膜付き基体
JP2007045902A (ja) * 2005-08-09 2007-02-22 Canon Inc 酸化物、発光素子及び表示装置
TW201014812A (en) * 2008-09-19 2010-04-16 Idemitsu Kosan Co Oxide sintered body and sputtering target
WO2010070944A1 (ja) * 2008-12-15 2010-06-24 出光興産株式会社 酸化インジウム系焼結体及びスパッタリングターゲット

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4611198B2 (ja) * 2003-03-04 2011-01-12 Jx日鉱日石金属株式会社 光情報記録媒体用の非晶質性保護膜を形成するためのスパッタリングターゲット、光情報記録媒体用の非晶質性保護膜及びその製造方法
JP4628685B2 (ja) * 2004-02-17 2011-02-09 Jx日鉱日石金属株式会社 光情報記録媒体用スパッタリングターゲット及び光情報記録媒体
EP1905864B1 (en) 2005-07-15 2013-06-12 Idemitsu Kosan Company Limited In Sm OXIDE SPUTTERING TARGET
JP5016831B2 (ja) * 2006-03-17 2012-09-05 キヤノン株式会社 酸化物半導体薄膜トランジスタを用いた発光素子及びこれを用いた画像表示装置
JP5244327B2 (ja) 2007-03-05 2013-07-24 出光興産株式会社 スパッタリングターゲット
JP5237557B2 (ja) 2007-01-05 2013-07-17 出光興産株式会社 スパッタリングターゲット及びその製造方法
JP5237558B2 (ja) 2007-01-05 2013-07-17 出光興産株式会社 スパッタリングターゲット及び酸化物半導体膜
US8333913B2 (en) * 2007-03-20 2012-12-18 Idemitsu Kosan Co., Ltd. Sputtering target, oxide semiconductor film and semiconductor device
WO2009008297A1 (ja) * 2007-07-06 2009-01-15 Sumitomo Metal Mining Co., Ltd. 酸化物焼結体とその製造方法、ターゲット、及びそれを用いて得られる透明導電膜ならびに透明導電性基材
JP2009115916A (ja) * 2007-11-02 2009-05-28 Fdk Corp 磁気光学デバイス
CN102105619B (zh) * 2008-06-06 2014-01-22 出光兴产株式会社 氧化物薄膜用溅射靶及其制造方法
JP2010047829A (ja) * 2008-08-20 2010-03-04 Toyoshima Seisakusho:Kk スパッタリングターゲットおよびその製造方法
WO2010024034A1 (ja) * 2008-08-27 2010-03-04 出光興産株式会社 スパッタリングターゲット及びそれからなる酸化物半導体薄膜
CN102459122B (zh) * 2009-06-05 2014-02-05 吉坤日矿日石金属株式会社 氧化物烧结体、其制造方法以及氧化物烧结体制造用原料粉末
CN102482155B (zh) * 2009-08-05 2014-07-02 住友金属矿山株式会社 氧化物烧结体和其制造方法、靶及透明导电膜
JP5491258B2 (ja) * 2010-04-02 2014-05-14 出光興産株式会社 酸化物半導体の成膜方法
JP5817327B2 (ja) * 2010-09-29 2015-11-18 東ソー株式会社 酸化物焼結体、その製造方法、それを用いて得られる酸化物透明導電膜及び太陽電池
JP2012144410A (ja) 2011-01-14 2012-08-02 Kobelco Kaken:Kk 酸化物焼結体およびスパッタリングターゲット
DE112012007295B3 (de) * 2011-06-08 2022-02-03 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen eines Sputtertargets und Verfahren zum Herstellen einer Halbleitervorrichtung
JP5327282B2 (ja) * 2011-06-24 2013-10-30 住友金属鉱山株式会社 透明導電膜製造用焼結体ターゲット
JP5942414B2 (ja) * 2011-12-21 2016-06-29 東ソー株式会社 複合酸化物焼結体、ターゲット、酸化物透明導電膜及びその製法
CN109311756B (zh) * 2016-06-17 2022-07-22 出光兴产株式会社 氧化物烧结体以及溅射靶

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077358A (ja) * 1998-08-27 2000-03-14 Asahi Glass Co Ltd 透明導電膜、スパッタリングターゲットおよび透明導電膜付き基体
JP2007045902A (ja) * 2005-08-09 2007-02-22 Canon Inc 酸化物、発光素子及び表示装置
TW201014812A (en) * 2008-09-19 2010-04-16 Idemitsu Kosan Co Oxide sintered body and sputtering target
WO2010070944A1 (ja) * 2008-12-15 2010-06-24 出光興産株式会社 酸化インジウム系焼結体及びスパッタリングターゲット

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