WO2009008297A1 - 酸化物焼結体とその製造方法、ターゲット、及びそれを用いて得られる透明導電膜ならびに透明導電性基材 - Google Patents

酸化物焼結体とその製造方法、ターゲット、及びそれを用いて得られる透明導電膜ならびに透明導電性基材 Download PDF

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Publication number
WO2009008297A1
WO2009008297A1 PCT/JP2008/061957 JP2008061957W WO2009008297A1 WO 2009008297 A1 WO2009008297 A1 WO 2009008297A1 JP 2008061957 W JP2008061957 W JP 2008061957W WO 2009008297 A1 WO2009008297 A1 WO 2009008297A1
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Prior art keywords
target
phase
transparent conductive
oxide sinter
sinter
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PCT/JP2008/061957
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English (en)
French (fr)
Inventor
Tokuyuki Nakayama
Yoshiyuki Abe
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Sumitomo Metal Mining Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sumitomo Metal Mining Co., Ltd. filed Critical Sumitomo Metal Mining Co., Ltd.
Priority to US12/452,063 priority Critical patent/US8440115B2/en
Priority to KR1020157005168A priority patent/KR101596211B1/ko
Priority to KR1020157005160A priority patent/KR101646488B1/ko
Priority to JP2009522592A priority patent/JP5655306B2/ja
Priority to CN200880021217A priority patent/CN101679124A/zh
Priority to EP08777760.3A priority patent/EP2168933B1/en
Priority to TW097125208A priority patent/TWI453175B/zh
Publication of WO2009008297A1 publication Critical patent/WO2009008297A1/ja
Priority to US13/834,305 priority patent/US8801973B2/en

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    • Y10T428/31935—Ester, halide or nitrile of addition polymer

Abstract

　高速成膜とノジュールレスを実現できるスパッタリング用ターゲット或いはイオンプレーティング用タブレット、それを得るのに最適な酸化物焼結体とその製造方法、それを用いて得られ青色光の吸収の少ない低抵抗の透明導電膜を提供する。 　インジウムとガリウムを酸化物として含有する酸化物焼結体において、ビックスバイト型構造のＩｎ２Ｏ３相が主たる結晶相となり、その中にβ－Ｇａ２Ｏ３型構造のＧａＩｎＯ３相、又はＧａＩｎＯ３相と（Ｇａ，Ｉｎ）２Ｏ３相が平均粒径５μｍ以下の結晶粒として微細に分散しており、ガリウムの含有量がＧａ／（Ｉｎ＋Ｇａ）原子数比で１０原子％以上３５原子％未満であることを特徴とする酸化物焼結体などにより提供する。
PCT/JP2008/061957 2007-07-06 2008-07-02 酸化物焼結体とその製造方法、ターゲット、及びそれを用いて得られる透明導電膜ならびに透明導電性基材 WO2009008297A1 (ja)

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US12/452,063 US8440115B2 (en) 2007-07-06 2008-07-02 Oxide sintered body and production method therefor, target, and transparent conductive film and transparent conductive substrate obtained by using the same
KR1020157005168A KR101596211B1 (ko) 2007-07-06 2008-07-02 산화물 소결물체와 그 제조 방법, 타겟, 및 그것을 이용해 얻어지는 투명 도전막 및 투명 도전성 기재
KR1020157005160A KR101646488B1 (ko) 2007-07-06 2008-07-02 산화물 소결물체와 그 제조 방법, 타겟, 및 그것을 이용해 얻어지는 투명 도전막 및 투명 도전성 기재
JP2009522592A JP5655306B2 (ja) 2007-07-06 2008-07-02 酸化物焼結体とその製造方法、ターゲット、及びそれを用いて得られる透明導電膜ならびに透明導電性基材
CN200880021217A CN101679124A (zh) 2007-07-06 2008-07-02 氧化物烧结体及其制造方法、靶、使用该靶得到的透明导电膜以及透明导电性基材
EP08777760.3A EP2168933B1 (en) 2007-07-06 2008-07-02 Oxide sintered body, process for producing the same, target and use
TW097125208A TWI453175B (zh) 2007-07-06 2008-07-04 氧化物燒結體及其製造方法、靶及使用其所得之透明導電膜以及透明導電性基材
US13/834,305 US8801973B2 (en) 2007-07-06 2013-03-15 Oxide sintered body and production method therefor, target, and transparent conductive film and transparent conductive substrate obtained by using the same

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