US20130199831A1 - Electromagnetic field assisted self-assembly with formation of electrical contacts - Google Patents
Electromagnetic field assisted self-assembly with formation of electrical contacts Download PDFInfo
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- US20130199831A1 US20130199831A1 US13/366,436 US201213366436A US2013199831A1 US 20130199831 A1 US20130199831 A1 US 20130199831A1 US 201213366436 A US201213366436 A US 201213366436A US 2013199831 A1 US2013199831 A1 US 2013199831A1
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/104—Using magnetic force, e.g. to align particles or for a temporary connection during processing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- Embodiments of the present invention generally relate to methods of self-assembly and apparatus for accomplishing the same.
- Self-assembly is a promising technique to overcome limitations, for example, with integrating, packaging, and/or handling individual electronic components that have critical dimensions of about 300 microns or below.
- Methods of self-assembly may include gravitational, capillary, or magnetic forces, each of which has limitations related to assembling one or more electronic components on a substrate, for example, such as aligning one or more electronic components with a binding site on the substrate.
- the inventor has provided improved methods and apparatus for self-assembly.
- Embodiments of the present invention include methods and apparatus for self-assembling a part on a substrate.
- a method of self-assembling a part on a substrate includes placing a substrate into a first fluid, the substrate including a first binding site capable of generating a first electromagnetic field and having a first shaped surface with a first droplet conformably disposed on the first shaped surface, wherein the first droplet is immiscible in the first fluid; placing a part into the first fluid, the part having a second binding site capable of generating a second electromagnetic field and having a second shaped surface with a second droplet conformably disposed on the second shaped surface, wherein the second droplet is immiscible in the first fluid; and attracting the part towards the first binding site using the first and second electromagnetic fields such that the first and second droplets solubilize with each other forming an equilibrium between an attractive force between the first and second electromagnetic fields and a repulsive force between the solubilized first and second droplets and the first fluid such that the part
- an apparatus includes a substrate having a first binding site having a first shaped surface and a first electromagnetic field generating element; and a part having a second binding opposing the first binding site, wherein the second binding site has a second shaped surface and a second electromagnetic field generating element and wherein the first shaped surface is aligned with the second shaped surface.
- FIGS. 1A-B depict an apparatus in accordance with some embodiments of the present invention.
- FIG. 2 depicts a flow chart for a method for self-assembling a part on a substrate in accordance with some embodiments of the present invention.
- FIGS. 3A-D depict the stages of fabrication for self-assembling a part on a substrate in accordance with some embodiments of the present invention.
- Embodiments of the present invention comprise methods and apparatus for self-assembling a part on a substrate.
- the inventive methods and apparatus advantageously facilitate the self-assembly of the part onto the substrate such that the part and the substrate are aligned during the self-assembly process.
- FIG. 1A depicts a side schematic view of an article 100 in accordance with some embodiments of the present invention.
- the article 100 includes a part 101 and a substrate 102 .
- the substrate 102 may include one or more of silicon (Si), glass, plastic, or other suitable substrate materials.
- the substrate 102 includes a first binding site 104 .
- an electrically conductive layer 105 may be disposed between the substrate 102 and the first binding site 104 .
- the electrically conductive layer 105 may include one or more of gold (Au), copper (Cu), aluminum (Al), or other suitable conductive materials.
- the first binding site 104 may include a first electromagnetic field generating element 106 and a first layer 108 .
- the first magnetic field generating element 106 may include one or more of a polarized permanent magnet, a hard magnet, a polarized permanent electrostatic material, an electrode providing an electro static field, or an electromagnet.
- the first magnetic field generating element 106 may be covered by the first layer 108 , for example, to provide a surface suitable for attachment of a self-assembled monolayer, as described below.
- the first layer 108 may be formed of one or more of gold (Au), copper (Cu), silicon dioxide (SiO 2 ), or the like.
- the first layer 108 may include a first shaped surface 110 , where the first shaped surface 110 may be utilized to promote alignment of the part 101 with the substrate 102 as discussed below.
- the first shaped surface 110 may include any suitable shape not having the same radial distance in every direction from a central axis passing through the surface 110 .
- one such suitable shape may include a triangle.
- an unsuitable shape may include a circle.
- the first shaped surface 110 may include a self-assembled monolayer or any suitable surface for making the first shaped surface 110 one of hydrophobic or hydrophilic.
- the part 101 may comprise one or more of transistors, optoelectronic devices, sensors, or other suitable devices or the like.
- the part 101 may include a second binding site 112 opposing the first binding site 104 .
- the second binding site 112 may include a second electromagnetic field generating element 114 and a second layer 116 .
- the second binding site 112 may be substantially similar to the first binding site 104 as described above.
- the second magnetic field generating element 114 may include one or more of a polarized permanent magnet, a hard magnet, a polarized permanent electrostatic material, or a material which is highly permeable to the electromagnetic field lines emanating from the first electromagnetic field generator, such as permalloy, nickel-iron (Ni—Fe), or the like.
- the second magnetic field generating element 114 may be covered by the second layer 116 , for example, to provide a surface suitable for attachment of a self-assembled monolayer, as described below.
- the second layer 116 may be formed of one or more of gold (Au), copper (Cu), silicon dioxide (SiO 2 ), or the like.
- the second layer 116 may include a second shaped surface 118 , where the second shaped surface 118 may be utilized to promote alignment of the part 101 with the substrate 102 as discussed below.
- the second shaped surface 118 may include any suitable shape not having the same radial distance in every direction from a central axis passing through the surface 110 . For example, as illustrated in FIG.
- one such suitable shape may include a triangle.
- an unsuitable shape may include a circle.
- the second shaped surface 118 may include a self-assembled monolayer or any suitable surface for making the second shaped surface 118 one of hydrophobic or hydrophilic for use in the method 200 as discussed below.
- the first shaped surface 110 may be aligned with the second shaped surface 118 .
- the second shaped surface 118 is drawn as slightly larger in area than the first shaped surface 110 .
- the article 100 may include a plurality of electrical connections 120 disposed about the first and second binding sites 104 , 112 , wherein each electrical connection 120 provides an electrical pathway between the substrate 102 and the part 101 .
- each electrical connection 120 may include a first metal layer 122 contacting the substrate 102 , for example via the electrically conductive layer 105 , as shown, or alternatively directly to the substrate 102 (not shown).
- Each electrical connection 120 may include a second metal layer 124 contacting the part 101 and a solder layer 126 disposed between the first and second metal layers 122 , 124 .
- the first and second metal layers may be formed from one or more of gold (Au), copper (Cu), nickel (Ni), or other suitable conducting materials.
- the solder layer 126 may be formed from one or more of tin-lead (Sn—Pb), tin-bismuth (Sn—Bi), tin (Sn), or other suitable solder materials.
- FIG. 2 depicts a flow chart of a method 200 for self-assembling a part on a substrate in accordance with some embodiments of the present invention.
- the method 220 may be utilized to form the article 100 as illustrated in FIGS. 1A-B by self-assembling the part 101 to the substrate 102 .
- the stages of fabrication of the self-assembly process, or method 200 are respectively depicted in FIGS. 3A-D .
- the method 200 begins at 202 , by placing the substrate 102 in a first fluid 300 .
- the substrate 102 may include the electrically conductive layer 105 , the first binding site 104 , the plurality of first metal layers 122 and the plurality of solder layers 126 disposed thereon when the substrate is placed in the first fluid 300 .
- the first fluid 300 may include one or more of water (H 2 O), ethylene glycol, glycerol, or the like.
- a first droplet 302 of a second fluid may be conformably disposed on the first shaped surface 110 .
- the second fluid may be immiscible in the first fluid 300 .
- the second fluid may be, for example, one or more of hexane (C 6 H 12 ), hexadecane (C 16 H 32 ), or any suitable fluid which is immiscible in water.
- the first droplet 302 may be formed on a self-assembled monolayer included on the first shaped surface 110 or on any suitable surface which permits the second fluid to wet the first shaped surface 110 to form the first droplet 302 .
- the substrate 102 may be placed into the second fluid prior to placing the substrate into the first fluid 300 .
- the second fluid may wet the first shaped surface 110 while not wetting other surfaces of the substrate 102 .
- the second fluid 304 may be disposed above the first fluid 300 and the substrate 102 may passed through the second fluid 304 to enter the first fluid 300 as illustrated in FIG. 3B .
- an exemplary self assembled monolayer is illustrated in FIG. 3B .
- the self-assembled monolayer 306 may be disposed on the first shaped surface 110 and may comprise a plurality of molecules 308 , each molecule may include a hydrophobic group 310 that contacts the second fluid 304 .
- a hydrophilic group may be used.
- the part 101 may be placed into the first fluid as illustrated in FIG. 3A .
- the part 101 may include the second binding site 112 and the plurality of second metal layers 124 as illustrated in FIG. 3A .
- the part 101 may include a second droplet 312 conformably disposed on the second shaped surface 118 , wherein the second droplet is immiscible in the first fluid 300 .
- the second droplet 312 may be formed from one or more of the second fluids as discussed above with respect to the first droplet 302 .
- the first droplet 302 and the second droplet 312 may be made from the same fluid or from different fluids.
- the part 101 may be placed into the second fluid prior to the placing the part 101 in the first fluid to wet the second shaped surface 118 of the second binding site 112 to form the second droplet 312 on the second shaped surface 116 .
- the second fluid 304 may be disposed above the first fluid 300 and the part 101 may be passed through the second fluid 304 prior to enter the first fluid 300 , similar to embodiments discussed above at 202 and illustrated in FIG. 3B .
- Embodiments of a self assembled monolayer discussed above at 202 such as the exemplary self assembled monolayer 306 , may be applied to the second shaped surface 116 and used to wet the second shaped surface 118 to form the second droplet 312 .
- the part 101 may be attracted towards the first binding site 114 as illustrated in FIGS. 3A , 3 C-D.
- the first and second electromagnetic field generating elements 106 , 114 may be used to attract the part 101 to the substrate 102 such that the first and second droplets 302 , 312 solubilize with each other as illustrated in FIG. 3C .
- first and second droplets 302 , 312 solubilize, an equilibrium may be formed between an attractive force resulting from the first and second electromagnetic field generating elements 106 , 114 and a repulsive force between the solubilized first and second droplets 302 , 312 and the first fluid 300 such that the part 101 is free to rotate about the first binding site 114 as shown in FIG. 3C .
- the solubilized first and second droplets 302 , 312 may act as a lubricant to aid rotation and prevent the part 101 from getting stuck in a misaligned orientation.
- the repulsive force may be minimized by minimizing an exposed surface area 314 of the solubilized first and second droplets 302 , 312 with respect to the first fluid 300 .
- the minimization of the repulsive force may occur when the first and second shaped surfaces 110 , 116 rotate into an alignment (such as an alignment as illustrated in FIG. 1B ) causing the part 101 to aligned with the first binding site 114 .
- the part 101 may be considered aligned when the plurality second metal layers 124 disposed on the part 101 are aligned with the corresponding plurality of solder layers 126 disposed on the substrate 102 .
- first and second shaped surfaces 110 , 118 may be selected such that only by their alignment may the repulsive force be minimized.
- first droplet 302 may also preferentially wet the surface 118 , resulting in the same combined droplet 302 , 312 depicted in FIG. 3C and leading to the same functions described above.
- the part 101 may be contacted with the substrate 102 such that the plurality of first metal layers 124 contact the corresponding plurality of solder layers 126 .
- the solubilized first and second droplets 302 , 312 may be removed such that the attractive force between the first and second electromagnetic field generating elements 106 , 114 pulls the first metal layers 124 and corresponding solder layers 126 together.
- the solubilized first and second droplets 302 , 312 may be removed by adding a third fluid (not shown) to the first fluid 300 , where the third fluid may be soluble in both the first and second fluids.
- exemplary third fluids may include one or more of ethanol (CH 3 CH 2 OH), acetone ((CH 3 ) 2 CO), methanol (CH 3 OH), or the like.
- the third fluid may dissolve the solubilized first and second droplets 302 , 312 as illustrated in FIG. 3D such that the plurality of first metal layers 124 contact the corresponding plurality of solder layers 126 .
- the solder layers 126 may be heated to form the electrical connections 120 .
- the substrate 102 and part 101 may be globally heated or the solder layers 126 may be locally heated.
- the substrate 102 including the aligned part 101 may be removed from the first fluid 300 .
- the substrate 102 and part 101 may be removed, for example, such that higher temperatures than the boiling point of the first fluid 300 may be used to melt the solder layers 126 .
- the substrate 102 may be heated to melt the solder layers 126 such that the electrical connections 120 are formed.
- the substrate 102 and part 101 may be heated under an inert atmosphere or the like to melt the solder layers 126 .
- the first fluid 300 may be exchanged with a fourth fluid having a higher boiling point than the first fluid 300 .
- Exemplary fourth fluids may include glycerol, ethylene glycol, ionic liquids, or the like.
- the substrate 102 may be heated in the fourth fluid to melt the solder layers 126 to form the electrical connections 120 .
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- Manufacturing & Machinery (AREA)
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Abstract
A method and apparatus for self-assembling a part on a substrate are disclosed herein. In some embodiments, a method includes placing a substrate having a first binding site capable of generating a first magnetic field and having a first shaped surface with a first droplet conformably disposed thereon into a first fluid; placing a part having a second binding site capable of generating a second magnetic field and having a second shaped surface with a second droplet conformably disposed on the second shaped surface into the first fluid; and attracting the part towards the first binding site such that an equilibrium is formed between an attractive force and a repulsive force such that the part is free to rotate about the first binding site to minimize the repulsive force when the first and second shaped surfaces rotate into an alignment causing the part to aligned with the first binding site.
Description
- Governmental Interest—The invention described herein may be manufactured, used and licensed by or for the U.S. Government.
- Embodiments of the present invention generally relate to methods of self-assembly and apparatus for accomplishing the same.
- Self-assembly is a promising technique to overcome limitations, for example, with integrating, packaging, and/or handling individual electronic components that have critical dimensions of about 300 microns or below. Methods of self-assembly may include gravitational, capillary, or magnetic forces, each of which has limitations related to assembling one or more electronic components on a substrate, for example, such as aligning one or more electronic components with a binding site on the substrate.
- The inventor has provided improved methods and apparatus for self-assembly.
- Embodiments of the present invention include methods and apparatus for self-assembling a part on a substrate. In some embodiments, a method of self-assembling a part on a substrate includes placing a substrate into a first fluid, the substrate including a first binding site capable of generating a first electromagnetic field and having a first shaped surface with a first droplet conformably disposed on the first shaped surface, wherein the first droplet is immiscible in the first fluid; placing a part into the first fluid, the part having a second binding site capable of generating a second electromagnetic field and having a second shaped surface with a second droplet conformably disposed on the second shaped surface, wherein the second droplet is immiscible in the first fluid; and attracting the part towards the first binding site using the first and second electromagnetic fields such that the first and second droplets solubilize with each other forming an equilibrium between an attractive force between the first and second electromagnetic fields and a repulsive force between the solubilized first and second droplets and the first fluid such that the part is free to rotate about the first binding site to minimize the repulsive force by minimizing an exposed surface area of the solubilized first and second droplets with respect to the first fluid when the first and second shaped surfaces rotate into an alignment causing the part to aligned with the first binding site.
- In some embodiments, an apparatus includes a substrate having a first binding site having a first shaped surface and a first electromagnetic field generating element; and a part having a second binding opposing the first binding site, wherein the second binding site has a second shaped surface and a second electromagnetic field generating element and wherein the first shaped surface is aligned with the second shaped surface.
- Other and further embodiments of the present invention are discussed below.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIGS. 1A-B depict an apparatus in accordance with some embodiments of the present invention. -
FIG. 2 depicts a flow chart for a method for self-assembling a part on a substrate in accordance with some embodiments of the present invention. -
FIGS. 3A-D depict the stages of fabrication for self-assembling a part on a substrate in accordance with some embodiments of the present invention. - Embodiments of the present invention comprise methods and apparatus for self-assembling a part on a substrate. The inventive methods and apparatus advantageously facilitate the self-assembly of the part onto the substrate such that the part and the substrate are aligned during the self-assembly process.
-
FIG. 1A depicts a side schematic view of anarticle 100 in accordance with some embodiments of the present invention. Thearticle 100 includes apart 101 and asubstrate 102. For example, thesubstrate 102 may include one or more of silicon (Si), glass, plastic, or other suitable substrate materials. Thesubstrate 102 includes a firstbinding site 104. As illustrated inFIG. 1 , an electricallyconductive layer 105 may be disposed between thesubstrate 102 and the firstbinding site 104. For example, the electricallyconductive layer 105 may include one or more of gold (Au), copper (Cu), aluminum (Al), or other suitable conductive materials. - The first
binding site 104 may include a first electromagneticfield generating element 106 and afirst layer 108. For example, the first magneticfield generating element 106 may include one or more of a polarized permanent magnet, a hard magnet, a polarized permanent electrostatic material, an electrode providing an electro static field, or an electromagnet. The first magneticfield generating element 106 may be covered by thefirst layer 108, for example, to provide a surface suitable for attachment of a self-assembled monolayer, as described below. Thefirst layer 108 may be formed of one or more of gold (Au), copper (Cu), silicon dioxide (SiO2), or the like. Thefirst layer 108 may include a firstshaped surface 110, where the firstshaped surface 110 may be utilized to promote alignment of thepart 101 with thesubstrate 102 as discussed below. For example, the firstshaped surface 110 may include any suitable shape not having the same radial distance in every direction from a central axis passing through thesurface 110. For example, as illustrated inFIG. 1B , one such suitable shape may include a triangle. For example, an unsuitable shape may include a circle. The firstshaped surface 110 may include a self-assembled monolayer or any suitable surface for making the firstshaped surface 110 one of hydrophobic or hydrophilic. - The
part 101 may comprise one or more of transistors, optoelectronic devices, sensors, or other suitable devices or the like. Thepart 101 may include a secondbinding site 112 opposing the firstbinding site 104. The secondbinding site 112 may include a second electromagneticfield generating element 114 and asecond layer 116. The secondbinding site 112 may be substantially similar to the firstbinding site 104 as described above. For example, the second magneticfield generating element 114 may include one or more of a polarized permanent magnet, a hard magnet, a polarized permanent electrostatic material, or a material which is highly permeable to the electromagnetic field lines emanating from the first electromagnetic field generator, such as permalloy, nickel-iron (Ni—Fe), or the like. The second magneticfield generating element 114 may be covered by thesecond layer 116, for example, to provide a surface suitable for attachment of a self-assembled monolayer, as described below. Thesecond layer 116 may be formed of one or more of gold (Au), copper (Cu), silicon dioxide (SiO2), or the like. Thesecond layer 116 may include a secondshaped surface 118, where the secondshaped surface 118 may be utilized to promote alignment of thepart 101 with thesubstrate 102 as discussed below. For example, as discussed above with respect to the firstshaped surface 110, the secondshaped surface 118 may include any suitable shape not having the same radial distance in every direction from a central axis passing through thesurface 110. For example, as illustrated inFIG. 1B , one such suitable shape may include a triangle. For example, an unsuitable shape may include a circle. The secondshaped surface 118 may include a self-assembled monolayer or any suitable surface for making the secondshaped surface 118 one of hydrophobic or hydrophilic for use in themethod 200 as discussed below. - As illustrated in
FIG. 18 , the firstshaped surface 110 may be aligned with the secondshaped surface 118. For illustrative purposes, the secondshaped surface 118 is drawn as slightly larger in area than the firstshaped surface 110. However, this is merely illustrative, and in practice, the first and secondshaped surfaces - The
article 100 may include a plurality ofelectrical connections 120 disposed about the first and secondbinding sites electrical connection 120 provides an electrical pathway between thesubstrate 102 and thepart 101. For example, eachelectrical connection 120 may include afirst metal layer 122 contacting thesubstrate 102, for example via the electricallyconductive layer 105, as shown, or alternatively directly to the substrate 102 (not shown). Eachelectrical connection 120 may include asecond metal layer 124 contacting thepart 101 and asolder layer 126 disposed between the first andsecond metal layers solder layer 126 may be formed from one or more of tin-lead (Sn—Pb), tin-bismuth (Sn—Bi), tin (Sn), or other suitable solder materials. -
FIG. 2 depicts a flow chart of amethod 200 for self-assembling a part on a substrate in accordance with some embodiments of the present invention. For example, the method 220 may be utilized to form thearticle 100 as illustrated inFIGS. 1A-B by self-assembling thepart 101 to thesubstrate 102. The stages of fabrication of the self-assembly process, ormethod 200, are respectively depicted inFIGS. 3A-D . - The
method 200 begins at 202, by placing thesubstrate 102 in afirst fluid 300. For example, as illustrated inFIG. 3A , thesubstrate 102 may include the electricallyconductive layer 105, the firstbinding site 104, the plurality offirst metal layers 122 and the plurality ofsolder layers 126 disposed thereon when the substrate is placed in thefirst fluid 300. For example, thefirst fluid 300 may include one or more of water (H2O), ethylene glycol, glycerol, or the like. Afirst droplet 302 of a second fluid may be conformably disposed on the first shapedsurface 110. The second fluid may be immiscible in thefirst fluid 300. For example, the second fluid may be, for example, one or more of hexane (C6H12), hexadecane (C16H32), or any suitable fluid which is immiscible in water. In some embodiments, thefirst droplet 302 may be formed on a self-assembled monolayer included on the first shapedsurface 110 or on any suitable surface which permits the second fluid to wet the first shapedsurface 110 to form thefirst droplet 302. - In some embodiments, to form the
first droplet 302, thesubstrate 102 may be placed into the second fluid prior to placing the substrate into thefirst fluid 300. For example, the second fluid may wet the first shapedsurface 110 while not wetting other surfaces of thesubstrate 102. Alternatively, thesecond fluid 304 may be disposed above thefirst fluid 300 and thesubstrate 102 may passed through thesecond fluid 304 to enter thefirst fluid 300 as illustrated inFIG. 3B . Further, an exemplary self assembled monolayer is illustrated inFIG. 3B . For example, as shown, the self-assembledmonolayer 306 may be disposed on the first shapedsurface 110 and may comprise a plurality ofmolecules 308, each molecule may include ahydrophobic group 310 that contacts thesecond fluid 304. Alternatively, depending on the identity of the first and second fluids, a hydrophilic group may be used. - At 204, the
part 101 may be placed into the first fluid as illustrated inFIG. 3A . For example, thepart 101 may include the secondbinding site 112 and the plurality ofsecond metal layers 124 as illustrated inFIG. 3A . Thepart 101 may include asecond droplet 312 conformably disposed on the second shapedsurface 118, wherein the second droplet is immiscible in thefirst fluid 300. For example, thesecond droplet 312 may be formed from one or more of the second fluids as discussed above with respect to thefirst droplet 302. Thefirst droplet 302 and thesecond droplet 312 may be made from the same fluid or from different fluids. Similar to embodiments discussed above at 202, thepart 101 may be placed into the second fluid prior to the placing thepart 101 in the first fluid to wet the second shapedsurface 118 of the secondbinding site 112 to form thesecond droplet 312 on the second shapedsurface 116. Alternatively, thesecond fluid 304 may be disposed above thefirst fluid 300 and thepart 101 may be passed through thesecond fluid 304 prior to enter thefirst fluid 300, similar to embodiments discussed above at 202 and illustrated inFIG. 3B . Embodiments of a self assembled monolayer discussed above at 202, such as the exemplary self assembledmonolayer 306, may be applied to the second shapedsurface 116 and used to wet the second shapedsurface 118 to form thesecond droplet 312. - At 206, the
part 101 may be attracted towards the firstbinding site 114 as illustrated inFIGS. 3A , 3C-D. For example, the first and second electromagneticfield generating elements part 101 to thesubstrate 102 such that the first andsecond droplets FIG. 3C . For example, as the first andsecond droplets field generating elements second droplets first fluid 300 such that thepart 101 is free to rotate about the firstbinding site 114 as shown inFIG. 3C . For example, the solubilized first andsecond droplets part 101 from getting stuck in a misaligned orientation. The repulsive force may be minimized by minimizing an exposedsurface area 314 of the solubilized first andsecond droplets first fluid 300. The minimization of the repulsive force may occur when the first and second shapedsurfaces FIG. 1B ) causing thepart 101 to aligned with the firstbinding site 114. For example, thepart 101 may be considered aligned when the pluralitysecond metal layers 124 disposed on thepart 101 are aligned with the corresponding plurality ofsolder layers 126 disposed on thesubstrate 102. Further, the shape of the first and second shapedsurfaces first droplet 302 may also preferentially wet thesurface 118, resulting in the same combineddroplet FIG. 3C and leading to the same functions described above. - Once the
part 101 is aligned with thesubstrate 102, thepart 101 may be contacted with thesubstrate 102 such that the plurality offirst metal layers 124 contact the corresponding plurality of solder layers 126. For example, to contact thepart 101 with thesubstrate 102, the solubilized first andsecond droplets field generating elements first metal layers 124 and corresponding solder layers 126 together. - In some embodiments, the solubilized first and
second droplets first fluid 300, where the third fluid may be soluble in both the first and second fluids. Exemplary third fluids may include one or more of ethanol (CH3CH2OH), acetone ((CH3)2CO), methanol (CH3OH), or the like. For example, the third fluid may dissolve the solubilized first andsecond droplets FIG. 3D such that the plurality offirst metal layers 124 contact the corresponding plurality of solder layers 126. Once thepart 101 is aligned with thesubstrate 102 and the solubilized first andsecond droplets electrical connections 120. For example, thesubstrate 102 andpart 101 may be globally heated or the solder layers 126 may be locally heated. In some embodiments, thesubstrate 102 including the alignedpart 101 may be removed from thefirst fluid 300. In some embodiments, thesubstrate 102 andpart 101 may be removed, for example, such that higher temperatures than the boiling point of thefirst fluid 300 may be used to melt the solder layers 126. Thesubstrate 102 may be heated to melt the solder layers 126 such that theelectrical connections 120 are formed. For example, thesubstrate 102 andpart 101 may be heated under an inert atmosphere or the like to melt the solder layers 126. Alternatively, thefirst fluid 300 may be exchanged with a fourth fluid having a higher boiling point than thefirst fluid 300. Exemplary fourth fluids may include glycerol, ethylene glycol, ionic liquids, or the like. Thesubstrate 102 may be heated in the fourth fluid to melt the solder layers 126 to form theelectrical connections 120. - While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof.
Claims (20)
1. A method of self-assembling a part on a substrate, comprising:
placing a substrate into a first fluid, the substrate including a first binding site capable of generating a first electromagnetic field and having a first shaped surface with a first droplet conformably disposed on the first shaped surface, wherein the second fluid is immiscible in the first fluid;
placing a part into the first fluid, the part having a second binding site capable of generating a second electromagnetic field and having a second shaped surface with a second droplet conformably disposed on the second shaped surface, wherein the second droplet is immiscible in the first fluid; and
attracting the part towards the first binding site using the first and second electromagnetic fields such that the first and second droplets solubilize with each other forming an equilibrium between an attractive force between the first and second electromagnetic fields and a repulsive force between the solubilized first and second droplets and the first fluid such that the part is free to rotate about the first binding site to minimize the repulsive force by minimizing an exposed surface area of the solubilized first and second droplets with respect to the first fluid when the first and second shaped surfaces rotate into an alignment causing the part to aligned with the first binding site.
2. The method of claim 1 , further comprising:
placing the substrate into a second fluid prior to placing the substrate into the first fluid, wherein the second fluid is immiscible in the first fluid and wherein the second fluid wets the first shaped surface to form the first droplet on the first shaped surface.
3. The method of claim 2 , wherein the second fluid is disposed above the first fluid and wherein the substrate is passed through the second fluid to enter the first fluid.
4. The method of claim 2 , wherein the first shaped surface includes a self-assembled monolayer that causes the second fluid to wet the first shaped surface.
5. The method of claim 4 , wherein the self-assembled monolayer comprises a plurality of molecules, each molecule including a hydrophobic group that contacts the second fluid.
6. The method of claim 1 , further comprising:
placing the part into a second fluid prior to placing the part into the first fluid, wherein the second fluid is immiscible in the first fluid and wherein the second fluid wets the second shaped surface to form the second droplet on the second shaped surface.
7. The method of claim 6 , wherein the second fluid is disposed above the first fluid and wherein the part is passed through the second fluid to enter the first fluid.
8. The method of claim 6 , wherein the second shaped surface include a self-assembled monolayer that causes the second fluid to wet the second shaped surface.
9. The method of claim 8 , wherein the self-assembled monolayer comprises a plurality of molecules, each molecule including a hydrophobic group that contacts the second fluid.
10. The method of claim 1 , wherein the first and second droplets comprise a second fluid, and further comprising:
dissolving the solubilized first and second droplets in a third fluid added to the first fluid after the part is aligned, wherein the third fluid is soluble in both the first and second fluids.
11. The method of claim 10 , further comprises:
contacting a plurality of solder layers disposed about the first binding site with corresponding plurality of second metal layers disposed about the second binding site by dissolving the solubilized first and second droplets.
12. The method of claim 11 , wherein the plurality of solder layers are disposed on a plurality of first metal layers disposed about the first binding site.
13. The method of claim 11 , further comprising:
removing the substrate including the aligned part from the first fluid; and
heating the substrate to melt the solder layers such that an electrical connection is formed between the plurality of second metal layers and a corresponding plurality of first metal layers disposed about the first binding site on the substrate.
14. The method of claim 11 , further comprising:
exchanging the first fluid with a fourth fluid having a higher boiling point than the first fluid; and
heating the substrate in the fourth fluid to melt the solder layers such that an electrical connection is formed between the plurality of second metal layers and a corresponding plurality of first metal layers disposed about the first binding site on the substrate.
15. The method of 1, further comprising:
generating the first electromagnetic field using one or more of a polarized permanent magnet, a hard magnet, a polarized permanent electrostatic material, an electrode providing an electro static field, or an electromagnet.
16. The method of claim 1 , further comprising:
generating the second electromagnetic field using one or more of a polarized permanent magnet, a hard magnet, a polarized permanent electrostatic material, or a material which is highly permeable to the electromagnetic field lines emanating from the first electromagnetic field generator.
17. An article, comprising:
a substrate having a first binding site having a first shaped surface and a first electromagnetic field generating element;
a part having a second binding opposing the first binding site, wherein the second binding site has a second shaped surface and a second electromagnetic field generating element and wherein the first shaped surface is aligned with the second shaped surface.
18. The article of claim 17 , further comprising:
a plurality of electrical connections disposed about the first and second binding sites, wherein each electrical connection provides an electrical pathway between the substrate and the part.
19. The article of claim 18 , wherein each electrical connection further comprises:
a first metal layer contacting the substrate;
a second metal layer contacting the part; and
a solder layer disposed between the first and second metal layers.
20. The article of claim 17 , wherein the first and second shaped surfaces further comprise:
a self assembled monolayer.
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US13/366,436 US20130199831A1 (en) | 2012-02-06 | 2012-02-06 | Electromagnetic field assisted self-assembly with formation of electrical contacts |
US14/497,377 US9137935B2 (en) | 2012-02-06 | 2014-09-26 | Electromagnetic field assisted self-assembly with formation of electrical contacts |
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US13/366,436 US20130199831A1 (en) | 2012-02-06 | 2012-02-06 | Electromagnetic field assisted self-assembly with formation of electrical contacts |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150048148A1 (en) * | 2012-02-06 | 2015-02-19 | The United States Of America As Represented By The Secretary Of The Army | Electromagnetic Field Assisted Self-Assembly With Formation Of Electrical Contacts |
US20150179605A1 (en) * | 2013-12-19 | 2015-06-25 | Imec Vzw | Method for Aligning Micro-Electronic Components |
WO2017083010A1 (en) * | 2015-11-14 | 2017-05-18 | Intel Corporation | Magnetic alignment for flip chip microelectronic devices |
DE102017113094A1 (en) * | 2017-06-14 | 2018-12-20 | Osram Opto Semiconductors Gmbh | Method for self-aligned loading of a connection carrier with a component, device and optoelectronic component |
US10769546B1 (en) * | 2015-04-27 | 2020-09-08 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafer and methods for making the same |
US20210090925A1 (en) * | 2019-09-19 | 2021-03-25 | Lg Electronics Inc. | Device for self-assembling semiconductor light-emitting diodes |
US11121301B1 (en) | 2017-06-19 | 2021-09-14 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafers and their methods of manufacture |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105607323A (en) * | 2016-01-04 | 2016-05-25 | 京东方科技集团股份有限公司 | Display panel and display device |
TWI674682B (en) * | 2016-09-07 | 2019-10-11 | 優顯科技股份有限公司 | Optoelectronic semiconductor device and manufacturing method thereof |
US10748792B2 (en) * | 2017-10-13 | 2020-08-18 | Maven Optronics Co., Ltd. | Method and system for mass arrangement of micro-component devices |
EP3637963B1 (en) * | 2018-10-12 | 2024-02-07 | AT&S Austria Technologie & Systemtechnik Aktiengesellschaft | Component carrier structures connected by cooperating magnet structures |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6404044B2 (en) * | 1997-03-10 | 2002-06-11 | Micron Technology, Inc. | Semiconductor package with stacked substrates and multiple semiconductor dice |
US6633005B2 (en) * | 2001-10-22 | 2003-10-14 | Micro Mobio Corporation | Multilayer RF amplifier module |
US6858943B1 (en) * | 2003-03-25 | 2005-02-22 | Sandia Corporation | Release resistant electrical interconnections for MEMS devices |
US20050173711A1 (en) * | 2000-12-07 | 2005-08-11 | Patel Satyadev R. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
US20070052045A1 (en) * | 2005-08-31 | 2007-03-08 | Arora William J | Thin membrane alignment method using patterned nanomagnets |
US20080218299A1 (en) * | 2005-11-28 | 2008-09-11 | David Patrick Arnold | Method and Structure for Magnetically-Directed, Self-Assembly of Three-Dimensional Structures |
US7737552B2 (en) * | 2004-07-01 | 2010-06-15 | Imec | Device having a bonding structure for two elements |
US20110179640A1 (en) * | 2010-01-25 | 2011-07-28 | University Of Florida Research Foundation, Inc. | Enhanced magnetic self-assembly using integrated micromagnets |
US8350639B2 (en) * | 2009-08-26 | 2013-01-08 | Qualcomm Incorporated | Transformer signal coupling for flip-chip integration |
US8735871B2 (en) * | 2008-04-03 | 2014-05-27 | Cambridge Display Technology Limited | Organic thin film transistors |
Family Cites Families (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2991347A (en) * | 1959-12-14 | 1961-07-04 | Hoffman Electronics Corp | Magnetic jig for alloying |
GB1138401A (en) * | 1965-05-06 | 1969-01-01 | Mallory & Co Inc P R | Bonding |
US3855693A (en) * | 1973-04-18 | 1974-12-24 | Honeywell Inf Systems | Method for assembling microelectronic apparatus |
US3887997A (en) * | 1973-11-09 | 1975-06-10 | Gen Motors Corp | Magnetic alignment for semiconductor device bonding |
JPS6059105B2 (en) * | 1982-03-29 | 1985-12-23 | 富士通株式会社 | Manufacturing method of electrostatic adsorption device |
US5005757A (en) * | 1990-05-14 | 1991-04-09 | Grumman Aerospace Corporation | Bonded segmented cylindrical magnet assembly |
JP2762792B2 (en) * | 1991-08-30 | 1998-06-04 | 日本電気株式会社 | Optical semiconductor device |
US5355577A (en) * | 1992-06-23 | 1994-10-18 | Cohn Michael B | Method and apparatus for the assembly of microfabricated devices |
US5346775A (en) * | 1993-02-22 | 1994-09-13 | At&T Laboratories | Article comprising solder with improved mechanical properties |
US5545291A (en) | 1993-12-17 | 1996-08-13 | The Regents Of The University Of California | Method for fabricating self-assembling microstructures |
US5824186A (en) | 1993-12-17 | 1998-10-20 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
US6864570B2 (en) | 1993-12-17 | 2005-03-08 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
US5539153A (en) * | 1994-08-08 | 1996-07-23 | Hewlett-Packard Company | Method of bumping substrates by contained paste deposition |
US6011307A (en) * | 1997-08-12 | 2000-01-04 | Micron Technology, Inc. | Anisotropic conductive interconnect material for electronic devices, method of use and resulting product |
US6239385B1 (en) * | 1998-02-27 | 2001-05-29 | Agilent Technologies, Inc. | Surface mountable coaxial solder interconnect and method |
US6251765B1 (en) * | 1998-07-10 | 2001-06-26 | Ball Semiconductor, Inc. | Manufacturing metal dip solder bumps for semiconductor devices |
JP3690278B2 (en) * | 1998-12-07 | 2005-08-31 | 株式会社日立製作所 | Composite materials and their uses |
US5986348A (en) * | 1999-03-15 | 1999-11-16 | Ball Semiconductor Inc. | Magnetic alignment system for bumps on an integrated circuit device |
DE19912470B4 (en) * | 1999-03-19 | 2005-06-02 | Vacuumschmelze Gmbh | Composite part and method for its production |
JP3831179B2 (en) * | 1999-06-29 | 2006-10-11 | 株式会社東芝 | Semiconductor device manufacturing method and pattern forming method |
US6536106B1 (en) | 1999-06-30 | 2003-03-25 | The Penn State Research Foundation | Electric field assisted assembly process |
US6527964B1 (en) | 1999-11-02 | 2003-03-04 | Alien Technology Corporation | Methods and apparatuses for improved flow in performing fluidic self assembly |
AU2427301A (en) | 1999-12-01 | 2001-06-12 | Regents Of The University Of California, The | Electric-field-assisted fluidic assembly of inorganic and organic materials, molecules and like small things including living cells |
US6186392B1 (en) * | 2000-01-21 | 2001-02-13 | Micron Technology, Inc. | Method and system for forming contacts on a semiconductor component by aligning and attaching ferromagnetic balls |
US6687987B2 (en) | 2000-06-06 | 2004-02-10 | The Penn State Research Foundation | Electro-fluidic assembly process for integration of electronic devices onto a substrate |
US6780696B1 (en) | 2000-09-12 | 2004-08-24 | Alien Technology Corporation | Method and apparatus for self-assembly of functional blocks on a substrate facilitated by electrode pairs |
US7018575B2 (en) | 2001-09-28 | 2006-03-28 | Hrl Laboratories, Llc | Method for assembly of complementary-shaped receptacle site and device microstructures |
US7253091B2 (en) | 2001-09-28 | 2007-08-07 | Hrl Laboratories, Llc | Process for assembling three-dimensional systems on a chip and structure thus obtained |
US6974604B2 (en) | 2001-09-28 | 2005-12-13 | Hrl Laboratories, Llc | Method of self-latching for adhesion during self-assembly of electronic or optical components |
EP1615263A4 (en) * | 2003-02-05 | 2006-10-18 | Senju Metal Industry Co | Method for interconnecting terminals and method for mounting semiconductor device |
US7223635B1 (en) | 2003-07-25 | 2007-05-29 | Hrl Laboratories, Llc | Oriented self-location of microstructures with alignment structures |
KR100780496B1 (en) * | 2004-03-24 | 2007-11-29 | 야마하 가부시키가이샤 | Semiconductor device, magnetic sensor, and magnetic sensor unit |
US7232704B2 (en) | 2004-03-24 | 2007-06-19 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device assembly method and semiconductor device assembly apparatus |
US7252512B2 (en) * | 2004-04-21 | 2007-08-07 | Japan Aviation Electronics Industry, Limited | Self-alignment magnetic connector reduced in size |
FR2873675B1 (en) * | 2004-07-28 | 2006-09-22 | Commissariat Energie Atomique | MICROTECHNOLOGICAL DEVICE COMPRISING MAGNETICALLY ASSEMBLED STRUCTURES AND ASSEMBLY METHOD |
JP4130668B2 (en) * | 2004-08-05 | 2008-08-06 | 富士通株式会社 | Substrate processing method |
US7251882B2 (en) * | 2004-09-03 | 2007-08-07 | Eastman Kodak Company | Method for assembling micro-components to binding sites |
US20060051517A1 (en) * | 2004-09-03 | 2006-03-09 | Eastman Kodak Company | Thermally controlled fluidic self-assembly method and support |
US7318962B2 (en) * | 2005-01-28 | 2008-01-15 | The United States Of America As Represented By The Secretary Of The Navy | Magnetically directed self-assembly of molecular electronic junctions comprising conductively coated ferromagnetic microparticles |
US7476982B2 (en) * | 2005-02-28 | 2009-01-13 | Regents Of The University Of California | Fabricated adhesive microstructures for making an electrical connection |
US7615836B2 (en) * | 2005-03-07 | 2009-11-10 | Sensormatic Electronics Corporation | Magnetic self-assembly for integrated circuit packages |
US7625780B2 (en) | 2005-03-15 | 2009-12-01 | Regents Of The University Of Minnesota | Fluidic heterogeneous microsystems assembly and packaging |
US20060234405A1 (en) * | 2005-04-13 | 2006-10-19 | Best Scott C | Semiconductor device with self-aligning contactless interface |
US7485968B2 (en) * | 2005-08-11 | 2009-02-03 | Ziptronix, Inc. | 3D IC method and device |
US7791895B2 (en) * | 2005-08-19 | 2010-09-07 | Intel Corporation | Surface mount component having magnetic layer thereon and method of forming same |
US20070231826A1 (en) * | 2005-10-19 | 2007-10-04 | General Electric Company | Article and assembly for magnetically directed self assembly |
JP5151053B2 (en) * | 2006-03-30 | 2013-02-27 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
US7611357B2 (en) * | 2006-09-15 | 2009-11-03 | Mr Board, Inc. | Magnetic component connector, circuit boards for use therewith, and kits for building and designing circuits |
US20100170086A1 (en) * | 2006-11-03 | 2010-07-08 | Agency For Science, Technology And Research | Device, unit, system and method for the magnetically-assisted assembling of chip-scale, and nano and micro-scale components onto a substrate |
JP5220769B2 (en) * | 2007-02-12 | 2013-06-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Modular electrical system |
US7584533B2 (en) * | 2007-10-10 | 2009-09-08 | National Semiconductor Corporation | Method of fabricating an inductor structure on an integrated circuit structure |
TWI471971B (en) * | 2007-10-30 | 2015-02-01 | 尼康股份有限公司 | Substrate holding member, substrate bonding apparatus, laminated substrate manufacturing apparatus, substrate bonding method, laminated substrate manufacturing method, and laminated semiconductor device manufacturing method |
JP2010129901A (en) * | 2008-11-28 | 2010-06-10 | Toshiba Corp | Electronic apparatus, electronic component, and manufacturing method |
US7868729B2 (en) * | 2009-03-03 | 2011-01-11 | Freescale Semiconductor, Inc. | Stacked device assembly with integrated coil and method of forming same |
US7969774B2 (en) * | 2009-03-10 | 2011-06-28 | Micron Technology, Inc. | Electronic devices formed of two or more substrates bonded together, electronic systems comprising electronic devices and methods of making electronic devices |
KR20110052880A (en) * | 2009-11-13 | 2011-05-19 | 삼성전자주식회사 | Flip chip package and method of manufacturing the same |
US8850695B1 (en) * | 2010-01-05 | 2014-10-07 | The Boeing Company | Printed circuit board assembly tooling |
US8361646B2 (en) * | 2010-03-15 | 2013-01-29 | Electronvault, Inc. | Modular interconnection system |
US8939347B2 (en) * | 2010-04-28 | 2015-01-27 | Intel Corporation | Magnetic intermetallic compound interconnect |
US20110278351A1 (en) * | 2010-05-11 | 2011-11-17 | Aleksandar Aleksov | Magnetic particle attachment material |
US8434668B2 (en) * | 2010-05-12 | 2013-05-07 | Intel Corporation | Magnetic attachment structure |
US8313958B2 (en) * | 2010-05-12 | 2012-11-20 | Intel Corporation | Magnetic microelectronic device attachment |
US8816807B2 (en) * | 2010-05-21 | 2014-08-26 | Purdue Research Foundation | Controlled self assembly of anisotropic conductive adhesives based on ferromagnetic particles |
CN102683311B (en) * | 2011-03-10 | 2014-12-10 | 精材科技股份有限公司 | Chip packaging body and formation method thereof |
JP2012256737A (en) * | 2011-06-09 | 2012-12-27 | Sony Corp | Semiconductor device and manufacturing method therefor |
US9257359B2 (en) * | 2011-07-22 | 2016-02-09 | International Business Machines Corporation | System and method to process horizontally aligned graphite nanofibers in a thermal interface material used in 3D chip stacks |
US20130153645A1 (en) * | 2011-11-17 | 2013-06-20 | Princeton Lightwave, Inc. | Process for Hybrid Integration of Focal Plane Arrays |
US20130199831A1 (en) * | 2012-02-06 | 2013-08-08 | Christopher Morris | Electromagnetic field assisted self-assembly with formation of electrical contacts |
US20130228916A1 (en) * | 2012-03-02 | 2013-09-05 | Texas Instruments Incorporated | Two-solder method for self-aligning solder bumps in semiconductor assembly |
US9012265B2 (en) * | 2012-03-26 | 2015-04-21 | Ge Yi | Magnet assisted alignment method for wafer bonding and wafer level chip scale packaging |
KR20130118175A (en) * | 2012-04-19 | 2013-10-29 | 삼성전자주식회사 | Semiconductor package and method for fabricating the same |
JP6219929B2 (en) * | 2012-04-20 | 2017-10-25 | レンセレイアー ポリテクニック インスティテュート | Light emitting diode and packaging method thereof |
JP2015529382A (en) * | 2012-09-03 | 2015-10-05 | アイ‐ブレイズ, インコーポレイテッド | Method and system for smart contact arrangement and laminating apparatus |
US9111899B2 (en) * | 2012-09-13 | 2015-08-18 | Lenovo | Horizontally and vertically aligned graphite nanofibers thermal interface material for use in chip stacks |
-
2012
- 2012-02-06 US US13/366,436 patent/US20130199831A1/en not_active Abandoned
-
2014
- 2014-09-26 US US14/497,377 patent/US9137935B2/en not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6404044B2 (en) * | 1997-03-10 | 2002-06-11 | Micron Technology, Inc. | Semiconductor package with stacked substrates and multiple semiconductor dice |
US20050173711A1 (en) * | 2000-12-07 | 2005-08-11 | Patel Satyadev R. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
US6633005B2 (en) * | 2001-10-22 | 2003-10-14 | Micro Mobio Corporation | Multilayer RF amplifier module |
US6858943B1 (en) * | 2003-03-25 | 2005-02-22 | Sandia Corporation | Release resistant electrical interconnections for MEMS devices |
US7737552B2 (en) * | 2004-07-01 | 2010-06-15 | Imec | Device having a bonding structure for two elements |
US20070052045A1 (en) * | 2005-08-31 | 2007-03-08 | Arora William J | Thin membrane alignment method using patterned nanomagnets |
US20080218299A1 (en) * | 2005-11-28 | 2008-09-11 | David Patrick Arnold | Method and Structure for Magnetically-Directed, Self-Assembly of Three-Dimensional Structures |
US8735871B2 (en) * | 2008-04-03 | 2014-05-27 | Cambridge Display Technology Limited | Organic thin film transistors |
US8350639B2 (en) * | 2009-08-26 | 2013-01-08 | Qualcomm Incorporated | Transformer signal coupling for flip-chip integration |
US20110179640A1 (en) * | 2010-01-25 | 2011-07-28 | University Of Florida Research Foundation, Inc. | Enhanced magnetic self-assembly using integrated micromagnets |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9137935B2 (en) * | 2012-02-06 | 2015-09-15 | The United States Of America As Represented By The Secretary Of The Army | Electromagnetic field assisted self-assembly with formation of electrical contacts |
US20150048148A1 (en) * | 2012-02-06 | 2015-02-19 | The United States Of America As Represented By The Secretary Of The Army | Electromagnetic Field Assisted Self-Assembly With Formation Of Electrical Contacts |
US9799632B2 (en) | 2013-12-19 | 2017-10-24 | Imec Vzw | Method for aligning micro-electronic components |
US9601459B2 (en) * | 2013-12-19 | 2017-03-21 | Imec Vzw | Method for aligning micro-electronic components |
US20150179605A1 (en) * | 2013-12-19 | 2015-06-25 | Imec Vzw | Method for Aligning Micro-Electronic Components |
US10769546B1 (en) * | 2015-04-27 | 2020-09-08 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafer and methods for making the same |
US11574230B1 (en) | 2015-04-27 | 2023-02-07 | Rigetti & Co, Llc | Microwave integrated quantum circuits with vias and methods for making the same |
WO2017083010A1 (en) * | 2015-11-14 | 2017-05-18 | Intel Corporation | Magnetic alignment for flip chip microelectronic devices |
US9711443B2 (en) | 2015-11-14 | 2017-07-18 | Intel Corporation | Magnetic alignment for flip chip microelectronic devices |
US10002824B2 (en) | 2015-11-14 | 2018-06-19 | Intel Corporation | Magnetic alignment for flip chip microelectronic devices |
DE102017113094A1 (en) * | 2017-06-14 | 2018-12-20 | Osram Opto Semiconductors Gmbh | Method for self-aligned loading of a connection carrier with a component, device and optoelectronic component |
US11121301B1 (en) | 2017-06-19 | 2021-09-14 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafers and their methods of manufacture |
US11770982B1 (en) | 2017-06-19 | 2023-09-26 | Rigetti & Co, Llc | Microwave integrated quantum circuits with cap wafers and their methods of manufacture |
US20210090925A1 (en) * | 2019-09-19 | 2021-03-25 | Lg Electronics Inc. | Device for self-assembling semiconductor light-emitting diodes |
Also Published As
Publication number | Publication date |
---|---|
US20150048148A1 (en) | 2015-02-19 |
US9137935B2 (en) | 2015-09-15 |
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