TWI482309B - 具有p接觸及n接觸與基板電絕緣的薄膜發光二極體 - Google Patents
具有p接觸及n接觸與基板電絕緣的薄膜發光二極體 Download PDFInfo
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Description
本發明係關於一薄膜發光二極體(Light emitting diode,LED),尤其係關於一具有p接觸和n接觸與基板電絕緣的薄膜LED。
LEDs已經發展多年,並且已經廣泛使用在許多照明應用當中。因為LEDs重量輕、耗電量低並且具有良好的電力-光轉換效率,已經用於取代傳統光源,像是白熾燈與螢光燈光源。不過,業界內仍舊需要改善LEDs的效能特性。
在本發明的一個態樣中,一薄膜LED包含一絕緣基板、一電極於該絕緣基板上,及一磊晶結構於該電極上方。
在本發明的另一態樣中,一薄膜LED包含一基板、一絕緣介電膜層於該基板上方、一電極於該絕緣介電膜層上,及一磊晶結構於該電極上方。
在本發明的又一態樣中,製造一薄膜發光二極體的一方法包含形成一磊晶結構於一成長基板上方。該磊晶結構包含一第一磊晶層、一第二磊晶層,及一主動區域在該第一磊晶層與該第二磊晶層之間。該方法進一步包含形成一電極層於該磊晶結構的該第二磊晶層上方、附加/接合具有一傳導黏合層的一主基板至該電極層、移除該成長基板,及移除部分(或蝕刻)該磊晶結構以形成一台面與該磊晶結構,並且裸露出該第二磊晶層或該電極層之至少其中一者。
應可了解此領域技術人士由以下的實施方式顯然可得知薄膜LED的其他態樣,其中僅顯示與描述共平面薄膜LED的示例性組態。應可理解,本發明包含共平面薄膜LED之其他與不同態樣,且其各項細節可在其他各種方面進行修改而不悖離本發明的精神與範疇。據此,該等圖式與實施方式本質上係視為例示性而非限制性。
本發明不同態樣可參照圖解例示本發明理想化結構的圖式於本文中描述。就圖式本身而言,由於例如繪圖技術及/或誤差,來自圖式中形狀的差異可被預期。因此,本揭露文件中所呈現本發明不同態樣不應被理解為限制於本文所例示及描述的特定部件形狀(例如,區域、層、區段、基板等等)而是包含來自例如繪圖形狀的偏差。舉例而言,一部件例示或描述為一矩形可具有圓形或圓弧特徵及/或是在它的邊緣有一斜度而不是從一部件到另一部件不連續地變化。如此,在該等圖式中圖解的該等部件是本質地例示且它們的形狀非欲例示一部件的精準形狀且亦非欲限制本發明之範疇。
其可了解到當例如一區域、層、區段、基板之類的部件提到”on(於另一部件上方)”,其可以直接於該另一部件上方或亦可呈現有介於中間的部件。對照之下,當一部件被提到”directly on(直接於另一部件上方)”,則沒有介於中間的部件。另外其可了解到當一部件被提到”formed(形成)”於另一部件上方,其可成長、沉積、蝕刻、附加、連接、耦合或用別的方法製備或製造於該另一部件或一介於中間的部件上方。
再者,相關聯字詞例如”lower(下)”或”bottom(底)”以及”upper(上)”或”top(頂)”於本文中可用於描述該等圖式中一部件與另一部件的關係。其可了解到相關聯字詞意欲除了該等圖式描繪的方向外還包含一元件的方向。舉例而言,若該等圖式中一元件被翻轉,描述成於其他部件”lower(下)”側上方將被定向成於該等其它部件”upper(上)”側上方。該字詞”lower(下)”,因此包含”lower(下)”與”upper(上)”的方向,其取決於該元件的特定方向。類似地,若該等圖式中一元件被翻轉,描述成”below(於其他部件下方)”或”beneath(於其他部件下方)”將被定向成”above(於該等其它部件上方)”。該字詞”below(於其他部件下方)”或”beneath(於其他部件下方)”,因此包含下方與上方的方向兩者。
除非另外定義,本文中所使用之所有字詞(包含技術性或科學性字詞)具有同本發明所屬技術領域之人士通常理解的相同意義。其進一步理解到這些字詞(例如在一般使用的字典中)意義應被理解與相關技術領域及本揭露文件之內容脈絡的字詞意義相符合。
除非內容脈絡中其他地方清楚指明,否則本文中所使用的單數形式”a(一)”或”an(一)”與”the(該)”意欲同時包括複數形式。其進一步了解到字詞”comprises(包括)”或”comprising(包括)”於本說明書中使用時,具體說明所述的特徵、整數、步驟、運作、部件及/或組件的存在,但不排除一或多個其他特徵、整數、步驟、運作、部件、組件及/或其組合的存在或增加。字詞”及/或”包含一或多個所相關聯列出的字詞的任何與全部組合。
薄膜LED的許多態樣可參考一或多個示範組態來例示。一薄膜LED係以薄材料層沈積在基板上方的LED。薄膜係指一種技術,不受限於每一層的任何特定厚度。此處所使用的「示範」一詞表示「當成例子、實例或例示」,不該解釋為較佳或優於此處所揭示共平面薄膜LED的其他組態。
再者,此處所使用的許多描述詞彙,像是”on(於另一部件上方)”與”透光(transparent)”應該在本發明的上下文中賦予最廣泛含義。例如:聲稱一層於另一層”上方”時,吾人應該瞭解一層可直接或間接沈積、蝕刻、附加或者以其他方式準備或製造於另一層上方或下方。此外,有時描述為「透光」應解讀成,除非提供特定透光率,否則具有不顯著阻礙或吸收相關特定波長(或多個波長)內電磁輻射之性質。
第一圖為一小型垂直薄膜LED 100的截面圖。第二圖為第一圖的小型垂直薄膜LED 100之俯視圖。該垂直LED元件100具有一垂直電流注入型態,包含一圖案化n型接觸/電極(頂接觸) 101、具有一粗糙表面103的一n型氮化鎵(「GaN-based」)層102、一主動區域104、一p型氮化鎵(GaN-based)層105、一寬面反射式p型接觸/電極106、一熱傳導與電傳導基板107機械性支撐該元件結構,以及一金屬底接觸108。該n型氮化鎵層102係形成於一成長基板(未顯示)上方,並且該主動區域104係形成於該n型氮化鎵層102與該p型氮化鎵層105之間。該p型電極106直接或間接形成於該p型氮化鎵層105上方。該n型氮化鎵層102於其上方的該成長基板已經移除,如此可在附加至該成長基板的該n型氮化鎵層102表面上方形成該圖案化n型電極101。
第三圖為該垂直薄膜LED 100安裝在一黏著基台(sub-mount)上方之截面圖。為封裝該等薄膜LEDs,使用一p型焊墊121和一n型焊墊122將該等LEDs安裝到一絕緣陶瓷黏著基台之上。該LED的該底接觸108(p接觸)使用傳導環氧樹脂、焊錫或共晶體123附加至該p型焊墊121。該頂接觸101(n接觸)使用打線(bonding wires)124連接至該n型焊墊122。
由於該n型氮化鎵層102與該p型氮化鎵層105彼此相對,它們一起形成相對於該主動區域104的載子注入器。因此在該LED元件100的該底接觸108與該頂接觸101之間提供電位差時,形成從該底接觸108到該頂接觸101的一垂直電氣路徑。因此,從該p型氮化鎵層105注入到該主動區域104的電洞以及從該n型氮化鎵層102注入到該主動區域104的電子在該主動區域104內重新復合,藉此釋放光形式的能量。
低成本(陶瓷AlN或SiC的導熱能力大於120 W/mK,但是比較貴)絕緣陶瓷黏著基台120的導熱能力通常相當低(低於40 W/mK),高功率LED內產生的熱量無法通過該陶瓷黏著基台有效逸散,如此限制了封裝LEDs的最大驅動力。在另一方面,金屬黏著基台(例如Al、Cu)的導熱能力相對高(Al為238 W/mK、Cu為398 W/mK),很適合用來降低高驅動電流情況下提高的LED接面溫度。薄膜LEDs陣列使用一金屬黏著基台的缺點為該等薄膜LEDs的該等p接觸全都要透過該金屬黏著基台連接。除非一絕緣膜層與圖案化金屬線路已經插入該LED與該金屬黏著基台之間來隔離個別LED,否則陣列內的該等薄膜LEDs無法在該金屬黏著基台上串聯。然而,因為該絕緣膜層具有低熱傳導性並且必須相對厚,該LED與該金屬黏著基台接面處之間的有效熱阻增加,因此損害到使用該金屬黏著基台來封裝LED的目的。
第四圖為一共平面薄膜LED 200的一第一組態之截面圖。該LED元件200包含一圖案化n型接觸/電極201、具有一粗糙表面203的一n型氮化鎵層202、一主動區域204、一p型氮化鎵層205、一反射式p型接觸/電極206、一p接觸207、一傳導黏合層(a conductive adhesive layer) 208、一絕緣基板209,以及一金屬化底表面210。該金屬p型電極206和該傳導黏合層208係足夠厚來擴散該p型氮化鎵層205的電流,在一起的話厚度超過約1微米(um)。該傳導黏合層208可為共晶體金屬(eutectic metal)、焊錫金屬、銀環氧物或其他傳導黏合形式。在一LED陣列內,重要的是可並聯及/或串聯LEDs,來匹配該LED驅動器的電壓及/或電流。如此為避免在該等薄膜LEDs與一金屬黏著基台之間使用一熱阻絕緣膜,該p接觸207和該n接觸201都位於該LED 200的同一側上方(即,它們是共平面),並且與該基板209電絕緣。該基板209為電絕緣或電阻式基板(即為一絕緣體、一介電質及/或一阻止電流的基板),並且可由Al2
O3
、高阻質Si、半絕緣GaAs或InP所形成。在一種組態中,該基板209係對介於大約300毫微米(nm)至700毫微米之間的波長可為透光並且透光率超過大約50%(例如晶體型態的Al2
O3
、SiC和AlN)。對於藍光與黃光的透光率至少60%。在封裝好的LEDs或LEDs陣列內,某些光線不可避免會從矽/空氣界面、反射蓋體、螢光顆粒以及相鄰晶粒反射,並且進入該透光基板209。208/209與210/209之間的界面具有超過60%的反射率,將逸散光線重新導引來逃脫該基板209。在另一組態中,該基板209係對介於大約300毫微米(nm)至700毫微米之間的波長可為反射性並且反射率超過大約50%(例如Al2
O3
的陶瓷/非晶型態)。該金屬化底表面210允許該LED元件200附加至該金屬黏著基台。
第五圖為複數個第一組態之共平面薄膜LED 200串聯安裝在該金屬黏著基台220上方的截面圖。如第五圖中所示,該等LEDs 200可用熱傳導黏著或共晶體焊錫221安裝至該金屬黏著基台220,以最小化該絕緣基板209與該金屬黏著基台220之間的熱阻。該等LEDs 200定位成讓該等LEDs 200的p接觸與n接觸與陣列內其他元件隔離。該n型焊墊223與該p型焊墊224都藉由一絕緣膜層222的插入層安裝至該金屬黏著基台220,以絕緣該n型焊墊223與該p型焊墊224免於電耦合至該金屬黏著基台220。透過與打線225連接,該等LEDs可並聯或串聯。如第五圖所示,該等LEDs 200串聯。
第六圖為根據一第二組態的一共平面薄膜LED 300之截面圖。該LED元件300包含一圖案化n型接觸/電極301、具有一粗糙表面303的一n型氮化鎵層302、一主動區域304、一p型氮化鎵層305、一反射式p型接觸/電極306、一p接觸307、一傳導黏合層308、一絕緣介電膜層309、一基板310以及一金屬化底表面311。該金屬p型電極306和該傳導黏合層308係足夠厚來擴散該p型氮化鎵層305的電流,在一起的話厚度超過約1微米(um)。在一示範組態內,一額外的絕緣介電膜層312放置於該基板310與該金屬化底表面311之間。該基板310可為絕緣體或可具有電傳導性。在一組態中,該基板310係對介於大約300毫微米(nm)至700毫微米之間的波長可為透光並且透光率超過大約50%。對於藍光與黃光的透光率至少60%。在另一組態中,該基板310係對介於大約300毫微米(nm)至700毫微米之間的波長可為反射性並且反射率超過大約50%。該絕緣介電膜層309將該基板310與該p型電極306絕緣。該絕緣介電膜層309可薄至0.1微米(um),並且對於該LED元件300的熱阻無衝擊。在一示範組態中,該p型電極306的邊緣從該晶片邊緣往下凹陷,避免在晶粒切割處理期間,金屬毛邊讓該p接觸307與該基板310短路。
第七圖至第十四圖為顯示第一組態的該共平面薄膜LED製程之截面圖。如第七圖所示,包含一n型氮化鎵層202、一主動區域204和一p型氮化鎵層205的一磊晶結構成長/形成於該藍寶石(Al2
O3
)或碳化矽(SiC)基板250上。如第八圖所示,具有一覆蓋層(例如Au)的反射式p型接觸/電極206形成於該p型氮化鎵層205上方,以覆蓋該p型氮化鎵層205的一完整表面。接著如第九圖中所示,在一晶圓接合製程中,透過施加壓力將具有一傳導黏合層208的一絕緣基板209接合至該反射式p型電極206。該傳導黏合層208可為共晶體金屬、焊錫金屬、銀環氧物或其他傳導黏著形式。施加壓力讓兩晶圓表面206、208緊密接觸。可加熱熔化該傳導黏合層208,將兩晶圓260、270接在一起。
如第十圖所示,該成長基板250已經被移除。若該成長基板250為一藍寶石基板,則可利用施加其中光子能量大於氮化鎵(GaN)帶隙能量的UV雷射之雷射剝離技術(Laser lift-off,LLO)去除該成長基板250。在一示範組態中,在該LLO製程中使用波長大約248毫微米(nm)的UV雷射。若該成長基板250為一SiC基板,則可透過機械薄化與化學蝕刻來去除該成長基板250。如第十一圖所示,利用蝕刻該磊晶結構(即是n型氮化鎵層202、主動區域204和p型氮化鎵層205)裸露出該反射式p型電極206,來形成一台面(mesa)280。如第十二圖所示,使用濕化學效果讓該n型氮化鎵層202的表面變粗糙,建立微結構203來增強光萃取。在一示範組態中,該等微結構203的大小介於大約200毫微米(nm)與400毫微米之間。在另一示範組態中,該等微結構203的大小介於大約100毫微米(nm)與500毫微米之間。如第十三圖所示,該n接觸201形成於該n型氮化鎵層202上方,並且該p接觸207形成於該反射式p型電極206上方。若在蝕刻該磊晶結構之後未完全裸露出該p型電極206並且仍舊存在一薄的該p型氮化鎵層205,則該p接觸207可形成於裸露出的該p型氮化鎵層205上方。該n接觸201和p接觸207都為金屬,並且可為Cr、Ti、Al、Pt、Au等。接著該基板209薄化至所要的厚度,並且如第十四圖所示,該金屬化底表面210沈積在該基板209的一底表面上。
第十五圖至第二十三圖為顯示第二組態的該共平面薄膜LED製程之截面圖。如第十五圖所示,包含一n型氮化鎵層302、一主動區域304和一p型氮化鎵層305的一磊晶結構成長/形成於該藍寶石或碳化矽(SiC)基板350上。如第十六圖所示,具有一覆蓋層(例如Au)的一反射式p型接觸/電極306形成於該p型氮化鎵層305上方,以覆蓋該p型氮化鎵層305的一完整表面。接著如第十七圖中所示,在一晶圓接合製程中,透過施加壓力將具有一絕緣介電膜層309和一黏合層308的一絕緣或導電基板310接合至該反射式p型電極306。該黏合層308可為共晶體金屬、焊錫金屬等。施加壓力讓兩晶圓表面306、308緊密接觸。可加熱熔化該黏合層308,將兩晶圓360、370接合在一起。
如第十八圖所示,該成長基板350已經被移除。若該成長基板350為一藍寶石基板,則可利用施加其中光子能量大於氮化鎵(GaN)帶隙能量的UV雷射之雷射剝離技術(Laser lift-off,LLO)去除該成長基板350。在一示範組態內,在該LLO製程中使用波長大約248毫微米(nm)的UV雷射。若該成長基板350為一SiC基板,則可透過機械薄化與化學蝕刻來去除該成長基板350。如第十九圖所示,利用蝕刻該磊晶結構(即為該n型氮化鎵層302、該主動區域304和該p型氮化鎵層305)裸露出該反射式p型電極306,來形成一台面380。此外,在該反射式p型電極306與該傳導黏合層308內形成凹陷390,讓該電流擴散層(306+308)從該晶片邊緣往下凹陷,避免在晶粒切割處理期間,金屬毛邊讓該LED的p接觸307與該基板310短路。如第二十圖所示,使用濕化學效果讓該n型氮化鎵層302的表面變粗糙,建立微結構303來增強光萃取。在一示範組態中,該等微結構303的大小介於大約200毫微米(nm)與400毫微米之間。在其他示範組態中,該等微結構303的大小介於大約100毫微米與500毫微米之間。如第二十一圖所示,該n接觸301形成於該n型氮化鎵層302上方,並且該p接觸307形成於該反射式p型電極306上方。若在蝕刻該磊晶結構之後未完全裸露出該p型電極306並且仍舊存在一薄的該p型氮化鎵層305,則該p接觸307可形成於裸露出的該p型氮化鎵層305上方。該n接觸301和該p接觸307都為金屬,並且可為Cr、Ti、Al、Pt、Au等。接著該基板310薄化至所要的厚度,並且如第二十二圖所示,該金屬化底表面311沈積在該基板310的底表面上。如第二十三圖所示,在該基板310的該底表面上形成一額外的絕緣介電膜層312,並且該金屬化底表面311可沈積在該絕緣介電膜層312上方。
第二十四圖為顯示第一和第二組態的小型共平面薄膜LED第一範例之俯視圖。如第二十四圖所示,該n接觸201、301為圓形並且形成於該台面280、380上方。該p接觸207、307形成於該晶粒的一角落上,與該晶粒400的邊緣相鄰。如第二十五圖所展示,該n接觸201、301的形狀並不受限於例示的電極圖案,並且可有超過一個p接觸。第二十五圖為顯示第一和第二組態的該共平面薄膜LED第二範例之俯視圖。如第二十五圖所示,該n接觸201、301係由該台面280、380上四個金手指及一橫桿所形成。該p接觸207、307形成於該晶粒的角落上,與該晶粒400的該邊緣相鄰。
在此已經提供本發明的許多態樣,讓一般技術者可實踐本發明。熟習此項技術者可容易瞭解對於本發明中共平面薄膜LED所呈現的許多態樣之修改,並且此處揭示的概念可延伸至其他應用。因此,申請專利範圍並不受限於本發明中共平面薄膜LED所呈現的許多態樣,而係賦予符合申請專利範圍所述之全部範疇。與本發明所描述並且業界內已知或稍後一般技術者會知道的許多態樣元件相同之所有結構與功能都在此併入當成參考,並且涵蓋在申請專利範圍之內。再者,不管申請專利範圍內是否明確陳述本發明之揭示,此處所揭示內容都不欲奉獻於公眾。除非使用「元件用於(means for)」語法明確陳述,或在方法申請專利範圍的情況下,使用「步驟用於(step for)」一詞陳述,否則不得依35 U.S.C.§12條第六章條款來解釋申請專利範圍之要素。
100...LED元件
101...n型接觸
102...n型氮化鎵層
103...粗糙表面
104...主動區域
105...p型氮化鎵層
106...寬面反射式p型接觸/電極
107...基板
108...底接觸
120...絕緣陶瓷黏著基台
121...p型焊墊
122...n型焊墊
123...共晶體
124...接合線
200...LED元件
201...n型接觸
202...n型氮化鎵層
203...粗糙表面
203...微結構
204...主動區域
205...p型氮化鎵層
206...反射式p型接觸
207...p接觸
208...傳導黏合層
209...絕緣基板
210...底表面
220...黏著基台
221...共晶體焊錫
222...絕緣膜層
223...n型焊墊
224...p型焊墊
225...打線
250...成長基板
260...晶圓
270...晶圓
280...台面
300...LED元件
301...n型接觸
302...n型氮化鎵層
303...粗糙表面
304...主動區域
305...p型氮化鎵層
306...反射式p型接觸
307...p接觸
308...傳導黏合層
309...絕緣介電膜層
310...基板
311...底表面
312...絕緣介電膜層
350...成長基板
360...晶圓
370...晶圓
380...台面
390...凹陷
400...晶粒
第一圖為一垂直薄膜LED的截面圖。
第二圖為第一圖的垂直薄膜LED之俯視圖。
第三圖為第一圖的垂直薄膜LED安裝在一黏著基台上之截面圖。
第四圖為根據第一組態的一共平面薄膜LED之截面圖。
第五圖為複數個第一組態的該共平面薄膜LED串聯安裝在一金屬黏著基台上的截面圖。
第六圖為根據第二組態的一共平面薄膜LED之截面圖。
第七圖為顯示第一組態的該共平面薄膜LED製程之第一截面圖。
第八圖為顯示第一組態的該共平面薄膜LED製程之第二截面圖。
第九圖為顯示第一組態的該共平面薄膜LED製程之第三截面圖。
第十圖為顯示第一組態的該共平面薄膜LED製程之第四截面圖。
第十一圖為顯示第一組態的該共平面薄膜LED製程之第五截面圖。
第十二圖為顯示第一組態的該共平面薄膜LED製程之第六截面圖。
第十三圖為顯示第一組態的該共平面薄膜LED製程之第七截面圖。
第十四圖為顯示第一組態的該共平面薄膜LED製程之第八截面圖。
第十五圖為顯示第二組態的該共平面薄膜LED製程之第一截面圖。
第十六圖為顯示第二組態的該共平面薄膜LED製程之第二截面圖。
第十七圖為顯示第二組態的該共平面薄膜LED製程之第三截面圖。
第十八圖為顯示第二組態的該共平面薄膜LED製程之第四截面圖。
第十九圖為顯示第二組態的該共平面薄膜LED製程之第五截面圖。
第二十圖為顯示第二組態的該共平面薄膜LED製程之第六截面圖。
第二十一圖為顯示第二組態的該共平面薄膜LED製程之第七截面圖。
第二十二圖為顯示第二組態的該共平面薄膜LED製程之第八截面圖。
第二十三圖為顯示第二組態的該共平面薄膜LED製程之第九截面圖。
第二十四圖為顯示第一和第二組態的該共平面薄膜LED第一範例之俯視圖。
第二十五圖為顯示第一和第二組態的該共平面薄膜LED第二範例之俯視圖。
200...LED元件
201...n型接觸
202...n型氮化鎵層
203...粗糙表面
203...微結構
204...主動區域
205...p型氮化鎵層
206...反射式p型接觸
207...p接觸
208...傳導黏合層
209...絕緣基板
210...底表面
Claims (29)
- 一種薄膜發光二極體,其包括:一基板;一傳導黏合層,其係形成於該基板上;一反射式電極,其係形成於該傳導黏合層上,該傳導黏合層與該反射式電極係為金屬且一起形成一金屬電流擴散層;一焊墊接觸,其係用於一接合線而形成於該金屬電流擴散層上;及一磊晶結構,其係於該反射式電極上,且包含:第一磊晶層、第二磊晶層、及該第一磊晶層與該第二磊晶層之間的一主動區域;其中該磊晶結構之部分被移除,藉而曝露該金屬電流擴散層之一表面、與該第一磊晶層、該主動區域及該第二磊晶層之一側壁,以對該磊晶結構與該金屬電流擴散層形成一台面。
- 如申請專利範圍第1項之薄膜發光二極體,其中該金屬電流擴散層具有大於約1微米(um)之一厚度。
- 如申請專利範圍第1項之薄膜發光二極體,其中該基板係對於介於大約300毫微米(nm)與700毫微米之間的波長為透光並且透光率超過大約50%。
- 如申請專利範圍第1項之薄膜發光二極體,其中該基板係對於介於大約300毫微米(nm)與700毫微米之間的波長為反射性並且反射率超過大約50%。
- 如申請專利範圍第1項之薄膜發光二極體,其中該第一磊晶層具有有微結構的一粗糙表面,該等微結構的大小介於大約100毫微米(nm)與500毫微米之間。
- 如申請專利範圍第1項之薄膜發光二極體,其中該第一磊晶層為一n型氮化鎵(GaN-based)層、且該第二磊晶層為一p型氮化鎵(GaN-based)層。
- 如申請專利範圍第1項之薄膜發光二極體,進一步包括於該第一磊晶層上之一圖案化第二電極。
- 如申請專利範圍第7項之薄膜發光二極體,其中該圖案化第二電極係於該台面的一頂表面上。
- 如申請專利範圍第1項之薄膜發光二極體,其中該基板並非用於該磊晶結構的一原始成長基板。
- 如申請專利範圍第1項之薄膜發光二極體,其中該焊墊接觸係直接地連接於該該金屬電流擴散層。
- 如申請專利範圍第1項之薄膜發光二極體,其中該基板為一傳導基板,且進而包含一絕緣介電膜層,其係形成於該基板與該傳導黏合層之間。
- 如申請專利範圍第11項之薄膜發光二極體,其中該金屬電流擴散層之一部分係自該金屬電流擴散層之該曝露之表面被移除,藉而曝露該絕緣介電膜層之一表面;且該薄膜發光二極體係於該絕緣介電膜層之該曝露之表面被切割(singulated)。
- 如申請專利範圍第1項之薄膜發光二極體,進一步於該基板之底表面,包括一金屬層。
- 如申請專利範圍第1項之薄膜發光二極體,進一步於該基板之底表面,包括一絕緣介電膜層;及於該絕緣介電膜層,包括一金屬層。
- 一種製造一薄膜發光二極體之方法,其包括:形成一磊晶結構於一成長基板上,該磊晶結構包括一第一磊晶層、一第二磊晶層,及一主動區域在該第一磊晶層與該第二磊晶層之間;形成一反射式電極層於該磊晶結構的該第二磊晶層上;將具有一傳導黏合層的一基板附加至該反射式電極層,使得該該反射式電極層與該傳導黏合層一起形成一金屬電流擴散層;移除該成長基板;移除該成長基板後,移除部分該磊晶結構,藉而曝露該金屬電流擴散層之一表面、與該第一磊晶層、該主動區域及該第二磊晶層之一側壁,以對該磊晶結構與該金屬電流擴散層形成一台面;及於該金屬電流擴散層之該曝露之表面上,形成用於一接合線之一焊墊接觸。
- 如申請專利範圍第15項之方法,其中該基板為一絕緣基板。
- 如申請專利範圍第15項之方法,其中該基板為一傳導基板,並且一絕緣介電膜層係形成於該基板與該傳導黏合層之間。
- 如申請專利範圍第15項之方法,進一步包括將該第一磊晶層的一表面變粗糙以形成微結構於該表面上,該等微結構的大小介於大約100毫微米(nm)與500毫微米之間。
- 如申請專利範圍第15項之方法,進一步包括:形成一圖案化第二電極於該第一磊晶層的該表面;及形成一金屬接觸於該金屬電流擴散層上。
- 如申請專利範圍第19項之方法,其中該磊晶結構被蝕刻以裸露出該反射式電極層,並且於該反射式電極層上形成該金屬接觸。
- 如申請專利範圍第15項之方法,其中該焊墊接觸係直接地形成於該金屬電流擴散層之上述曝露之表面。
- 如申請專利範圍第15項之方法,其中該金屬電流擴散層具有大於約1微米(um)之一厚度。
- 如申請專利範圍第17項之方法,進一步包括:自該金屬電流擴散層之該曝露之表面,移除部分該金屬電流擴散層,藉而曝露該絕緣介電膜層之一表面;及自該絕緣介電膜層之該曝露之表面,切割(singulate)出該薄膜發光二極體。
- 如申請專利範圍第15項之方法,進一步包括:於該基板之底表面,形成一金屬層。
- 如申請專利範圍第15項之方法,進一步包括:於該基板之底表面,形成一絕緣介電膜層;及於該絕緣介電膜層,形成一金屬層。
- 如申請專利範圍第19項之方法,進一步包括:於該台面的一頂表面上,形成該圖案化第二電極。
- 如申請專利範圍第15項之方法,其中該基板係對於介於大約300毫微米(nm)與700毫微米之間的波長為透光並且透光率超過大約50%。
- 如申請專利範圍第15項之方法,其中該基板係對於介於大約300毫微米(nm)與700毫微米之間的波長為反射性並且反射率超過大約50%。
- 如申請專利範圍第15項之方法,其中該第一磊晶層為一n型氮化鎵層、且該第二磊晶層為一p型氮化鎵層。
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Also Published As
Publication number | Publication date |
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EP2519961B1 (en) | 2018-08-15 |
CN102460639B (zh) | 2015-03-11 |
CN104810435A (zh) | 2015-07-29 |
TW201108457A (en) | 2011-03-01 |
US20100314649A1 (en) | 2010-12-16 |
US8871539B2 (en) | 2014-10-28 |
EP2519961A4 (en) | 2015-11-18 |
KR101313973B1 (ko) | 2013-10-01 |
JP6092798B2 (ja) | 2017-03-08 |
US20100314643A1 (en) | 2010-12-16 |
JP2014099668A (ja) | 2014-05-29 |
US20100314651A1 (en) | 2010-12-16 |
US8546832B2 (en) | 2013-10-01 |
US20120267665A1 (en) | 2012-10-25 |
US9142742B2 (en) | 2015-09-22 |
US8207547B2 (en) | 2012-06-26 |
WO2010144270A1 (en) | 2010-12-16 |
KR20120016314A (ko) | 2012-02-23 |
TW201526280A (zh) | 2015-07-01 |
EP2519961A1 (en) | 2012-11-07 |
US8536601B2 (en) | 2013-09-17 |
US20130252357A1 (en) | 2013-09-26 |
CN102460639A (zh) | 2012-05-16 |
US20130328093A1 (en) | 2013-12-12 |
JP2012529772A (ja) | 2012-11-22 |
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