TWI570908B - 可撓式顯示器面板與結構及形成可撓式顯示器面板之方法 - Google Patents

可撓式顯示器面板與結構及形成可撓式顯示器面板之方法 Download PDF

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TWI570908B
TWI570908B TW104114312A TW104114312A TWI570908B TW I570908 B TWI570908 B TW I570908B TW 104114312 A TW104114312 A TW 104114312A TW 104114312 A TW104114312 A TW 104114312A TW I570908 B TWI570908 B TW I570908B
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flexible display
substrate
layer
display panel
flexible
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TW104114312A
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TW201547015A (zh
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安德思 畢伯
達利爾斯 哥達
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蘋果公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
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Description

可撓式顯示器面板與結構及形成可撓式顯示器面板之方法
本發明係關於顯示系統。更特定言之，本發明之實施例係關於在一可撓式顯示基板上具有半導體微晶片及LED之可撓式顯示系統。
顯示面板在現代行動電子裝置(諸如智慧型電話、平板電腦及膝上型/筆記型電腦)中係關鍵組件。透過近年來之發展，可撓式顯示面板正成為習知剛性顯示面板之一可行替換件。可撓式顯示面板係並非由一剛性基板形成使得其可彎曲變形之顯示面板。當前，有機發光二極體(OLED)技術廣泛用於形成可撓式顯示面板。典型OLED顯示面板由一玻璃基板(其頂部上係含有薄膜電晶體及一電容器之一電路)、接著發光OLED裝置、及最後頂部上之一透明保護層建構。該薄膜電晶體電路形成於該OLED顯示基板內且在顯示器之彎曲變形期間經受壓縮力。此外，需要緊密地密封OLED，此係因為其對氧氣及水過敏。
本發明描述一種用於可撓式發光二極體(LED)顯示面板之方法及設備。在一實施例中，該方法包含：使一犧牲層形成於一載體基板上。該方法亦包含：使一可撓式顯示基板形成於該犧牲層上，其中該可撓式顯示基板包含延伸穿過該可撓式顯示基板而至該犧牲層之複數個釋放開口。此外，該方法包含：將一陣列之LED及複數個微晶片轉 印至該可撓式顯示基板上。在一實施例中，藉由旋塗一光可界定材料而形成該可撓式顯示基板。另外，在一實施例中，形成該可撓式顯示基板包含：形成至少一光可界定聚合物層及至少一金屬層。可藉由濺鍍而執行形成該至少一金屬層。
在一實施例中，該方法進一步包含：在該犧牲層中蝕刻複數個開口；及使該可撓式顯示基板形成於該犧牲層上及該等開口內以形成延伸穿過該犧牲層之複數個支柱。另外，在一實施例中，該方法進一步包含：選擇性地移除該犧牲層且使該可撓式顯示基板與該載體基板分離。可藉由選自由一蒸汽蝕刻程序及一電漿蝕刻程序組成之群組之一程序而執行選擇性地移除該犧牲層。另外，在一實施例中，該方法進一步包含：形成用於該LED陣列之各LED之一透明接觸件；使一黑色基質層形成於該可撓式顯示基板上，其中該黑色基質層包圍該LED陣列；及利用一保護材料來覆蓋該LED陣列及該複數個微晶片。可藉由選自由一狹縫塗佈程序及一層壓程序組成之群組之一程序而執行覆蓋該LED陣列。
在一實施例中，一種可撓式顯示面板包含一可撓式基板，其包含一前表面、一後表面、及該前表面上之一顯示區域。該可撓式顯示面板亦包含至少部分地從該前表面延伸穿過該該可撓式基板而至該後表面之複數個互連件，其中該可撓式基板及該複數個互連件形成一堆積結構。此外，該可撓式顯示面板包含一陣列之發光二極體(LED)及複數個微晶片，其等位於該可撓式顯示基板之該前表面上之該顯示區域中且電耦合至該複數個互連件。複數個釋放開口可從該前表面延伸穿過該可撓式基板而至該後表面。
該複數個微晶片之各微晶片可包含用於驅動一或多個LED發光之一驅動電路。在一實施例中，該複數個微晶片電耦合至該LED陣列。另外，在一實施例中，該可撓式顯示面板進一步包含至少一顯示組 件，其透過該複數個互連件而電耦合至該可撓式基板之該前表面上之該微晶片陣列，其中該該顯示組件包括選自由一感測控制器晶片、一掃描驅動器晶片、一資料驅動器晶片、一處理器晶片及一電源供應器組成之群組之一晶片。該顯示組件可位於該可撓式基板之該後表面上。此外，該顯示組件可位於該可撓式基板之該前表面上之該顯示區域外。在一實施例中，該堆積結構包含至少一聚合物層及至少一金屬層。
在一實施例中，一種結構包含：一載體基板；一可撓式基板，其位於該載體基板上，其中該可撓式基板包含至少部分地延伸於該可撓式基板之一前表面與一後表面之間之複數個電互連件；及一陣列之LED及複數個微晶片，其等位於該可撓式顯示基板之該前表面上。該結構亦包含：一犧牲釋放層，其位於該可撓式基板之該後表面與該載體基板之間之該前表面上之一顯示區域內；及複數個釋放開口，其等從該前表面延伸穿過該可撓式基板而至該後表面且暴露該犧牲釋放層。另外，在一實施例中，該可撓式基板之該後表面包含複數個支撐柱。該複數個支撐柱之各支撐柱可由該犧牲釋放層橫向地包圍。此外，該犧牲層可包含選自由氧化物及氮化物組成之群組之一材料。
101‧‧‧載體基板
102‧‧‧區段
103‧‧‧可撓式顯示面板
105‧‧‧可撓式顯示基板
106‧‧‧發光二極體(LED)
107‧‧‧透明保護層/保護頂部塗層
108‧‧‧微晶片
109‧‧‧溝渠/開口
111‧‧‧釋放開口
155‧‧‧頂部導電接觸層
201‧‧‧犧牲層
202‧‧‧支柱
203‧‧‧絕緣層/第一層
204‧‧‧底面
205‧‧‧第二絕緣層
207‧‧‧第三絕緣層
209‧‧‧絕緣層/第四層
211‧‧‧第一導電層
213‧‧‧後組件接合墊
215‧‧‧後組件接合表面
217‧‧‧第二導電層
218‧‧‧第三導電層/頂部導電層
221‧‧‧側表面/側壁
222‧‧‧裝置接合層/裝置互連層
223‧‧‧前表面/前側
225‧‧‧後表面
227‧‧‧側壁鈍化材料/側壁鈍化結構
229‧‧‧頂部接觸件
231‧‧‧黑色基質層
233‧‧‧接地電極(Vss)
301‧‧‧前組件接合墊
303‧‧‧頂面
401‧‧‧開口
403‧‧‧通孔開口
405‧‧‧第一導電層/第一金屬層
407‧‧‧開口
409‧‧‧開口
411‧‧‧接地墊
413‧‧‧發光二極體(LED)墊
415‧‧‧微晶片墊
417‧‧‧開口
419‧‧‧開口/蝕刻劑
421‧‧‧底面
423‧‧‧空隙
800‧‧‧可撓式顯示系統/顯示面板系統
803‧‧‧顯示組件
805‧‧‧焊料凸塊
901‧‧‧顯示區域
圖1A係根據本發明之一實施例之一陣列之可撓式顯示面板之一橫截面側視說明圖，其中經覆蓋之釋放開口安裝於一載體基板上。
圖1B係根據本發明之一實施例之一陣列之可撓式顯示面板之一橫截面側視說明圖，其中經暴露之釋放開口安裝於一載體基板上。
圖1C係根據本發明之一實施例之一陣列之可撓式顯示面板之一示意俯視說明圖，其中經暴露之釋放開口安裝於一載體基板上。
圖2係根據本發明之一實施例之一可撓式顯示基板之一橫截面側視說明圖，其中LED及微晶片位於該可撓式顯示基板之一前表面上且 組件接合墊位於該可撓式顯示基板之一後表面上。
圖3係根據本發明之一實施例之一可撓式顯示基板之一橫截面側視說明圖，其中LED及微晶片位於該可撓式顯示基板之一前表面上且組件接合墊位於該可撓式顯示基板之該前表面上。
圖4A至圖4P繪示根據本發明之一實施例之製造一可撓式顯示面板之一方法，該可撓式顯示面板包含一可撓式顯示基板，其具有該可撓式顯示基板之一前表面上之LED陣列及微晶片、及複數個經覆蓋之釋放開口。
圖4Q至圖4S繪示根據本發明之一實施例之製造一可撓式顯示面板之一方法，該可撓式顯示面板包含一可撓式顯示基板，其具有該可撓式顯示基板之一前表面上之LED陣列及微晶片、及複數個經暴露之釋放開口。
圖5係根據本發明之一實施例之與一載體基板分離之一可撓式顯示面板之一橫截面側視說明圖。
圖6係繪示根據本發明之一實施例之LED及微晶片之一配置的一可撓式顯示面板之一透視圖。
圖7A係根據本發明之一實施例之與一載體基板分離之後之具有後組件接合墊之一可撓式顯示面板之一橫截面側視說明圖。
圖7B係根據本發明之一實施例之一可撓式顯示系統之一橫截面側視說明圖，該可撓式顯示系統包含一可撓式顯示面板及安裝於該可撓式顯示面板之一後表面上之複數個顯示組件。
圖8A係根據本發明之一實施例之與一載體基板分離之後之具有前組件接合墊之一可撓式顯示面板之一橫截面側視說明圖。
圖8B係根據本發明之一實施例之一可撓式顯示系統之一橫截面側視說明圖，該可撓式顯示系統包含一可撓式顯示面板及安裝於該可撓式顯示面板之一前表面上之複數個顯示組件。
圖9A係根據本發明之一實施例之一可撓式顯示系統之一後表面之一示意俯視說明圖，該可撓式顯示系統包含一可撓式顯示面板及安裝於該可撓式顯示面板之一後表面上之複數個顯示組件。
圖9B係根據本發明之一實施例之一可撓式顯示系統之一前表面之一示意俯視說明圖，該可撓式顯示系統包含一可撓式顯示面板及安裝於該可撓式顯示面板之一前表面上之一顯示區域外之複數個顯示組件。
本發明之實施例描述可撓式顯示系統及其製造方法。在一實施例中，製造一可撓式顯示系統之一方法包含：使一犧牲層形成於一載體基板上。使一可撓式顯示基板形成於該犧牲層上，該可撓式顯示基板具有延伸穿過該可撓式顯示基板而至該犧牲層之複數個釋放開口。 在一實施例中，使用一光可界定聚合物來形成該可撓式顯示基板。將一陣列之發光二極體(LED)及複數個微晶片轉印至該可撓式顯示基板上以形成一可撓式顯示面板。該犧牲層經選擇性地移除使得該可撓式顯示面板藉由複數個支撐柱而附接至該載體基板。該可撓式顯示面板從該載體基板移除且與顯示組件電耦合以形成一可撓式顯示系統。
在各種實施例中，參考圖式來進行描述。然而，可在無此等特定細節之一或多者之情況下或與其他已知方法及組態組合地實踐某些實施例。在下列描述中，闡述諸多特定細節(諸如特定組態、尺寸及程序等等)以提供對本發明之一完全理解。在其他例項中，未詳細描述熟知程序及製造技術以避免不必要地使本發明不清楚。參考本說明書中之「一實施例」意謂：結合該實施例所描述之一特定特徵、結構、組態或特性包含於本發明之至少一實施例中。因此，出現於本說明書中之各種位置中之片語「在一實施例中」未必係指本發明之相同實施例。此外，可在一或多個實施例中依任何適合方式組合特定特 徵、結構、組態或特性。
本文所使用之術語「跨越」、「在...上方」、「至」、「在...之間」及「在...上」可係指一層相對於其他層之一相對位置。「跨越」另一層、「在另一層上方」、「在另一層上」、接合「至」另一層或「與另一層接觸」之一層可與該另一層直接接觸或可具有一或多個介入層。 「在若干層之間」之一層可與該等層直接接觸或可具有一或多個介入層。
本發明之實施例能夠製造可撓式顯示面板，其操作無需使可撓式顯示面板保持於一剛性結構中。在一實施例中，本文所描述之可撓式顯示面板包含一可撓式顯示基板，其在該可撓式顯示基板之一前表面上之一顯示區域內具有一陣列之LED及複數個微晶片。在一實施例中，該可撓式顯示基板係具有一個以上絕緣材料層及一個以上導電材料層之一堆積結構。該可撓式基板內之至少一導電材料層將該LED陣列電耦合至該複數個微晶片。在一實施例中，接合墊暴露於該可撓式顯示基板之一後表面上，顯示組件電連接至該等接合墊。替代地，在一實施例中，接合墊暴露於該可撓式顯示基板之該前表面上之一顯示區域外。該等接合墊電耦合至該可撓式顯示基板之該前表面上之該複數個微晶片。該可撓式基板內之該導電材料將該等接合墊電耦合至該複數個微晶片。
在一實施例中，藉由使一犧牲材料層形成於一載體基板上而製造該可撓式顯示面板。使複數個開口形成於該犧牲層中，使該可撓式顯示基板之一部分形成於該複數個開口內。該複數個開口中之該可撓式顯示基板之該部分形成延伸穿過該犧牲層之複數個支柱。在一實施例中，藉由形成至少一絕緣材料層及一導電材料層而建構該可撓式顯示基板。接著，將一陣列之LED及複數個微晶片轉印至該可撓式顯示基板之一前表面上。在一實施例中，藉由質量轉印工具使用靜電原理 來操作以拾取及轉印大LED陣列及微晶片而將該LED陣列及該複數個微晶片轉印至該可撓式顯示基板上。靜電轉印使驅動電路能夠定位於該可撓式顯示基板之該前表面上，而非嵌入於該可撓式顯示基板內。 該LED陣列及該複數個微晶片覆蓋有一透明材料以保護其免受實體、環境及/或電干擾，且同時允許從該LED陣列發射之光之視覺化。在一實施例中，藉由選擇性地移除該犧牲層且拉動該顯示基板遠離該載體基板而使含有該LED陣列及該複數個微晶片之該可撓式基板與該載體基板分離，此導致可與額外顯示組件整合以形成一顯示系統之一可撓式顯示面板。
在一實施例中，一可撓式顯示系統包含一可撓式顯示面板，其在可撓式顯示基板之一前表面上具有一陣列之LED及複數個微晶片。複數個顯示組件透過該可撓式顯示基板而電耦合至該複數個微晶片。在一實施例中，該複數個顯示組件直接定位於顯示區域後方之該可撓式顯示基板之後表面上。該複數個顯示組件可包含(但不限於)掃描驅動器、資料驅動器、感測控制器、寫入控制器、微控制器及電源供應器。替代地，在一實施例中，該複數個顯示組件定位於該可撓式顯示基板之該前表面上之一顯示區域外。在一實施例中，該可撓式顯示基板由一或多個絕緣材料層及一或多個導電材料層形成。該可撓式顯示基板之層疊結構允許該可撓式顯示面板沿各種方向彎曲至各種程度，同時維持該等顯示組件、該等微晶片及該等LED之間之電連接性。因而，當使該可撓式顯示系統沿各種方向彎曲時，使該可撓式顯示系統能夠顯示影像或感測光。
根據一些實施例，本文所描述之互動式顯示面板係由基於半導體之微LED形成之一微LED主動矩陣顯示面板。此一微LED主動矩陣顯示面板利用用於發光之基於半導體之微LED之效能、效率及可靠性。此外，歸因於微LED及微晶片之小尺寸，一微LED主動矩陣顯示 面板使一顯示面板能夠達成高解析度、高像素密度及高子像素密度。 在一些實施例中，歸因於微LED及微晶片之小尺寸而達成高解析度、高像素密度及高子像素密度。
例如，本文所使用之術語「微」(尤其是關於LED及微晶片)係指根據實施例之某些裝置或結構之描述性尺寸。術語「微」意指1微米至300微米，或更具體言之，1微米至100微米之尺度。在一些實施例中，「微」甚至可係指1微米至50微米、1微米至20微米、或1微米至10微米之尺度。然而，應瞭解，本發明之實施例未必限於此，而是實施例之某些態樣可適應於較大且可能較小之尺度。例如，具有1920×1080解析度及每英寸40個像素(40PPI)之一55英寸互動式電視面板大致具有(634微米×634微米)之一RBG像素節距及(211微米×634微米)之一子像素節距。依此方式，各子像素含有具有不超過211微米之一最大寬度之一或多個微LED。此外，當給微晶片以及微LED預留面積時，可進一步減小微LED之尺寸。例如，具有1920×1080解析度及每英寸440個像素(440PPI)之一5英寸互動式顯示面板大致具有(58微米×58微米)之一RBG像素節距及(19微米×58微米)之一子像素節距。在此一實施例中，不僅各子像素含有具有不超過19微米之一最大寬度之一或多個微LED，且為不干擾像素配置，可將各微晶片之像素節距減小至低於58微米。據此，一些實施例與用於發光之基於半導體之LED之效率組合，其中基於半導體之LED及視情況微晶片可縮放至微尺寸以實施至高解析度及高像素密度應用中。
圖1A係根據本發明之一實施例之複數個可撓式顯示面板103之一橫截面側視說明圖，其中經覆蓋之釋放開口111係安裝於一載體基板101上。所繪示之實施例描繪在移除犧牲層之後且在與載體基板101分離之前的複數個可撓式顯示面板103。如圖1A中所展示，可撓式顯示面板103具有將在下文討論形成可撓式顯示面板103的方法時更詳細描 述的多個區段102。複數個可撓式顯示面板103係位於載體基板101上。在一實施例中，載體基板101係可撓式顯示面板103可形成於其上之任何適合基板，諸如玻璃。在實施例中，載體基板101足夠剛性以承受與利用一靜電轉印頭來將LED陣列及複數個微晶片轉印至可撓式顯示面板103相關聯的作用力。在一實施例中，載體基板101係由可再用於製造新批次之可撓式顯示面板103之一材料形成。藉由一溝渠109使各可撓式顯示面板103與相鄰可撓式顯示面板分離。溝渠109使各可撓式顯示面板103實體地分離，使得可在不干擾或損壞一相鄰可撓式顯示面板之情況下，個別地移除各可撓式顯示面板103。在一實施例中，可撓式顯示面板103包含由至少一絕緣材料層及至少一導電材料層形成之一可撓式基板105。在一實施例中，絕緣材料係一聚合物。 替代地，在一實施例中，絕緣材料係一光可界定聚合物，諸如丙烯酸或SU-8光阻劑(即，環氧光阻劑)。在一特定實施例中，可撓式基板105係由至少一光可界定聚醯亞胺層及至少一金屬層形成。儘管任何絕緣材料可用於實施例中，但聚醯亞胺及金屬可為一可行組合，此係因為其易於使用且具有成本效益。一陣列之LED 106及複數個微晶片108經定位於可撓式顯示基板105上。一透明保護層107經形成於LED陣列、複數個微晶片，及可撓式顯示基板105之暴露頂面上。在一實施例中，透明保護層107係聚甲基丙烯酸甲酯(PMMA)或丙烯酸玻璃。此外，複數個釋放開口111延伸穿過可撓式顯示基板105。釋放開口111及溝渠109提供一蝕刻劑可在其內流動以移除犧牲層之通道，如下文將進一步討論。在此實施例中，釋放開口111可由透明保護層107覆蓋，使得孔無法延伸穿過可撓式顯示面板103。
圖1B係根據本發明之一實施例之一陣列之可撓式顯示面板103之一橫截面側視說明圖，其中經暴露之釋放開口111係安裝於一載體基板101上。所繪示之實施例描繪在移除犧牲層之後且在與載體基板101 分離之前之複數個可撓式顯示面板103。複數個可撓式顯示面板103係位於載體基板101上。藉由一溝渠109使各可撓式顯示面板103與相鄰可撓式顯示面板分離。溝渠109使各可撓式顯示面板103實體地分離，使得可在不干擾或損壞一相鄰可撓式顯示面板之情況下，個別地移除各可撓式顯示面板103。一陣列之LED 106及複數個微晶片108經定位於可撓式顯示基板105上。一透明保護層107(諸如PMMA)經形成於LED陣列、複數個微晶片，及可撓式顯示基板105之暴露頂面上方。 此外，複數個釋放開口111延伸穿過可撓式顯示基板105。釋放開口111提供一蝕刻劑可在其內流動以移除犧牲層之一通道，如下文將進一步討論。在此實施例中，透明保護層107未覆蓋釋放開口111。確切而言，形成穿過透明保護層107及釋放開口111之一開口。據此，複數個經暴露之釋放開口111產生一穿孔可撓式顯示面板103。
圖1C係根據本發明之一實施例之一陣列之可撓式顯示面板103之一示意俯視說明圖，其中釋放開口111係安裝於一載體基板101上。藉由垂直溝渠及水平溝渠109使各可撓式顯示面板103與另一可撓式顯示面板分離。複數個微晶片108經散佈於LED陣列106內。複數個微晶片108控制LED陣列之發射及/或感測。透明保護層107覆蓋LED陣列106及複數個微晶片108，以保護其等免受損壞或電干擾。此外，LED陣列106覆蓋有一透明保護層107以允許光從LED陣列106發射或感測。 複數個釋放開口111經定位於可撓式顯示面板103之內部區域內。在一實施例中，釋放開口111係經覆蓋之釋放開口。替代地，在一實施例中，釋放開口111係未經覆蓋之釋放開口。釋放開口111允許蝕刻劑移除經直接定位於可撓式顯示面板103下方之犧牲層。在一實施例中，釋放開口111彼此等距，使得蝕刻劑具有各釋放開口111之間之相同的行進距離量。替代地，釋放開口111可經設計以在蝕刻劑較難到達之區域中(例如在遠離溝渠109之位置處)具有一較高濃度或較大尺寸。 在一實施例中，釋放開口111能夠完全移除可撓式顯示面板103下方之犧牲材料。
圖2係根據本發明之一實施例之一可撓式顯示基板105之一橫截面側視說明圖，其中LED 106及微晶片108係位於可撓式顯示基板105之一前表面上，且後組件接合墊213係位於可撓式顯示基板105之一後表面225上。圖2中之說明圖描繪可撓式顯示面板103之一區段102且未展示整個可撓式顯示器面板103之一橫截面。在一實施例中，可撓式顯示基板105係形成於可由玻璃形成之一載體基板101上。
在一實施例中，可撓式顯示基板105係由至少一絕緣材料層及至少一導電材料層形成。在一實施例中，該絕緣材料係一聚合物。替代地，在一實施例中，該絕緣材料係一光可界定聚合物，諸如丙烯酸或SU-8光阻劑。在一特定實施例中，該絕緣材料係一光可界定聚醯亞胺且該導電材料係一金屬。如圖2中所描繪，可撓式顯示基板105由一個以上絕緣層203、205、207及209及一個以上導電層211、217及218形成。儘管圖2中所描繪之實施例繪示四個絕緣材料層及三個導電材料層，但本發明之實施例不受限於此等配置。在一實施例中，絕緣層203、205、207及209層疊有導電層211、217及218以形成一堆積結構。該堆積結構係具有形成於其內之互連結構及導線之一系列絕緣層。該等互連結構使導線彼此電耦合以形成跨越多個層之較大互連系統。在一實施例中，當使可撓式顯示面板彎曲時，絕緣層203、205、207及209之厚度在2微米至2.5微米之範圍內以提供導電層之間之結構強度及足夠電隔離。導電層211、217及218經結構化使得可撓式顯示基板105之後表面225電耦合至可撓式顯示基板105之前表面223。
在一實施例中，可撓式顯示基板105之前表面223包含具有側表面221之複數個井，其中轉印LED 106及微晶片108。儘管圖2描繪井中之LED 106及微晶片108，但實施例不受限於此等配置。例如，可 撓式顯示基板105之前表面223可不具有複數個井，而是具有LED及微晶片轉印於其上之一平坦表面。在一實施例中，微晶片108透過可撓式顯示基板105內之導電層211、217及218之至少一者而電耦合至LED。在一實施例中，微晶片108透過導電層211、217及218而電耦合至可撓式顯示基板105之後表面225。可撓式顯示基板105之後表面225包含具有用於電耦合至顯示組件之後組件接合表面215之後組件接合墊213，如下文將進一步討論。一透明頂部接觸件229定位於LED 106上以形成LED 106與一接地電極(Vss)233之間之一電連接。頂部接觸件229之透明性允許光發射至LED 106或從LED 106發射以容易地穿過頂部接觸件229。透明接觸件229可由任何適合透明及導電材料形成，諸如，在一實施例中，由氧化銦錫(ITO)形成。因而，在操作期間，可由微晶片108施加正電壓以對LED 106施加正向偏壓，LED 106之陰極電極藉由透明頂部接觸件229及金屬接地電極233而接地。應瞭解，對LED施加正向偏壓僅為一例示性操作，其他實施例不受限於該操作。例如，LED 106可經反向偏壓以感測光。
為確保至LED 106之電連接之穩定及保護，一側壁鈍化材料227定位於井之側壁221與LED 106之間。側壁鈍化材料227使LED 106穩定且防止粒子落於LED 106下方。另外，側壁鈍化材料227使LED之側壁鈍化以防止一主動層短路，且對形成於側壁鈍化材料227上之結構(例如金屬接觸件、透明丙烯酸、透明氧化物及/或透明聚合物，諸如可形成頂部接觸件229之結構)提供階梯覆蓋。在一實施例中，一黑色基質層231形成於可撓式顯示基板105之前表面223上方。黑色矩陣層231可吸收可見光之所有波長以防止光在相鄰LED之間洩放。據此，當可撓式顯示面板103顯示一影像時，黑色基質層231可減輕可撓式顯示面板103內之任何自生光干擾。
在一實施例中，一犧牲層201形成於載體基板101與可撓式顯示 基板105之間。犧牲層201可由可相對於可撓式顯示基板105及載體基板101而選擇性地蝕刻之任何適合材料形成。在一實施例中，犧牲層201由二氧化矽形成。犧牲層201充當一支撐層以用於製造可撓式顯示面板103，且充當一黏合劑以在製造期間固定可撓式顯示基板105。犧牲層201可經選擇性地移除以允許可撓式顯示面板103與載體基板101分離。在一實施例中，複數個支柱202延伸穿過犧牲層201以在移除犧牲層201之後支撐可撓式顯示面板103。支柱202係從可撓式顯示基板105之後表面225延伸之可撓式顯示基板105之一部分。支柱202之底面204黏合至載體基板101，直至使可撓式顯示面板103分離。在一實施例中，支柱202之結構影響可撓式顯示面板103與載體基板101之間之黏合強度以及使可撓式顯示面板103與載體基板101分離所需之力量。 較寬支柱202增大黏合強度及所需分離力，此係歸因於與載體基板101接觸之表面區域增大。除支柱202之尺寸之外，支柱202之數目亦影響黏合強度及分離力。支柱202之數目增加使黏合至載體基板101之表面區域增大。因而，增加支柱202使黏合強度及使可撓式顯示面板103與載體基板101分離所需之力增大。
溝渠109位於可撓式顯示面板103之端處。在一實施例中，犧牲層201從可撓式顯示基板105之下方延伸且形成橫跨溝渠109之底部之一層。替代地，在一實施例中，犧牲層201未從可撓式顯示基板105之下方延伸。溝渠109暴露犧牲層201，使得蝕刻劑可到達犧牲層201。 此外，在一實施例中，形成穿過可撓式顯示基板105之釋放開口111以暴露犧牲層201。釋放開口111形成使蝕刻劑到達犧牲層201之一通道。
圖3係根據本發明之一實施例之一可撓式顯示基板105之一橫截面側視說明圖，其中LED 106及微晶片108位於可撓式顯示基板105之一前表面223上且前組件接合墊301位於可撓式顯示基板105之前表面 223上。在一實施例中，前組件接合墊301電耦合至微晶片108以將電信號發送至微晶片108。前組件接合墊301之一頂面303經暴露以允許一顯示組件透過導電層211、217及218之至少一者而電連接至微晶片108。使前組件接合墊301位於可撓式顯示基板105之前表面223上允許顯示組件放置於可撓式顯示面板103之前表面223上之一顯示區域外。
溝渠109位於可撓式顯示面板103之端處。溝渠109暴露犧牲層201，使得蝕刻劑可到達犧牲層201。此外，在一實施例中，形成穿過可撓式顯示基板105之釋放開口111以暴露犧牲層201。釋放開口111形成使蝕刻劑到達犧牲層201之一通道。
圖4A至圖4S繪示根據本發明之實施例之製造一可撓式顯示面板103之一方法，可撓式顯示面板103包含一可撓式顯示基板105，其具有該可撓式顯示基板之一前表面223上之LED 106及微晶片108。圖4A至圖4P繪示製造一可撓式顯示面板103之一方法，其中LED 106及微晶片108位於具有經覆蓋之釋放開口111之可撓式顯示基板105之一前表面223上。圖4Q至圖4S繪示從圖4N繼續之製造一可撓式顯示面板103之一方法，其中LED 106及微晶片108位於具有經暴露之釋放開口111之可撓式顯示基板105之一前表面223上。
參考圖4A，使一犧牲層201形成於一載體基板101上。在一實施例中，載體基板101係玻璃。犧牲層201可由可相對於用於形成可撓式顯示基板105及載體基板101之絕緣材料而選擇性地蝕刻之任何材料形成。在一實施例中，犧牲層由二氧化矽形成。此外，在一實施例中，犧牲層201之厚度在從0.5微米至1.5微米之範圍內。可藉由一沈積程序(諸如(但不限於)化學氣相沈積(CVD)或物理氣相沈積(PVD))而形成犧牲層。
如圖4B中所展示，將開口401蝕刻至犧牲層201中。開口401可彼此均勻地間隔開或配置成一特定圖案。在一實施例中，開口401經圖 案化使得存在分散於可撓式顯示面板103將形成於其內之區域周圍之開口之一相等分佈。開口401之放置判定支柱202之位置，如圖4C中所展示。
在圖4C中，使可撓式顯示基板105之一第一層203形成於犧牲層201上及溝渠109內。在一實施例中，第一層203由一絕緣材料形成。 該絕緣材料可為一聚合物或一光可界定絕緣材料，諸如一光可界定聚合物。在一實施例中，該光可界定聚合物可為丙烯酸或SU-8光阻劑。 在一特定實施例中，第一層203由一光可界定聚醯亞胺形成，使得暴露於電磁輻射化學地修改聚醯亞胺之分子結構以允許溶解於一顯影劑溶液中。該光可界定絕緣材料能夠在無需形成一分離遮罩層(諸如一光阻劑)之情況下進行圖案化。因此，具有該光可界定絕緣材料可減少圖案化操作及成本。在第一層203之形成期間，第一層203填充開口401以形成複數個支柱202。支柱202本質上為絕緣材料之第一層203之一延伸部，使得支柱202及第一層203形成一整合結構。可藉由旋塗或噴塗一絕緣材料層而形成可撓式顯示基板105之第一層203。當旋塗絕緣材料時，絕緣材料填充開口401且隨後形成複數個支柱202。
如圖4D中所展示，將通孔開口403、釋放開口111及溝渠109蝕刻至可撓式顯示基板105之第一層203中。在一實施例中，溝渠109、通孔開口403及釋放開口111延伸穿過第一層203且暴露下方之犧牲層201。在一實施例中，通孔開口403係用於形成一互連通孔以電耦合第一層203上方及第一層203下方之結構之開口。在一實施例中，釋放開口111及溝渠109係用於提供使蝕刻化學物移除犧牲層201之一通道之開口。可藉由習知圖案化及顯影技術而形成通孔開口403、釋放開口111及溝渠109。在一實施例中，使圖案化電磁輻射(諸如可見光或紫外光)暴露至第一層203上。暴露於電磁輻射之第一層203之部分變為交聯的。因而，當將第一層203浸沒於一顯影劑溶液中時，未經暴露 之區域經移除以形成圖案化開口403、111及109。替代地，若第一層203並非由光可界定材料形成，則可使用另一適合圖案化技術來形成第一層203中之開口403、111、109。
如圖4E中所展示，使一第一導電層405形成於第一層203上方及通孔開口403、釋放開口111及溝渠109內。第一導電層405可由一導電材料(諸如一金屬或一金屬合金)或多個導電材料層之任何組合形成。 在一實施例中，第一導電層405係鈦-金-鈦(Ti-Au-Ti)層堆疊，其中金層夾置於兩個鈦薄層之間。第一導電層405可由Ti-Au-Ti形成之一原因係：儘管金係一極佳導體且高度抗氧化，但其無法與絕緣材料(諸如第一層203)較好地黏合。因而，添加與絕緣材料較好地黏合之外鈦層允許金層牢固地附接至第一層203。應瞭解，金之厚度可遠大於鈦之厚度。在一實施例中，金層厚度與鈦層厚度之比率在從5：1至10：1之範圍內。可藉由一等形沈積技術而執行形成第一金屬層405。在一實施例中，藉由濺鍍而形成具有多個導電材料層之第一導電層405。
如圖4F中所展示，將開口407蝕刻於第一導電層405中以形成具有後組件接合表面215之後組件接合墊213及一第一導電層211。後組件接合墊213與後組件接合墊213形成於其上之開口403及第一層203之表面等形。在一實施例中，第一導電層211係可撓式顯示基板105內之兩個半導體裝置之間之一電連接件之一部分。形成於釋放開口111及溝渠109內之導電層經移除以暴露犧牲層201以藉由透過釋放開口111及溝渠109接達而使一蝕刻劑到達犧牲層201。可藉由一遮罩及蝕刻程序(諸如一各向異性乾式或電漿蝕刻程序)而蝕刻第一導電層405中之開口407。
圖4G繪示根據本發明之一實施例之利用圖4C至圖4F中所討論之處理技術及導電材料來分別反覆形成第二絕緣層205及第三絕緣層207及分別反覆形成第二導電層217及第三導電層218之後之可撓式顯示基 板105。第三導電層218包含各種裝置接合墊，諸如一接地墊411、LED墊413及微晶片墊415。第二導電層217係經設計以形成後組件接合墊213與接地墊411、LED墊413及微晶片墊415之間之各種互連件之一互連層。導電層217及218可為由任何導電材料(諸如(但不限於)非晶矽、導電氧化物、導電聚合物、金屬及金屬合金)形成之一單一導電層或多個導電層。例如，在一實施例中，導電層217及218由鋁、鈦或鋁鈦合金形成。另外，導電層217及218可由一個以上金屬層(諸如鈦鎢合金及金層(TiW-Au)或鈦鋁(Ti-Al)層)形成。在一實施例中，後組件接合墊213分別透過第二導電層217及第三導電層218而電耦合至可撓式顯示基板105之微晶片墊415。儘管圖4G中所描繪之實施例繪示三個絕緣層及三個導電層，但實施例不限於此。頂部導電層218中之各種開口409已被蝕刻以分別形成接地墊411、LED墊413及微晶片墊415。在至此時為止之所有程序中，釋放開口111及溝渠109已被連續蝕刻以暴露犧牲層201，使得蝕刻劑可透過釋放開口111及溝渠109而接達犧牲層201。
在圖4H中，使用各種技術(諸如噴墨印刷、網版印刷、層壓、旋塗、噴塗、CVD及PVD)之任何者來使一第四層209形成於暴露墊411、413及415之一部分上及第三層207之暴露頂面上。第四層209可係由各種絕緣材料(諸如(但不限於)光可界定丙烯酸、光阻劑、二氧化矽、氮化矽、聚甲基丙烯酸甲酯(PMMA)、苯並環丁烯(BCB)、聚醯亞胺、SU-8光阻劑、丙烯酸酯、環氧樹脂及聚酯)形成。在一實施例中，第四層209係由一不透明材料(諸如一黑色基質材料)形成。例示性絕緣黑色基質材料包含：有機樹脂；玻璃膏；及樹脂或膏，其包含一黑色顏料、金屬粒子(諸如鎳、鋁、鉬及其等之合金)、金屬氧化物粒子(例如氧化鉻)或金屬氮化物粒子(例如氮化鉻)。在一實施例中，第四層209係由分別相同於第一層203、第二層205及第三層207之材料 (諸如一光可界定絕緣材料或任何其他保護可撓式材料)形成。
在一實施例中，第四層209具有開口417，其暴露電裝置可電耦合至其之接地墊411、LED墊413及微晶片墊415。如圖4H中所展示，第四層209中之開口417具有向下傾斜以形成一井或一記憶體庫結構之傾斜側壁221。在一實施例中，該井可用於相鄰LED之光學分離以防止光學干擾。另外，在一實施例中，該井之一表面可用於形成反射鏡以有助於光提取。此外，在一實施例中，該井可提供用於蓄集側壁鈍化材料227之一結構，以使LED之側壁鈍化以防止一主動層短路，且可提供一結構，用於對形成於側壁鈍化材料227上之結構(例如頂部接觸件229)提供較佳之階梯覆蓋。
如圖4I中所展示，使導電接地電極233係形成於第四層209及接地墊411上。導電接地電極233提供至接地(Vss)之電連接，以使任何裝置耦合至接地。在一實施例中，接地電極233透過接地墊411來與至少第二導電層217電耦合以形成至接地之一連接。可藉由一沈積及蝕刻技術來形成導電接地電極233。在一實施例中，藉由濺鍍及接著一各向異性蝕刻程序來形成導電接地電極233。
在圖4J中，使裝置接合層222形成於經暴露之LED墊413及微晶片墊415上，以促進電裝置之接合。在一實施例中，裝置接合層222係根據其能力而選擇，以透過接合機制(諸如共晶合金接合、暫態液相接合或固態擴散接合)來與電裝置(其將放置於墊上)上之一接合層相互擴散。在一實施例中，裝置接合層222具有250℃或更低之一熔化溫度。 例如，裝置接合層222可包含一焊接材料，諸如錫(232℃)或銦(156.7℃)或其等之合金。裝置接合層222亦可呈一支柱之形狀。根據本發明之一些實施例，較高裝置接合層222可對系統組件調平(諸如在裝置轉印操作期間之具有墊之電裝置的平面性)及裝置之高度變動提供一額外自由度，此係歸因於液化接合層隨著其在接合期間於墊上散 開而改變高度。裝置接合層222之寬度可小於電裝置之一底面之一寬度，以防止電裝置之側壁周圍之裝置接合層222的芯吸(其可引起電短路)。可藉由一光阻劑剝離技術或電鍍來形成裝置接合層222。
如圖4K中所展示，將LED 106及微晶片108轉印至裝置互連層222上，使得LED 106及微晶片108分別電耦合至LED墊413及微晶片墊415。在一實施例中，LED 106係具有1微米至20微米之一裝置尺寸之微LED。LED 106可為發射任何彩色光之LED，諸如一發射紅光、發射綠光、發射藍光、發射紅外光、發射青光、發射白光、發射黃光或發射任何其他彩色光之LED。微晶片108可含有用於從與可撓式顯示基板105無關之顯示組件接收信號之電路，且含有用於根據所接收之信號而操作LED 106之電路。在一實施例中，微晶片108含有驅動電路以在正向偏壓模式中驅動LED發光。視情況而定，微晶片108亦可含有一選擇裝置(諸如一多工器)以使LED與驅動電路斷接且連接至一感測電路以在反向偏壓模式中操作LED來感測光。儘管圖4K僅繪示兩個LED及一個微晶片108，但本發明之實施例不受限於此等組態。確切而言，可將任何數目個LED 106及任何數目個微晶片108轉印至可撓式顯示基板105上。更具體言之，LED及微晶片108之數目及尺寸可根據可撓式顯示面板103之解析度或尺寸而調整。較高數目個及較小尺寸之LED及微晶片108可形成於需要較高解析度及/或較小可撓式顯示面板103之可撓式顯示面板中。藉由一拾取及放置方法而將LED 106及微晶片108靜電轉印至裝置接合層222上。在一實施例中，一靜電轉印頭使用靜電力來拾取LED 106及微晶片108且將LED 106及微晶片108放置於裝置接合層222上。
其後，在圖4L中，LED 106及微晶片108與井(其中接合LED 106及微晶片108)之側壁221之間之間隙經填充以形成側壁鈍化結構227。在實施例中，側壁鈍化結構227蓄集於開口417中之井內之LED 106及 微晶片108周圍。側壁鈍化結構227附接至LED 106及微晶片108之側壁及開口417中之井之側壁221。另外，側壁鈍化結構227填充LED 106及微晶片108下方之間隙。根據本發明之實施例，側壁鈍化結構227對可見波長透明或半透明以不會使LED之光提取效率顯著降級。 側壁鈍化結構227可由各種材料(諸如(但不限於)環氧樹脂、聚甲基丙烯酸甲酯(PMMA)、苯並環丁烯(BCB)、聚醯亞胺及聚酯)形成。可藉由一精確沈積技術(諸如(但不限於)噴墨印刷)而形成側壁鈍化結構227。
側壁鈍化結構227可將LED 106及微晶片108固定於適當位置中以防止與裝置接合層222之電斷接。與裝置接合層222之電斷接可使LED及微晶片108無法操作。另外，側壁鈍化結構227可對形成於側壁鈍化結構227之頂部上之結構(例如頂部接觸件229)提供用於較佳階梯覆蓋之一表面。此外，側壁鈍化結構227可使LED 106之暴露側壁絕緣以防止主動層之短路。
如圖4M中所展示，使頂部接觸件229形成於LED 106上方以將LED 106電耦合至金屬接地電極233。根據特定應用，頂部接觸件229可對可見波長光譜不透明、反射、透明或半透明。例示性透明導電材料包含非晶矽、透明導電氧化物(TCO)(諸如氧化銦錫(ITO)及氧化銦鋅(IZO))、奈米碳管膜或一透明導電聚合物(諸如聚(3,4-乙烯二氧噻吩)(PEDOT)、聚苯胺、聚乙炔、聚吡咯及聚噻吩)。在一實施例中，頂部導電接觸層155包含奈米粒子，諸如銀、金、鋁、鉬、鈦、鎢、ITO及IZO。在一實施例中，頂部接觸件229之厚度係約50奈米至約1微米。形成方法包含CVD、PVD、噴塗或旋塗，其取決於待塗佈之所要區域及任何熱約束。在一些實施例中，藉由噴墨印刷或網版印刷而形成頂部接觸件229。在一實施例中，噴墨印刷或網版印刷提供一實際方法來圖案化個別頂部接觸件229且無需分離遮罩層。
在圖4N中，使具有開口419之一黑色基質層231形成於可撓式顯示基板105之暴露前表面223上以包圍LED 106。例示性黑色基質材料包含碳、金屬膜(例如鎳、鋁、鉬及其等之合金)、金屬氧化物膜(例如氧化鉻)、金屬氮化物膜(例如氮化鉻)、有機樹脂、玻璃膏、及樹脂或膏(其包含一黑色顏料或銀粒子)。黑色基質層231防止光在LED之間洩放及/或防止光由相鄰LED吸收。因此，黑色基質層231之存在改良顯示於可撓式顯示面板103上之影像之對比度。在一實施例中，釋放開口111及溝渠109中之黑色基質層231之部分經移除以維持釋放開口111及溝渠109。黑色基質層231可由適當地基於所使用之材料之一方法形成。例如，可使用噴墨印刷、濺鍍及蝕刻、剝離旋塗、層壓或一印刷方法來施加黑色基質層231。
如圖4O中所展示，藉由利用一蝕刻劑419來相對於可撓式顯示基板105及載體基板101選擇性地蝕刻犧牲層201而移除可撓式顯示基板105與載體基板101之間之犧牲層201。蝕刻劑419透過釋放開口111及溝渠109而到達犧牲層201。由可穿過可撓式顯示基板105與載體基板101之間之小尺寸之一蝕刻劑移除犧牲層201，諸如一蒸汽或電漿蝕刻程序。在一實施例中，藉由利用汽化HF作為蝕刻劑之一蒸汽蝕刻程序而移除犧牲層201。蝕刻劑相對於可撓式顯示基板105及載體基板101而選擇犧牲層201，使得犧牲層201實質上被蝕除，而可撓式顯示基板105及載體基板101實質上未被蝕除。在一實施例中，在移除犧牲層201之後保留可撓式顯示基板105及載體基板101。在移除犧牲層201之後，可撓式顯示面板103藉由複數個支柱202而支撐於載體基板101上。複數個支柱202由先前由犧牲層201佔據之空隙423橫向包圍。在一實施例中，藉由選擇性蝕刻程序而同時移除由Ti-Au-Ti形成之用於後組件接合墊213之第一金屬層405之薄Ti層。據此，金層經暴露以與電耦合至其之任何顯示組件電接觸。金層係一極佳導體且高度抗氧 化。
如圖4P中所展示，將一保護頂部塗層107沈積於顯示面板103上方，其包含將保護頂部塗層107沈積於釋放開口111內。可藉由層壓、狹縫塗佈、噴墨印刷或任何沈積及蝕刻技術而形成保護頂部塗層107。若藉由一不精確沈積技術而沈積保護頂部塗層107，則形成於溝渠109內之保護頂部塗層107可經移除以維持用於使相鄰可撓式顯示面板103分離之溝渠109。保護頂部塗層107可為任何適合之透明、可撓式及保護材料以密封形成顯示面板103之裝置及結構。透明性允許光穿過保護頂部塗層107而至LED 106及從LED 106穿過保護頂部塗層107。此外，可撓性允許可撓式顯示面板103在各種位置中彎曲及撓曲且不使保護頂部塗層107破裂。另外，保護頂部塗層107之保護性質使可撓式顯示面板103之裝置及結構與環境隔離且保護其免受實體侵入及/或電干擾。在一實施例中，保護頂部塗層107由各種材料(諸如(但不限於)環氧樹脂、聚酯丙烯酸(聚丙烯酸酯)(諸如苯並環丁烯(BCB))、聚醯亞胺及聚酯)形成。在一特定實施例中，保護頂部塗層107由聚甲基丙烯酸甲酯(PMMA)形成。儘管PMMA之厚層具剛性及非撓性，但保護頂部塗層107之厚度實質上較薄以允許具可撓性。在一實施例中，保護頂部塗層之厚度在15微米至20微米之範圍內。在一實施例中，保護頂部塗層107部分地填充釋放開口111或完全填充釋放開口111，使得保護頂部塗層107之一底面421到達可撓式顯示基板105之後表面225。一旦形成保護頂部塗層107，則此時準備使可撓式顯示面板103與載體基板101分離。
圖4Q繪示根據本發明之實施例之製造可撓式顯示面板103之一替代方法。圖4Q從圖4N繼續，在圖4N中，形成黑色基質層231且犧牲層201仍完好無損。在形成黑色基質層231之後，在圖4Q中，可將保護頂部塗層107沈積於可撓式顯示面板103上方。可直接形成於釋放開口 111及溝渠109上方或釋放開口111及溝渠109內之保護頂部塗層107之部分經移除以暴露犧牲層201，使得犧牲層201可由一化學蝕刻劑接達。其後，在圖4R中，可藉由利用一選擇性蝕刻劑419來選擇性地蝕刻犧牲釋放層201而移除犧牲釋放層201。可如上文參考圖4O所討論般執行選擇性地移除犧牲層201。如圖4S中所展示，此時準備使可撓式顯示面板103與載體基板101分離。可撓式顯示面板103利用複數個支柱202來支撐於載體基板101上，其中各支柱202由先前填充有犧牲層201之空隙423橫向包圍。釋放開口111在可撓式顯示面板103內保持暴露。
圖5係根據本發明之一實施例之與一載體基板101分離之一可撓式顯示面板103之一示意橫截面側視說明圖。在一實施例中，藉由提升可撓式顯示面板103之一側且剝離可撓式顯示面板103而使可撓式顯示面板103分離，如圖5中所展示。支柱202可不在使可撓式顯示面板103與載體基板101分離時斷裂或切斷，且可在分離之後保持完好無損。替代地，在一實施例中，從載體基板101真空抽離或靜電轉走可撓式顯示面板103。無需苛性化學蝕刻劑來移除可撓式顯示面板103，此係因為複數個支柱202與載體基板101之間之黏合力足夠低以允許實體乾燥分離。然而，使用濕化學溶液來使可撓式顯示面板103與載體基板101分離係本發明之實施例中設想之一可行分離方法。
圖6係繪示根據本發明之一實施例之LED及微晶片之一配置的一可撓式顯示面板103之一透視圖。圖6中之可撓式顯示基板105係透明的以更佳地繪示可撓式顯示面板103之佈局，且不意欲具限制性。 LED 106之陣列及複數個微晶片108位於可撓式顯示面板103之一前表面223上。導電層211及218經形成以使LED 106之陣列及複數個微晶片108彼此電耦合。可如圖6中所展示般水平及垂直地配置導電層211及218，但實施例不受限於使複數個微晶片108與LED 106之陣列互連 之此等配置。另外，用於LED 106之陣列中之各LED 106之頂部接觸件229係透明的以允許將光透射至LED 106及從LED 106透射光。
圖7A係根據本發明之一實施例之與一載體基板101分離之後之一可撓式顯示面板103之一橫截面側視說明圖，其中後組件接合墊213位於可撓式顯示面板103之後表面225上。可撓式顯示面板103已與載體基板101分離且準備整合至一可撓式顯示系統中。可撓式顯示面板103包含一前表面223，其具有一陣列之LED 106及複數個微晶片108。此外，可撓式顯示面板103包含一後表面225，其包含經暴露之後組件接合墊213及複數個支柱202。LED 106之陣列電耦合至複數個微晶片108，使得複數個微晶片108可控制LED 106之操作。在一實施例中，定位於可撓式顯示面板103之後表面225上之後組件接合墊213電耦合至複數個微晶片108，使得微晶片108能夠從後組件接合墊213接收操作信號。據此，後組件接合墊213透過可撓式顯示基板105中之導電層211、217及218而電耦合至複數個微晶片108。因此，後表面225與前表面223電耦合。
圖7B係根據本發明之一實施例之一可撓式顯示系統800之一橫截面側視說明圖，可撓式顯示系統800包含一可撓式顯示面板103及安裝於可撓式顯示面板103之一後表面225上之複數個顯示組件803。可撓式顯示面板103包含經覆蓋之釋放開口111，使得孔無法延伸穿過可撓式顯示面板103。釋放開口111從可撓式顯示基板105之前表面223延伸至後表面225。在一替代實施例中，釋放開口111經敞開以形成穿過可撓式顯示面板103之孔。複數個顯示組件803電耦合至後組件接合墊213。在一實施例中，顯示組件803透過焊料凸塊805而電耦合至後組件接合墊213，使得信號可從顯示組件803發送至微晶片108。導電層211、217及218形成顯示組件803與微晶片108之間及微晶片108與LED 106之間之所需互連。在一實施例中，在上文圖4O中所討論之釋放蝕 刻程序之後，由金形成後組件接合墊213之後組件接合表面215。在一實施例中，導電層211、217及218從可撓式顯示基板105之前表面223延伸至後表面225。顯示組件803可為具有用於操作可撓式顯示面板103之電路或程式指令之任何微晶片或微控制器。例如，在一實施例中，顯示組件803係一掃描驅動器晶片、一感測控制器晶片、一資料驅動器晶片、一處理器晶片或一電源供應器。在一實施例中，電源供應器係一電池。
圖8A係根據本發明之一實施例之與一載體基板101分離之後之一可撓式顯示面板103之一橫截面側視說明圖，其中前組件接合墊301位於可撓式顯示面板103之前表面223上。可撓式顯示面板103已與載體基板101分離且準備整合至一可撓式顯示系統中。可撓式顯示基板103包含一前表面223，前表面223上具有一陣列之LED 106、複數個微晶片108及複數個前組件接合墊301。LED 106之陣列電耦合至複數個微晶片108，使得複數個微晶片108可控制LED 106之操作。前組件接合墊301透過可撓式顯示基板105中之導電層211、217及218之至少一者而電耦合至複數個微晶片108。
圖8B係根據本發明之一實施例之一可撓式顯示系統800之一橫截面側視說明圖，可撓式顯示系統800包含一可撓式顯示面板103及安裝於可撓式顯示面板103之一前表面223上之複數個顯示組件803。可撓式顯示面板103包含經覆蓋之釋放開口111，使得孔無法延伸穿過可撓式顯示面板103。釋放開口111從可撓式顯示基板105之前表面223延伸至後表面225。在一替代實施例中，釋放開口111經敞開以形成穿過可撓式顯示面板103之孔。複數個顯示組件803電耦合至前組件接合墊301。據此，在一實施例中，顯示組件803透過焊料凸塊805而電耦合至微晶片108，使得信號可從顯示組件803發送至微晶片108。導電層211、217及218形成顯示組件803與微晶片108之間及微晶片108與LED 106之間之所需互連。導電層211、217及218至少部分地延伸穿過可撓式顯示基板105。如圖8B中所展示，導電層211、217及218延伸穿過可撓式顯示基板105之一半以上。導電層211、217及218未必完全延伸穿過可撓式顯示基板105，此係因為不存在後組件接合墊213，但本發明之實施例中設想完全延伸穿過可撓式顯示基板105之實施例。顯示組件803可為具有用於操作可撓式顯示面板103之電路或程式指令之任何微晶片或微控制器。例如，在一實施例中，顯示組件803係一掃描驅動器晶片、一感測控制器晶片、一資料驅動器晶片、一處理器晶片或一電源供應器。在一實施例中，電源供應器係一電池。
圖9A係根據本發明之一實施例之一可撓式顯示系統800之一後表面225之一示意俯視說明圖，可撓式顯示系統800包含一可撓式顯示面板103及安裝於可撓式顯示面板103之一後表面225上之複數個顯示組件803。上文所討論之圖7B中繪示圖9A中所展示之顯示系統800之側視說明圖。如圖9A中所展示，以灰色虛線繪示LED 106之陣列及複數個微晶片108以指示：此等裝置定位於可撓式顯示面板103之前表面223上。其中定位LED 106及微晶片108之可撓式顯示面板103之區域形成一顯示區域901。顯示區域901由形成於LED 106及微晶片108之周邊周圍之灰色虛線勾畫。顯示區域901係其中可撓式顯示系統800發射及感測光之區域。複數個顯示組件803可沿任何適合定向接合至可撓式顯示面板103之後表面225。如圖9A中所展示，使顯示組件803沿水平定向及垂直定向來定向。此外，顯示組件803與後組件接合墊213(圖中未展示，此係因為其由顯示組件803覆蓋)電耦合。應瞭解，將顯示組件803放置於顯示面板103之後側上允許一顯示面板系統800之建構具有比使顯示組件803安裝於可撓式顯示面板103之一前表面223上之一顯示面板系統800(如圖9B中所展示)之表面區域佔用面積小之一表面區域佔用面積。儘管圖9A描繪安裝於顯示區域901之相對側上 之可撓式顯示面板103之後表面225上之顯示組件803，但顯示組件可安裝於可撓式顯示面板103之後表面225上之顯示區域901外。
圖9B係根據本發明之一實施例之一可撓式顯示系統800之一前側223之一示意俯視說明圖，可撓式顯示系統800包含一可撓式顯示面板103及安裝於可撓式顯示面板103之一前表面223上之一顯示區域901外之複數個顯示組件803。上文所討論之圖8B中繪示圖9B中所展示之顯示系統800之示意側視說明圖。將顯示組件803安裝於可撓式顯示面板103之一前表面223上之一顯著差異係可撓式顯示系統800之表面區域佔用面積增大。不可將顯示組件803放置於可撓式顯示面板103之前表面223上，此係因此其將阻止LED 106發光。然而，將顯示組件放置於可撓式顯示基板103之前表面223上之顯示區域901外可允許可撓式顯示系統800具有一較薄輪廓。應瞭解，可沿任何定向(而非僅沿圖9B中所繪示之水平定向及垂直定向)配置顯示組件803。
在利用本發明之各種態樣時，熟習技術者將明白，上述實施例之組合或變動可用於使一可撓式顯示面板發光。儘管已使用針對結構特徵及/或方法動作之特定語言來描述本發明，但應瞭解，在隨附申請專利範圍中所界定之本發明未必受限於所描述之特定特徵或動作。相反地，所揭示之特定特徵及動作應理解為用於繪示本發明之所主張發明之尤佳實施方案。
101‧‧‧載體基板
102‧‧‧區段
103‧‧‧可撓式顯示面板
105‧‧‧可撓式顯示基板
106‧‧‧發光二極體(LED)
107‧‧‧透明保護層/保護頂部塗層
108‧‧‧微晶片
109‧‧‧溝渠/開口
111‧‧‧釋放開口

Claims (16)

  1. 一種用於形成一可撓式顯示面板之方法，其包括：使一犧牲層形成於一載體基板上；於該犧牲層中蝕刻複數個開口；及使一可撓式顯示基板形成於該犧牲層上及該等開口內以形成延伸穿過該犧牲層之複數個支柱，該可撓式顯示基板包括延伸穿過該可撓式顯示基板而至該犧牲層之複數個釋放開口；及將一發光二極體(LED)陣列及複數個微晶片轉印至該可撓式顯示基板上。
  2. 如請求項1之方法，其中形成該可撓式顯示基板包括：旋塗一光可界定材料。
  3. 如請求項1之方法，其中形成該可撓式顯示基板包括：形成至少一光可界定聚合物及至少一金屬層。
  4. 如請求項3之方法，其中形成該至少一金屬層包括濺鍍。
  5. 如請求項1之方法，進一步包括：選擇性地移除該犧牲層；及使該可撓式顯示基板與該載體基板分離。
  6. 如請求項5之方法，其中藉由選自由一蒸汽蝕刻程序及一電漿蝕刻程序組成之群組之一程序來執行選擇性地移除該犧牲層。
  7. 如請求項1之方法，進一步包括：形成用於該LED陣列中之各LED之一透明接觸件；使一黑色基質層形成於該可撓式顯示基板上，該黑色基質層包圍該LED陣列；及使該LED陣列及該複數個微晶片覆蓋有一保護材料。
  8. 如請求項7之方法，其中藉由選自由一狹縫塗佈程序及一層壓程 序組成之群組之一程序來執行覆蓋該LED陣列。
  9. 一種可撓式顯示面板，其包括：一可撓式基板，其包括一前表面、一後表面及一顯示區域；複數個互連件，其等至少部分地從該前表面延伸穿過該可撓式基板而至該後表面，其中該可撓式基板及該複數個互連件形成一堆積結構；一發光二極體(LED)陣列及複數個微晶片，其等係在該可撓式基板之該前表面上之該顯示區域中，且經電耦合至該複數個互連件；複數個釋放開口，其等從該前表面延伸穿過該可撓式基板而至該後表面；及複數個支撐柱，其位於該可撓式基板之該後表面上。
  10. 如請求項9之可撓式顯示面板，其中該複數個微晶片經電耦合至該LED陣列。
  11. 如請求項9之可撓式顯示面板，進一步包括：至少一顯示組件，其係透過該複數個互連件而電耦合至該可撓式基板之該前表面上之該微晶片陣列，其中該顯示組件包括選自由一感測控制器晶片、一掃描驅動器晶片、一資料驅動器晶片、一處理器晶片及一電源供應器組成之群組之一晶片。
  12. 如請求項11之可撓式顯示面板，其中該顯示組件係在該可撓式基板之該後表面上。
  13. 如請求項11之可撓式顯示面板，其中該顯示組件係在該可撓式基板之該前表面上之該顯示區域外。
  14. 如請求項9之可撓式顯示面板，其中該堆積結構包括至少一聚合物層及至少一金屬層。
  15. 一種一可撓式顯示面板之結構，其包括： 一載體基板；一可撓式基板，其係在該載體基板上，該可撓式基板包括至少部分地延伸於該可撓式基板之一前表面與一後表面之間之複數個電互連件，且該可撓式基板之該後表面包括複數個支撐柱；一LED陣列及複數個微晶片，其等係在該可撓式基板之該前表面上；一犧牲釋放層，其係在該可撓式基板之該後表面與該載體基板之間，其中該複數個支撐柱之各支撐柱係由該犧牲釋放層橫向包圍；及複數個釋放開口，其等從該前表面延伸穿過該可撓式基板而至該後表面且暴露該犧牲釋放層。
  16. 如請求項15之結構，其中該犧牲層包括選自由一個氧化物及一個氮化物組成之群組之一材料。
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