TWI497678B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

Info

Publication number
TWI497678B
TWI497678B TW101118058A TW101118058A TWI497678B TW I497678 B TWI497678 B TW I497678B TW 101118058 A TW101118058 A TW 101118058A TW 101118058 A TW101118058 A TW 101118058A TW I497678 B TWI497678 B TW I497678B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
alignment mark
semiconductor
magnetic material
height
Prior art date
Application number
TW101118058A
Other languages
English (en)
Chinese (zh)
Other versions
TW201250975A (en
Inventor
脇山悟
南正樹
Original Assignee
新力股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新力股份有限公司 filed Critical 新力股份有限公司
Publication of TW201250975A publication Critical patent/TW201250975A/zh
Application granted granted Critical
Publication of TWI497678B publication Critical patent/TWI497678B/zh

Links

Classifications

    • H10W90/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H10P72/0614—
    • H10P72/50—
    • H10P95/90—
    • H10W20/01—
    • H10W20/40—
    • H10W46/00—
    • H10W74/00—
    • H10W74/016—
    • H10W46/101—
    • H10W46/301—
    • H10W46/601—
    • H10W72/01235—
    • H10W72/01255—
    • H10W72/01257—
    • H10W72/01271—
    • H10W72/01333—
    • H10W72/01336—
    • H10W72/019—
    • H10W72/072—
    • H10W72/07223—
    • H10W72/07227—
    • H10W72/07234—
    • H10W72/07236—
    • H10W72/073—
    • H10W72/07338—
    • H10W72/20—
    • H10W72/222—
    • H10W72/241—
    • H10W72/242—
    • H10W72/248—
    • H10W72/252—
    • H10W72/285—
    • H10W72/29—
    • H10W72/90—
    • H10W72/941—
    • H10W72/9415—
    • H10W72/952—
    • H10W74/15—
    • H10W80/312—
    • H10W80/327—
    • H10W80/701—
    • H10W90/26—
    • H10W90/722—
    • H10W90/792—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW101118058A 2011-06-09 2012-05-21 半導體裝置及其製造方法 TWI497678B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011129192A JP2012256737A (ja) 2011-06-09 2011-06-09 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW201250975A TW201250975A (en) 2012-12-16
TWI497678B true TWI497678B (zh) 2015-08-21

Family

ID=47292471

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101118058A TWI497678B (zh) 2011-06-09 2012-05-21 半導體裝置及其製造方法

Country Status (5)

Country Link
US (1) US9548290B2 (enExample)
JP (1) JP2012256737A (enExample)
KR (2) KR20120137238A (enExample)
CN (1) CN102820284B (enExample)
TW (1) TWI497678B (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9978656B2 (en) * 2011-11-22 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming fine-pitch copper bump structures
US20130199831A1 (en) * 2012-02-06 2013-08-08 Christopher Morris Electromagnetic field assisted self-assembly with formation of electrical contacts
US9343419B2 (en) * 2012-12-14 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structures for semiconductor package
CN103872000A (zh) * 2012-12-14 2014-06-18 台湾积体电路制造股份有限公司 用于半导体封装件的凸块结构
US9773724B2 (en) * 2013-01-29 2017-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and semiconductor device packages
CN105143987B (zh) 2013-03-12 2017-10-20 麦克罗尼克迈达塔有限责任公司 机械制造的对准基准方法和对准系统
WO2014140047A2 (en) 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
JP2014216377A (ja) * 2013-04-23 2014-11-17 イビデン株式会社 電子部品とその製造方法及び多層プリント配線板の製造方法
JP6234074B2 (ja) * 2013-06-07 2017-11-22 オリンパス株式会社 半導体装置、固体撮像装置、および撮像装置
US9142475B2 (en) 2013-08-13 2015-09-22 Intel Corporation Magnetic contacts
KR102160786B1 (ko) * 2013-10-29 2020-09-28 삼성전자주식회사 반도체 패키지
US9263405B2 (en) * 2013-12-05 2016-02-16 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device
EP2889900B1 (en) 2013-12-19 2019-11-06 IMEC vzw Method for aligning micro-electronic components using an alignment liquid and electrostatic alignment as well as corresponding assembly of aligned micro-electronic components
WO2015157124A1 (en) 2014-04-07 2015-10-15 Flir Systems, Inc. Method and systems for coupling semiconductor substrates
EP3022765A4 (en) 2014-09-26 2017-04-26 Intel Corporation Flexible packaging architecture
JP6470320B2 (ja) * 2015-02-04 2019-02-13 オリンパス株式会社 半導体装置
US10446522B2 (en) * 2015-04-16 2019-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming multiple conductive features in semiconductor devices in a same formation process
US10068181B1 (en) * 2015-04-27 2018-09-04 Rigetti & Co, Inc. Microwave integrated quantum circuits with cap wafer and methods for making the same
CN104778904B (zh) * 2015-05-08 2017-11-24 合肥京东方光电科技有限公司 一种显示面板母板及其制备方法
KR20160142943A (ko) * 2015-06-03 2016-12-14 한국전자통신연구원 반도체 패키지 및 반도체 패키지의 제조 방법
US9633882B2 (en) * 2015-09-29 2017-04-25 Globalfoundries Singapore Pte. Ltd. Integrated circuits with alignment marks and methods of producing the same
US10636757B2 (en) * 2017-08-29 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit component package and method of fabricating the same
US11417569B2 (en) * 2017-09-18 2022-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure having integrated circuit component with conductive terminals of different dimensions
US10217718B1 (en) * 2017-10-13 2019-02-26 Denselight Semiconductors Pte. Ltd. Method for wafer-level semiconductor die attachment
US10276539B1 (en) * 2017-10-30 2019-04-30 Micron Technology, Inc. Method for 3D ink jet TCB interconnect control
DE102018103431A1 (de) * 2018-02-15 2019-08-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Verbindung zwischen Bauteilen und Bauelement aus Bauteilen
US11251096B2 (en) 2018-09-05 2022-02-15 Micron Technology, Inc. Wafer registration and overlay measurement systems and related methods
US11009798B2 (en) 2018-09-05 2021-05-18 Micron Technology, Inc. Wafer alignment markers, systems, and related methods
EP3637963B1 (en) * 2018-10-12 2024-02-07 AT&S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier structures connected by cooperating magnet structures
CN111524873B (zh) 2019-02-01 2022-05-13 台达电子企业管理（上海）有限公司 嵌入式封装模块及其封装方法
US11600590B2 (en) * 2019-03-22 2023-03-07 Advanced Semiconductor Engineering, Inc. Semiconductor device and semiconductor package
FR3105877A1 (fr) * 2019-12-30 2021-07-02 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de connexion autoalignée d’une structure à un support, dispositif obtenu à partir d’un tel procédé, et les structure et support mis en œuvre par un tel procédé
JP2021129084A (ja) * 2020-02-17 2021-09-02 キオクシア株式会社 半導体装置およびその製造方法
JP2021150626A (ja) * 2020-03-24 2021-09-27 キオクシア株式会社 メモリデバイス及びメモリデバイスの製造方法
DE112021001878T5 (de) * 2020-03-26 2023-01-12 Rohm Co., Ltd. Halbleiterbauteil
US11721637B2 (en) * 2020-05-27 2023-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning a transparent wafer to form an alignment mark in the transparent wafer
KR102877021B1 (ko) * 2020-09-03 2025-10-24 삼성전자주식회사 반도체 패키지
KR102856411B1 (ko) * 2020-09-15 2025-09-05 에스케이하이닉스 주식회사 이미지 센싱 장치
US11855028B2 (en) * 2021-01-21 2023-12-26 Taiwan Semiconductor Manufacturing Hybrid micro-bump integration with redistribution layer
CN113013124B (zh) * 2021-02-24 2025-09-09 日月光半导体制造股份有限公司 半导体封装装置及其制造方法
CN113594119B (zh) * 2021-06-25 2024-05-14 苏州汉天下电子有限公司 半导体封装及其制造方法
US12381158B2 (en) * 2022-03-18 2025-08-05 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer bonding method and bonded device structure
US20230299041A1 (en) * 2022-03-18 2023-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer Bonding Method and Bonded Device Structure
CN119563226A (zh) * 2023-06-02 2025-03-04 东北微科技株式会社 微小元件、整列系统及安装方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050199995A1 (en) * 2004-03-15 2005-09-15 Kentaro Nomoto Semiconductor element and wafer level chip size package therefor
TW200733842A (en) * 2005-12-16 2007-09-01 Ibiden Co Ltd Multilayer printed wiring board and method for producing the same
TW201131691A (en) * 2009-12-02 2011-09-16 Veeco Instr Inc Method for improving performance of a substrate carrier

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06112270A (ja) * 1992-09-30 1994-04-22 Kyocera Corp 半導体素子の実装方法
JP2699938B2 (ja) * 1995-06-30 1998-01-19 日本電気株式会社 プリント板ユニット
JPH10112477A (ja) * 1996-10-04 1998-04-28 Fuji Xerox Co Ltd 半導体装置の製造方法及び半導体装置
EP0951064A4 (en) * 1996-12-24 2005-02-23 Nitto Denko Corp PREPARATION OF A SEMICONDUCTOR DEVICE
CN1194595C (zh) * 2001-12-28 2005-03-23 全懋精密科技股份有限公司 一种高密度多层电路板的结构及其制作方法
US6750133B2 (en) * 2002-10-24 2004-06-15 Intel Corporation Selective ball-limiting metallurgy etching processes for fabrication of electroplated tin bumps
JP2005268623A (ja) * 2004-03-19 2005-09-29 Yamaha Corp 半導体素子及び回路基板並びにそれらを用いた実装構造
JP2005260128A (ja) * 2004-03-15 2005-09-22 Yamaha Corp 半導体素子及びそれを備えたウエハレベル・チップサイズ・パッケージ
KR100713579B1 (ko) * 2004-05-31 2007-05-02 강준모 반도체소자 얼라인 방법 및 그에 의해 형성된 반도체 구조물
FR2873675B1 (fr) 2004-07-28 2006-09-22 Commissariat Energie Atomique Dispositif microtechnologique comportant des structures assemblees magnetiquement et procede d' assemblage
JP2006054275A (ja) * 2004-08-11 2006-02-23 Sony Corp 半導体装置の製造方法および半導体製造装置
JP5151053B2 (ja) * 2006-03-30 2013-02-27 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2009188720A (ja) * 2008-02-06 2009-08-20 Panasonic Corp 固体撮像装置およびその製造方法
JP5568969B2 (ja) * 2009-11-30 2014-08-13 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050199995A1 (en) * 2004-03-15 2005-09-15 Kentaro Nomoto Semiconductor element and wafer level chip size package therefor
TW200733842A (en) * 2005-12-16 2007-09-01 Ibiden Co Ltd Multilayer printed wiring board and method for producing the same
TW201131691A (en) * 2009-12-02 2011-09-16 Veeco Instr Inc Method for improving performance of a substrate carrier

Also Published As

Publication number Publication date
US20120313236A1 (en) 2012-12-13
JP2012256737A (ja) 2012-12-27
US9548290B2 (en) 2017-01-17
TW201250975A (en) 2012-12-16
KR102071823B1 (ko) 2020-01-30
CN102820284B (zh) 2017-07-14
KR20120137238A (ko) 2012-12-20
KR20190054039A (ko) 2019-05-21
CN102820284A (zh) 2012-12-12

Similar Documents

Publication Publication Date Title
TWI497678B (zh) 半導體裝置及其製造方法
CN102543902B (zh) 半导体器件及其制造方法
US7919410B2 (en) Packaging methods for imager devices
US8012776B2 (en) Methods of manufacturing imaging device packages
TWI253149B (en) Semiconductor device, module for optical devices, and manufacturing method of semiconductor device
TWI408790B (zh) 具有貫穿電極之半導體裝置及其製造方法
CA2536799C (en) Semiconductor package and method of manufacturing the same
TWI378516B (en) Bump-on-lead flip chip interconnection
TW200524101A (en) Electronic device and process for manufacturing same
JP2007516602A (ja) 流動可能な伝導媒体を含むキャップ付きチップの製造構造および方法
JP2018056234A (ja) プリント回路板、電子機器及びプリント回路板の製造方法
JP2011071239A (ja) 半導体装置の製造方法
KR20100109376A (ko) 반도체 장치의 제조 방법 및 반도체 장치
KR100713579B1 (ko) 반도체소자 얼라인 방법 및 그에 의해 형성된 반도체 구조물
US20220157865A1 (en) Semiconductor apparatus, imaging apparatus, and method of producing a semiconductor apparatus
TW201733076A (zh) 半導體裝置及其製造方法
EP2963686B1 (en) Semiconductor photodetection device
KR100673354B1 (ko) 반도체 촬상소자 패키지 및 그 제조방법
CN108598046B (zh) 芯片的封装结构及其封装方法
KR20140020507A (ko) 반도체 칩 적층을 위한 정렬 인식 장치 및 이의 형성 방법
TWI222190B (en) Process for fabricating bumps and patterned thermal plastic layer
CN102832144B (zh) 金属凸块的形成

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees