JP2012256737A - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法 Download PDF

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Publication number
JP2012256737A
JP2012256737A JP2011129192A JP2011129192A JP2012256737A JP 2012256737 A JP2012256737 A JP 2012256737A JP 2011129192 A JP2011129192 A JP 2011129192A JP 2011129192 A JP2011129192 A JP 2011129192A JP 2012256737 A JP2012256737 A JP 2012256737A
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Japan
Prior art keywords
semiconductor device
alignment mark
alignment
semiconductor
semiconductor element
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Ceased
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JP2011129192A
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English (en)
Japanese (ja)
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JP2012256737A5 (enExample
Inventor
Satoru Wakiyama
悟 脇山
Masaki Minami
正樹 南
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011129192A priority Critical patent/JP2012256737A/ja
Priority to TW101118058A priority patent/TWI497678B/zh
Priority to KR1020120058005A priority patent/KR20120137238A/ko
Priority to CN201210177169.5A priority patent/CN102820284B/zh
Priority to US13/487,163 priority patent/US9548290B2/en
Publication of JP2012256737A publication Critical patent/JP2012256737A/ja
Publication of JP2012256737A5 publication Critical patent/JP2012256737A5/ja
Priority to KR1020190054795A priority patent/KR102071823B1/ko
Ceased legal-status Critical Current

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    • H10W90/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H10P72/0614—
    • H10P72/50—
    • H10P95/90—
    • H10W20/01—
    • H10W20/40—
    • H10W46/00—
    • H10W74/00—
    • H10W74/016—
    • H10W46/101—
    • H10W46/301—
    • H10W46/601—
    • H10W72/01235—
    • H10W72/01255—
    • H10W72/01257—
    • H10W72/01271—
    • H10W72/01333—
    • H10W72/01336—
    • H10W72/019—
    • H10W72/072—
    • H10W72/07223—
    • H10W72/07227—
    • H10W72/07234—
    • H10W72/07236—
    • H10W72/073—
    • H10W72/07338—
    • H10W72/20—
    • H10W72/222—
    • H10W72/241—
    • H10W72/242—
    • H10W72/248—
    • H10W72/252—
    • H10W72/285—
    • H10W72/29—
    • H10W72/90—
    • H10W72/941—
    • H10W72/9415—
    • H10W72/952—
    • H10W74/15—
    • H10W80/312—
    • H10W80/327—
    • H10W80/701—
    • H10W90/26—
    • H10W90/722—
    • H10W90/792—

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2011129192A 2011-06-09 2011-06-09 半導体装置及び半導体装置の製造方法 Ceased JP2012256737A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011129192A JP2012256737A (ja) 2011-06-09 2011-06-09 半導体装置及び半導体装置の製造方法
TW101118058A TWI497678B (zh) 2011-06-09 2012-05-21 半導體裝置及其製造方法
KR1020120058005A KR20120137238A (ko) 2011-06-09 2012-05-31 반도체 장치 및 반도체 장치의 제조 방법
CN201210177169.5A CN102820284B (zh) 2011-06-09 2012-05-31 半导体器件和半导体器件的制造方法
US13/487,163 US9548290B2 (en) 2011-06-09 2012-06-02 Semiconductor device having magnetic alignment marks and underfill resin layers
KR1020190054795A KR102071823B1 (ko) 2011-06-09 2019-05-10 반도체 장치 및 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011129192A JP2012256737A (ja) 2011-06-09 2011-06-09 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2012256737A true JP2012256737A (ja) 2012-12-27
JP2012256737A5 JP2012256737A5 (enExample) 2014-07-24

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JP2011129192A Ceased JP2012256737A (ja) 2011-06-09 2011-06-09 半導体装置及び半導体装置の製造方法

Country Status (5)

Country Link
US (1) US9548290B2 (enExample)
JP (1) JP2012256737A (enExample)
KR (2) KR20120137238A (enExample)
CN (1) CN102820284B (enExample)
TW (1) TWI497678B (enExample)

Cited By (2)

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KR20220106013A (ko) * 2021-01-21 2022-07-28 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 재분배층과의 하이브리드 마이크로 범프의 통합
WO2024247248A1 (ja) * 2023-06-02 2024-12-05 東北マイクロテック株式会社 微小素子、整列システム及び実装方法

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US9343419B2 (en) * 2012-12-14 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structures for semiconductor package
CN103872000A (zh) * 2012-12-14 2014-06-18 台湾积体电路制造股份有限公司 用于半导体封装件的凸块结构
US9773724B2 (en) * 2013-01-29 2017-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and semiconductor device packages
CN105143987B (zh) 2013-03-12 2017-10-20 麦克罗尼克迈达塔有限责任公司 机械制造的对准基准方法和对准系统
WO2014140047A2 (en) 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
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JP6234074B2 (ja) * 2013-06-07 2017-11-22 オリンパス株式会社 半導体装置、固体撮像装置、および撮像装置
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KR102160786B1 (ko) * 2013-10-29 2020-09-28 삼성전자주식회사 반도체 패키지
US9263405B2 (en) * 2013-12-05 2016-02-16 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device
EP2889900B1 (en) 2013-12-19 2019-11-06 IMEC vzw Method for aligning micro-electronic components using an alignment liquid and electrostatic alignment as well as corresponding assembly of aligned micro-electronic components
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JP6470320B2 (ja) * 2015-02-04 2019-02-13 オリンパス株式会社 半導体装置
US10446522B2 (en) * 2015-04-16 2019-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming multiple conductive features in semiconductor devices in a same formation process
US10068181B1 (en) * 2015-04-27 2018-09-04 Rigetti & Co, Inc. Microwave integrated quantum circuits with cap wafer and methods for making the same
CN104778904B (zh) * 2015-05-08 2017-11-24 合肥京东方光电科技有限公司 一种显示面板母板及其制备方法
KR20160142943A (ko) * 2015-06-03 2016-12-14 한국전자통신연구원 반도체 패키지 및 반도체 패키지의 제조 방법
US9633882B2 (en) * 2015-09-29 2017-04-25 Globalfoundries Singapore Pte. Ltd. Integrated circuits with alignment marks and methods of producing the same
US10636757B2 (en) * 2017-08-29 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit component package and method of fabricating the same
US11417569B2 (en) * 2017-09-18 2022-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure having integrated circuit component with conductive terminals of different dimensions
US10217718B1 (en) * 2017-10-13 2019-02-26 Denselight Semiconductors Pte. Ltd. Method for wafer-level semiconductor die attachment
US10276539B1 (en) * 2017-10-30 2019-04-30 Micron Technology, Inc. Method for 3D ink jet TCB interconnect control
DE102018103431A1 (de) * 2018-02-15 2019-08-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Verbindung zwischen Bauteilen und Bauelement aus Bauteilen
US11251096B2 (en) 2018-09-05 2022-02-15 Micron Technology, Inc. Wafer registration and overlay measurement systems and related methods
US11009798B2 (en) 2018-09-05 2021-05-18 Micron Technology, Inc. Wafer alignment markers, systems, and related methods
EP3637963B1 (en) * 2018-10-12 2024-02-07 AT&S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier structures connected by cooperating magnet structures
CN111524873B (zh) 2019-02-01 2022-05-13 台达电子企业管理（上海）有限公司 嵌入式封装模块及其封装方法
US11600590B2 (en) * 2019-03-22 2023-03-07 Advanced Semiconductor Engineering, Inc. Semiconductor device and semiconductor package
FR3105877A1 (fr) * 2019-12-30 2021-07-02 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de connexion autoalignée d’une structure à un support, dispositif obtenu à partir d’un tel procédé, et les structure et support mis en œuvre par un tel procédé
JP2021129084A (ja) * 2020-02-17 2021-09-02 キオクシア株式会社 半導体装置およびその製造方法
JP2021150626A (ja) * 2020-03-24 2021-09-27 キオクシア株式会社 メモリデバイス及びメモリデバイスの製造方法
DE112021001878T5 (de) * 2020-03-26 2023-01-12 Rohm Co., Ltd. Halbleiterbauteil
US11721637B2 (en) * 2020-05-27 2023-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning a transparent wafer to form an alignment mark in the transparent wafer
KR102877021B1 (ko) * 2020-09-03 2025-10-24 삼성전자주식회사 반도체 패키지
KR102856411B1 (ko) * 2020-09-15 2025-09-05 에스케이하이닉스 주식회사 이미지 센싱 장치
CN113013124B (zh) * 2021-02-24 2025-09-09 日月光半导体制造股份有限公司 半导体封装装置及其制造方法
CN113594119B (zh) * 2021-06-25 2024-05-14 苏州汉天下电子有限公司 半导体封装及其制造方法
US12381158B2 (en) * 2022-03-18 2025-08-05 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer bonding method and bonded device structure
US20230299041A1 (en) * 2022-03-18 2023-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer Bonding Method and Bonded Device Structure

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KR20220106013A (ko) * 2021-01-21 2022-07-28 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 재분배층과의 하이브리드 마이크로 범프의 통합
KR102580566B1 (ko) 2021-01-21 2023-09-19 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 재분배층과의 하이브리드 마이크로 범프의 통합
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Also Published As

Publication number Publication date
US20120313236A1 (en) 2012-12-13
US9548290B2 (en) 2017-01-17
TW201250975A (en) 2012-12-16
TWI497678B (zh) 2015-08-21
KR102071823B1 (ko) 2020-01-30
CN102820284B (zh) 2017-07-14
KR20120137238A (ko) 2012-12-20
KR20190054039A (ko) 2019-05-21
CN102820284A (zh) 2012-12-12

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