TWI637488B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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TWI637488B
TWI637488B TW105125358A TW105125358A TWI637488B TW I637488 B TWI637488 B TW I637488B TW 105125358 A TW105125358 A TW 105125358A TW 105125358 A TW105125358 A TW 105125358A TW I637488 B TWI637488 B TW I637488B
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conductive
semiconductor device
film
insulating film
contact
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TW105125358A
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TW201733026A (zh
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福田夏樹
岡嶋睦
大賀淳
田中利治
山口豪
高木剛
小村政則
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東芝記憶體股份有限公司
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Abstract

本發明之實施形態之半導體裝置包含：積層體，其具有經由層間絕緣膜而積層之複數層第1導電膜；第1導電體，其與上述積層體相接且於積層方向延伸；及複數層第1絕緣膜，其等與上述複數層第1導電膜為同一層，配置於上述第1導電體與上述複數層第1導電膜之間，且上述第1導電體具有沿著1層第1絕緣膜及1層第1導電膜上而突出之突出部，上述突出部之側面係與上述1層第1導電膜之上表面接觸。

Description

半導體裝置及其製造方法
本發明之實施形態係關於一種半導體裝置及其製造方法。
作為替代以低成本且大容量著稱之快閃記憶體之半導體裝置之一種，有將可變電阻膜使用於記憶胞之可變電阻型記憶體(ReRAM：Resistance RAM)。ReRAM因可構成交叉點型之記憶胞陣列，故可實現與快閃記憶體相同之大容量化。又，為謀求更加大容量化，亦有開發相對於半導體基板於垂直方向排列選擇配線即位元線之所謂VBL(Vertical Bit Line：垂直位元線)構造之ReRAM。
本發明之實施形態係提供一種實現藉由接觸區域之小空間化而縮減晶片尺寸、且降低通道形成時之製程難度之半導體裝置及其製造方法。 實施形態之半導體裝置包含：積層體，其具有經由層間絕緣膜而積層之複數層第1導電膜；第1導電體，其與上述積層體相接且於積層方向延伸；及複數層第1絕緣膜，其等在與上述複數層第1導電膜同一層，配置於上述第1導電體與上述複數層第1導電膜之間，且上述第1導電體具有沿著1層第1絕緣膜及1層第1導電膜上而突出之突出部，上述突出部之側面係與上述1張第1導電膜之上表面接觸。
以下，一面參照圖式一面針對實施形態之半導體裝置及其製造方法進行說明。 ［第1實施形態］ 首先，針對第1實施形態之半導體裝置之整體構成進行說明。另，以下雖以使用包含可變電阻元件之記憶胞之三維構造之半導體裝置為例進行說明，但以下說明之全部之實施形態，亦包含使用包含電荷累積膜之記憶胞之情形等，且亦可應用於具有三維構造之其他半導體裝置。 圖1係顯示本實施形態之半導體裝置之功能區塊之圖。 本實施形態之半導體裝置如圖1所示，包含：記憶胞陣列1、列解碼器2、行解碼器3、上位區塊4、電源5、及控制電路6。 記憶胞陣列1具有相互交叉之複數條字線WL(導電膜)及複數條位元線BL(導電膜)、及配置於該等交叉部之複數個記憶胞MC。列解碼器2係於存取動作時選擇字線WL。行解碼器3於存取動作時選擇位元線BL，且包含控制存取動作之驅動器。上位區塊4係選擇記憶胞陣列1中之成為存取對象之記憶胞MC。上位區塊4對於列解碼器2、行解碼器3賦予列位址、行位址。電源5係於資料之寫入/讀出時，產生對應於各者之動作之特定之電壓組合，且供給至列解碼器2及行解碼器3。控制電路6按照來自外部之指令，進行對上位區塊4發送位址等之控制，再者進行電源5之控制。 接著，針對記憶胞陣列1進行說明。 圖2係本實施形態之半導體裝置之記憶胞陣列之電路圖，圖3係該半導體裝置之記憶胞陣列之概略立體圖。 記憶胞陣列1如圖2所示，除上述之字線WL、位元線BL及記憶胞MC外，並具有選擇電晶體STR、全域位元線GBL及選擇閘極線SG。 記憶胞陣列1如圖3所示，具有位元線BL相對於半導體基板SS之主平面垂直延伸之所謂VBL(Vertical Bit Line：垂直位元線)構造。即，字線WL於Y方向及Z方向(積層方向)排列成矩陣狀，且向X方向延伸。位元線BL於X方向及Y方向排列成矩陣狀，且向Z方向延伸。且，記憶胞MC配置於字線WL及位元線BL之交叉部。根據該等之點，記憶胞MC於X方向、Y方向及Z方向排列成三維矩陣狀。 記憶胞MC如圖2所示，包含可變電阻元件VR。可變電阻元件VR，基於施加電壓而於高電阻狀態及低電阻狀態間轉換。記憶胞MC根據該可變電阻元件VR之電阻狀態而非揮發性地記憶資料。可變電阻元件VR通常存在自高電阻狀態(重置狀態)轉換為低電阻狀態(設置狀態)之設置動作，與自低電阻狀態(設置狀態)轉換為高電阻狀態(重置狀態)之設置動作。又，於可變電阻元件VR中，僅於剛製造後具有必要之成形動作。該成形動作係於可變電阻元件VR內局部地形成電流易流通之區域(纖絲路徑)之動作。成形動作係以對可變電阻元件VR之兩端，施加較於設置動作及重置動作時使用之施加電壓高之電壓而執行。 選擇電晶體STR配置於位元線BL之下端及全域位元線GBL間。全部位元線GBL係如圖3所示排列於X方向，且於Y方向延伸。各全域位元線GBL共通地連接於沿Y方向排列之複數個選擇電晶體STR之一端。 選擇電晶體STR係由作為閘極發揮功能之閘極線SG而控制。選擇閘極線SG排列於Y方向，且於X方向延伸。排列於X方向之複數個選擇電晶體STR係由作為該等之閘極發揮功能之1條選擇閘極線SG一併控制。另一方面，於圖3之情形，於Y方向排列之複數個選擇電晶體STR，係由個別設置之選擇閘極線SG而獨立地予以控制。 接著，以字線WL與周邊電路之連接構造為例，針對記憶胞陣列1與半導體基板上之周邊電路之連接構造進行說明。以下，於記憶胞陣列1中，將配置與周邊電路連接的配線之區域稱為「接觸區域1b」。另，以下，雖使用記憶胞陣列具有字線WL＜0＞～＜3＞之例進行說明，但以下說明之實施形態並非限定於此者。 圖4係顯示本實施形態之半導體裝置之記憶胞陣列之接觸區域之概略構造之立體圖。 連接於記憶胞MC之各字線WL＜i＞(i＝0～3)，如圖4所示，經由2個通道Z1＜i＞(導電體)及Z0＜i＞(導電體)與配置於半導體基板上之周邊電路(未圖示)電性連接。各字線WL＜i＞於接觸區域1b中具有用以與通道Z1＜i＞接觸之接觸部分WLb＜i＞。各通道Z1＜i＞於Z方向延伸，且以貫通接觸部分WLb＜i＞之方式形成。於各通道Z1＜i＞，形成有至少於朝向X方向之兩側面突出之突出部Z1b＜i＞。通道Z1＜i＞藉由該突出部Z1b＜i＞之一個側面即底面與接觸部分WLb＜i＞之上表面接觸，而與字線WL＜i＞接觸。另一方面，各通道Z0＜i＞配置於半導體基板及最下層之字線WL＜0＞間，於底面與周邊電路電性連接。且，因通道Z1＜i＞之底面與Z0＜i＞之上表面接觸，故字線WL＜i＞與周邊電路電性連接。 此處，因各字線WL＜i＞係於Z方向積層，故於配置通道Z1＜i＞時，需要注意通道Z1＜i＞與字線WL＜i＞以外之字線WL＜j＞(j=i以外之0～3)之干涉。 就該點，於本實施形態中，將字線WL＜ｉ＞之接觸部分WLb＜i＞形成於自比其更上層之字線WL＜u＞(u=i～3)之配置區域超出之位置。如為圖4之例之情形，於Z方向積層之複數條字線WL之端部形成為階梯狀，將相當於階梯之台階之部分作為接觸部分WLb發揮功能。藉此，可迴避通道Z1＜ｉ＞與上層之字線WL＜u＞之干涉。 然而，僅如此無法迴避通道Z1＜ｉ＞與字線WL＜l＞(l=0～i-1)之干涉。 因此，於本實施形態中，進而將字線WL與周邊電路之連接構造設為以下。 圖5係本實施形態之半導體裝置之記憶胞陣列之接觸區域之剖視圖。圖5係以圖4所示之一點鏈線及虛線所示之範圍a101～a104之剖視圖。 記憶胞陣列1包含：層間絕緣膜102，其將通道Z0與於X方向上相鄰之通道Z0間絕緣；蝕刻阻止膜103，其配置於通道Z0及層間絕緣膜102上；層間絕緣膜104及字線WL，其等交替地配置於蝕刻阻止膜103上；層間絕緣膜106，其配置於自Z方向觀察之各部位(以範圍a101～a104所示之位置)之最上層之字線WL＜i＞(i＝0～3)上；及層間絕緣膜107，其配置於層間絕緣膜106上。此處通道Z0例如由氮化鈦(TiN)形成。層間絕緣膜102、104及107由氧化矽(SiO2 )形成。蝕刻阻止膜103例如由氧化金屬形成。字線WL例如由氮化鈦(TiN)形成。層間絕緣膜106係以與層間絕緣膜104及107不同之材料形成，例如由氮化矽(SiN)形成。 又，記憶胞陣列1具有於Z方向延伸，且至少自層間絕緣膜106之上表面至字線WL＜i＞之底面之通道Z1＜i＞。於圖5之情形，通道Z1＜i＞係自層間絕緣膜107之上表面至通道Z0＜i＞之上表面。通道Z1＜i＞貫通所接觸之字線WL＜i＞之接觸部分WLb＜i＞。於各通道Z1＜i＞之側面與字線WL＜0＞～＜i＞之側面之間配置有絕緣膜109，兩者不接觸。絕緣膜109係以與層間絕緣膜106不同之材料形成，例如由氧化矽(SiO2 )形成。又，各通道Z1＜i＞係於與層間絕緣膜106相同高度具有向X方向之兩側突出之突出部Z1b＜i＞。該突出部Z1b＜i＞具有於X方向超過絕緣膜109而到達接觸部分WLb＜i＞之寬度，其底面與接觸部分WLb＜i＞及絕緣膜109接觸。即，藉由上述記憶胞陣列1之接觸區域1b之連接構造，通道Z1＜i＞與字線WL＜i＞接觸，另一方面，與下層之字線WL＜l＞絕緣。 接著，針對記憶胞陣列1之接觸區域1b之製造步驟進行說明。 圖6～13係說明本實施形態之半導體裝置之記憶胞陣列之接觸區域之製造步驟之剖視圖。 首先，於各導電膜101＜i＞(i=0～3)及層間絕緣膜102上將蝕刻阻止膜103成膜。各導電膜101＜i＞例如以氮化鈦(TiN)形成，且作為通道Z0＜i＞發揮功能。蝕刻阻止膜103例如以氧化金屬形成，於後述步驟之孔122之形成之時，成為用以抑制對於導電膜101之過度蝕刻之膜。接著，於蝕刻阻止膜103上交替積層複數層層間絕緣膜104及導電膜105。此處，層間絕緣膜104例如以氧化矽(SiO2 )形成。導電膜105例如由氮化鈦(TiN)形成，且作為字線WL發揮功能。接著，如圖6所示，於記憶胞陣列1之接觸區域1b中，將複數層導電膜105形成為階梯狀。藉此，於各導電膜105＜i＞，形成接觸部分105b＜i＞。 接著，於包含導電膜101＜0＞～＜3＞之積層導電膜上將層間絕緣膜106成膜。該層間絕緣膜106與各接觸部分105b＜i＞接觸。層間絕緣膜106係以相對於層間絕緣膜104及以後述步驟形成之層間絕緣膜107、絕緣膜109之材料可取得蝕刻之選擇比之材料形成。若層間絕緣膜104、107及絕緣膜109以氧化矽(SiO2 )形成，則該層間絕緣膜106例如以氮化矽(SiN)形成。接著，對於層間絕緣膜106上成膜層間絕緣膜107。此處，層間絕緣膜107例如以氧化矽(SiO2 )形成。接著，如圖7所示，於層間絕緣膜107上將具有通道Z1之圖案之抗蝕劑膜121成膜。 接著，如圖8所示，藉由使用抗蝕劑膜121之異向性蝕刻，於各接觸部分105b＜i＞之位置，形成自層間絕緣膜107上表面至蝕刻阻止膜103之上表面之孔122＜i＞。 接著，如圖9所示，藉由使用抗蝕劑膜121之異向性蝕刻，持續挖鑿各孔122＜i＞，直到穿通蝕刻阻止膜103而使導電膜101＜i＞之上表面露出為止。另，於圖8及圖9所示之步驟之時，亦可同時形成複數個孔122。 接著，如圖10所示，藉由經由孔122＜i＞之等向性蝕刻，選擇性地去除於孔122＜i＞之側面露出之導電膜105＜0＞～＜i＞之端部(圖10之以虛線表示之部位105e)。 接著，於去除抗蝕劑膜121後，如圖11所示，對圖10所示之部位105e埋入絕緣膜109。絕緣膜109例如以氧化矽(SiO2 )形成。 接著，如圖12所示，藉由經由孔122＜i＞之等向性蝕刻，選擇性地去除於孔122＜i＞之側面露出之層間絕緣膜106之端部，直到各部位之最上層之導電膜105＜i＞之上表面露出為止。藉此，於孔122＜i＞之側面，形成用於配置與接觸部分105b＜i＞接觸之通道Z1＜i＞之突出部Z1b＜i＞之部位106e。 最後，如圖13所示，於對孔122＜i＞埋入導電膜108＜i＞後，藉由CMP(Chemical Mechanical Polishing：化學機械研磨)等，將導電膜108＜i＞之上表面平坦化。導電膜108＜i＞例如以氮化鈦(TiN)形成，且作為通道Z1＜i＞發揮功能。藉此，如圖5所示，形成接觸於字線WL＜i＞與通道Z0＜i＞之通道Z1＜i＞。 藉由以上之製造步驟，形成圖5所示之記憶胞陣列1之接觸區域1b之連接構造。 接著，使用比較例，針對本實施形態之效果進行說明。 此處使用之比較例之半導體裝置係藉由自字線至上層配線之第1通道(相當於本實施形態之通道Z1)、通過字線之配置區域外而自上層配線至第3通道(相當於本實施形態之通道Z0)之第2通道、及自第2通道至周邊電路之第3通道，而將各字線與周邊電路電性連接。另，第1通道不具有相當於本實施形態之突出部Z1b之部分，其底面與字線之上表面直接接觸。於比較例之情形，藉由使自字線至周邊電路之電流路徑一度迂迴至上層配線，而迴避下層之字線與通道之干涉。 於比較例之情形，每1條字線需要3條通道。尤其，相對於記憶胞陣列之接觸區域，為配置第2通道故需要額外空間，因而使得晶片尺寸增大。 就該點，於本實施形態之情形，相對於1條字線WL配置2條通道Z1及Z0即可，於自Z方向觀察之情形時，只要準備1條通道之配置區域即可。即，根據本實施形態，相較於比較例，將用於配置通道之空間抑制在一半以下。 又，於比較例之情形，如上所述，因第1通道之底面與字線之上表面直接接觸，故於形成配置第1通道之孔(相當於本實施形態之122)時，必須將該孔之底面對準於字線之上表面。此處，若要考慮形成與高度不同之複數條字線接觸之複數條第1通道之情形，配置該等第1通道之複數個孔會變成各自具有不同之深度。因此，若要同時形成該等孔，會因較深之孔之蝕刻之影響，而有將較淺之孔過度蝕刻之虞。尤其於嚴重之情形下，亦有孔不僅貫穿應與第1通道接觸之字線、甚至到達更下層之字線之情形。 就該點，於本實施形態之情形，不僅可使複數條通道Z1之底面之位置一致，且具有以各通道Z1＜i＞貫穿字線WL＜0＞～＜i＞為前提之接觸構造。因此，於同時形成複數個孔122之情形，可排除如比較例般於形成深度不同之孔時之過度蝕刻之風險。 如以上，根據本實施形態，可提供一種實現藉由接觸區域之小空間化而縮減晶片尺寸、且降低通道形成時之製程難度之半導體裝置及其製造方法。 ［第2實施形態］ 首先，針對第2實施形態，以字線WL與周邊電路之連接構造為例，說明記憶胞陣列1與半導體基板上之周邊電路之連接構造。 圖14係本實施形態之半導體裝置之記憶胞陣列之接觸區域之剖視圖。圖14係通道Z1＜3＞周邊之剖視圖。 本實施形態之通道Z1＜i＞(i=0～3，圖14之情形i=3)具有僅於朝X方向之側面之一方形成之突出部Z1b＜i＞，且僅於X方向之一方側與字線WL＜i＞接觸。 於第1實施形態之情形，突出部Z1b＜i＞雖以包圍通道Z1＜i＞之整周之方式形成，但於如本實施形態般突出部Z1b＜i＞僅形成於通道Z1＜i＞之周圍之一部分之情形下，仍可與字線WL＜i＞接觸。即，根據本實施形態，即使為字線WL＜i＞具有未包圍通道Z1＜i＞之整周之形狀之接觸部分WLb＜i＞之情形，亦與第1實施形態相同，可形成通道Z1＜i＞與字線WL＜i＞之接觸。 接著，針對記憶胞陣列1之接觸區域1b之製造步驟進行說明。 圖15～18係說明本實施形態之半導體裝置之記憶胞陣列之接觸區域之製造步驟之剖視圖。 首先，於作為通道Z1＜i＞(i=0～3，圖15～18之情形i=3)發揮功能之導電膜201＜i＞(相當於圖6之101)與層間絕緣膜202(相當於圖6之102)上，形成包含蝕刻阻止膜203(相當於圖6之103)、複數層層間絕緣膜204(相當於圖6之104)、作為複數條字線WL而發揮功能之複數層導電膜205(相當於圖6之105)、及層間絕緣膜206(相當於圖7之106)之積層體。此處，層間絕緣膜206係以相對於層間絕緣膜204及以後述之步驟形成之層間絕緣膜207(相當於圖7之107)及絕緣膜209(相當於圖11之109)之材料可取得蝕刻之選擇比之材料形成。接著，於導電膜201＜i＞之位置去除層間絕緣膜204、導電膜205及層間絕緣膜206之端部後，於導電膜201＜i＞、層間絕緣膜202及層間絕緣膜206上將層間絕緣膜207成膜。接著，如圖15所示，於層間絕緣膜207上成膜具有通道Z1＜i＞之圖案之抗蝕劑膜221。 接著，如圖16所示，藉由使用抗蝕劑膜221之異向性蝕刻，於導電膜205之端部於側面顯露之位置，自層間絕緣膜206之上表面至導電膜201＜i＞之上表面形成孔222＜i＞。 接著，藉由經由孔222＜i＞之等向性蝕刻，選擇性地去除於孔222＜i＞之側面露出之導電膜205＜0＞～＜i＞之端部。接著，如圖17所示，對該去除之部位埋入絕緣膜209。 接著，如圖18所示，藉由經由孔222＜i＞之等向性蝕刻，選擇性地去除於孔222＜i＞之側面露出之層間絕緣膜206之端部，直到導電膜205＜i＞之上表面露出為止。藉此，於孔222＜i＞之側面之一方，形成配置與接觸部分205b＜i＞接觸之通道Z1＜i＞之突出部Z1b＜i＞之部位206e。 接著，剝離抗蝕劑膜221。最後，於對孔222＜i＞埋入作為通道Z1＜i＞發揮功能之導電膜後，藉由CMP等，將該導電膜之上表面平坦化。藉此，如圖14所示，形成與字線WL＜i＞及通道Z0＜i＞接觸之通道Z1＜i＞。 藉由以上之製造步驟，形成圖14所示之記憶胞陣列1之接觸區域1b之連接構造。 以上，根據本實施形態，於以通道之周圍之一部分與記憶胞陣列之配線接觸之情形，亦可獲得與第1實施形態相同之效果。 ［其他］ 以上已說明本發明之若干實施形態，但該等實施形態係作為範例提示者，而非意在限定發明之範圍。該等新穎之實施形態得以其他各種形態實施，在不脫離發明之主旨之範圍內，可進行各種省略、替換及變更。該等實施形態及其變化含在發明之範圍及主旨內，且含在在申請專利範圍所記載之發明及其等效之範圍內。
1‧‧‧記憶胞陣列
1b‧‧‧接觸區域
2‧‧‧列解碼器
3‧‧‧行解碼器
4‧‧‧上位區塊
5‧‧‧電源
6‧‧‧控制電路
101＜0＞‧‧‧導電膜
101＜1＞‧‧‧導電膜
101＜2＞‧‧‧導電膜
101＜3＞‧‧‧導電膜
102‧‧‧層間絕緣膜
103‧‧‧蝕刻阻止膜
104‧‧‧層間絕緣膜
105＜0＞‧‧‧導電膜
105＜1＞‧‧‧導電膜
105＜2＞‧‧‧導電膜
105＜3＞‧‧‧導電膜
105b＜0＞‧‧‧接觸部分
105b＜1＞‧‧‧接觸部分
105b＜2＞‧‧‧接觸部分
105b＜3＞‧‧‧接觸部分
105e‧‧‧部位
106‧‧‧層間絕緣膜
106e‧‧‧部位
107‧‧‧層間絕緣膜
108＜0＞‧‧‧導電膜
108＜1＞‧‧‧導電膜
108＜2＞‧‧‧導電膜
108＜3＞‧‧‧導電膜
109‧‧‧絕緣膜
121‧‧‧抗蝕劑膜
122＜0＞‧‧‧孔
122＜1＞‧‧‧孔
122＜2＞‧‧‧孔
122＜3＞‧‧‧孔
201＜3＞‧‧‧導電膜
202‧‧‧層間絕緣膜
203‧‧‧蝕刻阻止膜
204‧‧‧層間絕緣膜
205＜0＞‧‧‧導電膜
205＜1＞‧‧‧導電膜
205＜2＞‧‧‧導電膜
205＜3＞‧‧‧導電膜
205b＜3＞‧‧‧接觸部分
206‧‧‧層間絕緣膜
206e‧‧‧部位
207‧‧‧層間絕緣膜
209‧‧‧絕緣膜
221‧‧‧抗蝕劑膜
222＜3＞‧‧‧孔
a101‧‧‧範圍
a102‧‧‧範圍
a103‧‧‧範圍
a104‧‧‧範圍
BL‧‧‧位元線
GBL‧‧‧全域位元線
MC‧‧‧記憶胞
SG‧‧‧選擇閘極線
SS‧‧‧半導體基板
STR‧‧‧選擇電晶體
VR‧‧‧可變電阻元件
WL‧‧‧字線
WL＜0＞‧‧‧字線
WL＜1＞‧‧‧字線
WL＜2＞‧‧‧字線
WL＜3＞‧‧‧字線
WLb＜0＞‧‧‧接觸部分
WLb＜1＞‧‧‧接觸部分
WLb＜2＞‧‧‧接觸部分
WLb＜3＞‧‧‧接觸部分
X‧‧‧方向
Y‧‧‧方向
Z‧‧‧方向
Z0＜0＞‧‧‧通道
Z0＜1＞‧‧‧通道
Z0＜2＞‧‧‧通道
Z0＜3＞‧‧‧通道
Z1＜0＞‧‧‧通道
Z1＜1＞‧‧‧通道
Z1＜2＞‧‧‧通道
Z1＜3＞‧‧‧通道
Z1b＜0＞‧‧‧接觸部分
Z1b＜1＞‧‧‧接觸部分
Z1b＜2＞‧‧‧接觸部分
Z1b＜3＞‧‧‧接觸部分
圖1係顯示第1實施形態之半導體裝置之功能區塊之圖。 圖2係同實施形態之半導體裝置之記憶胞陣列之電路圖。 圖3係同實施形態之半導體裝置之記憶胞陣列之概略立體圖。 圖4係顯示同實施形態之半導體裝置之記憶胞陣列之接觸區域之概略構造之立體圖。 圖5係同實施形態之半導體裝置之記憶胞陣列之接觸區域之剖視圖。 圖6～13係說明同實施形態之半導體裝置之記憶胞陣列之接觸區域之製造步驟之剖視圖。 圖14係第2實施形態之半導體裝置之記憶胞陣列之接觸區域之剖視圖。 圖15～18係說明同實施形態之半導體裝置之記憶胞陣列之接觸區域之製造步驟之剖視圖。

Claims (20)

  1. 一種半導體裝置，其包含：積層體，其包含經由層間絕緣膜而積層之複數個第1導電膜；第1導電體，其與上述積層體相接且於積層方向延伸；及複數個第1絕緣膜，其等與上述複數個第1導電膜為相同層，配置於上述第1導電體與上述複數個第1導電膜之間；且上述第1導電體包含沿著1個第1絕緣膜及1個第1導電膜上而突出之突出部，上述突出部之側面係與上述1個第1導電膜之上表面接觸；以與上述第1絕緣膜不同材料構成之第2絕緣膜配置於上述積層體之1個第1導電膜上且配置於與上述第1導電體之突出部相同之層。
  2. 如請求項1之半導體裝置，其進而包括：第3絕緣膜，其包括與上述第1絕緣膜相同之材料，配置於比上述第2絕緣膜及上述突出部更上層。
  3. 如請求項1之半導體裝置，其包含：第2導電膜，其於上述積層方向延伸；及複數個記憶胞，其等配置於上述複數個第1導電膜及上述第2導電膜之交叉部。
  4. 如請求項1之半導體裝置，其中：上述第1導電體係於自上述積層方向觀察之特定位置，與配置於最上層之上述第1導電膜接觸。
  5. 如請求項1之半導體裝置，其包含：第2導電體，其配置於上述積層方向之半導體基板及上述複數個第1導電膜間；且上述第1導電體係於其底面與上述第2導電體之上表面接觸。
  6. 如請求項1之半導體裝置，其包含：複數個上述第1導電體；且特定之第1導電體與其他第1導電體係與不同之第1導電膜接觸。
  7. 如請求項6之半導體裝置，其中：上述複數個第1導電膜係形成為各第1導電膜之端部構成1個台階之階梯狀；且上述複數個第1導電體係與形成為上述階梯狀之上述複數個第1導電膜之端部接觸。
  8. 如請求項6之半導體裝置，其中：上述複數個第1導電體係於相同之上述積層方向之位置具有底面。
  9. 如請求項1之半導體裝置，其中：上述第1導電體係於朝向與上述積層方向交叉之方向之兩側面包含上述突出部。
  10. 如請求項1之半導體裝置，其中：上述第1導電體係僅於朝向與上述積層方向交叉之方向之側面之一方包含上述突出部。
  11. 如請求項1之半導體裝置，其中：上述第1導電體之突出部係於朝向上述積層方向之側面，與一上述第1絕緣膜之上表面接觸。
  12. 一種半導體裝置之製造方法，其包含如下步驟：形成包含經積層之複數個第1導電膜之積層體；於1個上述第1導電膜上將第1絕緣膜成膜；至少自上述第1絕緣膜之上表面至特定之第1導電膜之底面，形成於積層方向延伸之孔；去除於上述孔之側面露出之上述複數個第1導電膜之端部；於經去除之上述複數個第1導電膜之端部之部位，埋入包含與上述第1絕緣膜不同材料之複數個第2絕緣膜；將於上述孔之側面露出之上述第1絕緣膜之端部去除，直到上述第1導電膜之上表面露出為止； 將第1導電體埋入上述孔。
  13. 如請求項12之半導體裝置之製造方法，其中：於去除上述第1絕緣膜之端部時，將上述第1絕緣膜及上述複數個第2絕緣膜中之上述第1絕緣膜選擇性地去除。
  14. 如請求項12之半導體裝置之製造方法，其中：於上述積層體之形成之前，於上述積層方向之半導體基板與形成上述積層體之位置之間將第2導電體成膜；且於上述孔之形成時，持續挖鑿上述積層體，直到上述第2導電體之上表面於上述孔之底部露出為止。
  15. 如請求項12之半導體裝置之製造方法，其中：於上述第2導電膜之成膜之後，且於上述積層體之形成之前，於上述第2導電體上將蝕刻阻止膜成膜。
  16. 如請求項12之半導體裝置之製造方法，其中：於上述積層體之形成之後，上述第1絕緣膜之成膜之前，自上述積層方向觀察，對特定之第1導電膜，形成自比其上層之第1導電膜之配置區域超出之第1部分。
  17. 如請求項16之半導體裝置之製造方法，其中：於上述孔之形成之時，於上述第1部分自朝向與上述孔之上述 積層方向交叉之方向之兩側面露出之位置，形成上述孔。
  18. 如請求項16之半導體裝置之製造方法，其中：於上述孔之形成之時，於上述第1部分自朝向與上述孔之上述積層方向交叉之方向之側面之一方露出之位置，形成上述孔。
  19. 如請求項16之半導體裝置之製造方法，其中：於上述第1絕緣膜之成膜之時，以與上述複數個第1導電膜之第1部分接觸之方式，將上述第1絕緣膜成膜。
  20. 如請求項16之半導體裝置之製造方法，其中：於上述孔之形成時，於上述積層方向上同時形成具有相同深度之複數個上述孔。
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