KR101364361B1 - 표시 장치 및 표시 장치의 제조 방법 - Google Patents

표시 장치 및 표시 장치의 제조 방법 Download PDF

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KR101364361B1
KR101364361B1 KR1020120095478A KR20120095478A KR101364361B1 KR 101364361 B1 KR101364361 B1 KR 101364361B1 KR 1020120095478 A KR1020120095478 A KR 1020120095478A KR 20120095478 A KR20120095478 A KR 20120095478A KR 101364361 B1 KR101364361 B1 KR 101364361B1
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oxide semiconductor
region
semiconductor film
contact
gate electrode
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KR20130024851A (ko
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다께시 노다
데쯔후미 가와무라
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가부시키가이샤 재팬 디스프레이
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
KR1020120095478A 2011-08-31 2012-08-30 표시 장치 및 표시 장치의 제조 방법 Active KR101364361B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011190006A JP2013055080A (ja) 2011-08-31 2011-08-31 表示装置および表示装置の製造方法
JPJP-P-2011-190006 2011-08-31

Publications (2)

Publication Number Publication Date
KR20130024851A KR20130024851A (ko) 2013-03-08
KR101364361B1 true KR101364361B1 (ko) 2014-02-18

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KR1020120095478A Active KR101364361B1 (ko) 2011-08-31 2012-08-30 표시 장치 및 표시 장치의 제조 방법

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Country Link
US (1) US8803150B2 (enExample)
JP (1) JP2013055080A (enExample)
KR (1) KR101364361B1 (enExample)
CN (1) CN102969338B (enExample)
TW (1) TWI474093B (enExample)

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TWI605590B (zh) 2011-09-29 2017-11-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102207063B1 (ko) * 2012-12-12 2021-01-25 엘지디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터 제조 방법 및 박막 트랜지스터를 포함하는 표시 장치
US9231111B2 (en) * 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102148957B1 (ko) 2013-09-02 2020-08-31 삼성디스플레이 주식회사 표시 기판 및 표시 기판의 제조 방법
KR102172972B1 (ko) 2014-02-26 2020-11-03 삼성디스플레이 주식회사 박막 트랜지스터 및 그의 제조방법
KR102427675B1 (ko) * 2015-04-20 2022-08-02 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 및 이를 포함하는 유기 발광 표시 장치
US9893202B2 (en) * 2015-08-19 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
CN107039284A (zh) * 2017-04-17 2017-08-11 武汉华星光电技术有限公司 一种制作低温多晶硅薄膜晶体管的方法
US11121262B2 (en) * 2017-07-12 2021-09-14 Sakai Display Products Corporation Semiconductor device including thin film transistor and method for manufacturing the same
JP2020004861A (ja) * 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
CN113594185A (zh) * 2021-07-29 2021-11-02 北海惠科光电技术有限公司 阵列基板的制作方法及阵列基板
CN116504815B (zh) * 2023-06-27 2024-02-06 南京邮电大学 一种高功率a-IGZO薄膜晶体管及其制备方法

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WO2011024770A1 (ja) 2009-08-26 2011-03-03 株式会社アルバック 半導体装置、半導体装置を有する液晶表示装置、半導体装置の製造方法
KR20110058076A (ko) * 2009-11-25 2011-06-01 엘지디스플레이 주식회사 산화물 박막 트랜지스터 및 그 제조방법
JP2011166135A (ja) 2010-02-11 2011-08-25 Samsung Electronics Co Ltd 薄膜トランジスタパネルおよびそれの製造方法

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JPH01307269A (ja) * 1988-06-03 1989-12-12 Sharp Corp 半導体装置
JP2001119029A (ja) * 1999-10-18 2001-04-27 Fujitsu Ltd 薄膜トランジスタ及びその製造方法及びそれを備えた液晶表示装置
JP4514862B2 (ja) * 1999-11-30 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8053171B2 (en) * 2004-01-16 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television
TWI256515B (en) * 2004-04-06 2006-06-11 Quanta Display Inc Structure of LTPS-TFT and fabricating method thereof
JP2009099887A (ja) * 2007-10-19 2009-05-07 Hitachi Displays Ltd 表示装置
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
JP5704790B2 (ja) 2008-05-07 2015-04-22 キヤノン株式会社 薄膜トランジスタ、および、表示装置
JP5442228B2 (ja) * 2008-08-07 2014-03-12 株式会社ジャパンディスプレイ 表示装置及び表示装置の製造方法
JP5781720B2 (ja) * 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP5617174B2 (ja) * 2009-02-27 2014-11-05 大日本印刷株式会社 トランジスタ素子の製造方法
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KR20120091026A (ko) * 2009-09-30 2012-08-17 이데미쓰 고산 가부시키가이샤 Ｉｎ-Ｇａ-Ｚｎ-Ｏ계 산화물 소결체
JP5490138B2 (ja) * 2009-11-27 2014-05-14 シャープ株式会社 薄膜トランジスタとその製造方法、半導体装置とその製造方法、並びに表示装置
KR101711870B1 (ko) * 2009-12-23 2017-03-06 삼성디스플레이 주식회사 박막트랜지스터, 그 제조방법 및 박막트랜지스터를 이용한 표시기판

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
WO2011024770A1 (ja) 2009-08-26 2011-03-03 株式会社アルバック 半導体装置、半導体装置を有する液晶表示装置、半導体装置の製造方法
KR20110058076A (ko) * 2009-11-25 2011-06-01 엘지디스플레이 주식회사 산화물 박막 트랜지스터 및 그 제조방법
JP2011166135A (ja) 2010-02-11 2011-08-25 Samsung Electronics Co Ltd 薄膜トランジスタパネルおよびそれの製造方法

Also Published As

Publication number Publication date
US20130048996A1 (en) 2013-02-28
TW201312241A (zh) 2013-03-16
TWI474093B (zh) 2015-02-21
CN102969338B (zh) 2015-09-30
CN102969338A (zh) 2013-03-13
US8803150B2 (en) 2014-08-12
JP2013055080A (ja) 2013-03-21
KR20130024851A (ko) 2013-03-08

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