TWI611565B - 半導體裝置的製造方法 - Google Patents

半導體裝置的製造方法 Download PDF

Info

Publication number
TWI611565B
TWI611565B TW102148179A TW102148179A TWI611565B TW I611565 B TWI611565 B TW I611565B TW 102148179 A TW102148179 A TW 102148179A TW 102148179 A TW102148179 A TW 102148179A TW I611565 B TWI611565 B TW I611565B
Authority
TW
Taiwan
Prior art keywords
layer
peeling
liquid
substrate
film
Prior art date
Application number
TW102148179A
Other languages
English (en)
Chinese (zh)
Other versions
TW201419502A (zh
Inventor
江口晉吾
門馬洋平
谷敦弘
廣末美佐子
橋本健一
保坂泰靖
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201419502A publication Critical patent/TW201419502A/zh
Application granted granted Critical
Publication of TWI611565B publication Critical patent/TWI611565B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Laser Beam Processing (AREA)
TW102148179A 2006-09-29 2007-09-21 半導體裝置的製造方法 TWI611565B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006266543 2006-09-29
JP2006-266543 2006-09-29

Publications (2)

Publication Number Publication Date
TW201419502A TW201419502A (zh) 2014-05-16
TWI611565B true TWI611565B (zh) 2018-01-11

Family

ID=39256125

Family Applications (6)

Application Number Title Priority Date Filing Date
TW102148179A TWI611565B (zh) 2006-09-29 2007-09-21 半導體裝置的製造方法
TW104132152A TWI570900B (zh) 2006-09-29 2007-09-21 半導體裝置的製造方法
TW097135899A TWI433306B (zh) 2006-09-29 2007-09-21 半導體裝置的製造方法
TW096135534A TWI450387B (zh) 2006-09-29 2007-09-21 半導體裝置的製造方法
TW097135901A TWI379409B (en) 2006-09-29 2007-09-21 Method for manufacturing semiconductor device
TW097135900A TWI430435B (zh) 2006-09-29 2007-09-21 半導體裝置的製造方法

Family Applications After (5)

Application Number Title Priority Date Filing Date
TW104132152A TWI570900B (zh) 2006-09-29 2007-09-21 半導體裝置的製造方法
TW097135899A TWI433306B (zh) 2006-09-29 2007-09-21 半導體裝置的製造方法
TW096135534A TWI450387B (zh) 2006-09-29 2007-09-21 半導體裝置的製造方法
TW097135901A TWI379409B (en) 2006-09-29 2007-09-21 Method for manufacturing semiconductor device
TW097135900A TWI430435B (zh) 2006-09-29 2007-09-21 半導體裝置的製造方法

Country Status (5)

Country Link
US (6) US8048777B2 (enExample)
JP (8) JP5070166B2 (enExample)
KR (12) KR101383120B1 (enExample)
CN (6) CN101154562A (enExample)
TW (6) TWI611565B (enExample)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101150996B1 (ko) * 2004-09-24 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US20070183184A1 (en) * 2006-02-03 2007-08-09 Semiconductor Energy Laboratory Ltd. Apparatus and method for manufacturing semiconductor device
US8137417B2 (en) 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
US8048777B2 (en) 2006-09-29 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2010153813A (ja) * 2008-11-18 2010-07-08 Semiconductor Energy Lab Co Ltd 発光装置及びその作製方法、並びに、携帯電話機
JP5586920B2 (ja) * 2008-11-20 2014-09-10 株式会社半導体エネルギー研究所 フレキシブル半導体装置の作製方法
US7989356B2 (en) * 2009-03-24 2011-08-02 Stats Chippac, Ltd. Semiconductor device and method of forming enhanced UBM structure for improving solder joint reliability
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
TWI473213B (zh) * 2009-07-20 2015-02-11 鴻海精密工業股份有限公司 柔性半導體器件之製造方法
JP2011029504A (ja) * 2009-07-28 2011-02-10 Toshiba Corp 実装構造体
US9847243B2 (en) * 2009-08-27 2017-12-19 Corning Incorporated Debonding a glass substrate from carrier using ultrasonic wave
EP2290679B1 (de) * 2009-09-01 2016-05-04 EV Group GmbH Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats (z.B. eines Halbleiterwafers) von einem Trägersubstrat durch Verformung eines auf einem Filmrahmen montierten flexiblen Films
KR102236140B1 (ko) 2009-09-16 2021-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
CN102947923B (zh) * 2010-06-02 2015-11-25 库卡系统有限责任公司 制造装置和方法
JP5902406B2 (ja) 2010-06-25 2016-04-13 株式会社半導体エネルギー研究所 分離方法および半導体装置の作製方法
EP3659490B1 (en) 2010-08-20 2025-10-01 Veran Medical Technologies, Inc. Apparatus and method for four dimensional soft tissue navigation
KR101267529B1 (ko) * 2010-10-30 2013-05-24 엘지디스플레이 주식회사 플렉서블한 유기전계 발광소자 제조 방법
TR201900380T4 (tr) 2011-01-14 2019-02-21 3Sae Tech Inc Termal mekanik difüzyon sistemi ve yöntemi.
JP5695535B2 (ja) 2011-09-27 2015-04-08 株式会社東芝 表示装置の製造方法
JP5888927B2 (ja) 2011-10-06 2016-03-22 株式会社ディスコ ダイアタッチフィルムのアブレーション加工方法
CN103998646A (zh) * 2011-12-21 2014-08-20 应用材料公司 用于处理基板的系统和方法
WO2013161893A1 (ja) * 2012-04-24 2013-10-31 コニカミノルタ株式会社 積層ガスバリア性樹脂基材の製造方法
JP6178077B2 (ja) * 2013-01-23 2017-08-09 株式会社ディスコ ウエーハの加工方法
KR102309244B1 (ko) 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2014144715A1 (en) 2013-03-15 2014-09-18 Memorial Sloan-Kettering Cancer Center Hsp90-targeted cardiac imaging and therapy
KR102082407B1 (ko) 2013-04-03 2020-02-28 삼성디스플레이 주식회사 플렉서블 기판, 플렉서블 표시 장치, 및 플렉서블 표시 장치의 제조 방법
TWI515852B (zh) * 2013-05-01 2016-01-01 友達光電股份有限公司 主動元件基板與其之製作方法
KR102187752B1 (ko) 2013-05-07 2020-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 박리 장치
TWI685026B (zh) 2013-08-06 2020-02-11 日商半導體能源研究所股份有限公司 剝離方法
CN103456689B (zh) * 2013-08-13 2015-02-25 京东方科技集团股份有限公司 用于将柔性基板与玻璃基板分离的装置及生产设备
CN103456900B (zh) * 2013-08-20 2016-07-06 Tcl集团股份有限公司 柔性显示装置的制造方法
WO2015029806A1 (en) * 2013-08-30 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Processing apparatus and processing method of stack
KR102104334B1 (ko) * 2013-09-04 2020-04-27 삼성디스플레이 주식회사 유기 발광 표시 장치의 제조방법
TW201943069A (zh) * 2013-09-06 2019-11-01 日商半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
US9981457B2 (en) 2013-09-18 2018-05-29 Semiconductor Emergy Laboratory Co., Ltd. Manufacturing apparatus of stack
JP6513929B2 (ja) 2013-11-06 2019-05-15 株式会社半導体エネルギー研究所 剥離方法
KR102516162B1 (ko) 2013-12-02 2023-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제조방법
JP6496666B2 (ja) * 2013-12-03 2019-04-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI732735B (zh) 2013-12-03 2021-07-11 日商半導體能源研究所股份有限公司 剝離裝置以及疊層體製造裝置
CN105793957B (zh) * 2013-12-12 2019-05-03 株式会社半导体能源研究所 剥离方法及剥离装置
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6548871B2 (ja) 2014-05-03 2019-07-24 株式会社半導体エネルギー研究所 積層体の基板剥離装置
WO2015170210A1 (en) * 2014-05-03 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Separation apparatus for thin film stacked body
JP2016021560A (ja) 2014-06-20 2016-02-04 株式会社半導体エネルギー研究所 剥離装置
US9799829B2 (en) 2014-07-25 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Separation method, light-emitting device, module, and electronic device
KR101546068B1 (ko) 2014-08-14 2015-08-20 주식회사 엘지화학 패널로부터 편광 필름을 박리하기 위한 박리바, 이를 이용한 박리 장치 및 박리 방법
TWI584703B (zh) * 2014-08-22 2017-05-21 友達光電股份有限公司 顯示模組基板及其製造方法
CN104201096B (zh) * 2014-09-04 2017-11-24 广州新视界光电科技有限公司 一种解离剂、解离工艺、柔性显示器件制备及其制备工艺
JP6703485B2 (ja) * 2014-09-29 2020-06-03 リンテック株式会社 半導体ウエハ加工用シート用基材、半導体ウエハ加工用シート、および半導体装置の製造方法
KR102348725B1 (ko) * 2015-04-30 2022-01-07 엘지디스플레이 주식회사 플렉서블 디스플레이 장치 및 이의 제조 방법
JP6815096B2 (ja) 2015-05-27 2021-01-20 株式会社半導体エネルギー研究所 剥離装置
US9496165B1 (en) 2015-07-09 2016-11-15 International Business Machines Corporation Method of forming a flexible semiconductor layer and devices on a flexible carrier
WO2017026279A1 (ja) * 2015-08-11 2017-02-16 東京応化工業株式会社 支持体分離装置及び支持体分離方法
CN108605397B (zh) * 2015-12-29 2020-05-05 鸿海精密工业股份有限公司 树脂薄膜的剥离方法及装置、电子装置的制造方法及有机el显示装置的制造方法
CN109315042B (zh) * 2015-12-29 2021-04-06 鸿海精密工业股份有限公司 树脂薄膜的剥离方法及装置、电子装置的制造方法
JP6822858B2 (ja) 2016-01-26 2021-01-27 株式会社半導体エネルギー研究所 剥離の起点の形成方法及び剥離方法
US10586817B2 (en) 2016-03-24 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and separation apparatus
KR102340066B1 (ko) 2016-04-07 2021-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 플렉시블 디바이스의 제작 방법
US10003023B2 (en) 2016-04-15 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US10185190B2 (en) 2016-05-11 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Display device, module, and electronic device
KR20230106750A (ko) 2016-07-29 2023-07-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 표시 모듈, 및 전자 기기
TW201808628A (zh) 2016-08-09 2018-03-16 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR102882107B1 (ko) * 2016-10-07 2025-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판
WO2018130278A1 (en) * 2017-01-11 2018-07-19 Applied Materials, Inc. Method and apparatus for processing a substrate
JP6954992B2 (ja) * 2017-03-21 2021-10-27 三井金属鉱業株式会社 配線板の製造方法
KR102436547B1 (ko) 2017-09-29 2022-08-29 삼성디스플레이 주식회사 전자 장치
KR102547124B1 (ko) 2018-03-30 2023-06-26 삼성디스플레이 주식회사 표시장치
EP3783123A4 (en) 2018-04-16 2021-11-10 Nippon Steel Corporation Induction hardening device
CN112639593B (zh) * 2018-09-10 2024-09-24 日东电工株式会社 调光元件的制造方法
CN111047980B (zh) * 2018-10-12 2021-12-14 华为技术有限公司 柔性显示面板及终端设备
TWI885128B (zh) * 2020-04-28 2025-06-01 日商東京威力科創股份有限公司 半導體裝置之製造方法、半導體製造裝置及系統
CN111524860B (zh) * 2020-05-26 2024-06-18 信利半导体有限公司 一种柔性基板的机械剥离方法及装置
CN111613625A (zh) * 2020-05-26 2020-09-01 信利半导体有限公司 柔性基板及其机械剥离方法
CN112201708B (zh) * 2020-09-27 2022-07-05 上海海事大学 一种柔性衬底卷曲量子阱薄膜材料及其制备方法
KR102974613B1 (ko) * 2021-01-07 2026-06-10 삼성디스플레이 주식회사 박리 장치 및 박리 장치의 박리 방법
CN113083386B (zh) * 2021-04-02 2023-04-18 重庆大学 一种液样简便、快速离散化芯片及其使用方法
CN115602048B (zh) * 2021-06-28 2025-09-26 广东聚华印刷显示技术有限公司 显示面板的制备方法及其处理设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003174153A (ja) * 2001-07-16 2003-06-20 Semiconductor Energy Lab Co Ltd 剥離方法および半導体装置の作製方法、および半導体装置
US20040209442A1 (en) * 2003-01-23 2004-10-21 Seiko Epson Corporation Device manufacturing method and device, electro-optic device, and electronic equipment

Family Cites Families (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2601757B2 (ja) * 1993-03-09 1997-04-16 米原 隆 エアロゾル噴霧法及びその装置
JPH08130201A (ja) * 1994-10-28 1996-05-21 Disco Abrasive Syst Ltd 混合手段を有する処理装置
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR19990028523A (ko) 1995-08-31 1999-04-15 야마모토 히데키 반도체웨이퍼의 보호점착테이프의 박리방법 및 그 장치
CN1132223C (zh) 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
US6072239A (en) 1995-11-08 2000-06-06 Fujitsu Limited Device having resin package with projections
JP2859847B2 (ja) 1996-05-20 1999-02-24 日本カーバイド工業株式会社 接着シートの剥離方法
JP4619462B2 (ja) 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
CN1143394C (zh) 1996-08-27 2004-03-24 精工爱普生株式会社 剥离方法、溥膜器件的转移方法和薄膜器件
US6127199A (en) 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
ATE261612T1 (de) 1996-12-18 2004-03-15 Canon Kk Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht
JP3012571B2 (ja) * 1997-09-22 2000-02-21 九州日本電気株式会社 洗浄装置
US6265328B1 (en) 1998-01-30 2001-07-24 Silicon Genesis Corporation Wafer edge engineering method and device
JPH11297816A (ja) 1998-04-09 1999-10-29 Seiko Epson Corp 半導体装置の製造方法
US6326279B1 (en) 1999-03-26 2001-12-04 Canon Kabushiki Kaisha Process for producing semiconductor article
JP2000279852A (ja) 1999-03-29 2000-10-10 Tomotaka Marui 自生旋回流動の形状変形装置と流動方向の反転装置および流動の形状変形を用いたプロセス装置、移動体構造、トンネル構造、ならびに流動方向の反転を用いた噴流生成装置、物体吸引装置および物体操作方法と生体刺激方法
JP2001026500A (ja) 1999-07-14 2001-01-30 Canon Inc 薄膜単結晶デバイスの製造法
US6452091B1 (en) 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same
JP2001111081A (ja) 1999-07-30 2001-04-20 Canon Inc 太陽電池モジュール及び太陽電池モジュールの製造方法
US6391220B1 (en) 1999-08-18 2002-05-21 Fujitsu Limited, Inc. Methods for fabricating flexible circuit structures
AU776667B2 (en) 1999-11-29 2004-09-16 Canon Kabushiki Kaisha Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device
JP4311702B2 (ja) * 1999-12-08 2009-08-12 キヤノン株式会社 複合部材の分離方法及び薄膜の製造方法
US7060153B2 (en) 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
JP2001237215A (ja) * 2000-02-23 2001-08-31 Nec Corp 半導体装置の製造方法及びその装置
JP4884592B2 (ja) 2000-03-15 2012-02-29 株式会社半導体エネルギー研究所 発光装置の作製方法及び表示装置の作製方法
JP2001328849A (ja) 2000-05-19 2001-11-27 Tomoegawa Paper Co Ltd 粘着剤付ディスプレイ材料のリサイクル方法
JP3945130B2 (ja) 2000-06-08 2007-07-18 株式会社Ｓｕｍｃｏ 張り合わせ誘電体分離ウェーハの製造方法
SG136795A1 (en) 2000-09-14 2007-11-29 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4803884B2 (ja) 2001-01-31 2011-10-26 キヤノン株式会社 薄膜半導体装置の製造方法
KR100379533B1 (ko) 2001-05-28 2003-04-10 주식회사 하이닉스반도체 반도체소자의 게이트절연막 제조방법
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP4527068B2 (ja) * 2001-07-16 2010-08-18 株式会社半導体エネルギー研究所 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法
EP1455394B1 (en) 2001-07-24 2018-04-11 Samsung Electronics Co., Ltd. Transfer method
JP4602261B2 (ja) * 2001-08-10 2010-12-22 株式会社半導体エネルギー研究所 剥離方法および半導体装置の作製方法
TW554398B (en) 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
TW558743B (en) 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
JP3824510B2 (ja) * 2001-08-24 2006-09-20 大日本スクリーン製造株式会社 基板処理装置
TW594947B (en) 2001-10-30 2004-06-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US6953735B2 (en) 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
JP2003237263A (ja) 2002-02-18 2003-08-27 Minolta Co Ltd 再生可能な情報保持体、該情報保持体の再生方法、及び再生装置
EP1363319B1 (en) 2002-05-17 2009-01-07 Semiconductor Energy Laboratory Co., Ltd. Method of transferring an object and method of manufacturing a semiconductor device
JP2004047975A (ja) 2002-05-17 2004-02-12 Semiconductor Energy Lab Co Ltd 積層体の転写方法及び半導体装置の作製方法
JP2004047823A (ja) 2002-07-12 2004-02-12 Tokyo Seimitsu Co Ltd ダイシングテープ貼付装置およびバックグラインド・ダイシングテープ貼付システム
TWI272641B (en) 2002-07-16 2007-02-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP2004140267A (ja) 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4471563B2 (ja) 2002-10-25 2010-06-02 株式会社ルネサステクノロジ 半導体装置の製造方法
KR101079757B1 (ko) 2002-10-30 2011-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 반도체장치의 제작방법
JP2004158765A (ja) 2002-11-08 2004-06-03 Tokyo Kakoki Kk 基板処理装置
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
AU2003292609A1 (en) 2003-01-15 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Separating method and method for manufacturing display device using the separating method
US7436050B2 (en) 2003-01-22 2008-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a flexible printed circuit
TWI356658B (en) 2003-01-23 2012-01-11 Toray Industries Members for circuit board, method and device for m
JP2004310051A (ja) 2003-03-24 2004-11-04 Sony Corp 超薄型電気光学表示装置の製造方法および製造装置
JP2004311955A (ja) 2003-03-25 2004-11-04 Sony Corp 超薄型電気光学表示装置の製造方法
JP2005079395A (ja) 2003-09-01 2005-03-24 Seiko Epson Corp 積層体及びその製造方法、電気光学装置、電子機器
JP2005079553A (ja) 2003-09-03 2005-03-24 Seiko Epson Corp 転写方法、剥離方法、及び剥離装置
JP4809600B2 (ja) * 2003-10-28 2011-11-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1528594B1 (en) 2003-10-28 2019-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN100405540C (zh) 2003-11-06 2008-07-23 松下电器产业株式会社 基板贴合方法、该贴合基板及直接接合基板
JP2005148638A (ja) 2003-11-19 2005-06-09 Nitto Denko Corp 粘着型光学フィルムの剥離方法
WO2005052893A1 (en) 2003-11-28 2005-06-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
WO2005057658A1 (en) 2003-12-15 2005-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
US7271076B2 (en) 2003-12-19 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
US7015075B2 (en) * 2004-02-09 2006-03-21 Freescale Semiconuctor, Inc. Die encapsulation using a porous carrier
EP1719165A1 (en) 2004-02-25 2006-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2006049800A (ja) 2004-03-10 2006-02-16 Seiko Epson Corp 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器
US7282380B2 (en) 2004-03-25 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101226260B1 (ko) 2004-06-02 2013-01-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
JP4054359B2 (ja) 2004-07-02 2008-02-27 シャープ株式会社 フィルム剥離方法と装置
JP4749062B2 (ja) 2004-07-16 2011-08-17 株式会社半導体エネルギー研究所 薄膜集積回路を封止する装置及びｉｃチップの作製方法
US7591863B2 (en) 2004-07-16 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
CN100530575C (zh) 2004-07-30 2009-08-19 株式会社半导体能源研究所 层压系统、ic薄片、ic薄片卷、以及ic芯片的制造方法
JP4749074B2 (ja) * 2004-07-30 2011-08-17 株式会社半導体エネルギー研究所 Ｉｃチップの作製方法及び装置
JP5041686B2 (ja) 2004-07-30 2012-10-03 株式会社半導体エネルギー研究所 薄膜集積回路の剥離方法および半導体装置の作製方法
WO2006011664A1 (en) 2004-07-30 2006-02-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101150996B1 (ko) 2004-09-24 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
JP5008289B2 (ja) * 2004-09-24 2012-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法
WO2006038496A1 (ja) 2004-10-01 2006-04-13 Toray Industries, Inc. 長尺フィルム回路基板、その製造方法およびその製造装置
JP5072210B2 (ja) * 2004-10-05 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4945726B2 (ja) * 2004-11-05 2012-06-06 セイコーエプソン株式会社 薄膜装置の製造方法
JP5089037B2 (ja) 2004-12-03 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7482248B2 (en) 2004-12-03 2009-01-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP4649198B2 (ja) 2004-12-20 2011-03-09 新光電気工業株式会社 配線基板の製造方法
JP2006178185A (ja) * 2004-12-22 2006-07-06 Konica Minolta Photo Imaging Inc レンズの製造方法、映像表示装置の製造方法、レンズの製造装置及び映像表示装置の製造装置
JP4479512B2 (ja) 2005-01-18 2010-06-09 東レ株式会社 回路基板用部材および回路基板用部材の製造方法
JP5100012B2 (ja) * 2005-01-28 2012-12-19 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
CN101950748B (zh) 2005-01-28 2013-06-12 株式会社半导体能源研究所 半导体器件和制造它的方法
JP2006216891A (ja) 2005-02-07 2006-08-17 Tokyo Univ Of Agriculture & Technology 薄膜素子構造の作製方法、及び薄膜素子構造作製用の機能性基体
JP2006228776A (ja) * 2005-02-15 2006-08-31 Advantest Corp 荷電粒子ビーム露光装置及び荷電粒子ビーム露光方法
CN1283874C (zh) 2005-02-18 2006-11-08 孙占明 不剪开式圆筒针织物烧毛除皱定型机
JP5153058B2 (ja) * 2005-02-25 2013-02-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7566633B2 (en) 2005-02-25 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI413152B (zh) * 2005-03-01 2013-10-21 半導體能源研究所股份有限公司 半導體裝置製造方法
JP2006259095A (ja) 2005-03-16 2006-09-28 Mitsubishi Paper Mills Ltd 光架橋性樹脂組成物
JP4795743B2 (ja) 2005-05-19 2011-10-19 リンテック株式会社 貼付装置
WO2006123825A1 (en) 2005-05-20 2006-11-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7465674B2 (en) 2005-05-31 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
EP1760776B1 (en) 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
US7767543B2 (en) 2005-09-06 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a micro-electro-mechanical device with a folded substrate
JP2007184495A (ja) 2006-01-10 2007-07-19 Fujifilm Corp ウエーハリングの再生処理装置
JP4610515B2 (ja) * 2006-04-21 2011-01-12 株式会社半導体エネルギー研究所 剥離方法
US8048777B2 (en) 2006-09-29 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8137417B2 (en) 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003174153A (ja) * 2001-07-16 2003-06-20 Semiconductor Energy Lab Co Ltd 剥離方法および半導体装置の作製方法、および半導体装置
US20040209442A1 (en) * 2003-01-23 2004-10-21 Seiko Epson Corporation Device manufacturing method and device, electro-optic device, and electronic equipment

Also Published As

Publication number Publication date
US8048777B2 (en) 2011-11-01
JP2015109467A (ja) 2015-06-11
KR20150066499A (ko) 2015-06-16
CN101399179A (zh) 2009-04-01
TWI450387B (zh) 2014-08-21
JP5070166B2 (ja) 2012-11-07
US8043936B2 (en) 2011-10-25
KR100987918B1 (ko) 2010-10-18
JP2017017337A (ja) 2017-01-19
KR20180034362A (ko) 2018-04-04
US20150017751A1 (en) 2015-01-15
JP2018078300A (ja) 2018-05-17
CN101399179B (zh) 2012-09-05
CN105206566A (zh) 2015-12-30
TWI379409B (en) 2012-12-11
KR101021051B1 (ko) 2011-03-15
TW201419502A (zh) 2014-05-16
JP6255074B2 (ja) 2017-12-27
KR20080098344A (ko) 2008-11-07
CN105261593A (zh) 2016-01-20
JP5378097B2 (ja) 2013-12-25
TW200830542A (en) 2008-07-16
CN101399178A (zh) 2009-04-01
JP2013254989A (ja) 2013-12-19
JP5355202B2 (ja) 2013-11-27
JP2009004810A (ja) 2009-01-08
KR101154834B1 (ko) 2012-06-18
KR20160041870A (ko) 2016-04-18
KR101955913B1 (ko) 2019-03-11
CN101399177A (zh) 2009-04-01
CN105206566B (zh) 2019-07-30
JP5297871B2 (ja) 2013-09-25
KR20080098345A (ko) 2008-11-07
TW201601298A (zh) 2016-01-01
KR20140003346A (ko) 2014-01-09
US20080132033A1 (en) 2008-06-05
JP2009164649A (ja) 2009-07-23
TW200921905A (en) 2009-05-16
KR100987917B1 (ko) 2010-10-18
JP2009164650A (ja) 2009-07-23
CN101154562A (zh) 2008-04-02
JP2009278124A (ja) 2009-11-26
KR101589950B1 (ko) 2016-01-29
US20120045861A1 (en) 2012-02-23
TWI433306B (zh) 2014-04-01
CN101399177B (zh) 2012-10-10
KR101383120B1 (ko) 2014-04-09
US20090017599A1 (en) 2009-01-15
US8048770B2 (en) 2011-11-01
KR101472773B1 (ko) 2014-12-15
US20090017567A1 (en) 2009-01-15
KR20080029887A (ko) 2008-04-03
US9472429B2 (en) 2016-10-18
TWI430435B (zh) 2014-03-11
KR20170066302A (ko) 2017-06-14
TW200915546A (en) 2009-04-01
KR20080098346A (ko) 2008-11-07
TW200913236A (en) 2009-03-16
KR20140089330A (ko) 2014-07-14
TWI570900B (zh) 2017-02-11
KR20150013106A (ko) 2015-02-04
KR20100011966A (ko) 2010-02-03
KR101513008B1 (ko) 2015-04-17
JP6017594B2 (ja) 2016-11-02
US20090023251A1 (en) 2009-01-22
US9054141B2 (en) 2015-06-09

Similar Documents

Publication Publication Date Title
TWI570900B (zh) 半導體裝置的製造方法
JP4402144B2 (ja) 半導体装置の作製方法