TWI474093B - 顯示裝置及顯示裝置的製造方法 - Google Patents
顯示裝置及顯示裝置的製造方法 Download PDFInfo
- Publication number
- TWI474093B TWI474093B TW101130310A TW101130310A TWI474093B TW I474093 B TWI474093 B TW I474093B TW 101130310 A TW101130310 A TW 101130310A TW 101130310 A TW101130310 A TW 101130310A TW I474093 B TWI474093 B TW I474093B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide semiconductor
- region
- semiconductor film
- electrode
- gate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000010408 film Substances 0.000 description 101
- 239000004065 semiconductor Substances 0.000 description 74
- 239000010410 layer Substances 0.000 description 43
- 239000010409 thin film Substances 0.000 description 33
- 230000001681 protective effect Effects 0.000 description 32
- 239000000758 substrate Substances 0.000 description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 9
- 229910001936 tantalum oxide Inorganic materials 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910017767 Cu—Al Inorganic materials 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011190006A JP2013055080A (ja) | 2011-08-31 | 2011-08-31 | 表示装置および表示装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201312241A TW201312241A (zh) | 2013-03-16 |
| TWI474093B true TWI474093B (zh) | 2015-02-21 |
Family
ID=47742342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101130310A TWI474093B (zh) | 2011-08-31 | 2012-08-21 | 顯示裝置及顯示裝置的製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8803150B2 (enExample) |
| JP (1) | JP2013055080A (enExample) |
| KR (1) | KR101364361B1 (enExample) |
| CN (1) | CN102969338B (enExample) |
| TW (1) | TWI474093B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8716708B2 (en) | 2011-09-29 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR102207063B1 (ko) * | 2012-12-12 | 2021-01-25 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터 제조 방법 및 박막 트랜지스터를 포함하는 표시 장치 |
| US9231111B2 (en) * | 2013-02-13 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102148957B1 (ko) | 2013-09-02 | 2020-08-31 | 삼성디스플레이 주식회사 | 표시 기판 및 표시 기판의 제조 방법 |
| KR102172972B1 (ko) | 2014-02-26 | 2020-11-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그의 제조방법 |
| KR102427675B1 (ko) * | 2015-04-20 | 2022-08-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 및 이를 포함하는 유기 발광 표시 장치 |
| WO2017029576A1 (en) * | 2015-08-19 | 2017-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| CN107039284A (zh) * | 2017-04-17 | 2017-08-11 | 武汉华星光电技术有限公司 | 一种制作低温多晶硅薄膜晶体管的方法 |
| WO2019012631A1 (ja) * | 2017-07-12 | 2019-01-17 | 堺ディスプレイプロダクト株式会社 | 半導体装置およびその製造方法 |
| JP2020004861A (ja) * | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
| CN113594185A (zh) * | 2021-07-29 | 2021-11-02 | 北海惠科光电技术有限公司 | 阵列基板的制作方法及阵列基板 |
| CN116504815B (zh) * | 2023-06-27 | 2024-02-06 | 南京邮电大学 | 一种高功率a-IGZO薄膜晶体管及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855954B1 (en) * | 1999-10-18 | 2005-02-15 | Fujitsu Display Technologies Corporation | Thin film transistor, fabrication method thereof and liquid crystal display having the thin film transistor |
| US20090101895A1 (en) * | 2007-10-19 | 2009-04-23 | Hitachi Displays, Ltd. | Display device |
| TW201001507A (en) * | 2004-01-16 | 2010-01-01 | Semiconductor Energy Lab | Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01307269A (ja) * | 1988-06-03 | 1989-12-12 | Sharp Corp | 半導体装置 |
| JP4514862B2 (ja) * | 1999-11-30 | 2010-07-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI256515B (en) * | 2004-04-06 | 2006-06-11 | Quanta Display Inc | Structure of LTPS-TFT and fabricating method thereof |
| US20100295042A1 (en) * | 2008-01-23 | 2010-11-25 | Idemitsu Kosan Co., Ltd. | Field-effect transistor, method for manufacturing field-effect transistor, display device using field-effect transistor, and semiconductor device |
| JP5704790B2 (ja) | 2008-05-07 | 2015-04-22 | キヤノン株式会社 | 薄膜トランジスタ、および、表示装置 |
| JP5442228B2 (ja) * | 2008-08-07 | 2014-03-12 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置の製造方法 |
| JP5781720B2 (ja) * | 2008-12-15 | 2015-09-24 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP5617174B2 (ja) * | 2009-02-27 | 2014-11-05 | 大日本印刷株式会社 | トランジスタ素子の製造方法 |
| JP2010219214A (ja) * | 2009-03-16 | 2010-09-30 | Idemitsu Kosan Co Ltd | 半導体薄膜の製造方法、及び該半導体薄膜を備える薄膜トランジスタ |
| JP5663214B2 (ja) * | 2009-07-03 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN102484137B (zh) | 2009-08-26 | 2015-06-17 | 株式会社爱发科 | 半导体装置、具有半导体装置的液晶显示装置、半导体装置的制造方法 |
| JPWO2011040028A1 (ja) * | 2009-09-30 | 2013-02-21 | 出光興産株式会社 | Ｉｎ−Ｇａ−Ｚｎ−Ｏ系酸化物焼結体 |
| KR101658533B1 (ko) * | 2009-11-25 | 2016-09-22 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터 및 그 제조방법 |
| US20120242624A1 (en) * | 2009-11-27 | 2012-09-27 | Sharp Kabushiki Kaisha | Thin film transistor and method for fabricating the same, semiconductor device and method for fabricating the same, as well as display |
| KR101711870B1 (ko) * | 2009-12-23 | 2017-03-06 | 삼성디스플레이 주식회사 | 박막트랜지스터, 그 제조방법 및 박막트랜지스터를 이용한 표시기판 |
| KR20110093113A (ko) | 2010-02-11 | 2011-08-18 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
-
2011
- 2011-08-31 JP JP2011190006A patent/JP2013055080A/ja active Pending
-
2012
- 2012-08-21 TW TW101130310A patent/TWI474093B/zh active
- 2012-08-28 US US13/596,089 patent/US8803150B2/en active Active
- 2012-08-30 CN CN201210322625.0A patent/CN102969338B/zh active Active
- 2012-08-30 KR KR1020120095478A patent/KR101364361B1/ko active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855954B1 (en) * | 1999-10-18 | 2005-02-15 | Fujitsu Display Technologies Corporation | Thin film transistor, fabrication method thereof and liquid crystal display having the thin film transistor |
| TW201001507A (en) * | 2004-01-16 | 2010-01-01 | Semiconductor Energy Lab | Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television |
| US20090101895A1 (en) * | 2007-10-19 | 2009-04-23 | Hitachi Displays, Ltd. | Display device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101364361B1 (ko) | 2014-02-18 |
| CN102969338A (zh) | 2013-03-13 |
| CN102969338B (zh) | 2015-09-30 |
| JP2013055080A (ja) | 2013-03-21 |
| US8803150B2 (en) | 2014-08-12 |
| TW201312241A (zh) | 2013-03-16 |
| KR20130024851A (ko) | 2013-03-08 |
| US20130048996A1 (en) | 2013-02-28 |
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