CN101356629B - 用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法 - Google Patents

用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法 Download PDF

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Publication number
CN101356629B
CN101356629B CN2006800507306A CN200680050730A CN101356629B CN 101356629 B CN101356629 B CN 101356629B CN 2006800507306 A CN2006800507306 A CN 2006800507306A CN 200680050730 A CN200680050730 A CN 200680050730A CN 101356629 B CN101356629 B CN 101356629B
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acid
composition
ether
removal composition
microelectronic component
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CN101356629A (zh
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帕梅拉·M·维辛廷
江平
迈克尔·B·克赞斯基
麦肯齐·金
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Entegris Inc
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Advanced Technology Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/40—Cleaning for reclaiming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/16—Preparing bulk and homogeneous wafers by reclaiming or re-processing

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
CN2006800507306A 2005-11-09 2006-11-09 用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法 Active CN101356629B (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US73522505P 2005-11-09 2005-11-09
US60/735,225 2005-11-09
US76096906P 2006-01-20 2006-01-20
US60/760,969 2006-01-20
US80582606P 2006-06-26 2006-06-26
US60/805,826 2006-06-26
US82163106P 2006-08-07 2006-08-07
US60/821,631 2006-08-07
PCT/US2006/060696 WO2007111694A2 (en) 2005-11-09 2006-11-09 Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon

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CN101356629A CN101356629A (zh) 2009-01-28
CN101356629B true CN101356629B (zh) 2012-06-06

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US (2) US7960328B2 (cg-RX-API-DMAC10.html)
EP (1) EP1946358A4 (cg-RX-API-DMAC10.html)
JP (1) JP2009515055A (cg-RX-API-DMAC10.html)
KR (1) KR20080072905A (cg-RX-API-DMAC10.html)
CN (1) CN101356629B (cg-RX-API-DMAC10.html)
AU (1) AU2006340825A1 (cg-RX-API-DMAC10.html)
TW (1) TWI513799B (cg-RX-API-DMAC10.html)
WO (1) WO2007111694A2 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107431014A (zh) * 2015-04-13 2017-12-01 三菱瓦斯化学株式会社 用于使晶圆再生的含有含碳硅氧化物的材料的清洗液及清洗方法

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