TWI513799B - 用於回收具有低ｋ介電材料之半導體晶圓的組成物及方法 - Google Patents

用於回收具有低ｋ介電材料之半導體晶圓的組成物及方法 Download PDF

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TWI513799B
TWI513799B TW095141472A TW95141472A TWI513799B TW I513799 B TWI513799 B TW I513799B TW 095141472 A TW095141472 A TW 095141472A TW 95141472 A TW95141472 A TW 95141472A TW I513799 B TWI513799 B TW I513799B
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Taiwan
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composition
ether
acid
weight
glycol
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TW095141472A
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English (en)
Chinese (zh)
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TW200722506A (en
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維辛丁 帕梅拉
蔣平
科爾珊斯基 麥克
金 麥克肯齊
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安堤格里斯公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/40—Cleaning for reclaiming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/16—Preparing bulk and homogeneous wafers by reclaiming or re-processing

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
TW095141472A 2005-11-09 2006-11-09 用於回收具有低ｋ介電材料之半導體晶圓的組成物及方法 TWI513799B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US73522505P 2005-11-09 2005-11-09
US76096906P 2006-01-20 2006-01-20
US80582606P 2006-06-26 2006-06-26
US82163106P 2006-08-07 2006-08-07

Publications (2)

Publication Number Publication Date
TW200722506A TW200722506A (en) 2007-06-16
TWI513799B true TWI513799B (zh) 2015-12-21

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TW095141472A TWI513799B (zh) 2005-11-09 2006-11-09 用於回收具有低ｋ介電材料之半導體晶圓的組成物及方法

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US (2) US7960328B2 (cg-RX-API-DMAC10.html)
EP (1) EP1946358A4 (cg-RX-API-DMAC10.html)
JP (1) JP2009515055A (cg-RX-API-DMAC10.html)
KR (1) KR20080072905A (cg-RX-API-DMAC10.html)
CN (1) CN101356629B (cg-RX-API-DMAC10.html)
AU (1) AU2006340825A1 (cg-RX-API-DMAC10.html)
TW (1) TWI513799B (cg-RX-API-DMAC10.html)
WO (1) WO2007111694A2 (cg-RX-API-DMAC10.html)

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