TWI497678B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI497678B
TWI497678B TW101118058A TW101118058A TWI497678B TW I497678 B TWI497678 B TW I497678B TW 101118058 A TW101118058 A TW 101118058A TW 101118058 A TW101118058 A TW 101118058A TW I497678 B TWI497678 B TW I497678B
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semiconductor device
alignment mark
semiconductor
magnetic material
height
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TW101118058A
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TW201250975A (en
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Satoru Wakiyama
Masaki Minami
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Sony Corp
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description

半導體裝置及其製造方法
本發明技術係關於一種包含允許在連接期間定位之對準標記之半導體裝置及一種用於該半導體裝置之製造方法。
在相關技術中，使用形成在一半導體裝置上之一佈線層中之對準標記以諸如在使用焊料凸塊之覆晶安裝中及在半導體基板之間之連接中連接一半導體裝置。該等對準標記係用於光學定位(其中使用一相機或類似物)以連接半導體裝置。
揭示一種在一半導體元件及一電路基板(該半導體元件待安裝至該電路基板上)上形成不具有由磁性材料製成之電連接之凸塊電極以使用磁性材料之吸引磁力而達成自對準之技術(例如，參見日本未審查專利申請公開案第2005-268623號及第2006-41534號)。亦揭示一種在用於一半導體元件與一佈線基板之間的電連接之凸塊中設置磁性材料以當該半導體元件安裝至一電路基板上時使用該磁性材料之磁力而達成自對準之技術(例如，參見日本未審查專利申請公開案第10-112477號)。
對於一半導體裝置之連接，期望改良電極之間的連接之可靠度。特定言之，期望改良在連接期間之定位準確度，此係因為半導體元件與電路基板之間的間隔及電極之間的間距隨著半導體元件之小型化而變小。
當使用一光學相機執行定位時，包含該光學相機之一裝置辨識形成在一半導體元件上之對準標記以執行定位。因此，定位準確度在相當大的程度上取決於該光學相機之準確度。
根據日本未審查專利申請公開案第2005-268623號及第2006-41534號之半導體元件安裝技術未描述一種使用凸塊電極或類似物連接一半導體元件與一電路基板之特定方法或一種使凸塊電極磁化之方法。因此，該等技術無法改良半導體元件與電路基板之間的定位準確度以改良電極之間的連接之可靠度。
在根據日本未審查專利申請公開案第10-112477號之技術中，在凸塊電極或虛設凸塊中使用磁性材料。接著，在安置半導體元件後，使該磁性材料磁化以執行準確定位。在該技術中，當首先安置該半導體元件時，該等凸塊電極未相對於彼此準確定位。因此，若在首先安置該半導體元件時引起明顯的位置偏差，則可能無法使用磁力來執行自對準以增強該等凸塊電極之間的定位準確度。
運用如上文所討論之根據日本未審查專利申請公開案第2005-268623號、第2006-41534號及第10-112477號之技術，難以增強在半導體元件之電極連接期間之定位準確度，且難以改良連接可靠度。
可期望提供一種改良定位準確度以改良連接可靠度之半導體裝置及一種用於該半導體裝置之製造方法。
根據本發明技術之一實施例，提供一種半導體裝置，其 包含：一半導體元件；一連接電極，其形成在該半導體元件上；及對準標記，其等形成在該半導體元件上，其中該等對準標記之至少一者係由磁性材料製成。
根據本發明技術之另一實施例，提供一種半導體裝置，其包含：一半導體基板；一佈線層，其形成在該半導體基板上；一連接電極，其形成在該佈線層之一表面上；及對準標記，其等形成在與該連接電極相同的層中，其中該等對準標記之至少一者係由磁性材料製成。
根據本發明技術之又另一實施例，提供一種用於一半導體裝置之製造方法，其包含：製備一半導體元件形成在其上之一基板；在該基板上形成對準標記；及在該基板上形成一連接電極，其中形成在該半導體元件上之對準標記之至少一者係由磁性材料製成。
根據上文所討論之半導體裝置及用於該半導體裝置之製造方法，半導體元件之對準標記之至少一者係由磁性材料製成。藉由對由磁性材料製成之對準標記提供磁性，在該半導體元件之連接電極之連接期間，該等對準標記在無光學定位之情況下透過該磁性材料之磁力而相對於彼此準確定位。此改良安置半導體裝置之定位準確度且改良該半導體裝置之電極連接之可靠度。
下文將描述本發明技術之實施例。然而，本發明技術不限於此等實施例。
將按以下次序進行描述。
1.根據第一實施例之半導體裝置
2.用於根據第一實施例之半導體裝置之製造方法
3.根據第二實施例之半導體裝置
4.用於根據第二實施例之半導體裝置之製造方法
5.根據實施例之電子裝置
<1.根據第一實施例之半導體裝置>
下文將描述根據一第一實施例之一半導體裝置。
圖1係繪示根據第一實施例之半導體裝置之組態之一橫截面視圖。在圖1中之橫截面中所繪示之一半導體裝置10包含形成在一半導體元件11上之墊電極12上之凸塊電極19及對準標記15。圖2係繪示根據該第一實施例之凸塊電極19形成在其上之半導體裝置之一表面之組態之一平面圖。
如在圖1中所繪示，半導體裝置10包含半導體元件11上之墊電極12。一鈍化層13經形成遍佈於半導體元件11上，唯墊電極12上之開孔除外。
凸塊電極19係形成在墊電極12上以用作用於與一外部裝置連接之電極。凸塊電極19包含：一障壁層14，其形成在墊電極12上；一凸塊下金屬(UBM)16，其形成在障壁層14上；及一凸塊17，其形成在UBM 16上。如在圖2中所繪示，凸塊電極19係以一陣列形成在半導體元件11之一主表面上。
墊電極12係由例如鋁製成且經由半導體元件11而連接至一基板(未繪示)上之一電子電路。鈍化層13係形成在墊電極12之一表面之環繞部分上。障壁層14及UBM 16係形成 在墊電極12之表面之中心部分上。
半導體裝置10亦包含形成在鈍化層13上之對準標記15。一底填充樹脂18經形成遍佈於半導體元件11上以覆蓋凸塊電極19、對準標記15及鈍化層13。
在半導體裝置10中，如在圖2中所繪示，凸塊電極19係形成在半導體元件11之中心側上。對準標記15係形成在相對於凸塊電極19之外周邊側上。對準標記15係分別設置在半導體元件11之四個角隅處。
障壁層14經形成以塗佈墊電極12之中心部分。障壁層14係形成在鈍化層13之一部分上，鈍化層13係形成在墊電極12之表面之環繞部分上及UBM 16下。
額外障壁層14係形成在對準標記15與鈍化層13之各自底部之間，如同形成在墊電極12上之障壁層。
障壁層14係由例如Ti或Cu形成。
UMB 16係經由上文所討論之障壁層14而形成在墊電極12之中心部分上。凸塊17係形成在UBM 16上。以此方式，由障壁層14、UBM 16及凸塊17形成之凸塊電極19形成在墊電極12上。
UBM 16經形成以具有一特定厚度或此外以抵抗歸因於形成凸塊17之焊料之腐蝕。UBM 16係由例如Ni、Ti、TiW、W或Cu形成。通常，UBM 16係形成為比障壁層14及墊電極12厚以防止形成在UBM 16上之焊料合金(諸如SnAg)擴散至由AlCu、Cu或類似物製成之墊電極12上。
凸塊17係以自墊電極12向上突出之一半球形狀形成在 UBM 16上。凸塊17係由例如焊料合金(諸如SnAg)形成。焊料合金可能無法如凸塊17般形成在UBM 16上，且UBM 16可經受使用Ni、Au等之一抗氧化處理。
對準標記15係形成在半導體元件11上之預定位置處之一圖案中。例如，如在圖2中所繪示，複數個對準標記15係形成在環繞其中形成凸塊電極19之一區且在接近半導體元件11之角隅之位置處之一區域中。通常，對於一單個半導體元件11形成兩個或兩個以上對準標記15以相對於另一半導體裝置、一安裝基板或類似物而定位半導體裝置10。
如在圖1中所繪示，對準標記15經形成呈一柱形形狀。柱形對準標記15自半導體元件11之表面之高度等於或小於形成在墊電極12上之凸塊電極19之高度。對準標記15可具有允許甚至在形成底填充樹脂18後容易辨識對準標記15且在安裝半導體裝置10時不造成任何麻煩之任何高度。例如，對準標記15之高度可與底填充樹脂18之高度相同。對準標記15之高度較佳等於或小於底填充樹脂18之高度。
形成在半導體元件11上之複數個對準標記15之至少一者係由磁性材料製成。形成在半導體元件11上之對準標記15係由在磁化時變為鐵磁性之一順磁性材料製成。例如，含有選自鐵(Fe)、鈷(Co)及鎳(Ni)之至少一種之材料可用作為形成對準標記15之磁性材料。亦可使用含有選自上述材料之兩種或兩種以上之合金。
對準標記15應僅在安裝半導體裝置10時執行之定位時被磁化，且可不必在其他時間被磁化。形成對準標記15之磁 性材料可在安裝後被消磁。例如，可使用永久磁鐵或電磁鐵以使該磁性材料磁化。亦可使用一脈衝雷射消融方法(PLD)。例如，可藉由將該磁性材料加熱至居禮(Curie)溫度或更高溫度而使該磁性材料消磁。
對準標記15之數目不限於如在圖2中所繪示之四個，且可為兩個或兩個以上。在此情況下，對準標記15之至少一者可由磁性材料形成。尤其較佳地，兩個或兩個以上對準標記15係由磁性材料形成。又更佳地，所有對準標記15皆由磁性材料形成。
可組合使用由磁性材料製成之對準標記及由非磁性材料製成之對準標記。在此情況下，由非磁性材料製成之對準標記15較佳係由與UBM 16之材料(舉例而言，諸如Ti、TiW、W或Cu)相同的材料形成。此等對準標記15亦可由與UBM 16之材料不同的材料形成。由非磁性材料形成之對準標記亦經形成以具有與由磁性材料製成之對準標記之高度相同的高度。
形成對準標記15之位置不限於圖2中所繪示之半導體元件11之角隅附近之四個位置，且例如考量到半導體元件11之形狀，可將對準標記15形成在所要位置處。
在使用一光學相機執行定位之情況下，有必要在半導體元件之角隅之側上相對於形成凸塊電極之位置形成對準標記。此係因為有必要在定位期間將該光學相機內插在半導體元件11與安裝表面之間以確認該等對準標記之各自位置。在其中對準標記15係由磁性材料形成使得使用該磁性 材料之磁力執行定位之情況下，無需內插一光學相機。因此，與上文所討論由非磁性材料製成之對準標記相比，由磁性材料製成之對準標記15提供關於形成該等對準標記之一較大自由度。例如，對準標記15可甚至形成在一光學相機無法內插在半導體裝置10與安裝表面之間的位置處。
當半導體裝置10係在由磁性材料製成之對準標記15被磁化之後安裝至另一半導體裝置、一安裝基板或類似物時，使用對準標記15之磁力定位半導體裝置10且在一回流爐中熔融底填充樹脂18。以此方式，在回流期間藉由對準標記15之磁力執行自對準。
底填充樹脂18經形成至使得當安裝半導體裝置10時凸塊17之連接部分及半導體裝置10之安裝表面塗佈有底填充樹脂18之一厚度。例如，底填充樹脂18自半導體元件11之表面之厚度較佳等於或大於在安裝後半導體裝置10之安裝表面與該半導體裝置10所安裝至之一半導體裝置、一安裝基板或類似物之安裝表面之間的距離。在半導體裝置10與安裝基板或類似物之間之空間填充有底填充樹脂18之情況下，可確保安裝可靠度。
例如使用酚醛、胺、酸酐固化劑之熱固性樹脂較佳用作為底填充樹脂18。考量到在回流期間之自可對準度，底填充樹脂18較佳具有0.01 Pa．s至10 Pa．s之一最小熔融黏度。若該樹脂之熔融黏度過低，則底填充樹脂18可具有一明顯高的流動性以自半導體裝置10之安裝表面流出。同時若該樹脂之熔融黏度過高，則該樹脂可具有一低流動性以抵抗 歸因於在回流期間對準標記15之磁力之自對準。
底填充樹脂18較佳含有具有助焊劑活性之材料。在回流期間首先使具備助焊劑活性之底填充樹脂18熔融以減少凸塊17之表面上之氧化膜。接著，藉由由磁性材料製成之對準標記15之吸引力而使上凸塊及下凸塊彼此接觸以形成金屬連接。
雖然對準標記15係形成在半導體裝置10中之鈍化層13上，但是對準標記15亦可形成在與墊電極12相同的表面上。在此情況下，對準標記15可由與墊電極12之材料相同的材料形成。
圖3繪示其中上文所討論之半導體裝置10係透過凸塊電極19而彼此連接之一狀態。
在圖3中所繪示之組態中，具有相同組態之半導體裝置10經安置而使在其上形成凸塊電極19之其等表面彼此面對。一上半導體裝置10A及一下半導體裝置10B透過其等各自的凸塊電極19而彼此連接。凸塊電極19彼此整合且形成其等表面之凸塊17擴散以電連接上半導體裝置10A及下半導體裝置10B。
底填充樹脂18使上半導體裝置10A及下半導體裝置10B彼此機械連接使得由凸塊電極19形成之連接部分形成在底填充樹脂18中。以此方式，底填充樹脂18填充上半導體裝置10A與下半導體裝置10B之間之一空間以形成一填角。
上半導體裝置10A及下半導體裝置10B經安置而使形成於半導體元件11上之其等各自對準標記15相對於彼此定 位。
藉由給連接表面提供由磁性材料製成之對準標記15及使該磁性材料磁化，可使用該磁性材料之吸引磁力而使對準標記15相對於彼此準確定位。因此，可在不使用一光學相機或類似物之情況下準確定位上半導體裝置10A及下半導體裝置10B。
特定言之，在兩個或兩個以上對準標記15係由磁性材料形成之情況下，可僅使用磁力達成一高定位準確度。
如上文所討論，由磁性材料製成之對準標記係形成在經受例如使用凸塊電極之覆晶接合之上半導體裝置10A及下半導體裝置10B之各自半導體元件11上。因此，當凸塊在使用磁力定位上半導體元件及下半導體元件之後在一回流程序中熔融時，藉由該磁性材料之吸引力移動半導體元件11以校正位置。此實現透過自對準之高準確度定位。
在圖3中所繪示之組態中，進一步相對磁場經施加至形成在上半導體元件及下半導體元件中之各自磁性材料，且含有助焊劑活化組分之底填充樹脂18係預先形成在上半導體元件11及下半導體元件11之至少一者上。由於具有助焊劑活性之底填充樹脂18係預先形成在半導體裝置10之表面上，故在回流程序期間執行其中同時執行基於磁性材料之吸引力之凸塊連接及定位之自對準。特定言之，可按一減少的生產時間且以使用20 μm或更小之微凸塊之連接之一改良準確度執行定位，其中定位準確度因光學相機之準確度之限制而無法以光學方式進行改良。
使用在回流溫度下具有助焊劑活性以及0.01 Pa．s至10 Pa．s之一最小熔融黏度之底填充樹脂減少在回流期間該樹脂之阻力，且促進基於被磁化之磁性材料之吸引力之定位。
此外，在半導體裝置10彼此連接後，由磁性材料製成之對準標記可經消磁以不再具有磁力。此防止在連接後歸因於磁力之半導體裝置10之一錯誤操作等。
接著，將描述半導體裝置10中之對準標記15之高度。
如在圖3中所繪示，形成在上半導體元件11及下半導體元件11上之對準標記15之高度B經調整使得具有彼此接觸之其等各自磁性材料或永久磁鐵之上半導體元件11與下半導體元件11之間的距離A允許各自凸塊17彼此接觸以確保電連接。
例如，如對準標記15之高度B，柱形對準標記15自半導體元件11之表面之高度可等於或小於形成在墊電極12上之凸塊電極19之高度且等於或大於其上形成凸塊17之表面之高度。在圖3中所繪示之組態中，凸塊17係形成在UBM 16上。因此，對準標記15之高度可等於或大於UBM 16之高度且等於或小於凸塊17之高度。例如，在焊料合金等並未如凸塊17般形成在UBM 16上之一組態中，對準標記15之高度可等於或大於墊電極12之高度且等於或小於UBM 16之高度。特定言之，對準標記15之高度較佳與UBM 16之高度相同。
對準標記15可具有在安裝半導體裝置10時不造成麻煩之 任何高度。例如，對準標記15之高度較佳等於或小於底填充樹脂18之高度。
上半導體元件及下半導體元件上之對準標記15可能無法經形成以具有相同高度，且該等半導體元件之一者上之對準標記15可(例如)較短。上半導體裝置10A及下半導體裝置10B上之對準標記15之各自高度未經特定限制，只要在半導體元件彼此連接之情況下上半導體裝置10A上之對準標記15之高度及下半導體裝置10B上之對準標記15之高度之總和確保上文所討論之距離A。
在上文所討論之實施例中，具有相同組態之半導體裝置10彼此連接。然而，半導體裝置10可連接至除半導體裝置10外的一物件。半導體裝置10可連接至具有一不同組態(其包含如同半導體裝置10之對準標記般由磁性材料製成之對準標記)之一半導體裝置、一電路基板或類似物。對於由磁性材料製成且在位置上彼此對應之一對對準標記，若該對之一者具有磁力，則該對之另一者可不經磁化。
<2.用於根據第一實施例之半導體裝置之製造方法>
接著，將描述用於根據第一實施例之半導體裝置之一製造方法。在該製造方法之下文描述中，藉由與在圖1至圖3中所使用之參考數字相同的參考數字表示與上文所討論之根據第一實施例之半導體裝置之組件相似的組件，以省略該等組件之一詳細描述。在下文所述之橫截面中繪示形成在一半導體基板上之複數個半導體元件之僅一者。
首先，如在圖4A中所繪示，製備其中墊電極12及一鈍化 層13形成在一半導體元件11上之一半導體基板。接著，對該基板上之半導體元件11之一表面執行反向濺鍍以移除墊電極12之表面上之氧化膜等。
接著，如在圖4B中所繪示，使用一濺鍍方法塗佈墊電極12及鈍化層13以遍佈半導體元件11形成一障壁層14。例如，藉由使用一濺鍍方法而在墊電極12及鈍化層13上形成Ti層且接著亦使用一濺鍍方法而形成Cu層以塗佈該Ti層而形成障壁層14。
接著，如在圖4C中所繪示，在障壁層14上形成一光阻層21。例如，藉由使用一旋塗方法而塗敷一感光抗蝕材料以覆蓋基板之整個表面且接著乾燥塗敷膜而形成光阻層21。光阻層21經形成以具有大於待形成在半導體元件11上之對準標記15之高度之一厚度。
接著，如在圖4D中所繪示，使用一光罩22對光阻層21執行一曝光程序。將允許其中待形成對準標記之區被曝光光照射之一圖案用作為光罩22。接著，如在圖4E中所繪示，使光阻層21經受一顯影程序以移除光阻層21之暴露部分以在光阻層21中形成開孔部分23。該等開孔部分23係形成在對應於待形成對準標記之位置之位置處。
接著，如在圖5F中所繪示，使用一電解電鍍方法在光阻層21之開孔部分23中形成對準標記15。形成在半導體元件11上之對準標記15之至少一者係使用磁性材料形成。此導致在半導體元件11及障壁層14上形成對準標記15。
在對準標記15係由磁性材料形成之情況下，對準標記15 係形成為含有選自Ni、Fe及Co之至少一種之一電鍍層。
在組合使用由磁性材料製成之對準標記15及由非磁性材料製成之對準標記15之情況下，由非磁性材料製成之對準標記15係形成為例如Ti、TiW、W、Cu或類似物之一電鍍層。
對準標記15之高度等於或小於待形成在墊電極12上之凸塊電極19之高度，且等於或大於待在其上形成凸塊17之一表面之高度。在焊料合金等未如凸塊17般形成在UMB 16上之情況下，對準標記15之高度與UBM 16之高度相同。
接著，如在圖5G中所繪示，移除半導體元件11上之光阻層21。接著，如在圖5H中所繪示，在障壁層14上形成一光阻層24。藉由例如使用一旋塗方法塗敷一材料以覆蓋基板之一表面及對準標記15且接著乾燥塗敷膜而形成光阻層24。
接著，如在圖5I中所繪示，使用一光罩25對光阻層24執行一曝光程序。將允許墊電極12之各自中心部分被曝光光照射之一圖案用作為光罩25。接著，在曝光後，使光阻層24經受一顯影程序以移除暴露部分以在光阻層24中形成開孔部分26。
接著，如在圖6J中所繪示，使用一電解電鍍方法在開孔部分26中形成UBM 16。此外，如在圖6K中所繪示，使用一電解電鍍方法在開孔部分26中UBM 16上形成焊料層17A。UBM 16係形成為例如Ni、Ti、TiW、W或Cu之電解電鍍。焊料層17A係形成為焊料合金(諸如SnAg)之電解電 鍍。
接著，移除光阻層24，且此後藉由濺鍍蝕刻而移除暴露於半導體元件11之表面之障壁層14。接著，如在圖6L中所繪示，藉由回流熔融焊料層17A以形成凸塊17。在移除障壁層14中，UBM 16及焊料層17A用作基板之整個表面之遮罩使得障壁層14保留在UBM 16下方。對準標記15亦用作蝕刻遮罩使得障壁層14亦保留在對準標記15下方。藉由憑藉回流而將焊料層17A形成至半球形凸塊17中，在墊電極12上形成由UBM 16及凸塊17形成之凸塊電極19。
在此狀態中，假使對準標記係由順磁性材料形成，則使該等對準標記磁化。
例如，使用一永久磁鐵或電磁鐵以使對準標記15磁化。或者使用一脈衝雷射消融方法(PLD)。由於此程序，一磁場經施加至磁性材料。該磁場經施加具有直接垂直於半導體元件11之表面之磁通量。對準標記15經磁化使得半導體裝置10之對準標記15之磁極性與半導體裝置10安裝至之一裝置之對準標記之磁極性相反。
接著，如在圖6M中所繪示，在半導體元件11側上基板之一表面上形成底填充樹脂18。例如，藉由憑藉一旋塗方法塗敷含有一底填充樹脂之液體或層壓一底填充樹脂之一乾膜而形成底填充樹脂18。接著，自該基板切割半導體元件11以使半導體元件11分成個別部分以製造一半導體裝置10。
以上文所述之方式，使用光微影及電解電鍍在其上形成 半導體元件11之基板之一表面上形成對準標記15、UBM 16及焊料凸塊17。對準標記15經形成使得其等上表面之高度等於或小於凸塊電極19自在其上形成半導體元件11之表面之高度。當使用底填充樹脂18塗佈在其上形成凸塊電極19之半導體元件11之表面時，同時亦塗佈對準標記15。此時，底填充樹脂18經形成以具有等於或大於對準標記15之高度之一厚度。
在上文所討論之製造方法中，在自基板切割半導體元件11以使該半導體元件11分成個別部分之前執行形成對準標記15之磁性材料之磁化程序。然而，可在形成對準標記15後之任何時間執行該磁性材料之磁化程序。例如，可在將半導體元件11分成個別部分之後執行該磁性材料之磁化程序。
在根據上文所討論之實施例之製造方法中，在UBM 16及焊料層17A之形成程序前製造對準標記15。然而，UBM 16及焊料層17A之形成程序及對準標記15之形成程序之次序未經特定限制。可在障壁層14之形成程序後且在障壁層14之蝕刻程序前按任何次序執行對準標記15之形成程序及UBM 16及焊料層17A之形成程序。
接著，將描述用於藉由上文所討論之製造方法形成之半導體裝置10之連接之一方法。在下文描述中，將描述具有相同組態且在其上形成凸塊電極19之其等各自表面彼此面對之兩個半導體裝置10之連接作為半導體裝置10之連接之一實例。
首先，如在圖7N中所繪示，上半導體裝置10A及下半導體裝置10B相對於彼此而定位。在不執行光學定位之情況下使用具有不同極性且設置在對準標記15中之磁性材料而執行此定位。此使上半導體裝置10A及下半導體裝置10B甚至在使該等半大體裝置以相對較低的定位準確度彼此接觸之情況下亦能夠基於吸引磁力而定位。
接著，如在圖7O中所繪示，在一回流爐中加熱上半導體裝置10A及下半導體裝置10B同時使該等半導體裝置10A及10B相對於彼此而定位。在回流期間，執行加熱至凸塊17之熔點或更高溫度以使凸塊17熔融以供連接。例如，在凸塊17由Sn-3.5Ag製成之情況下，執行加熱至221℃或221℃以上之熔點。在此情況下，含有助焊劑活化組分之底填充樹脂18係在凸塊17前熔融使得在回流期間減少凸塊17之表面上之氧化膜。接著，藉由由磁性材料製成之對準標記15之吸引磁力而使上凸塊17及下凸塊17彼此接觸以形成金屬連接。
此外，加熱底填充樹脂18以使之固化。底填充樹脂18使上半導體裝置10A及下半導體裝置10B彼此接合以改良半導體元件之各自接合表面之間的機械連接之可靠度。可在用於上文所討論之凸塊17之連接之回流的同時執行用於使底填充樹脂18固化之加熱。
如上文所討論，當凸塊17藉由回流而熔融且此外底填充樹脂18變為流體時，上半導體裝置10A及下半導體裝置10B變得可自由移動。因此，藉由對準標記15之吸引磁力 而精細調整及校正上半導體裝置10A及下半導體裝置10B之各自位置。以此方式，運用由磁性材料製成之對準標記15，除在回流前執行初始定位外，在回流期間執行基於磁力之自對準以使上半導體裝置10A及下半導體裝置10B彼此接觸。
半導體裝置10可使用基於透過上文所述之程序形成對準標記15之磁性材料之磁力之定位而彼此連接。
由磁性材料製成之對準標記15可在上半導體裝置10A及下半導體裝置10B彼此連接後被消磁。可藉由將對準標記15加熱至用作為磁性材料之材料之居禮溫度或更高溫度而使對準標記15消磁。藉由使對準標記15消磁，可防止歸因於磁力之半導體裝置之一錯誤操作。
<3.根據第二實施例之半導體裝置>
接著，將描述根據一第二實施例之一半導體裝置。
除了關於上文所討論之第一實施例所述之半導體元件之間使用凸塊的覆晶接合外，根據本發明技術之實施例之基於由磁性材料製成之對準標記之定位亦可應用於半導體基板之間利用金屬電極之間的三維連接之連接。
圖8繪示其中一第一半導體裝置31及一第二半導體裝置32係透過金屬電極45連接之一半導體裝置30作為透過金屬電極連接之半導體裝置之一實例。
在圖8中所繪示之半導體裝置30包含：第一半導體裝置31，其包含其中配置複數個像素之一像素區；及第二半導體裝置32，其包含執行信號處理之一邏輯電路。第一半導 體裝置31及第二半導體裝置32係透過金屬電極45彼此電連接以形成一單個固態成像裝置。
第一半導體裝置31包含一第一半導體基板50。第一半導體基板50包含一光電轉換區段41，該光電轉換區段41設置在像素區中且包含用作各像素之一光電轉換區段、各像素電晶體之一源極/汲極區之一光二極體(PD)及形成在第一半導體基板50上之一閘極電極。一平坦化膜44係形成在第一半導體基板50與連接至第二半導體裝置32之第一半導體裝置31之一表面相對之一表面上。一彩色濾光器42及一晶片上微透鏡43係按此次序堆疊在光電轉換區段41上。
一佈線層33係形成在第一半導體基板50在半導體裝置31連接至第二半導體裝置32所處之側上之一表面上。佈線層33包含複數個絕緣層35、由形成在絕緣層35之各者中之導電層37形成之佈線及跨該等層而電連接導電層37之連接導體36。
用於連接之金屬電極45係形成在佈線層33之一表面40上(與第一半導體基板50相對之表面)。對準標記46經形成以環繞金屬電極45。
第二半導體裝置32包含一第二半導體基板55。包含用於信號處理之一信號處理電路之一邏輯電路係形成在第二半導體基板55上。形成該邏輯電路之複數個MOS電晶體係設置在第二半導體基板55在第二半導體裝置32連接至第一半導體裝置31所處之側上之一表面上。MOS電晶體之各者包含：一對源極/汲極區39，其等由一元件分離區分離；及 一閘極電極38，其經由閘極絕緣膜而形成。
一佈線層34係形成在第二半導體基板55上。佈線層34包含複數個絕緣層35、由形成在絕緣層35之各者中之導電層37形成之佈線及跨該等層而電連接導電層37之連接導體36。
用於連接之金屬電極45係形成在佈線層34之一最前面表面40上(與第二半導體基板55相對之表面)。對準標記46經形成以環繞金屬電極45。形成在第二半導體裝置32中之金屬電極45及對準標記46係形成在對應於上文所討論之第一半導體裝置31之用於連接之金屬電極45及對準標記46之位置之位置處。
如在圖9中所繪示，複數個對準標記46係形成在接近第一半導體裝置31及第二半導體裝置32(下文稱作「半導體裝置31、32」)之周邊部分之位置處。通常，對於一單個半導體基板形成兩個或兩個以上對準標記46。
如在圖8中所繪示，對準標記46經形成以嵌入於形成佈線層33之一表面之絕緣層35中，使得對準標記46之表面具有與用於連接之金屬電極45之高度相同的高度。對準標記46可具有實現基於磁力之定位且在半導體裝置31及半導體裝置32彼此連接時不造成麻煩之任何高度。較佳地，如在圖8中所繪示，對準標記46嵌入於絕緣層35中。或者，對準標記46可經形成以自絕緣層35之表面突出。在此情況下，可注入一液體樹脂以填充在連接後所形成之任何間隙。比用於連接之金屬電極45突出得遠之對準標記46使連 接變得困難，且因此並非較佳。
形成在半導體裝置31、32上之複數個對準標記46之至少一者係由磁性材料製成。尤其較佳地，兩個或兩個以上對準標記46係由磁性材料形成。又更佳地，所有複數個對準標記46皆由磁性材料形成。
形成在半導體裝置31、32上之對準標記46係由順磁性材料形成，且應僅在當安裝半導體裝置31、32時執行定位之時被磁化，且可不必在其他時間被磁化。形成對準標記46之磁性材料可在安裝後被消磁。
可將含有選自例如鐵(Fe)、鈷(Co)及鎳(Ni)之至少一種之材料用作為形成對準標記46之磁性材料。亦可使用含有選自上述材料之兩種或兩種以上之合金。
運用由磁性材料形成之對準標記46，可透過自對準執行半導體裝置31與半導體裝置32之間的定位。此實現在無光學定位之情況下之高準確度定位。
基於上文所討論之對準標記之定位不限於應用於一特定類型的連接，且除了透過上文所討論之金屬電極之連接外亦可應用於基板之間的任何類型的連接。例如，此定位亦可應用於基板之間透過電漿連接之連接。
<4.用於根據第二實施例之半導體裝置之製造方法>
接著，將描述用於根據第二實施例之半導體裝置之一製造方法。在該製造方法之以下描述中，藉由與圖8及圖9中所使用之參考數字相同的參考數字表示與上文所討論之根據第一實施例之半導體裝置之組件相似的組件以省略該等 組件之一詳細描述。
在以下描述中，將僅描述在上文所討論之第一半導體裝置31之一半導體基板上之一佈線層中形成對準標記之一方法作為用於該半導體裝置之製造方法之一實例。將不描述形成半導體基板、佈線層及形成在該半導體基板上及該佈線層中之各種元件之一方法。可藉由根據相關技術之一方法而製造半導體基板、佈線層及金屬電極等等。又對於第二半導體裝置32，可按相同於第一半導體裝置31的方式形成對準標記，且可藉由根據相關技術之一方法而製造半導體基板、佈線層及金屬電極等等。
首先，藉由根據相關技術之一方法而在一第一半導體基板50上形成一佈線層33(未繪示)。接著，如在圖10A中所繪示，在形成一最前面絕緣層35之後，於該絕緣層35上形成一光阻層47。藉由例如使用一旋塗方法而塗敷感光抗蝕材料以覆蓋第一半導體基板50之整個表面且接著乾燥塗敷膜而形成光阻層47。
接著，如在圖10B中所繪示，使用一光罩48對光阻層47執行一曝光程序。將允許其中待形成對準標記之區被曝光光照射之一圖案用作為光罩48。接著，如在圖10C中所繪示，使光阻層47經受一顯影程序以移除光阻層47之暴露部分以在光阻層47中形成開孔部分49。
接著，如在圖10D中所繪示，藉由乾式蝕刻移除自光阻層47之開孔部分49暴露之絕緣層35。藉由移除開孔部分49中之絕緣層35，在絕緣層35中在待形成對準標記之位置處 形成凹陷部分51。接著，如在圖11E中所繪示，自絕緣層35剝離光阻層47。
在剝離光阻層47後，使用一濺鍍方法塗佈絕緣層35之表面及界定絕緣層35之凹陷部分51之表面以形成一障壁層52，如在圖11F中所繪示。例如藉由使用一濺鍍方法在絕緣層35上形成Ti層且接著亦使用一濺鍍方法形成Cu層以塗佈該Ti層而形成障壁層52。
接著，如在圖11G中所繪示，使用一電解電鍍方法在絕緣層35之表面上及在絕緣層35之凹陷部分51中形成用於形成對準標記之一電鍍層53。在此情況下，在凹陷部分51之至少一者中形成由磁性材料製成之電鍍層53。在待形成由磁性材料製成之對準標記46之情況下，使用選自Ni、Fe及Co之至少一種而形成電鍍層53。在待組合形成由磁性材料製成之對準標記46及由非磁性材料製成之對準標記46之情況下，可藉由複數個電解電鍍程序而形成電鍍層53。在此情況下，使用一光阻或類似物覆蓋所要凹陷部分51以選擇哪個凹陷部分51欲用電鍍層53填充。在待形成由非磁性材料製成之對準標記46之情況下，由例如Ti、TiW、W、Cu或類似物形成電鍍層53。
接著，如在圖11H中所繪示，藉由一化學機械拋光(CMP)方法移除形成在絕緣層35上之電鍍層53，使得電鍍層53僅保留在凹陷部分51中以形成對準標記46。可透過上文所述之程序而在第一半導體裝置31中形成對準標記46。如在圖11I中所繪示，在形成對準標記46後，可在第一半 導體裝置31之表面上形成一絕緣層54以保護第一半導體裝置31之表面。
接著，將描述用於透過上文所討論之程序而製造之半導體裝置之連接之一方法。
首先，製備如上文所討論般形成對準標記46之一第一半導體裝置31及包含對應於第一半導體裝置31之電極及對準標記之電極45及對準標記46之一第二半導體裝置32。
接著，使第一半導體裝置31及第二半導體裝置32相對於彼此而定位。在對準標記46係由順磁性材料形成之情況下，磁性材料經磁化以執行基於該磁性材料之磁力之定位。藉由使用具有不同極性之磁性材料執行定位，第一半導體裝置31及第二半導體裝置32之各自位置經吸引磁力校正以實現甚至在使該等半導體裝置以一相對較低的定位準確度彼此接觸之情況下之高準確度定位。
接著，在使第一半導體裝置31及第二半導體裝置32相對於彼此定位後，在300℃至600℃之一溫度下執行一熱處理且使其等各自金屬電極45彼此接觸。此允許金屬電極45彼此結合使得第一半導體裝置31及第二半導體裝置32彼此電連接及機械連接。
可透過上文所述之程序製造在圖8中所繪示之由第一半導體裝置31及第二半導體裝置32形成之半導體裝置30。由磁性材料製成之對準標記46可在形成半導體裝置30後被消磁。可在執行上文所討論之使金屬電極45彼此結合之加熱程序的同時執行該消磁。在磁性材料係由Ni製成且金屬電 極45係由例如Cu製成之情況下，Ni之居禮溫度(其係627℃)及Cu電極之結合溫度彼此接近，且因此可在相同程序中執行該消磁及該結合。
<5.根據實施例之電子裝置>
接著，將描述根據一實施例之包含上文所討論之固態成像裝置之一電子裝置。
例如，上文所討論之固態成像裝置可應用於諸如相機系統(諸如數位相機及視訊攝影機)、具有一成像功能之蜂巢式電話及具有一成像功能之其他裝置之電子裝置。圖12繪示其中固態成像裝置應用於可擷取一靜止影像或一電影之一相機之一示意組態作為該等電子裝置之一實例。
根據實施例之一相機60包含：一固態成像裝置61；一光學系統62，其將入射光導引至固態成像裝置61之一光感測器區段；一快門裝置63，其設置在固態成像裝置61與光學系統62之間；及一驅動電路64，其驅動固態成像裝置61。相機60進一步包含處理固態成像裝置61之一輸出信號之一信號處理電路65。
可將上文所討論之根據第二實施例之半導體裝置用作為固態成像裝置61。光學系統(光學透鏡)62根據來自一主體之影像光(入射光)而在固態成像裝置61之一成像表面(未繪示)上形成一影像。此允許一信號電荷在固態成像裝置61中累積達一特定週期。光學系統62可由包含複數個光學透鏡之一光學透鏡群組形成。快門裝置63控制固態成像裝置61被入射光照射之一週期及阻擋該入射光之一週期。
驅動電路64將一驅動信號供應給固態成像裝置61及快門裝置63。透過該供應之驅動信號，驅動電路64控制固態成像裝置61之一操作以將一信號輸出至信號處理信號65且控制快門裝置63之一快門操作。即，在實施例中，固態成像裝置61根據自驅動電路64所供應之驅動信號(時序信號)而將一信號傳送至信號處理電路65。
信號處理電路65對自固態成像裝置61所傳送之信號執行各種信號處理。已執行各種信號處理之信號(視訊信號)係儲存在諸如一記憶體之一儲存媒體(未繪示)中或輸出至一監測器(未繪示)。
本揭示內容可如下般組態。
(1)一種半導體裝置，其包含：一半導體元件；一連接電極，其形成在該半導體元件上；及對準標記，其等形成在該半導體元件上，其中該等對準標記之至少一者係由一磁性材料製成。
(2)如(1)之半導體裝置，其進一步包含：一底填充樹脂，其經形成以覆蓋該連接電極。
(3)如(1)或(2)之半導體裝置，其中該磁性材料含有選自Fe、Co及Ni之至少一者。
(4)如(1)至(3)中任一項之半導體裝置，其中由該磁性材料製成之對準標記係形成在該半導體裝置上之兩個或兩個以上位置處。
(5)如(1)至(4)中任一項之半導體裝置，其中該等對準標記自該半導體元件之一表面之一高度等於或小於該連接電極 之一高度且等於或大於在其上形成該連接電極之一表面之一高度。
(6)一種半導體裝置，其包含：一半導體基板；一佈線層，其形成在該半導體基板上；一連接電極，其形成在該佈線層之一表面上；及對準標記，其等形成在與該連接電極相同的層中，其中該等對準標記之至少一者係由一磁性材料製成。
(7)一種用於一半導體裝置之製造方法，其包含：製備在其上形成一半導體元件之一基板；在該基板上形成對準標記；及在該基板上形成一連接電極，其中形成在該半導體元件上之對準標記之至少一者係由一磁性材料製成。
(8)如(7)之用於一半導體裝置之製造方法，其進一步包含：將該磁性材料加熱至居禮溫度或更高溫度以使該等對準標記消磁。
本揭示內容含有關於在2011年6月9日向日本專利局申請之日本優先權專利申請案JP 2011-129192中所揭示者之標的，該案之全部內容以引用的方式併入本文中。
熟習此項技術者應瞭解可取決於設計需求及其他因素而發生各種修改、組合、子組合及變更，只要該等修改、組合、子組合及變更係在隨附申請專利範圍或其等效物之範疇內。
10‧‧‧半導體裝置
10A‧‧‧上半導體裝置
10B‧‧‧下半導體裝置
11‧‧‧半導體元件
12‧‧‧墊電極
13‧‧‧鈍化層
14‧‧‧障壁層
15‧‧‧對準標記
16‧‧‧凸塊下金屬(UBM)
17‧‧‧凸塊
17A‧‧‧焊料層
18‧‧‧底填充樹脂
19‧‧‧凸塊電極
21‧‧‧光阻層
22‧‧‧光罩
23‧‧‧開孔部分
24‧‧‧光阻層
25‧‧‧光罩
26‧‧‧開孔部分
30‧‧‧半導體裝置
31‧‧‧第一半導體裝置
32‧‧‧第二半導體裝置
33‧‧‧佈線層
34‧‧‧佈線層
35‧‧‧絕緣層
36‧‧‧連接導體
37‧‧‧導電層
38‧‧‧閘極電極
39‧‧‧源極/汲極區
40‧‧‧佈線層之最前面表面/佈線層之表面
41‧‧‧光電轉換區段
42‧‧‧彩色濾光器
43‧‧‧晶片上微透鏡
44‧‧‧平坦化膜
45‧‧‧金屬電極
46‧‧‧對準標記
47‧‧‧光阻層
48‧‧‧光罩
49‧‧‧開孔部分
50‧‧‧第一半導體基板
51‧‧‧凹陷部分
52‧‧‧障壁層
53‧‧‧電鍍層
54‧‧‧絕緣層
55‧‧‧第二半導體基板
60‧‧‧相機
61‧‧‧固態成像裝置
62‧‧‧光學系統
63‧‧‧快門裝置
64‧‧‧驅動電路
65‧‧‧信號處理電路
A‧‧‧距離
B‧‧‧對準標記之高度
圖1係繪示根據一第一實施例之一半導體裝置之組態之一橫截面視圖； 圖2係繪示根據第一實施例之凸塊電極形成在其上之半導體裝置之一表面之組態之一平面圖；圖3繪示其中根據第一實施例之半導體裝置係透過凸塊電極彼此連接之一狀態；圖4A至圖4E圖解說明用於根據第一實施例之半導體裝置之一製造方法；圖5F至圖5I圖解說明用於根據第一實施例之半導體裝置之製造方法；圖6J至圖6M圖解說明用於根據第一實施例之半導體裝置之製造方法；圖7N至圖7P圖解說明用於根據第一實施例之半導體裝置之連接之一方法；圖8係繪示根據一第二實施例之一半導體裝置之組態之一橫截面視圖；圖9係繪示根據第二實施例之對準標記形成在其上之半導體裝置之一表面之組態之一平面圖；圖10A至圖10D圖解說明用於根據第二實施例之半導體裝置之一製造方法；圖11E至圖11I圖解說明用於根據第二實施例之半導體裝置之製造方法；及圖12繪示一電子裝置之組態。
10‧‧‧半導體裝置
11‧‧‧半導體元件
12‧‧‧墊電極
13‧‧‧鈍化層
14‧‧‧障壁層
15‧‧‧對準標記
16‧‧‧凸塊下金屬(UBM)
17‧‧‧凸塊
18‧‧‧底填充樹脂
19‧‧‧凸塊電極

Claims (16)

  1. 一種半導體裝置，其包括：一半導體元件；一連接電極，其形成在該半導體元件上；複數個對準標記，其等形成在該半導體元件上，其中該複數個對準標記之至少一對準標記係由一磁性材料製成；及一底填充樹脂層，其中該底填充樹脂層之厚度係大於由該磁性材料製成之該至少一對準標記之高度，且其中該底填充樹脂層覆蓋由該磁性材料製成之該至少一對準標記。
  2. 如請求項1之半導體裝置，其中該底填充樹脂層覆蓋該連接電極。
  3. 如請求項1之半導體裝置，其中該磁性材料含有選自Fe、Co及Ni之至少一者。
  4. 如請求項1之半導體裝置，其中包含該磁性材料之複數個對準標記係形成在該半導體裝置上之兩個或兩個以上位置處。
  5. 如請求項1之半導體裝置，其中該至少一對準標記自該半導體元件之一表面之一高度等於或小於該連接電極之一高度且等於或大於在其上形成該連接電極之一表面之一高度。
  6. 如請求項1之半導體裝置，其中該底填充樹脂層覆蓋由該磁性材料製成之該至少一對準標記之一側表面及一上 表面。
  7. 如請求項1之半導體裝置，其中該底填充樹脂之厚度係等於或小於該連接電極之高度。
  8. 一種電子設備，其包括：一光學系統；一固態成像裝置，其中該固態成像裝置經組態以自該光學系統接收光，該固態成像裝置包含：一半導體元件；一連接電極，其形成在該半導體元件上；及複數個對準標記，其等形成在該半導體元件上，其中該複數個對準標記之至少一對準標記係由一磁性材料製成；一底填充樹脂層，其中該底填充樹脂層之厚度係大於由該磁性材料製成之該至少一對準標記之高度，且其中該底填充樹脂層覆蓋由該磁性材料製成之該至少一對準標記；一驅動電路，其經組態以驅動該固態成像裝置；及一信號處理電路，其經組態以處理該固態成像裝置之一輸出。
  9. 如請求項8之電子設備，其中該底填充樹脂層經形成以覆蓋該連接電極。
  10. 如請求項8之電子設備，其中該磁性材料含有選自Fe、Co及Ni之至少一者。
  11. 如請求項8之電子設備， 其中包含該磁性材料之複數個對準標記係形成在該半導體裝置上之兩個或兩個以上位置處。
  12. 如請求項8之電子設備，其中該至少一對準標記自該半導體元件之一表面之一高度等於或小於該連接電極之一高度且等於或大於在其上形成該連接電極之一表面之一高度。
  13. 如請求項8之電子設備，其中該底填充樹脂層覆蓋由該磁性材料製成之該至少一對準標記之一側表面及一上表面。
  14. 如請求項8之電子設備，其中該底填充樹脂之厚度係等於或小於該連接電極之高度。
  15. 一種半導體裝置，其包括：一第一半導體元件；一第一連接電極，其形成在該第一半導體元件上；一第一對準標記，其等形成在該第一半導體元件上，其中該第一對準標記包含一磁性材料；一第二半導體元件；一第二連接電極，其形成在該第二半導體元件上，其中該第二連接電極接觸該第一連接電極；一第二對準標記，其等形成在該第二半導體元件上，其中該第二對準標記包含一磁性材料；一底填充樹脂層，其置於該第一對準標記及該第二對準標記之間。
  16. 如請求項15之電子設備，其中該第一對準標記之磁極性係相反於該第二對準標記之磁極性。
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