CN102820284A - 半导体器件和半导体器件的制造方法 - Google Patents

半导体器件和半导体器件的制造方法 Download PDF

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CN102820284A
CN102820284A CN2012101771695A CN201210177169A CN102820284A CN 102820284 A CN102820284 A CN 102820284A CN 2012101771695 A CN2012101771695 A CN 2012101771695A CN 201210177169 A CN201210177169 A CN 201210177169A CN 102820284 A CN102820284 A CN 102820284A
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semiconductor device
alignment mark
magnetic material
semiconductor
semiconductor element
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CN102820284B (zh
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胁山悟
南正树
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Sony Corp
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Sony Corp
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Abstract

本发明提供了一种半导体器件和半导体器件的制造方法，所述半导体器件包括：半导体元件、形成在所述半导体元件上的连接电极以及形成在所述半导体元件上的对准标记。至少一个所述对准标记是由磁性材料制成的。本发明提高了设置有半导体器件时的定位精确度，并且改善了半导体器件的电极连接的可靠性。

Description

半导体器件和半导体器件的制造方法
相关申请的交叉引用
本申请包含与2011年6月9日向日本专利局提交的日本优先权专利申请JP 2011-129192所公开的内容相关的主题，因此将该日本优先权申请的全部内容以引用的方式并入本文。
技术领域
本发明涉及一种包括可用于在连接过程中进行定位的对准标记的半导体器件以及该半导体器件的制造方法。
背景技术
在相关技术中，将在半导体器件上的布线层中形成的对准标记用于连接半导体器件，例如用于使用焊接凸块的倒装芯片安装中和半导体基板间的连接中。在使用相机等的方案中，对准标记用于光学定位以与半导体器件连接。
有人公开了这样的技术：在半导体元件和将要安装半导体元件的电路基板上形成有由磁性材料制成而不电连接的凸块电极，从而利用磁性材料的吸引磁力实现自对准(例如，见日本未审查专利申请公报第2005-268623号和第2006-41534号)。还有人公开了这样的技术：在用于半导体元件和布线基板间电连接的凸块中设置磁性材料，从而在把半导体元件安装到电路基板上时利用磁性材料的磁力实现自对准(例如，见日本未审查专利申请公报第10-112477号)。
发明内容
为了半导体器件的连接，期望改善电极间连接的可靠性。具体地，由于半导体元件与电路基板之间的间隔以及电极之间间距随着半导体元件的小型化而变小，因而期望改善连接过程中的定位精确度。
当使用光学相机进行定位时，包括光学相机的装置识别半导体元件上的对准标记从而进行定位。因此，定位精确度很大程度上取决于光学相机的精确度。
根据日本未审查专利申请公报第2005-268623号和第2006-41534号的半导体元件安装技术没有描述使用凸块电极等进行半导体元件与电路基板之间的连接的具体方法或者使凸块电极磁化的方法。因此，上述技术不能改善半导体元件与电路基板之间的定位精确度以提高电极间连接的可靠性。
在根据日本未审查专利申请公报第10-112477号的技术中，在凸块电极或伪凸块中使用了磁性材料。然后，在设置半导体元件之后，对磁性材料进行磁化从而进行精确定位。在该技术中，当最初设置半导体元件时，凸块电极不能相对于彼此精确定位。因此，如果当最初设置半导体元件时引起了显著定位偏差，则不能使用磁力进行自对准来提高凸块电极间的定位精确度。
如上所述，根据日本未审查专利申请公报第2005-268623号、第2006-41534号和第10-112477号的技术，难以在半导体元件的电极连接过程中提高定位精确度，并且难以改善连接可靠性。
因此，本发明的目的是期望提供一种提高定位精确度从而改善连接可靠性的半导体器件以及该半导体器件的制造方法。
本发明的一个实施例提供了一种半导体器件，其包括：半导体元件；连接电极，所述连接电极形成于所述半导体元件上；以及对准标记，所述对准标记形成于所述半导体元件上，其中，至少一个所述对准标记是由磁性材料制成的。
本发明另一实施例提供了一种半导体器件，其包括：半导体基板；布线层，所述布线层形成于所述半导体基板上；连接电极，所述连接电极形成于所述布线层的表面上；以及对准标记，所述对准标记与所述连接电极形成于同一层，其中，至少一个所述对准标记是由磁性材料制成的。
本发明又一实施例提供了一种半导体器件的制造方法，其包括如下步骤：准备上面形成有半导体元件的基板；在所述基板上形成对准标记；以及在所述基板上形成连接电极，其中，至少一个形成于所述半导体元件上的所述对准标记是由磁性材料制成的。
根据上述半导体器件和半导体器件的制造方法，半导体元件的至少一个对准标记是由磁性材料制成的。通过由以磁性材料制成的对准标记提供磁力，在半导体元件的连接电极的连接过程中，在不采用光学定位的情况下，可通过磁性材料的磁力而使对准标记相互精确地定位。这提高了设置有半导体器件时的定位精确度，并且改善了半导体器件的电极连接的可靠性。
附图说明
图1是示出了第一实施例的半导体器件结构的横截面图；
图2是示出了其上面形成有凸块电极的第一实施例的半导体器件的表面结构的平面图；
图3示出了第一实施例的半导体器件通过凸块电极相互连接的状态；
图4A~图4E图示了第一实施例的半导体器件的制造方法；
图5F~图5I图示了第一实施例的半导体器件的制造方法；
图6J~图6M图示了第一实施例的半导体器件的制造方法；
图7N~图7P图示了第一实施例的半导体器件的连接方法；
图8是示出了第二实施例的半导体器件结构的横截面图；
图9是示出了上面形成有对准标记的第二实施例的半导体器件表面结构的平面图；
图10A~图10D图示了第二实施例的半导体器件的制造方法；
图11E~图11I图示了第二实施例的半导体器件的制造方法；以及
图12示出了电子装置的结构。
具体实施方式
下面说明本发明的实施例。然而，本发明不限于这些实施例。
将按照下面的顺序进行说明。
1.第一实施例的半导体器件
2.第一实施例的半导体器件的制造方法
3.第二实施例的半导体器件
4.第二实施例的半导体器件的制造方法
5.实施例的电子装置
1.第一实施例的半导体器件
下面将说明第一实施例的半导体器件。
图1是示出了第一实施例的半导体器件的结构的横截面图。图1中横截面图所示的半导体器件10包括凸块电极19和对准标记15，所述凸块电极19形成于半导体元件11上的焊盘电极12上。图2是示出了上面形成有凸块电极19的第一实施例的半导体器件的表面的结构的平面图。
如图1所示，半导体器件10包括半导体元件11上的焊盘电极12。在半导体元件11的除焊盘电极12上的开口之外的整个上方，形成有钝化层13。
凸块电极19形成在焊盘电极12上，以用作与外部器件连接用的电极。凸块电极19包括形成在焊盘电极12上的阻挡层14、形成在阻挡层14上的凸块下金属(under bump metal，UBM)16、以及形成在UBM16上的凸块17。如图2所示，凸块电极19在半导体元件11的主表面上形成为阵列形式。
焊盘电极12例如是由铝制成的，并且通过半导体元件11与基板(未示出)上的电子电路连接。钝化层13形成在焊盘电极12的表面的周边部上。阻挡层14和UBM16形成在焊盘电极12的表面的中央部上。
半导体器件10还包括形成在钝化层13上的对准标记15。底部填充树脂18形成在整个半导体元件11上方从而覆盖凸块电极19、对准标记15和钝化层13。
如图2所示，在半导体器件10中，凸块电极19形成在半导体元件11的中央侧。相对于凸块电极19，对准标记15形成在外周边侧。对准标记15分别设置在半导体元件11的四个角处。
阻挡层14形成为覆盖焊盘电极12的中央部。阻挡层14形成于在焊盘电极12的表面周边部上形成的一部分钝化层13上并且形成于UBM16的下方。
在各对准标记15的底部与钝化层13之间形成有另外的阻挡层14，它们与形成在焊盘电极12上的阻挡层14一样。
阻挡层14例如是由Ti或Cu形成的。
UBM16隔着上述阻挡层14而形成在焊盘电极12的中央部上。凸块17形成在UBM16上。以此方式，在焊盘电极12上形成了由阻挡层14、UBM16和凸块17形成的凸块电极19。
UBM16形成为具有某一厚度或者更大厚度，从而防止由用于形成凸块17的焊料造成腐蚀。UBM16例如是由Ni、Ti、TiW、W或Cu形成的。通常，为了防止形成在UBM16上的诸如SnAg等焊料合金蔓延到由AlCu或Cu等制成的焊盘电极12上，将UBM16形成为比阻挡层14和焊盘电极12厚。
凸块17在UBM16上形成为从焊盘电极12向上突出的半球形状。凸块17例如是由诸如SnAg等焊料合金形成的。可以不在UBM16上形成作为凸块17的焊料合金，并且可对UBM16使用Ni、Au等进行抗氧化处理。
对准标记15形成为半导体元件11上的预定位置处的图形。例如，如图2所示，多个对准标记15形成于设有凸块电极19的区域周围的区域中并且靠近半导体元件11的角部的位置处。通常，为一个半导体元件11形成有两个以上对准标记15，以使半导体器件10相对于另一个半导体器件或安装基板等定位。
如图1所示，对准标记15形成为柱状。柱状对准标记15距半导体元件11的表面的高度等于或者小于形成在焊盘电极12上的凸块电极19的高度。对准标记15可具有即便在形成底部填充树脂18之后仍可以容易地识别出对准标记15并且在安装半导体器件10时不会产生问题的任意高度。例如，对准标记15的高度可与底部填充树脂18的高度相同。对准标记15的高度优选等于或者小于底部填充树脂18的高度。
形成在半导体元件11上的多个对准标记15中的至少一个是由磁性材料制成的。形成在半导体元件11上的对准标记15是由在磁化时变为铁磁体的顺磁性材料制成的。例如，可以使用包含有铁(Fe)、钴(Co)和镍(Ni)中的至少一种的材料作为形成对准标记15的磁性材料。也可以使用含有两种以上上述材料的合金。
对准标记15应当仅在安装半导体器件10时进行定位的时候被磁化，而在其他时候不必被磁化。在安装之后可对形成对准标记15的磁性材料进行消磁。例如，可以使用永磁体或电磁体对磁性材料进行磁化。可以使用脉冲激光烧蚀方法(PLD)。例如，可通过将磁性材料加热至居里温度以上而对磁性材料进行消磁。
对准标记15的数量不限于图2中所示的四个，并且可以是两个以上。在此情况下，至少一个对准标记15可由磁性材料形成。尤其优选的是，两个以上对准标记15由磁性材料形成。更加优选的是，全部对准标记15由磁性材料形成。
由磁性材料制成的对准标记以及由非磁性材料制成的对准标记可以结合使用。在此情况下，由非磁性材料形成的对准标记15优选地由诸如Ti、TiW、W或Cu等与UBM16的材料相同的材料形成。这种对准标记15也可以由与UBM16的材料不同的材料形成。由非磁性材料形成的对准标记可形成为具有与由磁性材料制成的对准标记的高度相同的高度。
形成有对准标记15的位置不限于图2中所示的半导体元件11的角部附近的四个位置，例如可考虑半导体元件11的形状而使对准标记15形成在需要的位置处。
在使用光学相机进行定位的情况下，必须相对于形成有凸块电极的位置而在半导体元件的角部侧形成对准标记。这是因为在定位过程中必须在半导体元件11与安装面之间插设光学相机以便确定对准标记的各自位置。在对准标记15由磁性材料形成从而利用磁性材料的磁力进行定位的情况下，不需要插设光学相机。因此，与上述由非磁性材料制成的对准标记相比，就对准标记的形成位置而言，由磁性材料制成的对准标记15提供了大的自由度。例如，对准标记15甚至可以形成在半导体器件10与安装面之间无法插设光学相机的位置处。
当将半导体器件10安装至另一半导体器件或安装基板等时，在对由磁性材料制成的对准标记15进行磁化之后，利用回流熔炉中熔化的底部填充树脂18而使用对准标记15的磁力来定位半导体器件10。以此方式，在回流过程中借助对准标记15的磁力进行自对准。
底部填充树脂18形成为具有这样的厚度：在安装半导体器件10时，凸块17的连接部与半导体器件10的安装面被底部填充树脂18覆盖。例如，底部填充树脂18自半导体元件11的表面的厚度优选地等于或者大于安装之后半导体器件10的安装面与安装有半导体器件10的半导体器件或安装基板的安装面之间的距离。通过使半导体器件10与安装基板等之间的空间填充有底部填充树脂18，能够确保安装可靠性。
例如，优选将使用酚醛树脂、胺或酸酐固化剂的热固树脂用作底部填充树脂18。考虑回流过程中的自对准性，底部填充树脂18优选地具有0.01Pa·s~10Pa·s的最小熔融粘度。如果树脂的熔融粘度太低，底部填充树脂18可能具有明显高的流动性，从而流出半导体器件10的安装面。相比之下，如果树脂的熔融粘度太高，则树脂可能具有低的流动性从而在回流时阻碍由对准标记15的磁力造成的自对准。
底部填充树脂18优选地包含具有助焊剂活性的金属。在回流时具有助焊剂活性的底部填充树脂18首先被熔化，从而减少了凸块17表面上的氧化膜。然后，上部凸块和下部凸块借助于由磁性材料制成的对准标记15的吸引力而相互接触，从而形成金属连接。
虽然在半导体器件10中，将对准标记15形成在钝化层13上，但对准标记15也可形成在与焊盘电极12相同的表面上。在此情况下，对准标记15可由与焊盘电极12的材料相同的材料形成。
图3示出了使上述半导体器件10通过凸块电极19相互连接的状态。
在图3所示的结构中，将具有相同结构的半导体器件10设置为使其形成有凸块电极19的表面相互面对。上部半导体器件10A和下部半导体器件10B通过它们各自的凸块电极19而相互连接。通过形成为使其表面延伸的凸块17而使凸块电极19彼此形成为一体，从而使上部半导体器件10A和下部半导体器件10B电连接。
底部填充树脂18使部半导体器件10A和下部半导体器件10B彼此机械连接，从而由凸块电极19形成的连接部形成于底部填充树脂18中。以此方式，底部填充树脂18填充上部半导体器件10A与下部半导体器件10B之间的空间从而形成嵌条(fillet)。
上部半导体器件10A和下部半导体器件10B设置成使它们各自的形成于半导体元件11上的对准标记15相对于彼此定位。
通过提供具有由磁性材料制成的对准标记15的连接面并对该磁性材料进行磁化，对准标记15可利用磁性材料的吸引磁力而相对于彼此精确地定位。因此，能够在不使用光学相机等的情况下精确地定位上部半导体器件10A和下部半导体器件10B。
具体地，在两个以上对准标记15由磁性材料形成的情况下，仅利用磁力就可实现高的定位精确度。
如上所述，由磁性材料制成的对准标记形成在例如使用凸块电极进行倒装芯片连接的上部半导体器件10A和下部半导体器件10B的各个半导体元件11上。因此，当在利用磁力定位上部半导体元件和下部半导体元件之后的回流处理中熔化该凸块时，通过磁性材料的吸引力使半导体元件11移动至正确位置。这能够通过自对准进行高精确度定位。
另外，在图3所示的结构中，对分别形成于上部半导体元件和下部半导体元件中的磁性材料施加相反的磁场，并且在上部半导体元件11和下部半导体元件11的至少一者上预先形成含有助焊剂活性成分的底部填充树脂18。由于在半导体器件10的表面上预先形成了具有助焊剂活性的底部填充树脂18，故在回流处理过程中进行自对准，所述自对准过程中，同时进行凸块连接和基于磁性材料的吸引力的定位。具体地，使用20μm以下的微凸块能够以减小的节拍时间以及提高的连接精确度来进行定位，而由于光学相机精确度的限制，以光学方式不能提高该定位精确度。
通过使用具有助焊剂活性的底部填充树脂以及在回流温度下0.01Pa·s~10Pa·s的最小熔融粘度，降低了回流过程中树脂的阻抗，并且使基于磁化磁性材料的吸引力的定位变得容易。
此外，在半导体器件10相互连接之后可对由磁性材料制成的对准标记进行消磁，使其不再具有磁力。这防止了在连接之后由于磁力引起半导体器件10的错误操作等。
下面，将说明半导体器件10中对准标记15的高度。
如图3所示，调整形成在上部半导体元件和下部半导体元件11上的对准标记15的高度B，使得各自的磁性材料或永磁体相互接触的上部半导体元件与下部半导体元件11之间的距离A能够使各凸块17相互接触，从而保证电连接。
就对准标记15的高度B而言，例如，柱状对准标记15自半导体元件11表面的高度可以等于或者小于形成在焊盘电极12上的凸块电极19的高度，并且等于或者大于形成有凸块17的表面的高度。在图3所示的结构中，凸块17形成在UBM16上。因此，对准标记15的高度可以等于或者大于UBM16的高度并且等于或者小于凸块17的高度。在例如在UBM16上没有形成作为凸块17的焊料合金等的结构中，对准标记15的高度可以等于或者大于焊盘电极12的高度并且等于或者小于UBM16的高度。具体地，对准标记15的高度优选地与UBM16的高度相同。
对准标记15可具有在安装半导体器件10时不会导致问题的任意高度。例如，对准标记15的高度优选地等于或者小于底部填充树脂18的高度。
上部半导体元件上的对准标记15可形成为具有与下部半导体元件上的对准标记15不相同的高度，并且例如一个半导体元件上的对准标记15可以更短。上部半导体器件10A上的对准标记15的高度和下部半导体器件10B上的对准标记15的高度不受具体限制，只要在半导体元件相互连接的情况下上部半导体器件10A上的对准标记15的高度和下部半导体器件10B上的对准标记15的高度的总和能够保证上述距离A即可。
在上述实施例中，具有相同结构的半导体器件10相互连接。然而，半导体器件10可以连接至不同于半导体器件10的物体。半导体器件10可连接至具有不同结构的半导体器件或电路基板等，但上述的半导体器件或电路基板等包括由磁性材料制成的与半导体器件10的对准标记相同的对准标记。对于由磁性材料制成并且在位置上相互对应的一对对准标记而言，如果这对对准标记中的一个对准标记具有磁力，那么另一个则不必被磁化。
2.第一实施例的半导体器件的制造方法
下面，将说明第一实施例的半导体器件的制造方法。在下面对制造方法的说明中，对于与上述第一实施例半导体器件的部件相同的部件，用与图1~图3中所使用的附图标记相同的附图标记来表示，由此省略这些部件的详细说明。在下面将要说明的横截面图中，仅示出了形成于半导体基板上的多个半导体元件之一。
首先，如图4A所示，准备半导体基板，在所述半导体基板中，在半导体元件11上形成有焊盘电极12和钝化层13。然后，对位于基板上的半导体元件11的表面进行反向溅射，以除去焊盘电极12表面上的氧化膜等。
接下来，如图4B所示，利用溅射方法覆盖焊盘电极12和钝化层13，从而在整个半导体元件11上方形成阻挡层14。例如，利用溅射方法在焊盘电极12和钝化层13上形成Ti层，然后再利用溅射方法形成覆盖Ti层的Cu层，从而形成阻挡层14。
接下来，如图4C所示，在阻挡层14上形成光致抗蚀剂层21。例如，通过利用旋转涂敷方法，涂敷感光性抗蚀剂材料以覆盖基板的整个表面，然后烘干该涂敷膜，从而形成光致抗蚀剂层21。光致抗蚀剂层21形成为厚度大于待形成在半导体元件11上的对准标记15的高度。
接下来，如图4D所示，利用光掩模22对光致抗蚀剂层21进行曝光处理。使用能够让待形成对准标记的区域被曝光光照射的图形作为光掩模22。然后，如图4E所示，对光致抗蚀剂层21进行显影处理从而除去光致抗蚀剂层21的被曝光部分，于是在光致抗蚀剂层21中形成开口部23。开口部23形成于与待形成对准标记的位置相对应的位置处。
接下来，如图5F所示，利用电解电镀方法在光致抗蚀剂层21的开口部23中形成对准标记15。使用磁性材料在半导体元件11上形成至少一个对准标记15。结果，在半导体元件11和阻挡层14上形成了对准标记15。
在对准标记15是由磁性材料形成的情况下，对准标记15形成为含有Ni、Fe和Co中的至少一种的电镀层。
在将由磁性材料制成的对准标记15和由非磁性材料制成的对准标记15结合使用的情况下，由非磁性材料制成的对准标记15例如形成为Ti、TiW、W或Cu等电镀层。
对准标记15的高度等于或者小于待形成在焊盘电极12上的凸块电极19的高度，并且等于或者大于待形成有凸块17的表面的高度。在UBM16上没有形成作为凸块17的焊料合金等的情况下，对准标记15的高度与UBM16的高度相同。
接下来，如图5G所示，除去半导体元件11上的光致抗蚀剂层21。然后，如图5H所示，在阻挡层14上形成光致抗蚀剂层24。例如，利用旋转涂敷方法涂敷材料以覆盖基板的表面，然后烘干该涂敷膜，从而形成光致抗蚀剂层24。
接下来，如图5I所示，利用光掩模25对光致抗蚀剂层24进行曝光处理。使用能够让焊盘电极12的各中央部被曝光光照射的图形作为光掩模22。然后，在曝光之后，对光致抗蚀剂层21进行显影处理，从而除去光致抗蚀剂层21的被曝光部分，于是在光致抗蚀剂层21中形成开口部26。
然后，如图6J所示，利用电解电镀方法在开口部26中形成UBM16。此外，如图6K所示，利用电解电镀方法在开口部26中的UBM16上形成焊料层17A。UBM16例如形成作为Ni、Ti、TiW、W或Cu的电解电镀层。焊料层17A形成作为诸如SnAg等焊料合金的电解电镀层。
接下来，除去光致抗蚀剂层24，随后通过溅射蚀刻除去从半导体元件11表面露出的阻挡层14。然后，如图6L所示，通过回流而使焊料层17A熔化从而形成凸块17。在除去阻挡层14的过程中，UBM16和焊料层17A用作基板整个表面的掩模，从而保留UBM16下方的阻挡层14。对准标记15也用作蚀刻掩模，从而也保留对准标记15下方的阻挡层14。通过回流使焊料层17A形成为半球状凸块17，在焊盘电极12上形成了由UBM16和凸块17形成的凸块电极19。
在此状态下，在对准标记是由顺磁性材料形成的情况下磁化对准标记。
例如，永磁体或电磁体用来磁化对准标记15。作为替代，使用脉冲激光烧蚀方法(PLD)。作为这样处理的结果，将磁场施加至磁性材料。所施加的磁场具有垂直于半导体元件11表面方向的磁通量。对准标记15磁化为使得半导体器件10的对准标记15的磁极性与待安装有半导体器件10的装置的对准标记的磁极性相反。
接下来，如图6M所示，在半导体元件11侧的基板表面上形成底部填充树脂18。例如，利用旋转涂敷方法涂敷含有底部填充树脂的液体或层叠底部填充树脂的干膜，从而形成底部填充树脂18。然后，从基板中切掉半导体元件11，并将半导体元件11分割成单片，由此制造出半导体器件10。
以上述方式，利用光刻和电解电镀，在形成有半导体元件11的基板表面上，形成了对准标记15、UBM16和焊接凸块17。对准标记15形成为其上表面的高度等于或者小于凸块电极19自形成有半导体元件11的表面的高度。当用底部填充树脂18涂敷形成有凸块电极19的半导体元件11的表面时，对准标记15同时也被涂敷。这时，底部填充树脂18形成为其厚度等于或者大于对准标记15的高度。
在上述制造方法中，在从基板中切掉半导体元件11并将半导体元件11分割成单片之前，对用于形成对准标记15的磁性材料进行磁化处理。然而，对于磁性材料的磁化处理可在形成之后的任何时间进行。例如，可在半导体元件11被分割成单片之后，进行对于磁性材料的磁化处理。
在上述实施例的制造方法中，在UBM16和焊料层17A的形成工序之前制造对准标记15。然而，UBM16和焊料层17A的形成工序以及对准标记15的形成工序的顺序不受具体限制。在阻挡层14的形成工序之后且在阻挡层14的蚀刻工序之前，可以以任何顺序进行对准标记15的形成工序以及UBM16和焊料层17A的形成工序。
接下来，将说明通过上述制造方法形成的半导体器件10的连接方法。在下面的说明中，将在具有相同结构的两个半导体器件10的连接作为半导体器件10的连接示例进行说明，这两个半导体器件10各自的表面上形成有相互面对的凸块电极19。
首先，如图7N所示，上部半导体器件10A和下部半导体器件10B相对于彼此定位。在不进行光学定位的情况下，利用具有不同极性且设置在对准标记15中的磁性材料进行这种定位。即使在半导体器件以相对低的定位精确度相互接触的情况下，也能够基于吸引磁力将上部半导体器件10A和下部半导体器件10B定位。
接下来，如图7O所示，在上部半导体器件10A和下部半导体器件10B相对于彼此进行定位的同时，在回流熔炉中对上部半导体器件10A和下部半导体器件10B进行加热。在回流过程中，加热至凸块17的熔点或者更高从而将连接用凸块17熔化。例如，在凸块17是由Sn-3.5Ag制成的情况下，加热至221℃的熔点或者更高。在此情况下，含有助焊剂活性成分的底部填充树脂18在凸块17之前熔化，从而在回流过程中凸块17的表面上的氧化膜减少。然后，通过由磁性材料制成的对准标记15的吸引磁力，使上部凸块和下部凸块17相互接触，从而形成金属连接。
此外，将底部填充树脂18加热至固化。底部填充树脂18使上部半导体器件10A和下部半导体器件10B相互结合，由此提高半导体元件各结合面之间的机械连接的可靠性。在用于上述凸块17的连接的回流的同时，可进行用于底部填充树脂18的固化的加热。
当如上所述地通过回流而熔化凸块17并且使底部填充树脂18成为流体时，上部半导体器件10A和下部半导体器件10B变为可自由移动。因此，通过对准标记15的吸引磁力可以对上部半导体器件10A和下部半导体器件10B的各个位置进行细微调整和修正。以此方式，利用由磁性材料制成的对准标记15，除了在回流之前进行的初始定位之外，还在回流过程中进行基于磁力的自对准，以使上部半导体器件10A和下部半导体器件10B相互接触。
通过上述处理，利用基于形成对准标记15的磁性材料的磁力进行的定位，可以使半导体器件10相互连接。
在上部半导体器件10A和下部半导体器件10B相互接触之后，可以使由磁性材料制成的对准标记15消磁。通过将对准标记15加热至用作磁性材料的材料的居里温度以上而使对准标记15消磁。通过使对准标记15消磁，能够防止由于磁力所致的半导体器件的错误操作。
3.第二实施例的半导体器件
下面，将说明第二实施例的半导体器件。
除了使用上述第一实施例所述的凸块进行半导体元件之间的倒装芯片连接之外，本发明实施例的基于由磁性材料制成的对准标记的定位还可适用于在金属电极之间采用三维连接的半导体基板之间的连接。
作为通过金属电极连接的半导体器件的示例，图8示出了其中第一半导体器件31和第二半导体器件32通过金属电极45连接的半导体器件30。
图8中所示的半导体器件30包括第一半导体器件31和第二半导体器件32，第一半导体器件31包括布置有多个像素的像素区域，第二半导体器件32包括进行信号处理的逻辑电路。第一半导体器件31和第二半导体器件32通过金属电极45彼此电连接，从而形成单个固体摄像器件。
第一半导体器件31包括第一半导体基板50。第一半导体基板50包括：光电转换部41，其设置在像素区域中且包括作为用于各像素的光电转换部的光电二极管(PD)；各像素晶体管的源极/漏极区域；以及栅极电极，其形成在第一半导体基板50上。在第一半导体基板50的与连接至第二半导体器件32的第一半导体器件31的表面相对的表面上，形成有平坦化膜44。在光电转换部41上依次堆叠有滤色器42和片上微透镜43。
在第一半导体基板50的第一半导体器件31与第二半导体器件32连接那一侧的表面上，形成有布线层33。布线层33包括多个绝缘层35、由形成在各绝缘层35中的导电层37形成的布线、以及穿过各层而电连接导电层37的连接导体36。
在布线层33的表面40(与第一半导体基板50相对的表面)上形成有用于连接的金属电极45。对准标记46形成在金属电极45周围。
第二半导体器件32包括第二半导体基板55。在第二半导体基板55上形成有包括用于信号处理的信号处理电路的逻辑电路。在第二半导体基板55的第二半导体器件32与第一半导体器件31连接那一侧的表面上，设置有形成逻辑电路的多个MOS晶体管。每个MOS晶体管包括由元件隔离区域隔开的一对源极/漏极区域39以及隔着栅极绝缘膜形成的栅极电极38。
在第二半导体基板55上形成有布线层34。布线层34包括多个绝缘层35、由形成在各绝缘层35中的导电层37形成的布线、以及穿过各个层而电连接导电层37的连接导体36。
在布线层34的最前表面40(与第二半导体基板55相对的表面)上形成有用于连接的金属电极45。对准标记46形成在金属电极45周围。形成在第二半导体器件32中的金属电极45和对准标记46形成在与上述第一半导体器件31的用于连接的金属电极45和对准标记46相对应的位置处。
如图9所示，在靠近第一半导体器件31和第二半导体器件32(下文中称作“半导体器件31、32”)的周边部的位置处形成有多个对准标记46。通常，为单个半导体基板形成有两个以上对准标记46。
如图8所示，对准标记46形成为埋置在形成布线层33表面的绝缘层35中，使得对准标记46的表面具有与用于连接的金属电极45的表面相同的高度。对准标记46可具有能够基于磁力定位并且在半导体器件31、32相互连接时不会产生问题的任意高度。优选地，如图8所示对准标记46嵌入在绝缘层35中。或者，对准标记46可形成为从绝缘层35的表面突出。在此情况下，可以注入液体树脂以填充连接之后形成的任何空隙。若对准标记46比用于连接的金属电极45突出地多，则会产生连接困难，因此这不是优选的。
形成在半导体元件31、32上的多个对准标记46中的至少一个是由磁性材料制成的。特别优选的是，两个以上对准标记46由磁性材料形成。更优选的是，全部对准标记46由磁性材料形成。
形成在半导体器件31、32上的对准标记46是由顺磁性材料制成的，并且应当仅在安装半导体器件31、32时进行定位的时候被磁化，而在其他时候不可被磁化。在安装后，可使形成对准标记46的磁性材料消磁。
例如可以使用含有选自铁(Fe)、钴(Co)和镍(Ni)中的至少一种的材料作为形成对准标记46的磁性材料。也可以使用含有选自上述材料的两种以上的合金。
利用由磁性材料形成的对准标记46，可通过自对准进行半导体器件31和32之间的定位。这样，在不进行光学定位的情况下能够进行高精度定位。
上述的基于对准标记的定位不限于应用于特定类型的连接，并且，除了上述的通过金属电极进行的连接之外，还可应用于基板间的任何类型的连接。例如，这种定位还可应用于通过等离子体连接进行的基板间的连接。
4.第二实施例的半导体器件的制造方法
下面，将说明第二实施例的半导体器件的制造方法。在制造方法的下面说明中，对于与上述第二实施例的半导体器件的部件相同的部件用与图8和图9中所使用的附图标记相同的附图标记来表示，由此省略这些部件的详细说明。
在下面的说明中，作为半导体器件的制造方法的示例，仅说明了在第一半导体器件31的半导体基板上的布线层中形成对准标记的方法。对半导体基板、布线层以及形成在半导体基板上和布线层中的各种元件的形成方法不作说明。半导体基板、布线层和金属电极等可以通过相关技术的方法制造。此外，对于第二半导体器件32，可以按照与第一半导体器件31相同的方式形成对准标记，且半导体基板、布线层和金属电极等可以根据相关技术的方法制造。
首先，根据相关技术的方法，在第一半导体基板50上形成布线层33(未示出)。然后，在形成最前绝缘层35之后，如图10A所示，在绝缘层35上形成光致抗蚀剂层47。例如，利用旋转涂敷方法涂敷感光性抗蚀剂材料使其覆盖第一半导体基板50的整个表面，然后烘干该涂敷膜，从而形成光致抗蚀剂层47。
接下来，如图10B所示，利用光掩模48在光致抗蚀剂层47上进行曝光处理。使用能够让待形成对准标记的区域被曝光光照射的图形作为光掩模48。然后，如图10C所示，对光致抗蚀剂层47进行显影处理，从而除去光致抗蚀剂层47的被曝光部分，于是在光致抗蚀剂层47中形成开口部49。
接下来，如图10D所示，通过干式蚀刻，除去从光致抗蚀剂层47的开口部49中曝光的绝缘层35。通过除去开口部49中的绝缘层35，在绝缘层35的待形成对准标记的位置处形成凹部51。然后，如图11E所示，从绝缘层35剥离光致抗蚀剂层47。
在剥离光致抗蚀剂层47之后，如图11F所示，利用溅射方法涂敷绝缘层35的表面和界定出绝缘层35的凹部51的表面，从而形成阻挡层52。例如，利用溅射方法在绝缘层35上形成Ti层，然后再利用溅射方法形成覆盖该Ti层的Cu层，从而形成阻挡层52。
接下来，如图11G所示，在绝缘层35的表面和绝缘层35的凹部51中，利用电解电镀方法形成用于形成对准标记的电镀层53。这样，在至少一个凹部51中形成了由磁性材料制成的电镀层53。在形成由磁性材料制成的对准标记46的情况下，利用Ni、Fe和Co中的至少一种形成电镀层53。在结合使用由磁性材料制成的对准标记46和由非磁性材料制成的对准标记46的情况下，电镀层53可以通过多个电解电镀工序形成。在此情况下，所需的凹部51覆盖有抗蚀剂等，以选择向哪个凹部51填充电镀层53。在形成由非磁性材料制成的对准标记46的情况下，电镀层53例如是由Ti、TiW、W或Cu等形成的。
接下来，如图11H所示，利用化学机械研磨(CMP)方法除去形成在绝缘层35上的电镀层53，使得电镀层53仅保留在凹部51中，从而形成对准标记46。对准标记46可通过上述工序形成在第一半导体器件31中。在形成对准标记46之后，为了保护第一半导体器件31的表面，如图11I所示，可在第一半导体器件31的表面上形成绝缘层54。
下面，将说明通过上述工序制造的半导体器件的连接方法。
首先，准备如上所述地形成有对准标记46的第一半导体器件31和包括与第一半导体器件31的电极45和对准标记46相对应的电极45和对准标记46的第二半导体器件32。
然后，将第一半导体器件31和第二半导体器件32相对于彼此定位。在对准标记46由顺磁性材料形成的情况下，对磁性材料进行磁化以基于磁性材料的磁力进行定位。通过利用具有不同极性的磁性材料进行定位，通过吸引磁力修正第一半导体器件31和第二半导体器件32的各位置，从而即使在半导体器件以相对低的定位精确度相互接触的情况下，也能够实现高精度定位。
接下来，在第一半导体器件31和第二半导体器件32相对于彼此定位之后，在它们各自的金属电极45相互接触的情况下，在300℃~600℃的温度下进行热处理。这使得金属电极45相互连接，从而使第一半导体器件31和第二半导体器件32相互地电连接且机械连接。
可通过上述工序制造由图8所示的第一半导体器件31和第二半导体器件32形成的半导体器件30。在形成半导体器件30之后，可使由磁性材料制成的对准标记46消磁。可在金属电极45相互连接时所进行的上述加热处理的同时进行消磁。在磁性材料是由Ni制成的且金属电极45例如是由Cu制成的情况下，Ni的居里温度(627℃)与Cu电极的连接温度彼此接近，因此可以在同一工序中进行消磁和连接。
5.根据实施例的电子器件
下面，将说明包括上述固体摄像器件的实施例的电子装置。
上述固体摄像器件例如可适用于例如数码相机和摄像机等相机系统、具有摄像功能的手机和具有摄像功能的其他装置等电子装置。图12示出了将固体摄像器件应用于作为电子装置的示例的能够拍摄静态图像或电影的相机中的示意性结构。
本实施例的相机60包括固体摄像器件61、将入射光导入固体摄像器件61的感光部的光学系统62、设置在固体摄像器件61与光学系统62之间的快门器件63以及驱动固体摄像器件61的驱动电路64。相机60还包括对固体摄像器件61的输出信号进行处理的信号处理电路65。
可用上述第二实施例的半导体器件作为固体摄像器件61。光学系统(光学透镜)62根据来自物体的图像光(入射光)而在固体摄像器件61的摄像面(未示出)上形成图像。这允许在一定周期内在固体摄像器件61中累积信号电荷。光学系统62可由包括多个光学透镜的光学透镜组形成。快门器件63控制使入射光照射固体摄像器件61的周期以及对入射光进行遮挡的周期。
驱动电路64向固体摄像器件61和快门器件63提供驱动信号。通过所提供的驱动信号，驱动电路64控制固体摄像器件61的操作以向信号处理电路65输出信号，并且控制快门器件63的快门操作。也就是说，在本实施例中，固体摄像器件61根据从驱动电路64提供的驱动信号(定时信号)而将信号传输至信号处理电路65。
信号处理电路65对从固体摄像器件61传输来的信号进行各种信号处理。已经进行了各种信号处理的信号(视频信号)被存储在诸如存储器等存储介质(未示出)中，或者被输出至监视器(未示出)。
本发明可配置如下。
(1)一种半导体器件，其包括：半导体元件；连接电极，所述连接电极形成在所述半导体元件上；以及对准标记，所述对准标记形成在所述半导体元件上，其中，至少一个所述对准标记由磁性材料制成。
(2)根据(1)所述的半导体器件，还包括：底部填充树脂，其形成为覆盖所述连接电极。
(3)根据(1)或(2)所述的半导体器件，其中，所述磁性材料含有Fe、Co和Ni中的至少一种。
(4)根据(1)~(3)中任一项所述的半导体器件，其中，由所述磁性材料制成的所述对准标形成在所述半导体器件的两个以上位置处。
(5)根据(1)~(4)中任一项所述的半导体器件，其中，所述对准标记距所述半导体元件表面的高度等于或者小于所述连接电极的高度并且等于或者大于形成有所述连接电极的表面的高度。
(6)一种半导体器件，其包括：半导体基板；布线层，所述布线层形成在所述半导体基板上；连接电极，所述连接电极形成在所述布线层的表面上；以及对准标记，所述对准标记与所述连接电极形成在同一层，其中，至少一个所述对准标记由磁性材料制成。
(7)一种半导体器件的制造方法，其包括如下步骤：准备上面形成有半导体元件的基板；在所述基板上形成对准标记；以及在所述基板上形成连接电极，其中，在所述形成对准标记的步骤中，至少一个形成在所述半导体元件上的所述对准标记由磁性材料制成。
(8)根据权利要求(7)所述的半导体器件的制造方法，还包括如下步骤：将所述磁性材料加热至居里温度或更高温度，以对所述对准标记进行消磁。
本领域技术人员应当理解，依据设计要求和其他因素，可以在本发明所附的权利要求或其等同物的范围内进行各种修改、组合、次组合以及改变。

Claims (8)

1.一种半导体器件，其包括：
半导体元件；
连接电极，其形成于所述半导体元件上；以及
对准标记，其形成于所述半导体元件上，
其中，至少一个所述对准标记由磁性材料制成。
2.根据权利要求1所述的半导体器件，还包括：
底部填充树脂，其形成为覆盖所述连接电极。
3.根据权利要求1或2所述的半导体器件，其中，所述磁性材料包含Fe、Co和Ni中的至少一种。
4.根据权利要求1或2所述的半导体器件，其中，由所述磁性材料制成的所述对准标记形成于所述半导体器件的两个以上位置处。
5.根据权利要求1或2所述的半导体器件，其中，所述对准标记距所述半导体元件表面的高度等于或者小于所述连接电极的高度并且等于或者大于形成有所述连接电极的表面的高度。
6.一种半导体器件，其包括：
半导体基板；
布线层，其形成于所述半导体基板上；
连接电极，其形成于所述布线层的表面上；以及
对准标记，其与所述连接电极形成于同一层，
其中，至少一个所述对准标记由磁性材料制成。
7.一种半导体器件的制造方法，其包括如下步骤：
准备上面形成有半导体元件的基板；
在所述基板上形成对准标记；以及
在所述基板上形成连接电极，
其中，在所述形成对准标记的步骤中，至少一个形成于所述半导体元件上的所述对准标记由磁性材料制成。
8.根据权利要求7所述的半导体器件的制造方法，还包括如下步骤：
将所述磁性材料加热至居里温度或更高温度以对所述对准标记进行消磁。
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